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Discrete Semiconductors

discrete semiconductor.jpg
Discrete Semiconductor refer to electronic components that are individual and separate from each other, as opposed to integrated circuits that contain multiple components on a single chip. These discrete components include diodes, transistors, thyristors, and other similar devices that perform specific functions in electronic circuits. They are commonly used in power supplies, amplifiers, and other electronic devices where precise control and regulation of electrical signals is required. Discrete Semiconductor Products are available in a variety of sizes, shapes, and specifications to meet the needs of different applications. They are widely used in the electronics industry and are essential components in many electronic devices.
Compare Image Name Manufacturer Pricing(USD) Quantity Weight(Kg) Size(LxWxH) Datasheet Factory Lead Time Mount Packaging Published Pbfree Code Part Status Moisture Sensitivity Level (MSL) Number of Terminations ECCN Code Max Operating Temperature Min Operating Temperature RoHS Status Lead Free Contact Plating Radiation Hardening Number of Pins Package / Case Reach Compliance Code Mounting Type Operating Temperature Technology Operating Mode HTS Code JESD-609 Code Terminal Finish Terminal Position Terminal Form Peak Reflow Temperature (Cel) Time@Peak Reflow Temperature-Max (s) Pin Count Surface Mount JESD-30 Code Operating Temperature (Max) Subcategory Qualification Status Number of Elements Configuration JEDEC-95 Code Case Connection Polarity/Channel Type Power Dissipation-Max (Abs) Collector Current-Max (IC) DC Current Gain-Min (hFE) Power Dissipation Turn On Delay Time Supplier Device Package Power Dissipation-Max Continuous Drain Current (ID) Transistor Application Drain-source On Resistance-Max DS Breakdown Voltage-Min FET Technology Trigger Device Type Turn-Off Delay Time Transistor Element Material FET Type Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Input Capacitance (Ciss) (Max) @ Vds Gate Charge (Qg) (Max) @ Vgs Rise Time Fall Time (Typ) Gate to Source Voltage (Vgs) Drain Current-Max (Abs) (ID) Current - Continuous Drain (Id) @ 25°C Drain to Source Voltage (Vdss) Pulsed Drain Current-Max (IDM) Avalanche Energy Rating (Eas) Input Capacitance Transition Frequency Drive Voltage (Max Rds On,Min Rds On) Vgs (Max) Rds On Max Voltage - Off State Current - On State (It (RMS)) (Max) Voltage - Gate Trigger (Vgt) (Max) Current - Non Rep. Surge 50, 60Hz (Itsm) Current - Gate Trigger (Igt) (Max) Triac Type
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0.00000000 download Through Hole Tube 2007 Obsolete 1 (Unlimited) 175°C -55°C ROHS3 Compliant No 3 TO-220-3 Through Hole 175°C TJ MOSFET (Metal Oxide) 35 ns TO-220-3 1.8W Ta 288W Tc 88A 105 ns N-Channel 8.5mOhm @ 44A, 10V 4V @ 250μA 12300pF @ 25V 230nC @ 10V 28ns 16 ns 20V 88A Tc 75V 12.3nF 10V ±20V 8.5 mΩ
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0.00000000 download Tape & Reel (TR) Obsolete RoHS Compliant compliant 3 YES 150°C Other Transistors Single NPN 2W 2A 800 150MHz
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0.00000000 download Tape & Reel (TR) 2006 Obsolete Vendor Undefined ROHS3 Compliant NOT SPECIFIED NOT SPECIFIED 3 YES 150°C FET General Purpose Power Single N-CHANNEL 30W METAL-OXIDE SEMICONDUCTOR 16A
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0.00000000 download Surface Mount Tape & Reel (TR) 2007 Obsolete 1 (Unlimited) 2 EAR99 ROHS3 Compliant Lead Free Tin No TO-252-3, DPak (2 Leads + Tab), SC-63 Surface Mount 150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 SINGLE GULL WING 3 R-PSSO-G2 Other Transistors 1 SINGLE WITH BUILT-IN DIODE TO-252AA DRAIN N-CHANNEL 1W 36 ns 1W Ta 36W Tc 20A SWITCHING 0.02Ohm 20V 270 ns SILICON P-Channel 7m Ω @ 10A, 4.5V 4400pF @ 10V 57nC @ 4.5V 220ns 310 ns 12V 0.02A 20A Tc 20V 2.5V 4.5V ±12V
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