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Discrete Semiconductors

discrete semiconductor.jpg
Discrete Semiconductor refer to electronic components that are individual and separate from each other, as opposed to integrated circuits that contain multiple components on a single chip. These discrete components include diodes, transistors, thyristors, and other similar devices that perform specific functions in electronic circuits. They are commonly used in power supplies, amplifiers, and other electronic devices where precise control and regulation of electrical signals is required. Discrete Semiconductor Products are available in a variety of sizes, shapes, and specifications to meet the needs of different applications. They are widely used in the electronics industry and are essential components in many electronic devices.
Compare Image Name Manufacturer Pricing(USD) Quantity Weight(Kg) Size(LxWxH) Datasheet Factory Lead Time Mount Packaging Published Pbfree Code Part Status Moisture Sensitivity Level (MSL) Number of Terminations ECCN Code Max Operating Temperature Min Operating Temperature RoHS Status Lead Free Contact Plating Radiation Hardening Number of Pins Additional Feature Package / Case Reach Compliance Code Mounting Type Operating Temperature Technology Operating Mode HTS Code JESD-609 Code Terminal Finish Terminal Position Terminal Form Peak Reflow Temperature (Cel) Time@Peak Reflow Temperature-Max (s) Pin Count Surface Mount JESD-30 Code Operating Temperature (Max) Subcategory Qualification Status Power - Max Number of Elements Configuration JEDEC-95 Code Polarity Case Connection Polarity/Channel Type Power Dissipation-Max (Abs) Power Dissipation Turn On Delay Time Power Dissipation-Max Hold Current Collector Emitter Voltage (VCEO) RMS Current (Irms) Continuous Drain Current (ID) Transistor Application Drain-source On Resistance-Max DS Breakdown Voltage-Min FET Technology Trigger Device Type Turn-Off Delay Time Transistor Element Material FET Type Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Input Capacitance (Ciss) (Max) @ Vds Gate Charge (Qg) (Max) @ Vgs Rise Time Fall Time (Typ) Gate to Source Voltage (Vgs) FET Feature Drain Current-Max (Abs) (ID) Current - Continuous Drain (Id) @ 25°C Drain to Source Voltage (Vdss) Drive Voltage (Max Rds On,Min Rds On) Vgs (Max) Collector Base Voltage (VCBO) Emitter Base Voltage (VEBO) Voltage - Off State Current - On State (It (RMS)) (Max) Voltage - Gate Trigger (Vgt) (Max) Current - Non Rep. Surge 50, 60Hz (Itsm) Current - Gate Trigger (Igt) (Max) SCR Type Voltage - On State (Vtm) (Max) Current - Off State (Max) Current - On State (It (AV)) (Max) Triac Type
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0.00000000 download 16 Weeks Through Hole Bulk 2006 Active 1 (Unlimited) 3 EAR99 ROHS3 Compliant Tin TO-251-3 Short Leads, IPak, TO-251AA Through Hole 150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE 8541.29.00.95 SINGLE 260 NOT SPECIFIED 3 R-PSIP-T3 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN 15 ns 1W Ta 50W Tc 36A SWITCHING 0.039Ohm 100V 68 ns SILICON N-Channel 33m Ω @ 18A, 10V 3600pF @ 10V 72nC @ 10V 10ns 6 ns 20V 36A Ta 100V 4.5V 10V ±20V
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0.00000000 download Surface Mount Tape & Reel (TR) Obsolete 1 (Unlimited) 150°C -55°C ROHS3 Compliant Lead Free No 1 NPN 2W 60V 60V 6V
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0.00000000 download 16 Weeks Through Hole Tube 2011 Active 1 (Unlimited) EAR99 ROHS3 Compliant 3 TO-262-3 Full Pack, I2Pak Through Hole 175°C TJ MOSFET (Metal Oxide) NOT SPECIFIED NOT SPECIFIED 3 1.8W Ta 147W Tc 90A N-Channel 3.3m Ω @ 45A, 10V 4V @ 250μA 5850pF @ 25V 102nC @ 10V 90A Tc 40V 10V ±20V
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0.00000000 download 16 Weeks Surface Mount Tape & Reel (TR) 2012 Active 1 (Unlimited) EAR99 ROHS3 Compliant TO-252-3, DPak (2 Leads + Tab), SC-63 Surface Mount 150°C TJ MOSFET (Metal Oxide) 4 FET General Purpose Power Single 30W Tc 2.4A N-Channel 5 Ω @ 1.2A, 10V 165pF @ 25V 6.7nC @ 10V 2.4A Ta 500V 10V ±30V
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0.00000000 download 16 Weeks Surface Mount Tape & Reel (TR) 1997 Obsolete 1 (Unlimited) ROHS3 Compliant Lead Free No TO-252-3, DPak (2 Leads + Tab), SC-63 Surface Mount 175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE FET General Purpose Power 1 Single 1.2W 9 ns 1.2W Ta 45W Tc 22A 32 ns N-Channel 37m Ω @ 11A, 10V 2.5V @ 250μA 1100pF @ 25V 23nC @ 5V 6ns 5.4 ns 20V 22A Ta 55V 4.5V 10V ±20V
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0.00000000 download 16 Weeks Through Hole Tube 2010 yes Active 1 (Unlimited) ROHS3 Compliant TO-3P-3, SC-65-3 Through Hole 150°C TJ MOSFET (Metal Oxide) NOT SPECIFIED NOT SPECIFIED 4 200W Tc 30A N-Channel 210m Ω @ 15A, 10V 4750pF @ 25V 130nC @ 10V 30A Ta 600V 10V ±30V
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