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Discrete Semiconductors

discrete semiconductor.jpg
Discrete Semiconductor refer to electronic components that are individual and separate from each other, as opposed to integrated circuits that contain multiple components on a single chip. These discrete components include diodes, transistors, thyristors, and other similar devices that perform specific functions in electronic circuits. They are commonly used in power supplies, amplifiers, and other electronic devices where precise control and regulation of electrical signals is required. Discrete Semiconductor Products are available in a variety of sizes, shapes, and specifications to meet the needs of different applications. They are widely used in the electronics industry and are essential components in many electronic devices.
Compare Image Name Manufacturer Pricing(USD) Quantity Weight(Kg) Size(LxWxH) Datasheet Factory Lead Time Mount Packaging Published Series Pbfree Code Part Status Moisture Sensitivity Level (MSL) Number of Terminations ECCN Code Max Operating Temperature Min Operating Temperature RoHS Status Lead Free Contact Plating Radiation Hardening Number of Pins Package / Case REACH SVHC Reach Compliance Code Mounting Type Operating Temperature Technology Operating Mode Input Type HTS Code JESD-609 Code Terminal Finish Terminal Position Terminal Form Peak Reflow Temperature (Cel) Time@Peak Reflow Temperature-Max (s) Base Part Number Pin Count Surface Mount JESD-30 Code Operating Temperature (Max) Subcategory Qualification Status Max Power Dissipation Power - Max Diode Element Material Number of Elements Configuration Diode Type Application Number of Phases JEDEC-95 Code Forward Voltage Case Connection Polarity/Channel Type Power Dissipation-Max (Abs) Repetitive Peak Off-state Voltage Leakage Current (Max) On-State Voltage-Max Element Configuration Power Dissipation Turn On Delay Time Speed Current - Reverse Leakage @ Vr Voltage - Forward (Vf) (Max) @ If Operating Temperature - Junction Max Reverse Voltage (DC) Average Rectified Current Max Repetitive Reverse Voltage (Vrrm) Peak Non-Repetitive Surge Current Reverse Current-Max Reverse Recovery Time Power Dissipation-Max Max Collector Current Collector Emitter Breakdown Voltage Collector Emitter Voltage (VCEO) RMS Current (Irms) Continuous Drain Current (ID) Transistor Application Drain-source On Resistance-Max DS Breakdown Voltage-Min FET Technology Trigger Device Type Turn-Off Delay Time Transistor Element Material FET Type Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Input Capacitance (Ciss) (Max) @ Vds Gate Charge (Qg) (Max) @ Vgs Rise Time Fall Time (Typ) Gate to Source Voltage (Vgs) FET Feature Drain Current-Max (Abs) (ID) Current - Continuous Drain (Id) @ 25°C Drain to Source Voltage (Vdss) Pulsed Drain Current-Max (IDM) Avalanche Energy Rating (Eas) Transistor Type Drive Voltage (Max Rds On,Min Rds On) Vgs (Max) Current - Collector Cutoff (Max) Collector Emitter Saturation Voltage Vce(on) (Max) @ Vge, Ic IGBT Type Voltage - Collector Emitter Breakdown (Max) Current - Collector (Ic) (Max) Test Condition Gate Charge Td (on/off) @ 25°C Switching Energy Current - Drain (Idss) @ Vds (Vgs=0) Voltage - Cutoff (VGS off) @ Id Voltage - Breakdown (V(BR)GSS) Current Drain (Id) - Max Voltage - Off State Current - On State (It (RMS)) (Max) Current - Hold (Ih) (Max) Voltage - Gate Trigger (Vgt) (Max) Current - Non Rep. Surge 50, 60Hz (Itsm) Current - Gate Trigger (Igt) (Max) SCR Type Voltage - On State (Vtm) (Max) Current - Off State (Max) Current - On State (It (AV)) (Max) Triac Type Critical Rate of Rise of Commutation Voltage-Min DC Current Gain (hFE) (Min) @ Ic, Vce Resistor - Base (R1) Resistor - Emitter Base (R2)
2SK3431-AZ 2SK3431-AZ Renesas Electronics America 14.7206
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0.00000000 download 16 Weeks Through Hole Tube 2012 Obsolete 1 (Unlimited) EAR99 ROHS3 Compliant 3 TO-220-3 Full Pack Through Hole -40°C~150°C TJ 3 TRIACs Single 2mA 600V 5A TRIAC 5A 1.5V 50A @ 60Hz 20mA Standard 1V/us
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