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Discrete Semiconductors

discrete semiconductor.jpg
Discrete Semiconductor refer to electronic components that are individual and separate from each other, as opposed to integrated circuits that contain multiple components on a single chip. These discrete components include diodes, transistors, thyristors, and other similar devices that perform specific functions in electronic circuits. They are commonly used in power supplies, amplifiers, and other electronic devices where precise control and regulation of electrical signals is required. Discrete Semiconductor Products are available in a variety of sizes, shapes, and specifications to meet the needs of different applications. They are widely used in the electronics industry and are essential components in many electronic devices.
Compare Image Name Manufacturer Pricing(USD) Quantity Weight(Kg) Size(LxWxH) Datasheet Factory Lead Time Mount Packaging Published Series Pbfree Code Part Status Moisture Sensitivity Level (MSL) Number of Terminations Termination ECCN Code Max Operating Temperature Min Operating Temperature Length RoHS Status Lead Free Contact Plating Current Rating Radiation Hardening Number of Pins Additional Feature Package / Case REACH SVHC Reach Compliance Code Height Width Resistance Mounting Type Weight Operating Temperature Voltage - Rated DC Technology Operating Mode Manufacturer Package Identifier JESD-609 Code Terminal Finish Terminal Position Terminal Form Peak Reflow Temperature (Cel) Time@Peak Reflow Temperature-Max (s) Base Part Number Pin Count JESD-30 Code Number of Channels Subcategory Qualification Status Max Power Dissipation Power - Max Number of Elements Configuration JEDEC-95 Code Case Connection Polarity/Channel Type Element Configuration Power Dissipation Breakdown Voltage Turn On Delay Time Threshold Voltage Drain to Source Resistance Supplier Device Package Power Dissipation-Max Continuous Drain Current (ID) Max Junction Temperature (Tj) Transistor Application Drain-source On Resistance-Max DS Breakdown Voltage-Min FET Technology Turn-Off Delay Time Transistor Element Material FET Type Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Input Capacitance (Ciss) (Max) @ Vds Gate Charge (Qg) (Max) @ Vgs Rise Time Fall Time (Typ) Gate to Source Voltage (Vgs) Drain to Source Breakdown Voltage Dual Supply Voltage FET Feature Nominal Vgs Drain Current-Max (Abs) (ID) Current - Continuous Drain (Id) @ 25°C Drain to Source Voltage (Vdss) Pulsed Drain Current-Max (IDM) Avalanche Energy Rating (Eas) Input Capacitance Drive Voltage (Max Rds On,Min Rds On) Vgs (Max) Rds On Max Current - Drain (Idss) @ Vds (Vgs=0) Voltage - Cutoff (VGS off) @ Id Voltage - Breakdown (V(BR)GSS)
SI3433CDV-T1-GE3 SI3433CDV-T1-GE3 Vishay Siliconix 0.0000
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0.00000000 download 14 Weeks Surface Mount Tape & Reel (TR) 2014 TrenchFET® yes Active 1 (Unlimited) 6 EAR99 3.05mm ROHS3 Compliant Lead Free No 6 SOT-23-6 Thin, TSOT-23-6 Unknown 1.1mm 1.65mm 38MOhm Surface Mount 19.986414mg -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) DUAL GULL WING 260 30 6 1 Other Transistors 1 Single 1.6W 20 ns -1V 1.6W Ta 3.3W Tc -5.2A 150°C SWITCHING 50 ns SILICON P-Channel 38m Ω @ 5.2A, 4.5V 1V @ 250μA 1300pF @ 10V 45nC @ 8V 22ns 20 ns 8V -20V -1 V 6A 6A Tc 20V 1.8V 4.5V ±8V
SI4124DY-T1-E3 SI4124DY-T1-E3 Vishay Siliconix 0.7817
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0.00000000 download 14 Weeks Surface Mount Tape & Reel (TR) 2013 TrenchFET® yes Active 1 (Unlimited) 8 EAR99 5mm ROHS3 Compliant No 8 8-SOIC (0.154, 3.90mm Width) 1.55mm 4mm Surface Mount 186.993455mg -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) DUAL GULL WING 260 30 8 1 FET General Purpose Powers 1 Single 2.5W 30 ns 2.5W Ta 5.7W Tc 13.6A SWITCHING 0.0075Ohm 40V 38 ns SILICON N-Channel 7.5m Ω @ 14A, 10V 3V @ 250μA 3540pF @ 20V 77nC @ 10V 14ns 11 ns 20V 20.5A 20.5A Tc 40V 4.5V 10V ±20V
SI4967DY-T1-E3 SI4967DY-T1-E3 Vishay Siliconix 0.0000
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0.00000000 download Surface Mount Tape & Reel (TR) 2014 TrenchFET® yes Obsolete 1 (Unlimited) 8 EAR99 5mm ROHS3 Compliant Lead Free No 8 8-SOIC (0.154, 3.90mm Width) 1.55mm 4mm 23mOhm Surface Mount 186.993455mg -55°C~150°C TJ ENHANCEMENT MODE e3 Matte Tin (Sn) GULL WING 260 40 8 Other Transistors 2W 2 Dual 2W 25 ns 7.5A METAL-OXIDE SEMICONDUCTOR 210 ns SILICON 2 P-Channel (Dual) 23m Ω @ 7.5A, 4.5V 450mV @ 250μA (Min) 55nC @ 10V 40ns 95 ns 8V -12V Logic Level Gate 12V 30A
SI2301CDS-T1-GE3 SI2301CDS-T1-GE3 Vishay Siliconix 0.0000
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0.00000000 download 14 Weeks Surface Mount Tape & Reel (TR) 2012 TrenchFET® Active 1 (Unlimited) 150°C -55°C 3.04mm ROHS3 Compliant Lead Free Tin No 3 TO-236-3, SC-59, SOT-23-3 No SVHC 1.12mm 1.4mm 112mOhm Surface Mount 1.437803g -55°C~150°C TJ MOSFET (Metal Oxide) 1 1 Single 1.6W 11 ns -1V 90mOhm SOT-23-3 (TO-236) 860mW Ta 1.6W Tc -3.1A 150°C 30 ns P-Channel 112mOhm @ 2.8A, 4.5V 1V @ 250μA 405pF @ 10V 10nC @ 4.5V 35ns 35 ns 8V -20V -400 mV 3.1A Tc 20V 405pF 2.5V 4.5V ±8V 112 mΩ
SQJ940EP-T1_GE3 SQJ940EP-T1_GE3 Vishay Siliconix 0.0000
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0.00000000 download 12 Weeks Surface Mount Tape & Reel (TR) 2013 Automotive, AEC-Q101, TrenchFET® Active 1 (Unlimited) 4 EAR99 ROHS3 Compliant Lead Free No 8 PowerPAK® SO-8 Dual Unknown Surface Mount -55°C~175°C TJ ENHANCEMENT MODE PowerPAK SO-8L Dual Asymmetric SINGLE GULL WING R-PSSO-G4 2 43W 48W 43W 2 DRAIN Dual 7.7 ns 2V 18A 0.016Ohm 40V METAL-OXIDE SEMICONDUCTOR 47 ns SILICON 2 N-Channel (Dual) 16m Ω @ 15A, 10V 2.5V @ 250μA 896pF @ 20V 20nC @ 20V 9.5ns 13.5 ns 20V Logic Level Gate 15A 15A Ta 18A Tc 40V 60A
IRFP150 IRFP150 Vishay Siliconix 0.3926
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0.00000000 download Through Hole Tube 2015 Obsolete 1 (Unlimited) 175°C -55°C 15.87mm Non-RoHS Compliant Contains Lead 41A No 3 TO-247-3 20.7mm 5.31mm Through Hole 38.000013g -55°C~175°C TJ 100V MOSFET (Metal Oxide) 1 1 Single 230W 16 ns 55mOhm TO-247-3 230W Tc 41A 60 ns N-Channel 55mOhm @ 25A, 10V 4V @ 250μA 2800pF @ 25V 140nC @ 10V 120ns 81 ns 20V 41A Tc 100V 2.8nF 10V ±20V 55 mΩ
IRFZ48RSPBF IRFZ48RSPBF Vishay Siliconix 1.7670
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0.00000000 download 8 Weeks Surface Mount Tube 2014 Active 1 (Unlimited) 2 EAR99 10.67mm ROHS3 Compliant 50A No 3 AVALANCHE RATED, HIGH RELIABILITY TO-263-3, D2Pak (2 Leads + Tab), TO-263AB 4.83mm 9.65mm Surface Mount 1.437803g -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE GULL WING 260 40 4 R-PSSO-G2 1 1 DRAIN Single 190W 8.1 ns 190W Tc 50A SWITCHING 210 ns SILICON N-Channel 18m Ω @ 43A, 10V 4V @ 250μA 2400pF @ 25V 110nC @ 10V 250ns 250 ns 20V 60V 50A Tc 290A 10V ±20V
2N4118A 2N4118A Vishay Siliconix 0.0000
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0.00000000 download 10 Weeks Through Hole Bulk 2009 Obsolete 1 (Unlimited) 175°C -55°C Non-RoHS Compliant 50mA No 4 TO-206AF, TO-72-4 Metal Can Through Hole -55°C~175°C TJ 300mW 300mW Single 300mW -40V 7kOhm TO-206AF (TO-72) N-Channel 3pF @ 10V -40V 3pF 80μA @ 10V 1V @ 1nA 40V
IRFBE30STRL IRFBE30STRL Vishay Siliconix 0.0000
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0.00000000 download Surface Mount Tape & Reel (TR) 1997 Active 1 (Unlimited) Non-RoHS Compliant TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) D2PAK 125W Tc 4.1A N-Channel 3Ohm @ 2.5A, 10V 4V @ 250μA 1300pF @ 25V 78nC @ 10V 4.1A Tc 800V 1.3nF 10V ±20V 3 Ω
SI4564DY-T1-GE3 SI4564DY-T1-GE3 Vishay Siliconix 0.0000
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0.00000000 download 14 Weeks Surface Mount Tape & Reel (TR) 2010 TrenchFET® yes Active 1 (Unlimited) 8 EAR99 ROHS3 Compliant Lead Free No 8 8-SOIC (0.154, 3.90mm Width) Unknown 1.75mm 21mOhm Surface Mount 506.605978mg -55°C~150°C TJ ENHANCEMENT MODE e3 Matte Tin (Sn) DUAL GULL WING 260 40 SI4564 8 2 Other Transistors 3.2W 3.1W 3.2W 2 N-CHANNEL AND P-CHANNEL 2W 42 ns 800mV 10A 150°C SWITCHING 40V METAL-OXIDE SEMICONDUCTOR 40 ns SILICON N and P-Channel 17.5m Ω @ 8A, 10V 2V @ 250μA 855pF @ 20V 31nC @ 10V 40ns 15 ns 20V Logic Level Gate 800 mV 8A 10A 9.2A 40V
2N4861JTX02 2N4861JTX02 Vishay Siliconix 0.0000
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0.00000000 Through Hole Tube Obsolete 1 (Unlimited) 200°C -65°C Non-RoHS Compliant Yes 3 TO-206AA, TO-18-3 Metal Can Through Hole Single -30V
IRFPF40 IRFPF40 Vishay Siliconix 1.7105
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0.00000000 download Through Hole Tube 2017 Obsolete 1 (Unlimited) 150°C -55°C 15.87mm Non-RoHS Compliant Contains Lead 4.7A 3 TO-247-3 20.7mm 5.31mm Through Hole 38.000013g -55°C~150°C TJ 900V MOSFET (Metal Oxide) 1 Single 15 ns 2.5Ohm TO-247-3 150W Tc 4.7A 110 ns N-Channel 2.5Ohm @ 2.8A, 10V 4V @ 250μA 1600pF @ 25V 120nC @ 10V 36ns 32 ns 20V 900V 4.7A Tc 900V 1.6nF 10V ±20V 2.5 Ω
2N5547JTXL01 2N5547JTXL01 Vishay Siliconix 0.0000
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0.00000000 Through Hole Tube Obsolete 1 (Unlimited) Non-RoHS Compliant TO-71-6 Through Hole TO-71
SIR862DP-T1-GE3 SIR862DP-T1-GE3 Vishay Siliconix 0.0000
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0.00000000 download 14 Weeks Surface Mount Tape & Reel (TR) 2010 TrenchFET® yes Active 1 (Unlimited) 5 EAR99 ROHS3 Compliant Lead Free No 8 PowerPAK® SO-8 Surface Mount 506.605978mg -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE DUAL C BEND 260 30 8 R-XDSO-C5 1 FET General Purpose Power 1 DRAIN Single 28 ns 5.2W Ta 69W Tc 32A SWITCHING 25V 39 ns SILICON N-Channel 2.8m Ω @ 15A, 10V 2.3V @ 250μA 3800pF @ 10V 90nC @ 10V 16ns 17 ns 20V 50A 50A Tc 25V 70A 4.5V 10V ±20V
SI7997DP-T1-GE3 SI7997DP-T1-GE3 Vishay Siliconix 0.0000
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0.00000000 download 14 Weeks Surface Mount Tape & Reel (TR) 2015 TrenchFET® yes Active 1 (Unlimited) 5 EAR99 ROHS3 Compliant Lead Free 8 PowerPAK® SO-8 Dual No SVHC unknown 1.12mm 5.5mOhm Surface Mount 506.605978mg -55°C~150°C TJ ENHANCEMENT MODE e3 Matte Tin (Sn) C BEND 260 40 SI7997 8 R-XDSO-C5 Other Transistors Not Qualified 46W 2 DRAIN Dual 3.5W 15 ns -2.2V -20.8A 150°C METAL-OXIDE SEMICONDUCTOR 115 ns SILICON 2 P-Channel (Dual) 5.5m Ω @ 20A, 10V 2.2V @ 250μA 6200pF @ 15V 160nC @ 10V 40 ns 20V -30V Standard 60A 60A 30V 100A 45 mJ
SI4904DY-T1-GE3 SI4904DY-T1-GE3 Vishay Siliconix 0.0000
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0.00000000 download 14 Weeks Surface Mount Tape & Reel (TR) 2016 TrenchFET® Active 1 (Unlimited) 150°C -55°C 5mm ROHS3 Compliant No 8 8-SOIC (0.154, 3.90mm Width) No SVHC 1.5mm 4mm Surface Mount 186.993455mg -55°C~150°C TJ SI4904 2 2W 3.25W 2 Dual 2W 88 ns 2V 16mOhm 8-SO 8A 62 ns 2 N-Channel (Dual) 16mOhm @ 5A, 10V 2V @ 250μA 2390pF @ 20V 85nC @ 10V 117ns 19 ns 16V 40V Standard 8A 40V 2.39nF 16 mΩ
IRL620STRL IRL620STRL Vishay Siliconix 0.0000
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0.00000000 download Surface Mount Tape & Reel (TR) 2016 Obsolete 1 (Unlimited) Non-RoHS Compliant TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) D2PAK 3.1W Ta 50W Tc 5.2A N-Channel 800mOhm @ 3.1A, 10V 2V @ 250μA 360pF @ 25V 16nC @ 5V 5.2A Tc 200V 360pF 4V 10V ±10V 800 mΩ
SI7958DP-T1-GE3 SI7958DP-T1-GE3 Vishay Siliconix 0.0000
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0.00000000 download Surface Mount Tape & Reel (TR) 2015 TrenchFET® yes Obsolete 1 (Unlimited) 6 EAR99 4.9mm ROHS3 Compliant Lead Free No 8 PowerPAK® SO-8 Dual Unknown 1.04mm 5.89mm 16.5mOhm Surface Mount 506.605978mg -55°C~150°C TJ ENHANCEMENT MODE e3 Matte Tin (Sn) C BEND 260 40 SI7958 8 R-XDSO-C6 2 FET General Purpose Power 1.4W 2 DRAIN Dual 17 ns 3V 11.3A METAL-OXIDE SEMICONDUCTOR 66 ns SILICON 2 N-Channel (Dual) 16.5m Ω @ 11.3A, 10V 3V @ 250μA 75nC @ 10V 17ns 17 ns 20V 40V Logic Level Gate 7.2A 40A 61 mJ
SIHB12N65E-GE3 SIHB12N65E-GE3 Vishay Siliconix 2.4214
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0.00000000 download 18 Weeks Surface Mount Tube 2009 Active 1 (Unlimited) 2 ROHS3 Compliant Lead Free No 3 TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Unknown Surface Mount 1.437803g -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE GULL WING R-PSSO-G2 1 1 Single 156W 16 ns 156W Tc 12A SWITCHING 35 ns SILICON N-Channel 380m Ω @ 6A, 10V 4V @ 250μA 1224pF @ 100V 70nC @ 10V 19ns 18 ns 20V 700V 12A Tc 650V 28A 226 mJ 10V ±30V
SIR166DP-T1-GE3 SIR166DP-T1-GE3 Vishay Siliconix 0.0000
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0.00000000 download 14 Weeks Surface Mount Tape & Reel (TR) 2010 TrenchFET® yes Active 1 (Unlimited) 5 EAR99 ROHS3 Compliant Lead Free No 8 PowerPAK® SO-8 Unknown 4MOhm Surface Mount 506.605978mg -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 MATTE TIN DUAL C BEND 260 40 8 R-XDSO-C5 1 FET General Purpose Power 1 DRAIN Single 5W 28 ns 1.2V 5W Ta 48W Tc 40A SWITCHING 44 ns SILICON N-Channel 3.2m Ω @ 15A, 10V 2.2V @ 250μA 3340pF @ 15V 77nC @ 10V 21ns 16 ns 20V 30V 1.2 V 40A Tc 70A 4.5V 10V ±20V
SI7491DP-T1-E3 SI7491DP-T1-E3 Vishay Siliconix 0.0000
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0.00000000 download Surface Mount Tape & Reel (TR) 2011 TrenchFET® yes Obsolete 1 (Unlimited) 5 EAR99 ROHS3 Compliant Lead Free No 8 PowerPAK® SO-8 Unknown 8.5mOhm Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) DUAL C BEND 260 40 8 R-XDSO-C5 Other Transistors 1 DRAIN Single 1.8W 150 ns -3V 1.8W Ta -18A SWITCHING 120 ns SILICON P-Channel 8.5m Ω @ 18A, 10V 3V @ 250μA 85nC @ 5V 190ns 190 ns 20V -30V -3 V 11A Ta 30V 50A 4.5V 10V ±20V
SUD35N10-26P-GE3 SUD35N10-26P-GE3 Vishay Siliconix 0.0000
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0.00000000 download 14 Weeks Surface Mount Tape & Reel (TR) 2013 TrenchFET® Active 1 (Unlimited) 2 ROHS3 Compliant Lead Free Tin 3 TO-252-3, DPak (2 Leads + Tab), SC-63 unknown 26MOhm Surface Mount 1.437803g -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE GULL WING R-PSSO-G2 1 1 TO-252AA DRAIN Single 10 ns 8.3W Ta 83W Tc 35A SWITCHING 15 ns SILICON N-Channel 26m Ω @ 12A, 10V 4.4V @ 250μA 2000pF @ 12V 47nC @ 10V 10ns 10 ns 20V 35A Tc 100V 40A 55 mJ 7V 10V ±20V
IRFB16N50KPBF IRFB16N50KPBF Vishay Siliconix 0.5807
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0.00000000 download Through Hole Tube 2004 Obsolete 1 (Unlimited) 150°C -55°C 10.41mm ROHS3 Compliant Lead Free 17A 3 TO-220-3 9.01mm 4.7mm Through Hole 6.000006g -55°C~150°C TJ 500V MOSFET (Metal Oxide) 1 Single 280W 20 ns 350mOhm TO-220AB 280W Tc 17A 38 ns N-Channel 350mOhm @ 10A, 10V 5V @ 250μA 2210pF @ 25V 89nC @ 10V 77ns 30 ns 30V 500V 17A Tc 500V 2.21nF 10V ±30V 350 mΩ
SI4453DY-T1-E3 SI4453DY-T1-E3 Vishay Siliconix 0.0000
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0.00000000 download Surface Mount Tape & Reel (TR) 2013 TrenchFET® Obsolete 1 (Unlimited) 150°C -55°C 5mm ROHS3 Compliant 8 8-SOIC (0.154, 3.90mm Width) 1.55mm 4mm Surface Mount 186.993455mg -55°C~150°C TJ MOSFET (Metal Oxide) 1 1 Single 1.5W 110 ns 6.5mOhm 8-SO 1.5W Ta 10A 410 ns P-Channel 6.5mOhm @ 14A, 4.5V 900mV @ 600μA 165nC @ 5V 235ns 235 ns 8V -12V 10A Ta 12V 1.8V 4.5V ±8V 6.5 mΩ
SIS414DN-T1-GE3 SIS414DN-T1-GE3 Vishay Siliconix 0.0000
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0.00000000 download 15 Weeks Surface Mount Tape & Reel (TR) 2011 TrenchFET® yes Obsolete 1 (Unlimited) 5 EAR99 ROHS3 Compliant Lead Free No 8 PowerPAK® 1212-8 Unknown Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 MATTE TIN DUAL C BEND 260 40 8 S-PDSO-C5 1 FET General Purpose Power 1 DRAIN Single 3.4W 7 ns 600mV 3.4W Ta 31W Tc 20A SWITCHING 30V 21 ns SILICON N-Channel 16m Ω @ 10A, 4.5V 1.5V @ 250μA 795pF @ 15V 33nC @ 10V 13ns 8 ns 12V 20A Tc 30V 50A 5 mJ 2.5V 4.5V ±12V
2N5546JTX01 2N5546JTX01 Vishay Siliconix 0.0000
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0.00000000 Through Hole Tube 2016 Obsolete 1 (Unlimited) Non-RoHS Compliant TO-71-6 Through Hole
IRF9Z10PBF IRF9Z10PBF Vishay Siliconix 0.0000
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0.00000000 download 11 Weeks Through Hole Tube 2014 Active 1 (Unlimited) 175°C -55°C 10.41mm ROHS3 Compliant Lead Free No 3 TO-220-3 Unknown 9.01mm 4.7mm Through Hole 6.000006g -55°C~175°C TJ MOSFET (Metal Oxide) 1 1 Single 43W 11 ns -4V 500mOhm TO-220AB 43W Tc 6.7A 10 ns P-Channel 500mOhm @ 4A, 10V 4V @ 250μA 270pF @ 25V 12nC @ 10V 63ns 31 ns 20V 6.7A Tc 60V 270pF 10V ±20V 500 mΩ
IRF9510STRL IRF9510STRL Vishay Siliconix 5.7243
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0.00000000 download Surface Mount Tape & Reel (TR) 2016 Obsolete 1 (Unlimited) 175°C -55°C 10.41mm Non-RoHS Compliant Contains Lead -4A 3 TO-263-3, D2Pak (2 Leads + Tab), TO-263AB 4.83mm 9.65mm Surface Mount 1.437803g -55°C~175°C TJ -100V MOSFET (Metal Oxide) 1 Single 10 ns 1.2Ohm D2PAK 3.7W Ta 43W Tc 4A 15 ns P-Channel 1.2Ohm @ 2.4A, 10V 4V @ 250μA 200pF @ 25V 8.7nC @ 10V 27ns 17 ns 20V -100V 4A Tc 100V 200pF 10V ±20V 1.2 Ω
SIB417DK-T1-GE3 SIB417DK-T1-GE3 Vishay Siliconix 0.0000
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0.00000000 download Surface Mount Tape & Reel (TR) 2016 TrenchFET® yes Obsolete 1 (Unlimited) 3 SMD/SMT EAR99 ROHS3 Compliant No 6 PowerPAK® SC-75-6L Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 MATTE TIN DUAL 260 40 6 S-XDSO-N3 Other Transistors 1 SINGLE WITH BUILT-IN DIODE DRAIN 2.4W 13 ns 2.4W Ta 13W Tc -9A SWITCHING 0.052Ohm 35 ns SILICON P-Channel 52m Ω @ 5.6A, 4.5V 1V @ 250μA 675pF @ 4V 12.75nC @ 5V 31ns 18 ns 5V -8V 8V -1 V 9A 9A Tc 15A 1.2V 4.5V ±5V
SI4490DY-T1-GE3 SI4490DY-T1-GE3 Vishay Siliconix 0.0000
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0.00000000 download 14 Weeks Surface Mount Tape & Reel (TR) 2013 TrenchFET® yes Active 1 (Unlimited) 8 EAR99 5mm ROHS3 Compliant Lead Free Tin No 8 8-SOIC (0.154, 3.90mm Width) No SVHC 1.55mm 4mm 80mOhm Surface Mount 506.605978mg -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 DUAL GULL WING 260 30 8 1 FET General Purpose Powers 1 Single 3.1W 14 ns 2V 1.56W Ta 2.85A 200V 32 ns SILICON N-Channel 80m Ω @ 4A, 10V 2V @ 250μA (Min) 42nC @ 10V 20ns 25 ns 20V 2.85A Ta 200V 6V 10V ±20V
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