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Discrete Semiconductors

discrete semiconductor.jpg
Discrete Semiconductor refer to electronic components that are individual and separate from each other, as opposed to integrated circuits that contain multiple components on a single chip. These discrete components include diodes, transistors, thyristors, and other similar devices that perform specific functions in electronic circuits. They are commonly used in power supplies, amplifiers, and other electronic devices where precise control and regulation of electrical signals is required. Discrete Semiconductor Products are available in a variety of sizes, shapes, and specifications to meet the needs of different applications. They are widely used in the electronics industry and are essential components in many electronic devices.
Compare Image Name Manufacturer Pricing(USD) Quantity Weight(Kg) Size(LxWxH) Datasheet Factory Lead Time Mount Packaging Published Series Part Status Moisture Sensitivity Level (MSL) Number of Terminations Max Operating Temperature Min Operating Temperature Length RoHS Status Voltage - Rated Current Rating Radiation Hardening Number of Pins Package / Case REACH SVHC Frequency Height Width Resistance Mounting Type Operating Temperature Technology Operating Mode Evaluation Kit Terminal Position Peak Reflow Temperature (Cel) Time@Peak Reflow Temperature-Max (s) Base Part Number Surface Mount JESD-30 Code Number of Channels Gain Max Power Dissipation Reference Standard Number of Elements Configuration Diode Type Forward Current Forward Voltage Case Connection Current Rating (Amps) Max Surge Current Element Configuration Power Dissipation Turn On Delay Time Max Reverse Leakage Current Threshold Voltage Drain to Source Resistance Supplier Device Package Speed Current - Reverse Leakage @ Vr Voltage - Forward (Vf) (Max) @ If Operating Temperature - Junction Max Reverse Voltage (DC) Average Rectified Current Peak Reverse Current Max Repetitive Reverse Voltage (Vrrm) Peak Non-Repetitive Surge Current Diode Configuration Max Forward Surge Current (Ifsm) Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Reverse Recovery Time Power Dissipation-Max Continuous Drain Current (ID) Capacitance @ Vr, F Max Junction Temperature (Tj) Transistor Application Drain-source On Resistance-Max DS Breakdown Voltage-Min Turn-Off Delay Time FET Type Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Input Capacitance (Ciss) (Max) @ Vds Gate Charge (Qg) (Max) @ Vgs Rise Time Fall Time (Typ) Gate to Source Voltage (Vgs) Drain to Source Breakdown Voltage Nominal Vgs Drain Current-Max (Abs) (ID) Current - Continuous Drain (Id) @ 25°C Drain to Source Voltage (Vdss) Pulsed Drain Current-Max (IDM) Current - Test Transistor Type Voltage - Test Input Capacitance Power - Output Drive Voltage (Max Rds On,Min Rds On) Vgs (Max) Rds On Max
C3M0120100K C3M0120100K Cree/Wolfspeed 0.0000
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0.00000000 download 16 Weeks Tube 2016 C3M™ Active 1 (Unlimited) 4 RoHS Compliant TO-247-4 Through Hole -55°C~150°C TJ SiCFET (Silicon Carbide) ENHANCEMENT MODE SINGLE NOT SPECIFIED NOT SPECIFIED NO R-PSFM-T4 IEC-60747-8-4 1 SINGLE WITH BUILT-IN DIODE DRAIN 83W Tc SWITCHING 0.155Ohm 1000V N-Channel 155m Ω @ 15A, 15V 3.5V @ 3mA 350pF @ 600V 21.5nC @ 15V 22A 22A Tc 1000V 50A 15V ±15V
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0.00000000 download 13 Weeks Tube Automotive, AEC-Q101, E Active 1 (Unlimited) RoHS Compliant TO-247-3 Through Hole -55°C~150°C TJ SiCFET (Silicon Carbide) TO-247-3 125W Tc N-Channel 84.5mOhm @ 20A, 15V 3.5V @ 5mA 660pF @ 600V 30.4nC @ 15V 35A Tc 900V 15V +18V, -8V
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0.00000000 C3M™ Active 1 (Unlimited) ROHS3 Compliant TO-247-3 Through Hole -40°C~175°C TJ SiCFET (Silicon Carbide) TO-247-3 556W Tc N-Channel 22.3mOhm @ 75A, 15V 3.6V @ 23mA 6085pF @ 1000V 207nC @ 15V 115A Tc 1200V 15V +15V, -4V
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0.00000000 16 Weeks Through Hole Tube 2013 Z-FET™ Active 1 (Unlimited) 150°C -55°C 16.13mm RoHS Compliant No 3 TO-247-3 Unknown 25.5mm 5.21mm Through Hole -55°C~150°C TJ SiCFET (Silicon Carbide) Yes 1 1 Single 125W 9 ns 2.5V 160mOhm TO-247-3 125W Tc 19A 150°C 16 ns N-Channel 196mOhm @ 10A, 20V 2.5V @ 500μA 527pF @ 800V 32.6nC @ 20V 12ns 7 ns 20V 1.2kV 19A Tc 1200V 527pF 20V +25V, -10V 196 mΩ
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0.00000000 12 Weeks Tape & Reel (TR) Active 1 (Unlimited) RoHS Compliant 65V 2-Flatpack, Fin Leads, Flanged 2.17GHz 18dB H-34288-4/2 1.2A LDMOS 30V 32W
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0.00000000 download Tape & Reel (TR) Not For New Designs 1 (Unlimited) RoHS Compliant 65V 2-Flatpack, Fin Leads 2.14GHz PTFA211801 15.5dB 1.2A LDMOS 28V 140W
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0.00000000 16 Weeks Through Hole Tube 2013 Z-FET™ Active 1 (Unlimited) 150°C -55°C 16.13mm RoHS Compliant No 3 TO-247-3 Unknown 21.1mm 5.21mm Through Hole -55°C~150°C TJ SiCFET (Silicon Carbide) Yes 1 1 Single 69W 9 ns 2.4V 950mOhm TO-247-3 69W Tc 4.9A 15 ns N-Channel 1.1Ohm @ 2A, 20V 2.4V @ 100μA 191pF @ 1000V 13nC @ 20V 46ns 9 ns 25V 2.4 V 4.9A Tc 1700V 191pF 20V +25V, -10V 1.1 Ω
CMF20120D CMF20120D Cree/Wolfspeed 2.7676
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0.00000000 download Strip Not For New Designs 1 (Unlimited) RoHS Compliant 65V 2-Flatpack, Fin Leads 420MHz~500MHz 21dB 1μA 900mA LDMOS 28V 150W
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0.00000000 GaN Active 1 (Unlimited) 84V 440206 4GHz 14dB 440206 400mA HEMT 28V 45W
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