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Discrete Semiconductors

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Discrete Semiconductor refer to electronic components that are individual and separate from each other, as opposed to integrated circuits that contain multiple components on a single chip. These discrete components include diodes, transistors, thyristors, and other similar devices that perform specific functions in electronic circuits. They are commonly used in power supplies, amplifiers, and other electronic devices where precise control and regulation of electrical signals is required. Discrete Semiconductor Products are available in a variety of sizes, shapes, and specifications to meet the needs of different applications. They are widely used in the electronics industry and are essential components in many electronic devices.
Compare Image Name Manufacturer Pricing(USD) Quantity Weight(Kg) Size(LxWxH) Datasheet Factory Lead Time Mount Packaging Published Pbfree Code Part Status Moisture Sensitivity Level (MSL) Number of Terminations ECCN Code RoHS Status Additional Feature Package / Case Reach Compliance Code Mounting Type Operating Temperature Technology Operating Mode HTS Code JESD-609 Code Terminal Finish Terminal Position Terminal Form Peak Reflow Temperature (Cel) Time@Peak Reflow Temperature-Max (s) Pin Count Surface Mount JESD-30 Code Operating Temperature (Max) Subcategory Qualification Status Max Power Dissipation Power - Max Diode Element Material Number of Elements Configuration Diode Type Output Current-Max Rep Pk Reverse Voltage-Max JEDEC-95 Code Non-rep Pk Forward Current-Max Polarity Tolerance Case Connection Polarity/Channel Type Power Dissipation-Max (Abs) On-State Current-Max Repetitive Peak Off-state Voltage Non-Repetitive Pk On-state Cur Holding Current-Max Supplier Device Package Speed Current - Reverse Leakage @ Vr Voltage - Forward (Vf) (Max) @ If Operating Temperature - Junction Diode Configuration Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Reverse Current-Max Reverse Recovery Time Power Dissipation-Max Reverse Test Voltage Max Collector Current Reverse Recovery Time-Max Collector Emitter Breakdown Voltage Hold Current Collector Emitter Voltage (VCEO) RMS Current (Irms) Capacitance @ Vr, F Transistor Application Trigger Device Type Transistor Element Material FET Type Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Input Capacitance (Ciss) (Max) @ Vds Gate Charge (Qg) (Max) @ Vgs Drain Current-Max (Abs) (ID) Current - Continuous Drain (Id) @ 25°C Drain to Source Voltage (Vdss) Transistor Type Transition Frequency Drive Voltage (Max Rds On,Min Rds On) Vgs (Max) Current - Collector Cutoff (Max) Voltage - Collector Emitter Breakdown (Max) Current - Collector (Ic) (Max) Reference Voltage Voltage Tol-Max Working Test Current Dynamic Impedance-Max Voltage - Off State Current - On State (It (RMS)) (Max) Impedance-Max Voltage - Zener (Nom) (Vz) Repetitive Peak Reverse Voltage Voltage - Gate Trigger (Vgt) (Max) Current - Non Rep. Surge 50, 60Hz (Itsm) Current - Gate Trigger (Igt) (Max) SCR Type Voltage - On State (Vtm) (Max) Triac Type DC Current Gain (hFE) (Min) @ Ic, Vce Vce Saturation (Max) @ Ib, Ic Frequency - Transition Knee Impedance-Max
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