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Discrete Semiconductors

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Discrete Semiconductor refer to electronic components that are individual and separate from each other, as opposed to integrated circuits that contain multiple components on a single chip. These discrete components include diodes, transistors, thyristors, and other similar devices that perform specific functions in electronic circuits. They are commonly used in power supplies, amplifiers, and other electronic devices where precise control and regulation of electrical signals is required. Discrete Semiconductor Products are available in a variety of sizes, shapes, and specifications to meet the needs of different applications. They are widely used in the electronics industry and are essential components in many electronic devices.
Compare Image Name Manufacturer Pricing(USD) Quantity Weight(Kg) Size(LxWxH) Datasheet Factory Lead Time Mount Packaging Published Pbfree Code Part Status Moisture Sensitivity Level (MSL) Number of Terminations ECCN Code RoHS Status Number of Pins Additional Feature Package / Case Reach Compliance Code Mounting Type Operating Temperature Technology Operating Mode HTS Code JESD-609 Code Terminal Finish Terminal Position Terminal Form Peak Reflow Temperature (Cel) Time@Peak Reflow Temperature-Max (s) Pin Count Surface Mount JESD-30 Code Operating Temperature (Max) Subcategory Qualification Status Max Power Dissipation Power - Max Diode Element Material Number of Elements Configuration Diode Type Output Current-Max Number of Phases Rep Pk Reverse Voltage-Max JEDEC-95 Code Non-rep Pk Forward Current-Max Tolerance Case Connection Breakdown Voltage-Min Polarity/Channel Type Power Dissipation-Max (Abs) Repetitive Peak Off-state Voltage Leakage Current (Max) Critical Rate of Rise of Off-State Voltage-Min Holding Current-Max Element Configuration Power Dissipation Supplier Device Package Speed Current - Reverse Leakage @ Vr Voltage - Forward (Vf) (Max) @ If Operating Temperature - Junction Diode Configuration Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Reverse Recovery Time Power Dissipation-Max Reverse Recovery Time-Max Hold Current RMS Current (Irms) Capacitance @ Vr, F Transistor Application Drain-source On Resistance-Max FET Technology Trigger Device Type Transistor Element Material FET Type Input Capacitance (Ciss) (Max) @ Vds Gate to Source Voltage (Vgs) Drain to Source Voltage (Vdss) Transistor Type Input Capacitance Transition Frequency Current - Collector Cutoff (Max) Voltage - Collector Emitter Breakdown (Max) Current - Collector (Ic) (Max) Current - Drain (Idss) @ Vds (Vgs=0) Voltage - Cutoff (VGS off) @ Id Resistance - RDS(On) Voltage - Breakdown (V(BR)GSS) Current Drain (Id) - Max Reference Voltage Voltage Tol-Max Working Test Current Dynamic Impedance-Max Voltage - Off State Current - On State (It (RMS)) (Max) Voltage - Peak Reverse (Max) Impedance-Max Voltage - Zener (Nom) (Vz) Voltage - Gate Trigger (Vgt) (Max) Current - Gate Trigger (Igt) (Max) Triac Type DC Current Gain (hFE) (Min) @ Ic, Vce Vce Saturation (Max) @ Ib, Ic Frequency - Transition
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