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Discrete Semiconductors

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Discrete Semiconductor refer to electronic components that are individual and separate from each other, as opposed to integrated circuits that contain multiple components on a single chip. These discrete components include diodes, transistors, thyristors, and other similar devices that perform specific functions in electronic circuits. They are commonly used in power supplies, amplifiers, and other electronic devices where precise control and regulation of electrical signals is required. Discrete Semiconductor Products are available in a variety of sizes, shapes, and specifications to meet the needs of different applications. They are widely used in the electronics industry and are essential components in many electronic devices.
Compare Image Name Manufacturer Pricing(USD) Quantity Weight(Kg) Size(LxWxH) Datasheet Factory Lead Time Mount Packaging Published Pbfree Code Part Status Moisture Sensitivity Level (MSL) Number of Terminations ECCN Code RoHS Status Additional Feature Package / Case Reach Compliance Code Mounting Type Operating Temperature Technology HTS Code JESD-609 Code Terminal Finish Terminal Position Terminal Form Peak Reflow Temperature (Cel) Time@Peak Reflow Temperature-Max (s) Pin Count Surface Mount JESD-30 Code Operating Temperature (Max) Operating Temperature (Min) Subcategory Qualification Status Power - Max Diode Element Material Number of Elements Configuration Diode Type Output Current-Max Number of Phases Rep Pk Reverse Voltage-Max Non-rep Pk Forward Current-Max Voltage - Output Polarity Tolerance Case Connection Breakdown Voltage-Min Polarity/Channel Type Power Dissipation-Max (Abs) Repetitive Peak Off-state Voltage Leakage Current (Max) Non-Repetitive Pk On-state Cur Supplier Device Package Speed Current - Reverse Leakage @ Vr Voltage - Forward (Vf) (Max) @ If Operating Temperature - Junction Diode Configuration Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Reverse Current-Max Reverse Recovery Time Power Dissipation-Max Max Collector Current Collector Emitter Breakdown Voltage Hold Current Collector Emitter Voltage (VCEO) RMS Current (Irms) Capacitance @ Vr, F Transistor Application Trigger Device Type Transistor Element Material FET Type Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Input Capacitance (Ciss) (Max) @ Vds Gate Charge (Qg) (Max) @ Vgs Current - Continuous Drain (Id) @ 25°C Drain to Source Voltage (Vdss) Transistor Type Transition Frequency Drive Voltage (Max Rds On,Min Rds On) Vgs (Max) Current - Collector Cutoff (Max) Voltage - Collector Emitter Breakdown (Max) Current - Collector (Ic) (Max) Current - Peak Current - Valley (Iv) Inter-base Voltage-Max Intrinsic Stand-off Ratio-Max Intrinsic Stand-off Ratio-Min Static Inter-base Res-Max Static Inter-base Res-Min Valley Point Current-Min Peak Point Current-Max Emitter Current-Max Reference Voltage Voltage Tol-Max Working Test Current Dynamic Impedance-Max Voltage - Off State Current - On State (It (RMS)) (Max) Voltage - Peak Reverse (Max) Impedance-Max Voltage - Zener (Nom) (Vz) Repetitive Peak Reverse Voltage Voltage - Gate Trigger (Vgt) (Max) Current - Non Rep. Surge 50, 60Hz (Itsm) Current - Gate Trigger (Igt) (Max) SCR Type Voltage - On State (Vtm) (Max) Current - Off State (Max) DC Current Gain (hFE) (Min) @ Ic, Vce Vce Saturation (Max) @ Ib, Ic Frequency - Transition
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