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Discrete Semiconductors

discrete semiconductor.jpg
Discrete Semiconductor refer to electronic components that are individual and separate from each other, as opposed to integrated circuits that contain multiple components on a single chip. These discrete components include diodes, transistors, thyristors, and other similar devices that perform specific functions in electronic circuits. They are commonly used in power supplies, amplifiers, and other electronic devices where precise control and regulation of electrical signals is required. Discrete Semiconductor Products are available in a variety of sizes, shapes, and specifications to meet the needs of different applications. They are widely used in the electronics industry and are essential components in many electronic devices.
Compare Image Name Manufacturer Pricing(USD) Quantity Weight(Kg) Size(LxWxH) Datasheet Factory Lead Time Mount Packaging Published Pbfree Code Part Status Moisture Sensitivity Level (MSL) Number of Terminations Termination ECCN Code Max Operating Temperature Min Operating Temperature Operating Supply Voltage Diameter Length RoHS Status Lead Free Contact Plating Voltage - Rated Current Rating Radiation Hardening Number of Pins Additional Feature Package / Case REACH SVHC Frequency Height Width Resistance Voltage - Rated DC Operating Mode HTS Code JESD-609 Code Terminal Finish Terminal Position Terminal Form Peak Reflow Temperature (Cel) Time@Peak Reflow Temperature-Max (s) Pin Count Surface Mount JESD-30 Code Operating Temperature (Max) Operating Temperature (Min) Number of Channels Subcategory Qualification Status Gain Diode Element Material Number of Elements Configuration Diode Type Output Current-Max Application Number of Phases Rep Pk Reverse Voltage-Max JEDEC-95 Code Non-rep Pk Forward Current-Max Forward Current Case Connection Halogen Free Polarity/Channel Type On-State Current-Max Repetitive Peak Off-state Voltage Leakage Current (Max) Non-Repetitive Pk On-state Cur Holding Current-Max DC Gate Trigger Current-Max DC Gate Trigger Voltage-Max Max Surge Current Element Configuration Current - Output Power Dissipation Turn On Delay Time Max Dual Supply Voltage Drain to Source Resistance Peak Reverse Current Max Repetitive Reverse Voltage (Vrrm) Peak Non-Repetitive Surge Current Max Forward Surge Current (Ifsm) Reverse Current-Max Power Dissipation-Max Reverse Voltage Reverse Test Voltage Forward Voltage-Max Hold Current RMS Current (Irms) Continuous Drain Current (ID) Max Junction Temperature (Tj) Transistor Application Drain-source On Resistance-Max FET Technology Trigger Device Type Turn-Off Delay Time Transistor Element Material Rise Time Fall Time (Typ) Gate to Source Voltage (Vgs) Drain to Source Breakdown Voltage Dual Supply Voltage Nominal Vgs Drain Current-Max (Abs) (ID) Drain to Source Voltage (Vdss) Pulsed Drain Current-Max (IDM) Avalanche Energy Rating (Eas) Current - Test Voltage - Test Highest Frequency Band Power - Output Frequency (Max) Rds On Max Voltage - Threshold Capacitance - Input Channel Type RMS On-state Current-Max Desc. of Quick-Connects Desc. of Screw Terminals Automotive EU RoHS HTS Lead Shape Maximum Operating Temperature (°C) Minimum Operating Temperature (°C) Mounting Package Height PCB changed PPAP Standard Package Name Supplier Package ECCN (US) Category Maximum Power Dissipation (mW) Channel Mode Number of Elements per Chip Maximum Drain Source Voltage (V) Maximum Gate Source Voltage (V) Maximum Continuous Drain Current (A) Maximum Drain Source Resistance (mOhm) Typical Gate Charge @ Vgs (nC) Typical Input Capacitance @ Vds (pF) Typical Turn-Off Delay Time (ns) Typical Turn-On Delay Time (ns) Process Technology Typical Gate Charge @ 10V (nC) Typical Fall Time (ns) Typical Rise Time (ns)
PXAC201202FCV2R250XTMA1 PXAC201202FCV2R250XTMA1 Infineon 0.0000
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0.00000000 Surface Mount 1 (Unlimited) 3 EAR99 150°C -55°C 3.0226mm RoHS Compliant Lead Free No 3 HIGH RELIABILITY SOT-23 No SVHC 1.016mm 1.397mm ENHANCEMENT MODE 8541.21.00.95 e3 Matte Tin (Sn) DUAL GULL WING FET General Purpose Power 1 N-CHANNEL Single 540mW 3.9 ns 250mOhm 540mW 1.2A SWITCHING METAL-OXIDE SEMICONDUCTOR 9 ns 4ns 1.7 ns 20V 30V 1 V 30V 250 mΩ 85pF
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0.00000000 Screw 4 125°C -40°C RoHS Compliant Lead Free 630 Module 8541.30.00.80 UNSPECIFIED UNSPECIFIED NOT SPECIFIED NOT SPECIFIED 4 R-XXFM-X4 Silicon Controlled Rectifiers Not Qualified 1 SINGLE ISOLATED Not Halogen Free 2800V 200mA 25500 A 250mA 2V 1.5kA 2.8kV 23kA 2.8kV 500mA SCR 1500A G-GR A-K
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0.00000000 download yes 3 Through Hole 150°C -55°C 16.13mm RoHS Compliant Lead Free Tin No 3 TO-247-3 No SVHC 21.1mm 5.21mm ENHANCEMENT MODE 3 NO FET General Purpose Power 1 N-CHANNEL Single 417W 70 ns 120mOhm 417W 36A SWITCHING METAL-OXIDE SEMICONDUCTOR 400 ns 20ns 24 ns 20V 900V 900V 3 V 900V 96A 120 mΩ 3V 6.8nF
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