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Discrete Semiconductors

discrete semiconductor.jpg
Discrete Semiconductor refer to electronic components that are individual and separate from each other, as opposed to integrated circuits that contain multiple components on a single chip. These discrete components include diodes, transistors, thyristors, and other similar devices that perform specific functions in electronic circuits. They are commonly used in power supplies, amplifiers, and other electronic devices where precise control and regulation of electrical signals is required. Discrete Semiconductor Products are available in a variety of sizes, shapes, and specifications to meet the needs of different applications. They are widely used in the electronics industry and are essential components in many electronic devices.
Compare Image Name Manufacturer Pricing(USD) Quantity Weight(Kg) Size(LxWxH) Datasheet Factory Lead Time Packaging Series Part Status Moisture Sensitivity Level (MSL) RoHS Status Package / Case Mounting Type Operating Temperature Technology Current Type Power - Max Voltage Configuration Diode Type Supplier Device Package Input Speed Current - Reverse Leakage @ Vr Voltage - Forward (Vf) (Max) @ If Operating Temperature - Junction Diode Configuration Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Reverse Recovery Time Power Dissipation-Max Capacitance @ Vr, F FET Type Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Input Capacitance (Ciss) (Max) @ Vds Gate Charge (Qg) (Max) @ Vgs Current - Continuous Drain (Id) @ 25°C Drain to Source Voltage (Vdss) Drive Voltage (Max Rds On,Min Rds On) Vgs (Max) Current - Collector Cutoff (Max) Vce(on) (Max) @ Vge, Ic IGBT Type NTC Thermistor Input Capacitance (Cies) @ Vce Voltage - Collector Emitter Breakdown (Max) Current - Collector (Ic) (Max) Voltage - Isolation
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  • GP2D020A120U
    GP2D020A120U SemiQ

    Silicon Carbide Schottky Rectifier Diode 1 Pair Common Cathode No Recovery Time > 500mA (Io) -55°C~175°C TO-247-3 Through Hole

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  • GHIS040A060S-A1
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    IGBT MODULE 600V 80A 277W SOT227

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  • GSXF060A020S1-D3
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    GSXF060A020S1-D3 datasheet pdf and Diodes - Rectifiers - Arrays product details from SemiQ stock available at HK JDW

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  • GP2D008A065C
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  • GP2D008A120C
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    Silicon Carbide Schottky Diode Rectifier No Recovery Time > 500mA (Io) 1.8V @ 8A -50°C~175°C 20μA @ 1200V Tube TO-252-3, DPak (2 Leads + Tab), SC-63 Surface Mount

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  • GP2D030A120B
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    Silicon Carbide Schottky Diode Rectifier No Recovery Time > 500mA (Io) 1.8V @ 30A -55°C~175°C 60μA @ 1200V Tube TO-247-2 Through Hole

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  • GP2D020A060B
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    Silicon Carbide Schottky Diode Rectifier No Recovery Time > 500mA (Io) 1.65V @ 20A -50°C~175°C 70μA @ 600V Tube TO-247-2 Through Hole

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  • GSXD050A015S1-D3
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  • GHXS060A120S-D3
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    GHXS060A120S-D3 datasheet pdf and Diodes - Rectifiers - Arrays product details from SemiQ stock available at HK JDW

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  • GP2D010A170B
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    Silicon Carbide Schottky Diode Rectifier No Recovery Time > 500mA (Io) 1.75V @ 10A -55°C~175°C 20μA @ 1700V Tube TO-247-2 Through Hole

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  • GSXD060A008S1-D3
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  • GP2D010A065C
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    Silicon Carbide Schottky Diode Rectifier No Recovery Time > 500mA (Io) 1.65V @ 10A -55°C~175°C 100μA @ 650V Tape & Reel (TR) TO-252-3, DPak (2 Leads + Tab), SC-63 Surface Mount

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  • GHIS040A060S-A2
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    IGBT MODULE 600V 80A 277W SOT227

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  • GP2M008A060CG
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    MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 1.2Ohm @ 3.75A, 10V ±30V 1063pF @ 25V 23nC @ 10V 600V TO-252-3, DPak (2 Leads + Tab), SC-63

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  • GP1M011A050HS
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    MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 700mOhm @ 5A, 10V ±30V 1546pF @ 25V 28nC @ 10V 500V TO-220-3

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  • GP1M005A050FH
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    MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 1.65Ohm @ 2.25A, 10V ±30V 627pF @ 25V 11nC @ 10V 500V TO-220-3 Full Pack

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    MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 1.2Ohm @ 3.75A, 10V ±30V 1063pF @ 25V 23nC @ 10V 600V TO-220-3

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  • GP1M009A090N
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    MOSFET (Metal Oxide) N-Channel Tube 1.4Ohm @ 4.75A, 10V ±30V 2324pF @ 25V 65nC @ 10V 900V TO-3P-3, SC-65-3

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    MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 1.2Ohm @ 3.75A, 10V ±30V 1063pF @ 25V 23nC @ 10V 600V TO-220-3 Full Pack

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  • GP2M005A050HG
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    MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 1.5Ohm @ 2.25A, 10V ±30V 645pF @ 25V 15nC @ 10V 500V TO-220-3

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  • GP2D012A065A
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    Silicon Carbide Schottky Diode Rectifier No Recovery Time > 500mA (Io) 1.65V @ 12A -55°C~175°C 120μA @ 650V Tube TO-220-2 Through Hole

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  • GP1M016A025HG
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    MOSFET (Metal Oxide) N-Channel Tube 240mOhm @ 8A, 10V ±30V 944pF @ 25V 19nC @ 10V 250V TO-220-3

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  • GP2D010A120C
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    Silicon Carbide Schottky Diode Rectifier No Recovery Time > 500mA (Io) 1.8V @ 10A -55°C~175°C 20μA @ 1200V Tube TO-252-3, DPak (2 Leads + Tab), SC-63 Surface Mount

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  • GHIS025A120T1P2
    GHIS025A120T1P2 SemiQ

    SI IGBT & SIC SBD HYBRID MODULES

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    SIC MOSFET/SBD HALF BRIDGE MODUL

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    GHIS030A060B1P2 SemiQ

    SI IGBT & SIC SBD HYBRID MODULES

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