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Discrete Semiconductors

discrete semiconductor.jpg
Discrete Semiconductor refer to electronic components that are individual and separate from each other, as opposed to integrated circuits that contain multiple components on a single chip. These discrete components include diodes, transistors, thyristors, and other similar devices that perform specific functions in electronic circuits. They are commonly used in power supplies, amplifiers, and other electronic devices where precise control and regulation of electrical signals is required. Discrete Semiconductor Products are available in a variety of sizes, shapes, and specifications to meet the needs of different applications. They are widely used in the electronics industry and are essential components in many electronic devices.
Compare Image Name Manufacturer Pricing(USD) Quantity Weight(Kg) Size(LxWxH) Datasheet Factory Lead Time Packaging Series Part Status Moisture Sensitivity Level (MSL) RoHS Status Package / Case Mounting Type Operating Temperature Technology Input Type Current Type Power - Max Voltage Configuration Diode Type Supplier Device Package Input Speed Current - Reverse Leakage @ Vr Voltage - Forward (Vf) (Max) @ If Operating Temperature - Junction Diode Configuration Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Reverse Recovery Time Power Dissipation-Max Capacitance @ Vr, F FET Type Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Input Capacitance (Ciss) (Max) @ Vds Gate Charge (Qg) (Max) @ Vgs Current - Continuous Drain (Id) @ 25°C Drain to Source Voltage (Vdss) Drive Voltage (Max Rds On,Min Rds On) Vgs (Max) Current - Collector Cutoff (Max) Vce(on) (Max) @ Vge, Ic IGBT Type NTC Thermistor Input Capacitance (Cies) @ Vce Voltage - Collector Emitter Breakdown (Max) Current - Collector (Ic) (Max) Test Condition Gate Charge Current - Collector Pulsed (Icm) Td (on/off) @ 25°C Switching Energy Voltage - Isolation
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0.00000000 download Tube Amp+™ Obsolete 1 (Unlimited) ROHS3 Compliant TO-220-2 Through Hole Silicon Carbide Schottky TO-220-2 No Recovery Time > 500mA (Io) 30μA @ 650V 1.65V @ 3A -55°C~175°C 650V 3A DC 0ns 158pF @ 1V 1MHz
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    MOSFET (Metal Oxide) N-Channel Tube 300mOhm @ 9A, 10V ±30V 2880pF @ 25V 44nC @ 10V 500V TO-220-3

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    Silicon Carbide Schottky Rectifier Diode 1 Pair Common Cathode No Recovery Time > 500mA (Io) -55°C~175°C TO-247-3 Through Hole

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    MOSFET (Metal Oxide) N-Channel Tube 1.05Ohm @ 4.75A, 10V ±30V 2336pF @ 25V 53nC @ 10V 800V TO-220-3 Full Pack

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    Silicon Carbide Schottky Diode Rectifier No Recovery Time > 500mA (Io) 1.45V @ 30A 9μA @ 650V TO-220-2 Through Hole

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  • GHIS050A120T1P2
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    SI IGBT & SIC SBD HYBRID MODULES

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  • GHXS030A120S-D4
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    MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 2.5Ohm @ 2A, 10V ±30V 545pF @ 25V 12nC @ 10V 600V TO-220-3 Full Pack

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    SI IGBT & SIC SBD HYBRID MODULES

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    GHXS050A170S-D3 datasheet pdf and Diodes - Rectifiers - Arrays product details from SemiQ stock available at HK JDW

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    SI IGBT & SIC SBD HYBRID MODULES

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    Silicon Carbide Schottky Rectifier Diode 1 Pair Common Cathode No Recovery Time > 500mA (Io) -55°C~175°C TO-247-3 Through Hole

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