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Discrete Semiconductors

discrete semiconductor.jpg
Discrete Semiconductor refer to electronic components that are individual and separate from each other, as opposed to integrated circuits that contain multiple components on a single chip. These discrete components include diodes, transistors, thyristors, and other similar devices that perform specific functions in electronic circuits. They are commonly used in power supplies, amplifiers, and other electronic devices where precise control and regulation of electrical signals is required. Discrete Semiconductor Products are available in a variety of sizes, shapes, and specifications to meet the needs of different applications. They are widely used in the electronics industry and are essential components in many electronic devices.
Compare Image Name Manufacturer Pricing(USD) Quantity Weight(Kg) Size(LxWxH) Datasheet Factory Lead Time Mount Packaging Published Pbfree Code Part Status Moisture Sensitivity Level (MSL) Number of Terminations ECCN Code RoHS Status Lead Free Number of Pins Additional Feature Package / Case Reach Compliance Code Mounting Type Operating Temperature Technology Input Type HTS Code JESD-609 Code Terminal Position Terminal Form Peak Reflow Temperature (Cel) Time@Peak Reflow Temperature-Max (s) Pin Count Surface Mount JESD-30 Code Operating Temperature (Max) Subcategory Qualification Status Max Power Dissipation Power - Max Diode Element Material Number of Elements Configuration Diode Type Output Current-Max Number of Phases Rep Pk Reverse Voltage-Max JEDEC-95 Code Non-rep Pk Forward Current-Max Case Connection Polarity/Channel Type Power Dissipation-Max (Abs) Repetitive Peak Off-state Voltage Speed Current - Reverse Leakage @ Vr Voltage - Forward (Vf) (Max) @ If Operating Temperature - Junction Max Reverse Voltage (DC) Average Rectified Current Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Reverse Recovery Time Power Dissipation-Max Max Collector Current Collector Emitter Breakdown Voltage Collector Emitter Voltage (VCEO) RMS Current (Irms) Continuous Drain Current (ID) Transistor Application Trigger Device Type Transistor Element Material FET Type Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Input Capacitance (Ciss) (Max) @ Vds Gate Charge (Qg) (Max) @ Vgs Current - Continuous Drain (Id) @ 25°C Drain to Source Voltage (Vdss) Transistor Type Transition Frequency Drive Voltage (Max Rds On,Min Rds On) Vgs (Max) Current - Collector Cutoff (Max) Voltage - Collector Emitter Breakdown (Max) Current - Collector (Ic) (Max) Voltage - Off State Voltage - Gate Trigger (Vgt) (Max) Current - Non Rep. Surge 50, 60Hz (Itsm) Current - Gate Trigger (Igt) (Max) RMS On-state Current-Max Triac Type DC Current Gain (hFE) (Min) @ Ic, Vce Vce Saturation (Max) @ Ib, Ic Frequency - Transition
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0.00000000 download 12 Weeks Through Hole Tape & Reel (TR) 2013 Active 1 (Unlimited) 2 EAR99 RoHS Compliant Axial Through Hole 8541.10.00.70 WIRE O-PALF-W2 Not Qualified SILICON 1 SINGLE Standard 0.5A ISOLATED Fast Recovery =< 500ns, > 200mA (Io) 10μA @ 600V 1.7V @ 500mA -40°C~150°C 600V 500mA 600V 400 ns
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0.00000000 download 12 Weeks Through Hole Tape & Box (TB) 2013 Active 1 (Unlimited) RoHS Compliant Axial Through Hole Standard Standard Recovery >500ns, > 200mA (Io) 10μA @ 600V 1.5V @ 600mA -40°C~150°C 600V 600mA 600V 1.5 μs
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0.00000000 download 12 Weeks Tape & Box (TB) 2013 Active 1 (Unlimited) 2 EAR99 RoHS Compliant Axial Through Hole 8541.10.00.80 WIRE NO O-PALF-W2 150°C Not Qualified SILICON 1 SINGLE Standard 1A ISOLATED Fast Recovery =< 500ns, > 200mA (Io) 10μA @ 600V 1.5V @ 1A -40°C~150°C 600V 1A 400ns
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0.00000000 download 12 Weeks Through Hole Tape & Reel (TR) 2013 Active 1 (Unlimited) 2 EAR99 RoHS Compliant Axial Through Hole 8541.10.00.80 WIRE O-PALF-W2 150°C Not Qualified SILICON 1 SINGLE Standard 1A ISOLATED Standard Recovery >500ns, > 200mA (Io) 10μA @ 400V 970mV @ 1A -40°C~150°C 400V 1A 400V
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0.00000000 download 12 Weeks Tape & Reel (TR) 2013 Active 1 (Unlimited) 2 EAR99 RoHS Compliant Axial Through Hole 8541.10.00.80 WIRE NO O-PALF-W2 Not Qualified SILICON 1 SINGLE Standard 1A ISOLATED Standard Recovery >500ns, > 200mA (Io) 10μA @ 600V 970mV @ 1A -40°C~150°C 600V 1A
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0.00000000 download 12 Weeks Through Hole Tube 2010 Active 1 (Unlimited) RoHS Compliant Lead Free 12-SIP unknown Through Hole 150°C TJ Standard NOT SPECIFIED NOT SPECIFIED 30A 600V 30A
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0.00000000 download 12 Weeks Through Hole Bulk 2009 yes Active 1 (Unlimited) 3 RoHS Compliant Lead Free TO-220-3 Full Pack unknown Through Hole -40°C~125°C TJ 8541.30.00.80 NOT SPECIFIED NOT SPECIFIED 3 R-PSFM-T3 Not Qualified 1 Single TO-220AB ISOLATED 400V 3A TRIAC 400V 1.5V 30A 32A 20mA 3A Standard
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0.00000000 download 12 Weeks Surface Mount Tape & Reel (TR) 2011 Active 1 (Unlimited) RoHS Compliant 2-SMD, J-Lead Surface Mount Standard Fast Recovery =< 500ns, > 200mA (Io) 10μA @ 600V 1.5V @ 2A -40°C~150°C 600V 2A 600V 30 ns
EM01 EM01 Sanken 0.2064
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0.00000000 download 12 Weeks Through Hole Bulk yes Active 1 (Unlimited) 2 EAR99 RoHS Compliant Axial Through Hole 8541.10.00.80 e0 WIRE NOT SPECIFIED NOT SPECIFIED 2 O-XALF-W2 150°C Rectifier Diodes Not Qualified SILICON 1 SINGLE Standard 1A 45A ISOLATED Standard Recovery >500ns, > 200mA (Io) 10μA @ 400V 970mV @ 1A -40°C~150°C 400V 1A 400V
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    MOSFET (Metal Oxide) N-Channel Cut Tape (CT) 30m Ω @ 14.2A, 10V ±20V 2540pF @ 25V 35.8nC @ 10V 100V TO-252-3, DPak (2 Leads + Tab), SC-63

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    Standard Diode Rectifier Fast Recovery =< 500ns, > 200mA (Io) 2.5V @ 250mA -40°C~150°C 10μA @ 400V 2-Termination Tape & Box (TB) Axial Through Hole

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    Schottky Diode Rectifier Fast Recovery =< 500ns, > 200mA (Io) 700mV @ 3A -40°C~150°C 300μA @ 60V Tape & Reel (TR) 2-SMD, J-Lead Surface Mount

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    Standard Diode Rectifier Fast Recovery =< 500ns, > 200mA (Io) 980mV @ 1A -40°C~150°C 50μA @ 400V 2-Termination Tape & Box (TB) Axial Through Hole

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    MOSFET (Metal Oxide) N-Channel Tube 17.8m Ω @ 23.4A, 10V ±20V 3990pF @ 25V 55.8nC @ 10V 100V TO-220-3 Full Pack

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    Schottky Diode Rectifier Fast Recovery =< 500ns, > 200mA (Io) 550mV @ 1A -40°C~150°C 5mA @ 40V 2-Termination Tape & Box (TB) Axial Through Hole

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    Standard Diode Rectifier Standard Recovery >500ns, > 200mA (Io) 1.5V @ 600mA -40°C~150°C 10μA @ 600V Tape & Box (TB) Axial Through Hole

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    2SD2561 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Sanken stock available at HK JDW

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    Schottky Diode Rectifier Fast Recovery =< 500ns, > 200mA (Io) 550mV @ 1A -40°C~150°C 5mA @ 40V Bulk Axial Through Hole

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    Standard Diode Rectifier Fast Recovery =< 500ns, > 200mA (Io) 1.5V @ 1A -40°C~150°C 10μA @ 600V 2-Termination Tape & Box (TB) Axial Through Hole

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    Standard Diode Rectifier Standard Recovery >500ns, > 200mA (Io) 970mV @ 1A -40°C~150°C 10μA @ 400V 2-Termination Tape & Reel (TR) Axial Through Hole

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    Standard Diode Rectifier Standard Recovery >500ns, > 200mA (Io) 970mV @ 1A -40°C~150°C 10μA @ 600V 2-Termination Tape & Reel (TR) Axial Through Hole

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    IGBT 600V 30A PFC

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  • TMA34S-L
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    TRIAC 400V 3A

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    Standard Diode Rectifier Fast Recovery =< 500ns, > 200mA (Io) 1.5V @ 2A -40°C~150°C 10μA @ 600V Tape & Reel (TR) 2-SMD, J-Lead Surface Mount

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    Standard Diode Rectifier Standard Recovery >500ns, > 200mA (Io) 970mV @ 1A -40°C~150°C 10μA @ 400V 2-Termination Bulk Axial Through Hole

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