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Discrete Semiconductors

discrete semiconductor.jpg
Discrete Semiconductor refer to electronic components that are individual and separate from each other, as opposed to integrated circuits that contain multiple components on a single chip. These discrete components include diodes, transistors, thyristors, and other similar devices that perform specific functions in electronic circuits. They are commonly used in power supplies, amplifiers, and other electronic devices where precise control and regulation of electrical signals is required. Discrete Semiconductor Products are available in a variety of sizes, shapes, and specifications to meet the needs of different applications. They are widely used in the electronics industry and are essential components in many electronic devices.
Compare Image Name Manufacturer Pricing(USD) Quantity Weight(Kg) Size(LxWxH) Datasheet Factory Lead Time Lifecycle Status Mount Packaging Series Pbfree Code Part Status Moisture Sensitivity Level (MSL) Number of Terminations Termination ECCN Code Max Operating Temperature Min Operating Temperature Length RoHS Status Lead Free Contact Plating Current Rating Radiation Hardening Number of Pins Additional Feature Package / Case REACH SVHC Reach Compliance Code Frequency Height Width Resistance Mounting Type Weight Operating Temperature Voltage - Rated DC Technology Operating Mode Input Type Manufacturer Package Identifier Capacitance HTS Code Number of Functions Max Current Rating Type JESD-609 Code Terminal Finish Terminal Position Terminal Form Peak Reflow Temperature (Cel) Supply Voltage Time@Peak Reflow Temperature-Max (s) Base Part Number Pin Count Surface Mount JESD-30 Code Number of Channels Subcategory Qualification Status Power Supplies Max Power Dissipation Power - Max Output Voltage Diode Element Material Number of Elements Configuration Diode Type Output Current-Max Application Number of Phases JEDEC-95 Code Polarity Forward Current Forward Voltage Case Connection Gain Bandwidth Product Polarity/Channel Type Leakage Current (Max) Critical Rate of Rise of Off-State Voltage-Min Max Surge Current Element Configuration Power Dissipation Turn On Delay Time Interface IC Type Driver Number of Bits Built-in Protections Max Reverse Leakage Current Threshold Voltage Output Current Flow Direction Drain to Source Resistance Max Breakdown Voltage Speed Current - Reverse Leakage @ Vr Voltage - Forward (Vf) (Max) @ If Operating Temperature - Junction Max Reverse Voltage (DC) Average Rectified Current Peak Reverse Current Max Repetitive Reverse Voltage (Vrrm) Peak Non-Repetitive Surge Current Diode Configuration Max Forward Surge Current (Ifsm) Current - Average Rectified (Io) Reverse Recovery Time Power Dissipation-Max Reverse Voltage Recovery Time Forward Voltage-Max Max Collector Current Collector Emitter Breakdown Voltage Hold Current Collector Emitter Voltage (VCEO) RMS Current (Irms) Continuous Drain Current (ID) Max Junction Temperature (Tj) Transistor Application Drain-source On Resistance-Max DS Breakdown Voltage-Min Trigger Device Type Turn-Off Delay Time Transistor Element Material FET Type Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Input Capacitance (Ciss) (Max) @ Vds Gate Charge (Qg) (Max) @ Vgs Rise Time Fall Time (Typ) Gate to Source Voltage (Vgs) Drain to Source Breakdown Voltage Dual Supply Voltage Nominal Vgs Drain Current-Max (Abs) (ID) Current - Continuous Drain (Id) @ 25°C Drain to Source Voltage (Vdss) Pulsed Drain Current-Max (IDM) Avalanche Energy Rating (Eas) Transistor Type Transition Frequency Drive Voltage (Max Rds On,Min Rds On) Vgs (Max) Current - Collector Cutoff (Max) Collector Emitter Saturation Voltage Turn On Time Vce(on) (Max) @ Vge, Ic Turn Off Time-Nom (toff) IGBT Type Gate-Emitter Voltage-Max VCEsat-Max Voltage - Collector Emitter Breakdown (Max) Continuous Collector Current Gate-Emitter Thr Voltage-Max Fall Time-Max (tf) Test Condition Gate Charge Current - Collector Pulsed (Icm) Td (on/off) @ 25°C Switching Energy Collector Base Voltage (VCBO) Emitter Base Voltage (VEBO) hFE Min Turn Off Time Voltage - Off State Voltage - Peak Reverse (Max) Voltage - Gate Trigger (Vgt) (Max) Current - Non Rep. Surge 50, 60Hz (Itsm) Current - Gate Trigger (Igt) (Max) SCR Type Voltage - On State (Vtm) (Max) Current - Off State (Max) Current - On State (It (AV)) (Max) DC Current Gain (hFE) (Min) @ Ic, Vce Vce Saturation (Max) @ Ib, Ic Collector-Base Capacitance-Max
STP22NS25Z STP22NS25Z STMicroelectronics 0.0000
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0.00000000 download Through Hole Tube MESH OVERLAY™ Obsolete 1 (Unlimited) 3 EAR99 ROHS3 Compliant Lead Free 22A 3 TO-220-3 No SVHC not_compliant 150mOhm Through Hole -55°C~150°C TJ 250V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) NOT SPECIFIED NOT SPECIFIED STP22N 3 FET General Purpose Power Not Qualified 1 TO-220AB Single 135W 3V 135W Tc 22A SWITCHING SILICON N-Channel 150m Ω @ 11A, 10V 4V @ 250μA 2400pF @ 25V 151nC @ 10V 30ns 78 ns 20V 250V 22A Tc 88A 10V ±20V
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0.00000000 download ACTIVE (Last Updated: 8 months ago) Surface Mount Tape & Reel (TR) Automotive, AEC-Q101, STripFET™ F6 Active 1 (Unlimited) EAR99 ROHS3 Compliant TO-252-3, DPak (2 Leads + Tab), SC-63 Surface Mount 175°C TJ MOSFET (Metal Oxide) NOT SPECIFIED NOT SPECIFIED STD15 35W Tc 10A P-Channel 160m Ω @ 5A, 10V 4V @ 250μA 340pF @ 48V 6.4nC @ 10V 10A Tc 60V 10V ±20V
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0.00000000 download 12 Weeks Tape & Reel (TR) MDmesh™ M6 Active 3 (168 Hours) ROHS3 Compliant 8-PowerVDFN Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) NOT SPECIFIED NOT SPECIFIED 189W Tc N-Channel 80m Ω @ 15.5A, 10V 4.75V @ 250μA 57nC @ 10V 31A Tc 600V 10V ±25V
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0.00000000 download Tube Obsolete 1 (Unlimited) 3 EAR99 ROHS3 Compliant Lead Free 6A TO-220-3 Full Pack, Formed Leads not_compliant 150°C TJ 1.5kV 7pF 8541.10.00.80 6A e3 Matte Tin (Sn) SINGLE THROUGH-HOLE NOT SPECIFIED NOT SPECIFIED DMV1500 3 NO R-PSFM-T3 Rectifier Diodes Not Qualified SILICON 2 SERIES CONNECTED, CENTER TAP, 2 ELEMENTS Standard - 1 Pair Series Connection 6A HIGH VOLTAGE VERY FAST RECOVERY 1 TO-220AB ISOLATED 50A 3μA 600V 400 ns 1V 1500V
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0.00000000 download Tube Obsolete RoHS Compliant Switching Diode 2 Single
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0.00000000 download 32 Weeks ACTIVE (Last Updated: 7 months ago) Through Hole Tube Active 1 (Unlimited) EAR99 ROHS3 Compliant TO-247-3 Through Hole 38.000013g -55°C~175°C TJ Standard NOT SPECIFIED NOT SPECIFIED STGW15 Insulated Gate BIP Transistors 259W 259W N-CHANNEL Single 231 ns 30A 1.2kV 1.2kV 2.1V 2.6V @ 15V, 15A Trench Field Stop 20V 1200V 7V 600V, 15A, 10 Ω, 15V 67nC 60A 23ns/111ns 380μJ (on), 370μJ (off)
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STPS30L30CG STPS30L30CG STMicroelectronics 0.0000
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0.00000000 download Surface Mount Tube Obsolete 1 (Unlimited) 2 EAR99 150°C -65°C ROHS3 Compliant Lead Free 30A 3 FREE WHEELING DIODE TO-263-3, D2Pak (2 Leads + Tab), TO-263AB not_compliant 4.83mm Surface Mount 30V D2Pak 8541.10.00.80 e3 Matte Tin (Sn) - annealed SINGLE GULL WING 245 30 STPS30L30 3 R-PSSO-G2 Rectifier Diodes Not Qualified SILICON 2 Schottky LOW POWER 1 15A 570mV 220A Common Cathode 1.5mA Fast Recovery =< 500ns, > 200mA (Io) 1.5mA @ 60V 460mV @ 15A 150°C Max 30V 15A 1.5mA 30V 220A 1 Pair Common Cathode 220A 150°C
STBV42G-AP STBV42G-AP STMicroelectronics 0.0000
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0.00000000 Through Hole Tape & Box (TB) yes Obsolete 1 (Unlimited) 3 EAR99 ROHS3 Compliant No 3 TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Through Hole 150°C TJ e3 Matte Tin (Sn) BOTTOM STBV42 3 Other Transistors 1W 1W 1 NPN Single 400V 1A 400V 400V SWITCHING SILICON NPN 1mA 9V 10 @ 400mA 5V 1.5V @ 250mA, 750mA
STP9NM60N STP9NM60N STMicroelectronics 0.0000
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0.00000000 download NRND (Last Updated: 7 months ago) Through Hole Tube MDmesh™ II Active 1 (Unlimited) 3 EAR99 10.4mm ROHS3 Compliant Lead Free No 3 TO-220-3 No SVHC 15.75mm 4.6mm Through Hole 150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) STP9N 3 FET General Purpose Power 1 TO-220AB Single 70W 28 ns 3V 70W Tc 6.5A SWITCHING 0.745Ohm 600V 52.5 ns SILICON N-Channel 745m Ω @ 3.25A, 10V 4V @ 250μA 452pF @ 50V 17.4nC @ 10V 23ns 26.7 ns 25V 9A 6.5A Tc 600V 26A 10V ±25V
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0.00000000 download 17 Weeks ACTIVE (Last Updated: 7 months ago) Surface Mount Tape & Reel (TR) MDmesh™ V Active 1 (Unlimited) 2 EAR99 10.4mm ROHS3 Compliant Lead Free No 3 TO-263-3, D2Pak (2 Leads + Tab), TO-263AB 4.6mm 9.35mm 340MOhm Surface Mount 150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - annealed GULL WING 245 30 STB15N R-PSSO-G2 FET General Purpose Power 1 DRAIN Single 85W 30 ns 85W Tc 11A SWITCHING 30 ns SILICON N-Channel 340m Ω @ 5.5A, 10V 5V @ 250μA 810pF @ 100V 22nC @ 10V 25V 650V 11A Tc 44A 10V ±25V
SCT10N120H SCT10N120H STMicroelectronics 0.0000
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0.00000000 Tape & Reel (TR) Active TO-247-3 Through Hole -55°C~200°C TJ SiCFET (Silicon Carbide) 150W Tc N-Channel 690m Ω @ 6A, 20V 3.5V @ 250μA 290pF @ 400V 22nC @ 20V 12A Tc 1200V 20V +25V, -10V
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0.00000000 download Through Hole Tube FDmesh™ II Obsolete 1 (Unlimited) 3 EAR99 10.4mm ROHS3 Compliant Lead Free No 3 TO-220-3 No SVHC 15.75mm 4.6mm 220mOhm Through Hole 150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - annealed STP21N 3 FET General Purpose Power 1 TO-220AB Single 140W 18 ns 4V 140W Tc 17A SWITCHING 70 ns SILICON N-Channel 220m Ω @ 8.5A, 10V 5V @ 250μA 1800pF @ 50V 60nC @ 10V 16ns 48 ns 25V 600V 17A Tc 68A 10V ±25V
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STPS41L60CG STPS41L60CG STMicroelectronics 0.0000
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0.00000000 download Surface Mount Tube Obsolete 1 (Unlimited) 2 EAR99 150°C -65°C ROHS3 Compliant Lead Free 40A 3 FREE WHEELING DIODE TO-263-3, D2Pak (2 Leads + Tab), TO-263AB not_compliant Surface Mount 60V 8541.10.00.80 e3 Matte Tin (Sn) SINGLE GULL WING 245 30 STPS41 3 R-PSSO-G2 Rectifier Diodes Not Qualified SILICON 2 Schottky POWER 1 770mV 220A Common Cathode 600μA Fast Recovery =< 500ns, > 200mA (Io) 600μA @ 60V 600mV @ 20A 150°C Max 60V 20A 220A 1 Pair Common Cathode
2N5657 2N5657 STMicroelectronics 0.0000
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0.00000000 download Through Hole Tube Obsolete 1 (Unlimited) 3 EAR99 Non-RoHS Compliant Contains Lead 500mA No 3 TO-225AA, TO-126-3 Through Hole 150°C TJ 375V 2N56 3 Other Transistors 20W 1 ISOLATED 10MHz NPN Single 500mA 350V 350V SWITCHING SILICON NPN 10MHz 100μA 10 V 375V 6V 30 30 @ 100mA 10V 10V @ 100mA, 500mA 25pF
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0.00000000 download Surface Mount Tape & Reel (TR) FDmesh™ II Obsolete 1 (Unlimited) 2 EAR99 10.75mm ROHS3 Compliant Lead Free No 3 TO-263-3, D2Pak (2 Leads + Tab), TO-263AB No SVHC 4.6mm 10.4mm 170mOhm Surface Mount 150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - annealed GULL WING 245 30 STB21N 4 R-PSSO-G2 FET General Purpose Power 1 Single 140W 18 ns 4V 140W Tc 17A SWITCHING 70 ns SILICON N-Channel 220m Ω @ 8.5A, 10V 5V @ 250μA 1800pF @ 50V 60nC @ 10V 16ns 48 ns 25V 600V 17A Tc 68A 10V ±25V
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ULN2069B ULN2069B STMicroelectronics 0.0000
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0.00000000 download 11 Weeks ACTIVE (Last Updated: 7 months ago) Through Hole Tube Active 1 (Unlimited) 3 EAR99 175°C -65°C 15.75mm ROHS3 Compliant 3 TO-247-3 No SVHC 20.15mm 5.15mm Through Hole SINGLE NOT SPECIFIED NOT SPECIFIED STTH10 SILICON 2 Standard HIGH VOLTAGE ULTRA FAST RECOVERY 1 100A 1.65V 360A Common Cathode 200μA Fast Recovery =< 500ns, > 200mA (Io) 20μA @ 600V 1.45V @ 50A 175°C Max 600V 50A 20μA 600V 360A 1 Pair Common Cathode 360A 75 ns 200 ns
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0.00000000 download Through Hole Tube PowerMESH™ Obsolete Not Applicable 3 Through Hole EAR99 ROHS3 Compliant Lead Free Tin No 3 TO-220-3 No SVHC Through Hole -55°C~150°C TJ Standard e3 STGP19 3 Insulated Gate BIP Transistors 125W 1 TO-220AB N-CHANNEL Single 125W 25 ns 31ns 40A 600V 600V POWER CONTROL 90 ns SILICON 7ns 2.5V 33 ns 2.5V @ 15V, 12A 204 ns 20V 5.75V 390V, 12A, 10 Ω, 15V 53nC 25ns/90ns 81μJ (on), 125μJ (off)
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