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Discrete Semiconductors

discrete semiconductor.jpg
Discrete Semiconductor refer to electronic components that are individual and separate from each other, as opposed to integrated circuits that contain multiple components on a single chip. These discrete components include diodes, transistors, thyristors, and other similar devices that perform specific functions in electronic circuits. They are commonly used in power supplies, amplifiers, and other electronic devices where precise control and regulation of electrical signals is required. Discrete Semiconductor Products are available in a variety of sizes, shapes, and specifications to meet the needs of different applications. They are widely used in the electronics industry and are essential components in many electronic devices.
Compare Image Name Manufacturer Pricing(USD) Quantity Weight(Kg) Size(LxWxH) Datasheet Factory Lead Time Lifecycle Status Mount Material Packaging Series Part Status Moisture Sensitivity Level (MSL) Number of Terminations Termination ECCN Code Max Operating Temperature Min Operating Temperature Length RoHS Status Lead Free Voltage - Rated Current Rating Radiation Hardening Number of Pins Additional Feature Package / Case REACH SVHC Reach Compliance Code Frequency Height Width Resistance Mounting Type Weight Operating Temperature Voltage - Rated DC Technology Operating Mode Input Type Manufacturer Package Identifier Capacitance HTS Code Type JESD-609 Code Terminal Finish Terminal Position Terminal Form Peak Reflow Temperature (Cel) Time@Peak Reflow Temperature-Max (s) Base Part Number Pin Count Surface Mount JESD-30 Code Operating Temperature (Max) Subcategory Qualification Status Gain Max Power Dissipation Power - Max Diode Element Material Number of Elements Configuration Diode Type Output Current-Max Application Number of Phases Rep Pk Reverse Voltage-Max JEDEC-95 Code Non-rep Pk Forward Current-Max Output Current Max Output Power Polarity Forward Current Forward Voltage Case Connection Polarity/Channel Type DC Current Gain-Min (hFE) Max Surge Current Element Configuration Power Dissipation Min Breakdown Voltage Turn On Delay Time Max Reverse Leakage Current Threshold Voltage Speed Current - Reverse Leakage @ Vr Voltage - Forward (Vf) (Max) @ If Operating Temperature - Junction Max Reverse Voltage (DC) Average Rectified Current Peak Reverse Current Max Repetitive Reverse Voltage (Vrrm) Peak Non-Repetitive Surge Current Diode Configuration Max Forward Surge Current (Ifsm) Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Reverse Current-Max Reverse Recovery Time Power Dissipation-Max Reverse Voltage Reverse Voltage (DC) Recovery Time Reverse Test Voltage Max Collector Current Collector Emitter Breakdown Voltage Collector Emitter Voltage (VCEO) Rise Time-Max Continuous Drain Current (ID) Capacitance @ Vr, F Max Junction Temperature (Tj) Transistor Application Drain-source On Resistance-Max FET Technology Turn-Off Delay Time Transistor Element Material FET Type Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Input Capacitance (Ciss) (Max) @ Vds Gate Charge (Qg) (Max) @ Vgs Rise Time Fall Time (Typ) Gate to Source Voltage (Vgs) Drain to Source Breakdown Voltage Nominal Vgs Drain Current-Max (Abs) (ID) Current - Continuous Drain (Id) @ 25°C Drain to Source Voltage (Vdss) Pulsed Drain Current-Max (IDM) Avalanche Energy Rating (Eas) Current - Test Transistor Type Voltage - Test Input Capacitance Power - Output Transition Frequency Power Gain Drive Voltage (Max Rds On,Min Rds On) Vgs (Max) Turn Off Time-Max (toff) Current - Collector Cutoff (Max) Collector Emitter Saturation Voltage Vce(on) (Max) @ Vge, Ic IGBT Type Gate-Emitter Voltage-Max VCEsat-Max Fall Time-Max (tf) Test Condition Gate Charge Current - Collector Pulsed (Icm) Td (on/off) @ 25°C Switching Energy Collector Base Voltage (VCBO) Emitter Base Voltage (VEBO) hFE Min DC Current Gain (hFE) (Min) @ Ic, Vce Vce Saturation (Max) @ Ib, Ic
STPSC12H065D STPSC12H065D STMicroelectronics 0.0000
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0.00000000 download 14 Weeks ACTIVE (Last Updated: 7 months ago) Through Hole Tube Active 1 (Unlimited) 2 EAR99 ROHS3 Compliant TO-220-2 Through Hole SINGLE NOT SPECIFIED NOT SPECIFIED STPSC12 R-PSFM-T2 175°C Rectifier Diodes 1 SINGLE Silicon Carbide Schottky POWER 1 TO-220AC 90A CATHODE Fast Recovery =< 500ns, > 200mA (Io) 120μA @ 650V 1.75V @ 12A -40°C~175°C 650V 12A 650V 120μA 600pF @ 0V 1MHz
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0.00000000 download ACTIVE (Last Updated: 8 months ago) Through Hole Bulk Obsolete 1 (Unlimited) 3 Through Hole EAR99 ROHS3 Compliant No 3 TO-226-3, TO-92-3 (TO-226AA) No SVHC Through Hole 150°C TJ BOTTOM STX616 3 Other Transistors 2.8W 1 NPN Single 2.8W 1.5A 500V 500V SWITCHING SILICON NPN 50μA 12V 4 12 @ 500mA 5V 1V @ 200mA, 1A
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0.00000000 download Surface Mount Cut Tape (CT) Obsolete 1 (Unlimited) 2 EAR99 150°C -65°C ROHS3 Compliant Lead Free No 3 TO-263-3, D2Pak (2 Leads + Tab), TO-263AB No SVHC Surface Mount 8541.10.00.80 SINGLE GULL WING STPS30 R-PSSO-G2 Rectifier Diodes SILICON 2 Schottky EFFICIENCY 1 30A 625mV Common Cathode Fast Recovery =< 500ns, > 200mA (Io) 65μA @ 60V 625mV @ 15A 150°C Max 60V 15A 65μA 60V 300A 1 Pair Common Cathode 300A
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0.00000000 download Chassis Mount, Panel, Screw Tube Obsolete Not Applicable 4 EAR99 38.2mm ROHS3 Compliant Lead Free 84A No 4 ISOTOP No SVHC 9.1mm 25.4mm Chassis Mount 4.535924g 150°C TJ 450V UPPER UNSPECIFIED ESM6045 4 BIP General Purpose Power 250W 1 NPN ISOLATED Single 250W 84A 450V 450V 5500ns SWITCHING SILICON NPN - Darlington 2V 2 V 500ns 7V 120 120 @ 70A 5V 1.35V @ 4A, 70A
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