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Discrete Semiconductors

discrete semiconductor.jpg
Discrete Semiconductor refer to electronic components that are individual and separate from each other, as opposed to integrated circuits that contain multiple components on a single chip. These discrete components include diodes, transistors, thyristors, and other similar devices that perform specific functions in electronic circuits. They are commonly used in power supplies, amplifiers, and other electronic devices where precise control and regulation of electrical signals is required. Discrete Semiconductor Products are available in a variety of sizes, shapes, and specifications to meet the needs of different applications. They are widely used in the electronics industry and are essential components in many electronic devices.
Compare Image Name Manufacturer Pricing(USD) Quantity Weight(Kg) Size(LxWxH) Factory Lead Time Moisture Sensitivity Level (MSL) ECCN Code RoHS Status Additional Feature Reach Compliance Code Operating Mode JESD-609 Code Terminal Finish Terminal Position Terminal Form Peak Reflow Temperature (Cel) Time@Peak Reflow Temperature-Max (s) Surface Mount JESD-30 Code Operating Temperature (Max) Subcategory Qualification Status Number of Elements Configuration JEDEC-95 Code Case Connection Polarity/Channel Type Power Dissipation-Max (Abs) Number of Terminals Transistor Application Drain-source On Resistance-Max DS Breakdown Voltage-Min FET Technology Transistor Element Material Drain Current-Max (Abs) (ID) Pulsed Drain Current-Max (IDM) Avalanche Energy Rating (Eas)
AUIRFSL8408 AUIRFSL8408 INFINEON TECHNOLOGIES AG 0.0000
RFQ

Min: 1

Mult: 1

0.00000000 1 (Unlimited) EAR99 RoHS Compliant compliant NOT SPECIFIED NOT SPECIFIED NO 175°C FET General Purpose Power Single N-CHANNEL 294W METAL-OXIDE SEMICONDUCTOR 195A
IRF1104LPBF IRF1104LPBF INFINEON TECHNOLOGIES AG 0.0000
RFQ

Min: 1

Mult: 1

0.00000000 [object Object] 1 (Unlimited) EAR99 RoHS Compliant AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE compliant ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier SINGLE THROUGH-HOLE 260 30 NO R-PSIP-T3 175°C FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE TO-262AA DRAIN N-CHANNEL 170W 3 SWITCHING 0.009Ohm 40V METAL-OXIDE SEMICONDUCTOR SILICON 100A 400A 350 mJ
IRFZ48VSPBF IRFZ48VSPBF INFINEON TECHNOLOGIES AG 0.0000
RFQ

Min: 1

Mult: 1

0.00000000 [object Object] 1 (Unlimited) EAR99 RoHS Compliant AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE compliant ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier SINGLE GULL WING 260 30 YES R-PSSO-G2 175°C FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN N-CHANNEL 150W 2 SWITCHING 0.012Ohm 60V METAL-OXIDE SEMICONDUCTOR SILICON 72A 290A 166 mJ
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