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Discrete Semiconductors

discrete semiconductor.jpg
Discrete Semiconductor refer to electronic components that are individual and separate from each other, as opposed to integrated circuits that contain multiple components on a single chip. These discrete components include diodes, transistors, thyristors, and other similar devices that perform specific functions in electronic circuits. They are commonly used in power supplies, amplifiers, and other electronic devices where precise control and regulation of electrical signals is required. Discrete Semiconductor Products are available in a variety of sizes, shapes, and specifications to meet the needs of different applications. They are widely used in the electronics industry and are essential components in many electronic devices.
Compare Image Name Manufacturer Pricing(USD) Quantity Weight(Kg) Size(LxWxH) Datasheet Factory Lead Time Mount Packaging Published Series Pbfree Code Part Status Moisture Sensitivity Level (MSL) Number of Terminations ECCN Code RoHS Status Lead Free Radiation Hardening Number of Pins Additional Feature Package / Case REACH SVHC Reach Compliance Code Resistance Mounting Type Operating Temperature Technology Operating Mode HTS Code JESD-609 Code Terminal Finish Terminal Position Terminal Form Peak Reflow Temperature (Cel) Time@Peak Reflow Temperature-Max (s) Base Part Number Pin Count Surface Mount JESD-30 Code Operating Temperature (Max) Subcategory Qualification Status Reference Standard Diode Element Material Number of Elements Configuration Diode Type Output Current-Max Application Number of Phases Rep Pk Reverse Voltage-Max JEDEC-95 Code Non-rep Pk Forward Current-Max Case Connection Element Configuration Power Dissipation Threshold Voltage Speed Current - Reverse Leakage @ Vr Voltage - Forward (Vf) (Max) @ If Operating Temperature - Junction Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Reverse Current-Max Reverse Recovery Time Power Dissipation-Max Continuous Drain Current (ID) Capacitance @ Vr, F Transistor Application Drain-source On Resistance-Max DS Breakdown Voltage-Min Turn-Off Delay Time Transistor Element Material FET Type Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Input Capacitance (Ciss) (Max) @ Vds Gate Charge (Qg) (Max) @ Vgs Rise Time Fall Time (Typ) Gate to Source Voltage (Vgs) Drain to Source Breakdown Voltage FET Feature Nominal Vgs Drain Current-Max (Abs) (ID) Current - Continuous Drain (Id) @ 25°C Drain to Source Voltage (Vdss) Pulsed Drain Current-Max (IDM) Avalanche Energy Rating (Eas) Drive Voltage (Max Rds On,Min Rds On) Vgs (Max)
IXTP64N055T IXTP64N055T IXYS 0.0000
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0.00000000 download Through Hole Tube 2006 TrenchMV™ yes Obsolete 1 (Unlimited) 3 EAR99 RoHS Compliant AVALANCHE RATED TO-220-3 Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) NOT SPECIFIED NOT SPECIFIED 3 R-PSFM-T3 Not Qualified 1 TO-220AB DRAIN Single 130W 130W Tc 64A SWITCHING 0.013Ohm 37 ns SILICON N-Channel 13m Ω @ 500mA, 10V 4V @ 25μA 1420pF @ 25V 37nC @ 10V 52ns 30 ns 55V 64A Tc 170A 250 mJ 10V ±20V
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0.00000000 19 Weeks Active TO-263-3, D2Pak (2 Leads + Tab), TO-263AB compliant Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) 290W Tc N-Channel 200m Ω @ 9A, 10V 5V @ 1.5mA 1520pF @ 25V 29nC @ 10V 18A Tc 650V 10V ±30V
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0.00000000 download Through Hole Tube 2009 CoolMOS™ yes Obsolete 1 (Unlimited) 3 RoHS Compliant AVALANCHE RATED, UL RECOGNIZED TO-220-3 Full Pack, Isolated Tab Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE NOT SPECIFIED NOT SPECIFIED 3 R-PSFM-T3 FET General Purpose Power Not Qualified 1 TO-220AB Single 31W 5.4A SWITCHING 0.385Ohm SILICON N-Channel 385m Ω @ 5.2A, 10V 3.5V @ 340μA 790pF @ 100V 22nC @ 10V 20V 600V Super Junction 5.4A Tc 225 mJ 10V ±20V
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0.00000000 download 19 Weeks Through Hole Tube 2015 HiPerFET™ Active 1 (Unlimited) ROHS3 Compliant TO-3P-3, SC-65-3 Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) 500W Tc 30A N-Channel 155m Ω @ 15A, 10V 4.5V @ 4mA 2270pF @ 25V 56nC @ 10V 30A Tc 600V 10V ±30V
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0.00000000 download 19 Weeks Tube HiPerFET™ Active 1 (Unlimited) 3 ROHS3 Compliant AVALANCHE RATED TO-220-3 Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE SINGLE NO R-PSFM-T3 1 SINGLE WITH BUILT-IN DIODE TO-220AB DRAIN 176W Tc SWITCHING 0.045Ohm 200V SILICON N-Channel 45m Ω @ 18A, 10V 4.5V @ 500μA 1425pF @ 25V 21nC @ 10V 36A 36A Tc 200V 50A 300 mJ 10V ±20V
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0.00000000 Through Hole Tube Active 1 (Unlimited) ROHS3 Compliant TO-220-3, Short Tab Through Hole MOSFET (Metal Oxide) 98A N-Channel 98A Tc 200V
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0.00000000 23 Weeks Active
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0.00000000 28 Weeks Tube Active 2 EAR99 LOW LEAKAGE CURRENT TO-262-2, I2Pak Through Hole 8541.10.00.80 SINGLE NOT SPECIFIED NOT SPECIFIED 2 NO R-PSIP-T2 175°C Rectifier Diodes SILICON 1 SINGLE Standard 30A HIGH VOLTAGE 1 2200V 340A ANODE Standard Recovery >500ns, > 200mA (Io) 40μA @ 2200V 1.26V @ 30A -55°C~175°C 2200V 30A 40μA 210W 7pF @ 700V 1MHz
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0.00000000 download 28 Weeks Chassis Mount Tube 2009 Linear L2™ yes Active 1 (Unlimited) 4 EAR99 ROHS3 Compliant Lead Free 4 UL RECOGNIZED SOT-227-4, miniBLOC No SVHC Chassis Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE Nickel (Ni) UPPER UNSPECIFIED NOT SPECIFIED NOT SPECIFIED 4 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE ISOLATED 735W 2.5V 735W Tc 53A SWITCHING 0.1Ohm 500V SILICON N-Channel 100m Ω @ 30A, 10V 4.5V @ 250μA 24000pF @ 25V 610nC @ 10V 2.5 V 30A 53A Tc 500V 150A 3000 mJ 10V ±30V
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0.00000000 download Through Hole Tube 2009 CoolMOS™ yes Active 1 (Unlimited) 3 ROHS3 Compliant TO-220-3 Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE NOT SPECIFIED NOT SPECIFIED 3 R-PSFM-T3 FET General Purpose Power Not Qualified 1 TO-220AB DRAIN Single 130W 13A SWITCHING 0.3Ohm SILICON N-Channel 300m Ω @ 6.6A, 10V 3.5V @ 440μA 1100pF @ 100V 30nC @ 10V 20V 600V Super Junction 13A Tc 290 mJ 10V ±20V
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0.00000000 download Surface Mount Bulk 2006 PolarHT™ HiPerFET™ yes Obsolete 1 (Unlimited) 2 EAR99 RoHS Compliant 3 AVALANCHE ENERGY RATED PLUS-220SMD Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE GULL WING NOT SPECIFIED NOT SPECIFIED 3 R-PSSO-G2 Not Qualified 1 DRAIN Single 480W 480W Tc 96A SWITCHING 0.024Ohm 66 ns SILICON N-Channel 24m Ω @ 500mA, 10V 5V @ 4mA 3500pF @ 25V 110nC @ 10V 33ns 18 ns 20V 150V 96A Tc 250A 1000 mJ 10V ±20V
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0.00000000 download Chassis Mount Tube 2000 HiPerFET™ yes Obsolete 1 (Unlimited) 4 RoHS Compliant 4 SOT-227-4, miniBLOC Chassis Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE Nickel (Ni) UPPER UNSPECIFIED NOT SPECIFIED NOT SPECIFIED 4 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE ISOLATED 700W 700W Tc 80A SWITCHING 102 ns SILICON N-Channel 45m Ω @ 500mA, 10V 4V @ 8mA 9890pF @ 25V 380nC @ 10V 70ns 27 ns 20V 480V 80A Tc 320A 6000 mJ 10V ±20V
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0.00000000 download Surface Mount Tube 2011 HiPerFET™, PolarP2™ yes Obsolete 1 (Unlimited) 2 RoHS Compliant AVALANCHE RATED PLUS-220SMD Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE GULL WING NOT SPECIFIED NOT SPECIFIED 3 R-PSSO-G2 FET General Purpose Power Not Qualified 1 DRAIN Single 540W 540W Tc 18A SWITCHING 0.6Ohm SILICON N-Channel 600m Ω @ 500mA, 10V 6.5V @ 1mA 5230pF @ 25V 97nC @ 10V 30V 900V 18A Tc 36A 800 mJ 10V ±30V
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0.00000000 download Through Hole Tube 2004 yes Active 1 (Unlimited) 3 ROHS3 Compliant 3 AVALANCHE RATED TO-3P-3, SC-65-3 Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) NOT SPECIFIED NOT SPECIFIED 3 Not Qualified 1 DRAIN Single 500W 500W Tc 40A SWITCHING 0.16Ohm 56 ns SILICON N-Channel 160m Ω @ 500mA, 10V 4.5V @ 4mA 4500pF @ 25V 130nC @ 10V 20ns 14 ns 30V 500V 40A Tc 160A 2 mJ 10V ±30V
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0.00000000 download 26 Weeks Through Hole Tube 2009 GigaMOS™, HiPerFET™, TrenchT2™ yes Active 1 (Unlimited) 3 EAR99 ROHS3 Compliant AVALANCHE RATED TO-220-3 Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE SINGLE NOT SPECIFIED NOT SPECIFIED 3 R-PSFM-T3 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE TO-220AB DRAIN 360W Tc 130A SWITCHING 0.0091Ohm 100V SILICON N-Channel 9.1m Ω @ 65A, 10V 4.5V @ 1mA 6600pF @ 25V 130nC @ 10V 130A Tc 100V 300A 800 mJ 10V ±20V
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0.00000000 download 20 Weeks Tape & Reel (TR) HiPerFRED™ Active 3 (168 Hours) 2 ROHS3 Compliant FREE WHEELING DIODE, LOW LEAKAGE CURRENT,PD-CASE, SNUBBER DIODE TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Surface Mount AVALANCHE SINGLE GULL WING DSEP40-03 YES R-PSSO-G2 150°C IEC-60747 SILICON 1 SINGLE Standard 40A FAST SOFT RECOVERY 1 300V 340A CATHODE Fast Recovery =< 500ns, > 200mA (Io) 1μA @ 300V 1.44V @ 40A -55°C~175°C 300V 40A 5μA 35ns 175W 50pF @ 150V 1MHz
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0.00000000 download Through Hole Tube 2006 TrenchMV™ yes Obsolete 1 (Unlimited) 3 EAR99 RoHS Compliant TO-220-3 Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) NOT SPECIFIED NOT SPECIFIED 3 R-PSFM-T3 Not Qualified 1 TO-220AB DRAIN Single 130W 130W Tc 50A SWITCHING 0.023Ohm 38 ns SILICON N-Channel 23m Ω @ 25A, 10V 4V @ 25μA 1460pF @ 25V 34nC @ 10V 32ns 33 ns 85V 50A Tc 130A 250 mJ 10V ±20V
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0.00000000 download 8 Weeks Through Hole Tube 2003 HiPerFET™ yes Not For New Designs 1 (Unlimited) 3 ROHS3 Compliant No 3 AVALANCHE RATED TO-247-3 Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e1 Tin/Silver/Copper (Sn/Ag/Cu) 3 FET General Purpose Power 1 DRAIN Single 180W 180W Tc 6A SWITCHING 2Ohm 22 ns SILICON N-Channel 1.9 Ω @ 3A, 10V 4.5V @ 2.5mA 2200pF @ 25V 48nC @ 10V 15ns 12 ns 20V 1kV 6A 6A Tc 1000V 24A 700 mJ 10V ±20V
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0.00000000 download Through Hole Tube 2006 TrenchMV™ yes Obsolete 1 (Unlimited) 3 EAR99 RoHS Compliant 3 AVALANCHE RATED ISOPLUS220™ Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e1 Tin/Silver/Copper (Sn/Ag/Cu) NOT SPECIFIED NOT SPECIFIED 3 Not Qualified 1 ISOLATED Single 150W 150W Tc 115A SWITCHING 0.005Ohm 55 ns SILICON N-Channel 5m Ω @ 25A, 10V 4V @ 250μA 7700pF @ 25V 165nC @ 10V 65ns 47 ns 75V 115A Tc 600A 1000 mJ 10V ±20V
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0.00000000 download 24 Weeks Surface Mount Tube 2006 yes Active 1 (Unlimited) 2 ROHS3 Compliant Lead Free No TO-268-3, D3Pak (2 Leads + Tab), TO-268AA 330mOhm Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) e3 Matte Tin (Sn) GULL WING 4 R-PSSO-G2 FET General Purpose Power 1 DRAIN Single 400W 400W Tc 20A SWITCHING 110 ns SILICON N-Channel 330m Ω @ 10A, 10V 3.5V @ 250mA 2500pF @ 25V 125nC @ 10V 85ns 75 ns 30V 500V Depletion Mode 20A Tc 50A 10V ±30V
IXTP10P50P IXTP10P50P IXYS 0.0000
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0.00000000 download 17 Weeks Through Hole Tube 2009 PolarP™ yes Active 1 (Unlimited) 3 ROHS3 Compliant Lead Free No AVALANCHE RATED TO-220-3 1Ohm Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) 3 R-PSFM-T3 Other Transistors 1 TO-220AB DRAIN Single 300W 300W Tc 10A SWITCHING 52 ns SILICON P-Channel 1 Ω @ 5A, 10V 4V @ 250μA 2840pF @ 25V 50nC @ 10V 28ns 44 ns 20V -500V 10A Tc 500V 30A 10V ±20V
IXTA80N10T IXTA80N10T IXYS 0.0000
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0.00000000 download 28 Weeks Surface Mount Tube 2009 TrenchMV™ yes Active 1 (Unlimited) 2 EAR99 ROHS3 Compliant Lead Free No AVALANCHE RATED TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) GULL WING 4 R-PSSO-G2 FET General Purpose Power 1 DRAIN Single 230W 230W Tc 80A SWITCHING 40 ns SILICON N-Channel 14m Ω @ 25A, 10V 5V @ 100μA 3040pF @ 25V 60nC @ 10V 54ns 48 ns 20V 100V 80A Tc 220A 400 mJ 10V ±20V
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0.00000000 28 Weeks Active TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) 63W Tc N-Channel 11.8 Ω @ 700mA, 10V 4.5V @ 50μA 450pF @ 25V 17.8nC @ 10V 1.4A Tc 1000V 10V ±20V
IXFN340N06 IXFN340N06 IXYS 0.0000
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0.00000000 download Chassis Mount Tube 2000 HiPerFET™ yes Obsolete 1 (Unlimited) 4 EAR99 RoHS Compliant 4 AVALANCHE RATED SOT-227-4, miniBLOC Chassis Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE Nickel (Ni) UPPER UNSPECIFIED NOT SPECIFIED NOT SPECIFIED 4 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE ISOLATED 700W 700W Tc 340A SWITCHING 0.003Ohm 200 ns SILICON N-Channel 3m Ω @ 100A, 10V 4V @ 8mA 16800pF @ 25V 600nC @ 10V 95ns 33 ns 20V 60V 340A Tc 1360A 10V ±20V
IXTT60N10 IXTT60N10 IXYS 0.0000
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0.00000000 download Surface Mount Tube 2003 yes Active 1 (Unlimited) 2 EAR99 ROHS3 Compliant TO-268-3, D3Pak (2 Leads + Tab), TO-268AA not_compliant Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) GULL WING NOT SPECIFIED NOT SPECIFIED 4 R-PSSO-G2 Not Qualified 1 DRAIN Single 300W 300W Tc 60A SWITCHING 0.02Ohm 70 ns SILICON N-Channel 20m Ω @ 30A, 10V 4V @ 250μA 3200pF @ 25V 110nC @ 10V 20ns 18 ns 20V 100V 80A 60A Tc 320A 1500 mJ 10V ±20V
  • IXTP64N055T
    IXTP64N055T IXYS

    MOSFET (Metal Oxide) N-Channel Tube 13m Ω @ 500mA, 10V ±20V 1420pF @ 25V 37nC @ 10V TO-220-3

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  • IXFA18N65X2
    IXFA18N65X2 IXYS

    MOSFET (Metal Oxide) N-Channel 200m Ω @ 9A, 10V ±30V 1520pF @ 25V 29nC @ 10V 650V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

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  • IXKP10N60C5M
    IXKP10N60C5M IXYS

    MOSFET (Metal Oxide) N-Channel Tube 385m Ω @ 5.2A, 10V ±20V 790pF @ 100V 22nC @ 10V TO-220-3 Full Pack, Isolated Tab

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  • IXFQ30N60X
    IXFQ30N60X IXYS

    MOSFET (Metal Oxide) N-Channel Tube 155m Ω @ 15A, 10V ±30V 2270pF @ 25V 56nC @ 10V 600V TO-3P-3, SC-65-3

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  • IXFP36N20X3
    IXFP36N20X3 IXYS

    MOSFET (Metal Oxide) N-Channel Tube 45m Ω @ 18A, 10V ±20V 1425pF @ 25V 21nC @ 10V 200V TO-220-3

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  • IXTA50N20P-TRL
    IXTA50N20P-TRL IXYS

    MOSFET (Metal Oxide) N-Channel 60m Ω @ 25A, 10V ±20V 2720pF @ 25V 70nC @ 10V 200V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

    Price: 0.0000

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  • IXTV98N20T
    IXTV98N20T IXYS

    MOSFET (Metal Oxide) N-Channel Tube 200V TO-220-3, Short Tab

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  • IXFT80N10Q
    IXFT80N10Q IXYS

    MOSFET (Metal Oxide) N-Channel Tube 15m Ω @ 40A, 10V ±20V 4500pF @ 25V 180nC @ 10V TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

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  • IXFA36N55X2
    IXFA36N55X2 IXYS

    Price: 0.0000

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  • DNA30ER2200IY
    DNA30ER2200IY IXYS

    Standard Diode Rectifier Standard Recovery >500ns, > 200mA (Io) 1.26V @ 30A -55°C~175°C 40μA @ 2200V 2-Termination Tube TO-262-2, I2Pak Through Hole

    Price: 4.3632

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  • IXTA10P50P
    IXTA10P50P IXYS

    MOSFET (Metal Oxide) P-Channel Tube 1 Ω @ 5A, 10V ±20V 2840pF @ 25V 50nC @ 10V 500V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

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  • IXTN60N50L2
    IXTN60N50L2 IXYS

    MOSFET (Metal Oxide) N-Channel Tube 100m Ω @ 30A, 10V ±30V 24000pF @ 25V 610nC @ 10V 500V SOT-227-4, miniBLOC

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  • IXKP13N60C5
    IXKP13N60C5 IXYS

    MOSFET (Metal Oxide) N-Channel Tube 300m Ω @ 6.6A, 10V ±20V 1100pF @ 100V 30nC @ 10V TO-220-3

    Price: 0.0000

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  • IXFV96N15PS
    IXFV96N15PS IXYS

    MOSFET (Metal Oxide) N-Channel Bulk 24m Ω @ 500mA, 10V ±20V 3500pF @ 25V 110nC @ 10V PLUS-220SMD

    Price: 0.0000

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  • IXFN80N48
    IXFN80N48 IXYS

    MOSFET (Metal Oxide) N-Channel Tube 45m Ω @ 500mA, 10V ±20V 9890pF @ 25V 380nC @ 10V SOT-227-4, miniBLOC

    Price: 0.0000

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  • IXFN100N65X2
    IXFN100N65X2 IXYS

    MOSFET (Metal Oxide) N-Channel Tube 30m Ω @ 50A, 10V ±30V 10800pF @ 25V 183nC @ 10V 650V SOT-227-4, miniBLOC

    Price: 0.0000

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  • IXTA230N075T2-7
    IXTA230N075T2-7 IXYS

    MOSFET (Metal Oxide) N-Channel Tube 4.2m Ω @ 50A, 10V ±20V 10500pF @ 25V 178nC @ 10V 75V TO-263-7, D2Pak (6 Leads + Tab)

    Price: 0.0000

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  • IXFV18N90PS
    IXFV18N90PS IXYS

    MOSFET (Metal Oxide) N-Channel Tube 600m Ω @ 500mA, 10V ±30V 5230pF @ 25V 97nC @ 10V PLUS-220SMD

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  • IXTQ40N50Q
    IXTQ40N50Q IXYS

    MOSFET (Metal Oxide) N-Channel Tube 160m Ω @ 500mA, 10V ±30V 4500pF @ 25V 130nC @ 10V TO-3P-3, SC-65-3

    Price: 0.0000

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  • IXFP130N10T2
    IXFP130N10T2 IXYS

    MOSFET (Metal Oxide) N-Channel Tube 9.1m Ω @ 65A, 10V ±20V 6600pF @ 25V 130nC @ 10V 100V TO-220-3

    Price: 0.0000

    RFQ
  • DSEP40-03AS-TRL
    DSEP40-03AS-TRL IXYS

    Standard Diode Rectifier Fast Recovery =< 500ns, > 200mA (Io) 1.44V @ 40A -55°C~175°C 1μA @ 300V 2-Termination Tape & Reel (TR) TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Surface Mount

    Price: 0.0000

    RFQ
  • IXTP50N085T
    IXTP50N085T IXYS

    MOSFET (Metal Oxide) N-Channel Tube 23m Ω @ 25A, 10V ±20V 1460pF @ 25V 34nC @ 10V TO-220-3

    Price: 0.0000

    RFQ
  • IXFH6N100Q
    IXFH6N100Q IXYS

    MOSFET (Metal Oxide) N-Channel Tube 1.9 Ω @ 3A, 10V ±20V 2200pF @ 25V 48nC @ 10V 1000V TO-247-3

    Price: 0.0000

    RFQ
  • IXTC220N075T
    IXTC220N075T IXYS

    MOSFET (Metal Oxide) N-Channel Tube 5m Ω @ 25A, 10V ±20V 7700pF @ 25V 165nC @ 10V ISOPLUS220™

    Price: 0.0000

    RFQ
  • IXTT20N50D
    IXTT20N50D IXYS

    MOSFET (Metal Oxide) N-Channel Tube 330m Ω @ 10A, 10V ±30V 2500pF @ 25V 125nC @ 10V TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

    Price: 0.0000

    RFQ
  • IXTP10P50P
    IXTP10P50P IXYS

    MOSFET (Metal Oxide) P-Channel Tube 1 Ω @ 5A, 10V ±20V 2840pF @ 25V 50nC @ 10V 500V TO-220-3

    Price: 0.0000

    RFQ
  • IXTA80N10T
    IXTA80N10T IXYS

    MOSFET (Metal Oxide) N-Channel Tube 14m Ω @ 25A, 10V ±20V 3040pF @ 25V 60nC @ 10V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

    Price: 0.0000

    RFQ
  • IXTA1R4N100PTRL
    IXTA1R4N100PTRL IXYS

    MOSFET (Metal Oxide) N-Channel 11.8 Ω @ 700mA, 10V ±20V 450pF @ 25V 17.8nC @ 10V 1000V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

    Price: 0.0000

    RFQ
  • IXFN340N06
    IXFN340N06 IXYS

    MOSFET (Metal Oxide) N-Channel Tube 3m Ω @ 100A, 10V ±20V 16800pF @ 25V 600nC @ 10V SOT-227-4, miniBLOC

    Price: 0.0000

    RFQ
  • IXTT60N10
    IXTT60N10 IXYS

    MOSFET (Metal Oxide) N-Channel Tube 20m Ω @ 30A, 10V ±20V 3200pF @ 25V 110nC @ 10V TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

    Price: 0.0000

    RFQ
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