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Discrete Semiconductors

discrete semiconductor.jpg
Discrete Semiconductor refer to electronic components that are individual and separate from each other, as opposed to integrated circuits that contain multiple components on a single chip. These discrete components include diodes, transistors, thyristors, and other similar devices that perform specific functions in electronic circuits. They are commonly used in power supplies, amplifiers, and other electronic devices where precise control and regulation of electrical signals is required. Discrete Semiconductor Products are available in a variety of sizes, shapes, and specifications to meet the needs of different applications. They are widely used in the electronics industry and are essential components in many electronic devices.
Compare Image Name Manufacturer Pricing(USD) Quantity Weight(Kg) Size(LxWxH) Datasheet Factory Lead Time Mount Packaging Published Series Pbfree Code Part Status Moisture Sensitivity Level (MSL) Number of Terminations ECCN Code RoHS Status Lead Free Current Rating Radiation Hardening Number of Pins Additional Feature Package / Case Reach Compliance Code Number of Drivers Resistance Mounting Type Operating Temperature Voltage - Rated DC Technology Operating Mode HTS Code Nominal Supply Current JESD-609 Code Terminal Finish Terminal Position Terminal Form Peak Reflow Temperature (Cel) Time@Peak Reflow Temperature-Max (s) Pin Count JESD-30 Code Operating Temperature (Max) Operating Temperature (Min) Subcategory Qualification Status Max Power Dissipation Output Voltage Diode Element Material Number of Elements Configuration Diode Type Application Number of Phases JEDEC-95 Code Non-rep Pk Forward Current-Max Output Current Case Connection Element Configuration Power Dissipation Turn On Delay Time Drain to Source Resistance Speed Current - Reverse Leakage @ Vr Voltage - Forward (Vf) (Max) @ If Max Reverse Voltage (DC) Average Rectified Current Diode Configuration Voltage - DC Reverse (Vr) (Max) Reverse Current-Max Power Dissipation-Max Continuous Drain Current (ID) Transistor Application Drain-source On Resistance-Max DS Breakdown Voltage-Min Turn-Off Delay Time Transistor Element Material FET Type Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Input Capacitance (Ciss) (Max) @ Vds Gate Charge (Qg) (Max) @ Vgs Rise Time Fall Time (Typ) Gate to Source Voltage (Vgs) Drain to Source Breakdown Voltage FET Feature Current - Continuous Drain (Id) @ 25°C Drain to Source Voltage (Vdss) Pulsed Drain Current-Max (IDM) Avalanche Energy Rating (Eas) Drive Voltage (Max Rds On,Min Rds On) Vgs (Max)
IXTH16N20D2 IXTH16N20D2 IXYS 9.7938
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0.00000000 download 24 Weeks Through Hole Tube 2012 yes Active 1 (Unlimited) 3 ROHS3 Compliant Lead Free TO-247-3 Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) e1 Tin/Silver/Copper (Sn/Ag/Cu) SINGLE NOT SPECIFIED NOT SPECIFIED 3 R-PSFM-T3 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN 695W Tc 16A SWITCHING 0.073Ohm SILICON N-Channel 73m Ω @ 8A, 0V 5500pF @ 25V 208nC @ 5V Depletion Mode 16A Tc 200V ±20V
IXTJ36N20 IXTJ36N20 IXYS 0.0000
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0.00000000 download Through Hole Tube 2001 HiPerFET™ yes Obsolete 1 (Unlimited) 3 EAR99 RoHS Compliant TO-3P-3 Full Pack Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) NOT SPECIFIED NOT SPECIFIED 3 R-PSIP-T3 Not Qualified 1 DRAIN Single 300W 300W Tc 36A SWITCHING 0.07Ohm 110 ns SILICON N-Channel 70m Ω @ 18A, 10V 4V @ 4mA 2970pF @ 25V 140nC @ 10V 130ns 98 ns 20V 200V 36A Tc 144A 10V ±20V
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0.00000000 15 Weeks Active TO-251-3 Stub Leads, IPak compliant Through Hole 150°C TJ MOSFET (Metal Oxide) 80W Tc N-Channel 850m Ω @ 2A, 10V 4.5V @ 250μA 386pF @ 25V 11.8nC @ 10V 4A Tc 700V 10V ±30V
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0.00000000 Surface Mount Tube Active 1 (Unlimited) ROHS3 Compliant TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Surface Mount MOSFET (Metal Oxide) 27A N-Channel 27A Tc 20V
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0.00000000 download Through Hole Tube 2000 HiPerFET™ yes Obsolete 1 (Unlimited) 3 RoHS Compliant Lead Free No 3 AVALANCHE RATED TO-264-3, TO-264AA 150mOhm Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE 3 FET General Purpose Power 1 DRAIN Single 416W 416W Tc 33A SWITCHING 110 ns SILICON N-Channel 160m Ω @ 16.5A, 10V 4V @ 4mA 5700pF @ 25V 227nC @ 10V 42ns 23 ns 20V 500V 33A Tc 2500 mJ 10V ±20V
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0.00000000 download Chassis Mount Bulk 2014 Active 1 (Unlimited) 3 EAR99 ROHS3 Compliant LOW LEAKAGE CURRENT, UL RECOGNIZED TO-240AA Chassis Mount 8541.10.00.80 UPPER UNSPECIFIED NOT SPECIFIED NOT SPECIFIED 3 R-XUFM-X3 150°C -40°C Rectifier Diodes SILICON 2 Standard GENERAL PURPOSE 1 1010A ISOLATED Standard Recovery >500ns, > 200mA (Io) 100μA @ 1200V 1.18V @ 65A 1.2kV 65A 1 Pair Series Connection 1200V 100μA 250W
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0.00000000 download 19 Weeks Through Hole Tube 2015 HiPerFET™ Active 1 (Unlimited) ROHS3 Compliant TO-220-3 Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) 400W Tc 24A N-Channel 175m Ω @ 12A, 10V 4.5V @ 2.5mA 1910pF @ 25V 47nC @ 10V 24A Tc 600V 10V ±30V
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0.00000000 download 26 Weeks Through Hole Tube 2007 TrenchHV™ yes Active 1 (Unlimited) 3 EAR99 ROHS3 Compliant 3 AVALANCHE RATED TO-220-3 unknown Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e1 TIN SILVER COPPER SINGLE NOT SPECIFIED NOT SPECIFIED 3 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE TO-220AB DRAIN 300W Tc 56A SWITCHING 150V SILICON N-Channel 36m Ω @ 28A, 10V 4.5V @ 250μA 2250pF @ 25V 34nC @ 10V 56A Tc 150V 140A 500 mJ 10V ±30V
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0.00000000 download 24 Weeks Surface Mount Tube 2012 Active 1 (Unlimited) 2 ROHS3 Compliant Lead Free TO-268-3, D3Pak (2 Leads + Tab), TO-268AA not_compliant Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) SINGLE GULL WING R-PSSO-G2 FET General Purpose Power 1 SINGLE WITH BUILT-IN DIODE DRAIN 250W Tc 1.5A 2500V SILICON N-Channel 40 Ω @ 750mA, 10V 4V @ 250μA 1660pF @ 25V 41nC @ 10V 1.5A Tc 2500V 6A 10V ±20V
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0.00000000 download 28 Weeks Tube Linear L2™ Active TO-247-3 compliant Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) 540W Tc N-Channel 11m Ω @ 70A, 10V 4.5V @ 250μA 9300pF @ 25V 275nC @ 10V 140A Tc 75V 10V ±20V
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0.00000000 Through Hole Bulk 2010 Active 1 (Unlimited) ROHS3 Compliant 3 ISOPLUS247™ Through Hole MOSFET (Metal Oxide) Single 400mOhm N-Channel 900V
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0.00000000 Surface Mount Bulk Active 1 (Unlimited) ROHS3 Compliant 220 PLUS-220SMD Surface Mount MOSFET (Metal Oxide) 300W Single 300W 5.3mOhm 175A N-Channel 75V 175A Tc
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0.00000000 Obsolete 1 (Unlimited) ROHS3 Compliant
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0.00000000 download Through Hole Tube 2011 HiPerFET™, PolarP2™ yes Active 1 (Unlimited) 3 ROHS3 Compliant AVALANCHE RATED TO-264-3, TO-264AA Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e1 Tin/Silver/Copper (Sn/Ag/Cu) NOT SPECIFIED NOT SPECIFIED 3 R-PSFM-T3 FET General Purpose Power Not Qualified 1 DRAIN Single 960W 960W Tc 30A SWITCHING 0.36Ohm 83 ns SILICON N-Channel 360m Ω @ 15A, 10V 6.5V @ 1mA 13600pF @ 25V 235nC @ 10V 48ns 52 ns 30V 1.1kV 30A Tc 1100V 75A 1500 mJ 10V ±30V
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0.00000000 download 28 Weeks Through Hole Tube 2006 PolarHV™ yes Active 1 (Unlimited) 3 ROHS3 Compliant Lead Free 30A 3 AVALANCHE RATED TO-247-3 Through Hole -55°C~150°C TJ 500V MOSFET (Metal Oxide) ENHANCEMENT MODE NOT SPECIFIED NOT SPECIFIED 3 Not Qualified 1 TO-247AD DRAIN Single 460W 460W Tc 30A SWITCHING 0.2Ohm 75 ns SILICON N-Channel 200m Ω @ 15A, 10V 5V @ 250μA 4150pF @ 25V 70nC @ 10V 27ns 21 ns 30V 500V 30A Tc 75A 1200 mJ 10V ±30V
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0.00000000 download Surface Mount Tube 2006 HiPerFET™, PolarHT™ yes Obsolete 1 (Unlimited) 2 RoHS Compliant Lead Free 22A 3 AVALANCHE RATED PLUS-220SMD Surface Mount -55°C~150°C TJ 600V MOSFET (Metal Oxide) ENHANCEMENT MODE GULL WING NOT SPECIFIED NOT SPECIFIED 3 R-PSSO-G2 Not Qualified 1 DRAIN Single 400W 400W Tc 22A SWITCHING 60 ns SILICON N-Channel 350m Ω @ 11A, 10V 5.5V @ 4mA 3600pF @ 25V 58nC @ 10V 20ns 23 ns 30V 600V 22A Tc 66A 1000 mJ 10V ±30V
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0.00000000 download Through Hole Tube 2009 GigaMOS™ yes Obsolete 1 (Unlimited) 3 EAR99 RoHS Compliant 3 AVALANCHE RATED TO-264-3, TO-264AA Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e1 TIN SILVER COPPER SINGLE NOT SPECIFIED NOT SPECIFIED 3 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN 1670W Tc 260A SWITCHING 0.0065Ohm 170V SILICON N-Channel 6.5m Ω @ 60A, 10V 5V @ 8mA 24000pF @ 25V 400nC @ 10V 260A Tc 170V 700A 10V ±20V
IXTA180N10T7-TRL IXTA180N10T7-TRL IXYS 0.0000
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0.00000000 24 Weeks Active TO-263-7, D2Pak (6 Leads + Tab) Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) 480W Tc N-Channel 6.4m Ω @ 25A, 10V 4.5V @ 250μA 6900pF @ 25V 151nC @ 10V 180A Tc 100V 10V ±30V
IXFA30N25X3 IXFA30N25X3 IXYS 5.7969
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0.00000000 download 19 Weeks Tube HiPerFET™ Active 1 (Unlimited) ROHS3 Compliant TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) 176W Tc N-Channel 60m Ω @ 15A, 10V 4.5V @ 500μA 1450pF @ 25V 21nC @ 10V 30A Tc 250V 10V ±20V
IXFN38N100Q2 IXFN38N100Q2 IXYS 36.2121
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0.00000000 download 8 Weeks Chassis Mount Tube 2003 HiPerFET™ yes Obsolete 1 (Unlimited) 4 RoHS Compliant Lead Free 4 AVALANCHE RATED SOT-227-4, miniBLOC Chassis Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE Nickel (Ni) UPPER UNSPECIFIED NOT SPECIFIED NOT SPECIFIED 4 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE ISOLATED 890W 890W Tc 38A SWITCHING 0.25Ohm 57 ns SILICON N-Channel 250m Ω @ 19A, 10V 5V @ 8mA 7200pF @ 25V 250nC @ 10V 28ns 15 ns 30V 1kV 38A Tc 1000V 152A 5000 mJ 10V ±30V
IXFT120N30X3HV IXFT120N30X3HV IXYS 17.5794
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0.00000000 download 19 Weeks Tube HiPerFET™ Active 1 (Unlimited) ROHS3 Compliant TO-268-3, D3Pak (2 Leads + Tab), TO-268AA Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) 735W Tc N-Channel 11m Ω @ 60A, 10V 4.5V @ 4mA 10.5nF @ 25V 170nC @ 10V 120A Tc 300V 10V ±20V
IXTY1N80P-TRL IXTY1N80P-TRL IXYS 0.0000
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0.00000000 24 Weeks Active TO-252-3, DPak (2 Leads + Tab), SC-63 Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) 42W Tc N-Channel 14 Ω @ 500mA, 10V 4V @ 50μA 250pF @ 25V 9nC @ 10V 1A Tc 800V 10V ±30V
IXFX100N65X2 IXFX100N65X2 IXYS 74.9528
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0.00000000 download 19 Weeks Through Hole Tube 2015 HiPerFET™ Active 1 (Unlimited) ROHS3 Compliant TO-247-3 unknown Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) 1040W Tc 100A N-Channel 30m Ω @ 50A, 10V 5.5V @ 4mA 11300pF @ 25V 180nC @ 10V 100A Tc 650V 10V ±30V
IXFA8N85XHV IXFA8N85XHV IXYS 0.0000
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0.00000000 download 19 Weeks Tube HiPerFET™ Active 1 (Unlimited) TO-263-3, D2Pak (2 Leads + Tab), TO-263AB compliant Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) 200W Tc N-Channel 850m Ω @ 4A, 10V 5.5V @ 250μA 654pF @ 25V 17nC @ 10V 8A Tc 850V 10V ±30V
IXFQ10N80P IXFQ10N80P IXYS 0.0000
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0.00000000 download 24 Weeks Through Hole Tube 2009 HiPerFET™, PolarHT™ yes Active 1 (Unlimited) 3 ROHS3 Compliant 3 AVALANCHE RATED TO-3P-3, SC-65-3 Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) NOT SPECIFIED NOT SPECIFIED 3 FET General Purpose Power Not Qualified 1 DRAIN Single 300W 300W Tc 10A SWITCHING 62 ns SILICON N-Channel 1.1 Ω @ 5A, 10V 5.5V @ 2.5mA 2050pF @ 25V 40nC @ 10V 22ns 22 ns 30V 800V 10A Tc 600 mJ 10V ±30V
IXFR26N100P IXFR26N100P IXYS 0.0000
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0.00000000 download 30 Weeks Through Hole Tube 2008 HiPerFET™, PolarP2™ yes Active 1 (Unlimited) 3 ROHS3 Compliant 3 UL RECOGNIZED, AVALANCHE RATED ISOPLUS247™ Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e1 Tin/Silver/Copper (Sn/Ag/Cu) NOT SPECIFIED NOT SPECIFIED 3 FET General Purpose Power Not Qualified 1 ISOLATED Single 290W 290W Tc 15A SWITCHING 72 ns SILICON N-Channel 430m Ω @ 13A, 10V 6.5V @ 1mA 11900pF @ 25V 197nC @ 10V 45ns 50 ns 30V 1kV 15A Tc 1000V 65A 1000 mJ 10V ±30V
IXFY8N65X2 IXFY8N65X2 IXYS 0.0000
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0.00000000 download 19 Weeks Tube HiPerFET™ Active ROHS3 Compliant TO-252-3, DPak (2 Leads + Tab), SC-63 Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) 150W Tc N-Channel 450m Ω @ 4A, 10V 5V @ 250μA 790pF @ 25V 11nC @ 10V 8A Tc 650V 10V ±30V
IXFP26N30X3 IXFP26N30X3 IXYS 3.6088
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0.00000000 download 19 Weeks Tube HiPerFET™ Active 1 (Unlimited) ROHS3 Compliant TO-220-3 Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) 170W Tc N-Channel 66m Ω @ 13A, 10V 4.5V @ 500μA 1.465nF @ 25V 22nC @ 10V 26A Tc 300V 10V ±20V
IXFH60N25Q IXFH60N25Q IXYS 0.0000
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0.00000000 download Through Hole Tube 2000 HiPerFET™ yes Obsolete 1 (Unlimited) 3 EAR99 RoHS Compliant Lead Free 3 AVALANCHE RATED TO-247-3 Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE NOT SPECIFIED NOT SPECIFIED 3 FET General Purpose Power Not Qualified 1 DRAIN Single 360W 360W Tc 60A 0.047Ohm 80 ns SILICON N-Channel 47m Ω @ 500mA, 10V 4V @ 4mA 5100pF @ 25V 180nC @ 10V 60ns 25 ns 20V 250V 60A Tc 240A 1500 mJ 10V ±20V
IXFK240N15T2 IXFK240N15T2 IXYS 0.0000
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0.00000000 download 30 Weeks Through Hole Tube 2007 GigaMOS™ yes Active 1 (Unlimited) 3 EAR99 ROHS3 Compliant Lead Free AVALANCHE RATED TO-264-3, TO-264AA 1 Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE 120A e1 Tin/Silver/Copper (Sn/Ag/Cu) SINGLE NOT SPECIFIED NOT SPECIFIED 3 R-PSFM-T3 FET General Purpose Power Not Qualified 150V 1 SINGLE WITH BUILT-IN DIODE 240A DRAIN 125 ns 1250W Tc 240A SWITCHING 0.0052Ohm 145 ns SILICON N-Channel 5.2m Ω @ 60A, 10V 5V @ 8mA 32000pF @ 25V 460nC @ 10V 125ns 145 ns 240A Tc 600A 2000 mJ 10V ±20V
  • IXTH16N20D2
    IXTH16N20D2 IXYS

    MOSFET (Metal Oxide) N-Channel Tube 73m Ω @ 8A, 0V ±20V 5500pF @ 25V 208nC @ 5V 200V TO-247-3

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  • IXTJ36N20
    IXTJ36N20 IXYS

    MOSFET (Metal Oxide) N-Channel Tube 70m Ω @ 18A, 10V ±20V 2970pF @ 25V 140nC @ 10V TO-3P-3 Full Pack

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  • IXTU4N70X2
    IXTU4N70X2 IXYS

    MOSFET (Metal Oxide) N-Channel 850m Ω @ 2A, 10V ±30V 386pF @ 25V 11.8nC @ 10V 700V TO-251-3 Stub Leads, IPak

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  • IXTA27N20T
    IXTA27N20T IXYS

    MOSFET (Metal Oxide) N-Channel Tube 20V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

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  • IXFK33N50
    IXFK33N50 IXYS

    MOSFET (Metal Oxide) N-Channel Tube 160m Ω @ 16.5A, 10V ±20V 5700pF @ 25V 227nC @ 10V TO-264-3, TO-264AA

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  • MDMA65P1200TG
    MDMA65P1200TG IXYS

    Standard Rectifier Diode 1 Pair Series Connection Standard Recovery >500ns, > 200mA (Io) 65A 1.2kV-DC 2-Element TO-240AA Chassis Mount

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  • IXFP24N60X
    IXFP24N60X IXYS

    MOSFET (Metal Oxide) N-Channel Tube 175m Ω @ 12A, 10V ±30V 1910pF @ 25V 47nC @ 10V 600V TO-220-3

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  • IXTP56N15T
    IXTP56N15T IXYS

    MOSFET (Metal Oxide) N-Channel Tube 36m Ω @ 28A, 10V ±30V 2250pF @ 25V 34nC @ 10V 150V TO-220-3

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  • IXTT1N250HV
    IXTT1N250HV IXYS

    MOSFET (Metal Oxide) N-Channel Tube 40 Ω @ 750mA, 10V ±20V 1660pF @ 25V 41nC @ 10V 2500V TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

    Price: 0.0000

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  • IXTH140N075L2
    IXTH140N075L2 IXYS

    MOSFET (Metal Oxide) N-Channel Tube 11m Ω @ 70A, 10V ±20V 9300pF @ 25V 275nC @ 10V 75V TO-247-3

    Price: 20.0987

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  • IXFR24N90Q
    IXFR24N90Q IXYS

    MOSFET (Metal Oxide) N-Channel Bulk ISOPLUS247™

    Price: 0.0000

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  • IXUV170N075S
    IXUV170N075S IXYS

    MOSFET (Metal Oxide) N-Channel Bulk PLUS-220SMD

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  • IXFM1627
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  • IXFK30N110P
    IXFK30N110P IXYS

    MOSFET (Metal Oxide) N-Channel Tube 360m Ω @ 15A, 10V ±30V 13600pF @ 25V 235nC @ 10V 1100V TO-264-3, TO-264AA

    Price: 0.0000

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  • IXTH30N50P
    IXTH30N50P IXYS

    MOSFET (Metal Oxide) N-Channel Tube 200m Ω @ 15A, 10V ±30V 4150pF @ 25V 70nC @ 10V TO-247-3

    Price: 7.4510

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  • IXFV22N60PS
    IXFV22N60PS IXYS

    MOSFET (Metal Oxide) N-Channel Tube 350m Ω @ 11A, 10V ±30V 3600pF @ 25V 58nC @ 10V PLUS-220SMD

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  • IXFK260N17T
    IXFK260N17T IXYS

    MOSFET (Metal Oxide) N-Channel Tube 6.5m Ω @ 60A, 10V ±20V 24000pF @ 25V 400nC @ 10V 170V TO-264-3, TO-264AA

    Price: 0.0000

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  • IXTA180N10T7-TRL
    IXTA180N10T7-TRL IXYS

    MOSFET (Metal Oxide) N-Channel 6.4m Ω @ 25A, 10V ±30V 6900pF @ 25V 151nC @ 10V 100V TO-263-7, D2Pak (6 Leads + Tab)

    Price: 0.0000

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  • IXFA30N25X3
    IXFA30N25X3 IXYS

    MOSFET (Metal Oxide) N-Channel Tube 60m Ω @ 15A, 10V ±20V 1450pF @ 25V 21nC @ 10V 250V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

    Price: 5.7969

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  • IXFN38N100Q2
    IXFN38N100Q2 IXYS

    MOSFET (Metal Oxide) N-Channel Tube 250m Ω @ 19A, 10V ±30V 7200pF @ 25V 250nC @ 10V 1000V SOT-227-4, miniBLOC

    Price: 36.2121

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  • IXFT120N30X3HV
    IXFT120N30X3HV IXYS

    MOSFET (Metal Oxide) N-Channel Tube 11m Ω @ 60A, 10V ±20V 10.5nF @ 25V 170nC @ 10V 300V TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

    Price: 17.5794

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  • IXTY1N80P-TRL
    IXTY1N80P-TRL IXYS

    MOSFET (Metal Oxide) N-Channel 14 Ω @ 500mA, 10V ±30V 250pF @ 25V 9nC @ 10V 800V TO-252-3, DPak (2 Leads + Tab), SC-63

    Price: 0.0000

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  • IXFX100N65X2
    IXFX100N65X2 IXYS

    MOSFET (Metal Oxide) N-Channel Tube 30m Ω @ 50A, 10V ±30V 11300pF @ 25V 180nC @ 10V 650V TO-247-3

    Price: 74.9528

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  • IXFA8N85XHV
    IXFA8N85XHV IXYS

    MOSFET (Metal Oxide) N-Channel Tube 850m Ω @ 4A, 10V ±30V 654pF @ 25V 17nC @ 10V 850V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

    Price: 0.0000

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  • IXFQ10N80P
    IXFQ10N80P IXYS

    MOSFET (Metal Oxide) N-Channel Tube 1.1 Ω @ 5A, 10V ±30V 2050pF @ 25V 40nC @ 10V TO-3P-3, SC-65-3

    Price: 0.0000

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  • IXFR26N100P
    IXFR26N100P IXYS

    MOSFET (Metal Oxide) N-Channel Tube 430m Ω @ 13A, 10V ±30V 11900pF @ 25V 197nC @ 10V 1000V ISOPLUS247™

    Price: 0.0000

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  • IXFY8N65X2
    IXFY8N65X2 IXYS

    MOSFET (Metal Oxide) N-Channel Tube 450m Ω @ 4A, 10V ±30V 790pF @ 25V 11nC @ 10V 650V TO-252-3, DPak (2 Leads + Tab), SC-63

    Price: 0.0000

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  • IXFP26N30X3
    IXFP26N30X3 IXYS

    MOSFET (Metal Oxide) N-Channel Tube 66m Ω @ 13A, 10V ±20V 1.465nF @ 25V 22nC @ 10V 300V TO-220-3

    Price: 3.6088

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  • IXFH60N25Q
    IXFH60N25Q IXYS

    MOSFET (Metal Oxide) N-Channel Tube 47m Ω @ 500mA, 10V ±20V 5100pF @ 25V 180nC @ 10V TO-247-3

    Price: 0.0000

    RFQ
  • IXFK240N15T2
    IXFK240N15T2 IXYS

    MOSFET (Metal Oxide) N-Channel Tube 5.2m Ω @ 60A, 10V ±20V 32000pF @ 25V 460nC @ 10V TO-264-3, TO-264AA

    Price: 0.0000

    RFQ
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United Kingdom/GBP Summary
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Orders are typically delivered to United Kingdom within 48 hours depending on location.

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Free delivery to United Kingdom on orders of £33 or more. A delivery charge of £12 will be billed on all orders less than £33.

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