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Discrete Semiconductors

discrete semiconductor.jpg
Discrete Semiconductor refer to electronic components that are individual and separate from each other, as opposed to integrated circuits that contain multiple components on a single chip. These discrete components include diodes, transistors, thyristors, and other similar devices that perform specific functions in electronic circuits. They are commonly used in power supplies, amplifiers, and other electronic devices where precise control and regulation of electrical signals is required. Discrete Semiconductor Products are available in a variety of sizes, shapes, and specifications to meet the needs of different applications. They are widely used in the electronics industry and are essential components in many electronic devices.
Compare Image Name Manufacturer Pricing(USD) Quantity Weight(Kg) Size(LxWxH) Datasheet Packaging Series Pbfree Code Part Status Moisture Sensitivity Level (MSL) Number of Terminations RoHS Status Additional Feature Package / Case Reach Compliance Code Mounting Type Operating Temperature Technology Operating Mode JESD-609 Code Terminal Finish Terminal Position Terminal Form Peak Reflow Temperature (Cel) Time@Peak Reflow Temperature-Max (s) Pin Count Surface Mount JESD-30 Code Qualification Status Power - Max Diode Element Material Number of Elements Configuration Diode Type Output Current-Max Application Number of Phases Rep Pk Reverse Voltage-Max JEDEC-95 Code Non-rep Pk Forward Current-Max Polarity Tolerance Case Connection Polarity/Channel Type Supplier Device Package Speed Current - Reverse Leakage @ Vr Voltage - Forward (Vf) (Max) @ If Operating Temperature - Junction Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Reverse Recovery Time Power Dissipation-Max Capacitance @ Vr, F Transistor Application Drain-source On Resistance-Max DS Breakdown Voltage-Min Transistor Element Material FET Type Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Input Capacitance (Ciss) (Max) @ Vds Gate Charge (Qg) (Max) @ Vgs FET Feature Drain Current-Max (Abs) (ID) Current - Continuous Drain (Id) @ 25°C Drain to Source Voltage (Vdss) Pulsed Drain Current-Max (IDM) Avalanche Energy Rating (Eas) Transistor Type Transition Frequency Drive Voltage (Max Rds On,Min Rds On) Vgs (Max) Current - Collector Cutoff (Max) Voltage - Collector Emitter Breakdown (Max) Current - Collector (Ic) (Max) Reference Voltage Voltage Tol-Max Working Test Current Impedance-Max Voltage - Zener (Nom) (Vz) DC Current Gain (hFE) (Min) @ Ic, Vce Vce Saturation (Max) @ Ib, Ic Frequency - Transition
FDMS2504SDC FDMS2504SDC Rochester Electronics, LLC 0.0000
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MBT35200MT2G MBT35200MT2G Rochester Electronics, LLC 0.0000
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0.00000000 download Tape & Reel (TR) Obsolete 3 (168 Hours) Non-RoHS Compliant SOT-23-6 Surface Mount 625mW 6-TSOP PNP 100nA 35V 2A 100 @ 1.5A 1.5V 310mV @ 20mA, 2A 100MHz
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NTD95N02RT4 NTD95N02RT4 Rochester Electronics, LLC 0.0000
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0.00000000 download Tape & Reel (TR) Obsolete 1 (Unlimited) ROHS3 Compliant DO-204AC, DO-15, Axial Through Hole Standard DO-15 Standard Recovery >500ns, > 200mA (Io) 5μA @ 300V 1.4V @ 1.5A -55°C~150°C 300V 1.5A 25pF @ 4V 1MHz
PMT29EN,115 PMT29EN,115 Rochester Electronics, LLC 1.6648
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0.00000000 download Tape & Reel (TR) Obsolete 1 (Unlimited) ROHS3 Compliant TO-261-4, TO-261AA Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) SOT-223 820mW Ta 8.33W Tc N-Channel 29mOhm @ 6A, 10V 2.5V @ 250μA 492pF @ 15V 11nC @ 10V 6A Ta 30V 4.5V 10V ±20V
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0.00000000 download Tube UltraFET™ yes Obsolete 1 (Unlimited) 3 ROHS3 Compliant TO-251-3 Short Leads, IPak, TO-251AA unknown Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE NOT SPECIFIED SINGLE NOT SPECIFIED NOT SPECIFIED NO R-PSIP-T3 COMMERCIAL 1 SINGLE WITH BUILT-IN DIODE DRAIN 38W Tc SWITCHING 0.117Ohm 60V SILICON N-Channel 92m Ω @ 13A, 10V 3V @ 250μA 350pF @ 25V 11.3nC @ 10V 12A 12A Tc 60V 4.5V 10V ±16V
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NDS335N NDS335N Rochester Electronics, LLC 0.0000
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0.00000000 download Tape & Reel (TR) Obsolete 1 (Unlimited) ROHS3 Compliant 6-WDFN Exposed Pad Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) 6-WDFN (2x2) 710mW Ta P-Channel 100mOhm @ 2A, 4.5V 1V @ 250μA 531pF @ 10V 6.2nC @ 4.5V Schottky Diode (Isolated) 2.3A Ta 20V 1.8V 4.5V ±8V
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