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Single MOSFETs Transistors

Compare Image Name Manufacturer Pricing(USD) Quantity Weight(Kg) Size(LxWxH) Datasheet Packaging Published Series Part Status Moisture Sensitivity Level (MSL) Number of Terminations ECCN Code RoHS Status Number of Pins Additional Feature Package / Case REACH SVHC Mounting Type Operating Temperature Technology Operating Mode JESD-609 Code Terminal Finish Peak Reflow Temperature (Cel) Time@Peak Reflow Temperature-Max (s) Pin Count Surface Mount Subcategory Qualification Status Number of Elements Case Connection Element Configuration Power Dissipation Power Dissipation-Max Continuous Drain Current (ID) Transistor Application Drain-source On Resistance-Max Turn-Off Delay Time Transistor Element Material FET Type Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Input Capacitance (Ciss) (Max) @ Vds Gate Charge (Qg) (Max) @ Vgs Rise Time Fall Time (Typ) Gate to Source Voltage (Vgs) Drain to Source Breakdown Voltage Current - Continuous Drain (Id) @ 25°C Drain to Source Voltage (Vdss) Pulsed Drain Current-Max (IDM) Avalanche Energy Rating (Eas) Drive Voltage (Max Rds On,Min Rds On) Vgs (Max)
IXFK44N50F IXFK44N50F IXYS-RF 55.2187
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0.00000000 download Tube 2002 HiPerRF™ Obsolete 1 (Unlimited) 3 EAR99 RoHS Compliant 3 AVALANCHE RATED TO-264-3, TO-264AA No SVHC Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e1 Tin/Silver/Copper (Sn/Ag/Cu) NOT SPECIFIED NOT SPECIFIED 3 NO FET General Purpose Power Not Qualified 1 DRAIN Single 500W 500W Tc 44A SWITCHING 0.12Ohm 53 ns SILICON N-Channel 120m Ω @ 22A, 10V 5.5V @ 4mA 5500pF @ 25V 156nC @ 10V 18ns 8 ns 20V 500V 44A Tc 184A 2500 mJ 10V ±20V
IXRFSM12N100 IXRFSM12N100 IXYS-RF 0.0000
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0.00000000 Tube SMPD Obsolete 1 (Unlimited) 16-BESOP (0.790, 20.11mm Width), 15 Leads, Exposed Pad Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) 940W N-Channel 1.05 Ω @ 6A, 15V 5.5V @ 250μA 2875pF @ 800V 77nC @ 10V 12A Tc 1000V 15V ±20V
IXRFSM18N50 IXRFSM18N50 IXYS-RF 0.0000
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0.00000000 Tube SMPD Obsolete 1 (Unlimited) 16-BESOP (0.790, 20.11mm Width), 15 Leads, Exposed Pad Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) 835W N-Channel 340m Ω @ 9.5A, 20V 6.5V @ 250μA 2250pF @ 400V 42nC @ 10V 19A Tc 500V 20V ±20V
  • IXFK44N50F
    IXFK44N50F IXYS-RF

    MOSFET (Metal Oxide) N-Channel Tube 120m Ω @ 22A, 10V ±20V 5500pF @ 25V 156nC @ 10V TO-264-3, TO-264AA

    Price: 55.2187

    RFQ
  • IXRFSM12N100
    IXRFSM12N100 IXYS-RF

    MOSFET (Metal Oxide) N-Channel Tube 1.05 Ω @ 6A, 15V ±20V 2875pF @ 800V 77nC @ 10V 1000V 16-BESOP (0.790, 20.11mm Width), 15 Leads, Exposed Pad

    Price: 0.0000

    RFQ
  • IXRFSM18N50
    IXRFSM18N50 IXYS-RF

    MOSFET (Metal Oxide) N-Channel Tube 340m Ω @ 9.5A, 20V ±20V 2250pF @ 400V 42nC @ 10V 500V 16-BESOP (0.790, 20.11mm Width), 15 Leads, Exposed Pad

    Price: 0.0000

    RFQ
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