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Single MOSFETs Transistors

Compare Image Name Manufacturer Pricing(USD) Quantity Weight(Kg) Size(LxWxH) Series Package / Case Mfr Mounting Type Operating Temperature Technology Supplier Device Package FET Type Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Input Capacitance (Ciss) (Max) @ Vds Gate Charge (Qg) (Max) @ Vgs FET Feature Current - Continuous Drain (Id) @ 25°C Drain to Source Voltage (Vdss) Vgs (Max) Package Product Status Power Dissipation (Max) Drive Voltage (Max Rds On, Min Rds On)
IRF523 IRF523 Harris Corporation 8.9611
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0.00000000 - TO-220-3 Harris Corporation Through Hole -55°C ~ 175°C (TJ) MOSFET (Metal Oxide) TO-220 N-Channel 360mOhm @ 5.6A, 10V 4V @ 250μA 350 pF @ 25 V 15 nC @ 10 V - 8A (Tc) 80 V ±20V Bulk Active 60W (Tc) 10V
IRF613 IRF613 Harris Corporation 0.0000
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0.00000000 - TO-220-3 Harris Corporation Through Hole -55°C ~ 150°C (TJ) MOSFET (Metal Oxide) TO-220AB N-Channel 2.4Ohm @ 1.6A, 10V 4V @ 250μA 135 pF @ 25 V 8.2 nC @ 10 V - 2.6A (Tc) 150 V ±20V Bulk Active 43W (Tc) 10V
RFP18N08 RFP18N08 Harris Corporation 1.2220
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0.00000000 - TO-220-3 Harris Corporation Through Hole -55°C ~ 150°C (TJ) MOSFET (Metal Oxide) TO-220 N-Channel 100mOhm @ 9A, 10V 4V @ 1mA 1700 pF @ 25 V - 18A (Tc) 80 V ±20V
RFP15N12 RFP15N12 Harris Corporation 212.1528
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0.00000000 - TO-220-3 Harris Corporation Through Hole -55°C ~ 150°C (TJ) MOSFET (Metal Oxide) TO-220-3 N-Channel 150mOhm @ 7.5A, 10V 4V @ 1mA 1700 pF @ 25 V - 15A (Tc) 120 V ±20V
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