Items : %s%s
Single IGBTs
Additional Feature
- AVALANCHE RATED
- HIGH RELIABILITY, LOW CONDUCTION LOSS
- LOW CONDUCTION LOSS
- LOW CONDUCTION LOSS, AVALANCHE RATED
- LOW CONDUCTION LOSS, HIGH SPEED SWITCHING
- LOW SATURATION VOLTAGE
- UL RECOGNIZED, HIGH RELIABILITY
- ULTRA FAST
- ULTRA FAST SOFT RECOVERY
- ULTRA FAST SWITCHING
Contact Plating
- Tin
ECCN Code
- EAR99
Factory Lead Time
- 10 Weeks
- 11 Weeks
- 12 Weeks
- 13 Weeks
- 14 Weeks
- 15 Weeks
- 16 Weeks
- 18 Weeks
- 20 Weeks
- 21 Weeks
- 22 Weeks
- 23 Weeks
- 24 Weeks
- 25 Weeks
- 26 Weeks
- 30 Weeks
- 33 Weeks
- 36 Weeks
- 38 Weeks
- 4 Weeks
- 44 Weeks
- 5 Weeks
- 50 Weeks
- 6 Weeks
- 7 Weeks
- 8 Weeks
- 9 Weeks
- 99 Weeks
JESD-609 Code
- e1
- e3
Lifecycle Status
- ACTIVE (Last Updated: 1 day ago)
- ACTIVE (Last Updated: 1 week ago)
- ACTIVE (Last Updated: 11 hours ago)
- ACTIVE (Last Updated: 12 hours ago)
- ACTIVE (Last Updated: 13 hours ago)
- ACTIVE (Last Updated: 15 hours ago)
- ACTIVE (Last Updated: 2 days ago)
- ACTIVE (Last Updated: 3 days ago)
- ACTIVE (Last Updated: 4 days ago)
- ACTIVE (Last Updated: 5 days ago)
- ACTIVE (Last Updated: 6 days ago)
- ACTIVE (Last Updated: 7 months ago)
- ACTIVE (Last Updated: 8 hours ago)
- ACTIVE, NOT REC (Last Updated: 1 day ago)
- ACTIVE, NOT REC (Last Updated: 1 week ago)
- ACTIVE, NOT REC (Last Updated: 10 hours ago)
- ACTIVE, NOT REC (Last Updated: 12 hours ago)
- ACTIVE, NOT REC (Last Updated: 2 days ago)
- ACTIVE, NOT REC (Last Updated: 2 weeks ago)
- ACTIVE, NOT REC (Last Updated: 3 days ago)
- ACTIVE, NOT REC (Last Updated: 4 days ago)
- ACTIVE, NOT REC (Last Updated: 5 days ago)
- ACTIVE, NOT REC (Last Updated: 6 days ago)
- LAST SHIPMENTS (Last Updated: 2 days ago)
- LAST SHIPMENTS (Last Updated: 4 days ago)
Manufacturer Package Identifier
- D2PAK-3 CASE 418AJ ISSUE B
Max Operating Temperature
- 150°C
- 175°C
Min Operating Temperature
- -55°C
Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Not Applicable
Mount
- Surface Mount
- Surface Mount, Through Hole
- Through Hole
Mounting Type
- Surface Mount
- Through Hole
Number of Pins
- 2
- 247
- 3
- 4
- 6
Number of Terminations
- 2
- 3
- 6
Operating Temperature
- -40°C~150°C TJ
- -40°C~175°C TJ
- -55°C~150°C TJ
- -55°C~175°C TJ
Package / Case
- i4-Pac™-5 (3 Leads)
- TO-220-3
- TO-220-3 Full Pack
- TO-247-3
- TO-247-3 Variant
- TO-247-4
- TO-252-3, DPak (2 Leads + Tab), SC-63
- TO-262-3 Long Leads, I2Pak, TO-262AA
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- TO-263-7, D2Pak (6 Leads + Tab), TO-263CB
- TO-264-3, TO-264AA
- TO-274AA
- TO-3P-3 Full Pack
- TO-3P-3, SC-65-3
Packaging
- Bulk
- Cut Tape (CT)
- Tape & Reel (TR)
- Tube
Part Status
- Active
- Last Time Buy
- Not For New Designs
- Obsolete
Pbfree Code
- no
- yes
Published
- 1997
- 1998
- 1999
- 2000
- 2001
- 2002
- 2003
- 2004
- 2005
- 2006
- 2007
- 2008
- 2009
- 2010
- 2011
- 2012
- 2013
- 2014
- 2015
- 2016
- 2017
Series
- Automotive, AEC-Q101
- Automotive, AEC-Q101, EcoSPARK®
- BIMOSFET™
- EcoSPARK®
- GenX3™
- PowerMESH™
- TrenchStop®
- TrenchStop™
Supplier Device Package
- TO-220AB
- TO-247AC
Surface Mount
- NO
Terminal Finish
- MATTE TIN
- Matte Tin (Sn)
- Matte Tin (Sn) - with Nickel (Ni) barrier
- MATTE TIN OVER NICKEL
- TIN
- Tin (Sn)
- TIN SILVER COPPER
- Tin/Silver/Copper (Sn/Ag/Cu)
Termination
- SMD/SMT
- Through Hole
Transistor Element Material
- SILICON
Weight
- 1.31247g
- 1.312g
- 1.8g
- 2.084g
- 2.240009g
- 2.27g
- 2.299997g
- 260.37mg
- 260.39037mg
- 2g
- 350.003213mg
- 38.000013g
- 6.000006g
- 6.289g
- 6.39g
- 6.401g
- 6.500007g
- 6.756g
- 6.962g
- 7.629g
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Datasheet | Factory Lead Time | Lifecycle Status | Mount | Packaging | Published | Series | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | Termination | ECCN Code | Max Operating Temperature | Min Operating Temperature | Length | RoHS Status | Lead Free | Current Rating | Radiation Hardening | Number of Pins | Additional Feature | Package / Case | REACH SVHC | Reach Compliance Code | Height | Width | Mounting Type | Weight | Operating Temperature | Voltage - Rated DC | Input Type | HTS Code | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Time@Peak Reflow Temperature-Max (s) | Base Part Number | Pin Count | Surface Mount | JESD-30 Code | Operating Temperature (Max) | Subcategory | Qualification Status | Max Power Dissipation | Power - Max | Number of Elements | Configuration | JEDEC-95 Code | Case Connection | Halogen Free | Polarity/Channel Type | Power Dissipation-Max (Abs) | Element Configuration | Power Dissipation | Turn On Delay Time | Max Breakdown Voltage | Supplier Device Package | Reverse Recovery Time | Max Collector Current | Collector Emitter Breakdown Voltage | Collector Emitter Voltage (VCEO) | Max Junction Temperature (Tj) | Transistor Application | Turn-Off Delay Time | Transistor Element Material | Rise Time | Collector Emitter Saturation Voltage | Turn On Time | Vce(on) (Max) @ Vge, Ic | Turn Off Time-Nom (toff) | IGBT Type | Gate-Emitter Voltage-Max | Voltage - Collector Emitter Breakdown (Max) | Current - Collector (Ic) (Max) | Continuous Collector Current | Gate-Emitter Thr Voltage-Max | Fall Time-Max (tf) | Test Condition | Gate Charge | Current - Collector Pulsed (Icm) | Td (on/off) @ 25°C | Switching Energy |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IRG4BC40W-STRRP | Infineon Technologies | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 13 Weeks | Surface Mount | Tape & Reel (TR) | 2004 | Last Time Buy | 1 (Unlimited) | 2 | ROHS3 Compliant | Lead Free | No | 3 | LOW CONDUCTION LOSS | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Surface Mount | 260.39037mg | -55°C~150°C TJ | Standard | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 260 | 30 | R-PSSO-G2 | Insulated Gate BIP Transistors | 160W | 160W | 1 | COLLECTOR | N-CHANNEL | Single | 40A | 600V | 2.5V | POWER CONTROL | SILICON | 48 ns | 2.5V @ 15V, 20A | 294 ns | 20V | 6V | 110ns | 480V, 20A, 10 Ω, 15V | 98nC | 160A | 27ns/100ns | 110μJ (on), 230μJ (off) | ||||||||||||||||||||||||||||||||||||||||
 |
SIGC25T60NCX1SA4 | Infineon Technologies | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Last Time Buy | 1 (Unlimited) | ROHS3 Compliant | Die | Surface Mount | -55°C~150°C TJ | Standard | Die | 2.5V @ 15V, 30A | NPT | 600V | 30A | 300V, 30A, 8.2Ohm, 15V | 90A | 21ns/110ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
IRG7CH23K10EF | Infineon Technologies | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Obsolete | Not Applicable | RoHS Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRGP4630D-EPBF | Infineon Technologies | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Through Hole | Tube | 2014 | Obsolete | 1 (Unlimited) | EAR99 | RoHS Compliant | 3 | TO-247-3 | No SVHC | Through Hole | -40°C~175°C TJ | Standard | NOT SPECIFIED | NOT SPECIFIED | 206W | 206W | Single | 100 ns | 47A | 600V | 1.95V | 1.65V | 1.95V @ 15V, 18A | 400V, 18A, 22 Ω, 15V | 35nC | 54A | 40ns/105ns | 95μJ (on), 350μJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
NGTG30N60FWG | ON Semiconductor | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 8 Weeks | LAST SHIPMENTS (Last Updated: 22 hours ago) | Tube | 2012 | yes | Obsolete | 1 (Unlimited) | EAR99 | 16.25mm | RoHS Compliant | Lead Free | 3 | TO-247-3 | No SVHC | 21.4mm | 5.3mm | Through Hole | -55°C~150°C TJ | Standard | e3 | Tin (Sn) | 3 | NO | Insulated Gate BIP Transistors | 167W | Halogen Free | N-CHANNEL | Single | 167W | 60A | 600V | 600V | 1.45V | 1.7V @ 15V, 30A | Trench | 20V | 6.5V | 400V, 30A, 10 Ω, 15V | 170nC | 120A | 81ns/190ns | 650μJ (on), 650μJ (off) | ||||||||||||||||||||||||||||||||||||||||||||
 |
IRGB4B60KD1PBF | Infineon Technologies | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 16 Weeks | Through Hole | Tube | 2003 | Obsolete | 1 (Unlimited) | 3 | EAR99 | 10.5156mm | RoHS Compliant | Lead Free | 11A | No | 3 | ULTRA FAST SOFT RECOVERY | TO-220-3 | 15.24mm | 4.69mm | Through Hole | -55°C~175°C TJ | 600V | Standard | Insulated Gate BIP Transistors | 63W | 1 | TO-220AB | COLLECTOR | N-CHANNEL | Single | 63W | 93 ns | 11A | 600V | 2.5V | MOTOR CONTROL | SILICON | 18ns | 2.5V | 40 ns | 2.5V @ 15V, 4A | 199 ns | NPT | 20V | 5.5V | 89ns | 400V, 4A, 100 Ω, 15V | 12nC | 22A | 22ns/100ns | 73μJ (on), 47μJ (off) | ||||||||||||||||||||||||||||||||||||
 |
IRG4IBC10UDPBF | Infineon Technologies | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 16 Weeks | Through Hole | Tube | 1999 | Last Time Buy | 1 (Unlimited) | 3 | Through Hole | EAR99 | 10.7442mm | ROHS3 Compliant | Lead Free | 6.8A | No | 3 | ULTRA FAST | TO-220-3 Full Pack | No SVHC | 16.129mm | 4.826mm | Through Hole | -55°C~150°C TJ | 600V | Standard | Insulated Gate BIP Transistors | 25W | 1 | TO-220AB | ISOLATED | N-CHANNEL | Single | 25W | 28 ns | 6.8A | 600V | 2.6V | POWER CONTROL | SILICON | 16ns | 2.15V | 56 ns | 2.6V @ 15V, 5A | 345 ns | 20V | 6V | 210ns | 480V, 5A, 100 Ω, 15V | 15nC | 27A | 40ns/87ns | 140μJ (on), 120μJ (off) | |||||||||||||||||||||||||||||||||||
 |
IHW30N110R3FKSA1 | Infineon Technologies | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 26 Weeks | Through Hole | Tube | 2015 | yes | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | Lead Free | 3 | TO-247-3 | Through Hole | -40°C~175°C TJ | Standard | e3 | Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 3 | Insulated Gate BIP Transistors | Not Qualified | 333W | 333W | 1 | N-CHANNEL | Single | 60A | 1.1kV | 1.1kV | POWER CONTROL | SILICON | 1.75V @ 15V, 30A | 470 ns | Trench | 20V | 1100V | 6.4V | 600V, 30A, 15 Ω, 15V | 180nC | 90A | -/350ns | 1.15mJ (off) | ||||||||||||||||||||||||||||||||||||||||||
 |
RJH60V3BDPE-00#J3 | Renesas Electronics America | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 16 Weeks | Surface Mount | Tape & Reel (TR) | 2012 | Obsolete | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | 83 | SC-83 | Surface Mount | 150°C TJ | Standard | GULL WING | NOT SPECIFIED | NOT SPECIFIED | RJH60V | 4 | R-PSSO-G2 | Insulated Gate BIP Transistors | 113W | 113W | 1 | COLLECTOR | N-CHANNEL | Single | 600V | 25 ns | 35A | 600V | 2.2V | POWER CONTROL | SILICON | 60 ns | 2.2V @ 15V, 17A | 165 ns | Trench | 30V | 300V, 17A, 5 Ω, 15V | 60nC | 40ns/90ns | 90μJ (on), 300μJ (off) | |||||||||||||||||||||||||||||||||||||||||||
|
FGH40T65SQD-F155 | ON Semiconductor | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 13 Weeks | 2016 | Active | EAR99 | RoHS Compliant | TO-247-3 | compliant | Through Hole | -55°C~175°C TJ | Standard | NOT SPECIFIED | NOT SPECIFIED | 238W | 31.8ns | 2.1V @ 15V, 40A | Trench Field Stop | 650V | 80A | 400V, 10A, 6 Ω, 15V | 80nC | 160A | 16.4ns/86.4ns | 138μJ (on), 52μJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IRG4PC40UDPBF | Infineon Technologies | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 14 Weeks | Through Hole | Bulk | 1998 | Last Time Buy | 1 (Unlimited) | 3 | Through Hole | EAR99 | 15.875mm | ROHS3 Compliant | Lead Free | 40A | No | 3 | TO-247-3 | No SVHC | 24.6mm | 5.3mm | Through Hole | -55°C~150°C TJ | 600V | Standard | Insulated Gate BIP Transistors | 160W | 1 | TO-247AC | COLLECTOR | N-CHANNEL | Single | 160W | 54 ns | 42 ns | 40A | 600V | 600V | 150°C | POWER CONTROL | 110 ns | SILICON | 57ns | 2.15V | 92 ns | 2.1V @ 15V, 20A | 330 ns | 20V | 40A | 6V | 120ns | 480V, 20A, 10 Ω, 15V | 100nC | 160A | 54ns/110ns | 710μJ (on), 350μJ (off) | ||||||||||||||||||||||||||||||||
 |
RJH60F6BDPQ-A0#T0 | Renesas Electronics America | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 16 Weeks | Through Hole | Tube | 2012 | yes | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | 3 | TO-247-3 | Through Hole | 150°C TJ | Standard | SINGLE | NOT SPECIFIED | NOT SPECIFIED | RJH60F | 3 | Insulated Gate BIP Transistors | 297.6W | 297.6W | 1 | SINGLE WITH BUILT-IN DIODE | COLLECTOR | N-CHANNEL | 25 ns | 85A | 600V | 1.75V | POWER CONTROL | SILICON | 138 ns | 1.75V @ 15V, 45A | 205 ns | Trench | 8V | 400V, 30A, 5 Ω, 15V | 58ns/131ns | ||||||||||||||||||||||||||||||||||||||||||||||
|
NGTB25N120IHLWG | ON Semiconductor | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 20 Weeks | LAST SHIPMENTS (Last Updated: 3 days ago) | Tube | 2012 | yes | Obsolete | 1 (Unlimited) | 3 | EAR99 | 16.26mm | RoHS Compliant | Lead Free | No | 3 | TO-247-3 | No SVHC | 21.08mm | 5.3mm | Through Hole | -55°C~150°C TJ | Standard | e3 | Tin (Sn) | 3 | NO | Insulated Gate BIP Transistors | 192W | 192W | 1 | COLLECTOR | N-CHANNEL | Single | 250W | 50A | 1.2kV | 1.2kV | POWER CONTROL | SILICON | 1.85V | 2.3V @ 15V, 25A | 475 ns | 20V | 1200V | 6.5V | 600V, 25A, 10 Ω, 15V | 200nC | 200A | -/235ns | 800μJ (off) | |||||||||||||||||||||||||||||||||||||
 |
NGTG20N60L2TF1G | ON Semiconductor | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 4 Weeks | ACTIVE (Last Updated: 1 day ago) | Through Hole | Tube | 2000 | yes | Active | 1 (Unlimited) | EAR99 | 175°C | -55°C | 15.5mm | ROHS3 Compliant | Lead Free | No | 3 | No SVHC | 26.5mm | 5.5mm | e3 | Tin (Sn) | 3 | 64W | Halogen Free | Single | 64W | 40A | 600V | 600V | 1.65V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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NGTB50N60FLWG | Rochester Electronics | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tube | Obsolete | 3 (168 Hours) | ROHS3 Compliant | TO-247-3 | Through Hole | -55°C~150°C TJ | Standard | 223W | TO-247 | 85ns | 1.9V @ 15V, 50A | Trench Field Stop | 600V | 100A | 400V, 50A, 10Ohm, 15V | 310nC | 200A | 116ns/292ns | 1.1mJ (on), 600μJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRGP6690D-EPBF | Rochester Electronics | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tube | Obsolete | 1 (Unlimited) | ROHS3 Compliant | TO-247-3 | Through Hole | -40°C~175°C TJ | Standard | 483W | TO-247AD | 90ns | 1.95V @ 15V, 75A | 600V | 140A | 400V, 75A, 10Ohm, 15V | 140nC | 225A | 85ns/222ns | 2.4mJ (on), 2.2mJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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HGT1S20N60C3S9A | ON Semiconductor | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 44 Weeks | ACTIVE, NOT REC (Last Updated: 1 day ago) | Surface Mount | Tape & Reel (TR) | yes | Not For New Designs | 1 (Unlimited) | 2 | EAR99 | 10.67mm | ROHS3 Compliant | Lead Free | 45A | 3 | LOW CONDUCTION LOSS | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | not_compliant | 4.83mm | 9.65mm | Surface Mount | 1.31247g | -55°C~150°C TJ | 600V | Standard | 8541.29.00.95 | e3 | Tin (Sn) | GULL WING | 260 | 30 | R-PSSO-G2 | Not Qualified | 164W | 1 | COLLECTOR | N-CHANNEL | Single | 164W | 28 ns | 45A | 600V | 600V | MOTOR CONTROL | 151 ns | SILICON | 1.4V | 52 ns | 1.8V @ 15V, 20A | 388 ns | 15A | 480V, 20A, 10 Ω, 15V | 91nC | 300A | 28ns/151ns | 295μJ (on), 500μJ (off) | |||||||||||||||||||||||||||||||
|
IRGBC30F | Infineon Technologies | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tube | 1996 | Obsolete | 1 (Unlimited) | 3 | EAR99 | Non-RoHS Compliant | FAST | TO-220-3 | Through Hole | -55°C~150°C TJ | Standard | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | SINGLE | NOT SPECIFIED | NOT SPECIFIED | NO | R-PSFM-T3 | Insulated Gate BIP Transistors | Not Qualified | 100W | 1 | SINGLE WITH BUILT-IN DIODE | TO-220AB | N-CHANNEL | 100W | MOTOR CONTROL | SILICON | 2.1V @ 15V, 17A | 20V | 600V | 31A | 5.5V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
|
STGWA40HP65FB | STMicroelectronics | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 20 Weeks | HB2 | Active | TO-247-3 | compliant | Through Hole | -55°C~175°C TJ | Standard | 230W | 140ns | 2V @ 15V, 40A | Trench Field Stop | 650V | 72A | 400V, 40A, 4.7 Ω, 15V | 153nC | 120A | -/125ns | 410μJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IXGX64N60B3D1 | IXYS / Littelfuse | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 30 Weeks | Through Hole | Tube | 2012 | GenX3™ | yes | Active | 1 (Unlimited) | 3 | ROHS3 Compliant | LOW CONDUCTION LOSS | TO-247-3 | Through Hole | Standard | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 3 | R-PSIP-T3 | 150°C | Insulated Gate BIP Transistors | Not Qualified | 460W | 1 | SINGLE WITH BUILT-IN DIODE | COLLECTOR | N-CHANNEL | 35ns | 64A | 600V | 1.8V | POWER CONTROL | SILICON | 64 ns | 1.8V @ 15V, 50A | 326 ns | PT | 20V | 5V | 480V, 50A, 3 Ω, 15V | 168nC | 400A | 25ns/138ns | 1.5mJ (on), 1mJ (off) | |||||||||||||||||||||||||||||||||||||||||
 |
FGH30N120FTDTU | Rochester Electronics | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tube | yes | Obsolete | 3 (168 Hours) | 3 | ROHS3 Compliant | TO-247-3 | unknown | Through Hole | -55°C~150°C TJ | Standard | e3 | MATTE TIN | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 3 | NO | R-PSFM-T3 | COMMERCIAL | 339W | TO-247AB | 730ns | 2V @ 15V, 30A | Trench Field Stop | 1.2V | 60A | 208nC | 90A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRGP4078D-EPBF | Infineon Technologies | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 15 Weeks | Through Hole | Tube | 2013 | Obsolete | 1 (Unlimited) | EAR99 | RoHS Compliant | No | 3 | TO-247-3 | Through Hole | -55°C~175°C TJ | Standard | Insulated Gate BIP Transistors | 278W | N-CHANNEL | Single | 278W | 74A | 600V | 2.2V | 2.2V | 2.2V @ 15V, 50A | Trench | 20V | 6.5V | 400V, 50A, 10 Ω, 15V | 92nC | 150A | -/116ns | 1.1mJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
IXGX35N120B | IXYS / Littelfuse | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 25 Weeks | Through Hole | Tube | 2002 | HiPerFAST™ | yes | Active | 1 (Unlimited) | 3 | ROHS3 Compliant | 3 | TO-247-3 | unknown | Through Hole | -55°C~150°C TJ | Standard | e1 | TIN SILVER COPPER | NOT SPECIFIED | NOT SPECIFIED | IXG*35N120 | 3 | Insulated Gate BIP Transistors | Not Qualified | 350W | 350W | 1 | COLLECTOR | N-CHANNEL | Single | 70A | 1.2kV | 1.2kV | MOTOR CONTROL | SILICON | 3.3V | 86 ns | 3.3V @ 15V, 35A | 660 ns | PT | 20V | 1200V | 5V | 960V, 35A, 5 Ω, 15V | 170nC | 140A | 50ns/180ns | 3.8mJ (off) | ||||||||||||||||||||||||||||||||||||||
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IKW40N60H3FKSA1 | Infineon Technologies | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 16 Weeks | Tube | 2010 | TrenchStop® | yes | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | TO-247-3 | Through Hole | -40°C~175°C TJ | Standard | e3 | Tin (Sn) | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 3 | NO | R-PSFM-T3 | Not Qualified | 306W | 1 | SINGLE WITH BUILT-IN DIODE | N-CHANNEL | 124ns | POWER CONTROL | SILICON | 48 ns | 2.4V @ 15V, 40A | 249 ns | Trench Field Stop | 600V | 80A | 400V, 40A, 7.9 Ω, 15V | 223nC | 160A | 19ns/197ns | 1.68mJ | |||||||||||||||||||||||||||||||||||||||||||||
 |
IGW50N65H5FKSA1 | Infineon Technologies | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 26 Weeks | Through Hole | Tube | 2008 | TrenchStop® | yes | Active | 1 (Unlimited) | EAR99 | ROHS3 Compliant | Lead Free | 3 | TO-247-3 | Unknown | Through Hole | -40°C~175°C TJ | Standard | e3 | Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 305W | Single | 305W | 80A | 650V | 1.65V | 1.65V | 2.1V @ 15V, 50A | 400V, 25A, 12 Ω, 15V | 120nC | 150A | 21ns/180ns | 520μJ (on), 180μJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IXYH16N170CV1 | IXYS / Littelfuse | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 28 Weeks | Tube | XPT™ | yes | Active | 1 (Unlimited) | ROHS3 Compliant | TO-247-3 | unknown | Through Hole | -55°C~175°C TJ | Standard | 310W | 150ns | 3.8V @ 15V, 16A | 1700V | 40A | 850V, 16A, 10 Ω, 15V | 56nC | 100A | 11ns/140ns | 2.1mJ (on), 1.5mJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
IXXX200N65B4 | IXYS / Littelfuse | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 28 Weeks | Through Hole | Tube | 2014 | GenX4™, XPT™ | Active | 1 (Unlimited) | ROHS3 Compliant | TO-247-3 | unknown | Through Hole | -55°C~175°C TJ | Standard | e3 | Matte Tin (Sn) | Insulated Gate BIP Transistors | 1.15kW | 1150W | N-CHANNEL | Single | 1.15kW | 370A | 650V | 1.7V | 1.7V @ 15V, 160A | PT | 20V | 6.5V | 400V, 100A, 1 Ω, 15V | 553nC | 1000A | 62ns/245ns | 4.4mJ (on), 2.2mJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||||||
|
RGT20TM65DGC9 | ROHM Semiconductor | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 17 Weeks | Active | 1 (Unlimited) | 3 | ROHS3 Compliant | TO-220-3 Full Pack | Through Hole | -40°C~175°C TJ | Standard | SINGLE | NOT SPECIFIED | NOT SPECIFIED | NO | R-PSFM-T3 | 25W | 1 | SINGLE WITH BUILT-IN DIODE | TO-220AB | ISOLATED | N-CHANNEL | 42ns | POWER CONTROL | SILICON | 31 ns | 2.1V @ 15V, 10A | 174 ns | Trench Field Stop | 650V | 10A | 400V, 10A, 10 Ω, 15V | 22nC | 30A | 12ns/32ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||
|
AIGW50N65H5XKSA1 | Infineon Technologies | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 39 Weeks | Tube | 2012 | Automotive, AEC-Q101, Trenchstop™ 5 | Active | 1 (Unlimited) | EAR99 | ROHS3 Compliant | TO-247-3 | Through Hole | -40°C~175°C TJ | Standard | NOT SPECIFIED | NOT SPECIFIED | 270W | 2.1V @ 15V, 50A | Trench | 650V | 400V, 25A, 12 Ω, 15V | 1018nC | 150A | 21ns/156ns | 490μJ (on), 140μJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IXGA7N60C | IXYS / Littelfuse | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Surface Mount | Tube | 2003 | HiPerFAST™, Lightspeed™ | yes | Obsolete | 1 (Unlimited) | 3 | RoHS Compliant | 3 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Surface Mount | 1.59999g | -55°C~150°C TJ | Standard | THROUGH-HOLE | NOT SPECIFIED | NOT SPECIFIED | IXG*7N60 | 3 | Insulated Gate BIP Transistors | Not Qualified | 54W | 54W | 1 | TO-220AB | COLLECTOR | N-CHANNEL | Single | 14A | 600V | 600V | POWER CONTROL | SILICON | 2.7V | 25 ns | 2.7V @ 15V, 7A | 205 ns | PT | 20V | 5.5V | 480V, 7A, 22 Ω, 15V | 25nC | 30A | 9ns/65ns | 70μJ (on), 120μJ (off) |
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