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STM32F103C8T6
MFI343S00177
STM32F407VET6
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Items : %s%s

RF MOSFETs Transistors

Additional Feature

ESD PROTECTION
ESD PROTECTION, HIGH RELIABILITY
HGH RELIABILITY
HIGH EFFICIENCY
HIGH RELIABILITY
LOGIC LEVEL COMPATIBLE, AVALANCHE RATED
LOW NOISE
TAPE AND REEL

Avalanche Energy Rating (Eas)

250 mJ
500 mJ

Breakdown Voltage

-25V
-30V
-35V
15V
25V
30V

Case Connection

DRAIN
ISOLATED
SOURCE

Characteristic Impedance

50Ohm

Collector Current-Max (IC)

0.025A

Collector-Emitter Voltage-Max

Color

Orange

Configuration

COMMON SOURCE, 2 ELEMENTS
COMMON SOURCE, 3 ELEMENTS
COMPLEX
SEPARATE, 2 ELEMENTS
SINGLE
SINGLE WITH BUILT-IN DIODE

Construction

COMPONENT

Contact Plating

Copper, Silver, Tin
Gold
Tin

Drain to Source Resistance

100Ohm

Drain-source On Resistance-Max

0.1Ohm
0.28Ohm
0.2Ohm
0.3Ohm
5Ohm

ECCN Code

5A991
5A991
EAR99

Element Configuration

Dual
Single

Fall Time (Typ)

12 ns
13 ns

Feedback Cap-Max (Crss)

0.03 pF
0.035 pF
0.06 pF
0.1 pF
0.8 pF
0.9 pF
1 pF
2.5 pF
5 pF

FET Technology

HETERO-JUNCTION
HIGH ELECTRON MOBILITY
JUNCTION
METAL SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR

Frequency (Max)

1.88GHz
175MHz
2.17GHz
2.2GHz
2.7GHz
500MHz
960MHz

Halogen Free

Halogen Free
Not Halogen Free

Highest Frequency Band

KU B
L B
S B
ULTRA HIGH FREQUENCY B
VERY HIGH FREQUENCY B

HTS Code

8541.21.00.75
8541.21.00.95
8541.29.00.40
8541.29.00.75
8541.29.00.95
8542.33
8542.33.00.01

Input Power-Max (CW)

10dBm
24dBm

JEDEC-95 Code

MO-229
TO-220AB
TO-236AB
TO-261AA
TO-92

JESD-609 Code

Lead Free

Contains Lead
Lead Free

Material

Max Frequency

1.09GHz
1GHz
230MHz
960MHz

Min Operating Temperature

-40°C
-45°C
-55°C
-65°C

Moisture Sensitivity Level (MSL)

1
1 (Unlimited)
2
2 (1 Year)
3
3 (168 Hours)
Not Applicable

Mount

Flanges, Screw
Panel, Screw
Screw
Screw, Surface Mount
Surface Mount
Through Hole

Mounting Feature

SURFACE MOUNT

Nominal Supply Current

10mA

Number of Channels

Number of Elements

Number of Terminals

Operating Mode

DEPLETION MODE
DUAL GATE, DEPLETION MODE
DUAL GATE, ENHANCEMENT MODE
ENHANCEMENT MODE

Operating Supply Voltage

Output Power

125mW
165mW
225mW

Part Status

Active
Discontinued
Last Time Buy
LTB
Not For New Designs
NRND
Obsolete
Unconfirmed

Pbfree Code

icon-pbfree yes
no
yes

Peak Reflow Temperature (Cel)

225
235
240
245
250
260
NOT APPLICABLE
NOT SPECIFIED

Pin Count

Polarity/Channel Type

N-CHANNEL
NPN
P-CHANNEL

Power Dissipation-Max

270W
330W
427W
500W

Power Gain

15.8dB
15dB
16.9dB
16dB
17.5dB

Power Gain-Min (Gp)

10dB
12.5dB
20.5dB
20dB

Pulsed Drain Current-Max (IDM)

Qualification Status

COMMERCIAL
Not Qualified

Radiation Hardening

Reach Compliance Code

compliant
not_compliant
unknown

REACH SVHC

No SVHC

Reference Standard

AEC-Q101
IEC-60134

Resistance

50Ohm

RF/Microwave Device Type

NARROW BAND HIGH POWER
WIDE BAND HIGH POWER
WIDE BAND MEDIUM POWER

Rise Time

RoHS Status

Non-RoHS Compliant
RoHS Compliant
ROHS3 Compliant

Source Url Status Check Date

2013-06-14 00:00:00

Subcategory

FET General Purpose Power
FET General Purpose Powers
FET RF Small Signal
FET RF Small Signals
Other Transistors

Surface Mount

Terminal Form

C BEND
FLAT
GULL WING
NO LEAD
THROUGH-HOLE
UNSPECIFIED

Terminal Position

BOTTOM
DUAL
QUAD
RADIAL
SINGLE
UNSPECIFIED

Termination

SMD/SMT
Through Hole

Test Voltage

Time@Peak Reflow Temperature-Max (s)

30
40
NOT APPLICABLE
NOT SPECIFIED

Transistor Application

AMPLIFIER
SWITCHING

Transistor Element Material

GALLIUM ARSENIDE
GALLIUM NITRIDE
SILICON

Transition Frequency

45000MHz

Turn On Delay Time

7 ns

Turn On Time-Max (ton)

18ns

Turn-Off Delay Time

21 ns

Type

JFET
MOSFET

Reset

Apply

Compare	Image	Name	Manufacturer	Pricing(USD)	Quantity	Weight(Kg)	Size(LxWxH)	Pbfree Code	Moisture Sensitivity Level (MSL)	Number of Terminations	RoHS Status	Voltage - Rated	Current Rating	Additional Feature	Package / Case	Frequency	Operating Mode	JESD-609 Code	Terminal Finish	Terminal Position	Terminal Form	Peak Reflow Temperature (Cel)	Time@Peak Reflow Temperature-Max (s)	Pin Count	Surface Mount	JESD-30 Code	Qualification Status	Gain	Number of Elements	Configuration	Case Connection	Polarity/Channel Type	FET Technology	Transistor Element Material	Drain Current-Max (Abs) (ID)	Current - Test	Voltage - Test	Noise Figure
		MWT-1789SB	Microwave Technology	0.0000	RFQ Min: 1 Mult: 1	0.00000000		yes	3	4	RoHS Compliant	6.5V	440mA	LOW NOISE	SOT-89	500MHz	DEPLETION MODE	e3	Tin (Sn)	SINGLE	FLAT	260	NOT SPECIFIED	4	YES	R-PSSO-F4	Not Qualified	18 dB	1	SINGLE	SOURCE	N-CHANNEL	METAL SEMICONDUCTOR	GALLIUM ARSENIDE	0.35A	440mA	6.5V	1.3 dB

MWT-1789SB Microwave Technology
MWT-1789SB datasheet pdf and Transistors - FETs, MOSFETs - RF product details from Microwave Technology stock available at HK JDW

Price: 0.0000
RFQ

RF MOSFETs Transistors

Additional Feature

Avalanche Energy Rating (Eas)

Base Part Number

Breakdown Voltage

Case Connection

Characteristic Impedance

Collector Current-Max (IC)

Collector-Emitter Voltage-Max

Color

Configuration

Construction

Contact Plating

Continuous Drain Current (ID)

Current - Test

Current Rating

Current Rating (Amps)

Drain Current-Max (Abs) (ID)

Drain to Source Breakdown Voltage

Drain to Source Resistance

Drain to Source Voltage (Vdss)

Drain-source On Resistance-Max

DS Breakdown Voltage-Min

ECCN Code

Element Configuration

Factory Lead Time

Fall Time (Typ)

Feedback Cap-Max (Crss)

FET Technology

Frequency

Frequency (Max)

Gain

Gate to Source Voltage (Vgs)

Halogen Free

Height

Highest Frequency Band

HTS Code

Input Capacitance

Input Power-Max (CW)

JEDEC-95 Code

JESD-30 Code

JESD-609 Code

Lead Free

Length

Lifecycle Status

Material

Max Frequency

Max Operating Temperature

Max Output Power

Max Power Dissipation

Mfr

Min Breakdown Voltage

Min Operating Temperature

Moisture Sensitivity Level (MSL)

Mount

Mounting Feature

Noise Figure

Nominal Supply Current

Number of Channels

Number of Elements

Number of Pins

Number of Terminals

Number of Terminations

Operating Mode

Operating Supply Voltage

Output Power

Package / Case

Packaging

Part Status

Pbfree Code

Peak Reflow Temperature (Cel)

Pin Count

Polarity/Channel Type

Power - Output

Power Dissipation

Power Dissipation Ambient-Max

Power Dissipation-Max

Power Dissipation-Max (Abs)

Power Gain

Power Gain-Min (Gp)