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IGBTs Modules
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IGBT module product filter
Common filter conditions include, manufacturer, configuration, collector maximum current, voltage, pin count, etc.
Contact Plating
- Tin
ECCN Code
- EAR99
Factory Lead Time
- 12 Weeks
- 14 Weeks
- 16 Weeks
Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Not Applicable
Mount
- Panel, Screw
- Screw
Mounting Type
- Chassis Mount
Number of Pins
- 20
- 23
- 24
- 29
- 7
Number of Terminations
- 20
- 23
- 24
- 29
- 35
- 7
Operating Temperature
- -40°C~125°C
- -40°C~125°C TJ
- -40°C~150°C
- -40°C~150°C TJ
Package / Case
- Module
Part Status
- Active
- Not For New Designs
Pbfree Code
- no
- yes
Published
- 2001
- 2002
- 2014
Series
- C
Surface Mount
- NO
Transistor Element Material
- SILICON
Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Datasheet | Factory Lead Time | Lifecycle Status | Mount | Published | Series | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | ECCN Code | Max Operating Temperature | Min Operating Temperature | Length | RoHS Status | Lead Free | Radiation Hardening | Number of Pins | Additional Feature | Package / Case | REACH SVHC | Reach Compliance Code | Height | Width | Mounting Type | Weight | Operating Temperature | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Time@Peak Reflow Temperature-Max (s) | Base Part Number | Pin Count | Surface Mount | JESD-30 Code | Operating Temperature (Max) | Subcategory | Qualification Status | Max Power Dissipation | Power - Max | Number of Elements | Configuration | Case Connection | Halogen Free | Polarity/Channel Type | Power Dissipation-Max (Abs) | Collector Current-Max (IC) | Element Configuration | Power Dissipation | Turn On Delay Time | Input | Power Dissipation-Max | Number of Terminals | Max Collector Current | Collector Emitter Breakdown Voltage | Collector Emitter Voltage (VCEO) | Transistor Application | Turn-Off Delay Time | Transistor Element Material | Input Capacitance | Collector-Emitter Voltage-Max | Current - Collector Cutoff (Max) | Collector Emitter Saturation Voltage | Turn On Time | Vce(on) (Max) @ Vge, Ic | Turn Off Time-Nom (toff) | IGBT Type | NTC Thermistor | Gate-Emitter Voltage-Max | Input Capacitance (Cies) @ Vce | VCEsat-Max | Voltage - Collector Emitter Breakdown (Max) | Current - Collector (Ic) (Max) |
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APTGLQ200H120G | Microsemi | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 36 Weeks | Chassis Mount | 2012 | Active | 1 (Unlimited) | RoHS Compliant | Lead Free | 6 | SP6 | Chassis Mount | -40°C~175°C TJ | Insulated Gate BIP Transistors | 1kW | 1000W | 1 | Full Bridge | 30 ns | Standard | 350A | 1.2kV | 2.4V | 290 ns | 12.3nF | 100μA | 2.4V @ 15V, 200A | Trench Field Stop | No | 20V | 12.3nF @ 25V | 1200V | ||||||||||||||||||||||||||||||||||||||||||||||
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FD300R12KS4 | Infineon | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Screw | yes | 5 | EAR99 | 125°C | -40°C | RoHS Compliant | Lead Free | 5 | UL APPROVED | Module | UPPER | UNSPECIFIED | NOT SPECIFIED | NOT SPECIFIED | 7 | Insulated Gate BIP Transistors | Not Qualified | 1 | ISOLATED | Not Halogen Free | N-CHANNEL | Single | 370A | 1.2kV | POWER CONTROL | 180 ns | 590 ns | 20V | |||||||||||||||||||||||||||||||||||||||||||||||
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6MS16017P43W40383NOSA1 | Infineon Technologies | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 16 Weeks | 2007 | Active | Not Applicable | Non-RoHS Compliant | Contains Lead | Module | Chassis Mount | -25°C~55°C | Three Phase Inverter | Not Halogen Free | Standard | Yes | 1700V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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FD200R12KE3 | Infineon Technologies | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | icon-pbfree yes | EAR99 | RoHS Compliant | compliant | UPPER | UNSPECIFIED | NOT SPECIFIED | NOT SPECIFIED | 5 | NO | R-XUFM-X5 | 150°C | Insulated Gate BIP Transistors | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | ISOLATED | N-CHANNEL | 1040W | 295A | 5 | SILICON | 1200V | 400 ns | 830 ns | 20V | 2.15 V | ||||||||||||||||||||||||||||||||||||||||||||||||||
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APT150GN120JDQ4 | Microsemi | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 29 Weeks | Chassis Mount, Screw | 1999 | yes | Active | 1 (Unlimited) | 4 | EAR99 | 38.2mm | RoHS Compliant | Lead Free | 4 | LOW CONDUCTION LOSS, HIGH RELIABILITY, UL RECOGNIZED | SOT-227-4, miniBLOC | 9.6mm | 25.4mm | Chassis Mount | 30.000004g | -55°C~150°C TJ | UPPER | UNSPECIFIED | 4 | Insulated Gate BIP Transistors | 625W | 625W | 1 | Single | ISOLATED | N-CHANNEL | Standard | 215A | 1.2kV | 1.2kV | POWER CONTROL | SILICON | 9.5nF | 300μA | 1.7V | 120 ns | 2.1V @ 15V, 150A | 955 ns | Trench Field Stop | No | 30V | 9.5nF @ 25V | 2.1 V | 1200V | |||||||||||||||||||||||||||||
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FD200R12PT4B6BOSA1 | Infineon Technologies | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 24 Weeks | 2002 | Active | 1 (Unlimited) | EAR99 | Non-RoHS Compliant | Contains Lead | Module | Chassis Mount | -40°C~150°C | NOT SPECIFIED | NOT SPECIFIED | 1100W | Three Phase Inverter | Not Halogen Free | Standard | 15μA | 2.1V @ 15V, 200A | Trench Field Stop | Yes | 12.5nF @ 25V | 1200V | 300A | |||||||||||||||||||||||||||||||||||||||||||||||||||||
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APTCV60TLM99T3G | Microsemi | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | IN PRODUCTION (Last Updated: 1 month ago) | Chassis Mount, Screw | 2012 | Active | 1 (Unlimited) | 32 | RoHS Compliant | No | 3 | AVALANCHE ENERGY RATED, ULTRA LOW-ON RESISTANCE | SP3 | Chassis Mount | -40°C~175°C TJ | DUAL | UNSPECIFIED | 32 | Insulated Gate BIP Transistors | 90W | 90W | 2 | Three Level Inverter - IGBT, FET | ISOLATED | N-CHANNEL | Standard | 50A | 600V | 1.9V | POWER CONTROL | SILICON | 1.6nF | 250μA | 170 ns | 1.9V @ 15V, 30A | 310 ns | Trench Field Stop | Yes | 20V | 1.6nF @ 25V | ||||||||||||||||||||||||||||||||||||||
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IXYN100N65C3H1 | IXYS / Littelfuse | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 8 Weeks | Chassis, Stud | 2014 | XPT™, GenX3™ | Active | 1 (Unlimited) | ROHS3 Compliant | SOT-227-4, miniBLOC | Chassis, Stud Mount | 38.000013g | -55°C~175°C TJ | 600W | 600W | Single | Standard | 166A | 650V | 2.3V | 4.98nF | 50μA | 1.85V | 2.3V @ 15V, 70A | PT | No | 4.98nF @ 25V | |||||||||||||||||||||||||||||||||||||||||||||||||||
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MITA300RF1700P-PC | IXYS / Littelfuse | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 20 Weeks | Active | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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APTGT50DH60TG | Microsemi | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Chassis Mount | yes | Discontinued | 1 (Unlimited) | 14 | RoHS Compliant | 4 | AVALANCHE RATED | SP4 | Chassis Mount | -40°C~175°C TJ | e1 | TIN SILVER COPPER | UPPER | UNSPECIFIED | NOT SPECIFIED | NOT SPECIFIED | 14 | Not Qualified | 176W | 176W | 2 | Asymmetrical Bridge | ISOLATED | N-CHANNEL | Standard | 80A | 600V | 1.9V | POWER CONTROL | SILICON | 3.15nF | 250μA | 170 ns | 1.9V @ 15V, 50A | 310 ns | Trench Field Stop | Yes | 3.15nF @ 25V | |||||||||||||||||||||||||||||||||||||
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APTGT100A602G | Microsemi | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 22 Weeks | Screw, Through Hole | 2012 | Obsolete | 1 (Unlimited) | EAR99 | RoHS Compliant | 18 | SP2 | Through Hole | -40°C~175°C TJ | 340W | 340W | Half Bridge | Dual | Standard | 150A | 600V | 600V | 6.1nF | 50μA | 1.9V @ 15V, 100A | Trench Field Stop | No | 6.1nF @ 25V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
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FD900R12IP4D | Infineon | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Screw | yes | 1 | 8 | EAR99 | 150°C | -40°C | RoHS Compliant | Contains Lead | 10 | Module | No SVHC | UPPER | UNSPECIFIED | NOT SPECIFIED | NOT SPECIFIED | 8 | R-XUFM-X8 | Insulated Gate BIP Transistors | Not Qualified | 1 | ISOLATED | Not Halogen Free | N-CHANNEL | Single | 5.1kW | 900A | 1.2kV | 1.2kV | POWER CONTROL | 1.7V | 370 ns | 1300 ns | 20V | 2.05 V | |||||||||||||||||||||||||||||||||||||||||
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FT150R12KE3B5BOSA1 | Infineon Technologies | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Active | 1 (Unlimited) | 18 | ROHS3 Compliant | UPPER | UNSPECIFIED | NO | R-XUFM-X18 | 3 | COMMON EMITTER, 3 ELEMENTS WITH BUILT-IN DIODE | ISOLATED | N-CHANNEL | 200A | SILICON | 1200V | 350 ns | 850 ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IFS100B12N3E4PB11BPSA1 | Infineon Technologies | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 16 Weeks | 2015 | Active | 1 (Unlimited) | 34 | EAR99 | ROHS3 Compliant | UL RECOGNIZED | Module | Chassis Mount | -40°C~150°C | UPPER | UNSPECIFIED | NO | R-XUFM-X34 | 515W | 6 | Full Bridge | ISOLATED | N-CHANNEL | Standard | POWER CONTROL | SILICON | 1mA | 210 ns | 2.1V @ 15V, 100A | 610 ns | Trench Field Stop | Yes | 6.2nF @ 25V | 1200V | 150A | |||||||||||||||||||||||||||||||||||||||||||||
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MWI30-06A7 | IXYS / Littelfuse | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 20 Weeks | Chassis Mount, Screw | 2007 | yes | Active | 1 (Unlimited) | 11 | 107.5mm | ROHS3 Compliant | Lead Free | 2 | UL RECOGNIZED | E2 | 17mm | 45mm | Chassis Mount | -40°C~150°C TJ | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | UPPER | UNSPECIFIED | MWI | 17 | R-XUFM-X11 | Insulated Gate BIP Transistors | 140W | 140W | 6 | Three Phase Inverter | ISOLATED | N-CHANNEL | Standard | 45A | 600V | 2.4V | POWER CONTROL | SILICON | 1.6nF | 600μA | 100 ns | 2.4V @ 15V, 30A | 310 ns | NPT | No | 1.6nF @ 25V | |||||||||||||||||||||||||||||||
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APTGT25SK120D1G | Microsemi | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Chassis Mount | yes | Discontinued | 1 (Unlimited) | 7 | RoHS Compliant | D1 | Chassis Mount | e1 | TIN SILVER COPPER | UPPER | UNSPECIFIED | 7 | R-XUFM-X7 | 150°C | 140W | 140W | 1 | Single | ISOLATED | N-CHANNEL | Standard | 40A | 1.2kV | 2.1V | MOTOR CONTROL | SILICON | 1.8nF | 5mA | 280 ns | 2.1V @ 15V, 25A | 830 ns | Trench Field Stop | No | 1.8nF @ 25V | 1200V | |||||||||||||||||||||||||||||||||||||||||
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FF800R12KF4 | Infineon Technologies | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 36 Weeks | Screw | 2012 | no | Active | 1 (Unlimited) | 10 | EAR99 | RoHS Compliant | 10 | Module | Chassis Mount | -40°C~125°C | UPPER | UNSPECIFIED | 10 | Insulated Gate BIP Transistors | 5000W | 2 | 2 Independent | ISOLATED | N-CHANNEL | Dual | 5kW | Standard | 800A | 1.2kV | 1.2kV | SILICON | 16mA | 2.7V | 800 ns | 3.2V @ 15V, 800A | 1150 ns | No | 20V | 55nF @ 25V | 3.2 V | 1200V | |||||||||||||||||||||||||||||||||||||
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APTGT100A60T1G | Microsemi | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 36 Weeks | Chassis Mount, Screw | 2007 | yes | Active | 1 (Unlimited) | 12 | EAR99 | RoHS Compliant | No | 12 | SP1 | Chassis Mount | -40°C~175°C TJ | e1 | TIN SILVER COPPER | UPPER | THROUGH-HOLE | 12 | Insulated Gate BIP Transistors | 340W | 340W | 2 | Half Bridge | ISOLATED | N-CHANNEL | Dual | Standard | 150A | 600V | 600V | MOTOR CONTROL | SILICON | 6.1nF | 250μA | 180 ns | 1.9V @ 15V, 100A | 370 ns | Trench Field Stop | Yes | 20V | 6.1nF @ 25V | 1.9 V | |||||||||||||||||||||||||||||||||
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FS150R12KT3BOSA1 | Infineon Technologies | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 16 Weeks | 2002 | no | Active | Not Applicable | 35 | EAR99 | RoHS Compliant | Contains Lead | Module | Chassis Mount | -40°C~125°C | UPPER | UNSPECIFIED | NOT SPECIFIED | NOT SPECIFIED | 35 | NO | R-XUFM-X35 | Not Qualified | 700W | 6 | Three Phase Inverter | ISOLATED | Not Halogen Free | N-CHANNEL | Standard | SILICON | 5mA | 340 ns | 2.15V @ 15V, 150A | 610 ns | Trench Field Stop | Yes | 10.5nF @ 25V | 1200V | 200A | |||||||||||||||||||||||||||||||||||||||
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F3L50R06W1E3B11BOMA1 | Infineon Technologies | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 16 Weeks | 2002 | Active | Not Applicable | EAR99 | RoHS Compliant | Contains Lead | Module | Chassis Mount | -40°C~150°C | NOT SPECIFIED | NOT SPECIFIED | 175W | Three Phase Inverter | Not Halogen Free | Standard | 1mA | 1.9V @ 15V, 50A | Trench Field Stop | Yes | 3.1nF @ 25V | 600V | 75A | |||||||||||||||||||||||||||||||||||||||||||||||||||||
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DDB6U134N16RRB11BPSA1 | Infineon Technologies | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 16 Weeks | 2006 | Active | 1 (Unlimited) | 19 | EAR99 | ROHS3 Compliant | UPPER | UNSPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NO | R-XUFM-X19 | 150°C | 1 | SINGLE WITH BUILT-IN DIODE, THREE PHASE DIODE BRIDGE AND THERMISTOR | ISOLATED | N-CHANNEL | 70A | POWER CONTROL | SILICON | 1200V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MIXG240W1200PZ-PC | IXYS / Littelfuse | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 20 Weeks | Active | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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FZ1200R12KF5NOSA1 | Infineon Technologies | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 2016 | Obsolete | 1 (Unlimited) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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F4100R12KS4BOSA1 | Infineon Technologies | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 16 Weeks | Active | Not Applicable | 26 | EAR99 | RoHS Compliant | Contains Lead | UL RECOGNIZED | Module | Chassis Mount | -40°C~125°C | UPPER | UNSPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NO | R-XUFM-X26 | 660W | 4 | Three Phase Inverter | ISOLATED | Not Halogen Free | N-CHANNEL | Standard | POWER CONTROL | SILICON | 5mA | 190 ns | 3.75V @ 15V, 100A | 390 ns | Yes | 6.8nF @ 25V | 1200V | 130A | ||||||||||||||||||||||||||||||||||||||||||
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APTGF50A120T1G | Microsemi | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Chassis Mount, Screw | 2012 | yes | Obsolete | 1 (Unlimited) | 12 | EAR99 | RoHS Compliant | 1 | SP1 | Chassis Mount | e1 | TIN SILVER COPPER | UPPER | UNSPECIFIED | NOT SPECIFIED | NOT SPECIFIED | 12 | Insulated Gate BIP Transistors | Not Qualified | 312W | 312W | 2 | Half Bridge | ISOLATED | N-CHANNEL | Dual | Standard | 75A | 1.2kV | 3.7V | MOTOR CONTROL | SILICON | 3.45nF | 250μA | 100 ns | 3.7V @ 15V, 50A | 400 ns | NPT | Yes | 20V | 3.45nF @ 25V | 1200V | |||||||||||||||||||||||||||||||||
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VS-20MT120UFP | Vishay Semiconductor Diodes Division | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 15 Weeks | Chassis Mount, Screw | 2012 | Last Time Buy | 1 (Unlimited) | EAR99 | 63.5mm | ROHS3 Compliant | 16 | 16-MTP Module | 16mm | 33mm | Chassis Mount | -40°C~150°C TJ | 240W | 240W | Full Bridge Inverter | Standard | 40A | 1.2kV | 1.2kV | 3.79nF | 250μA | 4.66V @ 15V, 40A | NPT | No | 3.79nF @ 30V | 1200V | ||||||||||||||||||||||||||||||||||||||||||||||||
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IXGN80N60A2D1 | IXYS / Littelfuse | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Chassis Mount, Screw | 2004 | yes | Obsolete | 1 (Unlimited) | 4 | RoHS Compliant | 4 | UL RECOGNIZED | SOT-227-4, miniBLOC | Chassis Mount | 38.000013g | -55°C~150°C TJ | Nickel (Ni) | UPPER | SOLDER LUG | 4 | 625W | 625W | 1 | Single | ISOLATED | N-CHANNEL | Standard | 160A | 600V | 600V | POWER CONTROL | SILICON | 650μA | 1.35V | 1.35V @ 15V, 80A | No | |||||||||||||||||||||||||||||||||||||||||||
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FB15R06KL4B1BOMA1 | Infineon Technologies | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Last Time Buy | 1 (Unlimited) | 26 | EAR99 | ROHS3 Compliant | UPPER | UNSPECIFIED | NO | R-XUFM-X26 | 150°C | 7 | COMPLEX | ISOLATED | N-CHANNEL | 19A | SILICON | 600V | 71 ns | 249 ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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VS-GT400TH120U | Vishay Semiconductor Diodes Division | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Chassis Mount | 2016 | Obsolete | 1 (Unlimited) | EAR99 | ROHS3 Compliant | Double INT-A-PAK (3 + 8) | Chassis Mount | -40°C~150°C TJ | 2.344kW | 2344W | Half Bridge | Standard | 750A | 1.2kV | 2.35V | 51.2nF | 5mA | 2.35V @ 15V, 400A | Trench | No | 51.2nF @ 30V | 1200V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
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APTCV60HM45RCT3G | Microsemi | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 36 Weeks | IN PRODUCTION (Last Updated: 3 weeks ago) | Chassis Mount | 1999 | Active | 1 (Unlimited) | EAR99 | RoHS Compliant | 3 | SP3 | Chassis Mount | -40°C~175°C TJ | Insulated Gate BIP Transistors | 250W | 250W | 1 | Full Bridge Inverter | Single Phase Bridge Rectifier | 50A | 600V | 1.9V | 3.15nF | 250μA | 1.9V @ 15V, 50A | Trench Field Stop | Yes | 3.15nF @ 25V |
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APTGLQ200H120G Microsemi
APTGLQ200x Series 1200 V 350 A High Speed Trench + Field Stop IGBT4 Power Module
Price: 0.0000
RFQ -
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FD200R12KE3 Infineon Technologies
FD200R12KE3 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies AG stock available at HK JDW
Price: 0.0000
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FD900R12IP4D Infineon
INFINEON FD900R12IP4DIGBT Array & Module Transistor, High Power, N Channel, 900 A, 1.7 V, 5.1 kW, 1.2 kV, Module
Price: 0.0000
RFQ -
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IFS100B12N3E4PB11BPSA1 Infineon Technologies
IFS100B12N3E4PB11BPSA1 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available at HK JDW
Price: 0.0000
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MWI30-06A7 IXYS / Littelfuse
IXYS MWI30-06A7, E 2 3 Phase Bridge IGBT Module, 45 A max, 600 V, Screw Mount
Price: 0.0000
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FF800R12KF4 Infineon Technologies
FF800R12KF4 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available at HK JDW
Price: 0.0000
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F3L50R06W1E3B11BOMA1 Infineon Technologies
Trans IGBT Module N-CH 600V 75A 14-pin EasyPACK
Price: 0.0000
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FZ1200R12KF5NOSA1 Infineon Technologies
FZ1200R12KF5NOSA1 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available at HK JDW
Price: 0.0000
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VS-20MT120UFP Vishay Semiconductor Diodes Division
Trans IGBT Module N-CH 1.2KV 40A 16-Pin MTP
Price: 0.0000
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