Items : %s%s
Arrays BJT Transistors
Contact Plating
- Gold
ECCN Code
- EAR99
Factory Lead Time
- 6 Weeks
- 9 Weeks
JESD-609 Code
- e3
- e4
Lifecycle Status
- ACTIVE (Last Updated: 1 day ago)
- ACTIVE (Last Updated: 2 days ago)
- ACTIVE (Last Updated: 3 days ago)
- ACTIVE (Last Updated: 4 days ago)
- ACTIVE (Last Updated: 5 days ago)
Manufacturer Package Identifier
- D(R-PDSO-G16)
Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- 2 (1 Year)
- 3 (168 Hours)
Mount
- Surface Mount
- Through Hole
Mounting Type
- Surface Mount
- Through Hole
Number of Pins
- 16
- 18
Number of Terminations
- 16
- 18
Operating Temperature
- -20°C~70°C TA
- -40°C~105°C TA
- -40°C~85°C TA
- -55°C~150°C TJ
Package / Case
- 16-DIP (0.300, 7.62mm)
- 16-SOIC (0.154, 3.90mm Width)
- 16-SOIC (0.209, 5.30mm Width)
- 16-TSSOP (0.173, 4.40mm Width)
- 18-DIP (0.300, 7.62mm)
- 18-SOIC (0.295, 7.50mm Width)
Packaging
- Cut Tape (CT)
- Tape & Reel (TR)
- Tube
Part Status
- Active
- Obsolete
Pbfree Code
- yes
Published
- 2017
Series
- Automotive, AEC-Q100
Terminal Finish
- Matte Tin (Sn)
- Nickel/Palladium/Gold (Ni/Pd/Au)
- Tin (Sn)
Transistor Element Material
- SILICON
Weight
- 1.26609g
- 141.690917mg
- 143mg
- 200.686274mg
- 61.887009mg
- 951.693491mg
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Datasheet | Factory Lead Time | Lifecycle Status | Packaging | Published | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | ECCN Code | Length | RoHS Status | Lead Free | Current Rating | Radiation Hardening | Number of Pins | Package / Case | Frequency | Height | Width | Mounting Type | Operating Temperature | Voltage - Rated DC | JESD-609 Code | Terminal Finish | Terminal Form | Peak Reflow Temperature (Cel) | Time@Peak Reflow Temperature-Max (s) | Base Part Number | Pin Count | Surface Mount | Subcategory | Max Power Dissipation | Number of Elements | Polarity | Gain Bandwidth Product | Element Configuration | Power Dissipation | Max Breakdown Voltage | Max Collector Current | Collector Emitter Breakdown Voltage | Collector Emitter Voltage (VCEO) | Transistor Application | Transistor Element Material | Transistor Type | Transition Frequency | Current - Collector Cutoff (Max) | Collector Emitter Saturation Voltage | Collector Base Voltage (VCBO) | Emitter Base Voltage (VEBO) | hFE Min | DC Current Gain (hFE) (Min) @ Ic, Vce | Vce Saturation (Max) @ Ib, Ic |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
MBT6429DW1T1G | ON Semiconductor | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 8 Weeks | ACTIVE (Last Updated: 4 days ago) | Tape & Reel (TR) | 2005 | yes | Active | 1 (Unlimited) | 6 | EAR99 | 2.2mm | ROHS3 Compliant | Lead Free | 200mA | No | 6 | 6-TSSOP, SC-88, SOT-363 | 700MHz | 1mm | 1.35mm | Surface Mount | -55°C~150°C TJ | 40V | e3 | Tin (Sn) | GULL WING | 260 | 40 | MBT6429D | 6 | YES | Other Transistors | 150mW | 2 | NPN | 700MHz | Dual | 150mW | 45V | 200mA | 45V | 45V | AMPLIFIER | SILICON | 2 NPN (Dual) | 100MHz | 100nA | 600mV | 55V | 6V | 500 | 500 @ 100μA 5V | 600mV @ 5mA, 100mA |
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