Items : %s%s
Memory
Contact Plating
- Tin
ECCN Code
- 3A991.B.1.A
- EAR99
Factory Lead Time
- 11 Weeks
- 4 Weeks
- 5 Weeks
- 6 Weeks
- 7 Weeks
- 8 Weeks
JESD-609 Code
- e3
- e4
Manufacturer Package Identifier
- 24AA256-I/P
Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- 1 (Unlimited)
- 3 (168 Hours)
Mount
- Surface Mount
- Through Hole
Mounting Type
- Surface Mount
- Through Hole
Number of Pins
- 28
- 3
- 32
- 5
- 8
Number of Terminations
- 28
- 3
- 32
- 5
- 8
Operating Temperature
- -40°C~85°C TA
- 0°C~70°C TA
Package / Case
- 28-DIP (0.600, 15.24mm)
- 32-DIP (0.600, 15.24mm)
- 32-LCC (J-Lead)
- 32-TFSOP (0.488, 12.40mm Width)
- 8-DIP (0.300, 7.62mm)
- 8-SOIC (0.154, 3.90mm Width)
- 8-SOIC (0.209, 5.30mm Width)
- 8-TSSOP, 8-MSOP (0.118, 3.00mm Width)
- SC-74A, SOT-753
- TO-226-3, TO-92-3 (TO-226AA)
Packaging
- Bulk
- Tape & Reel (TR)
- Tray
- Tube
Part Status
- Active
- Obsolete
Pbfree Code
- yes
Published
- 1995
- 1997
- 2000
- 2002
- 2003
- 2004
- 2005
- 2007
- 2008
- 2009
- 2013
Series
- MoBL®
- SST39 MPF™
Surface Mount
- NO
- YES
Terminal Finish
- Matte Tin (Sn)
- Matte Tin (Sn) - annealed
- Nickel/Palladium/Gold (Ni/Pd/Au)
Termination
- SMD/SMT
- Through Hole
Weight
- 453.59237mg
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Datasheet | Factory Lead Time | Mount | Packaging | Published | Series | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | ECCN Code | Max Operating Temperature | Min Operating Temperature | Operating Supply Voltage | Number of Ports | Length | RoHS Status | Lead Free | Radiation Hardening | Number of Pins | Additional Feature | Package / Case | Interface | Max Supply Voltage | Reach Compliance Code | Min Supply Voltage | Density | Frequency | Height | Width | Thickness | Mounting Type | Operating Temperature | Technology | Operating Mode | Height Seated (Max) | HTS Code | Number of Functions | Nominal Supply Current | Max Frequency | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Supply Voltage | Time@Peak Reflow Temperature-Max (s) | Base Part Number | Pin Count | Temperature Grade | Surface Mount | Terminal Pitch | JESD-30 Code | Supply Voltage-Min (Vsup) | Subcategory | Qualification Status | Power Supplies | Supply Voltage-Max (Vsup) | Ambient Temperature Range High | Max Power Dissipation | Voltage | Supplier Device Package | Output Characteristics | Access Time | Frequency (Max) | Screening Level | Memory Size | Memory Type | Address Bus Width | Supply Current-Max | Voltage - Supply | Organization | Memory Width | Memory Density | Sync/Async | Data Bus Width | Parallel/Serial | Clock Frequency | Standby Current-Max | Access Time (Max) | Word Size | Data Retention Time-Min | Endurance | Write Protection | Write Cycle Time-Max (tWC) | I/O Type | Serial Bus Type | Standby Voltage-Min | Memory Format | Memory Interface | Write Cycle Time - Word, Page |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
.png "MT41K512M16VRN-107 AIT:P") |
MT41K512M16VRN-107 AIT:P | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 11 Weeks | Tray | Automotive, AEC-Q100 | Active | 3 (168 Hours) | ROHS3 Compliant | 96-TFBGA | Surface Mount | -40°C~95°C TC | SDRAM - DDR3L | 20ns | 8Gb 512M x 16 | Volatile | 1.283V~1.45V | 933MHz | DRAM | Parallel | 15ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
AT49BV1614AT-70TI | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tray | 1997 | Obsolete | 3 (168 Hours) | Non-RoHS Compliant | 48-TFSOP (0.724, 18.40mm Width) | Surface Mount | -40°C~85°C TC | AT49BV1614 | 70ns | 16Mb 2M x 8 1M x 16 | Non-Volatile | 2.65V~3.3V | FLASH | Parallel | 50μs | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
CY7C1440SV33-167AXC | Cypress Semiconductor Corp | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tray | 2016 | Obsolete | 3 (168 Hours) | 100 | 20mm | ROHS3 Compliant | 100-LQFP | 14mm | Surface Mount | 0°C~70°C TA | SRAM - Synchronous, SDR | 1.6mm | 8542.32.00.41 | 1 | DUAL | 3.3V | CY7C1440 | YES | 0.65mm | R-PDSO-G100 | 3.135V | 3.6V | 3.4ns | 36Mb 1M x 36 | Volatile | 3.135V~3.6V | 1MX36 | 36 | 37748736 bit | 167MHz | SRAM | Parallel | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
71V3557S80PFG8 | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 12 Weeks | Surface Mount | Tape & Reel | 2009 | yes | Active | 3 (168 Hours) | 100 | 70°C | 0°C | 3.3V | 1 | 20mm | RoHS Compliant | Lead Free | No | 100 | FLOW-THROUGH ARCHITECTURE | TQFP | Parallel | 3.465V | 3.135V | 4.5 Mb | 95MHz | 14mm | 1.4mm | CMOS | 1 | 250mA | e3 | Matte Tin (Sn) - annealed | QUAD | GULL WING | 260 | 3.3V | 30 | 100 | COMMERCIAL | 0.65mm | SRAMs | 3-STATE | 8 ns | RAM, SRAM | 17b | Synchronous | 0.04A | 36b | COMMON | ||||||||||||||||||||||||||||||||||||||||||||
 |
71321LA20PF8 | Renesas Electronics America Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tape & Reel (TR) | Obsolete | 3 (168 Hours) | Non-RoHS Compliant | 64-LQFP | Surface Mount | 0°C~70°C TA | SRAM - Dual Port, Asynchronous | IDT71321 | 64-TQFP (14x14) | 20ns | 16Kb 2K x 8 | Volatile | 4.5V~5.5V | SRAM | Parallel | 20ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
S-25C640A0I-K8T3U3 | ABLIC U.S.A. Inc. | 0.4864 |
Min: 1 Mult: 1 |
0.00000000 | download | 18 Weeks | Tape & Reel (TR) | Active | 1 (Unlimited) | 8 | EAR99 | 2.9mm | RoHS Compliant | 8-WSSOP, 8-MSOP (0.110, 2.80mm Width) | 2.8mm | Surface Mount | -40°C~85°C TA | CMOS | SYNCHRONOUS | 0.8mm | 8542.32.00.51 | 1 | e3 | Tin (Sn) | DUAL | NOT SPECIFIED | 5V | NOT SPECIFIED | 8 | YES | 0.65mm | R-PDSO-G8 | 1.6V | Not Qualified | 5.5V | 64Kb 8K x 8 | Non-Volatile | 1.6V~5.5V | 8KX8 | 8 | 65536 bit | SERIAL | 5MHz | 5ms | SPI | EEPROM | SPI | 5ms | |||||||||||||||||||||||||||||||||||||||||||||||||
 |
IS42S16100H-6BLI-TR | ISSI, Integrated Silicon Solution Inc | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 6 Weeks | Tape & Reel (TR) | Active | 3 (168 Hours) | ROHS3 Compliant | 60-TFBGA | Surface Mount | -40°C~85°C TA | SDRAM | 5.5ns | 16Mb 1M x 16 | Volatile | 3V~3.6V | 166MHz | DRAM | Parallel | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
709379L9PFI | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Surface Mount | 2009 | Active | 85°C | -40°C | 5V | 2 | 14mm | RoHS Compliant | Contains Lead | No | 100 | TQFP | Parallel | 5.5V | 4.5V | 576 kb | 40MHz | 14mm | 1.4mm | 430mA | 20 ns | RAM, SRAM | 15b | Synchronous | 18b | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
25LC160D-E/ST16KVAO | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tube | Automotive, AEC-Q100 | Active | 1 (Unlimited) | 8 | 4.4mm | 8-TSSOP (0.173, 4.40mm Width) | compliant | 3mm | Surface Mount | -40°C~125°C TA | CMOS | SYNCHRONOUS | 1.1mm | 1 | DUAL | 5V | 25LC160D | YES | 0.65mm | R-PDSO-G8 | 4.5V | 5.5V | AEC-Q100; TS 16949 | 16Kb 2K x 8 | Non-Volatile | 2.5V~5.5V | 2KX8 | 8 | 16384 bit | SERIAL | 5MHz | 5ms | SPI | EEPROM | SPI | 5ms | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
71V3558S100PFGI | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 12 Weeks | Surface Mount | 2006 | yes | Active | 3 (168 Hours) | 100 | 85°C | -40°C | 3.3V | 1 | 20mm | RoHS Compliant | Lead Free | No | 100 | TQFP | Parallel | 3.465V | 3.135V | 4.5 Mb | 100MHz | 14mm | 1.4mm | CMOS | 1 | 255mA | e3 | Matte Tin (Sn) - annealed | QUAD | GULL WING | 260 | 3.3V | 30 | 100 | INDUSTRIAL | 0.65mm | SRAMs | 3-STATE | 5 ns | 100MHz | 512kB | RAM, SDR, SRAM | 18b | Synchronous | 0.045A | 18b | COMMON | ||||||||||||||||||||||||||||||||||||||||||||
 |
SST39WF400A-90-4I-M1QE | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tray | 2000 | SST39 MPF™ | Obsolete | 2 (1 Year) | 48 | EAR99 | 1.8V | 6mm | ROHS3 Compliant | Lead Free | No | 48 | 48-WFBGA | 4 Mb | Surface Mount | -40°C~85°C TA | CMOS | 0.73mm | 8542.32.00.51 | 1 | e1 | TIN SILVER COPPER | BOTTOM | 260 | 1.8V | 40 | SST39WF400A | 48 | YES | 0.5mm | 1.7V | 1.95V | 90ns | 4Mb 256K x 16 | Non-Volatile | 18b | 1.65V~1.95V | 256KX16 | 16 | 16b | FLASH | Parallel | 40μs | ||||||||||||||||||||||||||||||||||||||||||||||||
 |
71T75902S75BGG8 | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 8 Weeks | Surface Mount | Tape & Reel | 2005 | yes | Active | 3 (168 Hours) | 119 | 70°C | 0°C | 2.5V | 1 | 14mm | RoHS Compliant | Lead Free | No | 119 | FLOW-THROUGH ARCHITECTURE | BGA | Parallel | 2.625V | 2.375V | 18 Mb | 100MHz | 22mm | 2.15mm | CMOS | 2.36mm | 1 | 275mA | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | BOTTOM | BALL | 260 | 2.5V | 30 | 119 | COMMERCIAL | SRAMs | 3-STATE | 7.5 ns | RAM, SRAM | 20b | Synchronous | 0.04A | 18b | COMMON | 2.38V | |||||||||||||||||||||||||||||||||||||||||||
|
MT53B192M32D1SG-062 WT ES:A TR | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tape & Reel (TR) | Obsolete | 3 (168 Hours) | ROHS3 Compliant | -30°C~85°C TC | SDRAM - Mobile LPDDR4 | 6Gb 192M x 32 | Volatile | 1.1V | 1600MHz | DRAM | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
70V3319S166PRFG | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Surface Mount | Bulk | 2009 | yes | Active | 3 (168 Hours) | 128 | 70°C | 0°C | 3.3V | 2 | 20mm | RoHS Compliant | Lead Free | No | 128 | FLOW-THROUGH OR PIPELINED ARCHITECTURE | TQFP | Parallel | 3.45V | 3.15V | 4.5 Mb | 166MHz | 14mm | 1.4mm | CMOS | 1.6mm | 1 | 500mA | e3 | Matte Tin (Sn) - annealed | QUAD | GULL WING | 260 | 3.3V | 30 | 128 | COMMERCIAL | 0.5mm | SRAMs | 3-STATE | 3.6 ns | 166MHz | 512kB | RAM, SDR, SRAM | 18b | Synchronous | 0.03A | 18b | COMMON | |||||||||||||||||||||||||||||||||||||||||
|
MTFC64GAOAMEA-WT ES TR | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tape & Reel (TR) | Discontinued | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
MT46H64M32LFMA-5 IT:B TR | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tape & Reel (TR) | 2013 | Obsolete | 3 (168 Hours) | ROHS3 Compliant | 168-WFBGA | Surface Mount | -40°C~85°C TA | SDRAM - Mobile LPDDR | MT46H64M32 | 5ns | 2Gb 64M x 32 | Volatile | 1.7V~1.95V | 200MHz | DRAM | Parallel | 15ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
AT24C128-10TI-2.7 | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Surface Mount | Tube | Obsolete | 1 (Unlimited) | 85°C | -40°C | Non-RoHS Compliant | Contains Lead | 8 | 8-TSSOP (0.173, 4.40mm Width) | 2-Wire, I2C, Serial | 5.5V | 2.7V | 128 kb | 1MHz | Surface Mount | -40°C~85°C TA | EEPROM | 3mA | 400kHz | AT24C128 | 8-TSSOP | 550ns | 128Kb 16K x 8 | Non-Volatile | 2.7V~5.5V | 1MHz | EEPROM | I2C | 10ms | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IDT71T75702S75PFG | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 2005 | 3 (168 Hours) | 100 | 3A991.B.2.A | 70°C | 0°C | 20mm | RoHS Compliant | FLOW-THROUGH ARCHITECTURE | LQFP | Parallel | 14mm | CMOS | SYNCHRONOUS | 1.6mm | 8542.32.00.41 | 1 | e3 | MATTE TIN | QUAD | GULL WING | 260 | 2.5V | 30 | 100 | COMMERCIAL | YES | 0.65mm | R-PQFP-G100 | 2.375V | SRAMs | Not Qualified | 2.5V | 2.625V | 3-STATE | RAM, SRAM | 0.275mA | 512KX36 | 36 | 18874368 bit | 100MHz | 0.04A | 7.5 ns | COMMON | 2.38V | |||||||||||||||||||||||||||||||||||||||||||||||
|
MT29F2G16ABBGAH4-AITES:G | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 8 Weeks | Bulk | Active | 3 (168 Hours) | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
AT25320T2-10TC-2.7 | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tube | Obsolete | 1 (Unlimited) | Non-RoHS Compliant | 20-TSSOP (0.173, 4.40mm Width) | Surface Mount | 0°C~70°C TA | AT25320 | 32Kb 4K x 8 | Non-Volatile | 2.7V~5.5V | 3MHz | EEPROM | SPI | 5ms | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
25AA640AT-I/MS16KVAO | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tape & Reel (TR) | Automotive, AEC-Q100 | Active | 2 (1 Year) | 8 | 3mm | 8-TSSOP, 8-MSOP (0.118, 3.00mm Width) | compliant | 3mm | Surface Mount | -40°C~85°C TA | CMOS | SYNCHRONOUS | 1.1mm | 1 | DUAL | 5V | 25AA640A | YES | 0.65mm | S-PDSO-G8 | 4.5V | 5.5V | AEC-Q100; TS 16949 | 64Kb 8K x 8 | Non-Volatile | 1.8V~5.5V | 8KX8 | 8 | 65536 bit | SERIAL | 10MHz | 5ms | SPI | EEPROM | SPI | 5ms | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
70V09L15PFG8 | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Tape & Reel | 2009 | yes | 3 (168 Hours) | 100 | 70°C | 0°C | 3.3V | 2 | 14mm | RoHS Compliant | Lead Free | No | 100 | TQFP | Parallel | 3.6V | 3V | 1 Mb | 14mm | 1.4mm | CMOS | 1 | e3 | Tin (Sn) | QUAD | GULL WING | 260 | 3.3V | 100 | COMMERCIAL | YES | 0.5mm | SRAMs | 3-STATE | 15 ns | 128kB | RAM, SRAM | 34b | 0.003A | COMMON | 3V | |||||||||||||||||||||||||||||||||||||||||||||||||
 |
M25P128-VME6GB | Micron Technology Inc. | 27.0182 |
Min: 1 Mult: 1 |
0.00000000 | download | Surface Mount | Tray | yes | Obsolete | 3 (168 Hours) | 8 | 3.3V | ROHS3 Compliant | No | 8 | 8-VDFN Exposed Pad | 128 Mb | 1mm | Surface Mount | -40°C~85°C TA | FLASH - NOR | 1 | 20mA | DUAL | 260 | 3V | 30 | M25P128 | 8 | 1.27mm | 85°C | 2.7V | 8 ns | 128Mb 16M x 8 | Non-Volatile | 1b | 2.7V~3.6V | 8 | Synchronous | SERIAL | 54MHz | 0.0001A | 8b | 20 | 10000 Write/Erase Cycles | HARDWARE/SOFTWARE | SPI | FLASH | SPI | 15ms, 5ms | |||||||||||||||||||||||||||||||||||||||||||||||
 |
7134LA20J | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Surface Mount | 2013 | no | Active | 3 (168 Hours) | 52 | EAR99 | 70°C | 0°C | 5V | 2 | 19mm | RoHS Compliant | Contains Lead | No | 52 | AUTOMATIC POWER-DOWN; BATTERY BACKUP | PLCC | Parallel | 5.5V | 4.5V | 32 kb | 19mm | 3.63mm | CMOS | 4.57mm | 1 | 240mA | e0 | Tin/Lead (Sn85Pb15) | QUAD | J BEND | 225 | 5V | 52 | COMMERCIAL | SRAMs | 5V | 3-STATE | 20 ns | 4kB | RAM, SDR, SRAM | 24b | 4KX8 | Asynchronous | 0.0015A | 8b | COMMON | 2V | ||||||||||||||||||||||||||||||||||||||||||
 |
CY14B256Q1A-SXIT | Cypress Semiconductor Corp | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Surface Mount | Tape & Reel (TR) | 2008 | yes | Obsolete | 3 (168 Hours) | 8 | 3A991.B.2.A | 3V | ROHS3 Compliant | No | 8 | 8-SOIC (0.154, 3.90mm Width) | SPI, Serial | 256 kb | Surface Mount | -40°C~85°C TA | NVSRAM (Non-Volatile SRAM) | 1.549mm | 1 | 3mA | e4 | NICKEL PALLADIUM GOLD | DUAL | 260 | 3V | 20 | 8 | 1.27mm | 2.7V | SRAMs | 3.6V | 1W | 9 ns | 256Kb 32K x 8 | Non-Volatile | 2.7V~3.6V | 8 | 8b | 40MHz | 0.00015A | 8b | NVSRAM | SPI | ||||||||||||||||||||||||||||||||||||||||||||||||
 |
70V7319S166BF | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Surface Mount | 2009 | no | Active | 3 (168 Hours) | 208 | 70°C | 0°C | 3.3V | 2 | 15mm | RoHS Compliant | Contains Lead | No | 208 | FLOW-THROUGH OR PIPELINED ARCHITECTURE | Parallel | 3.45V | 3.15V | 4 Mb | 166MHz | 15mm | 1.4mm | CMOS | 1 | 790mA | e0 | Tin/Lead (Sn63Pb37) | BOTTOM | BALL | 225 | 3.3V | 208 | COMMERCIAL | 0.8mm | SRAMs | 3-STATE | 12 ns | RAM, SRAM | 18b | Synchronous | 0.03A | 18b | COMMON | |||||||||||||||||||||||||||||||||||||||||||||||
 |
7025L35J8 | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Surface Mount | 2008 | no | Active | 1 (Unlimited) | 84 | EAR99 | 70°C | 0°C | 5V | 2 | 29.21mm | RoHS Compliant | Contains Lead | No | 84 | INTERRUPT FLAG; AUTOMATIC POWER-DOWN; SEMAPHORE; BATTERY BACKUP | PLCC | Parallel | 5.5V | 4.5V | 128 kb | 29.21mm | 3.63mm | CMOS | 4.57mm | 1 | 210mA | e0 | Tin/Lead (Sn85Pb15) | QUAD | J BEND | 225 | 5V | 84 | COMMERCIAL | SRAMs | 5V | 3-STATE | 35 ns | 16kB | RAM, SDR, SRAM | 13b | 8KX16 | Asynchronous | 0.0015A | 16b | COMMON | 2V | ||||||||||||||||||||||||||||||||||||||||||
 |
CY7C1472V25-250BZC | Cypress Semiconductor Corp | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Surface Mount | Tray | 2006 | NoBL™ | Obsolete | 3 (168 Hours) | 165 | 2.5V | 2 | 17mm | Non-RoHS Compliant | Contains Lead | 165 | PIPELINED ARCHITECTURE | 165-LBGA | not_compliant | 72 Mb | Surface Mount | 0°C~70°C TA | SRAM - Synchronous, SDR | 1.4mm | 1 | 450mA | e0 | Tin/Lead (Sn/Pb) | BOTTOM | 220 | 2.5V | NOT SPECIFIED | CY7C1472 | 165 | 1mm | Not Qualified | 3-STATE | 3ns | 72Mb 4M x 18 | Volatile | 22b | 2.375V~2.625V | 4MX18 | 18 | Synchronous | 250MHz | 18b | COMMON | SRAM | Parallel | ||||||||||||||||||||||||||||||||||||||||||||||
|
71V016SA10BFG | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 12 Weeks | Surface Mount | 2011 | yes | Active | 3 (168 Hours) | 48 | 70°C | 0°C | 3.3V | 1 | 7mm | RoHS Compliant | Lead Free | No | 48 | Parallel | 3.6V | 3.15V | 1 Mb | 7mm | 1.4mm | CMOS | 1 | 160mA | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | BOTTOM | BALL | 260 | 3.3V | 30 | 48 | COMMERCIAL | 0.75mm | SRAMs | 3-STATE | 10 ns | 128kB | RAM, SDR, SRAM - Asynchronous | 16b | Asynchronous | 16b | COMMON | ||||||||||||||||||||||||||||||||||||||||||||||||
 |
71T75902S85BGG | Integrated Device Technology (IDT) | 38.8567 |
Min: 1 Mult: 1 |
0.00000000 | download | 8 Weeks | Surface Mount | 2005 | yes | Active | 3 (168 Hours) | 119 | 70°C | 0°C | 2.5V | 1 | 14mm | RoHS Compliant | Lead Free | No | 119 | FLOW-THROUGH ARCHITECTURE | BGA | Parallel | 2.625V | 2.375V | 18 Mb | 91MHz | 22mm | 2.15mm | CMOS | 2.36mm | 1 | 225mA | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | BOTTOM | BALL | 260 | 2.5V | 30 | 119 | INDUSTRIAL | SRAMs | 3-STATE | 8.5 ns | 100MHz | 2.3MB | RAM, SDR, SRAM | 20b | Synchronous | 0.04A | 18b | COMMON | 2.38V |
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MT41K512M16VRN-107 AIT:P Micron Technology Inc.
Automotive, AEC-Q100 Memory IC Automotive, AEC-Q100 Series
Price: 0.0000
RFQ -
-
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71V3557S80PFG8 Integrated Device Technology (IDT)
Surface Mount 100 Pin Memory IC 4.5 Mb kb 20mm mm 250mA mA 36b b
Price: 0.0000
RFQ -
-
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709379L9PFI Integrated Device Technology (IDT)
Surface Mount Memory IC 576 kb kb 14mm mm 430mA mA 18b b
Price: 0.0000
RFQ -
25LC160D-E/ST16KVAO Microchip Technology
Automotive, AEC-Q100 Memory IC Automotive, AEC-Q100 Series 25LC160D 4.4mm mm
Price: 0.0000
RFQ -
71V3558S100PFGI Integrated Device Technology (IDT)
Surface Mount 100 Pin Memory IC 4.5 Mb kb 20mm mm 255mA mA 18b b
Price: 0.0000
RFQ -
SST39WF400A-90-4I-M1QE Microchip Technology
SST39 MPF™ 48 Pin Memory IC SST39 MPF™ Series SST39WF400A 4 Mb kb 6mm mm
Price: 0.0000
RFQ -
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AT24C128-10TI-2.7 Microchip Technology
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