Items : %s%s
Memory
Contact Plating
- Tin
ECCN Code
- 3A991.B.1.A
- EAR99
Factory Lead Time
- 11 Weeks
- 4 Weeks
- 5 Weeks
- 6 Weeks
- 7 Weeks
- 8 Weeks
JESD-609 Code
- e3
- e4
Manufacturer Package Identifier
- 24AA256-I/P
Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- 1 (Unlimited)
- 3 (168 Hours)
Mount
- Surface Mount
- Through Hole
Mounting Type
- Surface Mount
- Through Hole
Number of Pins
- 28
- 3
- 32
- 5
- 8
Number of Terminations
- 28
- 3
- 32
- 5
- 8
Operating Temperature
- -40°C~85°C TA
- 0°C~70°C TA
Package / Case
- 28-DIP (0.600, 15.24mm)
- 32-DIP (0.600, 15.24mm)
- 32-LCC (J-Lead)
- 32-TFSOP (0.488, 12.40mm Width)
- 8-DIP (0.300, 7.62mm)
- 8-SOIC (0.154, 3.90mm Width)
- 8-SOIC (0.209, 5.30mm Width)
- 8-TSSOP, 8-MSOP (0.118, 3.00mm Width)
- SC-74A, SOT-753
- TO-226-3, TO-92-3 (TO-226AA)
Packaging
- Bulk
- Tape & Reel (TR)
- Tray
- Tube
Part Status
- Active
- Obsolete
Pbfree Code
- yes
Published
- 1995
- 1997
- 2000
- 2002
- 2003
- 2004
- 2005
- 2007
- 2008
- 2009
- 2013
Series
- MoBL®
- SST39 MPF™
Surface Mount
- NO
- YES
Terminal Finish
- Matte Tin (Sn)
- Matte Tin (Sn) - annealed
- Nickel/Palladium/Gold (Ni/Pd/Au)
Termination
- SMD/SMT
- Through Hole
Weight
- 453.59237mg
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Datasheet | Factory Lead Time | Mount | Packaging | Published | Series | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | ECCN Code | Max Operating Temperature | Min Operating Temperature | Operating Supply Voltage | Number of Ports | Length | RoHS Status | Lead Free | Contact Plating | Radiation Hardening | Number of Pins | Additional Feature | Package / Case | Interface | Max Supply Voltage | REACH SVHC | Reach Compliance Code | Min Supply Voltage | Density | Frequency | Height | Width | Thickness | Mounting Type | Operating Temperature | Technology | Operating Supply Current | Operating Mode | Height Seated (Max) | HTS Code | Number of Functions | Nominal Supply Current | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Supply Voltage | Time@Peak Reflow Temperature-Max (s) | Base Part Number | Pin Count | Temperature Grade | Surface Mount | Terminal Pitch | JESD-30 Code | Supply Voltage-Min (Vsup) | Subcategory | Qualification Status | Power Supplies | Supply Voltage-Max (Vsup) | Supplier Device Package | Output Characteristics | Access Time | Screening Level | Memory Size | Memory Type | Address Bus Width | Supply Current-Max | Voltage - Supply | Organization | Memory Width | Memory Density | Sync/Async | Data Bus Width | Parallel/Serial | Clock Frequency | Standby Current-Max | Access Time (Max) | Word Size | Alternate Memory Width | Data Retention Time-Min | Endurance | Write Protection | Write Cycle Time-Max (tWC) | I/O Type | Programming Voltage | Data Polling | Toggle Bit | Command User Interface | Number of Sectors/Size | Page Size | Ready/Busy | Common Flash Interface | Serial Bus Type | I2C Control Byte | Refresh Cycles | Self Refresh | Standby Voltage-Min | Memory Format | Memory Interface | Write Cycle Time - Word, Page | Sector Size |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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EM6HC16EWKG-10H | Etron Technology, Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 4 Weeks | Tape & Reel (TR) | Active | 3 (168 Hours) | 96-VFBGA | Surface Mount | 0°C~95°C TC | SDRAM - DDR3 | 20ns | 1Gb 64M x 16 | Volatile | 1.283V~1.45V | 933MHz | DRAM | Parallel | 15ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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CYDC064B16-55AXI | Rochester Electronics, LLC | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tray | yes | Obsolete | 3 (168 Hours) | 100 | 14mm | ROHS3 Compliant | ALSO OPERATES AT 2.5V AND 3V SUPPLY | 100-LQFP | unknown | 14mm | Surface Mount | -40°C~85°C TA | SRAM - Dual Port, MoBL | ASYNCHRONOUS | 1.6mm | 1 | e3 | MATTE TIN | QUAD | 260 | 1.8V | 20 | 100 | YES | 0.5mm | S-PQFP-G100 | 1.7V | COMMERCIAL | 1.9V | 64Kb 4K x 16 | Volatile | 1.7V~1.9V 2.4V~2.6V 3V~3.6V | 4KX16 | 16 | 65536 bit | 55 ns | SRAM | Parallel | 55ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IS41LV16100B-50TLI | ISSI, Integrated Silicon Solution Inc | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Surface Mount | Tray | yes | Obsolete | 2 (1 Year) | 44 | EAR99 | 3.3V | 1 | 20.95mm | RoHS Compliant | 44 | RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH | 44-TSOP (0.400, 10.16mm Width) | 16 Mb | Surface Mount | -40°C~85°C TA | DRAM - EDO | ASYNCHRONOUS | 1.2mm | 8542.32.00.02 | 1 | 180mA | e3 | Matte Tin (Sn) - annealed | DUAL | 260 | 3.3V | 10 | 50 | 0.8mm | 3V | Not Qualified | 3.6V | 3-STATE | 25ns | 16Mb 1M x 16 | Volatile | 10b | 3V~3.6V | 1MX16 | 16 | 16b | 0.002A | COMMON | 1024 | NO | DRAM | Parallel | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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EM63A165BM-5IH | Etron Technology, Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 4 Weeks | Tape & Reel (TR) | Active | 3 (168 Hours) | 54 | EAR99 | 1 | 8mm | RoHS Compliant | AUTO/SELF REFRESH | 54-TFBGA | compliant | 8mm | Surface Mount | -40°C~85°C TA | SDRAM | SYNCHRONOUS | 1.2mm | 8542.32.00.24 | 1 | BOTTOM | NOT SPECIFIED | 3.3V | NOT SPECIFIED | YES | 0.8mm | S-PBGA-B54 | 3V | 3.6V | 4.5ns | 256Mb 16M x 16 | Volatile | 3V~3.6V | 16MX16 | 16 | 268435456 bit | 200MHz | DRAM | Parallel | 10ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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LH5164A-10LF | Sharp Microelectronics | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Through Hole | Tube | 1997 | Obsolete | 1 (Unlimited) | 28 | 5V | 1 | 36mm | RoHS Compliant | Lead Free | 28 | 28-DIP (0.600, 15.24mm) | unknown | 64 kb | 100GHz | Through Hole | -10°C~70°C TA | CMOS | 5.2mm | 1 | 45mA | DUAL | NOT SPECIFIED | 5V | NOT SPECIFIED | 2.54mm | Not Qualified | 64Kb 8K x 8 | Volatile | 13b | 4.5V~5.5V | 8KX8 | 8 | Asynchronous | 8b | SRAM | Parallel | 100ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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AT25160B-CUL-T | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tape & Reel (TR) | Active | 3 (168 Hours) | 8 | 2mm | ROHS3 Compliant | 8-VFBGA | 1.5mm | Surface Mount | -40°C~85°C TA | CMOS | SYNCHRONOUS | 0.85mm | 1 | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | BOTTOM | 2.5V | YES | 0.5mm | R-PBGA-B8 | 1.8V | Not Qualified | 2/5V | 5.5V | 16Kb 2K x 8 | Non-Volatile | 0.01mA | 1.8V~5.5V | 2KX8 | 8 | 16384 bit | SERIAL | 20MHz | 100 | 1000000 Write/Erase Cycles | HARDWARE/SOFTWARE | 5ms | SPI | EEPROM | SPI | 5ms | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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25LC640A-E/SN | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 3 Weeks | Surface Mount | Tube | 2008 | yes | Active | 1 (Unlimited) | 8 | EAR99 | 5V | 4.9mm | ROHS3 Compliant | Lead Free | No | 8 | 8-SOIC (0.154, 3.90mm Width) | SPI, Serial | No SVHC | 64 kb | 1.5mm | 3.9mm | Surface Mount | -40°C~125°C TA | CMOS | 1 | 5mA | e3 | Matte Tin (Sn) | DUAL | 260 | 5V | 40 | 25LC640A | 8 | 1.27mm | TOTEM POLE | 100 ns | 64Kb 8K x 8 | Non-Volatile | 2.5V~5.5V | 10MHz | 0.000005A | 200 | 1000000 Write/Erase Cycles | HARDWARE/SOFTWARE | 5ms | SPI | EEPROM | SPI | 5ms | |||||||||||||||||||||||||||||||||||||||||||||||||||||
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MT29F1G08ABBEAH4-AITX:E | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 3 Weeks | Tray | Last Time Buy | 63 | 11mm | RoHS Compliant | 63-VFBGA | 9mm | Surface Mount | -40°C~85°C TA | FLASH - NAND | ASYNCHRONOUS | 1mm | 1 | BOTTOM | NOT SPECIFIED | 1.8V | NOT SPECIFIED | YES | 0.8mm | R-PBGA-B63 | 1.7V | 1.95V | 1Gb 128M x 8 | Non-Volatile | 1.7V~1.95V | 128MX8 | 8 | 1073741824 bit | 1.8V | FLASH | Parallel | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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AT29BV010A-25JI | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tube | 1997 | Obsolete | 2 (1 Year) | Non-RoHS Compliant | 32-LCC (J-Lead) | Surface Mount | -40°C~85°C TC | FLASH | AT29BV010 | 32-PLCC (13.97x11.43) | 250ns | 1Mb 128K x 8 | Non-Volatile | 2.7V~3.6V | FLASH | Parallel | 20ms | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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AT25320N-10SC | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tube | 2001 | Obsolete | 1 (Unlimited) | Non-RoHS Compliant | 8-SOIC (0.154, 3.90mm Width) | Surface Mount | 0°C~70°C TA | EEPROM | AT25320 | 8-SOIC | 32Kb 4K x 8 | Non-Volatile | 4.5V~5.5V | 3MHz | EEPROM | SPI | 5ms | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MT29E4T08CTHBBM5-3:B TR | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tape & Reel (TR) | Not For New Designs | 3 (168 Hours) | ROHS3 Compliant | 0°C~70°C TA | FLASH - NAND | 4Tb 512G x 8 | Non-Volatile | 2.5V~3.6V | 333MHz | FLASH | Parallel | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| S29GL256P10FFI012 | Cypress Semiconductor Corp | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 16 Weeks | Tape & Reel (TR) | 2003 | GL-P | Active | 3 (168 Hours) | 64 | 13mm | ROHS3 Compliant | No | 64 | 64-LBGA | 256 Mb | 11mm | Surface Mount | -40°C~85°C TA | FLASH - NOR | 1.4mm | 8542.32.00.51 | 1 | e1 | Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5) | BOTTOM | 260 | 3V | 40 | YES | 1mm | 2.7V | 3/3.3V | 3.6V | 256Mb 32M x 8 | Non-Volatile | 0.11mA | 2.7V~3.6V | 256MX1 | 1 | 0.000005A | 100 ns | 8 | 3V | YES | YES | YES | 256 | 8/16words | YES | YES | FLASH | Parallel | 100ns | 128K | |||||||||||||||||||||||||||||||||||||||||||||||||||||
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AT28C010-25EM/883 | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Surface Mount | Tube | no | Active | 3 (168 Hours) | 32 | 5V | 13.97mm | Non-RoHS Compliant | Contains Lead | No | 32 | AUTOMATIC WRITE; DATA RETENTION: 10 YEARS | 32-CLCC | 1 Mb | 250GHz | 11.43mm | Surface Mount | -55°C~125°C TC | CMOS | 2.54mm | 1 | 80mA | e0 | Tin/Lead (Sn/Pb) | QUAD | 240 | 5V | 30 | AT28C010 | 1.27mm | 5V | 3-STATE | 250ns | MIL-STD-883 | 1Mb 128K x 8 | Non-Volatile | 4.5V~5.5V | 128KX8 | 8 | 0.0003A | 10000 Write/Erase Cycles | 10ms | 5V | YES | YES | NO | 128words | EEPROM | Parallel | 10ms | ||||||||||||||||||||||||||||||||||||||||||||||||||||
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MT28F640J3FS-115 MET | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tray | 2005 | Obsolete | 2 (1 Year) | 64 | 3A991.B.1.A | 13mm | Non-RoHS Compliant | 64-FBGA | not_compliant | 10mm | Surface Mount | -40°C~85°C TA | CMOS | ASYNCHRONOUS | 1.2mm | 8542.32.00.51 | 1 | e0 | TIN LEAD SILVER | BOTTOM | 235 | 3V | 30 | MT28F640J3 | 64 | YES | 1mm | R-PBGA-B64 | 2.7V | Not Qualified | 3/3.3V | 3.6V | 115ns | 64Mb 8M x 8 4M x 16 | Non-Volatile | 0.08mA | 2.7V~3.6V | 4MX16 | 16 | 67108864 bit | 0.00012A | 8 | 2.7V | NO | NO | YES | 64 | 4/8words | YES | YES | FLASH | Parallel | 128K | |||||||||||||||||||||||||||||||||||||||||||||||||
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MT46V128M4TG-6T:F TR | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tape & Reel (TR) | 2011 | Obsolete | 4 (72 Hours) | Non-RoHS Compliant | 66-TSSOP (0.400, 10.16mm Width) | Surface Mount | 0°C~70°C TA | SDRAM - DDR | MT46V128M4 | 66-TSOP | 700ps | 512Mb 128M x 4 | Volatile | 2.3V~2.7V | 167MHz | DRAM | Parallel | 15ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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47L16T-E/SN | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 10 Weeks | Tape & Reel (TR) | Active | 1 (Unlimited) | 8 | 4.9mm | ROHS3 Compliant | 8-SOIC (0.154, 3.90mm Width) | 3.9mm | Surface Mount | -40°C~125°C TA | EEPROM, SRAM | SYNCHRONOUS | 1.75mm | 1 | e3 | Matte Tin (Sn) - annealed | DUAL | 260 | 3V | 40 | 47L16 | YES | 1.27mm | R-PDSO-G8 | 2.7V | 3.6V | 400ns | 16Kb 2K x 8 | Non-Volatile | 2.7V~3.6V | 2KX8 | 8 | 16384 bit | 1MHz | EERAM | I2C | 1ms | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IDT71V65803S100PFI8 | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tape & Reel (TR) | 2015 | 3 (168 Hours) | 100 | 3A991.B.2.A | 85°C | -40°C | 20mm | Non-RoHS Compliant | PIPELINED ARCHITECTURE | LQFP | Parallel | not_compliant | 100MHz | 14mm | CMOS | SYNCHRONOUS | 1.6mm | 8542.32.00.41 | 1 | e0 | Tin/Lead (Sn85Pb15) | QUAD | GULL WING | 240 | 3.3V | 20 | 100 | INDUSTRIAL | YES | 0.65mm | R-PQFP-G100 | 3.135V | SRAMs | Not Qualified | 3.3V | 3.465V | 3-STATE | RAM, SRAM | 0.27mA | 512KX18 | 18 | 9437184 bit | 0.06A | 5 ns | COMMON | 3.14V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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AT28LV64B-25SC | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tube | 2001 | Obsolete | 2 (1 Year) | Non-RoHS Compliant | 28-SOIC (0.295, 7.50mm Width) | Surface Mount | 0°C~70°C TC | EEPROM | AT28LV64 | 28-SOIC | 250ns | 64Kb 8K x 8 | Non-Volatile | 3V~3.6V | EEPROM | Parallel | 10ms | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MT52L256M32D1V01MWC2 MS | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 12 Weeks | Bulk | Active | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| S25FL129P0XMFI001 | Cypress Semiconductor Corp | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 11 Weeks | Surface Mount | Tube | 2015 | FL-P | Obsolete | 3 (168 Hours) | 16 | 3A991.B.1.A | 10.3mm | ROHS3 Compliant | No | 16 | 16-SOIC (0.295, 7.50mm Width) | SPI, Serial | No SVHC | 128 Mb | Surface Mount | -40°C~85°C TA | FLASH - NOR | 2.65mm | 8542.32.00.51 | 1 | 38mA | e3 | Matte Tin (Sn) | DUAL | 3V | 1.27mm | 2.7V | 3/3.3V | 3.6V | 8 ns | 128Mb 16M x 8 | Non-Volatile | 1b | 2.7V~3.6V | 128MX1 | 1 | Synchronous | 8b | 104MHz | 0.00001A | 1b | 20 | 100000 Write/Erase Cycles | HARDWARE/SOFTWARE | 50ms | 3V | 256B | SPI | FLASH | SPI - Quad I/O | 5μs, 3ms | |||||||||||||||||||||||||||||||||||||||||||||||||||
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EM6GC08EWUG-10H | Etron Technology, Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 4 Weeks | Tape & Reel (TR) | Active | 3 (168 Hours) | 78-VFBGA | Surface Mount | 0°C~95°C TC | SDRAM - DDR3 | 20ns | 1Gb 128M x 8 | Volatile | 1.425V~1.575V | 933MHz | DRAM | Parallel | 15ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IS61NVP51236-250B3I-TR | ISSI, Integrated Silicon Solution Inc | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tape & Reel (TR) | Active | 3 (168 Hours) | ROHS3 Compliant | 165-TBGA | Surface Mount | -40°C~85°C TA | SRAM - Synchronous, SDR | 2.6ns | 18Mb 512K x 36 | Volatile | 2.375V~2.625V | 250MHz | SRAM | Parallel | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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70V631S12BC | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Surface Mount | Bulk | 2009 | no | Active | 3 (168 Hours) | 256 | 70°C | 0°C | 3.3V | 2 | 17mm | RoHS Compliant | Contains Lead | No | 256 | Parallel | 3.45V | 3.15V | 4.5 Mb | 17mm | 1.4mm | CMOS | 1.7mm | 1 | 465mA | e0 | Tin/Lead (Sn63Pb37) | BOTTOM | BALL | 225 | 3.3V | 256 | COMMERCIAL | 1mm | SRAMs | 3-STATE | 12 ns | 512kB | RAM, SDR, SRAM | 18b | Asynchronous | 0.015A | 18b | COMMON | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MT29RZ4C4DZZMGGM-18W.80U TR | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tape & Reel (TR) | Obsolete | 3 (168 Hours) | ROHS3 Compliant | -25°C~85°C TA | FLASH - NAND, DRAM - LPDDR2 | 4Gb 256M x 16 N 4G 128M x 32 LPDDR2 | Non-Volatile | 1.8V | 533MHz | FLASH, RAM | Parallel | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BR24C02-DW6TP | ROHM Semiconductor | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 8 Weeks | Surface Mount | Tape & Reel (TR) | 2005 | yes | Not For New Designs | 1 (Unlimited) | 8 | 5V | 4.4mm | ROHS3 Compliant | Copper, Tin | 8 | 8-TSSOP (0.173, 4.40mm Width) | 2-Wire, I2C, Serial | 2 kb | 3mm | Surface Mount | -40°C~85°C TA | CMOS | SYNCHRONOUS | 1.2mm | 1 | DUAL | NOT SPECIFIED | 5V | NOT SPECIFIED | BR24C02 | 8 | 0.65mm | Not Qualified | 5V | 900 ns | 2Kb 256 x 8 | Non-Volatile | 0.002mA | 4.5V~5.5V | 2KX1 | 1 | 400kHz | 0.000001A | 40 | 1000000 Write/Erase Cycles | HARDWARE | 5ms | I2C | 1010DDDR | EEPROM | I2C | 5ms | |||||||||||||||||||||||||||||||||||||||||||||||||||||
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BQ4015YMA-70 | Texas Instruments | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Through Hole | Tube | no | Obsolete | 1 (Unlimited) | 32 | 3A991.B.2.A | 5V | 42.8mm | ROHS3 Compliant | Contains Lead | Tin | No | 32 | 32-DIP Module (0.61, 15.49mm) | 4 Mb | 70GHz | 9.4mm | 18.42mm | Through Hole | 0°C~70°C TA | NVSRAM (Non-Volatile SRAM) | 50mA | 1 | 50mA | DUAL | 5V | BQ4015 | 2.54mm | SRAMs | 5V | 4Mb 512K x 8 | Non-Volatile | 4.5V~5.5V | 512KX8 | 8b | 0.001A | 70 ns | 8b | NVSRAM | Parallel | 70ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BQ4015YMA-85 | Texas Instruments | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Through Hole | Tube | no | Obsolete | 1 (Unlimited) | 32 | 3A991.B.2.A | 5V | ROHS3 Compliant | Contains Lead | No | 32 | 32-DIP Module (0.61, 15.49mm) | 4 Mb | 85GHz | Through Hole | 0°C~70°C TA | NVSRAM (Non-Volatile SRAM) | 1 | 50mA | DUAL | 5V | BQ4015 | 2.54mm | SRAMs | 5V | 4Mb 512K x 8 | Non-Volatile | 4.5V~5.5V | 512KX8 | 8 | 8b | 0.001A | 85 ns | 8b | NVSRAM | Parallel | 85ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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CAT28C64BH1390 | ON Semiconductor | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tray | 2007 | Obsolete | 2 (1 Year) | 28 | EAR99 | 11.8mm | RoHS Compliant | 28-TSSOP (0.465, 11.80mm Width) | 8mm | Surface Mount | 0°C~70°C TA | CMOS | ASYNCHRONOUS | 1.2mm | 8542.32.00.51 | 1 | e3 | MATTE TIN | DUAL | 5V | CAT28C64B | 28 | YES | 0.55mm | R-PDSO-G28 | 4.5V | Not Qualified | 5V | 5.5V | 90ns | 64Kb 8K x 8 | Non-Volatile | 0.03mA | 4.5V~5.5V | 8KX8 | 8 | 65536 bit | 0.0001A | 100000 Write/Erase Cycles | 5ms | 5V | YES | YES | NO | 32words | EEPROM | Parallel | 5ms | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
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70V3589S166BFG8 | Renesas Electronics America Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 17 Weeks | Tape & Reel (TR) | Active | 3 (168 Hours) | ROHS3 Compliant | 208-LFBGA | Surface Mount | 0°C~70°C TA | SRAM - Dual Port, Synchronous | IDT70V3589 | 3.6ns | 2Mb 64K x 36 | Volatile | 3.15V~3.45V | 166MHz | SRAM | Parallel | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| S29GL128P90FACR20 | Cypress Semiconductor Corp | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tray | GL-P | Obsolete | 3 (168 Hours) | 64 | 3A991.B.1.A | 13mm | ROHS3 Compliant | 64 | 64-LBGA | 11mm | Surface Mount | 0°C~70°C TA | FLASH - NOR | ASYNCHRONOUS | 1.4mm | 8542.32.00.51 | 1 | e0 | Tin/Lead (Sn/Pb) | BOTTOM | 3.3V | YES | 1mm | 3V | Not Qualified | 3.3V | 3.6V | 128Mb 16M x 8 | Non-Volatile | 0.11mA | 3V~3.6V | 128MX1 | 1 | 134217728 bit | 0.000005A | 90 ns | 8 | 3V | YES | YES | YES | 128 | 8/16words | YES | YES | FLASH | Parallel | 90ns | 128K |
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IS41LV16100B-50TLI ISSI, Integrated Silicon Solution Inc
Surface Mount 50 Pin Memory IC 16 Mb kb 20.95mm mm 180mA mA
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25LC640A-E/SN Microchip Technology
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S29GL128P90FACR20 Cypress Semiconductor Corp
3.3V V GL-P Memory IC GL-P Series 13mm mm
Price: 0.0000
RFQ






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