Items : %s%s
Memory
Contact Plating
- Tin
ECCN Code
- 3A991.B.1.A
- EAR99
Factory Lead Time
- 11 Weeks
- 4 Weeks
- 5 Weeks
- 6 Weeks
- 7 Weeks
- 8 Weeks
JESD-609 Code
- e3
- e4
Manufacturer Package Identifier
- 24AA256-I/P
Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- 1 (Unlimited)
- 3 (168 Hours)
Mount
- Surface Mount
- Through Hole
Mounting Type
- Surface Mount
- Through Hole
Number of Pins
- 28
- 3
- 32
- 5
- 8
Number of Terminations
- 28
- 3
- 32
- 5
- 8
Operating Temperature
- -40°C~85°C TA
- 0°C~70°C TA
Package / Case
- 28-DIP (0.600, 15.24mm)
- 32-DIP (0.600, 15.24mm)
- 32-LCC (J-Lead)
- 32-TFSOP (0.488, 12.40mm Width)
- 8-DIP (0.300, 7.62mm)
- 8-SOIC (0.154, 3.90mm Width)
- 8-SOIC (0.209, 5.30mm Width)
- 8-TSSOP, 8-MSOP (0.118, 3.00mm Width)
- SC-74A, SOT-753
- TO-226-3, TO-92-3 (TO-226AA)
Packaging
- Bulk
- Tape & Reel (TR)
- Tray
- Tube
Part Status
- Active
- Obsolete
Pbfree Code
- yes
Published
- 1995
- 1997
- 2000
- 2002
- 2003
- 2004
- 2005
- 2007
- 2008
- 2009
- 2013
Series
- MoBL®
- SST39 MPF™
Surface Mount
- NO
- YES
Terminal Finish
- Matte Tin (Sn)
- Matte Tin (Sn) - annealed
- Nickel/Palladium/Gold (Ni/Pd/Au)
Termination
- SMD/SMT
- Through Hole
Weight
- 453.59237mg
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Datasheet | Factory Lead Time | Mount | Packaging | Published | Series | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | Termination | ECCN Code | Max Operating Temperature | Min Operating Temperature | Operating Supply Voltage | Number of Ports | Length | RoHS Status | Lead Free | Contact Plating | Radiation Hardening | Number of Pins | Additional Feature | Package / Case | Interface | Max Supply Voltage | REACH SVHC | Reach Compliance Code | Min Supply Voltage | Density | Frequency | Height | Width | Thickness | Mounting Type | Operating Temperature | Technology | Operating Mode | Max Supply Current | Height Seated (Max) | HTS Code | Number of Functions | Nominal Supply Current | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Supply Voltage | Time@Peak Reflow Temperature-Max (s) | Base Part Number | Pin Count | Temperature Grade | Surface Mount | Terminal Pitch | JESD-30 Code | Supply Voltage-Min (Vsup) | Subcategory | Qualification Status | Power Supplies | Supply Voltage-Max (Vsup) | Supplier Device Package | Output Characteristics | Access Time | Frequency (Max) | Screening Level | Memory Size | Memory Type | Address Bus Width | Supply Current-Max | Voltage - Supply | Organization | Memory Width | Memory Density | Sync/Async | Parallel/Serial | Clock Frequency | Standby Current-Max | Access Time (Max) | Word Size | Alternate Memory Width | Data Retention Time-Min | Endurance | Write Protection | Write Cycle Time-Max (tWC) | I/O Type | Programming Voltage | Data Polling | Toggle Bit | Command User Interface | Number of Sectors/Size | Page Size | Ready/Busy | Serial Bus Type | I2C Control Byte | Refresh Cycles | Standby Voltage-Min | Memory Format | Memory Interface | Write Cycle Time - Word, Page | Sector Size | Sequential Burst Length | Interleaved Burst Length |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
S34ML02G104BHI010 | Cypress Semiconductor Corp | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 20 Weeks | Tray | 2014 | ML-1 | Discontinued | 3 (168 Hours) | 63 | 11mm | ROHS3 Compliant | No | 63 | 63-VFBGA | 2 Gb | Surface Mount | -40°C~85°C TA | FLASH - NAND | 1mm | 8542.32.00.51 | 1 | BOTTOM | 3.3V | YES | 0.8mm | 2.7V | 3/3.3V | 3.6V | 2Gb 128M x 16 | Non-Volatile | 28b | 0.04mA | 2.7V~3.6V | 128MX16 | 16 | 0.00005A | 25 ns | 3V | NO | NO | YES | 2K | 2kB | YES | FLASH | Parallel | 25ns | 64K | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
70T3519S133BF8 | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Surface Mount | 2009 | no | Active | 3 (168 Hours) | 208 | 70°C | 0°C | 2.5V | 2 | 15mm | RoHS Compliant | Contains Lead | No | 208 | FLOW-THROUGH OR PIPELINED ARCHITECTURE | Parallel | 2.6V | 2.4V | 9 Mb | 133MHz | 1.4mm | 15mm | 1.4mm | CMOS | 370mA | 1 | 370mA | e0 | Tin/Lead (Sn63Pb37) | BOTTOM | BALL | 225 | 2.5V | 208 | COMMERCIAL | 0.8mm | SRAMs | 3-STATE | 4.2 ns | 133MHz | 1.1MB | RAM, SDR, SRAM | 36b | Synchronous | 0.015A | 36b | COMMON | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
S25FL512SAGMFVG13 | Cypress Semiconductor Corp | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 13 Weeks | Tape & Reel (TR) | FL-S | Active | 3 (168 Hours) | 16 | 10.3mm | ROHS3 Compliant | IT ALSO HAVE MEMORY WIDTH X1 | 16-SOIC (0.295, 7.50mm Width) | SPI, Serial | 7.5mm | Surface Mount | -40°C~105°C TA | FLASH - NOR | SYNCHRONOUS | 2.65mm | 8542.32.00.51 | 1 | e3 | Matte Tin (Sn) | DUAL | 3V | YES | 1.27mm | R-PDSO-G16 | 2.7V | Not Qualified | 3/3.3V | 3.6V | 512Mb 64M x 8 | Non-Volatile | 0.061mA | 2.7V~3.6V | 64MX8 | 8 | 512753664 bit | 133MHz | 0.0001A | 1 | 20 | 100000 Write/Erase Cycles | HARDWARE/SOFTWARE | 3V | SPI | FLASH | SPI - Quad I/O | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
BR24S16F-WE2 | ROHM Semiconductor | 3.3991 |
Min: 1 Mult: 1 |
0.00000000 | 16 Weeks | Surface Mount | Tape & Reel (TR) | 2009 | yes | Active | 1 (Unlimited) | 8 | EAR99 | 5mm | ROHS3 Compliant | Lead Free | Copper, Tin | No | 8 | 8-SOIC (0.173, 4.40mm Width) | 2-Wire, I2C, Serial | 16 kb | 4.4mm | Surface Mount | -40°C~85°C TA | CMOS | 1 | 2mA | DUAL | 2.5V | BR24S16 | 8 | 1.27mm | 5.5V | 900 ns | 16Kb 2K x 8 | Non-Volatile | 1.7V~5.5V | 8 | 400kHz | 0.000002A | 40 | 1000000 Write/Erase Cycles | HARDWARE | 5ms | I2C | 1010MMMR | EEPROM | I2C | 5ms | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
23K256-I/SN | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 6 Weeks | Surface Mount | Tube | 2009 | yes | Active | 1 (Unlimited) | 8 | EAR99 | 3.3V | 1 | 4.9mm | ROHS3 Compliant | Lead Free | No | 8 | 8-SOIC (0.154, 3.90mm Width) | SPI, Serial | No SVHC | 256 kb | 1.5mm | 3.9mm | Surface Mount | -40°C~85°C TA | CMOS | 1 | 10mA | e3 | Matte Tin (Sn) - annealed | DUAL | 260 | 3V | 40 | 23K256 | 8 | 2.7V | 3.6V | 3-STATE | 25 ns | 256Kb 32K x 8 | Volatile | 1b | 2.7V~3.6V | Synchronous | 20MHz | 0.000004A | 8b | SEPARATE | 2.7V | SRAM | SPI | |||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
11LC040-I/P | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 10 Weeks | Through Hole | Tube | 2008 | yes | Active | 1 (Unlimited) | 8 | EAR99 | 5V | 9.46mm | ROHS3 Compliant | Lead Free | Tin | No | 8 | 8-DIP (0.300, 7.62mm) | Serial | No SVHC | 4 kb | 3.3mm | 6.35mm | Through Hole | -40°C~85°C TA | CMOS | 1 | 5mA | e3 | DUAL | 5V | 11LC040 | 8 | 2.54mm | 5 ms | 4Kb 512 x 8 | Non-Volatile | 2.5V~5.5V | 100kHz | 0.000005A | 200 | 1000000 Write/Erase Cycles | SOFTWARE | 10ms | 1-WIRE | EEPROM | Single Wire | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
MT48LC16M16A2TG-6A:D | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Surface Mount | Tray | 2010 | no | Obsolete | 2 (1 Year) | 54 | EAR99 | 3.3V | 1 | 22.22mm | Non-RoHS Compliant | Contains Lead | 54 | AUTO/SELF REFRESH | 54-TSOP (0.400, 10.16mm Width) | not_compliant | 256 Mb | Surface Mount | 0°C~70°C TA | SDRAM | SYNCHRONOUS | 1.2mm | 1 | 135mA | e0 | TIN LEAD | DUAL | 235 | 3.3V | 30 | MT48LC16M16A2 | 54 | 0.8mm | 3V | Not Qualified | 3.6V | 3-STATE | 5.4ns | 256Mb 16M x 16 | Volatile | 15b | 3V~3.6V | 16MX16 | 16 | 167MHz | 0.002A | COMMON | 8192 | DRAM | Parallel | 12ns | 1248FP | 1248 | ||||||||||||||||||||||||||||||||||||||||||||||||||
 |
MT48V8M32LFB5-8 IT TR | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tape & Reel (TR) | 2005 | Obsolete | 2 (1 Year) | ROHS3 Compliant | 90-VFBGA | Surface Mount | -40°C~85°C TA | SDRAM - Mobile LPSDR | MT48V8M32 | 90-VFBGA (8x13) | 7ns | 256Mb 8M x 32 | Volatile | 2.3V~2.7V | 125MHz | DRAM | Parallel | 15ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
MT53D384M32D2DS-053 XT:C TR | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tape & Reel (TR) | Obsolete | 3 (168 Hours) | ROHS3 Compliant | 200-WFBGA | Surface Mount | -30°C~105°C TC | SDRAM - Mobile LPDDR4 | 200-WFBGA (10x14.5) | 12Gb 384M x 32 | Volatile | 1.1V | 1866MHz | DRAM | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
BR93G86FV-3AGTE2 | ROHM Semiconductor | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 10 Weeks | Cut Tape (CT) | Active | 1 (Unlimited) | 8 | ROHS3 Compliant | 8-TSSOP (0.173, 4.40mm Width) | Surface Mount | -40°C~85°C TA | CMOS | DUAL | YES | 0.635mm | R-PDSO-G8 | Not Qualified | 1.8/5V | 16Kb 1K x 16 | Non-Volatile | 0.003mA | 1.7V~5.5V | 1KX16 | 16 | 16384 bit | SERIAL | 3MHz | 0.000002A | 40 | 1000000 Write/Erase Cycles | SOFTWARE | 3-WIRE | EEPROM | SPI | 5ms | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
24AA025T-I/MS | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 8 Weeks | Surface Mount | Tape & Reel (TR) | 2008 | yes | Active | 1 (Unlimited) | 8 | EAR99 | 2.5V | 3mm | ROHS3 Compliant | Tin | 8 | 8-TSSOP, 8-MSOP (0.118, 3.00mm Width) | I2C, Serial | 2 kb | 3mm | Surface Mount | -40°C~85°C TA | CMOS | SYNCHRONOUS | 1.1mm | 1 | 3mA | e3 | DUAL | 260 | 2.5V | 40 | 24AA025 | 8 | 0.65mm | 1.7V | Not Qualified | 2/5V | 5.5V | 900ns | 2Kb 256 x 8 | Non-Volatile | 1.7V~5.5V | 8 | 400kHz | 0.000001A | 200 | 1000000 Write/Erase Cycles | 5ms | I2C | 1010DDDR | EEPROM | I2C | 5ms | ||||||||||||||||||||||||||||||||||||||||||||||||||||
.png "CP7160AM") |
CP7160AM | Rochester Electronics, LLC | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tray | Obsolete | 3 (168 Hours) | Non-RoHS Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
AS4C512M16D3L-12BINTR | Alliance Memory, Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 8 Weeks | Tape & Reel (TR) | 2015 | Active | 3 (168 Hours) | Non-RoHS Compliant | 96-TFBGA | unknown | Surface Mount | -40°C~95°C TC | SDRAM - DDR3L | NOT SPECIFIED | NOT SPECIFIED | 13.75ns | 8Gb 512M x 16 | Volatile | 1.283V~1.45V | 800MHz | DRAM | Parallel | 15ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
BR25H640F-2CE2 | ROHM Semiconductor | 0.6852 |
Min: 1 Mult: 1 |
0.00000000 | 16 Weeks | Cut Tape (CT) | 2013 | Automotive, AEC-Q100 | Active | 1 (Unlimited) | 8 | 5mm | ROHS3 Compliant | 8 | ALSO OPERATES AT 2.5V WITH 5MHZ AND SEATED HT-CALCULATED | 8-SOIC (0.173, 4.40mm Width) | Unknown | 4.4mm | Surface Mount | -40°C~125°C TA | CMOS | SYNCHRONOUS | 1.71mm | 1 | DUAL | NOT SPECIFIED | 5V | NOT SPECIFIED | YES | 1.27mm | 4.5V | Not Qualified | 3/5V | 5.5V | 64Kb 8K x 8 | Non-Volatile | 0.0055mA | 2.5V~5.5V | 8 | 65536 bit | SERIAL | 10MHz | 0.00001A | 100 | 1000000 Write/Erase Cycles | HARDWARE/SOFTWARE | 4ms | SPI | EEPROM | SPI | 4ms | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
MT53B512M32D2GZ-062 WT ES:B | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tray | Obsolete | 1 (Unlimited) | 200-WFBGA | Surface Mount | -30°C~85°C TC | SDRAM - Mobile LPDDR4 | 16Gb 512M x 32 | Volatile | 1.1V | 1600MHz | DRAM | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
CY7C12681KV18-450BZXC | Rochester Electronics, LLC | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tray | Obsolete | 3 (168 Hours) | 165 | 15mm | ROHS3 Compliant | PIPELINED ARCHITECTURE | 165-LBGA | unknown | 13mm | Surface Mount | 0°C~70°C TA | SRAM - Synchronous, DDR II+ | 1.4mm | 1 | BOTTOM | 1.8V | 165 | YES | 1mm | R-PBGA-B165 | 1.7V | COMMERCIAL | 1.9V | 36Mb 2M x 18 | Volatile | 1.7V~1.9V | 2MX18 | 18 | 37748736 bit | 450MHz | 0.37 ns | SRAM | Parallel | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
7142LA100C | Renesas Electronics America Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 13 Weeks | Tube | Active | 1 (Unlimited) | Non-RoHS Compliant | 48-DIP (0.600, 15.24mm) | Through Hole | 0°C~70°C TA | SRAM - Dual Port, Asynchronous | IDT7142 | 16Kb 2K x 8 | Volatile | 4.5V~5.5V | SRAM | Parallel | 100ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
CY7C1412AV18-250BZXC | Rochester Electronics, LLC | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tray | yes | Obsolete | 3 (168 Hours) | 165 | 17mm | ROHS3 Compliant | PIPELINED ARCHITECTURE | 165-LBGA | unknown | 15mm | Surface Mount | 0°C~70°C TA | SRAM - Synchronous, QDR II | 1.4mm | 1 | e1 | TIN SILVER COPPER | BOTTOM | 260 | 1.8V | 20 | 165 | YES | 1mm | R-PBGA-B165 | 1.7V | COMMERCIAL | 1.9V | 36Mb 2M x 18 | Volatile | 1.7V~1.9V | 2MX18 | 18 | 37748736 bit | 250MHz | 0.45 ns | SRAM | Parallel | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
BR24L16FJ-WE2 | ROHM Semiconductor | 6.2055 |
Min: 1 Mult: 1 |
0.00000000 | 11 Weeks | Surface Mount | Tape & Reel (TR) | 2005 | yes | Active | 1 (Unlimited) | 8 | SMD/SMT | EAR99 | 4.9mm | ROHS3 Compliant | Lead Free | Copper, Tin | No | 8 | 8-SOIC (0.154, 3.90mm Width) | 2-Wire, I2C, Serial | No SVHC | 16 kb | 3.9mm | Surface Mount | -40°C~85°C TA | CMOS | 1.775mm | 1 | 2mA | e2 | Tin/Copper (Sn/Cu) | DUAL | 260 | 2.5V | 10 | BR24L16 | 8 | 1.27mm | 1.7V | 2/5V | 5.5V | 900 ns | 16Kb 2K x 8 | Non-Volatile | 1.8V~5.5V | 8 | 400kHz | 0.000002A | 40 | 1000000 Write/Erase Cycles | HARDWARE | 5ms | I2C | 1010MMMR | EEPROM | I2C | 5ms | ||||||||||||||||||||||||||||||||||||||||||||||||||
 |
W632GU6MB-15 TR | Winbond Electronics | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tape & Reel (TR) | Obsolete | 3 (168 Hours) | ROHS3 Compliant | 96-VFBGA | Surface Mount | 0°C~95°C TC | SDRAM - DDR3 | 20ns | 2Gb 128M x 16 | Volatile | 1.283V~1.45V | 667MHz | DRAM | Parallel | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
CY7C1021CV26-15ZSXET | Cypress Semiconductor Corp | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 11 Weeks | Surface Mount | Tape & Reel (TR) | 1996 | Active | 3 (168 Hours) | 44 | 1 | ROHS3 Compliant | Lead Free | No | 44 | 44-TSOP (0.400, 10.16mm Width) | 1 Mb | Surface Mount | -40°C~125°C TA | SRAM - Asynchronous | 1 | 80mA | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | DUAL | 260 | 2.6V | 30 | CY7C1021 | 44 | 0.8mm | 2.5V | 2.6V | 2.7V | 3-STATE | 1Mb 64K x 16 | Volatile | 16b | 2.5V~2.7V | 16 | Asynchronous | 16b | COMMON | 2.5V | SRAM | Parallel | 15ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
MT52L256M64D2QA-125 XT:B TR | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tape & Reel (TR) | Active | 3 (168 Hours) | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
MT29F32G08QAAWP:A TR | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tape & Reel (TR) | 2012 | Obsolete | 2 (1 Year) | ROHS3 Compliant | 48-TFSOP (0.724, 18.40mm Width) | Surface Mount | 0°C~70°C TA | FLASH - NAND | MT29F32G08 | 32Gb 4G x 8 | Non-Volatile | 2.7V~3.6V | FLASH | Parallel | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
70V25L35J8 | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Surface Mount | Tape & Reel | 2008 | no | Active | 1 (Unlimited) | 84 | EAR99 | 70°C | 0°C | 3.3V | 2 | 29.21mm | RoHS Compliant | Contains Lead | No | 84 | INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN | PLCC | Parallel | 3.6V | 3V | 128 kb | 29.21mm | 3.63mm | CMOS | 1 | 155mA | e0 | Tin/Lead (Sn85Pb15) | QUAD | J BEND | 225 | 3.3V | 84 | COMMERCIAL | SRAMs | 3-STATE | 35 ns | RAM, SRAM | 26b | 8KX16 | Asynchronous | 16b | COMMON | 3V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
71V65803S100BGGI | Renesas Electronics America Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 13 Weeks | Tray | Active | 3 (168 Hours) | ROHS3 Compliant | 119-BGA | Surface Mount | -40°C~85°C TA | SRAM - Synchronous, SDR (ZBT) | IDT71V65803 | 119-PBGA (14x22) | 5ns | 9Mb 512K x 18 | Volatile | 3.135V~3.465V | 100MHz | SRAM | Parallel | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
MT29F2G16ABAFAWP:F TR | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tape & Reel (TR) | Obsolete | 3 (168 Hours) | ROHS3 Compliant | 0°C~70°C TA | FLASH - NAND | 2Gb 128M x 16 | Non-Volatile | 2.7V~3.6V | FLASH | Parallel | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IDT71V3579S65PF8 | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tape & Reel (TR) | 2006 | 70°C | 0°C | Non-RoHS Compliant | LQFP | Parallel | RAM, SRAM | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
6116LA20TDB | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Through Hole | Bulk | 2013 | no | Active | 1 (Unlimited) | 24 | 125°C | -55°C | 5V | 1 | 32.51mm | RoHS Compliant | Contains Lead | No | 24 | CDIP | Parallel | 5.5V | 4.5V | 16 kb | 7.62mm | 3.56mm | CMOS | 5.08mm | 1 | 120mA | e0 | Tin/Lead (Sn/Pb) | DUAL | 240 | 5V | 24 | MILITARY | 2.54mm | SRAMs | 5V | 3-STATE | 20 ns | MIL-STD-883 Class B | RAM, SRAM - Asynchronous | 11b | 2KX8 | Asynchronous | 0.0003A | 8b | COMMON | 2V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
70V9099L12PFI8 | Renesas Electronics America Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tape & Reel (TR) | Obsolete | 3 (168 Hours) | Non-RoHS Compliant | 100-LQFP | Surface Mount | -40°C~85°C TA | SRAM - Dual Port, Synchronous | 12ns | 1Mb 128K x 8 | Volatile | 3V~3.6V | SRAM | Parallel | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IS25WP032D-JBLE | ISSI, Integrated Silicon Solution Inc | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 8 Weeks | Tube | yes | Active | 3 (168 Hours) | 8 | 5.28mm | ROHS3 Compliant | 8-SOIC (0.209, 5.30mm Width) | 5.28mm | Surface Mount | -40°C~105°C TA | FLASH - NOR | SYNCHRONOUS | 2.16mm | 1 | e3 | Tin (Sn) | DUAL | NOT SPECIFIED | 1.8V | NOT SPECIFIED | YES | 1.27mm | S-PDSO-G8 | 1.65V | 1.95V | 32Mb 4M x 8 | Non-Volatile | 1.65V~1.95V | 4MX8 | 8 | 33554432 bit | SERIAL | 133MHz | 1 | 1.8V | FLASH | SPI - Quad I/O, QPI, DTR | 800μs |
-
S34ML02G104BHI010 Cypress Semiconductor Corp
3/3.3V V ML-1 Memory IC ML-1 Series 2 Gb kb 11mm mm
Price: 0.0000
RFQ -
70T3519S133BF8 Integrated Device Technology (IDT)
Surface Mount 208 Pin Memory IC 9 Mb kb 15mm mm 370mA mA 36b b
Price: 0.0000
RFQ -
S25FL512SAGMFVG13 Cypress Semiconductor Corp
3/3.3V V FL-S Memory IC FL-S Series 10.3mm mm
Price: 0.0000
RFQ -
BR24S16F-WE2 ROHM Semiconductor
Surface Mount 8 Pin Memory IC BR24S16 16 kb kb 5mm mm 2mA mA
Price: 3.3991
RFQ -
23K256-I/SN Microchip Technology
Surface Mount 8 Pin Memory IC 23K256 256 kb kb 4.9mm mm 10mA mA 8b b
Price: 0.0000
RFQ -
11LC040-I/P Microchip Technology
Through Hole 8 Pin Memory IC 11LC040 4 kb kb 9.46mm mm 5mA mA
Price: 0.0000
RFQ -
MT48LC16M16A2TG-6A:D Micron Technology Inc.
Surface Mount 54 Pin Memory IC MT48LC16M16A2 256 Mb kb 22.22mm mm 135mA mA
Price: 0.0000
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24AA025T-I/MS Microchip Technology
2/5V V Surface Mount 8 Pin Memory IC 24AA025 2 kb kb 3mm mm 3mA mA
Price: 0.0000
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BR25H640F-2CE2 ROHM Semiconductor
3/5V V Automotive, AEC-Q100 Memory IC Automotive, AEC-Q100 Series 5mm mm
Price: 0.6852
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BR24L16FJ-WE2 ROHM Semiconductor
2/5V V Surface Mount 8 Pin Memory IC BR24L16 16 kb kb 4.9mm mm 2mA mA
Price: 6.2055
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CY7C1021CV26-15ZSXET Cypress Semiconductor Corp
2.6V V Surface Mount 44 Pin Memory IC CY7C1021 1 Mb kb 80mA mA 16b b
Price: 0.0000
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70V25L35J8 Integrated Device Technology (IDT)
Surface Mount 84 Pin Memory IC 128 kb kb 29.21mm mm 155mA mA 16b b
Price: 0.0000
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6116LA20TDB Integrated Device Technology (IDT)
5V V Through Hole 24 Pin Memory IC 16 kb kb 32.51mm mm 120mA mA 8b b
Price: 0.0000
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