Items : %s%s
Memory
Contact Plating
- Tin
ECCN Code
- 3A991.B.1.A
- EAR99
Factory Lead Time
- 11 Weeks
- 4 Weeks
- 5 Weeks
- 6 Weeks
- 7 Weeks
- 8 Weeks
JESD-609 Code
- e3
- e4
Manufacturer Package Identifier
- 24AA256-I/P
Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- 1 (Unlimited)
- 3 (168 Hours)
Mount
- Surface Mount
- Through Hole
Mounting Type
- Surface Mount
- Through Hole
Number of Pins
- 28
- 3
- 32
- 5
- 8
Number of Terminations
- 28
- 3
- 32
- 5
- 8
Operating Temperature
- -40°C~85°C TA
- 0°C~70°C TA
Package / Case
- 28-DIP (0.600, 15.24mm)
- 32-DIP (0.600, 15.24mm)
- 32-LCC (J-Lead)
- 32-TFSOP (0.488, 12.40mm Width)
- 8-DIP (0.300, 7.62mm)
- 8-SOIC (0.154, 3.90mm Width)
- 8-SOIC (0.209, 5.30mm Width)
- 8-TSSOP, 8-MSOP (0.118, 3.00mm Width)
- SC-74A, SOT-753
- TO-226-3, TO-92-3 (TO-226AA)
Packaging
- Bulk
- Tape & Reel (TR)
- Tray
- Tube
Part Status
- Active
- Obsolete
Pbfree Code
- yes
Published
- 1995
- 1997
- 2000
- 2002
- 2003
- 2004
- 2005
- 2007
- 2008
- 2009
- 2013
Series
- MoBL®
- SST39 MPF™
Surface Mount
- NO
- YES
Terminal Finish
- Matte Tin (Sn)
- Matte Tin (Sn) - annealed
- Nickel/Palladium/Gold (Ni/Pd/Au)
Termination
- SMD/SMT
- Through Hole
Weight
- 453.59237mg
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Datasheet | Factory Lead Time | Mount | Packaging | Published | Series | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | ECCN Code | Max Operating Temperature | Min Operating Temperature | Operating Supply Voltage | Number of Ports | Length | RoHS Status | Lead Free | Contact Plating | Radiation Hardening | Number of Pins | Additional Feature | Package / Case | Interface | Max Supply Voltage | REACH SVHC | Reach Compliance Code | Min Supply Voltage | Density | Frequency | Height | Width | Thickness | Mounting Type | Weight | Operating Temperature | Technology | Operating Mode | Max Supply Current | Height Seated (Max) | HTS Code | Number of Functions | Nominal Supply Current | Max Frequency | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Supply Voltage | Time@Peak Reflow Temperature-Max (s) | Base Part Number | Pin Count | Temperature Grade | Surface Mount | Terminal Pitch | JESD-30 Code | Supply Voltage-Min (Vsup) | Subcategory | Qualification Status | Power Supplies | Supply Voltage-Max (Vsup) | Supplier Device Package | Output Characteristics | Access Time | Screening Level | Memory Size | Memory Type | Address Bus Width | Supply Current-Max | Voltage - Supply | Organization | Memory Width | Memory Density | Sync/Async | Data Bus Width | uPs/uCs/Peripheral ICs Type | Parallel/Serial | Clock Frequency | Standby Current-Max | Access Time (Max) | Word Size | Alternate Memory Width | Data Retention Time-Min | Endurance | Write Protection | Write Cycle Time-Max (tWC) | I/O Type | Programming Voltage | Serial Bus Type | I2C Control Byte | Reverse Pinout | Refresh Cycles | Access Mode | Standby Voltage-Min | Memory Format | Memory Interface | Write Cycle Time - Word, Page | Sequential Burst Length | Interleaved Burst Length |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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70V3599S166BC8 | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Surface Mount | Tape & Reel | 2009 | no | Active | 3 (168 Hours) | 256 | 70°C | 0°C | 3.3V | 2 | 17mm | RoHS Compliant | Contains Lead | No | 256 | FLOW-THROUGH OR PIPELINED ARCHITECTURE | Parallel | 3.45V | 3.15V | 4.5 Mb | 166MHz | 17mm | 1.4mm | CMOS | 1.7mm | 1 | 500mA | e0 | Tin/Lead (Sn63Pb37) | BOTTOM | BALL | 3.3V | 256 | COMMERCIAL | 1mm | SRAMs | 3-STATE | 12 ns | RAM, SRAM | 34b | Synchronous | 0.03A | 36b | COMMON | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
70T631S12BCI8 | Renesas Electronics America Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 12 Weeks | Tape & Reel (TR) | Active | 3 (168 Hours) | Non-RoHS Compliant | 256-LBGA | Surface Mount | -40°C~85°C TA | SRAM - Dual Port, Asynchronous | IDT70T631 | 256-CABGA (17x17) | 12ns | 4.5Mb 256K x 18 | Volatile | 2.4V~2.6V | SRAM | Parallel | 12ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
.png "N25Q008A11EF640E") |
N25Q008A11EF640E | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tray | Obsolete | 3 (168 Hours) | ROHS3 Compliant | SOIC | -40°C~85°C TA | FLASH - NOR | N25Q008A11 | 8Mb 1M x 8 | Non-Volatile | 1.7V~2V | 108MHz | FLASH | SPI | 8ms, 5ms | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
MT40A512M8RH-083E AUT:B TR | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tape & Reel (TR) | Obsolete | 3 (168 Hours) | 78 | 1 | 10.5mm | ROHS3 Compliant | AUTO/SELF REFRESH | 78-TFBGA | 9mm | Surface Mount | -40°C~125°C TC | SDRAM - DDR4 | SYNCHRONOUS | 1.2mm | 1 | BOTTOM | 1.2V | YES | 0.8mm | R-PBGA-B78 | 1.14V | 1.26V | AEC-Q100 | 4Gb 512M x 8 | Volatile | 1.14V~1.26V | 512MX8 | 8 | 4294967296 bit | 1.2GHz | MULTI BANK PAGE BURST | DRAM | Parallel | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
24FC256-E/ST16KVAO | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tube | Automotive, AEC-Q100 | Active | 1 (Unlimited) | 8 | 4.4mm | RoHS Compliant | 8-TSSOP (0.173, 4.40mm Width) | compliant | 3mm | Surface Mount | -40°C~125°C TA | CMOS | SYNCHRONOUS | 1.2mm | 1 | DUAL | 24FC256 | YES | 0.65mm | R-PDSO-G8 | 1.7V | 5.5V | 400ns | 256Kb 32K x 8 | Non-Volatile | 0.003mA | 1.7V~5.5V | 32KX8 | 8 | 262144 bit | SERIAL | 1MHz | 0.000005A | 200 | 1000000 Write/Erase Cycles | HARDWARE | 5ms | I2C | 1010DDDR | NO | EEPROM | I2C | 5ms | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IS64LF12836EC-7.5B3LA3-TR | ISSI, Integrated Silicon Solution Inc | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 12 Weeks | Tape & Reel (TR) | Active | 3 (168 Hours) | ROHS3 Compliant | 165 | 165-TBGA | Surface Mount | -40°C~125°C TA | SRAM - Synchronous, SDR | 117MHz | 7.5ns | 4.5Mb 128K x 36 | Volatile | 3.135V~3.465V | SRAM | Parallel | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IS46R16160D-5BLA1 | ISSI, Integrated Silicon Solution Inc | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 10 Weeks | Tray | Active | 3 (168 Hours) | 60 | 2.5V | 1 | 13mm | ROHS3 Compliant | No | 60 | AUTO/SELF REFRESH | 60-TFBGA | 256 Mb | Surface Mount | -40°C~85°C TA | SDRAM - DDR | 1.2mm | 1 | BOTTOM | 2.5V | YES | 1mm | 2.3V | 2.7V | 700ps | 256Mb 16M x 16 | Volatile | 15b | 2.3V~2.7V | 16MX16 | 16 | 16b | 200MHz | DRAM | Parallel | 15ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
MT45W4MW16PCGA-70 IT TR | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tape & Reel (TR) | 2002 | Obsolete | 3 (168 Hours) | ROHS3 Compliant | 48-VFBGA | Surface Mount | -40°C~85°C TC | PSRAM (Pseudo SRAM) | MT45W4MW16 | 64Mb 4M x 16 | Volatile | 1.7V~1.95V | PSRAM | Parallel | 70ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
CY14B104N-BA20XI | Cypress Semiconductor Corp | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 13 Weeks | Surface Mount | Tube | 2005 | Obsolete | 3 (168 Hours) | 48 | 3A991.B.2.A | 3.3V | 10mm | ROHS3 Compliant | 48 | 48-TFBGA | unknown | 4 Mb | Surface Mount | -40°C~85°C TA | NVSRAM (Non-Volatile SRAM) | ASYNCHRONOUS | 1.2mm | 8542.32.00.41 | 1 | 70mA | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | BOTTOM | 260 | 3V | 20 | CY14B104 | 48 | 0.75mm | 2.7V | SRAMs | Not Qualified | 3.6V | 4Mb 256K x 16 | Non-Volatile | 2.7V~3.6V | 256KX16 | 16 | 16b | 0.005A | 20 ns | 16b | NVSRAM | Parallel | 20ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
CY62146GN-45ZSXIT | Cypress Semiconductor Corp | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 13 Weeks | Tape & Reel (TR) | MoBL® | Active | 3 (168 Hours) | 44 | 18.415mm | ROHS3 Compliant | 44-TSOP (0.400, 10.16mm Width) | 10.16mm | Surface Mount | -40°C~85°C TA | SRAM - Asynchronous | 1.194mm | 8542.32.00.41 | 1 | DUAL | NOT SPECIFIED | 5V | NOT SPECIFIED | YES | 0.8mm | R-PDSO-G44 | 4.5V | 5.5V | 4Mb 256K x 16 | Volatile | 4.5V~5.5V | 256KX16 | 16 | 4194304 bit | 45 ns | SRAM | Parallel | 45ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
W632GG6KB-12 TR | Winbond Electronics | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tape & Reel (TR) | Discontinued | 3 (168 Hours) | ROHS3 Compliant | 96-TFBGA | Surface Mount | 0°C~95°C TC | SDRAM - DDR3 | 20ns | 2Gb 128M x 16 | Volatile | 1.425V~1.575V | 800MHz | DRAM | Parallel | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IS42S16100C1-7BI | ISSI, Integrated Silicon Solution Inc | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tray | Obsolete | 2 (1 Year) | 60 | EAR99 | 1 | 10.1mm | Non-RoHS Compliant | 60 | AUTO/SELF REFRESH | 60-TFBGA | not_compliant | Surface Mount | -40°C~85°C TA | SDRAM | SYNCHRONOUS | 1.2mm | 8542.32.00.02 | 1 | e0 | Tin/Lead (Sn/Pb) | BOTTOM | NOT SPECIFIED | 3.3V | NOT SPECIFIED | 60 | YES | 0.65mm | 3V | Not Qualified | 3.3V | 3.6V | 3-STATE | 5.5ns | 16Mb 1M x 16 | Volatile | 0.14mA | 3V~3.6V | 1MX16 | 16 | 16b | 143MHz | 0.003A | COMMON | 4096 | DRAM | Parallel | 1248FP | 1248 | |||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
TC58NYG1S3HBAI6 | Kioxia America, Inc. | 2.4765 |
Min: 1 Mult: 1 |
0.00000000 | download | Tray | Active | 3 (168 Hours) | 67 | 8mm | RoHS Compliant | 67-VFBGA | 6.5mm | Surface Mount | -40°C~85°C TA | FLASH - NAND (SLC) | ASYNCHRONOUS | 1mm | 1 | BOTTOM | 1.8V | YES | 0.8mm | R-PBGA-B67 | 1.7V | 1.95V | 2Gb 256M x 8 | Non-Volatile | 1.7V~1.95V | 256MX8 | 8 | 2147483648 bit | 1.8V | FLASH | Parallel | 25ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
MT53B1024M64D8PM-062 WT:D TR | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tape & Reel (TR) | Obsolete | 3 (168 Hours) | ROHS3 Compliant | -30°C~85°C TC | SDRAM - Mobile LPDDR4 | 64Gb 1G x 64 | Volatile | 1.1V | 1600MHz | DRAM | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
24CW160T-I/SN | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 6 Weeks | Tape & Reel (TR) | 24CW | Active | 3 (168 Hours) | 8 | 4.9mm | 8-SOIC (0.154, 3.90mm Width) | compliant | 3.9mm | Surface Mount | -40°C~85°C TA | CMOS | SYNCHRONOUS | 1.75mm | 1 | DUAL | 1.8V | YES | 1.27mm | R-PDSO-G8 | 1.6V | 5.5V | 450ns | TS 16949 | 16Kb 2K x 8 | Non-Volatile | 1.6V~5.5V | 2KX8 | 8 | 16384 bit | SERIAL | 1MHz | 5ms | I2C | EEPROM | I2C | 5ms | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
BR24T64FVM-WTR | ROHM Semiconductor | 2.5310 |
Min: 1 Mult: 1 |
0.00000000 | 7 Weeks | Surface Mount | Tape & Reel (TR) | 2013 | yes | Active | 1 (Unlimited) | 8 | 2.9mm | ROHS3 Compliant | Copper, Tin | 8 | 8-VSSOP, 8-MSOP (0.110, 2.80mm Width) | 2-Wire, I2C, Serial | 64 kb | Surface Mount | -40°C~85°C TA | CMOS | SYNCHRONOUS | 0.9mm | 1 | e3 | Matte Tin (Sn) | DUAL | 225 | 2.5V | NOT SPECIFIED | BR24T64 | 0.65mm | 1.6V | Not Qualified | 5.5V | 900 ns | 64Kb 8K x 8 | Non-Volatile | 0.002mA | 1.6V~5.5V | 8 | 400kHz | 0.000002A | 40 | 1000000 Write/Erase Cycles | HARDWARE | 5ms | I2C | 1010DDDR | EEPROM | I2C | 5ms | |||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
STK14D88-RF35 | Rochester Electronics, LLC | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tube | Obsolete | 3 (168 Hours) | 48 | 15.875mm | ROHS3 Compliant | 48-BSSOP (0.295, 7.50mm Width) | unknown | 7.505mm | Surface Mount | 0°C~70°C TA | NVSRAM (Non-Volatile SRAM) | ASYNCHRONOUS | 2.79mm | 1 | e3 | MATTE TIN | DUAL | 260 | 3V | 40 | 48 | YES | 0.635mm | R-PDSO-G48 | 2.7V | COMMERCIAL | 3.6V | 256Kb 32K x 8 | Non-Volatile | 2.7V~3.6V | 32KX8 | 8 | 262144 bit | 35 ns | NVSRAM | Parallel | 35ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
MT29C4G48MAZBAAKS-5 E WT | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Bulk | 2014 | Obsolete | 3 (168 Hours) | ROHS3 Compliant | 137-VFBGA | Surface Mount | -25°C~85°C TA | FLASH - NAND, Mobile LPDRAM | MT29C4G48M | 4Gb 256M x 16 N 2Gb 128M x 16 LPDRAM | Non-Volatile | 1.7V~1.95V | 200MHz | FLASH, RAM | Parallel | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
S25FL256SAGBHAA00 | Cypress Semiconductor Corp | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 13 Weeks | Tray | 2016 | Automotive, AEC-Q100, FL-S | Active | 3 (168 Hours) | 24 | 8mm | ROHS3 Compliant | ALSO CONFIGURABLE AS 256M X 1 | 24-TBGA | 6mm | Surface Mount | -40°C~85°C TA | FLASH - NOR | SYNCHRONOUS | 1.2mm | 8542.32.00.51 | 1 | BOTTOM | NOT SPECIFIED | 3V | NOT SPECIFIED | YES | 1mm | R-PBGA-B24 | 2.7V | 3.6V | 256Mb 32M x 8 | Non-Volatile | 2.7V~3.6V | 64MX4 | 4 | 268435456 bit | SERIAL | 133MHz | 2 | 500ms | 3V | FLASH | SPI - Quad I/O | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
71V321S35J8 | Renesas Electronics America Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tape & Reel (TR) | Obsolete | 3 (168 Hours) | Non-RoHS Compliant | 52-LCC (J-Lead) | Surface Mount | 0°C~70°C TA | SRAM - Dual Port, Asynchronous | IDT71V321 | 52-PLCC (19.13x19.13) | 35ns | 16Kb 2K x 8 | Volatile | 3V~3.6V | SRAM | Parallel | 35ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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R1QGA4418RBG-25IB0 | Renesas Electronics America | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | yes | Last Time Buy | ROHS3 Compliant | CMOS | 165 | MICROCONTROLLER | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
AT27C020-55JU | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Surface Mount | Tube | 1997 | yes | Active | 2 (1 Year) | 32 | 5V | 14mm | ROHS3 Compliant | Lead Free | No | 32 | 32-LCC (J-Lead) | No SVHC | 2 Mb | 55GHz | 2.8mm | 11.5mm | Surface Mount | -40°C~85°C TC | EPROM - OTP | 1 | 25mA | e3 | Matte Tin (Sn) - annealed | QUAD | 245 | 5V | 40 | AT27C020 | 1.27mm | OTP ROMs | 5V | 3-STATE | 55ns | 2Mb 256K x 8 | Non-Volatile | 4.5V~5.5V | 256KX8 | 0.0001A | COMMON | EPROM | Parallel | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
CY7C109D-10VXIT | Cypress Semiconductor Corp | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Surface Mount | Tape & Reel (TR) | 1996 | yes | Active | 3 (168 Hours) | 32 | 5V | 1 | 20.955mm | ROHS3 Compliant | Lead Free | No | 32 | 32-BSOJ (0.400, 10.16mm Width) | 1 Mb | Surface Mount | -40°C~85°C TA | SRAM - Asynchronous | 3.7592mm | 1 | 80mA | 100MHz | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | DUAL | 260 | 5V | 30 | CY7C109 | 5V | 3-STATE | 1Mb 128K x 8 | Volatile | 17b | 4.5V~5.5V | 8 | Asynchronous | 0.003A | 8b | COMMON | 2V | SRAM | Parallel | 10ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
SST26WF040BAT-104I/NP | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 6 Weeks | Tape & Reel (TR) | 2014 | SST26 SQI® | Active | 1 (Unlimited) | 85°C | -40°C | ROHS3 Compliant | 8-UFDFN Exposed Pad | SPI | 104MHz | Surface Mount | -40°C~85°C TA | FLASH | SST26WF040 | 8-USON (2x3) | 4Mb 512K x 8 | Non-Volatile | 1.65V~1.95V | 104MHz | FLASH | SPI - Quad I/O | 1.5ms | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
MT53D512M16D1DS-046 WT:D | Micron Technology Inc. | 9.5609 |
Min: 1 Mult: 1 |
0.00000000 | Tray | Automotive, AEC-Q100 | Active | 3 (168 Hours) | ROHS3 Compliant | 200-WFBGA | Surface Mount | -30°C~85°C TC | SDRAM - Mobile LPDDR4 | 8Gb 512M x 16 | Volatile | 2.133GHz | DRAM | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
AT25256T2-10TI | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tube | 1997 | Obsolete | 1 (Unlimited) | Non-RoHS Compliant | 20-TSSOP (0.173, 4.40mm Width) | Surface Mount | -40°C~85°C TA | AT25256 | 256Kb 32K x 8 | Non-Volatile | 4.5V~5.5V | 3MHz | EEPROM | SPI | 5ms | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
S25FS128SDSNFI101 | Cypress Semiconductor Corp | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 16 Weeks | Tube | 2013 | FS-S | Active | 3 (168 Hours) | 8 | 1.8V | 6mm | ROHS3 Compliant | No | 8 | 8-WDFN Exposed Pad | SPI, Serial | No SVHC | 128 Mb | Surface Mount | 10.886217mg | -40°C~85°C TA | FLASH - NOR | 90mA | 1 | DUAL | 1.8V | YES | 1.27mm | 1.7V | 2V | 128Mb 16M x 8 | Non-Volatile | 1.7V~2V | 32MX4 | 4 | 8b | 80MHz | 2 | FLASH | SPI - Quad I/O, QPI | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
7006S25GB | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 10 Weeks | Through Hole | Bulk | 2010 | no | Active | 1 (Unlimited) | 68 | 125°C | -55°C | 5V | 2 | 29.46mm | RoHS Compliant | Contains Lead | No | 68 | INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN | Parallel | 5.5V | 4.5V | 128 kb | 29.46mm | 3.68mm | CMOS | 1 | 340mA | e0 | Tin/Lead (Sn/Pb) | PERPENDICULAR | PIN/PEG | 240 | 5V | 68 | MILITARY | SRAMs | 5V | 3-STATE | 25 ns | MIL-PRF-38535 | RAM, SRAM | 28b | 16KX8 | Asynchronous | 0.03A | 8b | COMMON | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
CY7C1548KV18-450BZC | Rochester Electronics, LLC | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tray | Obsolete | 3 (168 Hours) | Non-RoHS Compliant | 165-LBGA | Surface Mount | 0°C~70°C TA | SRAM - Synchronous, DDR II+ | 165-FBGA (13x15) | 72Mb 4M x 18 | Volatile | 1.7V~1.9V | 450MHz | SRAM | Parallel | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
CY62128EV30LL-45ZXA | Cypress Semiconductor Corp | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 8 Weeks | Surface Mount | Tube | 2003 | MoBL® | Obsolete | 3 (168 Hours) | 32 | EAR99 | 3V | 1 | ROHS3 Compliant | Lead Free | No | 32 | 32-TFSOP (0.724, 18.40mm Width) | 1 Mb | Surface Mount | -40°C~85°C TA | SRAM - Asynchronous | 1 | 16mA | e3 | Matte Tin (Sn) | DUAL | 260 | 3V | 30 | CY62128 | 32 | 0.5mm | 2.2V | 3.6V | 3-STATE | 1Mb 128K x 8 | Volatile | 17b | 2.2V~3.6V | 8 | Asynchronous | 0.000003A | 45 ns | 8b | COMMON | SRAM | Parallel | 45ns |
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70V3599S166BC8 Integrated Device Technology (IDT)
Surface Mount 256 Pin Memory IC 4.5 Mb kb 17mm mm 500mA mA 36b b
Price: 0.0000
RFQ -
-
-
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24FC256-E/ST16KVAO Microchip Technology
Automotive, AEC-Q100 Memory IC Automotive, AEC-Q100 Series 24FC256 4.4mm mm
Price: 0.0000
RFQ -
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IS46R16160D-5BLA1 ISSI, Integrated Silicon Solution Inc
Memory IC 256 Mb kb 13mm mm
Price: 0.0000
RFQ -
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CY14B104N-BA20XI Cypress Semiconductor Corp
Surface Mount 48 Pin Memory IC CY14B104 4 Mb kb 10mm mm 70mA mA 16b b
Price: 0.0000
RFQ -
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MoBL® Memory IC MoBL® Series 18.415mm mm
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IS42S16100C1-7BI ISSI, Integrated Silicon Solution Inc
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BR24T64FVM-WTR ROHM Semiconductor
Surface Mount Memory IC BR24T64 64 kb kb 2.9mm mm
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S25FL256SAGBHAA00 Cypress Semiconductor Corp
Automotive, AEC-Q100, FL-S Memory IC Automotive, AEC-Q100, FL-S Series 8mm mm
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AT27C020-55JU Microchip Technology
5V V Surface Mount Memory IC AT27C020 2 Mb kb 14mm mm 25mA mA
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SST26WF040BAT-104I/NP Microchip Technology
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MT53D512M16D1DS-046 WT:D Micron Technology Inc.
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7006S25GB Integrated Device Technology (IDT)
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CY62128EV30LL-45ZXA Cypress Semiconductor Corp
Surface Mount MoBL® 32 Pin Memory IC MoBL® Series CY62128 1 Mb kb 16mA mA 8b b
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