Items : %s%s
Memory
Contact Plating
- Tin
ECCN Code
- 3A991.B.1.A
- EAR99
Factory Lead Time
- 11 Weeks
- 4 Weeks
- 5 Weeks
- 6 Weeks
- 7 Weeks
- 8 Weeks
JESD-609 Code
- e3
- e4
Manufacturer Package Identifier
- 24AA256-I/P
Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- 1 (Unlimited)
- 3 (168 Hours)
Mount
- Surface Mount
- Through Hole
Mounting Type
- Surface Mount
- Through Hole
Number of Pins
- 28
- 3
- 32
- 5
- 8
Number of Terminations
- 28
- 3
- 32
- 5
- 8
Operating Temperature
- -40°C~85°C TA
- 0°C~70°C TA
Package / Case
- 28-DIP (0.600, 15.24mm)
- 32-DIP (0.600, 15.24mm)
- 32-LCC (J-Lead)
- 32-TFSOP (0.488, 12.40mm Width)
- 8-DIP (0.300, 7.62mm)
- 8-SOIC (0.154, 3.90mm Width)
- 8-SOIC (0.209, 5.30mm Width)
- 8-TSSOP, 8-MSOP (0.118, 3.00mm Width)
- SC-74A, SOT-753
- TO-226-3, TO-92-3 (TO-226AA)
Packaging
- Bulk
- Tape & Reel (TR)
- Tray
- Tube
Part Status
- Active
- Obsolete
Pbfree Code
- yes
Published
- 1995
- 1997
- 2000
- 2002
- 2003
- 2004
- 2005
- 2007
- 2008
- 2009
- 2013
Series
- MoBL®
- SST39 MPF™
Surface Mount
- NO
- YES
Terminal Finish
- Matte Tin (Sn)
- Matte Tin (Sn) - annealed
- Nickel/Palladium/Gold (Ni/Pd/Au)
Termination
- SMD/SMT
- Through Hole
Weight
- 453.59237mg
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Datasheet | Factory Lead Time | Mount | Packaging | Published | Series | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | ECCN Code | Max Operating Temperature | Min Operating Temperature | Operating Supply Voltage | Number of Ports | Length | RoHS Status | Lead Free | Radiation Hardening | Number of Pins | Additional Feature | Package / Case | Interface | Max Supply Voltage | REACH SVHC | Reach Compliance Code | Min Supply Voltage | Density | Frequency | Height | Width | Thickness | Mounting Type | Operating Temperature | Technology | Operating Mode | Height Seated (Max) | Manufacturer Package Identifier | HTS Code | Number of Functions | Nominal Supply Current | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Supply Voltage | Time@Peak Reflow Temperature-Max (s) | Base Part Number | Pin Count | Temperature Grade | Surface Mount | Terminal Pitch | JESD-30 Code | Supply Voltage-Min (Vsup) | Subcategory | Qualification Status | Power Supplies | Supply Voltage-Max (Vsup) | Voltage | Supplier Device Package | Output Characteristics | Access Time | Frequency (Max) | Screening Level | Memory Size | Memory Type | Address Bus Width | Supply Current-Max | Voltage - Supply | Organization | Memory Width | Memory Density | Sync/Async | Parallel/Serial | Clock Frequency | Standby Current-Max | Access Time (Max) | Word Size | Alternate Memory Width | Data Retention Time-Min | Endurance | Write Protection | Write Cycle Time-Max (tWC) | I/O Type | Programming Voltage | Data Polling | Toggle Bit | Command User Interface | Number of Sectors/Size | Page Size | Ready/Busy | Common Flash Interface | Serial Bus Type | Standby Voltage-Min | Memory Format | Memory Interface | Write Cycle Time - Word, Page | Sector Size | Boot Block |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
.png "MT29F256G08EBHAFB16A3WEA") |
MT29F256G08EBHAFB16A3WEA | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 5 Weeks | Bulk | Active | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MT47H256M8THN-25E:H TR | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tape & Reel (TR) | 2002 | Obsolete | 3 (168 Hours) | ROHS3 Compliant | 63-TFBGA | Surface Mount | 0°C~85°C TC | SDRAM - DDR2 | MT47H256M8 | 400ps | 2Gb 256M x 8 | Volatile | 1.7V~1.9V | 400MHz | DRAM | Parallel | 15ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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70V09L20PF8 | Renesas Electronics America Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tape & Reel (TR) | Obsolete | 3 (168 Hours) | Non-RoHS Compliant | 100-LQFP | Surface Mount | 0°C~70°C TA | SRAM - Dual Port, Asynchronous | IDT70V09 | 1Mb 128K x 8 | Volatile | 3V~3.6V | SRAM | Parallel | 20ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
71V416L12BE | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 12 Weeks | Surface Mount | 2014 | no | Active | 4 (72 Hours) | 48 | 70°C | 0°C | 3.3V | 1 | 9mm | RoHS Compliant | Contains Lead | No | 48 | TFBGA | Parallel | 3.6V | 3V | 4 Mb | 9mm | 1.2mm | CMOS | 1 | 170mA | e0 | Tin/Lead (Sn63Pb37) | BOTTOM | BALL | 225 | 3.3V | 20 | 48 | COMMERCIAL | 0.75mm | SRAMs | 3-STATE | 12 ns | 512kB | RAM, SDR, SRAM - Asynchronous | 18b | Asynchronous | 16b | COMMON | 3V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
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AT21CS01-SSHM12-T | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 16 Weeks | Tape & Reel (TR) | 2005 | yes | Active | 3 (168 Hours) | 8 | 4.9mm | ROHS3 Compliant | 8 | 8-SOIC (0.154, 3.90mm Width) | 3.9mm | Surface Mount | -40°C~85°C TC | CMOS | SYNCHRONOUS | 1.75mm | 1 | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | DUAL | 260 | 1.8V | 40 | AT21CS01 | YES | 1.27mm | 1.7V | 3.6V | 1Kb 128 x 8 | Non-Volatile | 1.7V~3.6V | 8 | 1024 bit | SERIAL | 125kHz | 5ms | 1-WIRE | EEPROM | I2C, Single Wire | 5ms | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
MT53B4DATT-DC TR | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tape & Reel (TR) | Obsolete | 1 (Unlimited) | SDRAM - Mobile LPDDR4 | Volatile | DRAM | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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CY7C199C-20VXC | Cypress Semiconductor Corp | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tray | 2005 | yes | Obsolete | 3 (168 Hours) | 28 | EAR99 | 17.907mm | ROHS3 Compliant | Lead Free | 28 | 28-BSOJ (0.300, 7.62mm Width) | unknown | 20GHz | 7.5057mm | Surface Mount | 0°C~70°C TA | SRAM - Asynchronous | 3.556mm | 8542.32.00.41 | 1 | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | DUAL | 260 | 5V | 40 | CY7C199 | 28 | YES | 1.27mm | 4.5V | Not Qualified | 5V | 5.5V | 3-STATE | 256Kb 32K x 8 | Volatile | 0.075mA | 4.5V~5.5V | 32KX8 | 8 | 262144 bit | 0.01A | 20 ns | COMMON | 4.5V | SRAM | Parallel | 20ns | |||||||||||||||||||||||||||||||||||||||||||||||||||
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MT48H16M32L2B5-8 IT TR | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tape & Reel (TR) | 2003 | Discontinued | 2 (1 Year) | ROHS3 Compliant | 90-VFBGA | Surface Mount | -40°C~85°C TA | SDRAM - Mobile LPSDR | MT48H16M32 | 90-VFBGA (8x13) | 7.5ns | 512Mb 16M x 32 | Volatile | 1.7V~1.9V | 125MHz | DRAM | Parallel | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MTFC64GAJAEDN-AAT | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 26 Weeks | Tray | e•MMC™ | Active | 3 (168 Hours) | ROHS3 Compliant | 169-LFBGA | Surface Mount | -40°C~105°C TA | FLASH - NAND | 512Gb 64G x 8 | Non-Volatile | 2.7V | FLASH | MMC | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
MT41K512M8V90BWC1 | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tray | Obsolete | 3 (168 Hours) | ROHS3 Compliant | 0°C~95°C TC | SDRAM - DDR3L | 4Gb 512M x 8 | Volatile | 1.283V~1.45V | DRAM | Parallel | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
TH58NVG3S0HTAI0 | Kioxia America, Inc. | 9.7581 |
Min: 1 Mult: 1 |
0.00000000 | download | Tray | Active | 3 (168 Hours) | 48 | 18.4mm | RoHS Compliant | 48-TFSOP (0.724, 18.40mm Width) | 12mm | Surface Mount | -40°C~85°C TA | FLASH - NAND (SLC) | ASYNCHRONOUS | 1.2mm | 1 | DUAL | 3.3V | YES | 0.5mm | R-PDSO-G48 | 2.7V | 3.6V | 8Gb 1G x 8 | Non-Volatile | 2.7V~3.6V | 1GX8 | 8 | 8589934592 bit | 3V | FLASH | Parallel | 25ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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7130SA25TF8 | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Surface Mount | 2013 | no | Active | 3 (168 Hours) | 64 | EAR99 | 70°C | 0°C | 5V | 2 | 10mm | RoHS Compliant | Contains Lead | No | 64 | TQFP | Parallel | 5.5V | 4.5V | 8 kb | 10mm | 1.4mm | CMOS | 1.6mm | 1 | 220mA | e0 | Tin/Lead (Sn85Pb15) | QUAD | GULL WING | 240 | 5V | 20 | 64 | COMMERCIAL | 0.5mm | SRAMs | 5V | 3-STATE | 25 ns | 1kB | RAM, SDR, SRAM | 10b | 1KX8 | Asynchronous | 0.015A | 8b | COMMON | |||||||||||||||||||||||||||||||||||||||||||||||||||
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GD25VQ16CSIG | GigaDevice Semiconductor (HK) Limited | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 6 Weeks | Tube | Active | 3 (168 Hours) | ROHS3 Compliant | 8-SOIC (0.209, 5.30mm Width) | Surface Mount | -40°C~85°C TA | FLASH - NOR | 16Mb 2M x 8 | Non-Volatile | 2.3V~3.6V | 104MHz | FLASH | SPI - Quad I/O | 50μs, 3ms | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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GD25LQ16CTIGR | GigaDevice Semiconductor (HK) Limited | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 4 Weeks | Tape & Reel (TR) | Active | 3 (168 Hours) | ROHS3 Compliant | 8-SOIC (0.154, 3.90mm Width) | Surface Mount | -40°C~85°C TA | FLASH - NOR | 16Mb 2M x 8 | Non-Volatile | 1.65V~2.1V | 104MHz | FLASH | SPI - Quad I/O | 50μs, 2.4ms | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
S29GL064N90TAI030 | Cypress Semiconductor Corp | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 18 Weeks | Tray | 2015 | GL-N | Active | 3 (168 Hours) | 48 | 3A991.B.1.A | 18.4mm | ROHS3 Compliant | 48-TFSOP (0.724, 18.40mm Width) | not_compliant | 14mm | Surface Mount | -40°C~85°C TA | FLASH - NOR | ASYNCHRONOUS | 1.2mm | 8542.32.00.51 | 1 | e0 | TIN LEAD | DUAL | 240 | 3V | 30 | YES | 0.5mm | R-PDSO-G48 | 2.7V | Not Qualified | 3/3.3V | 3.6V | 64Mb 8M x 8 4M x 16 | Non-Volatile | 0.05mA | 2.7V~3.6V | 4MX16 | 16 | 67108864 bit | 0.000005A | 90 ns | 8 | 3V | YES | YES | YES | 8127 | 8/16words | YES | YES | FLASH | Parallel | 90ns | 8K64K | TOP | ||||||||||||||||||||||||||||||||||||||||||||||
 |
CY7C1480BV25-167AXC | Cypress Semiconductor Corp | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 8 Weeks | Surface Mount | Tray | 2012 | yes | Active | 3 (168 Hours) | 100 | 3A991.B.2.A | 2.5V | 4 | 20mm | ROHS3 Compliant | No | 100 | 100-LQFP | 72 Mb | Surface Mount | 0°C~70°C TA | SRAM - Synchronous, SDR | 1 | 400mA | e3 | Matte Tin (Sn) | QUAD | 260 | 2.5V | 40 | CY7C1480 | 100 | 0.65mm | 2.375V | 2.625V | 3-STATE | 3.4ns | 72Mb 2M x 36 | Volatile | 21b | 2.375V~2.625V | 2MX36 | 36 | Synchronous | 167MHz | 36b | COMMON | 2.38V | SRAM | Parallel | |||||||||||||||||||||||||||||||||||||||||||||||||||||
|
AT24C32D-SSHM-T | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 6 Weeks | Surface Mount | Tape & Reel (TR) | 2005 | yes | Active | 3 (168 Hours) | 8 | 5V | 4.925mm | ROHS3 Compliant | Lead Free | No | 8 | 8-SOIC (0.154, 3.90mm Width) | 2-Wire, I2C, Serial | No SVHC | 32 kb | 3.9mm | Surface Mount | -40°C~85°C TA | CMOS | 1.75mm | 1 | 3mA | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | DUAL | 260 | 40 | AT24C32 | 1.27mm | 5V | 550ns | 32Kb 4K x 8 | Non-Volatile | 1.7V~5.5V | 8 | 1MHz | 5ms | I2C | EEPROM | I2C | 5ms | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
AT24CM02-SSHM-B | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Tube | 1997 | yes | Active | 3 (168 Hours) | 8 | 4.9mm | ROHS3 Compliant | ALSO OPERATES 1.7V AT 100 KHZ | 8-SOIC (0.154, 3.90mm Width) | 1.75mm | 3.9mm | Surface Mount | -40°C~85°C TC | CMOS | SYNCHRONOUS | C04-057-SN | 1 | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | DUAL | 260 | 1.8V | 40 | AT24CM02 | YES | 1.27mm | R-PDSO-G8 | 1.7V | 5.5V | 450ns | 2Mb 256K x 8 | Non-Volatile | 1.7V~5.5V | 256KX8 | 8 | 2097152 bit | SERIAL | 1MHz | 5ms | I2C | EEPROM | I2C | 10ms | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IDT6116LA35TPGI | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 2008 | 24 | EAR99 | 85°C | -40°C | 31.75mm | RoHS Compliant | DIP | Parallel | 7.62mm | CMOS | 4.191mm | 8542.32.00.41 | 1 | e3 | MATTE TIN | DUAL | THROUGH-HOLE | 260 | 5V | 30 | 24 | INDUSTRIAL | NO | 2.54mm | 4.5V | SRAMs | Not Qualified | 5V | 5.5V | 3-STATE | RAM, SRAM - Asynchronous | 0.095mA | 2KX8 | 8 | 16384 bit | 0.00002A | 35 ns | COMMON | 2V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
71V632S5PFGI8 | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Surface Mount | Tape & Reel | 2015 | yes | Active | 3 (168 Hours) | 100 | 85°C | -40°C | 3.3V | 1 | 20mm | RoHS Compliant | Lead Free | No | 100 | ALSO REQUIRES 3.3V I/O SUPPLY | TQFP | Parallel | 3.63V | 3.135V | 2 Mb | 100MHz | 14mm | 1.4mm | CMOS | 1 | 200mA | e3 | Matte Tin (Sn) - annealed | QUAD | GULL WING | 260 | 3.3V | 30 | 100 | INDUSTRIAL | 0.65mm | SRAMs | 3-STATE | 5 ns | RAM, SRAM | 16b | 64KX32 | Synchronous | 32b | COMMON | |||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
7054L25PRFI | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Surface Mount | 2009 | no | Active | 3 (168 Hours) | 128 | EAR99 | 85°C | -40°C | 5V | 4 | 20mm | RoHS Compliant | Contains Lead | No | 128 | AUTOMATIC POWER DOWN; LOW POWER STANDBY MODE | TQFP | Parallel | 5.5V | 4.5V | 32 kb | 14mm | 1.4mm | CMOS | 1.6mm | 1 | 300mA | e0 | Tin/Lead (Sn/Pb) | QUAD | FLAT | 225 | 5V | 128 | INDUSTRIAL | 0.5mm | SRAMs | 5V | 3-STATE | 25 ns | RAM, SRAM | 12b | Asynchronous | 8b | COMMON | 2V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
|
6116SA150DB | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 10 Weeks | Bulk | 2013 | no | Active | 1 (Unlimited) | 24 | 125°C | -55°C | 5V | 1 | 32mm | RoHS Compliant | Contains Lead | No | 24 | CDIP | Parallel | 5.5V | 4.5V | 16 kb | 15.24mm | 2.9mm | CMOS | 4.826mm | 1 | e0 | Tin/Lead (Sn63Pb37) | DUAL | THROUGH-HOLE | 240 | 5V | 24 | MILITARY | NO | 2.54mm | SRAMs | 5V | 3-STATE | 150 ns | MIL-STD-883 Class B | 2kB | RAM, SDR, SRAM - Asynchronous | 11b | 0.09mA | 2KX8 | COMMON | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
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CY7C1360C-200BGC | Cypress Semiconductor Corp | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 6 Weeks | Surface Mount | Tray | no | Active | 3 (168 Hours) | 119 | 3A991.B.2.A | 3.3V | 4 | 22mm | Non-RoHS Compliant | Contains Lead | No | 119 | PIPELINED ARCHITECTURE | 119-BGA | 9 Mb | Surface Mount | 0°C~70°C TA | SRAM - Synchronous, SDR | 1 | 220mA | e0 | Tin/Lead (Sn/Pb) | BOTTOM | 220 | 3.3V | 20 | CY7C1360 | 119 | 1.27mm | 3.135V | 3.6V | 3-STATE | 3ns | 9Mb 256K x 36 | Volatile | 18b | 3.135V~3.6V | 256KX36 | 36 | Synchronous | 200MHz | 36b | COMMON | SRAM | Parallel | |||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
MX29GL512FLXFI-11G | Macronix | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 64 | 85°C | -40°C | 3.6V | 13mm | RoHS Compliant | Lead Free | Parallel | 512 Mb | 11mm | CMOS | ASYNCHRONOUS | 1.4mm | 1 | e1 | Tin/Silver/Copper (Sn95.5Ag4.0Cu0.5) | BOTTOM | BALL | 260 | 3V | 40 | INDUSTRIAL | YES | 1mm | R-PBGA-B64 | 2.7V | Flash Memories | Not Qualified | 3/3.3V | 110 ns | FLASH, NOR | 0.03mA | 32MX16 | 16 | 0.00002A | 8 | 3V | YES | YES | 512 | 8/16words | YES | 128K | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
S25FL512SAGBHBC13 | Cypress Semiconductor Corp | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 13 Weeks | Tape & Reel (TR) | Automotive, AEC-Q100, FL-S | Active | 3 (168 Hours) | 24 | 8mm | ROHS3 Compliant | ITS ALSO CONFIGURABLE AS 512MX1 | 24-TBGA | 6mm | Surface Mount | -40°C~105°C TA | FLASH - NOR | SYNCHRONOUS | 1.2mm | 8542.32.00.51 | 1 | BOTTOM | NOT SPECIFIED | 3V | NOT SPECIFIED | YES | 1mm | R-PBGA-B24 | 2.7V | 3.6V | AEC-Q100; TS 16949 | 512Mb 64M x 8 | Non-Volatile | 2.7V~3.6V | 64MX8 | 8 | 512753664 bit | SERIAL | 133MHz | 1 | 3V | FLASH | SPI - Quad I/O | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
93LC66AXT/SN | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tape & Reel (TR) | 2005 | yes | Obsolete | 1 (Unlimited) | 8 | EAR99 | 5.5V | 4.9mm | ROHS3 Compliant | Lead Free | No | 1000000 ERASE/WRITE CYCLES MIN; DATA RETENTION > 200 YEARS | 8-SOIC (0.154, 3.90mm Width) | 2-Wire, Serial | 4 kb | 3.9mm | Surface Mount | 0°C~70°C TA | CMOS | 1.75mm | 8542.32.00.51 | 1 | e3 | Matte Tin (Sn) | DUAL | 260 | 3V | 40 | 93LC66A | 8 | YES | 1.27mm | R-PDSO-G8 | 2.5V | 3/5V | 6V | 6 ms | 4Kb 512 x 8 | Non-Volatile | 0.003mA | 2.5V~5.5V | 512X8 | 8 | 2MHz | 0.00003A | 10 | 100000 Write/Erase Cycles | SOFTWARE | MICROWIRE | EEPROM | SPI | |||||||||||||||||||||||||||||||||||||||||||||||||
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25LC320/S | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tray | yes | Active | 1 (Unlimited) | 8 | EAR99 | ROHS3 Compliant | 1M ENDURANCE CYCLE; 200 YEARS DATA RETENTION | Die | Surface Mount | 0°C~70°C TA | CMOS | SYNCHRONOUS | 8542.32.00.51 | 1 | e3 | Matte Tin (Sn) | DUAL | 260 | 40 | 25LC320 | 8 | YES | 1.27mm | R-PDSO-G8 | 2.5V | Not Qualified | 3/5V | 5.5V | 32Kb 4K x 8 | Non-Volatile | 0.005mA | 2.5V~5.5V | 4KX8 | 8 | 32768 bit | SERIAL | 2MHz | 0.000001A | 200 | 1000000 Write/Erase Cycles | HARDWARE/SOFTWARE | 5ms | SPI | EEPROM | SPI | 5ms | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
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71V67602S150PFG8 | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 8 Weeks | Surface Mount | 2004 | yes | Active | 3 (168 Hours) | 100 | 70°C | 0°C | 3.3V | 1 | 20mm | RoHS Compliant | Lead Free | No | 100 | PIPELINED ARCHITECTURE | TQFP | Parallel | 3.465V | 3.135V | 9 Mb | 150MHz | 14mm | 1.4mm | CMOS | 1 | 305mA | e3 | Matte Tin (Sn) - annealed | QUAD | GULL WING | 260 | 3.3V | 30 | 100 | COMMERCIAL | 0.65mm | SRAMs | 3-STATE | 3.8 ns | 150MHz | 1.1MB | RAM, SDR, SRAM | 18b | 256KX36 | Synchronous | 0.05A | 36b | COMMON | |||||||||||||||||||||||||||||||||||||||||||||||||||
 |
71V35761SA166BGG | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Surface Mount | 2009 | yes | Active | 3 (168 Hours) | 119 | 70°C | 0°C | 3.3V | 1 | 14mm | RoHS Compliant | Lead Free | No | 119 | PIPELINED ARCHITECTURE | BGA | Parallel | 3.465V | 3.135V | 4.5 Mb | 166MHz | 22mm | 2.15mm | CMOS | 2.36mm | 1 | 320mA | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | BOTTOM | BALL | 260 | 3.3V | 30 | 119 | COMMERCIAL | SRAMs | 3-STATE | 3.5 ns | 166MHz | 576kB | RAM, SDR, SRAM | 17b | Synchronous | 0.03A | 36b | COMMON | ||||||||||||||||||||||||||||||||||||||||||||||||||||
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IDT71V3558S200BQ8 | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tape & Reel (TR) | 2007 | 3 (168 Hours) | 165 | 70°C | 0°C | Non-RoHS Compliant | 165 | Parallel | not_compliant | 200MHz | CMOS | SYNCHRONOUS | e0 | Tin/Lead (Sn63Pb37) | BOTTOM | BALL | 3.3V | COMMERCIAL | YES | 1mm | SRAMs | Not Qualified | 3.3V | 3-STATE | RAM, SRAM | 0.4mA | 256KX18 | 18 | 4718592 bit | 0.04A | 3.2 ns | COMMON | 3.14V |
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