Items : %s%s
Memory
Contact Plating
- Tin
ECCN Code
- 3A991.B.1.A
- EAR99
Factory Lead Time
- 11 Weeks
- 4 Weeks
- 5 Weeks
- 6 Weeks
- 7 Weeks
- 8 Weeks
JESD-609 Code
- e3
- e4
Manufacturer Package Identifier
- 24AA256-I/P
Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- 1 (Unlimited)
- 3 (168 Hours)
Mount
- Surface Mount
- Through Hole
Mounting Type
- Surface Mount
- Through Hole
Number of Pins
- 28
- 3
- 32
- 5
- 8
Number of Terminations
- 28
- 3
- 32
- 5
- 8
Operating Temperature
- -40°C~85°C TA
- 0°C~70°C TA
Package / Case
- 28-DIP (0.600, 15.24mm)
- 32-DIP (0.600, 15.24mm)
- 32-LCC (J-Lead)
- 32-TFSOP (0.488, 12.40mm Width)
- 8-DIP (0.300, 7.62mm)
- 8-SOIC (0.154, 3.90mm Width)
- 8-SOIC (0.209, 5.30mm Width)
- 8-TSSOP, 8-MSOP (0.118, 3.00mm Width)
- SC-74A, SOT-753
- TO-226-3, TO-92-3 (TO-226AA)
Packaging
- Bulk
- Tape & Reel (TR)
- Tray
- Tube
Part Status
- Active
- Obsolete
Pbfree Code
- yes
Published
- 1995
- 1997
- 2000
- 2002
- 2003
- 2004
- 2005
- 2007
- 2008
- 2009
- 2013
Series
- MoBL®
- SST39 MPF™
Surface Mount
- NO
- YES
Terminal Finish
- Matte Tin (Sn)
- Matte Tin (Sn) - annealed
- Nickel/Palladium/Gold (Ni/Pd/Au)
Termination
- SMD/SMT
- Through Hole
Weight
- 453.59237mg
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Datasheet | Factory Lead Time | Lifecycle Status | Mount | Packaging | Published | Series | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | ECCN Code | Max Operating Temperature | Min Operating Temperature | Operating Supply Voltage | Number of Ports | Length | RoHS Status | Lead Free | Contact Plating | Radiation Hardening | Number of Pins | Additional Feature | Package / Case | Interface | Max Supply Voltage | REACH SVHC | Reach Compliance Code | Min Supply Voltage | Density | Frequency | Height | Width | Thickness | Mounting Type | Operating Temperature | Technology | Operating Mode | Max Supply Current | Height Seated (Max) | HTS Code | Number of Functions | Nominal Supply Current | Max Frequency | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Supply Voltage | Time@Peak Reflow Temperature-Max (s) | Base Part Number | Pin Count | Temperature Grade | Surface Mount | Terminal Pitch | JESD-30 Code | Supply Voltage-Min (Vsup) | Subcategory | Qualification Status | Power Supplies | Supply Voltage-Max (Vsup) | Supplier Device Package | Output Characteristics | Access Time | Frequency (Max) | Memory Size | Memory Type | Address Bus Width | Supply Current-Max | Voltage - Supply | Organization | Memory Width | Memory Density | Sync/Async | Data Bus Width | Parallel/Serial | Clock Frequency | Standby Current-Max | Access Time (Max) | Word Size | Alternate Memory Width | Data Retention Time-Min | Endurance | Write Protection | Write Cycle Time-Max (tWC) | I/O Type | Programming Voltage | Data Polling | Toggle Bit | Command User Interface | Number of Sectors/Size | Page Size | Ready/Busy | Common Flash Interface | Serial Bus Type | I2C Control Byte | Refresh Cycles | Standby Voltage-Min | Memory Format | Memory Interface | Write Cycle Time - Word, Page | Sector Size | Sequential Burst Length | Interleaved Burst Length | Boot Block |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
IS49NLC18160-33BLI | ISSI, Integrated Silicon Solution Inc | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Surface Mount | Tray | Active | 3 (168 Hours) | 144 | EAR99 | 1.8V | 1 | 18.5mm | ROHS3 Compliant | 144 | AUTO REFRESH | 144-TBGA | 288 Mb | Surface Mount | -40°C~85°C TA | CMOS | SYNCHRONOUS | 1.2mm | 8542.32.00.28 | 1 | 525mA | 300MHz | BOTTOM | 1.8V | 144 | 1mm | 1.7V | Not Qualified | 1.5/1.81.82.5V | 1.9V | 3-STATE | 20ns | 288Mb 16M x 18 | Volatile | 23b | 1.7V~1.9V | 16MX18 | 18 | 18b | COMMON | DRAM | Parallel | 248 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IS43TR85120AL-125KBL-TR | ISSI, Integrated Silicon Solution Inc | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 8 Weeks | Tape & Reel (TR) | yes | Active | 3 (168 Hours) | 78 | 1.35V | 1 | 10.5mm | ROHS3 Compliant | 78 | AUTO/SELF REFRESH | 78-TFBGA | 4 Gb | Surface Mount | 0°C~95°C TC | SDRAM - DDR3L | SYNCHRONOUS | 1.2mm | 1 | BOTTOM | NOT SPECIFIED | 1.35V | NOT SPECIFIED | YES | 0.8mm | 1.283V | 1.45V | 20ns | 4Gb 512M x 8 | Volatile | 16b | 1.283V~1.45V | 512MX8 | 8 | 800MHz | DRAM | Parallel | 15ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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S29GL512S12TFVV20 | Cypress Semiconductor Corp | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 13 Weeks | Tray | 2017 | GL-S | Active | 3 (168 Hours) | 56 | 18.4mm | ROHS3 Compliant | 56-TFSOP (0.724, 18.40mm Width) | 14mm | Surface Mount | -40°C~105°C TA | FLASH - NOR | ASYNCHRONOUS | 1.2mm | 8542.32.00.51 | 1 | DUAL | 3V | YES | 0.5mm | R-PDSO-G56 | 2.7V | Not Qualified | 1.8/3.33/3.3V | 3.6V | 120ns | 512Mb 32M x 16 | Non-Volatile | 0.08mA | 1.65V~3.6V | 32MX16 | 16 | 536870912 bit | 0.0002A | 2.7V | YES | YES | YES | 512 | 16words | YES | YES | FLASH | Parallel | 60ns | 64K | BOTTOM/TOP | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IDT71V416YS10Y | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 2008 | 3 (168 Hours) | 44 | 70°C | 0°C | Non-RoHS Compliant | 44 | Parallel | not_compliant | CMOS | e0 | Tin/Lead (Sn85Pb15) | DUAL | J BEND | 3.3V | COMMERCIAL | YES | 1.27mm | SRAMs | Not Qualified | 3.3V | 3-STATE | RAM, SRAM - Asynchronous | 0.2mA | 256KX16 | 16 | 4194304 bit | 0.02A | 10 ns | COMMON | 3V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
AT25DQ321-MH-Y | Adesto Technologies | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tray | 1997 | Obsolete | 3 (168 Hours) | 8 | 6mm | RoHS Compliant | 8 | 8-UDFN Exposed Pad | Surface Mount | -40°C~85°C TC | CMOS | SYNCHRONOUS | 19mA | 0.6mm | 1 | DUAL | YES | 1.27mm | 2.7V | 3.6V | 32Mb 256Bytes x 16384 pages | Non-Volatile | 2.7V~3.6V | 32MX1 | 1 | 33554432 bit | 8b | SERIAL | 100MHz | 2.7V | FLASH | SPI | 7μs, 3ms | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
.png "QMP29GL064A90TFIR20") |
QMP29GL064A90TFIR20 | Cypress Semiconductor Corp | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Bulk | Obsolete | 1 (Unlimited) | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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AT49LV001-12JI | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tube | 1997 | Obsolete | 2 (1 Year) | Non-RoHS Compliant | 32-LCC (J-Lead) | Surface Mount | -40°C~85°C TC | FLASH | AT49LV001 | 32-PLCC (13.97x11.43) | 120ns | 1Mb 128K x 8 | Non-Volatile | 3V~3.6V | FLASH | Parallel | 50μs | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IS43DR16640B-25DBL-TR | ISSI, Integrated Silicon Solution Inc | 4.8457 |
Min: 1 Mult: 1 |
0.00000000 | 8 Weeks | Tape & Reel (TR) | Active | 3 (168 Hours) | 84 | ROHS3 Compliant | 84 | 84-TFBGA | Surface Mount | 0°C~70°C TA | SDRAM - DDR2 | BOTTOM | 1.8V | YES | 0.8mm | Not Qualified | 1.8V | 3-STATE | 400ps | 1Gb 64M x 16 | Volatile | 0.27mA | 1.7V~1.9V | 64MX16 | 16 | 1073741824 bit | 16b | 400MHz | 0.015A | COMMON | 8192 | DRAM | Parallel | 15ns | 48 | 48 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
MT48LC2M32B2B5-6A AAT:J | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 10 Weeks | Tray | 2013 | Automotive, AEC-Q100 | Obsolete | 3 (168 Hours) | 90 | 1 | 13mm | ROHS3 Compliant | AUTO/SELF REFRESH | 90-VFBGA | 8mm | Surface Mount | -40°C~105°C TA | SDRAM | SYNCHRONOUS | 1mm | 1 | BOTTOM | 3.3V | MT48LC2M32B2 | YES | 0.8mm | R-PBGA-B90 | 3V | 3.6V | 5.4ns | 64Mb 2M x 32 | Volatile | 3V~3.6V | 2MX32 | 32 | 67108864 bit | 167MHz | DRAM | Parallel | 12ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IS61WV6416BLL-12KLI | ISSI, Integrated Silicon Solution Inc | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 8 Weeks | Surface Mount | Tube | yes | Active | 2 (1 Year) | 44 | 3.3V | 1 | 28.575mm | ROHS3 Compliant | No | 44 | 44-BSOJ (0.400, 10.16mm Width) | 1 Mb | Surface Mount | -40°C~85°C TA | SRAM - Asynchronous | 3.75mm | 1 | 45mA | e3 | Matte Tin (Sn) - annealed | DUAL | 260 | 3.3V | 40 | 44 | 2.97V | 3.63V | 3-STATE | 1Mb 64K x 16 | Volatile | 16b | 3V~3.6V | 16 | Asynchronous | 0.05A | 16b | COMMON | SRAM | Parallel | 12ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
BR24G04-3 | ROHM Semiconductor | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 10 Weeks | Tube | 2005 | Obsolete | 1 (Unlimited) | 8 | 9.3mm | ROHS3 Compliant | SEATED HT-CALCULATED | 8-DIP (0.300, 7.62mm) | 2-Wire, I2C, Serial | 7.62mm | Through Hole | -40°C~85°C TA | CMOS | SYNCHRONOUS | 4.21mm | 1 | DUAL | NOT SPECIFIED | NOT SPECIFIED | NO | 2.54mm | R-PDIP-T8 | 1.6V | Not Qualified | 1.8/5V | 5.5V | 4Kb 512 x 8 | Non-Volatile | 0.002mA | 1.6V~5.5V | 512X8 | 8 | 4096 bit | 400kHz | 0.000002A | 40 | 1000000 Write/Erase Cycles | HARDWARE | 5ms | SPI | 1010DDMR | EEPROM | I2C | 5ms | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
AT28C256F-15JU | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Surface Mount | Tube | 1997 | yes | Active | 2 (1 Year) | 32 | 5V | 13.97mm | ROHS3 Compliant | Lead Free | Tin | No | 32 | 32-LCC (J-Lead) | Parallel, SPI | No SVHC | 256 kb | 5MHz | 11.43mm | Surface Mount | -40°C~85°C TC | CMOS | 3.556mm | 1 | 50mA | e3 | QUAD | 245 | 5V | 40 | AT28C256 | 1.27mm | 5V | 150ns | 256Kb 32K x 8 | Non-Volatile | 4.5V~5.5V | 8 | 0.0002A | 10 | 10000 Write/Erase Cycles | HARDWARE/SOFTWARE | 3ms | 5V | YES | YES | 64words | EEPROM | Parallel | 3ms | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
71V3556S133PFG8 | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 12 Weeks | Surface Mount | 2006 | yes | Active | 3 (168 Hours) | 100 | 70°C | 0°C | 3.3V | 1 | 20mm | RoHS Compliant | Lead Free | No | 100 | TQFP | Parallel | 3.465V | 3.135V | 4.5 Mb | 133MHz | 14mm | 1.4mm | CMOS | 1 | 300mA | e3 | Matte Tin (Sn) - annealed | QUAD | GULL WING | 260 | 3.3V | 30 | 100 | COMMERCIAL | 0.65mm | SRAMs | 3-STATE | 4.2 ns | 133MHz | 512kB | RAM, SDR, SRAM | 17b | Synchronous | 0.04A | 36b | COMMON | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
25LC512-E/SN16KVAO | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tube | Automotive, AEC-Q100 | Active | 3 (168 Hours) | 8 | 4.9mm | 8-SOIC (0.154, 3.90mm Width) | compliant | 3.9mm | Surface Mount | -40°C~125°C TA | CMOS | SYNCHRONOUS | 1.75mm | 1 | DUAL | 5V | 25LC512 | YES | 1.27mm | R-PDSO-G8 | 2.5V | 5.5V | 512Kb 64K x 8 | Non-Volatile | 2.5V~5.5V | 512KX1 | 1 | 524288 bit | SERIAL | 10MHz | 5ms | SPI | EEPROM | SPI | 5ms | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
MT41K512M16HA-125:A TR | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tape & Reel (TR) | Obsolete | 3 (168 Hours) | ROHS3 Compliant | 96-TFBGA | Surface Mount | 0°C~95°C TC | SDRAM - DDR3L | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 260 | 30 | 13.5ns | 8Gb 512M x 16 | Volatile | 1.283V~1.45V | 800MHz | DRAM | Parallel | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
CY7C09349AV-12AXCT | Cypress Semiconductor Corp | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tape & Reel (TR) | 1997 | Obsolete | 3 (168 Hours) | 100 | EAR99 | 14mm | ROHS3 Compliant | Lead Free | 100-LQFP | unknown | 14mm | Surface Mount | 0°C~70°C TA | SRAM - Dual Port, Synchronous | 1.6mm | 8542.32.00.41 | 1 | QUAD | 3.3V | CY7C09349 | 100 | YES | 0.5mm | S-PQFP-G100 | 3V | Not Qualified | 3.6V | 12ns | 72Kb 4K x 18 | Volatile | 3V~3.6V | 4KX18 | 18 | 73728 bit | 50MHz | SRAM | Parallel | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
M29F800DT70N6E | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tray | 2006 | Obsolete | 3 (168 Hours) | 85°C | -40°C | ROHS3 Compliant | 48-TFSOP (0.724, 18.40mm Width) | Parallel | Surface Mount | -40°C~85°C TA | FLASH - NOR | M29F800 | 48-TSOP | 70ns | 8Mb 1M x 8 512K x 16 | Non-Volatile | 4.5V~5.5V | FLASH | Parallel | 70ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
CY7C1426SV18-250BZC | Cypress Semiconductor Corp | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tray | Obsolete | 3 (168 Hours) | 70°C | 0°C | Non-RoHS Compliant | 165 | 165-LBGA | Parallel | 250MHz | Surface Mount | 0°C~70°C TA | SRAM - Synchronous, QDR II | CY7C1426 | 165-FBGA (13x15) | 36Mb 4M x 9 | Volatile | 1.7V~1.9V | 250MHz | SRAM | Parallel | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
BR24G04NUX-3TTR | ROHM Semiconductor | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 10 Weeks | Surface Mount | Tape & Reel (TR) | 1999 | Active | 1 (Unlimited) | 8 | 3mm | ROHS3 Compliant | Lead Free | Tin | 8 | 8-UFDFN Exposed Pad | 2-Wire, I2C, Serial | Unknown | 4 kb | 2mm | Surface Mount | -40°C~85°C TA | CMOS | SYNCHRONOUS | 0.6mm | 1 | DUAL | NOT SPECIFIED | 2.5V | NOT SPECIFIED | BR24G04 | 0.5mm | 1.6V | Not Qualified | 5.5V | 900 ns | 4Kb 512 x 8 | Non-Volatile | 0.002mA | 1.6V~5.5V | 8 | 400kHz | 0.000002A | 40 | 1000000 Write/Erase Cycles | HARDWARE | 5ms | I2C | 1010DDMR | EEPROM | I2C | 5ms | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
THGBMHG8C4LBAW7 | Kioxia America, Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tray | Obsolete | 3 (168 Hours) | Surface Mount | 169-VFBGA (11.5x13) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
W25Q64CVSSIG | Winbond Electronics | 0.5326 |
Min: 1 Mult: 1 |
0.00000000 | download | Surface Mount | Tube | 2011 | SpiFlash® | Obsolete | 3 (168 Hours) | 8 | 3A991.B.1.A | 3.3V | ROHS3 Compliant | No | 8 | 8-SOIC (0.209, 5.30mm Width) | SPI, Serial | 64 Mb | Surface Mount | -40°C~85°C TA | FLASH - NOR | 2.16mm | 1 | 18mA | DUAL | 3V | 8 | 1.27mm | 2.7V | 3.6V | 7 ns | 64Mb 8M x 8 | Non-Volatile | 24b | 2.7V~3.6V | 8 | Synchronous | 80MHz | 0.000005A | 8b | 20 | 100000 Write/Erase Cycles | HARDWARE/SOFTWARE | 2.7V | 256B | SPI | FLASH | SPI - Quad I/O | 50μs, 3ms | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
M24C02-RMN6TP | STMicroelectronics | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 13 Weeks | ACTIVE (Last Updated: 7 months ago) | Surface Mount | Tape & Reel (TR) | Active | 1 (Unlimited) | 8 | EAR99 | 6.5V | 4.9mm | ROHS3 Compliant | Lead Free | Gold | No | 8 | 8-SOIC (0.154, 3.90mm Width) | 2-Wire, I2C, Serial | No SVHC | 2 kb | 1.25mm | 3.9mm | Surface Mount | -40°C~85°C TA | CMOS | 1 | 800μA | e4 | DUAL | 260 | 2.5V | 30 | M24C02 | 8 | 1.27mm | 2/5V | 5.5V | 900ns | 2Kb 256 x 8 | Non-Volatile | 1.8V~5.5V | 400kHz | 0.000001A | 40 | 1000000 Write/Erase Cycles | HARDWARE | 5ms | I2C | 1010DDDR | EEPROM | I2C | 5ms | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
AT45DB161E-SSHF-B | Adesto Technologies | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 14 Weeks | Surface Mount | Bulk | 1997 | yes | Active | 1 (Unlimited) | 8 | EAR99 | 4.925mm | ROHS3 Compliant | Lead Free | Gold | 8 | 8-SOIC (0.154, 3.90mm Width) | SPI, Serial | 16 Mb | Surface Mount | -40°C~85°C TC | CMOS | 22mA | 1.75mm | 1 | 26mA | e4 | DUAL | 260 | 3V | NOT SPECIFIED | 8 | 1.27mm | 2.3V | Not Qualified | 2.5/3.3V | 3.6V | 7 ns | 16Mb 528Bytes x 4096 pages | Non-Volatile | 21b | 2.3V~3.6V | 16MX1 | 1 | Synchronous | 8b | 85MHz | 0.00001A | 20 | 100000 Write/Erase Cycles | HARDWARE/SOFTWARE | 2.7V | 528B | SPI | FLASH | SPI | 8μs, 4ms | ||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IS61NLP102418B-200B3LI-TR | ISSI, Integrated Silicon Solution Inc | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 12 Weeks | Tape & Reel (TR) | yes | Active | 3 (168 Hours) | 165 | 15mm | ROHS3 Compliant | 165 | 165-TBGA | 13mm | Surface Mount | -40°C~85°C TA | SRAM - Synchronous, SDR | 1.2mm | 1 | BOTTOM | NOT SPECIFIED | 3.3V | NOT SPECIFIED | YES | 1mm | 3.135V | 3.465V | 3ns | 18Mb 1M x 18 | Volatile | 3.135V~3.465V | 1MX18 | 18 | 18874368 bit | 200MHz | SRAM | Parallel | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
MT53E768M64D4SQ-046 AAT:A TR | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tape & Reel (TR) | Obsolete | 3 (168 Hours) | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MT29F2T08CUHBBM4-3R:B | Micron Technology Inc. | 171.6443 |
Min: 1 Mult: 1 |
0.00000000 | 12 Weeks | Bulk | Not For New Designs | RoHS Compliant | 0°C~70°C TA | FLASH - NAND | 2Tb 256G x 8 | Non-Volatile | 2.5V~3.6V | 333MHz | FLASH | Parallel | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
MX25L4006EM2I-12G | Macronix | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 8 | EAR99 | 85°C | -40°C | 3.6V | 5.28mm | RoHS Compliant | Lead Free | SOIC | SPI, Serial | 4 Mb | 86MHz | 5.23mm | CMOS | SYNCHRONOUS | 2.16mm | 8542.32.00.51 | 1 | DUAL | GULL WING | NOT SPECIFIED | 3.3V | NOT SPECIFIED | 8 | INDUSTRIAL | YES | 1.27mm | R-PDSO-G8 | 2.7V | Flash Memories | Not Qualified | 3/3.3V | 85MHz | FLASH, NOR | 0.02mA | 2MX2 | 2 | 0.00001A | 1 | 20 | 100000 Write/Erase Cycles | HARDWARE/SOFTWARE | 2.7V | SPI | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
X28HC64J-90 | Intersil (Renesas Electronics America) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Bulk | 2005 | no | Active | 3 (168 Hours) | 32 | EAR99 | 70°C | 0°C | 5V | 13.97mm | RoHS Compliant | Contains Lead | No | 32 | SOFTWARE DATA PROTECTION; 64 BYTE PAGE WRITE; 100 YEARS DATA RETENTION | LCC | Parallel | 64 kb | 90GHz | 11.43mm | CMOS | 3.55mm | 1 | e0 | Tin/Lead (Sn/Pb) | QUAD | J BEND | 225 | 5V | 32 | COMMERCIAL | YES | 1.27mm | 5V | 90 ns | 62.5kB | EEPROM | 0.04mA | 8KX8 | 8 | 0.0002A | 1000000 Write/Erase Cycles | 5ms | 5V | YES | YES | 64words | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
IS61LPS12836EC-200B3LI | ISSI, Integrated Silicon Solution Inc | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 12 Weeks | Tray | Active | 3 (168 Hours) | 165 | 3A991.B.2.A | 15mm | ROHS3 Compliant | 165 | 165-TFBGA | 13mm | Surface Mount | -40°C~85°C TA | SRAM - Synchronous, SDR | 1.2mm | 8542.32.00.41 | 1 | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | BOTTOM | 260 | 3.3V | 10 | 165 | YES | 1mm | 3.135V | Not Qualified | 2.52.5/3.3V | 3.465V | 3-STATE | 3.1ns | 4.5Mb 128K x 36 | Volatile | 0.22mA | 3.135V~3.465V | 128KX36 | 36 | 4718592 bit | 200MHz | 0.085A | COMMON | 3.14V | SRAM | Parallel | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
THGAMRG9T23BAIL | Kioxia America, Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 12 Weeks | Tray | e•MMC™ | Active | 3 (168 Hours) | RoHS Compliant | 153-WFBGA | Surface Mount | -25°C~85°C TA | FLASH - NAND | 512Gb 64G x 8 | Non-Volatile | FLASH | eMMC |
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