Items : %s%s
Memory
Contact Plating
- Tin
ECCN Code
- 3A991.B.1.A
- EAR99
Factory Lead Time
- 11 Weeks
- 4 Weeks
- 5 Weeks
- 6 Weeks
- 7 Weeks
- 8 Weeks
JESD-609 Code
- e3
- e4
Manufacturer Package Identifier
- 24AA256-I/P
Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- 1 (Unlimited)
- 3 (168 Hours)
Mount
- Surface Mount
- Through Hole
Mounting Type
- Surface Mount
- Through Hole
Number of Pins
- 28
- 3
- 32
- 5
- 8
Number of Terminations
- 28
- 3
- 32
- 5
- 8
Operating Temperature
- -40°C~85°C TA
- 0°C~70°C TA
Package / Case
- 28-DIP (0.600, 15.24mm)
- 32-DIP (0.600, 15.24mm)
- 32-LCC (J-Lead)
- 32-TFSOP (0.488, 12.40mm Width)
- 8-DIP (0.300, 7.62mm)
- 8-SOIC (0.154, 3.90mm Width)
- 8-SOIC (0.209, 5.30mm Width)
- 8-TSSOP, 8-MSOP (0.118, 3.00mm Width)
- SC-74A, SOT-753
- TO-226-3, TO-92-3 (TO-226AA)
Packaging
- Bulk
- Tape & Reel (TR)
- Tray
- Tube
Part Status
- Active
- Obsolete
Pbfree Code
- yes
Published
- 1995
- 1997
- 2000
- 2002
- 2003
- 2004
- 2005
- 2007
- 2008
- 2009
- 2013
Series
- MoBL®
- SST39 MPF™
Surface Mount
- NO
- YES
Terminal Finish
- Matte Tin (Sn)
- Matte Tin (Sn) - annealed
- Nickel/Palladium/Gold (Ni/Pd/Au)
Termination
- SMD/SMT
- Through Hole
Weight
- 453.59237mg
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Datasheet | Factory Lead Time | Mount | Packaging | Published | Series | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | ECCN Code | Max Operating Temperature | Min Operating Temperature | Operating Supply Voltage | Number of Ports | Length | RoHS Status | Lead Free | Contact Plating | Radiation Hardening | Number of Pins | Additional Feature | Package / Case | Interface | Max Supply Voltage | REACH SVHC | Reach Compliance Code | Min Supply Voltage | Density | Frequency | Width | Thickness | Mounting Type | Operating Temperature | Technology | Operating Supply Current | Operating Mode | Max Supply Current | Height Seated (Max) | HTS Code | Number of Functions | Nominal Supply Current | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Supply Voltage | Time@Peak Reflow Temperature-Max (s) | Base Part Number | Pin Count | Temperature Grade | Surface Mount | Terminal Pitch | JESD-30 Code | Supply Voltage-Min (Vsup) | Subcategory | Qualification Status | Power Supplies | Supply Voltage-Max (Vsup) | Supplier Device Package | Output Characteristics | Access Time | Input Capacitance | Screening Level | Memory Size | Memory Type | Address Bus Width | Supply Current-Max | Voltage - Supply | Organization | Memory Width | Memory Density | Sync/Async | Data Bus Width | Clock Frequency | Standby Current-Max | Access Time (Max) | Word Size | Alternate Memory Width | Data Retention Time-Min | Endurance | Write Protection | Write Cycle Time-Max (tWC) | I/O Type | Programming Voltage | Data Polling | Toggle Bit | Command User Interface | Number of Sectors/Size | Page Size | Ready/Busy | Common Flash Interface | Serial Bus Type | I2C Control Byte | Reverse Pinout | Refresh Cycles | Standby Voltage-Min | Memory Format | Memory Interface | Write Cycle Time - Word, Page | Sector Size | Sequential Burst Length | Interleaved Burst Length | Boot Block |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
.png "7050S25PQF") |
7050S25PQF | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 2013 | no | Discontinued | 70°C | 0°C | 5V | 4 | 24.13mm | Non-RoHS Compliant | Contains Lead | No | 132 | PQFP | 8 kb | 24.13mm | 3.55mm | e0 | Tin/Lead (Sn/Pb) | 132 | RAM, SRAM | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
W29GL032CT7A | Winbond Electronics | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tray | 2016 | yes | Obsolete | 3 (168 Hours) | 48 | 3A991.B.1.A | 8mm | ROHS3 Compliant | TOP BOOT BLOCK | 48-TFBGA | 6mm | Surface Mount | -40°C~85°C TA | FLASH - NOR | ASYNCHRONOUS | 1.2mm | 8542.32.00.51 | 1 | e1 | TIN SILVER COPPER | BOTTOM | NOT SPECIFIED | 3V | NOT SPECIFIED | 48 | YES | 0.8mm | R-PBGA-B48 | 2.7V | Not Qualified | 3/3.3V | 3.6V | 32Mb 4M x 8 2M x 16 | Non-Volatile | 0.055mA | 2.7V~3.6V | 32MX1 | 1 | 33554432 bit | 0.000005A | 70 ns | 8 | 3V | YES | YES | YES | 863 | 8/16words | YES | YES | FLASH | Parallel | 70ns | 8K64K | TOP | ||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IS43R86400D-6TL-TR | ISSI, Integrated Silicon Solution Inc | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 8 Weeks | Tape & Reel (TR) | yes | Active | 3 (168 Hours) | 66 | 1 | 22.22mm | ROHS3 Compliant | 66 | AUTO/SELF REFRESH | 66-TSSOP (0.400, 10.16mm Width) | Surface Mount | 0°C~70°C TA | SDRAM - DDR | SYNCHRONOUS | 370mA | 1.2mm | 1 | e3 | MATTE TIN | DUAL | 225 | 2.5V | NOT SPECIFIED | YES | 0.65mm | 2.3V | Not Qualified | 2.5V | 2.7V | 3-STATE | 700ps | 512Mb 64M x 8 | Volatile | 2.3V~2.7V | 64MX8 | 8 | 536870912 bit | 8b | 166MHz | 0.025A | COMMON | 8192 | DRAM | Parallel | 15ns | 248 | 248 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
71V321S25J | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Surface Mount | 2009 | no | Active | 3 (168 Hours) | 52 | EAR99 | 70°C | 0°C | 3.3V | 2 | 19mm | RoHS Compliant | Contains Lead | No | 52 | BATTERY BACKUP OPERATION | PLCC | Parallel | 3.6V | 3V | 16 kb | 19mm | 3.63mm | CMOS | 4.57mm | 1 | 130mA | e0 | Tin/Lead (Sn85Pb15) | QUAD | J BEND | 225 | 3.3V | 52 | INDUSTRIAL | SRAMs | 3-STATE | 25 ns | 2kB | RAM, SDR, SRAM | 22b | Asynchronous | 0.005A | 8b | COMMON | 3V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
7038L15PF8 | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Surface Mount | Tape & Reel | 2009 | no | Active | 3 (168 Hours) | 100 | 70°C | 0°C | 5V | 2 | 14mm | RoHS Compliant | Contains Lead | No | 100 | TQFP | Parallel | 5.5V | 4.5V | 1.1 Mb | 14mm | 1.4mm | CMOS | 1.6mm | 1 | 340mA | e0 | Tin/Lead (Sn85Pb15) | QUAD | GULL WING | 240 | 5V | 20 | 100 | COMMERCIAL | 0.5mm | SRAMs | 5V | 3-STATE | 15 ns | RAM, SRAM | 16b | 64KX18 | Asynchronous | 0.003A | 18b | COMMON | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
71V424S12YG | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 12 Weeks | Surface Mount | 2008 | yes | Active | 3 (168 Hours) | 36 | 70°C | 0°C | 3.3V | 1 | 23.4mm | RoHS Compliant | Lead Free | No | 36 | Parallel | 3.6V | 3V | 4 Mb | 10.2mm | 2.2mm | CMOS | 3.76mm | 1 | 170mA | e3 | Matte Tin (Sn) - annealed | DUAL | J BEND | 260 | 3.3V | 36 | COMMERCIAL | SRAMs | 3-STATE | 12 ns | 512kB | RAM, SDR, SRAM - Asynchronous | 19b | Asynchronous | 0.02A | 8b | COMMON | 3V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
71024S15YG | Renesas Electronics America Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 14 Weeks | Tube | Active | 3 (168 Hours) | ROHS3 Compliant | 32-BSOJ (0.400, 10.16mm Width) | Surface Mount | 0°C~70°C TA | SRAM - Asynchronous | IDT71024 | 32-SOJ | 15ns | 1Mb 128K x 8 | Volatile | 4.5V~5.5V | SRAM | Parallel | 15ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
24LC04BHT-E/ST | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 6 Weeks | Surface Mount | Tape & Reel (TR) | 2008 | Active | 1 (Unlimited) | 8 | EAR99 | 5V | 4.4mm | ROHS3 Compliant | Gold | 8 | 8-TSSOP (0.173, 4.40mm Width) | I2C, Serial | 4 kb | 3mm | Surface Mount | -40°C~125°C TA | CMOS | SYNCHRONOUS | 1.2mm | 1 | 3mA | e3 | Matte Tin (Sn) - annealed | DUAL | 260 | 40 | 24LC04BH | 8 | 0.65mm | Not Qualified | OPEN-DRAIN | 900ns | ISO/TS-16949 | 4Kb 256 x 8 x 2 | Non-Volatile | 2.5V~5.5V | 8 | 400kHz | 0.000005A | 200 | 1000000 Write/Erase Cycles | HARDWARE | 5ms | YES | 16words | I2C | 1010XXMR | NO | EEPROM | I2C | 5ms | ||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
7024S25PF | Renesas Electronics America Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tray | Obsolete | 3 (168 Hours) | Non-RoHS Compliant | 100-LQFP | Surface Mount | 0°C~70°C TA | SRAM - Dual Port, Asynchronous | IDT7024 | 64Kb 4K x 16 | Volatile | 4.5V~5.5V | SRAM | Parallel | 25ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
8 611 200 709 | Cypress Semiconductor Corp | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 6 Weeks | Tray | Obsolete | 1 (Unlimited) | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
7035S15PF8 | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Surface Mount | 2009 | no | Active | 3 (168 Hours) | 100 | EAR99 | 70°C | 0°C | 5V | 2 | 14mm | RoHS Compliant | Contains Lead | No | 100 | SEMAPHORE; AUTOMATIC POWER-DOWN | TQFP | Parallel | 5.5V | 4.5V | 144 kb | 14mm | 1.4mm | CMOS | 1.6mm | 1 | 310mA | e0 | Tin/Lead (Sn85Pb15) | QUAD | GULL WING | 240 | 5V | 20 | 100 | COMMERCIAL | 0.5mm | SRAMs | 5V | 3-STATE | 15 ns | 18kB | RAM, SDR, SRAM | 13b | 8KX8 | Asynchronous | 0.015A | 18b | COMMON | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
M29W640GT7AN6E | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tray | 2015 | Obsolete | 3 (168 Hours) | 48 | 18.4mm | ROHS3 Compliant | 48-TFSOP (0.724, 18.40mm Width) | 12mm | Surface Mount | -40°C~85°C TA | FLASH - NOR | ASYNCHRONOUS | 1.2mm | 1 | DUAL | NOT SPECIFIED | 3V | NOT SPECIFIED | M29W640 | YES | 0.5mm | R-PDSO-G48 | 2.7V | 3.6V | 64Mb 8M x 8 4M x 16 | Non-Volatile | 2.7V~3.6V | 4MX16 | 16 | 67108864 bit | 70 ns | 8 | 3V | FLASH | Parallel | 70ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
TC58NVG1S3HBAI4 | Toshiba | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 131 Weeks | 2013 | Active | 63 | 85°C | -40°C | 11mm | RoHS Compliant | 63 | TFBGA | Parallel | 9mm | CMOS | ASYNCHRONOUS | 1mm | 1 | BOTTOM | BALL | 3.3V | 63 | INDUSTRIAL | YES | 0.8mm | 2.7V | 3.6V | EEPROM, NAND | 256MX8 | 8 | 2147483648 bit | 3.3V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
71V65603S150BQG8 | Renesas Electronics America Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 13 Weeks | Tape & Reel (TR) | Active | 3 (168 Hours) | ROHS3 Compliant | 165-TBGA | Surface Mount | 0°C~70°C TA | SRAM - Synchronous, SDR (ZBT) | IDT71V65603 | 165-CABGA (13x15) | 3.8ns | 9Mb 256K x 36 | Volatile | 3.135V~3.465V | 150MHz | SRAM | Parallel | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
MT52L256M64D2PD-107 WT ES:B TR | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tape & Reel (TR) | Obsolete | 3 (168 Hours) | ROHS3 Compliant | 216-WFBGA | Surface Mount | -30°C~85°C TC | SDRAM - Mobile LPDDR3 | 216-FBGA (15x15) | 16Gb 256M x 64 | Volatile | 1.2V | 933MHz | DRAM | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IDT71V35761S200BQI8 | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tape & Reel (TR) | 2009 | 85°C | -40°C | Non-RoHS Compliant | 165 | Parallel | 200MHz | RAM, SRAM | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IDT6116LA35SOGI | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Surface Mount | Rail/Tube | 2008 | 1 (Unlimited) | 24 | EAR99 | 85°C | -40°C | 5V | 1 | RoHS Compliant | 24 | SOIC | Parallel | 5.5V | unknown | 4.5V | 16 kb | CMOS | 2.65mm | 1 | 95mA | e3 | Matte Tin (Sn) - annealed | DUAL | GULL WING | 260 | 5V | 30 | 24 | INDUSTRIAL | SRAMs | Not Qualified | 5V | 3-STATE | 35 ns | RAM, SRAM - Asynchronous | 11b | 2KX8 | 8 | Asynchronous | 8b | COMMON | 2V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
93LC76B-E/P | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 14 Weeks | Through Hole | Tube | 2012 | yes | Active | 1 (Unlimited) | 8 | EAR99 | 9.46mm | ROHS3 Compliant | No | 8 | 8-DIP (0.300, 7.62mm) | Serial | 8 kb | 7.62mm | Through Hole | -40°C~125°C TA | CMOS | 4.32mm | 1 | 3mA | e3 | Matte Tin (Sn) | DUAL | 2.5V | 93LC76B | 8 | 2.54mm | 3/5V | 5.5V | 8Kb 512 x 16 | Non-Volatile | 2.5V~5.5V | 8 | 3MHz | 0.000005A | 8 | 200 | 1000000 Write/Erase Cycles | SOFTWARE | 6ms | MICROWIRE | EEPROM | SPI | 5ms | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
70V657S12BCGI | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Surface Mount | Bulk | 2009 | yes | Active | 3 (168 Hours) | 256 | 85°C | -40°C | 3.3V | 2 | 17mm | RoHS Compliant | Lead Free | No | 256 | Parallel | 3.45V | 3.15V | 1.1 Mb | 17mm | 1.4mm | CMOS | 1.5mm | 1 | 515mA | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | BOTTOM | BALL | 260 | 3.3V | 30 | 256 | INDUSTRIAL | 1mm | SRAMs | 3-STATE | 12 ns | 128kB | RAM, SDR, SRAM | 30b | Asynchronous | 0.015A | 36b | COMMON | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
MT28GU01GAAA1EGC-0SIT | Micron Technology Inc. | 48.3430 |
Min: 1 Mult: 1 |
0.00000000 | download | Tray | 2012 | Automotive, AEC-Q100 | Obsolete | 3 (168 Hours) | 85°C | -40°C | 1.8V | ROHS3 Compliant | No | 64 | 64-TBGA | Parallel | 2V | No SVHC | 1.7V | 1 Gb | 133MHz | Surface Mount | -40°C~85°C TA | FLASH - NOR | 46mA | 64-TBGA (10x8) | 96ns | 1Gb 64M x 16 | Non-Volatile | 26b | 1.7V~2V | Asynchronous | 133MHz | 16b | FLASH | Parallel | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IS61WV102416FBLL-10T2LI | ISSI, Integrated Silicon Solution Inc | 10.0068 |
Min: 1 Mult: 1 |
0.00000000 | 8 Weeks | Tube | Active | 3 (168 Hours) | 54 | 22.22mm | ROHS3 Compliant | 54-TSOP (0.400, 10.16mm Width) | 10.16mm | Surface Mount | -40°C~85°C TA | SRAM - Dual Port, Asynchronous | 1.2mm | 8542.32.00.41 | 1 | NOT SPECIFIED | 3.3V | NOT SPECIFIED | YES | 0.8mm | R-PDSO-G54 | 2.4V | 3.6V | 16Mb 1M x 16 | Volatile | 2.4V~3.6V | 1MX16 | 16 | 16777216 bit | 10 ns | SRAM | Parallel | 10ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
MX25UW51245GXDQ00 | Macronix | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tray | MXSMIO™ | Active | 3 (168 Hours) | 24-TBGA | Surface Mount | -40°C~125°C TA | FLASH - NOR | 512Mb 64M x 8 | Non-Volatile | 1.7V~2V | 200MHz | FLASH | SPI - Quad I/O, QPI, DTR | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
M27C4001-15C1 | STMicroelectronics | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Surface Mount | Tube | Obsolete | 1 (Unlimited) | 32 | EAR99 | 5V | 13.97mm | ROHS3 Compliant | 32 | 32-LCC (J-Lead) | 4 Mb | 150GHz | 11.43mm | Surface Mount | 0°C~70°C TA | EPROM - OTP | 30mA | ASYNCHRONOUS | 3.56mm | 1 | 50mA | e3 | Matte Tin (Sn) | QUAD | NOT SPECIFIED | 5V | NOT SPECIFIED | M27C4001 | 32 | 1.27mm | OTP ROMs | Not Qualified | 5V | 3-STATE | 150ns | 6pF | 4Mb 512K x 8 | Non-Volatile | 4.5V~5.5V | 512KX8 | 8 | 0.0001A | COMMON | EPROM | Parallel | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
CY7C1355C-100BGC | Rochester Electronics, LLC | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tray | NoBL™ | Obsolete | 3 (168 Hours) | Non-RoHS Compliant | 119-BGA | Surface Mount | 0°C~70°C TA | SRAM - Synchronous, SDR | 119-PBGA (14x22) | 7.5ns | 9Mb 256K x 36 | Volatile | 3.135V~3.6V | 100MHz | SRAM | Parallel | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
CAT93C46RWI-G | Rochester Electronics, LLC | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tube | Obsolete | 3 (168 Hours) | Non-RoHS Compliant | 8-SOIC (0.154, 3.90mm Width) | Surface Mount | -40°C~85°C TA | EEPROM | 8-SOIC | 1Kb 128 x 8 64 x 16 | Non-Volatile | 1.8V~5.5V | 4MHz | EEPROM | SPI | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
THGBMFG6C1LBAIL | Kioxia America, Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tray | Obsolete | 3 (168 Hours) | Surface Mount | 153-FBGA (11.5x13) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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24AA64XT/ST | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 6 Weeks | Surface Mount | Tape & Reel (TR) | 2002 | yes | Active | 1 (Unlimited) | 8 | EAR99 | 4.4mm | ROHS3 Compliant | Lead Free | Tin | No | 8 | DATA RETENTION > 200 YEARS; 1000000 ERASE/WRITE CYCLES GUARANTEED | 8-TSSOP (0.173, 4.40mm Width) | I2C, Serial | 64 kb | 3mm | Surface Mount | 0°C~70°C TA | CMOS | 1.2mm | 1 | 3mA | e3 | DUAL | 260 | 2.5V | 40 | 24AA64 | 8 | 0.65mm | 2/5V | 5.5V | 900ns | 64Kb 8K x 8 | Non-Volatile | 1.8V~5.5V | 8 | 400kHz | 0.000001A | 200 | 1000000 Write/Erase Cycles | HARDWARE | 5ms | I2C | 1010DDDR | EEPROM | I2C | 5ms | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
W632GG6NB-09 | Winbond Electronics | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 10 Weeks | Tray | Active | 3 (168 Hours) | 96 | 1 | 13mm | ROHS3 Compliant | AUTO/SELF REFRESH | 96-VFBGA | 7.5mm | Surface Mount | 0°C~95°C TC | SDRAM - DDR3 | SYNCHRONOUS | 1mm | 1 | BOTTOM | 1.5V | YES | 0.8mm | R-PBGA-B96 | 1.425V | 1.575V | 20ns | 2Gb 128M x 16 | Volatile | 1.425V~1.575V | 128MX16 | 16 | 2147483648 bit | 1.067GHz | DRAM | Parallel | 15ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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25LC640/WF | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tray | Active | 1 (Unlimited) | ROHS3 Compliant | Die | Surface Mount | 0°C~70°C TA | EEPROM | 25LC640 | Die | 64Kb 8K x 8 | Non-Volatile | 2.5V~5.5V | 2MHz | EEPROM | SPI | 5ms | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IDT71V2548S100BG | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 2008 | 3 (168 Hours) | 119 | 3A991.B.2.A | 70°C | 0°C | 22mm | RoHS Compliant | PIPELINED ARCHITECTURE | BGA | Parallel | 100MHz | 14mm | CMOS | SYNCHRONOUS | 2.36mm | 8542.32.00.41 | 1 | e0 | Tin/Lead (Sn63Pb37) | BOTTOM | BALL | NOT SPECIFIED | 3.3V | NOT SPECIFIED | 119 | COMMERCIAL | YES | 1.27mm | 3.135V | SRAMs | Not Qualified | 2.53.3V | 3.465V | 3-STATE | RAM, SRAM | 0.25mA | 256KX18 | 18 | 4718592 bit | 0.04A | 5 ns | COMMON | 3.14V |
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7050S25PQF Integrated Device Technology (IDT)
132 Pin Memory IC 8 kb kb 24.13mm mm
Price: 0.0000
RFQ -
-
IS43R86400D-6TL-TR ISSI, Integrated Silicon Solution Inc
2.5V V Memory IC 22.22mm mm
Price: 0.0000
RFQ -
71V321S25J Integrated Device Technology (IDT)
Surface Mount 52 Pin Memory IC 16 kb kb 19mm mm 130mA mA 8b b
Price: 0.0000
RFQ -
7038L15PF8 Integrated Device Technology (IDT)
5V V Surface Mount 100 Pin Memory IC 1.1 Mb kb 14mm mm 340mA mA 18b b
Price: 0.0000
RFQ -
71V424S12YG Integrated Device Technology (IDT)
Surface Mount 36 Pin Memory IC 4 Mb kb 23.4mm mm 170mA mA 8b b
Price: 0.0000
RFQ -
-
24LC04BHT-E/ST Microchip Technology
Surface Mount 8 Pin Memory IC 24LC04BH 4 kb kb 4.4mm mm 3mA mA
Price: 0.0000
RFQ -
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7035S15PF8 Integrated Device Technology (IDT)
5V V Surface Mount 100 Pin Memory IC 144 kb kb 14mm mm 310mA mA 18b b
Price: 0.0000
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IDT6116LA35SOGI Integrated Device Technology (IDT)
5V V Surface Mount 24 Pin Memory IC 16 kb kb 95mA mA 8b b
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93LC76B-E/P Microchip Technology
3/5V V Through Hole 8 Pin Memory IC 93LC76B 8 kb kb 9.46mm mm 3mA mA
Price: 0.0000
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70V657S12BCGI Integrated Device Technology (IDT)
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Price: 0.0000
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MT28GU01GAAA1EGC-0SIT Micron Technology Inc.
Automotive, AEC-Q100 Memory IC Automotive, AEC-Q100 Series 1 Gb kb 46mA mA 16b b
Price: 48.3430
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IS61WV102416FBLL-10T2LI ISSI, Integrated Silicon Solution Inc
Memory IC 22.22mm mm
Price: 10.0068
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M27C4001-15C1 STMicroelectronics
5V V Surface Mount 32 Pin Memory IC M27C4001 4 Mb kb 13.97mm mm 50mA mA
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24AA64XT/ST Microchip Technology
2/5V V Surface Mount 8 Pin Memory IC 24AA64 64 kb kb 4.4mm mm 3mA mA
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IDT71V2548S100BG Integrated Device Technology (IDT)
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RFQ
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