Items : %s%s
Memory
Contact Plating
- Tin
ECCN Code
- 3A991.B.1.A
- EAR99
Factory Lead Time
- 11 Weeks
- 4 Weeks
- 5 Weeks
- 6 Weeks
- 7 Weeks
- 8 Weeks
JESD-609 Code
- e3
- e4
Manufacturer Package Identifier
- 24AA256-I/P
Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- 1 (Unlimited)
- 3 (168 Hours)
Mount
- Surface Mount
- Through Hole
Mounting Type
- Surface Mount
- Through Hole
Number of Pins
- 28
- 3
- 32
- 5
- 8
Number of Terminations
- 28
- 3
- 32
- 5
- 8
Operating Temperature
- -40°C~85°C TA
- 0°C~70°C TA
Package / Case
- 28-DIP (0.600, 15.24mm)
- 32-DIP (0.600, 15.24mm)
- 32-LCC (J-Lead)
- 32-TFSOP (0.488, 12.40mm Width)
- 8-DIP (0.300, 7.62mm)
- 8-SOIC (0.154, 3.90mm Width)
- 8-SOIC (0.209, 5.30mm Width)
- 8-TSSOP, 8-MSOP (0.118, 3.00mm Width)
- SC-74A, SOT-753
- TO-226-3, TO-92-3 (TO-226AA)
Packaging
- Bulk
- Tape & Reel (TR)
- Tray
- Tube
Part Status
- Active
- Obsolete
Pbfree Code
- yes
Published
- 1995
- 1997
- 2000
- 2002
- 2003
- 2004
- 2005
- 2007
- 2008
- 2009
- 2013
Series
- MoBL®
- SST39 MPF™
Surface Mount
- NO
- YES
Terminal Finish
- Matte Tin (Sn)
- Matte Tin (Sn) - annealed
- Nickel/Palladium/Gold (Ni/Pd/Au)
Termination
- SMD/SMT
- Through Hole
Weight
- 453.59237mg
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Datasheet | Factory Lead Time | Mount | Packaging | Published | Series | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | ECCN Code | Max Operating Temperature | Min Operating Temperature | Operating Supply Voltage | Number of Ports | Length | RoHS Status | Lead Free | Contact Plating | Radiation Hardening | Number of Pins | Additional Feature | Package / Case | Interface | Max Supply Voltage | Reach Compliance Code | Min Supply Voltage | Density | Frequency | Height | Width | Thickness | Mounting Type | Operating Temperature | Technology | Operating Mode | Height Seated (Max) | HTS Code | Number of Functions | Nominal Supply Current | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Supply Voltage | Time@Peak Reflow Temperature-Max (s) | Base Part Number | Pin Count | Temperature Grade | Surface Mount | Terminal Pitch | JESD-30 Code | Supply Voltage-Min (Vsup) | Subcategory | Qualification Status | Power Supplies | Supply Voltage-Max (Vsup) | Voltage | Supplier Device Package | Output Characteristics | Access Time | Frequency (Max) | Screening Level | Memory Size | Memory Type | Address Bus Width | Supply Current-Max | Voltage - Supply | Organization | Memory Width | Memory Density | Sync/Async | External Data Bus Width | Data Bus Width | uPs/uCs/Peripheral ICs Type | Parallel/Serial | Clock Frequency | Standby Current-Max | Access Time (Max) | Word Size | Output Enable | Alternate Memory Width | Data Retention Time-Min | Endurance | Write Protection | Write Cycle Time-Max (tWC) | I/O Type | Programming Voltage | Data Polling | Toggle Bit | Command User Interface | Number of Sectors/Size | Page Size | Ready/Busy | Serial Bus Type | I2C Control Byte | Number of Timers | Refresh Cycles | Standby Voltage-Min | Memory Format | Memory Interface | Write Cycle Time - Word, Page | Sector Size | Sequential Burst Length | Interleaved Burst Length | Boot Block |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
7025S55PF | Renesas Electronics America Inc. | 27.0094 |
Min: 1 Mult: 1 |
0.00000000 | download | Tray | Obsolete | 3 (168 Hours) | Non-RoHS Compliant | 100-LQFP | Surface Mount | 0°C~70°C TA | SRAM - Dual Port, Asynchronous | IDT7025 | 128Kb 8K x 16 | Volatile | 4.5V~5.5V | SRAM | Parallel | 55ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
.png "MTFC16GLXAM-WT") |
MTFC16GLXAM-WT | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Bulk | 2013 | e•MMC™ | Obsolete | 3 (168 Hours) | 85°C | -25°C | ROHS3 Compliant | 153 | MMC | 128 Gb | Surface Mount | -25°C~85°C TA | FLASH - NAND | MTFC16G | 2.7V | 128Gb 16G x 8 | Non-Volatile | 2.7V~3.6V | FLASH | MMC | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
71V35761S166PFGI8 | Renesas Electronics America Inc. | 51.5771 |
Min: 1 Mult: 1 |
0.00000000 | download | 10 Weeks | Tape & Reel (TR) | Active | 3 (168 Hours) | ROHS3 Compliant | 100-LQFP | Surface Mount | -40°C~85°C TA | SRAM - Synchronous, SDR | IDT71V35761 | 100-TQFP (14x14) | 3.5ns | 4.5Mb 128K x 36 | Volatile | 3.135V~3.465V | 166MHz | SRAM | Parallel | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
MX29F400CTTC-70G | Macronix | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 16 Weeks | Tray | 2009 | MX29F | Not For New Designs | 3 (168 Hours) | 48 | EAR99 | 5V | 18.4mm | ROHS3 Compliant | Lead Free | TOP BOOT BLOCK | 48-TFSOP (0.724, 18.40mm Width) | 4 b | 12mm | Surface Mount | 0°C~70°C TA | FLASH - NOR | ASYNCHRONOUS | 1.2mm | 8542.32.00.51 | 1 | e3 | Matte Tin (Sn) | DUAL | 260 | 5V | 40 | 48 | YES | 0.5mm | R-PDSO-G48 | Not Qualified | 5V | 4Mb 512K x 8 | Non-Volatile | 0.05mA | 4.5V~5.5V | 256KX16 | 16 | 0.000005A | 70 ns | 8 | 100000 Write/Erase Cycles | 5V | YES | YES | YES | 1217 | YES | FLASH | Parallel | 70ns | 16K8K32K64K | TOP | ||||||||||||||||||||||||||||||||||||||||||||||||||||
|
7130LA55PFI8 | Renesas Electronics America Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tape & Reel (TR) | Obsolete | 3 (168 Hours) | Non-RoHS Compliant | 64-LQFP | Surface Mount | -40°C~85°C TA | SRAM - Dual Port, Asynchronous | 8Kb 1K x 8 | Volatile | 4.5V~5.5V | SRAM | Parallel | 55ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
7006L25G | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Through Hole | Bulk | 2008 | Active | 70°C | 0°C | 5V | 2 | 29.46mm | RoHS Compliant | Contains Lead | No | 68 | Parallel | 5.5V | 4.5V | 128 kb | 29.46mm | 3.68mm | 220mA | 25 ns | 16kB | RAM, SDR, SRAM | 28b | Asynchronous | 8b | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
25LC020A/WF16K | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tray | Active | 1 (Unlimited) | ROHS3 Compliant | Die | Surface Mount | 0°C~70°C TA | EEPROM | 25LC020A | Die | 2Kb 256 x 8 | Non-Volatile | 2.5V~5.5V | 10MHz | EEPROM | SPI | 5ms | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
PC28F256P33BFA | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tray | 2008 | Axcell™ | Obsolete | 3 (168 Hours) | 64 | 3A991.B.1.A | 13mm | ROHS3 Compliant | No | 64 | 64-TBGA | Parallel, Serial | 256 Mb | Surface Mount | -40°C~85°C TC | FLASH - NOR | 1.2mm | 8542.32.00.51 | 1 | 31mA | e1 | TIN SILVER COPPER | BOTTOM | 260 | 3V | 30 | 28F256P33 | 64 | YES | 1mm | 2.5/3.3V | 2.3V | 256Mb 16M x 16 | Non-Volatile | 24b | 2.3V~3.6V | 16MX16 | 16 | Asynchronous | 52MHz | 0.00021A | 95 ns | 16b | NO | NO | 4255 | FLASH | Parallel | 95ns | BOTTOM | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
93C76C-I/P | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Through Hole | Tube | 2008 | yes | Active | 1 (Unlimited) | 8 | EAR99 | 5V | 10.16mm | Non-RoHS Compliant | Tin | No | 8 | 8-DIP (0.300, 7.62mm) | Serial | 8 kb | 4.953mm | 7.112mm | Through Hole | -40°C~85°C TA | CMOS | 1 | 3mA | e3 | DUAL | 5V | 93C76C | 8 | 2.54mm | 5V | 100 ns | 8Kb 1K x 8 512 x 16 | Non-Volatile | 4.5V~5.5V | 512X16 | 3MHz | 0.000001A | 200 | 1000000 Write/Erase Cycles | HARDWARE/SOFTWARE | 2ms | MICROWIRE | EEPROM | SPI | 2ms | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
7008L20PF8 | Renesas Electronics America Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tape & Reel (TR) | Obsolete | 3 (168 Hours) | Non-RoHS Compliant | 100-LQFP | Surface Mount | 0°C~70°C TA | SRAM - Dual Port, Asynchronous | IDT7008 | 512Kb 64K x 8 | Volatile | 4.5V~5.5V | SRAM | Parallel | 20ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
71V124SA15PHG | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Surface Mount | 2013 | yes | Active | 3 (168 Hours) | 32 | 70°C | 0°C | 3.3V | 1 | 20.95mm | RoHS Compliant | Lead Free | No | 32 | SOIC | Parallel | 3.6V | 3V | 1 Mb | 10.16mm | 1mm | CMOS | 1 | 100mA | e3 | Matte Tin (Sn) - annealed | DUAL | GULL WING | 260 | 3.3V | 30 | 32 | COMMERCIAL | SRAMs | 3-STATE | 15 ns | 128kB | RAM, SDR, SRAM - Asynchronous | 17b | Asynchronous | 8b | COMMON | 3V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
BU9880GUL-WE2 | ROHM Semiconductor | 0.6348 |
Min: 1 Mult: 1 |
0.00000000 | 16 Weeks | Surface Mount | Tape & Reel (TR) | 2012 | yes | Active | 1 (Unlimited) | 8 | EAR99 | 1.98mm | ROHS3 Compliant | Lead Free | 6-UFBGA, CSPBGA | 2-Wire, I2C, Serial | 64 kb | 1.58mm | Surface Mount | -40°C~85°C TA | CMOS | SYNCHRONOUS | 0.55mm | 8542.32.00.51 | 1 | BOTTOM | NOT SPECIFIED | 2.5V | NOT SPECIFIED | BU9880 | 8 | 0.5mm | R-PBGA-B8 | 1.7V | Not Qualified | 1.8/5V | 5.5V | 64Kb 8K x 8 | Non-Volatile | 0.002mA | 1.7V~5.5V | 8KX8 | 8 | 400kHz | 0.000002A | 40 | 1000000 Write/Erase Cycles | HARDWARE | 5ms | I2C | 1010000R | EEPROM | I2C | 5ms | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
MTFC16GJVEC-2F WT TR | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tape & Reel (TR) | e•MMC™ | Obsolete | 3 (168 Hours) | ROHS3 Compliant | Surface Mount | -25°C~85°C TA | FLASH - NAND | MTFC16G | 128Gb 16G x 8 | Non-Volatile | 2.7V~3.6V | FLASH | MMC | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
BR93G86-3A | ROHM Semiconductor | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 10 Weeks | Tube | 2013 | Obsolete | 1 (Unlimited) | 8 | 9.3mm | ROHS3 Compliant | ALSO OPERATES AT 1.7V WITH 1MHZ AND 2.5V WITH 2MHZ AND SEATED HT-CALCULATED | 8-DIP (0.300, 7.62mm) | Serial | 7.62mm | Through Hole | -40°C~85°C TA | CMOS | SYNCHRONOUS | 4.21mm | 1 | DUAL | NOT SPECIFIED | 5V | NOT SPECIFIED | NO | 2.54mm | R-PDIP-T8 | 4.5V | 5.5V | 16Kb 1K x 16 | Non-Volatile | 1.7V~5.5V | 1KX16 | 16 | 16384 bit | 3MHz | 5ms | 3-WIRE | EEPROM | SPI | 5ms | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IS43DR16160A-3DBL | ISSI, Integrated Silicon Solution Inc | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Surface Mount | Tray | yes | Obsolete | 3 (168 Hours) | 84 | EAR99 | 1.8V | 1 | 12.5mm | RoHS Compliant | No | 84 | AUTO/SELF REFRESH | 84-TFBGA | 256 Mb | Surface Mount | 0°C~70°C TA | SDRAM - DDR2 | 1.2mm | 8542.32.00.24 | 1 | 330mA | e1 | TIN SILVER COPPER | BOTTOM | 260 | 1.8V | 40 | 84 | 0.8mm | 1.7V | 1.9V | 3-STATE | 450ps | 256Mb 16M x 16 | Volatile | 15b | 1.7V~1.9V | 16MX16 | 16 | 16b | 333MHz | 0.005A | COMMON | 8192 | DRAM | Parallel | 15ns | 48 | 48 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
71V632S6PFGI8 | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Surface Mount | Tape & Reel | 2015 | yes | Active | 3 (168 Hours) | 100 | 85°C | -40°C | 3.3V | 1 | 20mm | RoHS Compliant | Lead Free | No | 100 | ALSO REQUIRES 3.3V I/O SUPPLY | TQFP | Parallel | 3.63V | 3.135V | 2 Mb | 83.3MHz | 14mm | 1.4mm | CMOS | 1 | 180mA | e3 | Matte Tin (Sn) - annealed | QUAD | GULL WING | 260 | 3.3V | 30 | 100 | INDUSTRIAL | 0.65mm | SRAMs | 3-STATE | 6 ns | RAM, SRAM | 16b | 64KX32 | Synchronous | 32b | COMMON | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
93AA66X/SN | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 28 Weeks | Surface Mount | Tube | 2004 | yes | Active | 1 (Unlimited) | 8 | EAR99 | 4.9mm | ROHS3 Compliant | Lead Free | Tin | No | 8 | 100K ERASE/WRITE CYCLES MIN; DATA RETENTION > 40 YEARS | 8-SOIC (0.154, 3.90mm Width) | Serial | 4 kb | 3.91mm | Surface Mount | 0°C~70°C TA | CMOS | 1.75mm | 1 | 3mA | e3 | DUAL | 260 | 3V | 40 | 93AA66 | 8 | 1.27mm | 2/5V | 5.5V | 3-STATE | TS 16949 | 4Kb 512 x 8 256 x 16 | Non-Volatile | 1.8V~5.5V | 256X16 | 16 | 2MHz | 0.00003A | 8 | 200 | 10000000 Write/Erase Cycles | SOFTWARE | 10ms | MICROWIRE | EEPROM | SPI | 10ms | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IDT6116SA35SO | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 2008 | 1 (Unlimited) | 24 | EAR99 | 70°C | 0°C | 1 | 15.4mm | Non-RoHS Compliant | SOIC | Parallel | not_compliant | 7.5mm | CMOS | 2.65mm | 8542.32.00.41 | 1 | e0 | Tin/Lead (Sn/Pb) | DUAL | GULL WING | 225 | 5V | 30 | 24 | COMMERCIAL | YES | 1.27mm | R-PDSO-G24 | 4.5V | SRAMs | Not Qualified | 5V | 5.5V | 3-STATE | RAM, SRAM - Asynchronous | 0.1mA | 2KX8 | 8 | 16384 bit | 0.002A | 35 ns | YES | COMMON | 4.5V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
MT29F256G08CBHBBJ4-3R:B TR | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tape & Reel (TR) | Not For New Designs | 3 (168 Hours) | ROHS3 Compliant | 0°C~70°C TA | FLASH - NAND | 256Gb 32G x 8 | Non-Volatile | 2.5V~3.6V | 333MHz | FLASH | Parallel | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
AT45DB011B-SC | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tube | 1997 | Obsolete | 1 (Unlimited) | Non-RoHS Compliant | 8-SOIC (0.209, 5.30mm Width) | Surface Mount | 0°C~70°C TC | AT45DB011 | 1Mb 264Bytes x 512 pages | Non-Volatile | 2.7V~3.6V | 20MHz | FLASH | SPI | 15ms | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
MTFC16GAKAEJP-4M IT | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 6 Weeks | Tray | e•MMC™ | Obsolete | 3 (168 Hours) | 153 | 13mm | ROHS3 Compliant | 153-VFBGA | 11.5mm | Surface Mount | -40°C~85°C TA | FLASH - NAND | SYNCHRONOUS | 1mm | 1 | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | BOTTOM | 260 | 30 | YES | 0.5mm | R-PBGA-B153 | 2.7V | 3.6V | 128Gb 16G x 8 | Non-Volatile | 1.7V~1.9V | 16GX8 | 8 | 137438953472 bit | PARALLEL | 2.7V | FLASH | MMC | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
S26KS256SDABHM030 | Cypress Semiconductor Corp | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 13 Weeks | Tray | 2017 | Automotive, AEC-Q100, HyperFlash™ KS | yes | Active | 3 (168 Hours) | 24 | 8mm | ROHS3 Compliant | 24-VBGA | 6mm | Surface Mount | -40°C~125°C TA | FLASH - NOR | SYNCHRONOUS | 1mm | 8542.32.00.51 | 1 | BOTTOM | NOT SPECIFIED | 1.8V | NOT SPECIFIED | YES | 1mm | R-PBGA-B24 | 1.7V | 1.95V | 96ns | AEC-Q100; TS 16949 | 256Mb 32M x 8 | Non-Volatile | 1.7V~1.95V | 32MX8 | 8 | 268435456 bit | 100MHz | 1.8V | FLASH | Parallel | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
71V65603S150BQGI8 | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 12 Weeks | 2007 | yes | Active | 3 (168 Hours) | 165 | 85°C | -40°C | 3.3V | 1 | 15mm | RoHS Compliant | Lead Free | No | 165 | PIPELINED ARCHITECTURE | Parallel | 3.465V | 3.135V | 9 Mb | 150MHz | 13mm | 1.2mm | CMOS | 1 | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | BOTTOM | BALL | 260 | 3.3V | 30 | 165 | INDUSTRIAL | YES | SRAMs | 3-STATE | 6.7 ns | 150MHz | 1.1MB | RAM, SDR, SRAM | 18b | 0.345mA | 256KX36 | 0.06A | COMMON | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
IS43DR16640B-3DBLI | ISSI, Integrated Silicon Solution Inc | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 8 Weeks | Surface Mount | Tray | Active | 3 (168 Hours) | 84 | EAR99 | 1.8V | 1 | 12.5mm | ROHS3 Compliant | Copper, Silver, Tin | No | 84 | AUTO/SELF REFRESH | 84-TFBGA | 1 Gb | Surface Mount | -40°C~85°C TA | SDRAM - DDR2 | 1.2mm | 8542.32.00.32 | 1 | 220mA | BOTTOM | 1.8V | 0.8mm | 1.7V | 1.9V | 3-STATE | 450ps | 1Gb 64M x 16 | Volatile | 16b | 1.7V~1.9V | 64MX16 | 16 | 16b | 333MHz | 0.015A | COMMON | 8192 | DRAM | Parallel | 15ns | 48 | 48 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
AT45DB081B-TI-2.5 | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tray | Obsolete | 3 (168 Hours) | Non-RoHS Compliant | 28-TSSOP (0.465, 11.80mm Width) | Surface Mount | -40°C~85°C TC | AT45DB081 | 8Mb 264Bytes x 4096 pages | Non-Volatile | 2.5V~3.6V | 15MHz | FLASH | SPI | 14ms | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
STK17TA8-RF45 | Rochester Electronics, LLC | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tube | yes | Obsolete | 3 (168 Hours) | 48 | 15.875mm | ROHS3 Compliant | 48-BSSOP (0.295, 7.50mm Width) | unknown | 7.51mm | Surface Mount | 0°C~70°C TA | NVSRAM (Non-Volatile SRAM) | 2.794mm | e3 | MATTE TIN | DUAL | 260 | 3V | 40 | 48 | YES | 0.635mm | R-PDSO-G48 | COMMERCIAL | 1Mb 128K x 8 | Non-Volatile | 2.7V~3.6V | 8 | TIMER, PROGRAMMABLE | 0.032MHz | 1 | NVSRAM | Parallel | 45ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IS61DDB21M18A-300B4L | ISSI, Integrated Silicon Solution Inc | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 12 Weeks | Tray | Active | 3 (168 Hours) | 165 | 1.8V | 2 | 15mm | ROHS3 Compliant | 165 | PIPELINED ARCHITECTURE | 165-LBGA | 18 Mb | Surface Mount | 0°C~70°C TA | SRAM - Synchronous, DDR II | 1.4mm | 1 | 550mA | BOTTOM | NOT SPECIFIED | 1.8V | NOT SPECIFIED | 165 | YES | 1mm | 1.71V | 1.89V | 450 ps | 18Mb 1M x 18 | Volatile | 20b | 1.71V~1.89V | 1MX18 | 18 | Synchronous | 300MHz | 18b | SRAM | Parallel | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
CY7C1364C-166BZI | Cypress Semiconductor Corp | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Surface Mount | Tube | 2004 | Obsolete | 3 (168 Hours) | 165 | 3A991.B.2.A | 3.3V | 4 | 15mm | Non-RoHS Compliant | No | 165 | PIPELINED ARCHITECTURE | 165-LBGA | 9 Mb | Surface Mount | -40°C~85°C TA | SRAM - Synchronous, SDR | 1 | 180mA | e0 | Tin/Lead (Sn/Pb) | BOTTOM | 220 | 3.3V | 30 | CY7C1364 | 1mm | 3.135V | 3.6V | 3.5ns | 8Mb 256K x 32 | Volatile | 18b | 3.135V~3.63V | 256KX32 | 32 | Synchronous | 166MHz | 32b | SRAM | Parallel | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
S99-50411 | Cypress Semiconductor Corp | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tray | Obsolete | 3 (168 Hours) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
S25FL208K0RMFI040 | Cypress Semiconductor Corp | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Surface Mount | Tray | 2013 | FL2-K | Obsolete | 3 (168 Hours) | 8 | EAR99 | 4.9mm | ROHS3 Compliant | Tin | No | 8 | 8-SOIC (0.154, 3.90mm Width) | SPI, Serial | 8 Mb | Surface Mount | -40°C~85°C TA | FLASH - NOR | 1.75mm | 1 | 25mA | DUAL | 3V | 1.27mm | 2.7V | 3/3.3V | 3.6V | 5 ns | 8Mb 1M x 8 | Non-Volatile | 1b | 2.7V~3.6V | 8 | Synchronous | 8b | 76MHz | 0.000032A | 8b | 20 | 100000 Write/Erase Cycles | HARDWARE/SOFTWARE | 3V | 256B | SPI | FLASH | SPI | 5ms |
-
-
MTFC16GLXAM-WT Micron Technology Inc.
e•MMC™ Memory IC e•MMC™ Series MTFC16G 128 Gb kb
Price: 0.0000
RFQ -
-
MX29F400CTTC-70G Macronix
5V V MX29F 48 Pin Memory IC MX29F Series 4 b kb 18.4mm mm
Price: 0.0000
RFQ -
-
7006L25G Integrated Device Technology (IDT)
Through Hole Memory IC 128 kb kb 29.46mm mm 220mA mA 8b b
Price: 0.0000
RFQ -
-
PC28F256P33BFA Micron Technology Inc.
2.5/3.3V V Axcell™ 64 Pin Memory IC Axcell™ Series 28F256P33 256 Mb kb 13mm mm 31mA mA 16b b
Price: 0.0000
RFQ -
93C76C-I/P Microchip Technology
5V V Through Hole 8 Pin Memory IC 93C76C 8 kb kb 10.16mm mm 3mA mA
Price: 0.0000
RFQ -
-
71V124SA15PHG Integrated Device Technology (IDT)
Surface Mount 32 Pin Memory IC 1 Mb kb 20.95mm mm 100mA mA 8b b
Price: 0.0000
RFQ -
BU9880GUL-WE2 ROHM Semiconductor
1.8/5V V Surface Mount 8 Pin Memory IC BU9880 64 kb kb 1.98mm mm
Price: 0.6348
RFQ -
MTFC16GJVEC-2F WT TR Micron Technology Inc.
e•MMC™ Memory IC e•MMC™ Series MTFC16G
Price: 0.0000
RFQ -
-
IS43DR16160A-3DBL ISSI, Integrated Silicon Solution Inc
Surface Mount 84 Pin Memory IC 256 Mb kb 12.5mm mm 330mA mA
Price: 0.0000
RFQ -
71V632S6PFGI8 Integrated Device Technology (IDT)
Surface Mount 100 Pin Memory IC 2 Mb kb 20mm mm 180mA mA 32b b
Price: 0.0000
RFQ -
93AA66X/SN Microchip Technology
2/5V V Surface Mount 8 Pin Memory IC 93AA66 4 kb kb 4.9mm mm 3mA mA
Price: 0.0000
RFQ -
-
-
-
-
S26KS256SDABHM030 Cypress Semiconductor Corp
Automotive, AEC-Q100, HyperFlash™ KS Memory IC Automotive, AEC-Q100, HyperFlash™ KS Series 8mm mm
Price: 0.0000
RFQ -
71V65603S150BQGI8 Integrated Device Technology (IDT)
165 Pin Memory IC 9 Mb kb 15mm mm
Price: 0.0000
RFQ -
IS43DR16640B-3DBLI ISSI, Integrated Silicon Solution Inc
Surface Mount Memory IC 1 Gb kb 12.5mm mm 220mA mA
Price: 0.0000
RFQ -
-
-
IS61DDB21M18A-300B4L ISSI, Integrated Silicon Solution Inc
165 Pin Memory IC 18 Mb kb 15mm mm 550mA mA 18b b
Price: 0.0000
RFQ -
CY7C1364C-166BZI Cypress Semiconductor Corp
Surface Mount Memory IC CY7C1364 9 Mb kb 15mm mm 180mA mA 32b b
Price: 0.0000
RFQ -
-
S25FL208K0RMFI040 Cypress Semiconductor Corp
3/3.3V V Surface Mount FL2-K Memory IC FL2-K Series 8 Mb kb 4.9mm mm 25mA mA 8b b
Price: 0.0000
RFQ
Need Help?
