Items : %s%s
Memory
Contact Plating
- Tin
ECCN Code
- 3A991.B.1.A
- EAR99
Factory Lead Time
- 11 Weeks
- 4 Weeks
- 5 Weeks
- 6 Weeks
- 7 Weeks
- 8 Weeks
JESD-609 Code
- e3
- e4
Manufacturer Package Identifier
- 24AA256-I/P
Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- 1 (Unlimited)
- 3 (168 Hours)
Mount
- Surface Mount
- Through Hole
Mounting Type
- Surface Mount
- Through Hole
Number of Pins
- 28
- 3
- 32
- 5
- 8
Number of Terminations
- 28
- 3
- 32
- 5
- 8
Operating Temperature
- -40°C~85°C TA
- 0°C~70°C TA
Package / Case
- 28-DIP (0.600, 15.24mm)
- 32-DIP (0.600, 15.24mm)
- 32-LCC (J-Lead)
- 32-TFSOP (0.488, 12.40mm Width)
- 8-DIP (0.300, 7.62mm)
- 8-SOIC (0.154, 3.90mm Width)
- 8-SOIC (0.209, 5.30mm Width)
- 8-TSSOP, 8-MSOP (0.118, 3.00mm Width)
- SC-74A, SOT-753
- TO-226-3, TO-92-3 (TO-226AA)
Packaging
- Bulk
- Tape & Reel (TR)
- Tray
- Tube
Part Status
- Active
- Obsolete
Pbfree Code
- yes
Published
- 1995
- 1997
- 2000
- 2002
- 2003
- 2004
- 2005
- 2007
- 2008
- 2009
- 2013
Series
- MoBL®
- SST39 MPF™
Surface Mount
- NO
- YES
Terminal Finish
- Matte Tin (Sn)
- Matte Tin (Sn) - annealed
- Nickel/Palladium/Gold (Ni/Pd/Au)
Termination
- SMD/SMT
- Through Hole
Weight
- 453.59237mg
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Datasheet | Factory Lead Time | Mount | Packaging | Published | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | ECCN Code | Max Operating Temperature | Min Operating Temperature | Operating Supply Voltage | Number of Ports | Length | RoHS Status | Lead Free | Contact Plating | Radiation Hardening | Number of Pins | Additional Feature | Package / Case | Interface | Max Supply Voltage | REACH SVHC | Reach Compliance Code | Min Supply Voltage | Density | Frequency | Height | Width | Thickness | Mounting Type | Operating Temperature | Technology | Operating Supply Current | Operating Mode | Height Seated (Max) | HTS Code | Number of Functions | Nominal Supply Current | Max Frequency | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Supply Voltage | Time@Peak Reflow Temperature-Max (s) | Base Part Number | Pin Count | Temperature Grade | Surface Mount | Terminal Pitch | JESD-30 Code | Supply Voltage-Min (Vsup) | Operating Temperature (Max) | Operating Temperature (Min) | Subcategory | Qualification Status | Power Supplies | Supply Voltage-Max (Vsup) | Supplier Device Package | Output Characteristics | Access Time | Frequency (Max) | Screening Level | Memory Size | Memory Type | Address Bus Width | Supply Current-Max | Voltage - Supply | Organization | Memory Width | Memory Density | Memory IC Type | Sync/Async | Data Bus Width | Parallel/Serial | Clock Frequency | Standby Current-Max | Access Time (Max) | Word Size | Output Enable | Data Retention Time-Min | Endurance | Write Protection | Write Cycle Time-Max (tWC) | I/O Type | Programming Voltage | Serial Bus Type | I2C Control Byte | Refresh Cycles | Standby Voltage-Min | Memory Format | Memory Interface | Write Cycle Time - Word, Page | Sequential Burst Length | Interleaved Burst Length |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IS42S32400B-6B | ISSI, Integrated Silicon Solution Inc | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tray | Obsolete | 2 (1 Year) | 90 | EAR99 | 1 | 13mm | Non-RoHS Compliant | AUTO/SELF REFRESH | 90-TFBGA | not_compliant | 8mm | Surface Mount | 0°C~70°C TA | SDRAM | SYNCHRONOUS | 1.2mm | 8542.32.00.02 | 1 | e0 | Tin/Lead (Sn/Pb) | BOTTOM | NOT SPECIFIED | 3.3V | NOT SPECIFIED | 90 | YES | 0.8mm | R-PBGA-B90 | 3V | Not Qualified | 3.3V | 3.6V | 3-STATE | 5.4ns | 128Mb 4M x 32 | Volatile | 0.18mA | 3V~3.6V | 4MX32 | 32 | 134217728 bit | 166MHz | 0.001A | COMMON | 4096 | DRAM | Parallel | 1248FP | 1248 | ||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IS49NLC18160-33BL | ISSI, Integrated Silicon Solution Inc | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tray | Active | 3 (168 Hours) | 144 | EAR99 | 1 | 18.5mm | ROHS3 Compliant | 144 | AUTO REFRESH | 144-TBGA | Surface Mount | 0°C~70°C TA | CMOS | SYNCHRONOUS | 1.2mm | 8542.32.00.28 | 1 | 300MHz | BOTTOM | 1.8V | 144 | YES | 1mm | 1.7V | Not Qualified | 1.5/1.81.82.5V | 1.9V | 3-STATE | 20ns | 288Mb 16M x 18 | Volatile | 0.819mA | 1.7V~1.9V | 16MX18 | 18 | 301989888 bit | 18b | COMMON | DRAM | Parallel | 248 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IDT71V424L15Y | Renesas Electronics America Inc. | 0.7839 |
Min: 1 Mult: 1 |
0.00000000 | download | Tube | Obsolete | 3 (168 Hours) | Non-RoHS Compliant | 36-BSOJ (0.400, 10.16mm Width) | Surface Mount | 0°C~70°C TA | SRAM - Asynchronous | IDT71V424 | 36-SOJ | 15ns | 4Mb 512K x 8 | Volatile | 3V~3.6V | SRAM | Parallel | 15ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
71V67603S133PFG8 | Renesas Electronics America Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 13 Weeks | Tape & Reel (TR) | Active | 3 (168 Hours) | ROHS3 Compliant | 100-LQFP | Surface Mount | 0°C~70°C TA | SRAM - Synchronous, SDR | IDT71V67603 | 4.2ns | 9Mb 256K x 36 | Volatile | 3.135V~3.465V | 133MHz | SRAM | Parallel | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
.png "7052L35GB") |
7052L35GB | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Through Hole | Bulk | 2009 | Active | 125°C | -55°C | 5V | 4 | 30.48mm | RoHS Compliant | Contains Lead | No | 108 | Parallel | 5.5V | 4.5V | 16 kb | 30.48mm | 3.68mm | 300mA | 35 ns | RAM, SRAM | 11b | Asynchronous | 8b | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
MT29F1G08ABBDAH4:D TR | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 3 Weeks | Tape & Reel (TR) | 1996 | Obsolete | 3 (168 Hours) | ROHS3 Compliant | 63-VFBGA | Surface Mount | 0°C~70°C TA | FLASH - NAND | MT29F1G08 | 1Gb 128M x 8 | Non-Volatile | 1.7V~1.95V | FLASH | Parallel | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IDT71V424S10Y | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 2009 | no | 3 (168 Hours) | 36 | 3A991.B.2.A | 70°C | 0°C | 23.495mm | RoHS Compliant | 36 | Parallel | 10.16mm | CMOS | 3.683mm | 8542.32.00.41 | 1 | e0 | Tin/Lead (Sn85Pb15) | DUAL | J BEND | 225 | 3.3V | 30 | 36 | COMMERCIAL | YES | 1.27mm | 3V | SRAMs | Not Qualified | 3.3V | 3.6V | 3-STATE | RAM, SRAM - Asynchronous | 0.18mA | 512KX8 | 8 | 4194304 bit | 0.02A | 10 ns | COMMON | 3V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
7132LA100CB | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 10 Weeks | Through Hole | Bulk | 2007 | Active | 125°C | -55°C | 5V | 2 | 61.72mm | RoHS Compliant | Contains Lead | No | 48 | DIP | Parallel | 5.5V | 4.5V | 16 kb | 15.24mm | 3.3mm | 140mA | 100 ns | 2kB | RAM, SDR, SRAM | 22b | Asynchronous | 8b | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
7024L55GB | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 10 Weeks | Through Hole | Bulk | 2000 | no | Active | 1 (Unlimited) | 84 | 125°C | -55°C | 5V | 2 | 27.94mm | RoHS Compliant | Contains Lead | No | 84 | INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN | Parallel | 5.5V | 4.5V | 64 kb | 27.94mm | 3.68mm | CMOS | 1 | 250mA | e0 | Tin/Lead (Sn/Pb) | PERPENDICULAR | PIN/PEG | 240 | 5V | 20 | 84 | MILITARY | SRAMs | 5V | 3-STATE | 55 ns | 38535Q/M;38534H;883B | RAM, SRAM | 24b | 4KX16 | Asynchronous | 0.004A | 16b | COMMON | 2V | |||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IS41C16100C-50TI | ISSI, Integrated Silicon Solution Inc | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tray | Active | 3 (168 Hours) | 44 | EAR99 | 1 | 20.95mm | ROHS3 Compliant | CAS BEFORE RAS/SELF REFRESH/AUTO REFRESH | 50-TSOP (0.400, 10.16mm Width), 44 Leads | 10.16mm | Surface Mount | -40°C~85°C TA | DRAM - EDO | SYNCHRONOUS | 1.2mm | 8542.32.00.02 | 1 | DUAL | 5V | 44 | YES | 0.8mm | R-PDSO-G44 | 4.5V | Not Qualified | 5.5V | 25ns | 16Mb 1M x 16 | Volatile | 4.5V~5.5V | 1MX16 | 16 | 16777216 bit | DRAM | Parallel | 85ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
AT24C02A-10PC-1.8 | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tube | Obsolete | Not Applicable | Non-RoHS Compliant | 8-DIP (0.300, 7.62mm) | Through Hole | 0°C~70°C TA | EEPROM | AT24C02 | 8-PDIP | 900ns | 2Kb 256 x 8 | Non-Volatile | 1.8V~5.5V | 400kHz | EEPROM | I2C | 5ms | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IDT71016S12YGI | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 2008 | yes | 3 (168 Hours) | 44 | 3A991.B.2.B | 85°C | -40°C | 28.575mm | RoHS Compliant | 44 | Parallel | unknown | 10.16mm | CMOS | 3.683mm | 8542.32.00.41 | 1 | e3 | Matte Tin (Sn) - annealed | DUAL | J BEND | 260 | 5V | 30 | 44 | INDUSTRIAL | YES | 1.27mm | 4.5V | SRAMs | Not Qualified | 5V | 5.5V | 3-STATE | RAM, SRAM - Asynchronous | 0.21mA | 64KX16 | 16 | 1048576 bit | 0.01A | 12 ns | COMMON | 4.5V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
71V25761S200PFG8 | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 12 Weeks | Surface Mount | 2009 | yes | Active | 3 (168 Hours) | 100 | 70°C | 0°C | 3.3V | 1 | 20mm | RoHS Compliant | Lead Free | No | 100 | PIPELINED ARCHITECTURE | TQFP | Parallel | 3.465V | 3.135V | 4.5 Mb | 200MHz | 14mm | 1.4mm | CMOS | 1 | 360mA | e3 | Matte Tin (Sn) - annealed | QUAD | GULL WING | 260 | 3.3V | 30 | 100 | COMMERCIAL | 0.65mm | SRAMs | 3-STATE | 3.1 ns | 200MHz | 512kB | RAM, SDR, SRAM | 17b | Synchronous | 0.03A | 36b | COMMON | |||||||||||||||||||||||||||||||||||||||||||||||||||
 |
MT53D384M32D2DS-053 WT ES:C TR | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tape & Reel (TR) | Obsolete | 3 (168 Hours) | ROHS3 Compliant | 200-WFBGA | Surface Mount | -30°C~85°C TC | SDRAM - Mobile LPDDR4 | 200-WFBGA (10x14.5) | 12Gb 384M x 32 | Volatile | 1.1V | 1866MHz | DRAM | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
M48Z58Y-70PC1 | STMicroelectronics | 15.8048 |
Min: 1 Mult: 1 |
0.00000000 | download | 25 Weeks | Through Hole | Tube | Active | 1 (Unlimited) | 28 | EAR99 | 5V | 1 | 39.625mm | ROHS3 Compliant | Lead Free | No | 28 | BATTERY BACK-UP; POWER SUPPLY WRITE PROTECTION | 28-DIP Module (0.600, 15.24mm) | No SVHC | 64 kb | 70GHz | Through Hole | 0°C~70°C TA | NVSRAM (Non-Volatile SRAM) | 50mA | 9.65mm | 8542.32.00.41 | 1 | 50mA | e3 | Matte Tin (Sn) | DUAL | 5V | M48Z58 | 28 | 2.54mm | SRAMs | 5V | 3-STATE | 64Kb 8K x 8 | Non-Volatile | 4.5V~5.5V | 8KX8 | 8 | 8b | 0.003A | 70 ns | 8b | YES | NVSRAM | Parallel | 70ns | ||||||||||||||||||||||||||||||||||||||||||||||||||
 |
71342LA25J | Renesas Electronics America Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tube | Obsolete | 3 (168 Hours) | Non-RoHS Compliant | 52-LCC (J-Lead) | Surface Mount | 0°C~70°C TA | SRAM - Dual Port, Asynchronous | IDT71342 | 52-PLCC (19.13x19.13) | 25ns | 32Kb 4K x 8 | Volatile | 4.5V~5.5V | SRAM | Parallel | 25ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
MT53B128M32D1DS-062 AAT:A | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 16 Weeks | Tray | Active | 3 (168 Hours) | ROHS3 Compliant | 200-WFBGA | Surface Mount | -40°C~105°C TA | SDRAM - Mobile LPDDR4 | 4Gb 128M x 32 | Volatile | 1.1V | 1600MHz | DRAM | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IS61NLP25618EC-200TQLI-TR | ISSI, Integrated Silicon Solution Inc | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 12 Weeks | Tape & Reel (TR) | Active | 3 (168 Hours) | 3.3V | 2 | ROHS3 Compliant | 100 | 100-LQFP | 4 Mb | Surface Mount | -40°C~85°C TA | SRAM - Synchronous, SDR | 220mA | 3.1ns | 4.5Mb 256K x 18 | Volatile | 18b | 3.135V~3.465V | Synchronous | 200MHz | 18b | SRAM | Parallel | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IDT71V2546S100PF | Renesas Electronics America Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tray | Obsolete | 3 (168 Hours) | Non-RoHS Compliant | 100-LQFP | Surface Mount | 0°C~70°C TA | SRAM - Synchronous, SDR (ZBT) | IDT71V2546 | 5ns | 4.5Mb 128K x 36 | Volatile | 3.135V~3.465V | 100MHz | SRAM | Parallel | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
70V24L20JI8 | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Surface Mount | 2004 | no | Active | 1 (Unlimited) | 84 | EAR99 | 85°C | -40°C | 3.3V | 2 | 29.21mm | RoHS Compliant | Contains Lead | No | 84 | INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN | PLCC | Parallel | 3.6V | 3V | 64 kb | 29.21mm | 3.63mm | CMOS | 1 | 195mA | e0 | Tin/Lead (Sn85Pb15) | QUAD | J BEND | 225 | 3.3V | 84 | INDUSTRIAL | SRAMs | 3-STATE | 20 ns | 8kB | RAM, SDR, SRAM | 24b | 4KX16 | Asynchronous | 16b | COMMON | 3V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
24LC1025-I/SM | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Surface Mount | Tube | 2005 | yes | Active | 1 (Unlimited) | 8 | EAR99 | 5V | 5.26mm | ROHS3 Compliant | Lead Free | Tin | No | 8 | 200 YEARS DATA RETENTION | 8-SOIC (0.209, 5.30mm Width) | 2-Wire, I2C, Serial | No SVHC | 1 Mb | 1.98mm | 5.25mm | Surface Mount | -40°C~85°C TA | CMOS | 1 | 5mA | e3 | DUAL | 3V | 24LC1025 | 8 | 1.27mm | 900ns | 1Mb 128K x 8 | Non-Volatile | 2.5V~5.5V | 400kHz | 0.000005A | 200 | 1000000 Write/Erase Cycles | HARDWARE | 5ms | I2C | 1010MDDR | EEPROM | I2C | 5ms | |||||||||||||||||||||||||||||||||||||||||||||||||||
 |
MT49H32M9FM-33:B | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Surface Mount | Tray | 2015 | Discontinued | 3 (168 Hours) | 144 | 1.8V | 1 | 18.5mm | ROHS3 Compliant | No | 144 | AUTO REFRESH | 144-TFBGA | 288 Mb | Surface Mount | 0°C~95°C TC | CMOS | 1.2mm | 1 | 300MHz | BOTTOM | 1.8V | 1mm | 1.7V | 1.5/1.81.82.5V | 1.9V | 3-STATE | 20ns | 288Mb 32M x 9 | Volatile | 24b | 1.7V~1.9V | 32MX9 | 9 | 9b | COMMON | DRAM | Parallel | 248 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
7007L15PFG8 | Renesas Electronics America Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tape & Reel (TR) | Active | 3 (168 Hours) | ROHS3 Compliant | 80-LQFP | Surface Mount | 0°C~70°C TA | SRAM - Dual Port, Asynchronous | 256Kb 32K x 8 | Volatile | 4.5V~5.5V | SRAM | Parallel | 15ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
71V35761SA183BG8 | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Surface Mount | 2009 | no | Active | 3 (168 Hours) | 119 | 70°C | 0°C | 3.3V | 1 | 14mm | RoHS Compliant | Contains Lead | No | 119 | PIPELINED ARCHITECTURE | BGA | Parallel | 3.465V | 3.135V | 4.5 Mb | 183MHz | 22mm | 2.15mm | CMOS | 2.36mm | 1 | 340mA | e0 | Tin/Lead (Sn63Pb37) | BOTTOM | BALL | 225 | 3.3V | 20 | 119 | COMMERCIAL | SRAMs | 3-STATE | 3.3 ns | 183MHz | 512kB | RAM, SDR, SRAM | 17b | Synchronous | 0.03A | 36b | COMMON | |||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IDT71V65903S85PF | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Surface Mount | 2009 | 3 (168 Hours) | 100 | 70°C | 0°C | 3.3V | 1 | 20mm | Non-RoHS Compliant | 100 | FLOW-THROUGH ARCHITECTURE | TQFP | Parallel | 3.465V | not_compliant | 3.135V | 9 Mb | 91MHz | CMOS | 1 | 225mA | e0 | QUAD | GULL WING | 240 | 3.3V | 20 | 100 | COMMERCIAL | 0.65mm | SRAMs | Not Qualified | 3-STATE | 8.5 ns | RAM, SRAM | 19b | 18 | Synchronous | 0.04A | 18b | COMMON | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IDT71V416VS15BEGI | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 2005 | 3 (168 Hours) | 48 | 3A991.B.2.A | 85°C | -40°C | 9mm | RoHS Compliant | TFBGA | Parallel | unknown | 9mm | CMOS | 1.2mm | 8542.32.00.41 | 1 | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | BOTTOM | BALL | 260 | 3.3V | 30 | 48 | INDUSTRIAL | YES | 0.75mm | S-PBGA-B48 | 3V | SRAMs | Not Qualified | 3.3V | 3.6V | 3-STATE | RAM, SRAM - Asynchronous | 0.17mA | 256KX16 | 16 | 4194304 bit | 0.02A | 15 ns | COMMON | 3V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
S34ML04G100TFB000 | SkyHigh Memory Limited | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tray | Active | 3 (168 Hours) | 48 | 18.4mm | RoHS Compliant | 12mm | CMOS | ASYNCHRONOUS | 1.2mm | 1 | DUAL | GULL WING | NOT SPECIFIED | 3.3V | NOT SPECIFIED | INDUSTRIAL | YES | 0.5mm | R-PDSO-G48 | 2.7V | 105°C | -40°C | 3.6V | AEC-Q100 | 512MX8 | 8 | 4294967296 bit | FLASH | PARALLEL | 3V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
7130LA20PF | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Surface Mount | 2005 | Active | 70°C | 0°C | 5V | 2 | 14mm | RoHS Compliant | Contains Lead | No | 64 | TQFP | Parallel | 5.5V | 4.5V | 8 kb | 14mm | 1.4mm | 200mA | 20 ns | 1kB | RAM, SDR, SRAM | 10b | Asynchronous | 8b | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
IDT71V547S100PF8 | Renesas Electronics America Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tape & Reel (TR) | Obsolete | 3 (168 Hours) | Non-RoHS Compliant | 100-LQFP | Surface Mount | 0°C~70°C TA | SRAM - Synchronous, SDR (ZBT) | IDT71V547 | 10ns | 4.5Mb 128K x 36 | Volatile | 3.135V~3.465V | SRAM | Parallel | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
IDT70P3337S233RM | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 2006 | 576 | 3A991.B.2.A | 70°C | 0°C | 25mm | Non-RoHS Compliant | FCBGA | Parallel | 233MHz | 25mm | CMOS | SYNCHRONOUS | 2.55mm | 8542.32.00.41 | 1 | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | BOTTOM | BALL | 260 | 1.8V | 40 | 576 | COMMERCIAL | YES | 1mm | S-PBGA-B576 | 1.7V | Not Qualified | 1.9V | QDR, RAM, SRAM | 512KX18 | 18 | 9437184 bit | 0.45 ns |
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IS42S32400B-6B ISSI, Integrated Silicon Solution Inc
3.3V V 90 Pin Memory IC 13mm mm
Price: 0.0000
RFQ -
IS49NLC18160-33BL ISSI, Integrated Silicon Solution Inc
1.5/1.81.82.5V V 144 Pin Memory IC 18.5mm mm
Price: 0.0000
RFQ -
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7052L35GB Integrated Device Technology (IDT)
Through Hole Memory IC 16 kb kb 30.48mm mm 300mA mA 8b b
Price: 0.0000
RFQ -
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IDT71V424S10Y Integrated Device Technology (IDT)
3.3V V 36 Pin Memory IC 23.495mm mm
Price: 0.0000
RFQ -
7132LA100CB Integrated Device Technology (IDT)
Through Hole Memory IC 16 kb kb 61.72mm mm 140mA mA 8b b
Price: 0.0000
RFQ -
7024L55GB Integrated Device Technology (IDT)
5V V Through Hole 84 Pin Memory IC 64 kb kb 27.94mm mm 250mA mA 16b b
Price: 0.0000
RFQ -
IS41C16100C-50TI ISSI, Integrated Silicon Solution Inc
44 Pin Memory IC 20.95mm mm
Price: 0.0000
RFQ -
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IDT71016S12YGI Integrated Device Technology (IDT)
5V V 44 Pin Memory IC 28.575mm mm
Price: 0.0000
RFQ -
71V25761S200PFG8 Integrated Device Technology (IDT)
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M48Z58Y-70PC1 STMicroelectronics
5V V Through Hole 28 Pin Memory IC M48Z58 64 kb kb 39.625mm mm 50mA mA 8b b
Price: 15.8048
RFQ -
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IS61NLP25618EC-200TQLI-TR ISSI, Integrated Silicon Solution Inc
Memory IC 4 Mb kb 220mA mA 18b b
Price: 0.0000
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Surface Mount 84 Pin Memory IC 64 kb kb 29.21mm mm 195mA mA 16b b
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24LC1025-I/SM Microchip Technology
Surface Mount 8 Pin Memory IC 24LC1025 1 Mb kb 5.26mm mm 5mA mA
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RFQ -
MT49H32M9FM-33:B Micron Technology Inc.
1.5/1.81.82.5V V Surface Mount Memory IC 288 Mb kb 18.5mm mm
Price: 0.0000
RFQ -
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71V35761SA183BG8 Integrated Device Technology (IDT)
Surface Mount 119 Pin Memory IC 4.5 Mb kb 14mm mm 340mA mA 36b b
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RFQ -
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Surface Mount 100 Pin Memory IC 9 Mb kb 20mm mm 225mA mA 18b b
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RFQ -
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RFQ -
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7130LA20PF Integrated Device Technology (IDT)
Surface Mount Memory IC 8 kb kb 14mm mm 200mA mA 8b b
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