Items : %s%s
Memory
Contact Plating
- Tin
ECCN Code
- 3A991.B.1.A
- EAR99
Factory Lead Time
- 11 Weeks
- 4 Weeks
- 5 Weeks
- 6 Weeks
- 7 Weeks
- 8 Weeks
JESD-609 Code
- e3
- e4
Manufacturer Package Identifier
- 24AA256-I/P
Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- 1 (Unlimited)
- 3 (168 Hours)
Mount
- Surface Mount
- Through Hole
Mounting Type
- Surface Mount
- Through Hole
Number of Pins
- 28
- 3
- 32
- 5
- 8
Number of Terminations
- 28
- 3
- 32
- 5
- 8
Operating Temperature
- -40°C~85°C TA
- 0°C~70°C TA
Package / Case
- 28-DIP (0.600, 15.24mm)
- 32-DIP (0.600, 15.24mm)
- 32-LCC (J-Lead)
- 32-TFSOP (0.488, 12.40mm Width)
- 8-DIP (0.300, 7.62mm)
- 8-SOIC (0.154, 3.90mm Width)
- 8-SOIC (0.209, 5.30mm Width)
- 8-TSSOP, 8-MSOP (0.118, 3.00mm Width)
- SC-74A, SOT-753
- TO-226-3, TO-92-3 (TO-226AA)
Packaging
- Bulk
- Tape & Reel (TR)
- Tray
- Tube
Part Status
- Active
- Obsolete
Pbfree Code
- yes
Published
- 1995
- 1997
- 2000
- 2002
- 2003
- 2004
- 2005
- 2007
- 2008
- 2009
- 2013
Series
- MoBL®
- SST39 MPF™
Surface Mount
- NO
- YES
Terminal Finish
- Matte Tin (Sn)
- Matte Tin (Sn) - annealed
- Nickel/Palladium/Gold (Ni/Pd/Au)
Termination
- SMD/SMT
- Through Hole
Weight
- 453.59237mg
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Datasheet | Factory Lead Time | Mount | Packaging | Published | Series | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | ECCN Code | Max Operating Temperature | Min Operating Temperature | Operating Supply Voltage | Number of Ports | Length | RoHS Status | Lead Free | Contact Plating | Radiation Hardening | Number of Pins | Additional Feature | Package / Case | Interface | Max Supply Voltage | Reach Compliance Code | Min Supply Voltage | Density | Frequency | Width | Thickness | Mounting Type | Operating Temperature | Technology | Operating Mode | Height Seated (Max) | HTS Code | Number of Functions | Nominal Supply Current | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Supply Voltage | Time@Peak Reflow Temperature-Max (s) | Base Part Number | Pin Count | Temperature Grade | Surface Mount | Terminal Pitch | JESD-30 Code | Supply Voltage-Min (Vsup) | Subcategory | Qualification Status | Power Supplies | Supply Voltage-Max (Vsup) | Voltage | Supplier Device Package | Output Characteristics | Access Time | Frequency (Max) | Screening Level | Memory Size | Memory Type | Address Bus Width | Supply Current-Max | Voltage - Supply | Organization | Memory Width | Memory Density | Sync/Async | Data Bus Width | Parallel/Serial | Clock Frequency | Standby Current-Max | Access Time (Max) | Word Size | Alternate Memory Width | Data Retention Time-Min | Endurance | Write Protection | Write Cycle Time-Max (tWC) | I/O Type | Programming Voltage | Data Polling | Toggle Bit | Command User Interface | Number of Sectors/Size | Page Size | Ready/Busy | Common Flash Interface | Serial Bus Type | I2C Control Byte | Refresh Cycles | Standby Voltage-Min | Memory Format | Memory Interface | Write Cycle Time - Word, Page | Sector Size | Sequential Burst Length | Interleaved Burst Length | Boot Block |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
![]() |
7164L20YG8 | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Surface Mount | 2009 | yes | Active | 3 (168 Hours) | 28 | EAR99 | 70°C | 0°C | 5V | 1 | 17.9mm | RoHS Compliant | Lead Free | No | 28 | Parallel | 5.5V | 4.5V | 64 kb | 7.6mm | 2.67mm | CMOS | 3.556mm | 1 | 90mA | e3 | Matte Tin (Sn) - annealed | DUAL | J BEND | 260 | 5V | 28 | COMMERCIAL | SRAMs | 5V | 3-STATE | 20 ns | 8kB | RAM, SDR, SRAM - Asynchronous | 13b | 8KX8 | Asynchronous | 0.00006A | 8b | COMMON | 2V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() |
IDT71V25761S183PF | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 2009 | 3 (168 Hours) | 100 | 3A991.B.2.A | 70°C | 0°C | 20mm | Non-RoHS Compliant | PIPELINED ARCHITECTURE | LQFP | Parallel | not_compliant | 183MHz | 14mm | CMOS | SYNCHRONOUS | 1.6mm | 8542.32.00.41 | 1 | e0 | Tin/Lead (Sn85Pb15) | QUAD | GULL WING | 240 | 3.3V | 20 | 100 | COMMERCIAL | YES | 0.65mm | R-PQFP-G100 | 3.135V | SRAMs | Not Qualified | 2.53.3V | 3.465V | 3-STATE | RAM, SRAM | 0.34mA | 128KX36 | 36 | 4718592 bit | 0.03A | 3.3 ns | COMMON | 3.14V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() |
MTFC64GJTDN-4M IT | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Bulk | e•MMC™ | Obsolete | 3 (168 Hours) | ROHS3 Compliant | Surface Mount | -40°C~85°C TA | FLASH - NAND | 512Gb 64G x 8 | Non-Volatile | 2.7V~3.6V | FLASH | MMC | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() |
SST26VF064BT-104I/MF | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Tape & Reel (TR) | 2013 | SST26 SQI® | Active | 3 (168 Hours) | 8 | 3V | 6mm | ROHS3 Compliant | 8 | 8-WDFN Exposed Pad | SPI, Serial | 64 Mb | 5mm | Surface Mount | -40°C~85°C TA | CMOS | SYNCHRONOUS | 1 | e3 | Matte Tin (Sn) - annealed | DUAL | NOT SPECIFIED | 3V | NOT SPECIFIED | SST26VF064 | YES | 1.27mm | 2.7V | 3.6V | TS 16949 | 64Mb 8M x 8 | Non-Volatile | 2.7V~3.6V | 64MX1 | 1 | 104MHz | 3V | 256B | FLASH | SPI - Quad I/O | 1.5ms | BOTTOM/TOP | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() |
AT28HC256-12SU | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 14 Weeks | Surface Mount | Tube | 1997 | yes | Active | 2 (1 Year) | 28 | 5V | 17.9mm | ROHS3 Compliant | Lead Free | No | 28 | AUTOMATIC WRITE | 28-SOIC (0.295, 7.50mm Width) | 256 kb | 5MHz | 7.5mm | Surface Mount | -40°C~85°C TC | CMOS | 2.65mm | 1 | 80mA | e3 | Matte Tin (Sn) - annealed | DUAL | 250 | 5V | 40 | AT28HC256 | 1.27mm | 5V | 3-STATE | 120ns | MIL-STD-883 | 256Kb 32K x 8 | Non-Volatile | 4.5V~5.5V | 32KX8 | 8 | 0.0003A | 10000 Write/Erase Cycles | 10ms | 5V | YES | YES | NO | 64words | EEPROM | Parallel | 10ms | |||||||||||||||||||||||||||||||||||||||||||||||||||
![]() |
7006L25PFG8 | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Surface Mount | 2010 | yes | Active | 3 (168 Hours) | 64 | EAR99 | 70°C | 0°C | 5V | 2 | 14mm | RoHS Compliant | Lead Free | No | 64 | TQFP | Parallel | 5.5V | 4.5V | 128 kb | 14mm | 1.4mm | CMOS | 1.6mm | 1 | 220mA | e3 | Matte Tin (Sn) | QUAD | GULL WING | 260 | 5V | 64 | COMMERCIAL | 0.8mm | 25 ns | 16kB | RAM, SDR, SRAM | 28b | 16KX8 | Asynchronous | 8b | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() |
M29W128GL70N6E | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tray | 1998 | yes | Obsolete | 3 (168 Hours) | 56 | 3A991.B.1.A | 18.4mm | ROHS3 Compliant | No | 56 | 56-TFSOP (0.724, 18.40mm Width) | 128 Mb | 14mm | Surface Mount | -40°C~85°C TA | FLASH - NOR | 1.2mm | 8542.32.00.51 | 1 | 10mA | e3 | MATTE TIN | DUAL | 260 | 3V | 30 | M29W128 | 56 | YES | 0.5mm | 3/3.3V | 2.7V | 128Mb 16M x 8 8M x 16 | Non-Volatile | 2.7V~3.6V | 8KX16 | 16 | Asynchronous | 0.0001A | 70 ns | 8 | YES | YES | YES | 128 | 8/16words | YES | YES | FLASH | Parallel | 70ns | 128K | |||||||||||||||||||||||||||||||||||||||||||||||||||
![]() |
70V25L35J8 | Renesas Electronics America Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tape & Reel (TR) | Obsolete | 3 (168 Hours) | Non-RoHS Compliant | 84-LCC (J-Lead) | Surface Mount | 0°C~70°C TA | SRAM - Dual Port, Asynchronous | IDT70V25 | 128Kb 8K x 16 | Volatile | 3V~3.6V | SRAM | Parallel | 35ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() |
MT29F2G08ABAEAWP-E:E | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tube | Not For New Designs | 3 (168 Hours) | 3.3V | ROHS3 Compliant | 48-TFSOP (0.724, 18.40mm Width) | 2 Gb | Surface Mount | 0°C~70°C TA | FLASH - NAND | 2Gb 256M x 8 | Non-Volatile | 29b | 2.7V~3.6V | 2kB | FLASH | Parallel | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() |
S-25C040A0I-T8T1G | ABLIC U.S.A. Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tape & Reel (TR) | yes | Not For New Designs | 1 (Unlimited) | 8 | EAR99 | 4.4mm | RoHS Compliant | ALSO OERATES AT 1.6 V TO 2.5 V & 2.5 V TO 4.5 V | 8-TSSOP (0.173, 4.40mm Width) | 3mm | Surface Mount | -40°C~85°C TA | CMOS | SYNCHRONOUS | 1.1mm | 8542.32.00.51 | 1 | e6 | Tin/Bismuth (Sn/Bi) | DUAL | 260 | 5V | 10 | 8 | YES | 0.65mm | R-PDSO-G8 | 1.6V | Not Qualified | 5.5V | 4Kb 512 x 8 | Non-Volatile | 1.6V~5.5V | 512X8 | 8 | 4096 bit | SERIAL | 5MHz | 4ms | SPI | EEPROM | SPI | 4ms | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() |
70V3599S133BC | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Surface Mount | Bulk | 2009 | no | Active | 3 (168 Hours) | 256 | 70°C | 0°C | 3.3V | 2 | 17mm | RoHS Compliant | Contains Lead | No | 256 | Parallel | 3.45V | 3.15V | 4.5 Mb | 133MHz | 17mm | 1.4mm | CMOS | 1 | 400mA | e0 | Tin/Lead (Sn63Pb37) | BOTTOM | BALL | 3.3V | 256 | COMMERCIAL | 1mm | SRAMs | 3-STATE | 25 ns | 512kB | RAM, SDR, SRAM | 34b | Synchronous | 0.03A | 36b | COMMON | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() |
IDT71T75802S133PFI8 | Renesas Electronics America Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tape & Reel (TR) | Obsolete | 3 (168 Hours) | Non-RoHS Compliant | 100-LQFP | Surface Mount | -40°C~85°C TA | SRAM - Synchronous, SDR (ZBT) | IDT71T75 | 4.2ns | 18Mb 1M x 18 | Volatile | 2.375V~2.625V | 133MHz | SRAM | Parallel | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() |
RC28F256J3D95B TR | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tape & Reel (TR) | 2007 | StrataFlash™ | Obsolete | 3 (168 Hours) | Non-RoHS Compliant | 64-TBGA | Surface Mount | -40°C~85°C TA | FLASH - NOR | 28F256J3 | 64-EasyBGA (10x13) | 95ns | 256Mb 32M x 8 16M x 16 | Non-Volatile | 2.7V~3.6V | FLASH | Parallel | 95ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() |
7140LA25PFI | Renesas Electronics America Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tray | Obsolete | 3 (168 Hours) | Non-RoHS Compliant | 64-LQFP | Surface Mount | -40°C~85°C TA | SRAM - Dual Port, Asynchronous | IDT7140 | 64-TQFP (14x14) | 25ns | 8Kb 1K x 8 | Volatile | 4.5V~5.5V | SRAM | Parallel | 25ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() |
AT24C64BN-10SU-1.8 | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tube | Obsolete | 1 (Unlimited) | 8 | EAR99 | 4.9mm | ROHS3 Compliant | 8-SOIC (0.154, 3.90mm Width) | 3.9mm | Surface Mount | -40°C~85°C TA | CMOS | SYNCHRONOUS | 1.75mm | 8542.32.00.51 | 1 | e3 | Matte Tin (Sn) | DUAL | 260 | 2.7V | 40 | AT24C64 | YES | 1.27mm | R-PDSO-G8 | 1.8V | Not Qualified | 2/5V | 5.5V | 900ns | 64Kb 8K x 8 | Non-Volatile | 0.003mA | 1.8V~5.5V | 8KX8 | 8 | 65536 bit | SERIAL | 400kHz | 0.000001A | 100 | 1000000 Write/Erase Cycles | HARDWARE | 5ms | I2C | 1010DDDR | EEPROM | I2C | 5ms | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() |
70V639S12BCI | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Surface Mount | 2009 | no | Active | 3 (168 Hours) | 256 | 85°C | -40°C | 3.3V | 2 | 17mm | RoHS Compliant | Contains Lead | No | 256 | Parallel | 3.45V | 3.15V | 2.3 Mb | 17mm | 1.4mm | CMOS | 1.5mm | 1 | 515mA | e0 | Tin/Lead (Sn63Pb37) | BOTTOM | BALL | 225 | 3.3V | 256 | INDUSTRIAL | 1mm | SRAMs | 3-STATE | 12 ns | 256kB | RAM, SDR, SRAM | 17b | Asynchronous | 0.015A | 18b | COMMON | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() |
71T75602S100BGI | Renesas Electronics America Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 14 Weeks | Tray | Active | 3 (168 Hours) | Non-RoHS Compliant | 119-BGA | Surface Mount | -40°C~85°C TA | SRAM - Synchronous, SDR (ZBT) | IDT71T75 | 119-PBGA (14x22) | 5ns | 18Mb 512K x 36 | Volatile | 2.375V~2.625V | 100MHz | SRAM | Parallel | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() |
24LC025-I/P | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Through Hole | Tube | 2002 | yes | Active | Not Applicable | 8 | EAR99 | 9.27mm | ROHS3 Compliant | Lead Free | Tin | No | 8 | 1000K ERASE/WRITE CYCLES; DATA RETENTION > 200 YEARS | 8-DIP (0.300, 7.62mm) | I2C, Serial | 2 kb | 7.62mm | Through Hole | -40°C~85°C TA | CMOS | 5.334mm | 1 | 3mA | e3 | DUAL | 4.5V | 24LC025 | 8 | 2.54mm | 2.5V | 3/5V | 5.5V | 900ns | 2Kb 256 x 8 | Non-Volatile | 2.5V~5.5V | 8 | 400kHz | 0.000001A | 200 | 1000000 Write/Erase Cycles | 5ms | I2C | 1010DDDR | EEPROM | I2C | 5ms | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() |
IDT71T75802S150PF | Renesas Electronics America Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tray | Obsolete | 3 (168 Hours) | Non-RoHS Compliant | 100-LQFP | Surface Mount | 0°C~70°C TA | SRAM - Synchronous, SDR (ZBT) | IDT71T75 | 3.8ns | 18Mb 1M x 18 | Volatile | 2.375V~2.625V | 150MHz | SRAM | Parallel | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IS46R16320D-5TLA1-TR | ISSI, Integrated Silicon Solution Inc | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 10 Weeks | Tape & Reel (TR) | Active | 3 (168 Hours) | 66 | ROHS3 Compliant | 66 | 66-TSSOP (0.400, 10.16mm Width) | Surface Mount | -40°C~85°C TA | SDRAM - DDR | DUAL | 2.6V | YES | 0.635mm | Not Qualified | 2.6V | 3-STATE | 700ps | AEC-Q100 | 512Mb 32M x 16 | Volatile | 0.43mA | 2.5V~2.7V | 32MX16 | 16 | 536870912 bit | 16b | 200MHz | 0.03A | COMMON | 8192 | DRAM | Parallel | 15ns | 248 | 248 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() |
70T3599S200BCG | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Surface Mount | 2009 | Active | 70°C | 0°C | 2.5V | 2 | 17mm | RoHS Compliant | Lead Free | No | 256 | Parallel | 2.6V | 2.4V | 4.5 Mb | 200MHz | 17mm | 1.4mm | 525mA | 3.4 ns | 200MHz | 512kB | RAM, SDR, SRAM | 34b | Synchronous | 36b | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IS42S83200G-6TL-TR | ISSI, Integrated Silicon Solution Inc | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 8 Weeks | Tape & Reel (TR) | Active | 3 (168 Hours) | 54 | ROHS3 Compliant | 54 | 54-TSOP (0.400, 10.16mm Width) | Surface Mount | 0°C~70°C TA | SDRAM | DUAL | 3.3V | YES | 0.8mm | Not Qualified | 3.3V | 3-STATE | 5.4ns | 256Mb 32M x 8 | Volatile | 0.16mA | 3V~3.6V | 32MX8 | 8 | 8b | 166MHz | 0.004A | COMMON | 8192 | DRAM | Parallel | 1248FP | 1248 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CY7C1021BN-12VXIT | Cypress Semiconductor Corp | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tape & Reel (TR) | 2006 | Obsolete | 3 (168 Hours) | 44 | 3A991.B.2.B | 28.575mm | ROHS3 Compliant | Lead Free | 44 | 44-BSOJ (0.400, 10.16mm Width) | unknown | 12GHz | 10.16mm | Surface Mount | -40°C~85°C TA | SRAM - Asynchronous | 3.7592mm | 8542.32.00.41 | 1 | e4 | NICKEL PALLADIUM GOLD | DUAL | 5V | CY7C1021 | 44 | YES | 1.27mm | 4.5V | Not Qualified | 5.5V | 1Mb 64K x 16 | Volatile | 4.5V~5.5V | 64KX16 | 16 | 1048576 bit | 12 ns | SRAM | Parallel | 12ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() |
IDT71V2556S100BG | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 2007 | 3 (168 Hours) | 119 | 3A991.B.2.A | 70°C | 0°C | 22mm | RoHS Compliant | PIPELINED ARCHITECTURE | BGA | Parallel | 100MHz | 14mm | CMOS | SYNCHRONOUS | 2.36mm | 8542.32.00.41 | 1 | e0 | Tin/Lead (Sn63Pb37) | BOTTOM | BALL | NOT SPECIFIED | 3.3V | NOT SPECIFIED | 119 | COMMERCIAL | YES | 1.27mm | 3.135V | SRAMs | Not Qualified | 2.53.3V | 3.465V | 3-STATE | RAM, SRAM | 0.25mA | 128KX36 | 36 | 4718592 bit | 0.04A | 5 ns | COMMON | 3.14V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IDT71P71804S167BQG | Renesas Electronics America Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tray | Obsolete | 3 (168 Hours) | 165-TBGA | Surface Mount | 0°C~70°C TA | SRAM - Synchronous, DDR II | IDT71P71 | 165-CABGA (13x15) | 8.4ns | 18Mb 1M x 18 | Volatile | 1.7V~1.9V | 167MHz | SRAM | Parallel | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CY7C2265KV18-450BZC | Cypress Semiconductor Corp | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 13 Weeks | Surface Mount | Tray | 2003 | Active | 3 (168 Hours) | 165 | 1.8V | 2 | 15mm | Non-RoHS Compliant | No | 165 | PIPELINED ARCHITECTURE | 165-LBGA | 36 Mb | Surface Mount | 0°C~70°C TA | SRAM - Synchronous, QDR II+ | 1.4mm | 1 | 1.02A | e0 | Tin/Lead (Sn/Pb) | BOTTOM | 235 | 1.8V | 20 | CY7C2265 | 165 | 1mm | 1.7V | 1.9V | 3-STATE | 450 ps | 36Mb 1M x 36 | Volatile | 18b | 1.7V~1.9V | 1MX36 | 36 | Synchronous | 450MHz | 0.33A | 36b | SEPARATE | 1.7V | SRAM | Parallel | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CY62147GN30-45ZSXIT | Cypress Semiconductor Corp | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 13 Weeks | Tape & Reel (TR) | MoBL® | Active | 3 (168 Hours) | 44 | 18.415mm | ROHS3 Compliant | 44-TSOP (0.400, 10.16mm Width) | 10.16mm | Surface Mount | -40°C~85°C TA | SRAM - Asynchronous | 1.194mm | 1 | DUAL | 3V | YES | 0.8mm | R-PDSO-G44 | 2.2V | 3.6V | 4Mb 256K x 16 | Volatile | 2.2V~3.6V | 256KX16 | 16 | 4194304 bit | 45 ns | SRAM | Parallel | 45ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() |
MT28F004B5VG-8 BET | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tray | 2002 | Obsolete | 1 (Unlimited) | 40 | EAR99 | 18.4mm | Non-RoHS Compliant | BOTTOM BOOT BLOCK | 40-TFSOP (0.724, 18.40mm Width) | not_compliant | 10mm | Surface Mount | -40°C~85°C TA | FLASH - NOR | ASYNCHRONOUS | 1.2mm | 8542.32.00.51 | 1 | e0 | Tin/Lead (Sn/Pb) | DUAL | 235 | 5V | 30 | MT28F004B5 | 40 | YES | 0.5mm | R-PDSO-G40 | 4.5V | Not Qualified | 5V | 5.5V | 4Mb 512K x 8 | Non-Volatile | 0.055mA | 4.5V~5.5V | 512KX8 | 8 | 4194304 bit | 0.000005A | 80 ns | 5V | NO | NO | YES | 1213 | FLASH | Parallel | 80ns | 16K8K96K128K | BOTTOM | |||||||||||||||||||||||||||||||||||||||||||||||||||
| CY7C1021CV33-10ZXC | Cypress Semiconductor Corp | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Surface Mount | Tray | 1996 | Obsolete | 3 (168 Hours) | 44 | 3.3V | 1 | ROHS3 Compliant | Lead Free | No | 44 | 44-TSOP (0.400, 10.16mm Width) | 1 Mb | 10GHz | Surface Mount | 0°C~70°C TA | SRAM - Asynchronous | 1 | 90mA | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | DUAL | 260 | 3.3V | 20 | CY7C1021 | 44 | 0.8mm | 2.97V | 3.63V | 3-STATE | 1Mb 64K x 16 | Volatile | 16b | 3V~3.6V | 16 | Asynchronous | 0.005A | 16b | COMMON | 3V | SRAM | Parallel | 10ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CY7C1049G30-10ZSXIT | Cypress Semiconductor Corp | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 13 Weeks | Tape & Reel (TR) | Active | 3 (168 Hours) | 44 | 18.415mm | ROHS3 Compliant | Lead Free | 44-TSOP (0.400, 10.16mm Width) | 10.16mm | Surface Mount | -40°C~85°C TA | SRAM - Asynchronous | 1.194mm | 1 | DUAL | 3V | YES | 0.8mm | R-PDSO-G44 | 2.2V | 3.6V | 4Mb 512K x 8 | Volatile | 2.2V~3.6V | 512KX8 | 8 | 4194304 bit | 10 ns | SRAM | Parallel | 10ns |
-
7164L20YG8 Integrated Device Technology (IDT)
5V V Surface Mount 28 Pin Memory IC 64 kb kb 17.9mm mm 90mA mA 8b b
Price: 0.0000
RFQ -
IDT71V25761S183PF Integrated Device Technology (IDT)
2.53.3V V 100 Pin Memory IC 20mm mm
Price: 0.0000
RFQ -
-
SST26VF064BT-104I/MF Microchip Technology
SST26 SQI® Memory IC SST26 SQI® Series SST26VF064 64 Mb kb 6mm mm
Price: 0.0000
RFQ -
AT28HC256-12SU Microchip Technology
5V V Surface Mount Memory IC AT28HC256 256 kb kb 17.9mm mm 80mA mA
Price: 0.0000
RFQ -
7006L25PFG8 Integrated Device Technology (IDT)
Surface Mount 64 Pin Memory IC 128 kb kb 14mm mm 220mA mA 8b b
Price: 0.0000
RFQ -
M29W128GL70N6E Micron Technology Inc.
3/3.3V V 56 Pin Memory IC M29W128 128 Mb kb 18.4mm mm 10mA mA
Price: 0.0000
RFQ -
-
-
-
70V3599S133BC Integrated Device Technology (IDT)
Surface Mount 256 Pin Memory IC 4.5 Mb kb 17mm mm 400mA mA 36b b
Price: 0.0000
RFQ -
-
RC28F256J3D95B TR Micron Technology Inc.
StrataFlash™ Memory IC StrataFlash™ Series 28F256J3
Price: 0.0000
RFQ -
-
-
70V639S12BCI Integrated Device Technology (IDT)
Surface Mount 256 Pin Memory IC 2.3 Mb kb 17mm mm 515mA mA 18b b
Price: 0.0000
RFQ -
-
24LC025-I/P Microchip Technology
3/5V V Through Hole 8 Pin Memory IC 24LC025 2 kb kb 9.27mm mm 3mA mA
Price: 0.0000
RFQ -
-
-
70T3599S200BCG Integrated Device Technology (IDT)
Surface Mount Memory IC 4.5 Mb kb 17mm mm 525mA mA 36b b
Price: 0.0000
RFQ -
-
CY7C1021BN-12VXIT Cypress Semiconductor Corp
44 Pin Memory IC CY7C1021 28.575mm mm
Price: 0.0000
RFQ -
IDT71V2556S100BG Integrated Device Technology (IDT)
2.53.3V V 119 Pin Memory IC 22mm mm
Price: 0.0000
RFQ -
-
CY7C2265KV18-450BZC Cypress Semiconductor Corp
Surface Mount 165 Pin Memory IC CY7C2265 36 Mb kb 15mm mm 1.02A mA 36b b
Price: 0.0000
RFQ -
CY62147GN30-45ZSXIT Cypress Semiconductor Corp
MoBL® Memory IC MoBL® Series 18.415mm mm
Price: 0.0000
RFQ -
MT28F004B5VG-8 BET Micron Technology Inc.
5V V 40 Pin Memory IC MT28F004B5 18.4mm mm
Price: 0.0000
RFQ -
CY7C1021CV33-10ZXC Cypress Semiconductor Corp
Surface Mount 44 Pin Memory IC CY7C1021 1 Mb kb 90mA mA 16b b
Price: 0.0000
RFQ -




.png)

















Need Help?

