Items : %s%s
Memory
Contact Plating
- Tin
ECCN Code
- 3A991.B.1.A
- EAR99
Factory Lead Time
- 11 Weeks
- 4 Weeks
- 5 Weeks
- 6 Weeks
- 7 Weeks
- 8 Weeks
JESD-609 Code
- e3
- e4
Manufacturer Package Identifier
- 24AA256-I/P
Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- 1 (Unlimited)
- 3 (168 Hours)
Mount
- Surface Mount
- Through Hole
Mounting Type
- Surface Mount
- Through Hole
Number of Pins
- 28
- 3
- 32
- 5
- 8
Number of Terminations
- 28
- 3
- 32
- 5
- 8
Operating Temperature
- -40°C~85°C TA
- 0°C~70°C TA
Package / Case
- 28-DIP (0.600, 15.24mm)
- 32-DIP (0.600, 15.24mm)
- 32-LCC (J-Lead)
- 32-TFSOP (0.488, 12.40mm Width)
- 8-DIP (0.300, 7.62mm)
- 8-SOIC (0.154, 3.90mm Width)
- 8-SOIC (0.209, 5.30mm Width)
- 8-TSSOP, 8-MSOP (0.118, 3.00mm Width)
- SC-74A, SOT-753
- TO-226-3, TO-92-3 (TO-226AA)
Packaging
- Bulk
- Tape & Reel (TR)
- Tray
- Tube
Part Status
- Active
- Obsolete
Pbfree Code
- yes
Published
- 1995
- 1997
- 2000
- 2002
- 2003
- 2004
- 2005
- 2007
- 2008
- 2009
- 2013
Series
- MoBL®
- SST39 MPF™
Surface Mount
- NO
- YES
Terminal Finish
- Matte Tin (Sn)
- Matte Tin (Sn) - annealed
- Nickel/Palladium/Gold (Ni/Pd/Au)
Termination
- SMD/SMT
- Through Hole
Weight
- 453.59237mg
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Datasheet | Factory Lead Time | Mount | Packaging | Published | Series | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | ECCN Code | Max Operating Temperature | Min Operating Temperature | Operating Supply Voltage | Number of Ports | Length | RoHS Status | Lead Free | Radiation Hardening | Number of Pins | Additional Feature | Package / Case | Interface | Max Supply Voltage | Reach Compliance Code | Min Supply Voltage | Density | Frequency | Width | Thickness | Mounting Type | Operating Temperature | Technology | Operating Mode | Height Seated (Max) | HTS Code | Number of Functions | Nominal Supply Current | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Supply Voltage | Time@Peak Reflow Temperature-Max (s) | Base Part Number | Pin Count | Temperature Grade | Surface Mount | Terminal Pitch | JESD-30 Code | Supply Voltage-Min (Vsup) | Subcategory | Qualification Status | Power Supplies | Supply Voltage-Max (Vsup) | Supplier Device Package | Output Characteristics | Access Time | Screening Level | Memory Size | Memory Type | Address Bus Width | Supply Current-Max | Voltage - Supply | Organization | Memory Width | Memory Density | Sync/Async | Data Bus Width | Parallel/Serial | Clock Frequency | Standby Current-Max | Access Time (Max) | Word Size | Alternate Memory Width | Data Retention Time-Min | Endurance | Write Protection | Write Cycle Time-Max (tWC) | I/O Type | Programming Voltage | Page Size | Serial Bus Type | Refresh Cycles | Standby Voltage-Min | Memory Format | Memory Interface | Write Cycle Time - Word, Page | Sequential Burst Length | Interleaved Burst Length |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
S25FS512SDSBHA210 | Cypress Semiconductor Corp | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 13 Weeks | Tray | Automotive, AEC-Q100, FS-S | Active | 3 (168 Hours) | 24 | 8mm | ROHS3 Compliant | IT IS ALSO CONFIGURED AS 512M X 1 | 24-TBGA | 6mm | Surface Mount | -40°C~85°C TA | FLASH - NOR | SYNCHRONOUS | 1.2mm | 8542.32.00.51 | 1 | BOTTOM | NOT SPECIFIED | 1.8V | NOT SPECIFIED | YES | 1mm | R-PBGA-B24 | 1.7V | 2V | AEC-Q100; TS 16949 | 512Mb 64M x 8 | Non-Volatile | 1.7V~2V | 128MX4 | 4 | 536870912 bit | SERIAL | 80MHz | 2 | 1.8V | FLASH | SPI - Quad I/O, QPI | ||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
AT24C512-10PU-1.8 | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tube | Obsolete | 1 (Unlimited) | ROHS3 Compliant | 8-DIP (0.300, 7.62mm) | Through Hole | -40°C~85°C TA | EEPROM | AT24C512 | 8-PDIP | 900ns | 512Kb 64K x 8 | Non-Volatile | 1.8V~3.6V | 400kHz | EEPROM | I2C | 10ms | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
71V2556S150PFG | Renesas Electronics America Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 13 Weeks | Tray | Active | 3 (168 Hours) | ROHS3 Compliant | 100-LQFP | Surface Mount | 0°C~70°C TA | SRAM - Synchronous, SDR (ZBT) | IDT71V2556 | 100-TQFP (14x14) | 3.8ns | 4.5Mb 128K x 36 | Volatile | 3.135V~3.465V | 150MHz | SRAM | Parallel | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
70V7599S133BF | Renesas Electronics America Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 12 Weeks | Tray | Active | 4 (72 Hours) | Non-RoHS Compliant | 208-LFBGA | Surface Mount | 0°C~70°C TA | SRAM - Dual Port, Synchronous | IDT70V7599 | 208-CABGA (15x15) | 4.2ns | 4.5Mb 128K x 36 | Volatile | 3.15V~3.45V | 133MHz | SRAM | Parallel | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
.png "MT29F256G08AUCABJ3-10Z:A TR") |
MT29F256G08AUCABJ3-10Z:A TR | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 6 Weeks | Tape & Reel (TR) | Obsolete | 3 (168 Hours) | ROHS3 Compliant | 0°C~70°C TA | FLASH - NAND | 256Gb 32G x 8 | Non-Volatile | 2.7V~3.6V | 100MHz | FLASH | Parallel | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IS43R16800E-6TL | ISSI, Integrated Silicon Solution Inc | 2.3700 |
Min: 1 Mult: 1 |
0.00000000 | 8 Weeks | Surface Mount | Tray | Active | 3 (168 Hours) | 66 | 2.5V | 1 | 22.22mm | ROHS3 Compliant | Lead Free | No | 66 | AUTO/SELF REFRESH | 66-TSSOP (0.400, 10.16mm Width) | 128 Mb | Surface Mount | 0°C~70°C TA | SDRAM - DDR | 1.2mm | 1 | 220mA | e3 | Tin (Sn) | DUAL | 2.5V | 0.65mm | 2.3V | 2.7V | 3-STATE | 700ps | 128Mb 8M x 16 | Volatile | 14b | 2.3V~2.7V | 8MX16 | 16 | 16b | 166MHz | 0.003A | COMMON | 4096 | DRAM | Parallel | 12ns | 248 | 248 | ||||||||||||||||||||||||||||||||||||||||||||||
 |
AS7C1026C-15JIN | Alliance Memory, Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 8 Weeks | Tube | 2006 | yes | Active | 3 (168 Hours) | 44 | 5V | 1 | 28.575mm | ROHS3 Compliant | Lead Free | No | 44 | 44-BSOJ (0.400, 10.16mm Width) | 1 Mb | Surface Mount | -40°C~85°C TA | SRAM - Asynchronous | 3.7592mm | 1 | DUAL | 5V | 44 | YES | 1Mb 64K x 16 | Volatile | 16b | 4.5V~5.5V | 16 | SRAM | Parallel | 15ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
CY7C1568KV18-400BZC | Cypress Semiconductor Corp | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 13 Weeks | Surface Mount | Tray | 2003 | Active | 3 (168 Hours) | 165 | 1.8V | 1 | Non-RoHS Compliant | No | 165 | PIPELINED ARCHITECTURE | 165-LBGA | 72 Mb | Surface Mount | 0°C~70°C TA | SRAM - Synchronous, DDR II+ | 1 | 590mA | e0 | Tin/Lead (Sn/Pb) | BOTTOM | 235 | 1.8V | 20 | CY7C1568 | 165 | 3-STATE | 450 ps | 72Mb 4M x 18 | Volatile | 21b | 1.7V~1.9V | 18 | Synchronous | 400MHz | 0.32A | 18b | COMMON | SRAM | Parallel | ||||||||||||||||||||||||||||||||||||||||||||||||||
 |
CY7C1041G30-10VXIT | Cypress Semiconductor Corp | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 10 Weeks | Tape & Reel (TR) | Active | 3 (168 Hours) | 44 | 28.575mm | ROHS3 Compliant | 44 | 44-BSOJ (0.400, 10.16mm Width) | 10.16mm | Surface Mount | -40°C~85°C TA | SRAM - Asynchronous | 3.7592mm | 1 | DUAL | 3V | YES | 1.27mm | 2.2V | 3.6V | 4Mb 256K x 16 | Volatile | 2.2V~3.6V | 256KX16 | 16 | 4194304 bit | 10 ns | SRAM | Parallel | 10ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
M93C46-WMN6T | STMicroelectronics | 0.0917 |
Min: 1 Mult: 1 |
0.00000000 | download | Tape & Reel (TR) | Obsolete | 1 (Unlimited) | 8 | EAR99 | 4.9mm | Non-RoHS Compliant | Contains Lead | No | 8 | 8-SOIC (0.154, 3.90mm Width) | Serial | 1 kb | 3.9mm | Surface Mount | -40°C~85°C TA | CMOS | 1.75mm | 1 | e0 | TIN LEAD | DUAL | 5V | M93C46 | 8 | YES | 1.27mm | 2.5V | 3/5V | 5.5V | 3-STATE | 4 μs | 1Kb 128 x 8 64 x 16 | Non-Volatile | 0.002mA | 2.5V~5.5V | 64X16 | 16 | 2MHz | 0.000005A | 8 | 40 | 1000000 Write/Erase Cycles | SOFTWARE | 5ms | MICROWIRE | EEPROM | SPI | 5ms | |||||||||||||||||||||||||||||||||||||||||||
 |
IS61WV5128BLL-10BLI-TR | ISSI, Integrated Silicon Solution Inc | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 8 Weeks | Tape & Reel (TR) | Active | 3 (168 Hours) | 85°C | -40°C | 1 | ROHS3 Compliant | No | 36 | 36-TFBGA | Parallel | 3.6V | 2.4V | 4 Mb | Surface Mount | -40°C~85°C TA | SRAM - Asynchronous | 40mA | 36-TFBGA (6x8) | 10ns | 4Mb 512K x 8 | Volatile | 19b | 2.4V~3.6V | Asynchronous | 8b | SRAM | Parallel | 10ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
71342LA20PF8 | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Surface Mount | 2009 | no | Active | 3 (168 Hours) | 64 | EAR99 | 70°C | 0°C | 5V | 2 | 14mm | RoHS Compliant | Contains Lead | No | 64 | SEMAPHORE; AUTOMATIC POWER-DOWN; BATTERY BACKUP | TQFP | Parallel | 5.5V | 4.5V | 32 kb | 14mm | 1.4mm | CMOS | 1.6mm | 1 | 240mA | e0 | Tin/Lead (Sn85Pb15) | QUAD | GULL WING | 240 | 5V | 20 | 64 | COMMERCIAL | 0.8mm | SRAMs | 5V | 3-STATE | 20 ns | 4kB | RAM, SDR, SRAM | 24b | 4KX8 | Asynchronous | 0.0015A | 8b | COMMON | 2V | ||||||||||||||||||||||||||||||||||||||||
 |
70V28L20PF8 | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | 2008 | Active | 70°C | 0°C | 3.3V | 2 | 14mm | RoHS Compliant | Contains Lead | No | 100 | TQFP | Parallel | 3.6V | 3V | 1 Mb | 14mm | 1.4mm | 20 ns | 128kB | RAM, SDR, SRAM | 32b | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
CY7C2268KV18-550BZC | Cypress Semiconductor Corp | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 13 Weeks | Surface Mount | Tray | 2003 | Active | 3 (168 Hours) | 165 | 1.8V | 1 | Non-RoHS Compliant | No | 165 | PIPELINED ARCHITECTURE | 165-LBGA | 36 Mb | Surface Mount | 0°C~70°C TA | SRAM - Synchronous, DDR II+ | 1 | 700mA | e0 | Tin/Lead (Sn/Pb) | BOTTOM | 235 | 1.8V | 20 | CY7C2268 | 165 | 3-STATE | 450 ps | 36Mb 2M x 18 | Volatile | 20b | 1.7V~1.9V | 18 | Synchronous | 550MHz | 0.36A | 18b | COMMON | SRAM | Parallel | ||||||||||||||||||||||||||||||||||||||||||||||||||
|
7024S35FB | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 10 Weeks | 2013 | no | Active | 1 (Unlimited) | 84 | 125°C | -55°C | 5V | 2 | 29.2mm | RoHS Compliant | Contains Lead | No | 84 | INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN | Parallel | 64 kb | 29.21mm | 2.54mm | CMOS | 3.556mm | 1 | e0 | Tin/Lead (Sn/Pb) | QUAD | FLAT | 240 | 5V | 84 | MILITARY | YES | SRAMs | 5V | 3-STATE | 38535Q/M;38534H;883B | RAM, SRAM | 24b | 0.3mA | 4KX16 | 0.03A | 35 ns | COMMON | |||||||||||||||||||||||||||||||||||||||||||||||||
 |
70T3339S200BC8 | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Surface Mount | Tape & Reel | 2010 | no | Active | 3 (168 Hours) | 256 | 70°C | 0°C | 2.5V | 2 | 17mm | RoHS Compliant | Contains Lead | 256 | FLOW-THROUGH OR PIPELINED ARCHITECTURE | Parallel | 2.6V | 2.4V | 9 Mb | 200MHz | 17mm | 1.4mm | CMOS | 1.5mm | 1 | 525mA | e0 | Tin/Lead (Sn63Pb37) | BOTTOM | BALL | 225 | 2.5V | 20 | 256 | COMMERCIAL | 1mm | SRAMs | Not Qualified | 3-STATE | 10 ns | RAM, SRAM | 19b | Synchronous | 0.015A | 18b | COMMON | ||||||||||||||||||||||||||||||||||||||||||||
 |
71V3559S75BQI | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 2009 | no | Discontinued | 3 (168 Hours) | 165 | 85°C | -40°C | 3.3V | 1 | 15mm | RoHS Compliant | Contains Lead | No | 165 | Parallel | 4.5 Mb | 13mm | 1.2mm | CMOS | 1 | e0 | TIN LEAD | BOTTOM | BALL | 225 | 3.3V | 20 | 165 | INDUSTRIAL | YES | 3.465V | RAM, SRAM | 18b | 7.5 ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
7005S35JI | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Surface Mount | 2005 | Active | 85°C | -40°C | 5V | 2 | 24mm | RoHS Compliant | Contains Lead | No | 68 | PLCC | Parallel | 5.5V | 4.5V | 64 kb | 24mm | 3.63mm | 300mA | 35 ns | 8kB | RAM, SDR, SRAM | 26b | Asynchronous | 8b | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
70V25L15J | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Surface Mount | 2008 | no | Active | 1 (Unlimited) | 84 | EAR99 | 70°C | 0°C | 3.3V | 2 | 29.21mm | RoHS Compliant | Contains Lead | No | 84 | PLCC | Parallel | 3.6V | 3V | 128 kb | 29.21mm | 3.63mm | CMOS | 1 | 185mA | e0 | Tin/Lead (Sn85Pb15) | QUAD | J BEND | 225 | 3.3V | 84 | COMMERCIAL | SRAMs | 3-STATE | 15 ns | 16kB | RAM, SDR, SRAM | 26b | 8KX16 | Asynchronous | 16b | COMMON | 3V | ||||||||||||||||||||||||||||||||||||||||||||||
 |
70V3589S133DRG8 | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tape & Reel | 2010 | yes | 3 (168 Hours) | 208 | 70°C | 0°C | 3.3V | 2 | 28mm | RoHS Compliant | Lead Free | No | 208 | PIPELINED OR FLOW-THROUGH ARCHITECTURE | PQFP | Parallel | 3.45V | 3.15V | 2.3 Mb | 133MHz | 28mm | 3.5mm | CMOS | 1 | e3 | Matte Tin (Sn) | QUAD | GULL WING | 260 | 3.3V | 30 | 208 | COMMERCIAL | YES | 0.5mm | SRAMs | 3-STATE | 25 ns | 256kB | RAM, SDR, SRAM | 16b | 0.4mA | 64KX36 | 0.03A | COMMON | ||||||||||||||||||||||||||||||||||||||||||||||
|
7142SA100CB | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Through Hole | Bulk | 2007 | Active | 125°C | -55°C | 5V | 2 | 61.72mm | RoHS Compliant | Contains Lead | No | 48 | DIP | Parallel | 5.5V | 4.5V | 16 kb | 15.24mm | 3.3mm | 190mA | 100 ns | RAM, SRAM | 22b | Asynchronous | 8b | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
6116LA150DB | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 10 Weeks | 2013 | no | Active | 1 (Unlimited) | 24 | 125°C | -55°C | 5V | 1 | 32mm | RoHS Compliant | Contains Lead | No | 24 | CDIP | Parallel | 5.5V | 4.5V | 16 kb | 15.24mm | 2.9mm | CMOS | 4.826mm | 1 | e0 | Tin/Lead (Sn/Pb) | DUAL | THROUGH-HOLE | 240 | 5V | 24 | MILITARY | NO | 2.54mm | SRAMs | 5V | 3-STATE | 150 ns | MIL-STD-883 Class B | 2kB | RAM, SDR, SRAM - Asynchronous | 11b | 0.085mA | 2KX8 | 0.0003A | COMMON | 2V | ||||||||||||||||||||||||||||||||||||||||||||
 |
71256SA12TPG | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Through Hole | Bulk | 2011 | yes | Active | 1 (Unlimited) | 28 | EAR99 | 70°C | 0°C | 5V | 1 | 34.3mm | RoHS Compliant | Lead Free | No | 28 | PDIP | Parallel | 5.5V | 4.5V | 256 kb | 7.62mm | 3.3mm | CMOS | 4.572mm | 1 | 160mA | e3 | Matte Tin (Sn) - annealed | DUAL | 260 | 5V | 28 | COMMERCIAL | 2.54mm | SRAMs | 5V | 3-STATE | 12 ns | 32kB | RAM, SDR, SRAM - Asynchronous | 15b | 32KX8 | Asynchronous | 8b | COMMON | ||||||||||||||||||||||||||||||||||||||||||||
|
7134LA70CB | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 10 Weeks | Through Hole | Bulk | 2005 | no | Active | 1 (Unlimited) | 48 | 125°C | -55°C | 5V | 2 | 61.72mm | RoHS Compliant | Contains Lead | No | 48 | AUTOMATIC POWER-DOWN; BATTERY BACKUP | DIP | Parallel | 5.5V | 4.5V | 32 kb | 15.24mm | 3.3mm | CMOS | 1 | 220mA | e0 | Tin/Lead (Sn/Pb) | DUAL | 240 | 5V | 48 | MILITARY | SRAMs | 5V | 3-STATE | 70 ns | 38535Q/M;38534H;883B | 4kB | RAM, SDR, SRAM | 24b | 4KX8 | Asynchronous | 0.004A | 8b | COMMON | 2V | |||||||||||||||||||||||||||||||||||||||||||
 |
IDT71V3577SA75BGG | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 2005 | 119 | 3A991.B.2.A | 70°C | 0°C | 22mm | RoHS Compliant | FLOW-THROUGH ARCHITECTURE | BGA | Parallel | unknown | 14mm | CMOS | SYNCHRONOUS | 2.36mm | 8542.32.00.41 | 1 | e1 | TIN SILVER COPPER | BOTTOM | BALL | 3.3V | 119 | COMMERCIAL | YES | 1.27mm | 3.135V | Not Qualified | 3.465V | RAM, SRAM | 128KX36 | 36 | 4718592 bit | 7.5 ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IDT71016S15YI | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 2010 | no | 3 (168 Hours) | 44 | 3A991.B.2.B | 85°C | -40°C | 28.575mm | RoHS Compliant | 44 | Parallel | 10.16mm | CMOS | 3.683mm | 8542.32.00.41 | 1 | e0 | Tin/Lead (Sn85Pb15) | DUAL | J BEND | 225 | 5V | 30 | 44 | INDUSTRIAL | YES | 1.27mm | 4.5V | SRAMs | Not Qualified | 5V | 5.5V | 3-STATE | RAM, SRAM - Asynchronous | 0.18mA | 64KX16 | 16 | 1048576 bit | 0.01A | 15 ns | COMMON | 4.5V | ||||||||||||||||||||||||||||||||||||||||||||||||||
|
MT53D768M64D4SQ-053 WT:A | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Box | Obsolete | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IS41LV16105D-50KLI-TR | ISSI, Integrated Silicon Solution Inc | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tape & Reel (TR) | Active | 3 (168 Hours) | 44 | 1 | 20.95mm | ROHS3 Compliant | AUTO/SELF REFRESH | 42-BSOJ (0.400, 10.16mm Width) | 10.16mm | Surface Mount | -40°C~85°C TA | DRAM - FP | ASYNCHRONOUS | 1.2mm | 1 | DUAL | NOT SPECIFIED | 3.3V | NOT SPECIFIED | YES | 0.8mm | R-PDSO-G44 | 3V | 3.6V | 25ns | 16Mb 1M x 16 | Volatile | 3V~3.6V | 1MX16 | 16 | 16777216 bit | DRAM | Parallel | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
S25FL164K0XNFIQ10 | Cypress Semiconductor Corp | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tray | 2010 | FL1-K | Obsolete | 3 (168 Hours) | 8 | 3V | 6mm | ROHS3 Compliant | ALSO CONFIGURABLE AS 64M X 1 | 8-WDFN Exposed Pad | SPI, Serial | 64 Mb | Surface Mount | -40°C~85°C TA | FLASH - NOR | SYNCHRONOUS | 0.8mm | 8542.32.00.51 | 1 | e3 | MATTE TIN | DUAL | NOT SPECIFIED | 3V | NOT SPECIFIED | YES | 1.27mm | R-PDSO-N8 | 2.7V | 3.6V | 64Mb 8M x 8 | Non-Volatile | 24b | 2.7V~3.6V | 16MX4 | 4 | 108MHz | 2 | 3V | 256B | FLASH | SPI - Quad I/O | 3ms | ||||||||||||||||||||||||||||||||||||||||||||||||
 |
CY62128ELL-45SXAT | Cypress Semiconductor Corp | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 8 Weeks | Surface Mount | Tape & Reel (TR) | 2001 | MoBL® | Active | 3 (168 Hours) | 32 | EAR99 | 5V | 1 | 20.4465mm | ROHS3 Compliant | Lead Free | 32 | 32-SOIC (0.445, 11.30mm Width) | 1 Mb | Surface Mount | -40°C~85°C TA | SRAM - Asynchronous | 2.997mm | 1 | 16mA | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | DUAL | NOT SPECIFIED | 5V | NOT SPECIFIED | CY62128 | Not Qualified | 5V | 3-STATE | 1Mb 128K x 8 | Volatile | 17b | 4.5V~5.5V | 8 | Asynchronous | 0.000004A | 45 ns | 8b | COMMON | 2V | SRAM | Parallel | 45ns |
-
S25FS512SDSBHA210 Cypress Semiconductor Corp
Automotive, AEC-Q100, FS-S Memory IC Automotive, AEC-Q100, FS-S Series 8mm mm
Price: 0.0000
RFQ -
-
-
-
-
IS43R16800E-6TL ISSI, Integrated Silicon Solution Inc
Surface Mount Memory IC 128 Mb kb 22.22mm mm 220mA mA
Price: 2.3700
RFQ -
-
CY7C1568KV18-400BZC Cypress Semiconductor Corp
Surface Mount 165 Pin Memory IC CY7C1568 72 Mb kb 590mA mA 18b b
Price: 0.0000
RFQ -
-
-
IS61WV5128BLL-10BLI-TR ISSI, Integrated Silicon Solution Inc
Memory IC 4 Mb kb 40mA mA 8b b
Price: 0.0000
RFQ -
71342LA20PF8 Integrated Device Technology (IDT)
5V V Surface Mount 64 Pin Memory IC 32 kb kb 14mm mm 240mA mA 8b b
Price: 0.0000
RFQ -
-
CY7C2268KV18-550BZC Cypress Semiconductor Corp
Surface Mount 165 Pin Memory IC CY7C2268 36 Mb kb 700mA mA 18b b
Price: 0.0000
RFQ -
7024S35FB Integrated Device Technology (IDT)
5V V 84 Pin Memory IC 64 kb kb 29.2mm mm
Price: 0.0000
RFQ -
70T3339S200BC8 Integrated Device Technology (IDT)
Surface Mount 256 Pin Memory IC 9 Mb kb 17mm mm 525mA mA 18b b
Price: 0.0000
RFQ -
71V3559S75BQI Integrated Device Technology (IDT)
165 Pin Memory IC 4.5 Mb kb 15mm mm
Price: 0.0000
RFQ -
7005S35JI Integrated Device Technology (IDT)
Surface Mount Memory IC 64 kb kb 24mm mm 300mA mA 8b b
Price: 0.0000
RFQ -
70V25L15J Integrated Device Technology (IDT)
Surface Mount 84 Pin Memory IC 128 kb kb 29.21mm mm 185mA mA 16b b
Price: 0.0000
RFQ -
70V3589S133DRG8 Integrated Device Technology (IDT)
208 Pin Memory IC 2.3 Mb kb 28mm mm
Price: 0.0000
RFQ -
7142SA100CB Integrated Device Technology (IDT)
Through Hole Memory IC 16 kb kb 61.72mm mm 190mA mA 8b b
Price: 0.0000
RFQ -
6116LA150DB Integrated Device Technology (IDT)
5V V 24 Pin Memory IC 16 kb kb 32mm mm
Price: 0.0000
RFQ -
71256SA12TPG Integrated Device Technology (IDT)
5V V Through Hole 28 Pin Memory IC 256 kb kb 34.3mm mm 160mA mA 8b b
Price: 0.0000
RFQ -
7134LA70CB Integrated Device Technology (IDT)
5V V Through Hole 48 Pin Memory IC 32 kb kb 61.72mm mm 220mA mA 8b b
Price: 0.0000
RFQ -
-
IDT71016S15YI Integrated Device Technology (IDT)
5V V 44 Pin Memory IC 28.575mm mm
Price: 0.0000
RFQ -
-
-
S25FL164K0XNFIQ10 Cypress Semiconductor Corp
FL1-K Memory IC FL1-K Series 64 Mb kb 6mm mm
Price: 0.0000
RFQ -
CY62128ELL-45SXAT Cypress Semiconductor Corp
5V V Surface Mount MoBL® Memory IC MoBL® Series CY62128 1 Mb kb 20.4465mm mm 16mA mA 8b b
Price: 0.0000
RFQ
Need Help?
