Items : %s%s
Memory
Contact Plating
- Tin
ECCN Code
- 3A991.B.1.A
- EAR99
Factory Lead Time
- 11 Weeks
- 4 Weeks
- 5 Weeks
- 6 Weeks
- 7 Weeks
- 8 Weeks
JESD-609 Code
- e3
- e4
Manufacturer Package Identifier
- 24AA256-I/P
Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- 1 (Unlimited)
- 3 (168 Hours)
Mount
- Surface Mount
- Through Hole
Mounting Type
- Surface Mount
- Through Hole
Number of Pins
- 28
- 3
- 32
- 5
- 8
Number of Terminations
- 28
- 3
- 32
- 5
- 8
Operating Temperature
- -40°C~85°C TA
- 0°C~70°C TA
Package / Case
- 28-DIP (0.600, 15.24mm)
- 32-DIP (0.600, 15.24mm)
- 32-LCC (J-Lead)
- 32-TFSOP (0.488, 12.40mm Width)
- 8-DIP (0.300, 7.62mm)
- 8-SOIC (0.154, 3.90mm Width)
- 8-SOIC (0.209, 5.30mm Width)
- 8-TSSOP, 8-MSOP (0.118, 3.00mm Width)
- SC-74A, SOT-753
- TO-226-3, TO-92-3 (TO-226AA)
Packaging
- Bulk
- Tape & Reel (TR)
- Tray
- Tube
Part Status
- Active
- Obsolete
Pbfree Code
- yes
Published
- 1995
- 1997
- 2000
- 2002
- 2003
- 2004
- 2005
- 2007
- 2008
- 2009
- 2013
Series
- MoBL®
- SST39 MPF™
Surface Mount
- NO
- YES
Terminal Finish
- Matte Tin (Sn)
- Matte Tin (Sn) - annealed
- Nickel/Palladium/Gold (Ni/Pd/Au)
Termination
- SMD/SMT
- Through Hole
Weight
- 453.59237mg
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Datasheet | Factory Lead Time | Mount | Packaging | Published | Series | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | ECCN Code | Max Operating Temperature | Min Operating Temperature | Operating Supply Voltage | Number of Ports | Length | RoHS Status | Lead Free | Radiation Hardening | Number of Pins | Additional Feature | Package / Case | Interface | Max Supply Voltage | Reach Compliance Code | Min Supply Voltage | Density | Frequency | Width | Thickness | Mounting Type | Operating Temperature | Technology | Operating Mode | Height Seated (Max) | HTS Code | Number of Functions | Nominal Supply Current | Max Frequency | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Supply Voltage | Time@Peak Reflow Temperature-Max (s) | Base Part Number | Pin Count | Temperature Grade | Surface Mount | Terminal Pitch | JESD-30 Code | Supply Voltage-Min (Vsup) | Subcategory | Qualification Status | Power Supplies | Supply Voltage-Max (Vsup) | Supplier Device Package | Output Characteristics | Access Time | Screening Level | Memory Size | Memory Type | Address Bus Width | Supply Current-Max | Voltage - Supply | Organization | Memory Width | Memory Density | Sync/Async | Data Bus Width | Clock Frequency | Standby Current-Max | Access Time (Max) | Word Size | Output Enable | Alternate Memory Width | I/O Type | Programming Voltage | Data Polling | Toggle Bit | Command User Interface | Number of Sectors/Size | Page Size | Ready/Busy | Common Flash Interface | Refresh Cycles | Access Mode | Standby Voltage-Min | Memory Format | Memory Interface | Write Cycle Time - Word, Page | Sector Size | Sequential Burst Length | Interleaved Burst Length |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
CY7C1470BV33-167BZI | Cypress Semiconductor Corp | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 7 Weeks | Surface Mount | Tray | 2004 | NoBL™ | Active | 3 (168 Hours) | 165 | 3A991.B.2.A | 3.3V | 4 | 17mm | Non-RoHS Compliant | No | 165 | PIPELINED ARCHITECTURE | 165-LBGA | 72 Mb | Surface Mount | -40°C~85°C TA | SRAM - Synchronous, SDR | 1 | 450mA | e0 | Tin/Lead/Silver (Sn/Pb/Ag) | BOTTOM | 220 | 3.3V | 30 | CY7C1470 | 165 | 1mm | 3.135V | 3.6V | 3-STATE | 3.4ns | 72Mb 2M x 36 | Volatile | 21b | 3.135V~3.6V | 2MX36 | 36 | Synchronous | 167MHz | 36b | COMMON | SRAM | Parallel | |||||||||||||||||||||||||||||||||||||||||||||||||
 |
71321SA55JI | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Surface Mount | 2008 | no | Active | 3 (168 Hours) | 52 | EAR99 | 85°C | -40°C | 5V | 2 | 19mm | RoHS Compliant | Contains Lead | No | 52 | INTERRUPT FLAG; AUTOMATIC POWER-DOWN | PLCC | Parallel | 5.5V | 4.5V | 16 kb | 19mm | 3.63mm | CMOS | 1 | 190mA | e0 | Tin/Lead (Sn85Pb15) | QUAD | J BEND | 225 | 5V | 52 | INDUSTRIAL | SRAMs | 5V | 3-STATE | 55 ns | 2kB | RAM, SDR, SRAM | 22b | Asynchronous | 0.03A | 8b | COMMON | |||||||||||||||||||||||||||||||||||||||||||||||||
 |
IS66WVE1M16BLL-55BLI | ISSI, Integrated Silicon Solution Inc | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tray | Discontinued | 3 (168 Hours) | 48 | 8mm | ROHS3 Compliant | No | 48 | 48-TFBGA | 6mm | Surface Mount | -40°C~85°C TA | PSRAM (Pseudo SRAM) | 1.2mm | 1 | BOTTOM | 3V | YES | 0.75mm | 2.7V | 3.6V | 16Mb 1M x 16 | Volatile | 2.7V~3.6V | 1MX16 | 16 | 16777216 bit | 55 ns | PSRAM | Parallel | 55ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
70V7339S200BC8 | Renesas Electronics America Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 10 Weeks | Tape & Reel (TR) | Active | 4 (72 Hours) | Non-RoHS Compliant | 256-LBGA | Surface Mount | 0°C~70°C TA | SRAM - Dual Port, Synchronous | IDT70V7339 | 256-CABGA (17x17) | 3.4ns | 9Mb 512K x 18 | Volatile | 3.15V~3.45V | 200MHz | SRAM | Parallel | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IS42S16100H-7TLI | ISSI, Integrated Silicon Solution Inc | 3.2617 |
Min: 1 Mult: 1 |
0.00000000 | 6 Weeks | Tray | Active | 3 (168 Hours) | 50 | EAR99 | 1 | 20.95mm | ROHS3 Compliant | PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESH | 50-TSOP (0.400, 10.16mm Width) | 10.16mm | Surface Mount | -40°C~85°C TA | SDRAM | SYNCHRONOUS | 1.2mm | 1 | DUAL | 3.3V | YES | 0.8mm | R-PDSO-G50 | 3V | Not Qualified | 3.3V | 3.6V | 3-STATE | 5.5ns | 16Mb 1M x 16 | Volatile | 0.07mA | 3V~3.6V | 1MX16 | 16 | 16777216 bit | 143MHz | 0.0035A | COMMON | 2048 | DRAM | Parallel | 1248FP | 1248 | |||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IDT71V416VS10Y8 | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tape & Reel (TR) | 2005 | 44 | 3A991.B.2.A | 70°C | 0°C | 28.575mm | Non-RoHS Compliant | 44 | Parallel | unknown | 10.16mm | CMOS | 3.683mm | 8542.32.00.41 | 1 | e3 | MATTE TIN | DUAL | J BEND | 3.3V | 44 | COMMERCIAL | YES | 1.27mm | 3V | Not Qualified | 3.6V | RAM, SRAM - Asynchronous | 256KX16 | 16 | 4194304 bit | 10 ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
S29GL256P11TFI023 | Cypress Semiconductor Corp | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 16 Weeks | Surface Mount | Tape & Reel (TR) | 2003 | GL-P | Active | 3 (168 Hours) | 56 | 3A991.B.1.A | 18.4mm | ROHS3 Compliant | 56 | 56-TFSOP (0.724, 18.40mm Width) | 256 Mb | 14mm | Surface Mount | -40°C~85°C TA | FLASH - NOR | 1.2mm | 8542.32.00.51 | 1 | 110mA | e3 | Matte Tin (Sn) | DUAL | 260 | 3V | 40 | 0.5mm | 2.7V | Not Qualified | 3/3.3V | 3.6V | 256Mb 32M x 8 | Non-Volatile | 2.7V~3.6V | 1 | Asynchronous | 0.000005A | 110 ns | 8 | 3V | YES | YES | YES | 256 | 8/16words | YES | YES | FLASH | Parallel | 110ns | 128K | ||||||||||||||||||||||||||||||||||||||||||||
 |
IS43TR16128D-107MBL | ISSI, Integrated Silicon Solution Inc | 5.0622 |
Min: 1 Mult: 1 |
0.00000000 | 6 Weeks | Tray | Active | 3 (168 Hours) | 96 | 1 | 13mm | ROHS3 Compliant | AUTO/SELF REFRESH | 96-TFBGA | 9mm | Surface Mount | 0°C~95°C TC | SDRAM - DDR3 | SYNCHRONOUS | 1.2mm | 1 | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | BOTTOM | 260 | 1.5V | 10 | YES | 0.8mm | R-PBGA-B96 | 1.425V | 1.575V | 20ns | 2Gb 128M x 16 | Volatile | 1.425V~1.575V | 128MX16 | 16 | 2147483648 bit | 933MHz | DRAM | Parallel | 15ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IDT71V3557S85BQI8 | Renesas Electronics America Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tape & Reel (TR) | Obsolete | 3 (168 Hours) | Non-RoHS Compliant | 165-TBGA | Surface Mount | -40°C~85°C TA | SRAM - Synchronous, SDR (ZBT) | IDT71V3557 | 165-CABGA (13x15) | 8.5ns | 4.5Mb 128K x 36 | Volatile | 3.135V~3.465V | SRAM | Parallel | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IDT71V256SA12Y8 | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tape & Reel (TR) | 2010 | no | 3 (168 Hours) | 28 | EAR99 | 70°C | 0°C | 1 | 17.9324mm | Non-RoHS Compliant | 28 | Parallel | not_compliant | 7.5184mm | CMOS | 3.556mm | 8542.32.00.41 | 1 | e0 | Tin/Lead (Sn85Pb15) | DUAL | J BEND | 225 | 3.3V | 30 | 28 | COMMERCIAL | YES | 1.27mm | 3V | SRAMs | Not Qualified | 3.3V | 3.6V | 3-STATE | RAM, SRAM - Asynchronous | 0.09mA | 32KX8 | 8 | 262144 bit | 0.002A | 12 ns | YES | COMMON | 3V | ||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IS66WVC4M16EALL-7010BLI-TR | ISSI, Integrated Silicon Solution Inc | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 10 Weeks | Tape & Reel (TR) | Active | 3 (168 Hours) | ROHS3 Compliant | 54-VFBGA | Surface Mount | -40°C~85°C TC | PSRAM (Pseudo SRAM) | 54-VFBGA (6x8) | 70ns | 64Mb 4M x 16 | Volatile | 1.7V~1.95V | PSRAM | Parallel | 70ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IS45S16100E-7BLA1-TR | ISSI, Integrated Silicon Solution Inc | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tape & Reel (TR) | Discontinued | 3 (168 Hours) | ROHS3 Compliant | 60 | 60-TFBGA | Surface Mount | -40°C~85°C TA | SDRAM | 5.5ns | 16Mb 1M x 16 | Volatile | 3V~3.6V | 16b | 143MHz | DRAM | Parallel | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
71V67603S150PFGI8 | Renesas Electronics America Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 10 Weeks | Tape & Reel (TR) | Active | 3 (168 Hours) | ROHS3 Compliant | 100-LQFP | Surface Mount | -40°C~85°C TA | SRAM - Synchronous, SDR | IDT71V67603 | 3.8ns | 9Mb 256K x 36 | Volatile | 3.135V~3.465V | 150MHz | SRAM | Parallel | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
FM21LD16-60-BGTR | Cypress Semiconductor Corp | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Surface Mount | Tape & Reel (TR) | 2009 | F-RAM™ | Obsolete | 3 (168 Hours) | 48 | EAR99 | 3.3V | 8mm | ROHS3 Compliant | No | 48 | 48-TFBGA | 2 Mb | Surface Mount | -40°C~85°C TA | FRAM (Ferroelectric RAM) | 1.2mm | 8542.32.00.71 | 1 | 12mA | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | BOTTOM | 260 | 3.3V | FM21LD16 | 48 | 0.75mm | 2.7V | SRAMs | 3.6V | 2Mb 128K x 16 | Non-Volatile | 2.7V~3.6V | 128KX16 | 16 | 16b | 0.00027A | 110 ns | 16b | FRAM | Parallel | 110ns | |||||||||||||||||||||||||||||||||||||||||||||||||||
.png "MT40A1G8WE-083E AUT:B") |
MT40A1G8WE-083E AUT:B | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tray | Active | 78 | 1 | 12mm | RoHS Compliant | AUTO/SELF REFRESH | 78-TFBGA | compliant | 8mm | Surface Mount | -40°C~125°C TC | SDRAM - DDR4 | SYNCHRONOUS | 1.2mm | 1 | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | BOTTOM | 260 | 1.2V | 30 | YES | 0.8mm | R-PBGA-B78 | 1.14V | 1.26V | AEC-Q100 | 8Gb 1G x 8 | Volatile | 1.14V~1.26V | 8GX8 | 8 | 68719476736 bit | 1.2GHz | MULTI BANK PAGE BURST | DRAM | Parallel | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IDT71V3557SA80BQ8 | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tape & Reel (TR) | 2009 | 70°C | 0°C | Non-RoHS Compliant | 165 | Parallel | RAM, SRAM | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IDT71P73604S167BQ | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 2005 | 3 (168 Hours) | 165 | 3A991.B.2.A | 70°C | 0°C | 15mm | Non-RoHS Compliant | 165 | PIPELINED ARCHITECTURE | Parallel | not_compliant | 167MHz | 13mm | CMOS | SYNCHRONOUS | 1.2mm | 8542.32.00.41 | 1 | e0 | Tin/Lead (Sn63Pb37) | BOTTOM | BALL | 225 | 1.8V | 20 | 165 | COMMERCIAL | YES | 1mm | 1.7V | SRAMs | Not Qualified | 1.5/1.81.8V | 1.9V | 3-STATE | DDR2, RAM, SRAM | 0.6mA | 512KX36 | 36 | 18874368 bit | 0.275A | 0.5 ns | COMMON | 1.7V | |||||||||||||||||||||||||||||||||||||||||||||||||||
|
IDT70825L20G | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 2009 | 84 | EAR99 | 70°C | 0°C | 27.94mm | Non-RoHS Compliant | 84 | AUTOMATIC POWER-DOWN | Parallel | not_compliant | 27.94mm | CMOS | ASYNCHRONOUS | 5.207mm | 8542.32.00.41 | 1 | e0 | Tin/Lead (Sn/Pb) | PERPENDICULAR | PIN/PEG | NOT SPECIFIED | 5V | NOT SPECIFIED | 84 | COMMERCIAL | NO | 2.54mm | 4.5V | Other Memory ICs | Not Qualified | 5V | 5.5V | RAM | 0.33mA | 8KX16 | 16 | 131072 bit | 0.0015A | 20 ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
AT24C08D-MAHM-T | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Tape & Reel (TR) | 1997 | Active | 3 (168 Hours) | 85°C | -40°C | ROHS3 Compliant | 8-UFDFN Exposed Pad | 2-Wire, I2C, Serial | 1MHz | Surface Mount | -40°C~85°C TC | EEPROM | AT24C08 | 8-UDFN (2x3) | 4.5μs | 8Kb 1K x 8 | Non-Volatile | 1.7V~3.6V | 1MHz | EEPROM | I2C | 5ms | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
S34ML01G200BHA000 | Cypress Semiconductor Corp | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tray | 2015 | ML-2 | Discontinued | 3 (168 Hours) | 63 | 11mm | ROHS3 Compliant | 63 | 63-VFBGA | 9mm | Surface Mount | -40°C~85°C TA | FLASH - NAND | ASYNCHRONOUS | 1mm | 8542.32.00.51 | 1 | BOTTOM | NOT SPECIFIED | 3.3V | NOT SPECIFIED | YES | 0.8mm | 2.7V | 3.6V | AEC-Q100 | 1Gb 128M x 8 | Non-Volatile | 2.7V~3.6V | 128MX8 | 8 | 1073741824 bit | 3V | FLASH | Parallel | 25ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
MT47H64M8CB-5E IT:B | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tray | 2006 | Obsolete | 3 (168 Hours) | 60 | EAR99 | 1 | 12mm | ROHS3 Compliant | AUTO/SELF REFRESH | 60-FBGA | not_compliant | 10mm | Surface Mount | -40°C~95°C TC | SDRAM - DDR2 | SYNCHRONOUS | 1.2mm | 8542.32.00.28 | 1 | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | BOTTOM | 260 | 1.8V | 30 | MT47H64M8 | 60 | YES | 0.8mm | R-PBGA-B60 | 1.7V | Not Qualified | 1.8V | 1.9V | 3-STATE | 600ps | 512Mb 64M x 8 | Volatile | 0.22mA | 1.7V~1.9V | 64MX8 | 8 | 536870912 bit | 200MHz | 0.007A | COMMON | 8192 | DRAM | Parallel | 15ns | 48 | 48 | |||||||||||||||||||||||||||||||||||||||||||
 |
S29AS008J70BFI040 | Cypress Semiconductor Corp | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Surface Mount | Tray | AS-J | Obsolete | 3 (168 Hours) | EAR99 | 1.8V | ROHS3 Compliant | No | 48 | 48-VFBGA | 8 Mb | Surface Mount | -40°C~85°C TA | FLASH - NOR | 8542.32.00.51 | 12mA | 8Mb 1M x 8 512K x 16 | Non-Volatile | 1.65V~1.95V | Asynchronous | FLASH | Parallel | 70ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
IDT71V2559S80PFG | Renesas Electronics America Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tray | Obsolete | 3 (168 Hours) | 100-LQFP | Surface Mount | 0°C~70°C TA | SRAM - Synchronous, SDR (ZBT) | IDT71V2559 | 100-TQFP (14x14) | 8ns | 4.5Mb 256K x 18 | Volatile | 3.135V~3.465V | SRAM | Parallel | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
S29AS016J70WEI029 | Cypress Semiconductor Corp | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 20 Weeks | Bulk | 2012 | AS-J | Obsolete | 3 (168 Hours) | ROHS3 Compliant | Die | Surface Mount | -40°C~85°C TA | FLASH - NOR | 16Mb 2M x 8 1M x 16 | Non-Volatile | 1.65V~1.95V | FLASH | Parallel | 70ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
S29JL064J60WEI009 | Cypress Semiconductor Corp | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Bulk | JL-J | Obsolete | 3 (168 Hours) | ROHS3 Compliant | Surface Mount | -40°C~85°C TA | FLASH - NOR | 64Mb 8M x 8 4M x 16 | Non-Volatile | 2.7V~3.6V | FLASH | Parallel | 60ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IS64WV5128EDBLL-10BLA3 | ISSI, Integrated Silicon Solution Inc | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 10 Weeks | Tray | Active | 3 (168 Hours) | 36 | 1 | 8mm | ROHS3 Compliant | No | 36 | 36-TFBGA | 4 Mb | Surface Mount | -40°C~125°C TA | SRAM - Asynchronous | 1 | BOTTOM | 3V | 36 | YES | 0.75mm | 2.4V | 2.5/3.3V | 3.6V | 3-STATE | 4Mb 512K x 8 | Volatile | 19b | 0.065mA | 2.4V~3.6V | 8 | COMMON | 2V | SRAM | Parallel | 10ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
S34MS02G204BHI013 | Cypress Semiconductor Corp | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tape & Reel (TR) | 2015 | MS-2 | Discontinued | 3 (168 Hours) | 63 | 11mm | ROHS3 Compliant | 63 | 63-VFBGA | 9mm | Surface Mount | -40°C~85°C TA | FLASH - NAND | ASYNCHRONOUS | 1mm | 8542.32.00.51 | 1 | BOTTOM | NOT SPECIFIED | 1.8V | NOT SPECIFIED | YES | 0.8mm | 1.7V | Not Qualified | 1.8V | 1.95V | 2Gb 128M x 16 | Non-Volatile | 1.7V~1.95V | 128MX16 | 16 | 2147483648 bit | 0.00005A | 45 ns | 1.8V | NO | NO | YES | 2K | 1Kwords | YES | FLASH | Parallel | 45ns | 64K | ||||||||||||||||||||||||||||||||||||||||||||||||||
|
CY7C185-1XW14I | Cypress Semiconductor Corp | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Bulk | Obsolete | 3 (168 Hours) | Non-RoHS Compliant | Die | Surface Mount | -40°C~85°C TA | SRAM - Asynchronous | Die | 15ns | 64Kb 8K x 8 | Volatile | 4.5V~5.5V | SRAM | Parallel | 15ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
MT29F8G08ADAFAWP-AITES:F TR | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 12 Weeks | Tape & Reel (TR) | Active | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IS42S32800B-6BL-TR | ISSI, Integrated Silicon Solution Inc | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tape & Reel (TR) | Obsolete | 2 (1 Year) | 70°C | 0°C | RoHS Compliant | 90 | 90-TFBGA | Parallel | 3.6V | 3V | 166MHz | Surface Mount | 0°C~70°C TA | SDRAM | 166MHz | 90-TFBGA (8x13) | 5.5ns | 256Mb 8M x 32 | Volatile | 3V~3.6V | 32b | 166MHz | DRAM | Parallel |
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CY7C1470BV33-167BZI Cypress Semiconductor Corp
Surface Mount NoBL™ 165 Pin Memory IC NoBL™ Series CY7C1470 72 Mb kb 17mm mm 450mA mA 36b b
Price: 0.0000
RFQ -
71321SA55JI Integrated Device Technology (IDT)
5V V Surface Mount 52 Pin Memory IC 16 kb kb 19mm mm 190mA mA 8b b
Price: 0.0000
RFQ -
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IS42S16100H-7TLI ISSI, Integrated Silicon Solution Inc
3.3V V Memory IC 20.95mm mm
Price: 3.2617
RFQ -
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S29GL256P11TFI023 Cypress Semiconductor Corp
3/3.3V V Surface Mount GL-P Memory IC GL-P Series 256 Mb kb 18.4mm mm 110mA mA
Price: 0.0000
RFQ -
-
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IDT71V256SA12Y8 Integrated Device Technology (IDT)
3.3V V 28 Pin Memory IC 17.9324mm mm
Price: 0.0000
RFQ -
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-
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FM21LD16-60-BGTR Cypress Semiconductor Corp
Surface Mount F-RAM™ 48 Pin Memory IC F-RAM™ Series FM21LD16 2 Mb kb 8mm mm 12mA mA 16b b
Price: 0.0000
RFQ -
-
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IDT71P73604S167BQ Integrated Device Technology (IDT)
1.5/1.81.8V V 165 Pin Memory IC 15mm mm
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