Items : %s%s
Memory
Contact Plating
- Tin
ECCN Code
- 3A991.B.1.A
- EAR99
Factory Lead Time
- 11 Weeks
- 4 Weeks
- 5 Weeks
- 6 Weeks
- 7 Weeks
- 8 Weeks
JESD-609 Code
- e3
- e4
Manufacturer Package Identifier
- 24AA256-I/P
Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- 1 (Unlimited)
- 3 (168 Hours)
Mount
- Surface Mount
- Through Hole
Mounting Type
- Surface Mount
- Through Hole
Number of Pins
- 28
- 3
- 32
- 5
- 8
Number of Terminations
- 28
- 3
- 32
- 5
- 8
Operating Temperature
- -40°C~85°C TA
- 0°C~70°C TA
Package / Case
- 28-DIP (0.600, 15.24mm)
- 32-DIP (0.600, 15.24mm)
- 32-LCC (J-Lead)
- 32-TFSOP (0.488, 12.40mm Width)
- 8-DIP (0.300, 7.62mm)
- 8-SOIC (0.154, 3.90mm Width)
- 8-SOIC (0.209, 5.30mm Width)
- 8-TSSOP, 8-MSOP (0.118, 3.00mm Width)
- SC-74A, SOT-753
- TO-226-3, TO-92-3 (TO-226AA)
Packaging
- Bulk
- Tape & Reel (TR)
- Tray
- Tube
Part Status
- Active
- Obsolete
Pbfree Code
- yes
Published
- 1995
- 1997
- 2000
- 2002
- 2003
- 2004
- 2005
- 2007
- 2008
- 2009
- 2013
Series
- MoBL®
- SST39 MPF™
Surface Mount
- NO
- YES
Terminal Finish
- Matte Tin (Sn)
- Matte Tin (Sn) - annealed
- Nickel/Palladium/Gold (Ni/Pd/Au)
Termination
- SMD/SMT
- Through Hole
Weight
- 453.59237mg
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Datasheet | Factory Lead Time | Lifecycle Status | Mount | Packaging | Published | Series | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | ECCN Code | Max Operating Temperature | Min Operating Temperature | Operating Supply Voltage | Number of Ports | Length | RoHS Status | Lead Free | Contact Plating | Radiation Hardening | Number of Pins | Additional Feature | Package / Case | Interface | Max Supply Voltage | Reach Compliance Code | Min Supply Voltage | Density | Frequency | Height | Width | Thickness | Mounting Type | Operating Temperature | Technology | Operating Mode | Height Seated (Max) | HTS Code | Number of Functions | Nominal Supply Current | Max Frequency | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Supply Voltage | Time@Peak Reflow Temperature-Max (s) | Base Part Number | Pin Count | Temperature Grade | Surface Mount | Terminal Pitch | JESD-30 Code | Supply Voltage-Min (Vsup) | Subcategory | Qualification Status | Power Supplies | Supply Voltage-Max (Vsup) | Halogen Free | Supplier Device Package | Output Characteristics | Access Time | Frequency (Max) | Screening Level | Memory Size | Memory Type | Address Bus Width | Supply Current-Max | Voltage - Supply | Organization | Memory Width | Memory Density | Sync/Async | Data Bus Width | Parallel/Serial | Clock Frequency | Standby Current-Max | Access Time (Max) | Word Size | Data Retention Time-Min | Endurance | Write Protection | Write Cycle Time-Max (tWC) | I/O Type | Programming Voltage | Data Polling | Toggle Bit | Page Size | Serial Bus Type | Refresh Cycles | Standby Voltage-Min | Memory Format | Memory Interface | Write Cycle Time - Word, Page | Sequential Burst Length | Interleaved Burst Length |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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S29AL008J70BAI010 | Cypress Semiconductor Corp | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 18 Weeks | Tray | 2015 | AL-J | Active | 3 (168 Hours) | 85°C | -40°C | ROHS3 Compliant | 48 | 48-VFBGA | Parallel | Surface Mount | -40°C~85°C TA | FLASH - NOR | 48-FBGA (8.15x6.15) | 70ns | 8Mb 1M x 8 512K x 16 | Non-Volatile | 2.7V~3.6V | FLASH | Parallel | 70ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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71321SA55JI8 | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Surface Mount | 1997 | no | Active | 3 (168 Hours) | 52 | EAR99 | 85°C | -40°C | 5V | 2 | 19mm | RoHS Compliant | Contains Lead | No | 52 | INTERRUPT FLAG; AUTOMATIC POWER-DOWN | PLCC | Parallel | 5.5V | 4.5V | 16 kb | 19mm | 3.63mm | CMOS | 1 | 190mA | e0 | Tin/Lead (Sn85Pb15) | QUAD | J BEND | 225 | 5V | 52 | INDUSTRIAL | SRAMs | 5V | 3-STATE | 55 ns | 2kB | RAM, SDR, SRAM | 22b | Asynchronous | 0.03A | 8b | COMMON | ||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
S-24C32CI-I8T1U3 | ABLIC U.S.A. Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 18 Weeks | Tape & Reel (TR) | Active | 1 (Unlimited) | 8 | EAR99 | 2.23mm | RoHS Compliant | 100 YEAR DATA RETENTION | 8-SMD, Flat Lead | 1.97mm | Surface Mount | -40°C~85°C TA | CMOS | SYNCHRONOUS | 0.5mm | 8542.32.00.51 | 1 | e3 | TIN | DUAL | NOT SPECIFIED | 5V | NOT SPECIFIED | 8 | YES | 0.5mm | R-PDSO-F8 | 1.6V | Not Qualified | 5.5V | 900ns | 32Kb 4K x 8 | Non-Volatile | 1.6V~5.5V | 4KX8 | 8 | 32768 bit | SERIAL | 400kHz | 5ms | I2C | EEPROM | I2C | 5ms | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
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71V65903S85BGG | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | 2005 | Active | 70°C | 0°C | 3.3V | 1 | 14mm | RoHS Compliant | Lead Free | No | 119 | BGA | Parallel | 9 Mb | 22mm | 2.15mm | RAM, SRAM | 19b | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
CY7C1414AV18-200BZI | Cypress Semiconductor Corp | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tray | 2006 | Obsolete | 3 (168 Hours) | 165 | 3A991.B.2.A | 17mm | Non-RoHS Compliant | 165 | PIPELINED ARCHITECTURE | 165-LBGA | not_compliant | 15mm | Surface Mount | -40°C~85°C TA | SRAM - Synchronous, QDR II | 1.4mm | 8542.32.00.41 | 1 | e0 | Tin/Lead (Sn/Pb) | BOTTOM | 220 | 1.8V | NOT SPECIFIED | CY7C1414 | 165 | YES | 1mm | 1.7V | Not Qualified | 1.5/1.81.8V | 1.9V | 3-STATE | 450 ps | 36Mb 1M x 36 | Volatile | 0.87mA | 1.7V~1.9V | 1MX36 | 36 | 37748736 bit | 200MHz | 0.3A | SEPARATE | 1.7V | SRAM | Parallel | |||||||||||||||||||||||||||||||||||||||||||||||||||
 |
S29PL127J70TFI130H | Cypress Semiconductor Corp | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tray | PL-J | Obsolete | 3 (168 Hours) | ROHS3 Compliant | 56-TFSOP (0.724, 18.40mm Width) | Surface Mount | -40°C~85°C | FLASH - NOR | 128M 8M x 16 | Non-Volatile | 2.7V~3.6V | FLASH | Parallel | 70ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IS61LF102418B-6.5TQLI-TR | ISSI, Integrated Silicon Solution Inc | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 12 Weeks | Through Hole | Tape & Reel (TR) | Active | 3 (168 Hours) | 100 | 20mm | ROHS3 Compliant | 100 | FLOW-THROUGH | 100-LQFP | 14mm | Surface Mount | -40°C~85°C TA | SRAM - Synchronous, SDR | 1.6mm | 1 | QUAD | NOT SPECIFIED | 3.3V | NOT SPECIFIED | 0.65mm | 3.135V | 3.465V | 6.5ns | 18Mb 1M x 18 | Volatile | 3.135V~3.465V | 1MX18 | 18 | 18874368 bit | 133MHz | SRAM | Parallel | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
70261S25PFI8 | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Surface Mount | 2009 | no | Active | 3 (168 Hours) | 100 | EAR99 | 85°C | -40°C | 5V | 2 | 14mm | RoHS Compliant | Contains Lead | No | 100 | SEMAPHORE | TQFP | Parallel | 5.5V | 4.5V | 256 kb | 14mm | 1.4mm | CMOS | 1.6mm | 1 | 345mA | e0 | Tin/Lead (Sn85Pb15) | QUAD | GULL WING | 240 | 5V | 20 | 100 | INDUSTRIAL | 0.5mm | SRAMs | 5V | 3-STATE | 25 ns | 32kB | RAM, SDR, SRAM | 28b | 16KX16 | Asynchronous | 0.03A | 16b | COMMON | ||||||||||||||||||||||||||||||||||||||||||||||||
 |
S25FS256SAGMFM003 | Cypress Semiconductor Corp | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 13 Weeks | Tape & Reel (TR) | Automotive, AEC-Q100, FS-S | Active | 3 (168 Hours) | ROHS3 Compliant | 16-SOIC (0.295, 7.50mm Width) | Surface Mount | -40°C~125°C TA | FLASH - NOR | 8542.32.00.51 | 256Mb 32M x 8 | Non-Volatile | 1.7V~2V | 133MHz | FLASH | SPI - Quad I/O, QPI | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
71V3556SA166BGGI8 | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Surface Mount | Tape & Reel | 2006 | yes | Active | 3 (168 Hours) | 119 | 85°C | -40°C | 3.3V | 1 | 14mm | RoHS Compliant | Lead Free | No | 119 | BGA | Parallel | 3.465V | 3.135V | 4.5 Mb | 166MHz | 22mm | 2.15mm | CMOS | 2.36mm | 1 | 360mA | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | BOTTOM | BALL | 260 | 3.3V | 30 | 119 | INDUSTRIAL | SRAMs | 3-STATE | 3.5 ns | 166MHz | 512kB | RAM, SDR, SRAM | 17b | Synchronous | 0.045A | 36b | COMMON | ||||||||||||||||||||||||||||||||||||||||||||||||||
 |
MT47H128M4CF-25E:G | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Surface Mount | Tray | 2010 | yes | Obsolete | 3 (168 Hours) | 60 | EAR99 | 1.8V | 1 | 10mm | ROHS3 Compliant | Lead Free | No | 60 | AUTO/SELF REFRESH | 60-TFBGA | 512 Mb | Surface Mount | 0°C~85°C TC | SDRAM - DDR2 | 1.2mm | 8542.32.00.28 | 1 | 125mA | 800MHz | e1 | TIN SILVER COPPER | BOTTOM | 260 | 1.8V | 30 | MT47H128M4 | 60 | 0.8mm | 1.7V | 1.9V | 3-STATE | 400ps | 512Mb 128M x 4 | Volatile | 16b | 1.7V~1.9V | 128MX4 | 4 | 4b | 400MHz | 0.007A | COMMON | 8192 | DRAM | Parallel | 15ns | 48 | 48 | ||||||||||||||||||||||||||||||||||||||||||||
 |
S25FL129P0XBHV300 | Cypress Semiconductor Corp | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 13 Weeks | Tray | FL-P | Obsolete | 3 (168 Hours) | 24 | 3A991.B.1.A | 8mm | ROHS3 Compliant | 24-TBGA | 6mm | Surface Mount | -40°C~105°C TA | FLASH - NOR | SYNCHRONOUS | 1.2mm | 8542.32.00.51 | 1 | BOTTOM | 3V | YES | 1mm | R-PBGA-B24 | 2.7V | Not Qualified | 3/3.3V | 3.3V | 128Mb 16M x 8 | Non-Volatile | 0.038mA | 2.7V~3.6V | 16MX8 | 8 | 134217728 bit | SERIAL | 104MHz | 0.00001A | 20 | 100000 Write/Erase Cycles | HARDWARE/SOFTWARE | 3V | SPI | FLASH | SPI - Quad I/O | 5μs, 3ms | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
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AT25010AN-10SI-2.7 | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tube | Obsolete | 1 (Unlimited) | Non-RoHS Compliant | 8-SOIC (0.154, 3.90mm Width) | Surface Mount | -40°C~85°C TA | EEPROM | AT25010 | 8-SOIC | 1Kb 128 x 8 | Non-Volatile | 2.7V~5.5V | 20MHz | EEPROM | SPI | 5ms | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
LE25U20AMB-AH | ON Semiconductor | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 9 Weeks | ACTIVE (Last Updated: 4 days ago) | Surface Mount | Tape & Reel (TR) | 2012 | yes | Active | 3 (168 Hours) | 8 | 4.9mm | ROHS3 Compliant | Lead Free | No | 8 | 8-SOIC (0.154, 3.90mm Width) | SPI, Serial | 2 Mb | 1.5mm | 3.9mm | Surface Mount | -40°C~85°C TA | CMOS | 1 | 6mA | e3 | Tin (Sn) | DUAL | 2.5V | LE25U20A | 8 | 1.27mm | 2.3V | 2.5/3.3V | 3.6V | Halogen Free | 2Mb 256K x 8 | Non-Volatile | 18b | 2.3V~3.6V | Synchronous | 8b | 30MHz | 0.00001A | 8b | 20 | 100000 Write/Erase Cycles | HARDWARE/SOFTWARE | 15ms | 2.7V | 256B | SPI | FLASH | SPI | 5ms | |||||||||||||||||||||||||||||||||||||||||||||
.png "7140LA35L48B") |
7140LA35L48B | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 10 Weeks | Surface Mount | Bulk | 2013 | no | Active | 1 (Unlimited) | 48 | 125°C | -55°C | 5V | 2 | 14.2mm | RoHS Compliant | Contains Lead | No | 48 | LCC | Parallel | 5.5V | 4.5V | 8 kb | 14.22mm | 1.78mm | CMOS | 1 | 170mA | e0 | Tin/Lead (Sn/Pb) | QUAD | 240 | 5V | 48 | MILITARY | 1.016mm | SRAMs | 5V | 3-STATE | 35 ns | MIL-PRF-38535 | RAM, SRAM | 20b | 1KX8 | Asynchronous | 0.004A | 8b | COMMON | 2V | |||||||||||||||||||||||||||||||||||||||||||||||||||
 |
M25PX80-VMP6TGAD TR | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tape & Reel (TR) | Obsolete | 3 (168 Hours) | ROHS3 Compliant | 8-VDFN Exposed Pad | Surface Mount | -40°C~85°C TA | FLASH - NOR | 8-VFQFPN (6x5) | 8Mb 1M x 8 | Non-Volatile | 2.3V~3.6V | 75MHz | FLASH | SPI | 15ms, 5ms | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
MT53D1024M32D4DT-046 WT:D | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tray | Active | 3 (168 Hours) | ROHS3 Compliant | 200-VFBGA | Surface Mount | -30°C~85°C TC | SDRAM - Mobile LPDDR4 | 32Gb 1G x 32 | Volatile | 1.1V | 2.133GHz | DRAM | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IDT71V65603S100PFI8 | Renesas Electronics America Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tape & Reel (TR) | Obsolete | 3 (168 Hours) | Non-RoHS Compliant | 100-LQFP | Surface Mount | -40°C~85°C TA | SRAM - Synchronous, SDR (ZBT) | IDT71V65603 | 5ns | 9Mb 256K x 36 | Volatile | 3.135V~3.465V | 100MHz | SRAM | Parallel | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
AT28HC256E-12UM/883 | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 23 Weeks | Through Hole | Tray | 1997 | no | Active | 1 (Unlimited) | 28 | 5V | 16.51mm | Non-RoHS Compliant | Contains Lead | Lead, Tin | 28 | AUTOMATIC WRITE | 28-BCPGA | Parallel, SPI | 256 kb | 120GHz | 13.97mm | Through Hole | -55°C~125°C TC | CMOS | ASYNCHRONOUS | 4.4mm | 1 | 80mA | e0 | Tin/Lead (Sn/Pb) | PERPENDICULAR | 225 | 5V | 30 | AT28HC256 | 2.54mm | Not Qualified | 5V | 3-STATE | 120ns | MIL-STD-883 Class C | 256Kb 32K x 8 | Non-Volatile | 4.5V~5.5V | 32KX8 | 8 | 0.0003A | 100000 Write/Erase Cycles | 10ms | 5V | YES | YES | 64words | EEPROM | Parallel | 10ms | ||||||||||||||||||||||||||||||||||||||||||||
 |
IS61DDB21M18A-300M3L | ISSI, Integrated Silicon Solution Inc | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 12 Weeks | Tray | yes | Active | 3 (168 Hours) | 165 | 3A991.B.2.A | 17mm | ROHS3 Compliant | 165 | PIPELINED ARCHITECTURE | 165-LBGA | 15mm | Surface Mount | 0°C~70°C TA | SRAM - Synchronous, DDR II | 1.4mm | 8542.32.00.41 | 1 | e1 | TIN SILVER COPPER | BOTTOM | 260 | 1.8V | 40 | 165 | YES | 1mm | 1.71V | Not Qualified | 1.5/1.81.8V | 1.89V | 3-STATE | 18Mb 1M x 18 | Volatile | 0.55mA | 1.71V~1.89V | 1MX18 | 18 | 18874368 bit | 300MHz | 0.28A | 0.45 ns | COMMON | 1.7V | SRAM | Parallel | |||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
70T651S10BCI8 | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Surface Mount | Tape & Reel | 2009 | no | Active | 3 (168 Hours) | 256 | 85°C | -40°C | 2.5V | 2 | 17mm | RoHS Compliant | Contains Lead | No | 256 | Parallel | 2.6V | 2.4V | 9 Mb | 17mm | 1.4mm | CMOS | 1.5mm | 1 | 445mA | e0 | Tin/Lead (Sn63Pb37) | BOTTOM | BALL | 225 | 2.5V | 20 | 256 | INDUSTRIAL | 1mm | SRAMs | 3-STATE | 10 ns | RAM, SRAM | 18b | Asynchronous | 36b | COMMON | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
MT48V4M32LFB5-10:G TR | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tape & Reel (TR) | 2007 | Discontinued | 2 (1 Year) | ROHS3 Compliant | 90-VFBGA | Surface Mount | 0°C~70°C TA | SDRAM - Mobile LPSDR | MT48V4M32 | 90-VFBGA (8x13) | 7ns | 128Mb 4M x 32 | Volatile | 2.3V~2.7V | 100MHz | DRAM | Parallel | 15ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
CY62256NLL-70SNXA | Cypress Semiconductor Corp | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 8 Weeks | Surface Mount | Tube | 2002 | MoBL® | yes | Obsolete | 3 (168 Hours) | 28 | EAR99 | 5V | 1 | ROHS3 Compliant | Lead Free | No | 28 | 28-SOIC (0.295, 7.50mm Width) | 256 kb | Surface Mount | -40°C~85°C TA | SRAM - Asynchronous | 2.794mm | 1 | 50mA | 14MHz | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | DUAL | 260 | 5V | 30 | CY62256 | 28 | 5V | 3-STATE | 256Kb 32K x 8 | Volatile | 15b | 4.5V~5.5V | 32KX8 | 8 | Asynchronous | 70 ns | 8b | COMMON | 2V | SRAM | Parallel | 70ns | ||||||||||||||||||||||||||||||||||||||||||||||||||
 |
71T75602S150BGGI | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 8 Weeks | Surface Mount | 2012 | yes | Active | 3 (168 Hours) | 119 | 85°C | -40°C | 2.5V | 1 | 14mm | RoHS Compliant | Lead Free | No | 119 | PIPELINED ARCHITECTURE | BGA | Parallel | 2.625V | 2.375V | 18 Mb | 150MHz | 22mm | 2.15mm | CMOS | 2.36mm | 1 | 235mA | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | BOTTOM | BALL | 260 | 2.5V | 30 | 119 | INDUSTRIAL | SRAMs | 3-STATE | 3.8 ns | 150MHz | 2.3MB | RAM, SDR, SRAM | 19b | Synchronous | 0.06A | 36b | COMMON | 2.38V | |||||||||||||||||||||||||||||||||||||||||||||||||
 |
IDT71T016SA12PHI | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Surface Mount | Rail/Tube | 2008 | 3 (168 Hours) | 44 | 85°C | -40°C | 2.5V | 1 | Non-RoHS Compliant | 44 | TSOP | Parallel | 2.7V | not_compliant | 2.375V | 1 Mb | CMOS | 1 | 160mA | e0 | DUAL | GULL WING | 225 | 2.5V | 20 | 44 | INDUSTRIAL | 0.8mm | SRAMs | Not Qualified | 3-STATE | 12 ns | RAM, SRAM - Asynchronous | 16b | 16 | Asynchronous | 16b | COMMON | 2.38V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
70T653MS10BCG | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | 2009 | yes | Active | 3 (168 Hours) | 256 | 70°C | 0°C | 2.5V | 2 | 17mm | RoHS Compliant | Lead Free | No | 256 | Parallel | 2.6V | 2.4V | 18 Mb | 17mm | 1.4mm | CMOS | 1.5mm | 1 | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | BOTTOM | BALL | 260 | 2.5V | 30 | 256 | COMMERCIAL | YES | 1mm | SRAMs | 3-STATE | 10 ns | 2.3MB | RAM, SDR, SRAM | 38b | 0.81mA | COMMON | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
7140SA100J | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Surface Mount | 1997 | no | Active | 3 (168 Hours) | 52 | EAR99 | 70°C | 0°C | 5V | 2 | 19mm | RoHS Compliant | Contains Lead | No | 52 | PLCC | Parallel | 5.5V | 4.5V | 8 kb | 19mm | 3.63mm | CMOS | 4.57mm | 1 | 155mA | e0 | Tin/Lead (Sn85Pb15) | QUAD | J BEND | 225 | 5V | 52 | COMMERCIAL | SRAMs | 5V | 3-STATE | 100 ns | 1kB | RAM, SDR, SRAM | 20b | 1KX8 | Asynchronous | 0.015A | 8b | COMMON | |||||||||||||||||||||||||||||||||||||||||||||||||||
 |
71V35761S166PFGI8 | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 12 Weeks | Surface Mount | 2009 | yes | Active | 3 (168 Hours) | 100 | 85°C | -40°C | 3.3V | 1 | 20mm | RoHS Compliant | Lead Free | No | 100 | PIPELINED ARCHITECTURE | TQFP | Parallel | 3.465V | 3.135V | 4.5 Mb | 166MHz | 14mm | 1.4mm | CMOS | 1 | 330mA | e3 | Matte Tin (Sn) - annealed | QUAD | GULL WING | 260 | 3.3V | 30 | 100 | INDUSTRIAL | 0.65mm | SRAMs | 3-STATE | 3.5 ns | 166MHz | 512kB | RAM, SDR, SRAM | 17b | Synchronous | 0.035A | 36b | COMMON | ||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IDT71016S20PHI8 | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tape & Reel (TR) | 2010 | no | 3 (168 Hours) | 44 | 3A991.B.2.B | 85°C | -40°C | 18.41mm | Non-RoHS Compliant | TSOP | Parallel | not_compliant | 10.16mm | CMOS | 1.2mm | 8542.32.00.41 | 1 | e0 | Tin/Lead (Sn85Pb15) | DUAL | GULL WING | 225 | 5V | 20 | 44 | INDUSTRIAL | YES | 0.8mm | R-PDSO-G44 | 4.5V | SRAMs | Not Qualified | 5V | 5.5V | 3-STATE | RAM, SRAM - Asynchronous | 0.17mA | 64KX16 | 16 | 1048576 bit | 0.01A | 20 ns | COMMON | 4.5V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
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70V657S12BC8 | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Surface Mount | Tape & Reel | 2009 | no | Active | 3 (168 Hours) | 256 | 70°C | 0°C | 3.3V | 2 | 17mm | RoHS Compliant | Contains Lead | No | 256 | Parallel | 3.45V | 3.15V | 1.1 Mb | 17mm | 1.4mm | CMOS | 1.5mm | 1 | 465mA | e0 | Tin/Lead (Sn63Pb37) | BOTTOM | BALL | 225 | 3.3V | 256 | COMMERCIAL | 1mm | SRAMs | 3-STATE | 12 ns | RAM, SRAM | 30b | Asynchronous | 0.015A | 36b | COMMON |
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