Items : %s%s
Memory
Contact Plating
- Tin
ECCN Code
- 3A991.B.1.A
- EAR99
Factory Lead Time
- 11 Weeks
- 4 Weeks
- 5 Weeks
- 6 Weeks
- 7 Weeks
- 8 Weeks
JESD-609 Code
- e3
- e4
Manufacturer Package Identifier
- 24AA256-I/P
Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- 1 (Unlimited)
- 3 (168 Hours)
Mount
- Surface Mount
- Through Hole
Mounting Type
- Surface Mount
- Through Hole
Number of Pins
- 28
- 3
- 32
- 5
- 8
Number of Terminations
- 28
- 3
- 32
- 5
- 8
Operating Temperature
- -40°C~85°C TA
- 0°C~70°C TA
Package / Case
- 28-DIP (0.600, 15.24mm)
- 32-DIP (0.600, 15.24mm)
- 32-LCC (J-Lead)
- 32-TFSOP (0.488, 12.40mm Width)
- 8-DIP (0.300, 7.62mm)
- 8-SOIC (0.154, 3.90mm Width)
- 8-SOIC (0.209, 5.30mm Width)
- 8-TSSOP, 8-MSOP (0.118, 3.00mm Width)
- SC-74A, SOT-753
- TO-226-3, TO-92-3 (TO-226AA)
Packaging
- Bulk
- Tape & Reel (TR)
- Tray
- Tube
Part Status
- Active
- Obsolete
Pbfree Code
- yes
Published
- 1995
- 1997
- 2000
- 2002
- 2003
- 2004
- 2005
- 2007
- 2008
- 2009
- 2013
Series
- MoBL®
- SST39 MPF™
Surface Mount
- NO
- YES
Terminal Finish
- Matte Tin (Sn)
- Matte Tin (Sn) - annealed
- Nickel/Palladium/Gold (Ni/Pd/Au)
Termination
- SMD/SMT
- Through Hole
Weight
- 453.59237mg
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Datasheet | Factory Lead Time | Mount | Packaging | Published | Series | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | ECCN Code | Max Operating Temperature | Min Operating Temperature | Operating Supply Voltage | Number of Ports | Length | RoHS Status | Lead Free | Contact Plating | Radiation Hardening | Number of Pins | Additional Feature | Package / Case | Interface | Max Supply Voltage | REACH SVHC | Reach Compliance Code | Min Supply Voltage | Density | Frequency | Height | Width | Thickness | Mounting Type | Operating Temperature | Technology | Operating Mode | Height Seated (Max) | HTS Code | Number of Functions | Nominal Supply Current | Max Frequency | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Supply Voltage | Time@Peak Reflow Temperature-Max (s) | Base Part Number | Pin Count | Temperature Grade | Surface Mount | Terminal Pitch | JESD-30 Code | Supply Voltage-Min (Vsup) | Subcategory | Qualification Status | Power Supplies | Supply Voltage-Max (Vsup) | Voltage | Supplier Device Package | Output Characteristics | Access Time | Memory Size | Memory Type | Address Bus Width | Supply Current-Max | Voltage - Supply | Organization | Memory Width | Memory Density | Sync/Async | Data Bus Width | Parallel/Serial | Clock Frequency | Standby Current-Max | Access Time (Max) | Word Size | Output Enable | Alternate Memory Width | Data Retention Time-Min | Endurance | Write Protection | Write Cycle Time-Max (tWC) | I/O Type | Programming Voltage | Data Polling | Toggle Bit | Command User Interface | Number of Sectors/Size | Page Size | Ready/Busy | Common Flash Interface | Serial Bus Type | Standby Voltage-Min | Memory Format | Memory Interface | Write Cycle Time - Word, Page | Sector Size | Boot Block |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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RC28F128P33TF60A | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tray | 2010 | StrataFlash™ | no | Obsolete | 3 (168 Hours) | 64 | 10mm | Non-RoHS Compliant | No | 64 | 64-TBGA | Parallel, Serial | 128 Mb | Surface Mount | -40°C~85°C TC | FLASH - NOR | 1.2mm | 1 | 28mA | e0 | BOTTOM | 245 | 3V | 30 | 28F128P33 | 64 | YES | 0.5mm | 2.5/33V | 2.3V | 128Mb 8M x 16 | Non-Volatile | 23b | 2.3V~3.6V | 8MX16 | 16 | Asynchronous | 52MHz | 0.002A | 60 ns | 16b | NO | NO | 4127 | 8words | FLASH | Parallel | 60ns | TOP | ||||||||||||||||||||||||||||||||||||||||||||||||||||
.png "7142LA55L48B") |
7142LA55L48B | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Surface Mount | 2007 | Active | 125°C | -55°C | 5V | 2 | 14.2mm | RoHS Compliant | Contains Lead | No | 48 | LCC | Parallel | 5.5V | 4.5V | 16 kb | 14.22mm | 1.78mm | 140mA | 55 ns | 2kB | RAM, SDR, SRAM | 22b | Asynchronous | 8b | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
AS7C1026B-10TCNTR | Alliance Memory, Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 8 Weeks | Tape & Reel (TR) | 1996 | yes | Active | 3 (168 Hours) | 44 | 18.415mm | ROHS3 Compliant | 44-TSOP (0.400, 10.16mm Width) | 10.16mm | Surface Mount | 0°C~70°C TA | SRAM - Asynchronous | 1.2mm | 1 | e3/e6 | PURE MATTE TIN/TIN BISMUTH | DUAL | 260 | 5V | 40 | 44 | YES | 0.8mm | R-PDSO-G44 | 4.5V | 5.5V | 1Mb 64K x 16 | Volatile | 4.5V~5.5V | 64KX16 | 16 | 1048576 bit | 10 ns | SRAM | Parallel | 10ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
M50FLW080BN5G | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tray | 2006 | Obsolete | 3 (168 Hours) | 85°C | -20°C | ROHS3 Compliant | 40-TFSOP (0.724, 18.40mm Width) | Parallel | 33MHz | Surface Mount | -20°C~85°C TA | FLASH - NOR | M50FLW080 | 40-TSOP (10x20) | 250ns | 8Mb 1M x 8 | Non-Volatile | 3V~3.6V | 33MHz | FLASH | Parallel | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
M95020-DWDW4TP/K | STMicroelectronics | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 10 Weeks | Surface Mount | Cut Tape (CT) | Automotive, AEC-Q100 | Active | 1 (Unlimited) | 8 | 4.5mm | ROHS3 Compliant | 8 | 8-TSSOP (0.173, 4.40mm Width) | SPI, Serial | 1.05mm | 3.1mm | Surface Mount | -40°C~145°C TA | CMOS | SYNCHRONOUS | 1 | DUAL | M95020 | 0.65mm | 2.5V | 5.5V | 2Kb 256 x 8 | Non-Volatile | 2.5V~5.5V | 20MHz | 4ms | SPI | EEPROM | SPI | 4ms | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
71V416S12BEI8 | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 12 Weeks | Surface Mount | 2012 | no | Active | 4 (72 Hours) | 48 | 85°C | -40°C | 3.3V | 1 | 9mm | RoHS Compliant | Contains Lead | No | 48 | TFBGA | Parallel | 3.6V | 3V | 4 Mb | 9mm | 1.2mm | CMOS | 1 | 180mA | e0 | Tin/Lead (Sn63Pb37) | BOTTOM | BALL | 225 | 3.3V | 20 | 48 | INDUSTRIAL | 0.75mm | SRAMs | 3-STATE | 12 ns | 512kB | RAM, SDR, SRAM - Asynchronous | 18b | Asynchronous | 0.02A | 16b | COMMON | 3V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
BR93H46RF-2CE2 | ROHM Semiconductor | 0.8974 |
Min: 1 Mult: 1 |
0.00000000 | 16 Weeks | Cut Tape (CT) | 2016 | Automotive, AEC-Q100 | Active | 1 (Unlimited) | 8 | 5mm | ROHS3 Compliant | 8 | SEATED HT-CALCULATED | 8-SOIC (0.173, 4.40mm Width) | Unknown | 4.4mm | Surface Mount | -40°C~125°C TA | CMOS | SYNCHRONOUS | 1.71mm | 1 | DUAL | NOT SPECIFIED | 4V | NOT SPECIFIED | YES | 1.27mm | 2.5V | Not Qualified | 3/5V | 5.5V | 1Kb 64 x 16 | Non-Volatile | 0.003mA | 2.5V~5.5V | 64X16 | 16 | 1024 bit | SERIAL | 2MHz | 0.00001A | 100 | 1000000 Write/Erase Cycles | SOFTWARE | 4ms | MICROWIRE | EEPROM | SPI | 4ms | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
S25FL032P0XNFV001M | Cypress Semiconductor Corp | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 13 Weeks | Tray | FL-P | Obsolete | 1 (Unlimited) | ROHS3 Compliant | 8-WDFN Exposed Pad | Surface Mount | -40°C~105°C TA | FLASH - NOR | 8-WSON (6x8) | 32Mb 4M x 8 | Non-Volatile | 2.7V~3.6V | 104MHz | FLASH | SPI - Quad I/O | 5μs, 3ms | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
MT28F640J3RP-115 MET | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tray | 2005 | Obsolete | 2 (1 Year) | 56 | 3A991.B.1.A | 18.4mm | ROHS3 Compliant | 56-TFSOP (0.724, 18.40mm Width) | 14mm | Surface Mount | -40°C~85°C TA | CMOS | ASYNCHRONOUS | 1.2mm | 8542.32.00.51 | 1 | e3 | MATTE TIN | DUAL | 260 | 3V | 30 | MT28F640J3 | 56 | YES | 0.5mm | R-PDSO-G56 | 2.7V | Not Qualified | 3/3.3V | 3.6V | 115ns | 64Mb 8M x 8 4M x 16 | Non-Volatile | 0.08mA | 2.7V~3.6V | 4MX16 | 16 | 67108864 bit | 0.00012A | 8 | 2.7V | NO | NO | YES | 64 | 4/8words | YES | YES | FLASH | Parallel | 128K | |||||||||||||||||||||||||||||||||||||||||||||||||
|
MT53E768M64D4SQ-046 AIT:A TR | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tape & Reel (TR) | Obsolete | 3 (168 Hours) | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IS61WV25616EDBLL-8TLI | ISSI, Integrated Silicon Solution Inc | 6.6825 |
Min: 1 Mult: 1 |
0.00000000 | 8 Weeks | Tray | yes | Active | 3 (168 Hours) | 44 | 3.3V | 1 | ROHS3 Compliant | 44 | 44-TSOP (0.400, 10.16mm Width) | 4 Mb | Surface Mount | -40°C~85°C TA | SRAM - Asynchronous | 1 | 45mA | e3 | Matte Tin (Sn) | DUAL | 225 | 3.3V | NOT SPECIFIED | YES | 0.8mm | 2.97V | Not Qualified | 3.63V | 3-STATE | 4Mb 256K x 16 | Volatile | 18b | 3V~3.6V | 16 | Asynchronous | 0.006A | 8 ns | 16b | COMMON | 2V | SRAM | Parallel | 8ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
CYD02S36V18-200BBC | Rochester Electronics, LLC | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tray | Obsolete | 3 (168 Hours) | Non-RoHS Compliant | 256-LBGA | Surface Mount | 0°C~70°C TA | SRAM - Dual Port, Synchronous | 256-FBGA (17x17) | 3.3ns | 2Mb 64K x 36 | Volatile | 1.7V~1.9V | 200MHz | SRAM | Parallel | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
CY7C027V-15AXC | Cypress Semiconductor Corp | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 15 Weeks | Surface Mount | Tray | 2004 | yes | Obsolete | 3 (168 Hours) | 100 | 3.3V | 2 | 14mm | ROHS3 Compliant | Lead Free | No | 100 | AUTOMATIC POWER-DOWN | 100-LQFP | 512 kb | 15GHz | Surface Mount | 0°C~70°C TA | SRAM - Dual Port, Asynchronous | 1.6mm | 1 | 185mA | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | QUAD | 260 | 3.3V | 20 | CY7C027 | 100 | 0.5mm | 3V | 3.6V | 3-STATE | 512Kb 32K x 16 | Volatile | 15b | 3V~3.6V | 16 | Asynchronous | 0.00005A | 15 ns | 16b | COMMON | 2V | SRAM | Parallel | 15ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IDT71P74804S200BQG8 | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tape & Reel (TR) | 2008 | 70°C | 0°C | RoHS Compliant | 165 | Parallel | 200MHz | QDR, RAM, SRAM | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
S29GL256P11FFI020 | Cypress Semiconductor Corp | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 16 Weeks | Surface Mount | Tray | 2012 | GL-P | Active | 3 (168 Hours) | 64 | 3A991.B.1.A | 13mm | ROHS3 Compliant | Lead Free | No | 64 | 64-LBGA | No SVHC | 256 Mb | Surface Mount | -40°C~85°C TA | FLASH - NOR | 1.4mm | 8542.32.00.51 | 1 | 110mA | e1 | Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5) | BOTTOM | 260 | 3V | 40 | 1mm | 2.7V | 3/3.3V | 3.6V | 256Mb 32M x 8 | Non-Volatile | 2.7V~3.6V | 256MX1 | 1 | Asynchronous | 8b | 0.000005A | 110 ns | 8 | 3V | YES | YES | YES | 256 | 8/16words | YES | YES | FLASH | Parallel | 110ns | 128K | |||||||||||||||||||||||||||||||||||||||||||||||
|
71V124SA12YGI8 | Renesas Electronics America Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 14 Weeks | Tape & Reel (TR) | Active | 3 (168 Hours) | ROHS3 Compliant | 32-BSOJ (0.400, 10.16mm Width) | Surface Mount | -40°C~85°C TA | SRAM - Asynchronous | IDT71V124 | 1Mb 128K x 8 | Volatile | 3V~3.6V | SRAM | Parallel | 12ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
MT53D512M64D4NZ-046 WT ES:E TR | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tape & Reel (TR) | Active | 376-WFBGA | Surface Mount | -30°C~85°C TC | SDRAM - Mobile LPDDR4 | 376-WFBGA (14x14) | 32Gb 512M x 64 | Volatile | 1.1V | 2133MHz | DRAM | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
24LC025-E/P | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Through Hole | Tube | 2008 | Active | Not Applicable | 85°C | -40°C | 5V | ROHS3 Compliant | Tin | 8 | 8-DIP (0.300, 7.62mm) | I2C, Serial | 5.5V | 2.5V | 2 kb | 400kHz | Through Hole | -40°C~125°C TA | EEPROM | 3mA | 400kHz | 24LC025 | 8-PDIP | 900ns | 2Kb 256 x 8 | Non-Volatile | 2.5V~5.5V | 400kHz | EEPROM | I2C | 5ms | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
BR93H86RFVT-2CE2 | ROHM Semiconductor | 0.4202 |
Min: 1 Mult: 1 |
0.00000000 | 16 Weeks | Cut Tape (CT) | 2016 | Automotive, AEC-Q100 | Active | 1 (Unlimited) | 8 | 4.4mm | ROHS3 Compliant | 8 | 8-TSSOP (0.173, 4.40mm Width) | Unknown | 3mm | Surface Mount | -40°C~125°C TA | CMOS | SYNCHRONOUS | 1.2mm | 1 | DUAL | NOT SPECIFIED | 4V | NOT SPECIFIED | YES | 0.65mm | 2.5V | Not Qualified | 3/5V | 5.5V | 16Kb 1K x 16 | Non-Volatile | 0.003mA | 2.5V~5.5V | 1KX16 | 16 | SERIAL | 2MHz | 0.00001A | 100 | 1000000 Write/Erase Cycles | SOFTWARE | 4ms | 3-WIRE | EEPROM | SPI | 4ms | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
7130SA55PF8 | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Surface Mount | 2013 | no | Active | 3 (168 Hours) | 64 | EAR99 | 70°C | 0°C | 5V | 2 | 14mm | RoHS Compliant | Contains Lead | No | 64 | TQFP | Parallel | 5.5V | 4.5V | 8 kb | 14mm | 1.4mm | CMOS | 1.6mm | 1 | 155mA | e0 | Tin/Lead (Sn85Pb15) | QUAD | GULL WING | 240 | 5V | 20 | 64 | COMMERCIAL | 0.8mm | SRAMs | 5V | 3-STATE | 55 ns | 1kB | RAM, SDR, SRAM | 20b | 1KX8 | Asynchronous | 0.015A | 8b | COMMON | ||||||||||||||||||||||||||||||||||||||||||||||||||||
|
593995-002-00 | Cypress Semiconductor Corp | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 20 Weeks | Obsolete | Not Applicable | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
70V08L20PFI | Renesas Electronics America Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tray | Obsolete | 3 (168 Hours) | Non-RoHS Compliant | 100-LQFP | Surface Mount | -40°C~85°C TA | SRAM - Dual Port, Asynchronous | IDT70V08 | 512Kb 64K x 8 | Volatile | 3V~3.6V | SRAM | Parallel | 20ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
93AA56C-I/P | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 5 Weeks | Through Hole | Tube | 2007 | yes | Active | 1 (Unlimited) | 8 | EAR99 | 10.16mm | ROHS3 Compliant | Tin | No | 8 | 8-DIP (0.300, 7.62mm) | Serial | No SVHC | 2 kb | 4.953mm | 7.112mm | Through Hole | -40°C~85°C TA | CMOS | 1 | 2mA | e3 | DUAL | 2.5V | 93AA56C | 8 | 2.54mm | 5.5V | 200 ns | 2Kb 256 x 8 128 x 16 | Non-Volatile | 1.8V~5.5V | 3MHz | 0.000001A | 200 | 1000000 Write/Erase Cycles | SOFTWARE | MICROWIRE | EEPROM | SPI | 6ms | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
7140SA100P | Renesas Electronics America Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tube | Obsolete | 3 (168 Hours) | Non-RoHS Compliant | 48-DIP (0.600, 15.24mm) | Through Hole | 0°C~70°C TA | SRAM - Dual Port, Asynchronous | IDT7140 | 48-PDIP | 100ns | 8Kb 1K x 8 | Volatile | 4.5V~5.5V | SRAM | Parallel | 100ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
MT53D4DBNY-DC | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Bulk | Active | 3 (168 Hours) | ROHS3 Compliant | SDRAM - Mobile LPDDR4 | Volatile | DRAM | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
7133LA35PFI | Renesas Electronics America Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tray | Obsolete | 3 (168 Hours) | Non-RoHS Compliant | 100-LQFP | Surface Mount | -40°C~85°C TA | SRAM - Dual Port, Asynchronous | 32Kb 2K x 16 | Volatile | 4.5V~5.5V | SRAM | Parallel | 35ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IS65WV12816BLL-55TA3-TR | ISSI, Integrated Silicon Solution Inc | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tape & Reel (TR) | Obsolete | 2 (1 Year) | 125°C | -40°C | Non-RoHS Compliant | 44 | 44-TSOP (0.400, 10.16mm Width) | Parallel | 3.6V | 2.5V | Surface Mount | -40°C~125°C TA | SRAM - Asynchronous | 44-TSOP II | 55ns | 2Mb 128K x 16 | Volatile | 2.5V~3.6V | SRAM | Parallel | 55ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
AS6C2008A-55BIN | Alliance Memory, Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 8 Weeks | Tray | 2007 | yes | Active | 3 (168 Hours) | ROHS3 Compliant | 36-TFBGA | unknown | Surface Mount | -40°C~85°C TA | SRAM - Asynchronous | NOT SPECIFIED | NOT SPECIFIED | 2Mb 256K x 8 | Volatile | 2.7V~5.5V | SRAM | Parallel | 55ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
AS4C16M16MD1-6BINTR | Alliance Memory, Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tape & Reel (TR) | 2017 | Obsolete | 3 (168 Hours) | Non-RoHS Compliant | 60-TFBGA | Surface Mount | -40°C~85°C TA | SDRAM - Mobile LPDDR | 256Mb 16M x 16 | Volatile | 1.7V~1.95V | 166MHz | DRAM | Parallel | 15ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
M48Z128Y-85PM1 | STMicroelectronics | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Through Hole | Tube | Obsolete | 1 (Unlimited) | 32 | EAR99 | 5V | 1 | 42.8mm | ROHS3 Compliant | Lead Free | 32 | 10 YEARS OF DATA RETENTION; POWER SUPPLY WRITE PROTECTION; BATTERY BACK-UP | 32-DIP Module (0.600, 15.24mm) | 1 Mb | 85GHz | Through Hole | 0°C~70°C TA | NVSRAM (Non-Volatile SRAM) | ASYNCHRONOUS | 9.52mm | 1 | 105mA | e3 | Matte Tin (Sn) | DUAL | 260 | 5V | NOT SPECIFIED | M48Z128 | 32 | 2.54mm | SRAMs | Not Qualified | 5V | 3-STATE | 1Mb 128K x 8 | Non-Volatile | 4.5V~5.5V | 128KX8 | 8 | 8b | 0.004A | 85 ns | 8b | YES | NVSRAM | Parallel | 85ns |
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RC28F128P33TF60A Micron Technology Inc.
2.5/33V V StrataFlash™ 64 Pin Memory IC StrataFlash™ Series 28F128P33 128 Mb kb 10mm mm 28mA mA 16b b
Price: 0.0000
RFQ -
7142LA55L48B Integrated Device Technology (IDT)
Surface Mount Memory IC 16 kb kb 14.2mm mm 140mA mA 8b b
Price: 0.0000
RFQ -
-
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M95020-DWDW4TP/K STMicroelectronics
Surface Mount Automotive, AEC-Q100 Memory IC Automotive, AEC-Q100 Series M95020 4.5mm mm
Price: 0.0000
RFQ -
71V416S12BEI8 Integrated Device Technology (IDT)
Surface Mount 48 Pin Memory IC 4 Mb kb 9mm mm 180mA mA 16b b
Price: 0.0000
RFQ -
BR93H46RF-2CE2 ROHM Semiconductor
3/5V V Automotive, AEC-Q100 Memory IC Automotive, AEC-Q100 Series 5mm mm
Price: 0.8974
RFQ -
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MT28F640J3RP-115 MET Micron Technology Inc.
3/3.3V V 56 Pin Memory IC MT28F640J3 18.4mm mm
Price: 0.0000
RFQ -
-
IS61WV25616EDBLL-8TLI ISSI, Integrated Silicon Solution Inc
Memory IC 4 Mb kb 45mA mA 16b b
Price: 6.6825
RFQ -
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CY7C027V-15AXC Cypress Semiconductor Corp
Surface Mount 100 Pin Memory IC CY7C027 512 kb kb 14mm mm 185mA mA 16b b
Price: 0.0000
RFQ -
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S29GL256P11FFI020 Cypress Semiconductor Corp
3/3.3V V Surface Mount GL-P Memory IC GL-P Series 256 Mb kb 13mm mm 110mA mA
Price: 0.0000
RFQ -
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BR93H86RFVT-2CE2 ROHM Semiconductor
3/5V V Automotive, AEC-Q100 Memory IC Automotive, AEC-Q100 Series 4.4mm mm
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7130SA55PF8 Integrated Device Technology (IDT)
5V V Surface Mount 64 Pin Memory IC 8 kb kb 14mm mm 155mA mA 8b b
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93AA56C-I/P Microchip Technology
Through Hole 8 Pin Memory IC 93AA56C 2 kb kb 10.16mm mm 2mA mA
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M48Z128Y-85PM1 STMicroelectronics
5V V Through Hole 32 Pin Memory IC M48Z128 1 Mb kb 42.8mm mm 105mA mA 8b b
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