Items : %s%s
Memory
Contact Plating
- Tin
ECCN Code
- 3A991.B.1.A
- EAR99
Factory Lead Time
- 11 Weeks
- 4 Weeks
- 5 Weeks
- 6 Weeks
- 7 Weeks
- 8 Weeks
JESD-609 Code
- e3
- e4
Manufacturer Package Identifier
- 24AA256-I/P
Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- 1 (Unlimited)
- 3 (168 Hours)
Mount
- Surface Mount
- Through Hole
Mounting Type
- Surface Mount
- Through Hole
Number of Pins
- 28
- 3
- 32
- 5
- 8
Number of Terminations
- 28
- 3
- 32
- 5
- 8
Operating Temperature
- -40°C~85°C TA
- 0°C~70°C TA
Package / Case
- 28-DIP (0.600, 15.24mm)
- 32-DIP (0.600, 15.24mm)
- 32-LCC (J-Lead)
- 32-TFSOP (0.488, 12.40mm Width)
- 8-DIP (0.300, 7.62mm)
- 8-SOIC (0.154, 3.90mm Width)
- 8-SOIC (0.209, 5.30mm Width)
- 8-TSSOP, 8-MSOP (0.118, 3.00mm Width)
- SC-74A, SOT-753
- TO-226-3, TO-92-3 (TO-226AA)
Packaging
- Bulk
- Tape & Reel (TR)
- Tray
- Tube
Part Status
- Active
- Obsolete
Pbfree Code
- yes
Published
- 1995
- 1997
- 2000
- 2002
- 2003
- 2004
- 2005
- 2007
- 2008
- 2009
- 2013
Series
- MoBL®
- SST39 MPF™
Surface Mount
- NO
- YES
Terminal Finish
- Matte Tin (Sn)
- Matte Tin (Sn) - annealed
- Nickel/Palladium/Gold (Ni/Pd/Au)
Termination
- SMD/SMT
- Through Hole
Weight
- 453.59237mg
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Datasheet | Factory Lead Time | Mount | Packaging | Published | Series | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | Termination | ECCN Code | Max Operating Temperature | Min Operating Temperature | Operating Supply Voltage | Number of Ports | Length | RoHS Status | Lead Free | Contact Plating | Radiation Hardening | Number of Pins | Additional Feature | Package / Case | Interface | Max Supply Voltage | REACH SVHC | Reach Compliance Code | Min Supply Voltage | Density | Frequency | Height | Width | Thickness | Mounting Type | Operating Temperature | Technology | Operating Supply Current | Operating Mode | Height Seated (Max) | HTS Code | Number of Functions | Nominal Supply Current | Max Frequency | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Supply Voltage | Time@Peak Reflow Temperature-Max (s) | Base Part Number | Pin Count | Temperature Grade | Surface Mount | Terminal Pitch | JESD-30 Code | Supply Voltage-Min (Vsup) | Subcategory | Qualification Status | Power Supplies | Supply Voltage-Max (Vsup) | Voltage | Supplier Device Package | Output Characteristics | Access Time | Screening Level | Memory Size | Memory Type | Address Bus Width | Supply Current-Max | Voltage - Supply | Organization | Memory Width | Memory Density | Sync/Async | Data Bus Width | Parallel/Serial | Clock Frequency | Standby Current-Max | Access Time (Max) | Word Size | Alternate Memory Width | Data Retention Time-Min | Endurance | Write Protection | Write Cycle Time-Max (tWC) | I/O Type | Programming Voltage | Data Polling | Toggle Bit | Command User Interface | Number of Sectors/Size | Ready/Busy | Common Flash Interface | Serial Bus Type | Refresh Cycles | Access Mode | Standby Voltage-Min | Memory Format | Memory Interface | Write Cycle Time - Word, Page | Sector Size | Sequential Burst Length | Interleaved Burst Length | Boot Block |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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MX25U1635EZNI-10G | Macronix | 1.1638 |
Min: 1 Mult: 1 |
0.00000000 | download | Tray | 2013 | MX25xxx35/36 - MXSMIO™ | Not For New Designs | 3 (168 Hours) | 8 | EAR99 | 2V | 6mm | ROHS3 Compliant | Lead Free | ALSO CONFIGURABLE AS 16M X 1 | 8-WDFN Exposed Pad | SPI, Serial | 16 Mb | 5mm | Surface Mount | -40°C~85°C TA | FLASH - NOR | SYNCHRONOUS | 0.8mm | 8542.32.00.51 | 1 | DUAL | NOT SPECIFIED | 1.8V | NOT SPECIFIED | 8 | YES | 1.27mm | R-PDSO-N8 | 1.65V | Not Qualified | 1.8V | 2V | 16Mb 2M x 8 | Non-Volatile | 0.025mA | 1.65V~2V | 4MX4 | 4 | 104MHz | 0.00002A | 2 | 10 | 100000 Write/Erase Cycles | HARDWARE/SOFTWARE | 1.8V | SPI | FLASH | SPI | 30μs, 3ms | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
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AS4C64M8SA-7TCN | Alliance Memory, Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tray | 2012 | Obsolete | 3 (168 Hours) | 70°C | 0°C | RoHS Compliant | Lead Free | 54 | 54-TSOP (0.400, 10.16mm Width) | Parallel | 3.6V | 3V | 143MHz | Surface Mount | 0°C~70°C TA | SDRAM | 133MHz | 54-TSOP II | 5.4ns | 512Mb 64M x 8 | Volatile | 3V~3.6V | 8b | 133MHz | DRAM | Parallel | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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70T659S12DR | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Surface Mount | 2009 | no | Active | 3 (168 Hours) | 208 | 70°C | 0°C | 2.5V | 2 | 28mm | RoHS Compliant | Contains Lead | No | 208 | PQFP | Parallel | 2.6V | 2.4V | 4.5 Mb | 28mm | 3.5mm | CMOS | 4.1mm | 1 | 355mA | e0 | Tin/Lead (Sn/Pb) | QUAD | GULL WING | 225 | 2.5V | 20 | 208 | COMMERCIAL | 0.5mm | SRAMs | 3-STATE | 12 ns | RAM, SRAM | 34b | Asynchronous | 0.01A | 36b | COMMON | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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25LC020A-I/P | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Through Hole | Tube | 2005 | yes | Active | Not Applicable | 8 | Through Hole | EAR99 | 5V | 10.16mm | ROHS3 Compliant | Lead Free | No | 8 | DATA RETENTION > 200 YEARS; 1,000,000 ERASE/WRITE CYCLES | 8-DIP (0.300, 7.62mm) | SPI, Serial | No SVHC | 2 kb | 4.953mm | 7.112mm | Through Hole | -40°C~85°C TA | CMOS | 1 | 5mA | e3 | Matte Tin (Sn) | DUAL | 5V | 25LC020A | 8 | 2.54mm | 50 ns | 2Kb 256 x 8 | Non-Volatile | 2.5V~5.5V | 10MHz | 0.000001A | 200 | 1000000 Write/Erase Cycles | HARDWARE/SOFTWARE | 5ms | SPI | EEPROM | SPI | 5ms | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CY7C2170KV18-400BZC | Cypress Semiconductor Corp | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tray | 2003 | Obsolete | 3 (168 Hours) | 165 | 1.8V | 2 | 15mm | Non-RoHS Compliant | No | 165 | PIPELINED ARCHITECTURE | 165-LBGA | 18 Mb | Surface Mount | 0°C~70°C TA | SRAM - Synchronous, DDR II+ | 1.4mm | 1 | e0 | Tin/Lead (Sn/Pb) | BOTTOM | 240 | 1.8V | 30 | CY7C2170 | YES | 1mm | 1.7V | 1.9V | 450 ps | 18Mb 512K x 36 | Volatile | 18b | 1.7V~1.9V | 36 | 400MHz | SRAM | Parallel | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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M29F200FT55M3E2 | Micron Technology Inc. | 5.2245 |
Min: 1 Mult: 1 |
0.00000000 | download | Tray | 2010 | yes | Obsolete | 3 (168 Hours) | 44 | EAR99 | 5V | 28.5mm | ROHS3 Compliant | No | 44 | TOP BOOT BLOCK | 44-SOIC (0.496, 12.60mm Width) | 2 Mb | 12.6mm | Surface Mount | -40°C~125°C TA | FLASH - NOR | 3mm | 8542.32.00.51 | 1 | 20mA | DUAL | 260 | 5V | 30 | M29F200 | 44 | YES | 1.27mm | 5V | 4.5V | AEC-Q100 | 2Mb 256K x 8 128K x 16 | Non-Volatile | 4.5V~5.5V | 128KX16 | 16 | Asynchronous | 0.00012A | 55 ns | 8 | YES | YES | YES | 1213 | YES | YES | FLASH | Parallel | 55ns | 16K8K32K64K | TOP | |||||||||||||||||||||||||||||||||||||||||||||||||||||
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GD25LQ32DNIGR | GigaDevice Semiconductor (HK) Limited | 1.2778 |
Min: 1 Mult: 1 |
0.00000000 | download | 6 Weeks | Tape & Reel (TR) | Active | 3 (168 Hours) | ROHS3 Compliant | 8-UDFN Exposed Pad | Surface Mount | -40°C~85°C TA | FLASH - NOR | 32Mb 4M x 8 | Non-Volatile | 1.65V~2V | 120MHz | FLASH | SPI - Quad I/O | 2.4ms | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IDT71V3577SA75BGGI8 | Renesas Electronics America Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tape & Reel (TR) | Obsolete | 3 (168 Hours) | 119-BGA | Surface Mount | -40°C~85°C TA | SRAM - Synchronous, SDR | IDT71V3577 | 119-PBGA (14x22) | 7.5ns | 4.5Mb 128K x 36 | Volatile | 3.135V~3.465V | SRAM | Parallel | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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71V256SA15YG | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Surface Mount | 2006 | yes | Active | 3 (168 Hours) | 28 | EAR99 | 70°C | 0°C | 3.3V | 1 | 17.9mm | RoHS Compliant | Lead Free | No | 28 | Parallel | 3.6V | 3V | 256 kb | 7.6mm | 2.67mm | CMOS | 1 | 85mA | e3 | MATTE TIN | DUAL | J BEND | 260 | 3.3V | 28 | COMMERCIAL | SRAMs | 3-STATE | 15 ns | 32kB | RAM, SDR, SRAM - Asynchronous | 15b | 32KX8 | Asynchronous | 0.002A | 8b | COMMON | 3V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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W948D6FBHX6I | Winbond Electronics | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Surface Mount | Tray | Obsolete | 3 (168 Hours) | 60 | EAR99 | 1.8V | 1 | 9mm | ROHS3 Compliant | AUTO/SELF REFRESH | 60-TFBGA | 2 Gb | Surface Mount | -40°C~85°C TA | SDRAM - Mobile LPDDR | SYNCHRONOUS | 1.025mm | 8542.32.00.24 | 1 | 166MHz | BOTTOM | 1.8V | 60 | 0.8mm | R-PBGA-B60 | 1.7V | Not Qualified | 1.95V | 3-STATE | 5ns | 256Mb 16M x 16 | Volatile | 13b | 0.07mA | 1.7V~1.95V | 16MX16 | 16 | 16b | 0.00001A | COMMON | 8192 | DRAM | Parallel | 15ns | 24816 | 24816 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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AT49F001-55JC | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tube | 1997 | Obsolete | 2 (1 Year) | Non-RoHS Compliant | 32-LCC (J-Lead) | Surface Mount | 0°C~70°C TC | AT49F001 | 55ns | 1Mb 128K x 8 | Non-Volatile | 4.5V~5.5V | FLASH | Parallel | 50μs | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MT40A512M16JY-062E:B | Micron Technology Inc. | 7.1158 |
Min: 1 Mult: 1 |
0.00000000 | download | Tray | Obsolete | 3 (168 Hours) | 96 | EAR99 | 1 | 14mm | ROHS3 Compliant | AUTO/SELF REFRESH | 96-TFBGA | 8mm | Surface Mount | 0°C~95°C TC | SDRAM - DDR4 | SYNCHRONOUS | 1.2mm | 1 | BOTTOM | 1.2V | YES | 0.8mm | R-PBGA-B96 | 1.14V | 1.26V | 8Gb 512M x 16 | Volatile | 1.14V~1.26V | 512MX16 | 16 | 8589934592 bit | 1.6GHz | MULTI BANK PAGE BURST | DRAM | Parallel | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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7130LA55P | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Through Hole | Bulk | 2013 | no | Discontinued | 1 (Unlimited) | 48 | EAR99 | 70°C | 0°C | 5V | 2 | 61.7mm | RoHS Compliant | Contains Lead | No | 48 | PDIP | Parallel | 5.5V | 4.5V | 8 kb | 15.24mm | 3.8mm | CMOS | 5.08mm | 1 | 110mA | e0 | Tin/Lead (Sn85Pb15) | DUAL | 245 | 5V | 48 | COMMERCIAL | SRAMs | 5V | 3-STATE | 55 ns | 1kB | RAM, SDR, SRAM | 20b | 1KX8 | Asynchronous | 0.0015A | 8b | COMMON | 2V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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70V9279S12PRF8 | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Surface Mount | 2008 | no | Active | 3 (168 Hours) | 128 | 70°C | 0°C | 3.3V | 2 | 20mm | RoHS Compliant | Contains Lead | No | 128 | FLOW-THROUGH OR PIPELINED ARCHITECTURE | TQFP | Parallel | 3.6V | 3V | 512 kb | 33.3MHz | 14mm | 1.4mm | CMOS | 1.6mm | 1 | 240mA | e0 | Tin/Lead (Sn85Pb15) | QUAD | GULL WING | 225 | 3.3V | 128 | COMMERCIAL | 0.5mm | SRAMs | 3-STATE | 12 ns | 64kB | RAM, SDR, SRAM | 15b | Synchronous | 0.005A | 16b | COMMON | 3V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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DS28EC20Q+T | Maxim Integrated | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 13 Weeks | Tape & Reel (TR) | Active | 1 (Unlimited) | 6 | 1 | 3mm | ROHS3 Compliant | 6-WDFN Exposed Pad | 3mm | Surface Mount | -40°C~85°C TA | CMOS | ASYNCHRONOUS | 0.8mm | 1 | DUAL | NOT SPECIFIED | NOT SPECIFIED | DS28EC20 | YES | 0.95mm | S-XDSO-N6 | 4V | 5.25V | 20Kb 256 x 80 | Non-Volatile | 0.0009mA | 20KX1 | 1 | 20480 bit | SERIAL | 40 | 200000 Write/Erase Cycles | EEPROM | 1-Wire® | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BQ4011YMA-100 | Texas Instruments | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Through Hole | Tube | no | Obsolete | 1 (Unlimited) | 28 | EAR99 | 5V | 37.72mm | ROHS3 Compliant | Contains Lead | No | 28 | 28-DIP Module (0.61, 15.49mm) | No SVHC | 256 kb | 100GHz | Through Hole | 0°C~70°C TA | NVSRAM (Non-Volatile SRAM) | 50mA | 9.53mm | 8542.32.00.41 | 1 | 50mA | DUAL | 5V | BQ4011 | 2.54mm | SRAMs | 5V | 256Kb 32K x 8 | Non-Volatile | 4.5V~5.5V | 32KX8 | 8 | 8b | 0.004A | 100 ns | 8b | NVSRAM | Parallel | 100ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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THGBMJG6C1LBAIL | Kioxia America, Inc. | 5.7590 |
Min: 1 Mult: 1 |
0.00000000 | 12 Weeks | Tray | e•MMC™ | Active | 3 (168 Hours) | 153 | 13mm | RoHS Compliant | 153-WFBGA | 11.5mm | Surface Mount | -25°C~85°C TA | FLASH - NAND | SYNCHRONOUS | 0.8mm | 1 | BOTTOM | 3.3V | YES | 0.5mm | R-PBGA-B153 | 2.7V | 3.6V | 64Gb 8G x 8 | Non-Volatile | 8GX8 | 8 | 68719476736 bit | SERIAL | 52MHz | 3.3V | FLASH | eMMC | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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AS4C64M32MD1-5BINTR | Alliance Memory, Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 8 Weeks | Tape & Reel (TR) | 2011 | yes | Active | 3 (168 Hours) | ROHS3 Compliant | 90 | 90-VFBGA | unknown | Surface Mount | -40°C~85°C TA | SDRAM - Mobile LPDDR | NOT SPECIFIED | NOT SPECIFIED | 5ns | 2Gb 64M x 32 | Volatile | 1.7V~1.9V | 200MHz | DRAM | Parallel | 15ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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71V416S15PHG | Renesas Electronics America Inc. | 15.7721 |
Min: 1 Mult: 1 |
0.00000000 | download | 13 Weeks | Tube | Active | 3 (168 Hours) | ROHS3 Compliant | 44-TSOP (0.400, 10.16mm Width) | Surface Mount | 0°C~70°C TA | SRAM - Asynchronous | IDT71V416 | 44-TSOP II | 15ns | 4Mb 256K x 16 | Volatile | 3V~3.6V | SRAM | Parallel | 15ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IS42RM32400H-6BLI | ISSI, Integrated Silicon Solution Inc | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 12 Weeks | Tray | Active | 3 (168 Hours) | 90 | EAR99 | 1 | 13mm | ROHS3 Compliant | AUTO/SELF REFRESH | 90-TFBGA | 8mm | Surface Mount | -40°C~85°C TA | SDRAM - Mobile | SYNCHRONOUS | 1.2mm | 1 | e1 | Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5) | BOTTOM | NOT SPECIFIED | 2.5V | NOT SPECIFIED | YES | 0.8mm | R-PBGA-B90 | 2.3V | 3V | 5.5ns | 128Mb 4M x 32 | Volatile | 2.3V~2.7V | 4MX32 | 32 | 134217728 bit | 166MHz | DRAM | Parallel | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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AS4C256M16D3-12BINTR | Alliance Memory, Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 12 Weeks | Tape & Reel (TR) | 2014 | Discontinued | 3 (168 Hours) | 95°C | -40°C | 1.5V | ROHS3 Compliant | 96 | 96-TFBGA | Parallel | 4 Gb | 800MHz | Surface Mount | -40°C~95°C TC | SDRAM - DDR3 | 800MHz | 96-FBGA (9x13) | 20ns | 4Gb 256M x 16 | Volatile | 15b | 1.425V~1.575V | 800MHz | DRAM | Parallel | 15ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IS42S32800D-7TL-TR | ISSI, Integrated Silicon Solution Inc | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Surface Mount | Tape & Reel (TR) | Obsolete | 2 (1 Year) | 86 | EAR99 | 3.3V | 1 | 22.22mm | RoHS Compliant | Contains Lead | No | 86 | AUTO/SELF REFRESH | 86-TFSOP (0.400, 10.16mm Width) | 256 Mb | Surface Mount | 0°C~70°C TA | SDRAM | 1.2mm | 8542.32.00.24 | 1 | 150mA | e3 | TIN | DUAL | 260 | 3.3V | 10 | 0.5mm | 3V | 3.6V | 5.4ns | 256Mb 8M x 32 | Volatile | 13b | 3V~3.6V | 8MX32 | 32 | 32b | 143MHz | DRAM | Parallel | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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M95080-RMB6TG | STMicroelectronics | 6.7053 |
Min: 1 Mult: 1 |
0.00000000 | download | Surface Mount | Tape & Reel (TR) | Obsolete | 1 (Unlimited) | 8 | EAR99 | 5V | 2mm | ROHS3 Compliant | No | 8 | 8-UFDFN Exposed Pad | SPI, Serial | No SVHC | 8 kb | 530μm | 3mm | Surface Mount | -40°C~85°C TA | CMOS | 1 | 5mA | e4 | NICKEL PALLADIUM GOLD | BOTTOM | 260 | 5V | 30 | M95080 | 8 | 0.5mm | 80 ns | 8Kb 1K x 8 | Non-Volatile | 1.8V~5.5V | 10MHz | 5e-7A | 40 | 1000000 Write/Erase Cycles | HARDWARE/SOFTWARE | 5ms | SPI | EEPROM | SPI | 5ms | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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93LC46BT-I/MNY | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 5 Weeks | Surface Mount | Tape & Reel (TR) | 2008 | Active | 1 (Unlimited) | 8 | EAR99 | ROHS3 Compliant | Gold | 8 | 8-WFDFN Exposed Pad | Serial | 1 kb | Surface Mount | -40°C~85°C TA | CMOS | 2mA | e4 | DUAL | 260 | 40 | 93LC46B | 0.5mm | Not Qualified | 2/5V | 250 ns | 1Kb 64 x 16 | Non-Volatile | 2.5V~5.5V | 64X16 | 16 | 2MHz | 0.000001A | 200 | 1000000 Write/Erase Cycles | SOFTWARE | MICROWIRE | EEPROM | SPI | 6ms | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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W94AD2KBJX5E TR | Winbond Electronics | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 10 Weeks | Tape & Reel (TR) | Active | 3 (168 Hours) | ROHS3 Compliant | 90-TFBGA | Surface Mount | -25°C~85°C TC | SDRAM - Mobile LPDDR | 5ns | 1Gb 32M x 32 | Volatile | 1.7V~1.95V | 200MHz | DRAM | Parallel | 15ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IS49NLC36160-25BL | ISSI, Integrated Silicon Solution Inc | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tray | Active | 3 (168 Hours) | 144 | EAR99 | 1 | 18.5mm | ROHS3 Compliant | 144 | AUTO REFRESH | 144-TFBGA | Surface Mount | 0°C~70°C TA | CMOS | SYNCHRONOUS | 1.2mm | 8542.32.00.32 | 1 | 400MHz | BOTTOM | 1.8V | 144 | YES | 1mm | 1.7V | Not Qualified | 1.5/1.81.82.5V | 1.9V | 3-STATE | 20ns | 576Mb 16M x 36 | Volatile | 0.99mA | 1.7V~1.9V | 16MX36 | 36 | 603979776 bit | 36b | 0.048A | COMMON | DRAM | Parallel | 248 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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AT49BV8192A-90TC | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tray | 2001 | Obsolete | 3 (168 Hours) | Non-RoHS Compliant | 48-TFSOP (0.724, 18.40mm Width) | Surface Mount | 0°C~70°C TC | AT49BV8192 | 90ns | 8Mb 1M x 8 512K x 16 | Non-Volatile | 2.7V~3.6V | FLASH | Parallel | 30μs | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MT29F1G01ABBFDSF-IT:F TR | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tape & Reel (TR) | Obsolete | 3 (168 Hours) | ROHS3 Compliant | 16-SOIC (0.295, 7.50mm Width) | Surface Mount | -40°C~85°C TA | FLASH - NAND | 1Gb 1G x 1 | Non-Volatile | 1.7V~1.95V | FLASH | SPI | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IDT71V65602S150PFI | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 2007 | 3 (168 Hours) | 100 | 3A991.B.2.A | 85°C | -40°C | 20mm | Non-RoHS Compliant | PIPELINED ARCHITECTURE | LQFP | Parallel | not_compliant | 150MHz | 14mm | CMOS | SYNCHRONOUS | 1.6mm | 8542.32.00.41 | 1 | e0 | Tin/Lead (Sn85Pb15) | QUAD | GULL WING | 240 | 3.3V | 20 | 100 | INDUSTRIAL | YES | 0.65mm | R-PQFP-G100 | 3.135V | SRAMs | Not Qualified | 2.53.3V | 3.465V | 3-STATE | RAM, SRAM | 0.345mA | 256KX36 | 36 | 9437184 bit | 0.06A | 3.8 ns | COMMON | 3V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| GD25Q32CSIG | GigaDevice Semiconductor (HK) Limited | 0.2049 |
Min: 1 Mult: 1 |
0.00000000 | download | 6 Weeks | Tube | 2016 | Active | 3 (168 Hours) | 8 | 5.28mm | ROHS3 Compliant | 8-SOIC (0.209, 5.30mm Width) | 5.23mm | Surface Mount | -40°C~85°C TA | FLASH - NOR | SYNCHRONOUS | 2.16mm | 1 | DUAL | 3.3V | YES | 1.27mm | R-PDSO-G8 | 2.7V | 3.6V | 32Mb 4M x 8 | Non-Volatile | 0.025mA | 2.7V~3.6V | 32MX1 | 1 | 33554432 bit | SERIAL | 120MHz | 0.000005A | 20 | 100000 Write/Erase Cycles | HARDWARE/SOFTWARE | 2.7V | SPI | FLASH | SPI - Quad I/O | 50μs, 2.4ms | BOTTOM/TOP |
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