Items : %s%s
Memory
Contact Plating
- Tin
ECCN Code
- 3A991.B.1.A
- EAR99
Factory Lead Time
- 11 Weeks
- 4 Weeks
- 5 Weeks
- 6 Weeks
- 7 Weeks
- 8 Weeks
JESD-609 Code
- e3
- e4
Manufacturer Package Identifier
- 24AA256-I/P
Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- 1 (Unlimited)
- 3 (168 Hours)
Mount
- Surface Mount
- Through Hole
Mounting Type
- Surface Mount
- Through Hole
Number of Pins
- 28
- 3
- 32
- 5
- 8
Number of Terminations
- 28
- 3
- 32
- 5
- 8
Operating Temperature
- -40°C~85°C TA
- 0°C~70°C TA
Package / Case
- 28-DIP (0.600, 15.24mm)
- 32-DIP (0.600, 15.24mm)
- 32-LCC (J-Lead)
- 32-TFSOP (0.488, 12.40mm Width)
- 8-DIP (0.300, 7.62mm)
- 8-SOIC (0.154, 3.90mm Width)
- 8-SOIC (0.209, 5.30mm Width)
- 8-TSSOP, 8-MSOP (0.118, 3.00mm Width)
- SC-74A, SOT-753
- TO-226-3, TO-92-3 (TO-226AA)
Packaging
- Bulk
- Tape & Reel (TR)
- Tray
- Tube
Part Status
- Active
- Obsolete
Pbfree Code
- yes
Published
- 1995
- 1997
- 2000
- 2002
- 2003
- 2004
- 2005
- 2007
- 2008
- 2009
- 2013
Series
- MoBL®
- SST39 MPF™
Surface Mount
- NO
- YES
Terminal Finish
- Matte Tin (Sn)
- Matte Tin (Sn) - annealed
- Nickel/Palladium/Gold (Ni/Pd/Au)
Termination
- SMD/SMT
- Through Hole
Weight
- 453.59237mg
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Datasheet | Factory Lead Time | Mount | Packaging | Published | Series | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | ECCN Code | Max Operating Temperature | Min Operating Temperature | Operating Supply Voltage | Number of Ports | Length | RoHS Status | Lead Free | Contact Plating | Radiation Hardening | Number of Pins | Additional Feature | Package / Case | Interface | Max Supply Voltage | Reach Compliance Code | Min Supply Voltage | Density | Frequency | Width | Thickness | Mounting Type | Operating Temperature | Technology | Operating Mode | Height Seated (Max) | HTS Code | Number of Functions | Nominal Supply Current | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Supply Voltage | Time@Peak Reflow Temperature-Max (s) | Base Part Number | Pin Count | Temperature Grade | Surface Mount | Terminal Pitch | JESD-30 Code | Supply Voltage-Min (Vsup) | Subcategory | Qualification Status | Power Supplies | Supply Voltage-Max (Vsup) | Supplier Device Package | Output Characteristics | Access Time | Screening Level | Memory Size | Memory Type | Address Bus Width | Supply Current-Max | Voltage - Supply | Organization | Memory Width | Memory Density | Sync/Async | Data Bus Width | Parallel/Serial | Clock Frequency | Standby Current-Max | Access Time (Max) | Word Size | Output Enable | Alternate Memory Width | Data Retention Time-Min | Endurance | Write Protection | Write Cycle Time-Max (tWC) | I/O Type | Programming Voltage | Data Polling | Toggle Bit | Command User Interface | Number of Sectors/Size | Page Size | Ready/Busy | Common Flash Interface | Serial Bus Type | I2C Control Byte | Standby Voltage-Min | Memory Format | Memory Interface | Write Cycle Time - Word, Page | Sector Size | Boot Block |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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S34ML02G200TFV000 | Cypress Semiconductor Corp | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tray | ML-2 | Discontinued | 3 (168 Hours) | 48 | 18.4mm | ROHS3 Compliant | 48-TFSOP (0.724, 18.40mm Width) | 12mm | Surface Mount | -40°C~105°C TA | FLASH - NAND | ASYNCHRONOUS | 1.2mm | 8542.32.00.51 | 1 | e3 | Matte Tin (Sn) | DUAL | NOT SPECIFIED | 3V | NOT SPECIFIED | YES | 0.5mm | R-PDSO-G48 | 2.7V | 3.6V | 2Gb 256M x 8 | Non-Volatile | 2.7V~3.6V | 256MX8 | 8 | 2147483648 bit | 3V | FLASH | Parallel | 25ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
71342LA25PF8 | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Surface Mount | 2009 | no | Active | 3 (168 Hours) | 64 | EAR99 | 70°C | 0°C | 5V | 2 | 14mm | RoHS Compliant | Contains Lead | No | 64 | SEMAPHORE; AUTOMATIC POWER-DOWN; BATTERY BACKUP | TQFP | Parallel | 5.5V | 4.5V | 32 kb | 14mm | 1.4mm | CMOS | 1.6mm | 1 | 240mA | e0 | Tin/Lead (Sn85Pb15) | QUAD | GULL WING | 240 | 5V | 20 | 64 | COMMERCIAL | 0.8mm | SRAMs | 5V | 3-STATE | 25 ns | 4kB | RAM, SDR, SRAM | 24b | 4KX8 | Asynchronous | 0.0015A | 8b | COMMON | 2V | ||||||||||||||||||||||||||||||||||||||||||||||||
 |
S29GL256P11FFIV13 | Cypress Semiconductor Corp | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 16 Weeks | Tape & Reel (TR) | GL-P | Active | 3 (168 Hours) | 64 | 3A991.B.1.A | 13mm | ROHS3 Compliant | No | 64 | 64-LBGA | 256 Mb | 11mm | Surface Mount | -40°C~85°C TA | FLASH - NOR | 1.4mm | 8542.32.00.51 | 1 | e1 | Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5) | BOTTOM | 260 | 3V | 40 | YES | 1mm | 2.7V | 1.8/3.33/3.3V | 3.6V | 256Mb 32M x 8 | Non-Volatile | 0.11mA | 1.65V~3.6V | 256MX1 | 1 | 0.000005A | 110 ns | 8 | 3V | YES | YES | YES | 256 | 8/16words | YES | YES | FLASH | Parallel | 110ns | 128K | |||||||||||||||||||||||||||||||||||||||||||||||||
 |
MT29F384G08EBHBBJ4-3RES:B TR | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 12 Weeks | Tape & Reel (TR) | Active | 3 (168 Hours) | ROHS3 Compliant | 132-VBGA | Surface Mount | 0°C~70°C TA | FLASH - NAND | 384Gb 48G x 8 | Non-Volatile | 2.5V~3.6V | 333MHz | FLASH | Parallel | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
S29GL064N11TFIV63 | Cypress Semiconductor Corp | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Surface Mount | Tape & Reel (TR) | 2015 | GL-N | Obsolete | 3 (168 Hours) | 48 | 3A991.B.1.A | 3V | 18.4mm | ROHS3 Compliant | Tin | 48-TFSOP (0.724, 18.40mm Width) | 64 Mb | 12mm | Surface Mount | -40°C~85°C TA | FLASH - NOR | ASYNCHRONOUS | 1.2mm | 8542.32.00.51 | 1 | e3 | DUAL | 260 | 3V | 40 | 0.5mm | R-PDSO-G48 | 2.7V | Not Qualified | 3.6V | 64Mb 4M x 16 | Non-Volatile | 0.05mA | 1.65V~3.6V | 4MX16 | 16 | 0.000005A | 110 ns | 8 | 3V | YES | YES | YES | 128 | 8words | YES | YES | FLASH | Parallel | 110ns | 32K | BOTTOM/TOP | |||||||||||||||||||||||||||||||||||||||||||||||
.png "MT29C4G48MAYBBAKS-48 IT TR") |
MT29C4G48MAYBBAKS-48 IT TR | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tape & Reel (TR) | Active | 3 (168 Hours) | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
70V9289L9PRFI8 | Renesas Electronics America Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tape & Reel (TR) | Obsolete | 3 (168 Hours) | Non-RoHS Compliant | 128-LQFP | Surface Mount | -40°C~85°C TA | SRAM - Dual Port, Synchronous | IDT70V9289 | 128-TQFP (14x20) | 9ns | 1Mb 64K x 16 | Volatile | 3V~3.6V | SRAM | Parallel | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
CY7C131E-55JXCT | Cypress Semiconductor Corp | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Surface Mount | Tape & Reel (TR) | 2011 | Obsolete | 3 (168 Hours) | 52 | 5V | 2 | ROHS3 Compliant | Lead Free | No | 52 | 52-LCC (J-Lead) | 8 kb | Surface Mount | 0°C~70°C TA | SRAM - Dual Port, Asynchronous | 5.08mm | 1 | 160mA | e3 | Matte Tin (Sn) | QUAD | 5V | 5V | 3-STATE | 8Kb 1K x 8 | Volatile | 20b | 4.5V~5.5V | 1KX8 | 8 | Asynchronous | 0.015A | 55 ns | 8b | COMMON | SRAM | Parallel | 55ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
S29GL032N90FFI042 | Cypress Semiconductor Corp | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2015 | GL-N | Active | 3 (168 Hours) | 64 | 3A991.B.1.A | 13mm | ROHS3 Compliant | Lead Free | No | 64 | 64-LBGA | 32 Mb | 11mm | Surface Mount | -40°C~85°C TA | FLASH - NOR | 1.4mm | 8542.32.00.51 | 1 | 50mA | e1 | Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5) | BOTTOM | 260 | 3V | 40 | 1mm | 2.7V | 3/3.3V | 3.6V | 32Mb 4M x 8 2M x 16 | Non-Volatile | 2.7V~3.6V | 2MX16 | 16 | Asynchronous | 0.000005A | 90 ns | 8 | 3V | YES | YES | YES | 863 | 8/16words | YES | YES | FLASH | Parallel | 90ns | BOTTOM | ||||||||||||||||||||||||||||||||||||||||||||||
|
S29GL01GP13FAIV10 | Cypress Semiconductor Corp | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tray | 2015 | GL-P | Obsolete | 3 (168 Hours) | 64 | 3A991.B.1.A | 13mm | ROHS3 Compliant | No | 64 | 64-LBGA | 1 Gb | 11mm | Surface Mount | -40°C~85°C TA | FLASH - NOR | 1.4mm | 8542.32.00.51 | 1 | e0 | TIN LEAD | BOTTOM | 240 | 3V | 30 | YES | 1mm | 2.7V | 1.8/3.33/3.3V | 3.6V | 1Gb 128M x 8 | Non-Volatile | 0.11mA | 1.65V~3.6V | 1GX1 | 1 | 0.000005A | 130 ns | 8 | 3V | YES | YES | YES | 1K | 8/16words | YES | YES | FLASH | Parallel | 130ns | 128K | ||||||||||||||||||||||||||||||||||||||||||||||||
 |
24LC16BH-E/MS | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 16 Weeks | Surface Mount | Tube | 2008 | Active | 1 (Unlimited) | 8 | EAR99 | 5V | 3mm | ROHS3 Compliant | Tin | 8 | 8-TSSOP, 8-MSOP (0.118, 3.00mm Width) | I2C, Serial | 16 kb | 3mm | Surface Mount | -40°C~125°C TA | CMOS | SYNCHRONOUS | 1.1mm | 1 | 3mA | e3 | DUAL | 260 | 2.5V | 40 | 24LC16BH | 8 | 0.65mm | 1.7V | Not Qualified | 900ns | 16Kb 2K x 8 | Non-Volatile | 2.5V~5.5V | 8 | 400kHz | 0.000005A | 200 | 1000000 Write/Erase Cycles | HARDWARE | 5ms | I2C | 1010MMMR | EEPROM | I2C | 5ms | ||||||||||||||||||||||||||||||||||||||||||||||||||
 |
71V35761S183BG8 | Renesas Electronics America Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tape & Reel (TR) | Obsolete | 3 (168 Hours) | Non-RoHS Compliant | 119-BGA | Surface Mount | 0°C~70°C TA | SRAM - Synchronous, SDR | IDT71V35761 | 119-PBGA (14x22) | 3.3ns | 4.5Mb 128K x 36 | Volatile | 3.135V~3.465V | 183MHz | SRAM | Parallel | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IDT71V632S5PF | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 2015 | 3 (168 Hours) | 100 | 3A991.B.2.A | 70°C | 0°C | 1 | 20mm | Non-RoHS Compliant | PIPELINED ARCHITECTURE | LQFP | Parallel | not_compliant | 14mm | CMOS | SYNCHRONOUS | 1.6mm | 8542.32.00.41 | 1 | e0 | Tin/Lead (Sn85Pb15) | QUAD | GULL WING | 240 | 3.3V | 20 | 100 | COMMERCIAL | YES | 0.65mm | R-PQFP-G100 | 3.135V | SRAMs | Not Qualified | 3.3V | 3.63V | 3-STATE | RAM, SRAM | 0.2mA | 64KX32 | 32 | 2097152 bit | 100MHz | 0.015A | 5 ns | YES | COMMON | 3.14V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
|
MT53D512M32D2NP-046 WT ES:D | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tray | Obsolete | 1 (Unlimited) | 200-WFBGA | Surface Mount | -30°C~85°C TC | SDRAM - Mobile LPDDR4 | 16Gb 512M x 32 | Volatile | 1.1V | 2133MHz | DRAM | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IS45S16320F-7TLA2-TR | ISSI, Integrated Silicon Solution Inc | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 8 Weeks | Tape & Reel (TR) | yes | Active | 3 (168 Hours) | 54 | 1 | 22.22mm | ROHS3 Compliant | 54 | AUTO/SELF REFRESH | 54-TSOP (0.400, 10.16mm Width) | 10.16mm | Surface Mount | -40°C~105°C TA | SDRAM | SYNCHRONOUS | 1.2mm | 1 | DUAL | NOT SPECIFIED | 3.3V | NOT SPECIFIED | YES | 0.8mm | 3V | 3.6V | 5.4ns | 512Mb 32M x 16 | Volatile | 3V~3.6V | 32MX16 | 16 | 536870912 bit | 143MHz | DRAM | Parallel | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
MT46H16M32LFCM-6 IT:B TR | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tape & Reel (TR) | 2009 | yes | Obsolete | 3 (168 Hours) | 90 | EAR99 | 1 | 13mm | ROHS3 Compliant | AUTO/SELF REFRESH | 90-VFBGA | 10mm | Surface Mount | -40°C~85°C TA | SDRAM - Mobile LPDDR | SYNCHRONOUS | 1mm | 8542.32.00.28 | 1 | e1 | TIN SILVER COPPER | BOTTOM | 260 | 1.8V | 30 | MT46H16M32 | 90 | YES | 0.8mm | R-PBGA-B90 | 1.7V | Not Qualified | 1.95V | 5ns | 512Mb 16M x 32 | Volatile | 1.7V~1.95V | 16MX32 | 32 | 536870912 bit | 166MHz | DRAM | Parallel | 15ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
R1LP5256ESP-5SR#S0 | Renesas Electronics America | 4.8230 |
Min: 1 Mult: 1 |
0.00000000 | download | 24 Weeks | Surface Mount | Tape & Reel (TR) | 2011 | yes | Active | 1 (Unlimited) | 28 | EAR99 | 5V | 1 | ROHS3 Compliant | No | 28 | 28-SOIC (0.330, 8.38mm Width) | 256 kb | Surface Mount | 0°C~70°C TA | CMOS | 1 | 35mA | e2 | Tin/Copper (Sn/Cu) | DUAL | 260 | 5V | R1LP5256E | 28 | 5V | 3-STATE | 256Kb 32K x 8 | Volatile | 15b | 4.5V~5.5V | 32KX8 | 8 | Asynchronous | 0.000002A | 55 ns | 8b | COMMON | SRAM | Parallel | 55ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
S29GL128S10FHI010 | Cypress Semiconductor Corp | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 13 Weeks | Tray | 2015 | GL-S | Active | 3 (168 Hours) | 64 | 13mm | ROHS3 Compliant | No | 64 | 64-LBGA | 128 Mb | Surface Mount | -40°C~85°C TA | FLASH - NOR | 1.4mm | 8542.32.00.51 | 1 | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | BOTTOM | 260 | 3V | YES | 1mm | 2.7V | 3/3.3V | 3.6V | 100ns | 128Mb 8M x 16 | Non-Volatile | 23b | 0.08mA | 2.7V~3.6V | 8MX16 | 16 | 16b | 0.0001A | 2.7V | YES | YES | YES | 128 | 32B | YES | YES | FLASH | Parallel | 60ns | 64K | |||||||||||||||||||||||||||||||||||||||||||||||||
|
EDFA232A2PB-GD-F-D | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 9 Weeks | Tray | Obsolete | 3 (168 Hours) | ROHS3 Compliant | FBGA | Surface Mount | -30°C~85°C TC | SDRAM - Mobile LPDDR3 | 216-FBGA (12x12) | 16Gb 512M x 32 | Volatile | 1.14V~1.95V | 800MHz | DRAM | Parallel | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
S25FL256SAGBHVD00 | Cypress Semiconductor Corp | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 13 Weeks | Tray | FL-S | Active | 3 (168 Hours) | 24 | 3A991.B.1.A | 8mm | ROHS3 Compliant | 24 | ALSO CONFIGURABLE AS 128M X 1 | 24-TBGA | SPI, Serial | 6mm | Surface Mount | -40°C~105°C TA | FLASH - NOR | SYNCHRONOUS | 1.2mm | 8542.32.00.51 | 1 | BOTTOM | 3V | YES | 1mm | 2.7V | Not Qualified | 3/3.3V | 3.6V | 256Mb 32M x 8 | Non-Volatile | 0.1mA | 2.7V~3.6V | 64MX4 | 4 | 268435456 bit | 133MHz | 0.0003A | 2 | 20 | 100000 Write/Erase Cycles | HARDWARE/SOFTWARE | 500ms | 3V | SPI | FLASH | SPI - Quad I/O | BOTTOM | ||||||||||||||||||||||||||||||||||||||||||||||||||||
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S30ML02GP50TFI010 | Cypress Semiconductor Corp | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tray | Obsolete | 1 (Unlimited) | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IDT71V2559S80PF | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 2007 | 3 (168 Hours) | 100 | 3A991.B.2.A | 70°C | 0°C | 20mm | Non-RoHS Compliant | FLOW-THROUGH ARCHITECTURE | LQFP | Parallel | not_compliant | 14mm | CMOS | SYNCHRONOUS | 1.6mm | 8542.32.00.41 | 1 | e0 | Tin/Lead (Sn85Pb15) | QUAD | GULL WING | 240 | 3.3V | 20 | 100 | COMMERCIAL | YES | 0.65mm | R-PQFP-G100 | 3.135V | SRAMs | Not Qualified | 2.5/3.3V | 3.465V | 3-STATE | RAM, SRAM | 0.25mA | 256KX18 | 18 | 4718592 bit | 95MHz | 0.04A | 8 ns | COMMON | 3.14V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IDT70824L20PF | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 2009 | 3 (168 Hours) | 80 | EAR99 | 70°C | 0°C | 14mm | Non-RoHS Compliant | LQFP | Parallel | not_compliant | 14mm | CMOS | ASYNCHRONOUS | 1.6mm | 8542.32.00.41 | 1 | e0 | Tin/Lead (Sn85Pb15) | QUAD | GULL WING | 240 | 5V | 20 | 80 | COMMERCIAL | YES | 0.65mm | S-PQFP-G80 | 4.5V | Other Memory ICs | Not Qualified | 5V | 5.5V | RAM | 0.33mA | 4KX16 | 16 | 65536 bit | 0.0015A | 20 ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
IS61NVP25672-200B1-TR | ISSI, Integrated Silicon Solution Inc | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tape & Reel (TR) | Active | 3 (168 Hours) | ROHS3 Compliant | 209 | 209-BGA | Surface Mount | 0°C~70°C TA | SRAM - Synchronous, SDR | 3.1ns | 18Mb 256K x 72 | Volatile | 2.375V~2.625V | 200MHz | SRAM | Parallel | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IS46R16160F-5BLA1 | ISSI, Integrated Silicon Solution Inc | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 10 Weeks | Tray | Active | 3 (168 Hours) | 60 | 1 | 13mm | ROHS3 Compliant | AUTO/SELF REFRESH | 60-TFBGA | 8mm | Surface Mount | -40°C~85°C TA | SDRAM - DDR | SYNCHRONOUS | 1.2mm | 1 | BOTTOM | NOT SPECIFIED | 2.5V | NOT SPECIFIED | YES | 1mm | R-PBGA-B60 | 2.3V | 2.7V | 700ps | 256Mb 16M x 16 | Volatile | 2.3V~2.7V | 16MX16 | 16 | 268435456 bit | 200MHz | DRAM | Parallel | 15ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
AS4C256M16D3LA-12BAN | Alliance Memory, Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 8 Weeks | Tray | Automotive, AEC-Q100 | yes | Obsolete | 3 (168 Hours) | 96 | EAR99 | 1 | 13mm | RoHS Compliant | AUTO/SELF REFRESH; ALSO OPERATES AT 1.5V NOMINAL SUPPLY | 96-VFBGA | compliant | 9mm | Surface Mount | -40°C~105°C TC | SDRAM - DDR3L | SYNCHRONOUS | 1mm | 1 | BOTTOM | NOT SPECIFIED | 1.35V | NOT SPECIFIED | YES | 0.8mm | R-PBGA-B96 | 1.283V | 1.45V | 20ns | 4Gb 256M x 16 | Volatile | 1.283V~1.45V | 256MX16 | 16 | 4294967296 bit | 800MHz | DRAM | Parallel | 15ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
CAT25160LI-G | Rochester Electronics, LLC | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tube | Obsolete | 3 (168 Hours) | ROHS3 Compliant | 8-DIP (0.300, 7.62mm) | Through Hole | -40°C~85°C TA | EEPROM | 8-PDIP | 16Kb 2K x 8 | Non-Volatile | 1.8V~5.5V | 20MHz | EEPROM | SPI | 5ms | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
IS25LP032D-JNLA3 | ISSI, Integrated Silicon Solution Inc | 3.9752 |
Min: 1 Mult: 1 |
0.00000000 | 2 Weeks | Tray | Automotive, AEC-Q100 | Active | 3 (168 Hours) | 8 | 4.9mm | ROHS3 Compliant | 8-SOIC (0.154, 3.90mm Width) | 3.9mm | Surface Mount | -40°C~125°C TA | FLASH - NOR | SYNCHRONOUS | 1.75mm | 1 | e3 | Tin (Sn) | DUAL | NOT SPECIFIED | 3V | NOT SPECIFIED | YES | 1.27mm | R-PDSO-G8 | 2.3V | 3.6V | 32Mb 4M x 8 | Non-Volatile | 2.3V~3.6V | 4MX8 | 8 | 33554432 bit | SERIAL | 133MHz | 1 | 3V | FLASH | SPI - Quad I/O, QPI, DTR | 800μs | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IDT70V7339S166DD | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 2008 | 4 (72 Hours) | 144 | 3A991.B.2.A | 70°C | 0°C | 2 | 20mm | Non-RoHS Compliant | FLOW-THROUGH OR PIPELINED ARCHITECTURE | TQFP | Parallel | not_compliant | 166MHz | 20mm | CMOS | SYNCHRONOUS | 1.6mm | 8542.32.00.41 | 1 | e0 | Tin/Lead (Sn85Pb15) | QUAD | GULL WING | 225 | 3.3V | 30 | 144 | COMMERCIAL | YES | 0.5mm | S-PQFP-G144 | 3.15V | SRAMs | Not Qualified | 2.5/3.33.3V | 3.45V | 3-STATE | RAM, SRAM | 0.79mA | 512KX18 | 18 | 9437184 bit | 0.03A | 12 ns | COMMON | 3.15V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
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7134LA35CB | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 10 Weeks | Through Hole | Bulk | 2013 | no | Active | 1 (Unlimited) | 48 | 125°C | -55°C | 5V | 2 | 61.72mm | RoHS Compliant | Contains Lead | No | 48 | AUTOMATIC POWER-DOWN; BATTERY BACKUP | DIP | Parallel | 5.5V | 4.5V | 32 kb | 15.24mm | 3.3mm | CMOS | 1 | 250mA | e0 | Tin/Lead (Sn/Pb) | DUAL | 240 | 5V | 48 | MILITARY | SRAMs | 5V | 3-STATE | 35 ns | 38535Q/M;38534H;883B | RAM, SRAM | 24b | 4KX8 | Asynchronous | 0.004A | 8b | COMMON | 2V |
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