Items : %s%s
Memory
Contact Plating
- Tin
ECCN Code
- 3A991.B.1.A
- EAR99
Factory Lead Time
- 11 Weeks
- 4 Weeks
- 5 Weeks
- 6 Weeks
- 7 Weeks
- 8 Weeks
JESD-609 Code
- e3
- e4
Manufacturer Package Identifier
- 24AA256-I/P
Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- 1 (Unlimited)
- 3 (168 Hours)
Mount
- Surface Mount
- Through Hole
Mounting Type
- Surface Mount
- Through Hole
Number of Pins
- 28
- 3
- 32
- 5
- 8
Number of Terminations
- 28
- 3
- 32
- 5
- 8
Operating Temperature
- -40°C~85°C TA
- 0°C~70°C TA
Package / Case
- 28-DIP (0.600, 15.24mm)
- 32-DIP (0.600, 15.24mm)
- 32-LCC (J-Lead)
- 32-TFSOP (0.488, 12.40mm Width)
- 8-DIP (0.300, 7.62mm)
- 8-SOIC (0.154, 3.90mm Width)
- 8-SOIC (0.209, 5.30mm Width)
- 8-TSSOP, 8-MSOP (0.118, 3.00mm Width)
- SC-74A, SOT-753
- TO-226-3, TO-92-3 (TO-226AA)
Packaging
- Bulk
- Tape & Reel (TR)
- Tray
- Tube
Part Status
- Active
- Obsolete
Pbfree Code
- yes
Published
- 1995
- 1997
- 2000
- 2002
- 2003
- 2004
- 2005
- 2007
- 2008
- 2009
- 2013
Series
- MoBL®
- SST39 MPF™
Surface Mount
- NO
- YES
Terminal Finish
- Matte Tin (Sn)
- Matte Tin (Sn) - annealed
- Nickel/Palladium/Gold (Ni/Pd/Au)
Termination
- SMD/SMT
- Through Hole
Weight
- 453.59237mg
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Datasheet | Factory Lead Time | Mount | Packaging | Published | Series | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | ECCN Code | Max Operating Temperature | Min Operating Temperature | Operating Supply Voltage | Number of Ports | Length | RoHS Status | Lead Free | Contact Plating | Radiation Hardening | Number of Pins | Additional Feature | Package / Case | Interface | Max Supply Voltage | REACH SVHC | Reach Compliance Code | Min Supply Voltage | Density | Frequency | Width | Thickness | Mounting Type | Operating Temperature | Technology | Operating Mode | Max Supply Current | Height Seated (Max) | HTS Code | Number of Functions | Nominal Supply Current | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Supply Voltage | Time@Peak Reflow Temperature-Max (s) | Base Part Number | Pin Count | Temperature Grade | Surface Mount | Terminal Pitch | JESD-30 Code | Supply Voltage-Min (Vsup) | Subcategory | Qualification Status | Power Supplies | Supply Voltage-Max (Vsup) | Supplier Device Package | Output Characteristics | Access Time | Memory Size | Memory Type | Address Bus Width | Supply Current-Max | Voltage - Supply | Organization | Memory Width | Memory Density | Sync/Async | Data Bus Width | Parallel/Serial | Clock Frequency | Standby Current-Max | Access Time (Max) | Word Size | Alternate Memory Width | Data Retention Time-Min | Endurance | Write Protection | Write Cycle Time-Max (tWC) | I/O Type | Programming Voltage | Page Size | Serial Bus Type | I2C Control Byte | Refresh Cycles | Standby Voltage-Min | Memory Format | Memory Interface | Write Cycle Time - Word, Page | Sequential Burst Length | Interleaved Burst Length |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IDT71P71604S200BQ8 | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tape & Reel (TR) | 2007 | 3A991.B.2.A | 70°C | 0°C | Non-RoHS Compliant | 165 | Parallel | not_compliant | 200MHz | 8542.32.00.41 | 165 | DDR, RAM, SRAM | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
AT24C04AN-10SC-1.8 | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tube | Obsolete | 1 (Unlimited) | Non-RoHS Compliant | 8-SOIC (0.154, 3.90mm Width) | Surface Mount | 0°C~70°C TA | EEPROM | AT24C04 | 8-SOIC | 900ns | 4Kb 512 x 8 | Non-Volatile | 1.8V~5.5V | 400kHz | EEPROM | I2C | 5ms | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MT53E256M32D2DS-046 AUT:B TR | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tape & Reel (TR) | Active | 3 (168 Hours) | ROHS3 Compliant | 200-WFBGA | Surface Mount | -40°C~125°C | SDRAM - Mobile LPDDR4 | 8Gb 256M x 32 | Volatile | 0.6V 1.1V | 2.133GHz | DRAM | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
BR24A04F-WME2 | ROHM Semiconductor | 0.6456 |
Min: 1 Mult: 1 |
0.00000000 | download | 11 Weeks | Cut Tape (CT) | 2013 | Automotive, AEC-Q100 | yes | Active | 1 (Unlimited) | 8 | EAR99 | 5mm | ROHS3 Compliant | 8 | 8-SOIC (0.173, 4.40mm Width) | Unknown | 4.4mm | Surface Mount | -40°C~105°C TA | CMOS | SYNCHRONOUS | 1 | DUAL | NOT SPECIFIED | NOT SPECIFIED | 8 | YES | 1.27mm | 2.5V | Not Qualified | 3/5V | 5.5V | 4Kb 512 x 8 | Non-Volatile | 0.002mA | 2.5V~5.5V | 8 | SERIAL | 400kHz | 0.000002A | 40 | 100000 Write/Erase Cycles | HARDWARE | 5ms | I2C | 1010DDMR | EEPROM | I2C | 5ms | ||||||||||||||||||||||||||||||||||||||||||||||||
 |
BRCF016GWZ-3E2 | ROHM Semiconductor | 0.7945 |
Min: 1 Mult: 1 |
0.00000000 | download | 12 Weeks | Cut Tape (CT) | Active | 1 (Unlimited) | 4 | 0.86mm | ROHS3 Compliant | 4-XFBGA, CSPBGA | 0.84mm | Surface Mount | -40°C~85°C TA | CMOS | SYNCHRONOUS | 0.35mm | 1 | BOTTOM | NOT SPECIFIED | NOT SPECIFIED | YES | 0.4mm | R-PBGA-B4 | 1.7V | 5.5V | 16Kb 2K x 8 | Non-Volatile | 1.7V~5.5V | 2KX8 | 8 | 16384 bit | SERIAL | 1MHz | 5ms | I2C | EEPROM | I2C | 5ms | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
BR93G46F-3BGTE2 | ROHM Semiconductor | 0.5118 |
Min: 1 Mult: 1 |
0.00000000 | download | 10 Weeks | Cut Tape (CT) | Active | 1 (Unlimited) | 8 | 5mm | ROHS3 Compliant | IT ALSO OPERATES AT 1MHZ AT 1.7 MIN | 8-SOIC (0.173, 4.40mm Width) | 4.4mm | Surface Mount | -40°C~85°C TA | CMOS | SYNCHRONOUS | 1.71mm | 1 | e3 | Tin (Sn) | DUAL | NOT SPECIFIED | 5V | NOT SPECIFIED | YES | 1.27mm | R-PDSO-G8 | 4.5V | 5.5V | 1Kb 64 x 16 | Non-Volatile | 1.7V~5.5V | 64X16 | 16 | 1024 bit | SERIAL | 3MHz | 5ms | 3-WIRE | EEPROM | SPI | 5ms | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
BR25A512FJ-3MGE2 | ROHM Semiconductor | 1.4327 |
Min: 1 Mult: 1 |
0.00000000 | 10 Weeks | Cut Tape (CT) | Active | 1 (Unlimited) | 8 | 4.9mm | ROHS3 Compliant | SEATED HT-CALCULATED | 8-SOIC (0.154, 3.90mm Width) | 3.9mm | Surface Mount | -40°C~105°C TA | CMOS | SYNCHRONOUS | 1.65mm | 1 | DUAL | NOT SPECIFIED | NOT SPECIFIED | YES | 1.27mm | R-PDSO-G8 | 2.5V | 5.5V | 512Kb 64K x 8 | Non-Volatile | 2.5V~5.5V | 64KX8 | 8 | 524288 bit | SERIAL | 10MHz | 5ms | SPI | EEPROM | SPI | 5ms | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
BR93G56FJ-3GTE2 | ROHM Semiconductor | 0.7871 |
Min: 1 Mult: 1 |
0.00000000 | download | 10 Weeks | Cut Tape (CT) | Active | 1 (Unlimited) | 8 | 4.9mm | ROHS3 Compliant | SEATED HT-CALCULATED, ALSO AVAILABLE 1.7V-2.5V OPERATES WITH 1MHZ, 2.5V-4.5V OPERATES WITH 2MHZ | 8-SOIC (0.154, 3.90mm Width) | 3.9mm | Surface Mount | -40°C~85°C TA | CMOS | SYNCHRONOUS | 1.65mm | 1 | DUAL | NOT SPECIFIED | 5V | NOT SPECIFIED | YES | 1.27mm | R-PDSO-G8 | 4.5V | 5.5V | 2Kb 256 x 8 128 x 16 | Non-Volatile | 1.7V~5.5V | 128X16 | 16 | 2048 bit | SERIAL | 3MHz | 8 | 5ms | 3-WIRE | EEPROM | SPI | 5ms | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
S25FL164K0XMFIQ11 | Cypress Semiconductor Corp | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 11 Weeks | Tube | 2014 | FL1-K | Obsolete | 3 (168 Hours) | 8 | 3V | 5.283mm | ROHS3 Compliant | Lead Free | ALSO CONFIGURABLE AS 64M X 1 | 8-SOIC (0.209, 5.30mm Width) | SPI, Serial | 64 Mb | Surface Mount | -40°C~85°C TA | FLASH - NOR | SYNCHRONOUS | 2.159mm | 8542.32.00.51 | 1 | e3 | MATTE TIN | DUAL | NOT SPECIFIED | 3V | NOT SPECIFIED | YES | 1.27mm | S-PDSO-G8 | 2.7V | 3.6V | 64Mb 8M x 8 | Non-Volatile | 24b | 2.7V~3.6V | 16MX4 | 4 | 108MHz | 2 | 3V | 256B | FLASH | SPI - Quad I/O | 3ms | |||||||||||||||||||||||||||||||||||||||||||||||||
 |
70V27L20PFGI | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Surface Mount | Bulk | 2012 | yes | Active | 3 (168 Hours) | 100 | 85°C | -40°C | 3.3V | 2 | 14mm | RoHS Compliant | Lead Free | No | 100 | TQFP | Parallel | 3.6V | 3V | 512 kb | 14mm | 1.4mm | CMOS | 1 | 230mA | e3 | Matte Tin (Sn) - annealed | QUAD | GULL WING | 260 | 3.3V | 30 | 100 | INDUSTRIAL | 0.5mm | SRAMs | 3-STATE | 20 ns | 64kB | RAM, SDR, SRAM | 30b | Asynchronous | 0.006A | 16b | COMMON | 3V | |||||||||||||||||||||||||||||||||||||||||||||||
 |
70V9199L7PF8 | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Surface Mount | Tape & Reel | 2009 | no | Active | 3 (168 Hours) | 100 | 70°C | 0°C | 3.3V | 2 | 14mm | RoHS Compliant | Contains Lead | No | 100 | FLOW-THROUGH OR PIPELINED ARCHITECTURE | TQFP | Parallel | 3.6V | 3V | 1.1 Mb | 45.45MHz | 14mm | 1.4mm | CMOS | 1.6mm | 1 | 250mA | e0 | Tin/Lead (Sn85Pb15) | QUAD | GULL WING | 240 | 3.3V | 20 | 100 | COMMERCIAL | 0.5mm | SRAMs | 3-STATE | 18 ns | RAM, SRAM | 17b | Synchronous | 9b | COMMON | 3V | ||||||||||||||||||||||||||||||||||||||||||||||
 |
70125L25JG | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Surface Mount | Bulk | 2008 | yes | Active | 1 (Unlimited) | 52 | EAR99 | 70°C | 0°C | 5V | 2 | 19mm | RoHS Compliant | Lead Free | No | 52 | INTERRUPT FLAG; AUTOMATIC POWER-DOWN; BATTERY BACKUP | PLCC | Parallel | 5.5V | 4.5V | 18 kb | 19mm | 3.63mm | CMOS | 4.57mm | 1 | 220mA | e3 | Matte Tin (Sn) - annealed | QUAD | J BEND | 260 | 5V | 52 | COMMERCIAL | SRAMs | 5V | 3-STATE | 25 ns | 2.3kB | RAM, SDR, SRAM | 22b | Asynchronous | 0.015A | 9b | COMMON | 2V | |||||||||||||||||||||||||||||||||||||||||||||
 |
71V416S15BEGI8 | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 12 Weeks | Surface Mount | 2014 | yes | Active | 3 (168 Hours) | 48 | 85°C | -40°C | 3.3V | 1 | 9mm | RoHS Compliant | Lead Free | No | 48 | TFBGA | Parallel | 3.6V | 3V | 4 Mb | 9mm | 1.2mm | CMOS | 1 | 170mA | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | BOTTOM | BALL | 260 | 3.3V | 48 | INDUSTRIAL | 0.75mm | SRAMs | 3-STATE | 15 ns | 512kB | RAM, SDR, SRAM - Asynchronous | 18b | Asynchronous | 0.02A | 16b | COMMON | 3V | |||||||||||||||||||||||||||||||||||||||||||||||||
 |
70V09L20PFGI8 | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Tape & Reel | 2009 | 85°C | -40°C | 3.3V | 2 | 14mm | RoHS Compliant | Lead Free | No | 100 | TQFP | Parallel | 3.6V | 3V | 1 Mb | 14mm | 1.4mm | 20 ns | 128kB | RAM, SRAM | 34b | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
71V124SA10YG | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Surface Mount | 2013 | yes | Active | 3 (168 Hours) | 32 | 70°C | 0°C | 3.3V | 1 | 20.9mm | RoHS Compliant | Lead Free | No | 32 | Parallel | 3.6V | 3.15V | 1 Mb | 10.2mm | 2.2mm | CMOS | 145mA | 3.683mm | 1 | 145mA | e3 | Matte Tin (Sn) - annealed | DUAL | J BEND | 260 | 3.3V | 32 | COMMERCIAL | SRAMs | 3-STATE | 10 ns | 128kB | RAM, SDR, SRAM - Asynchronous | 17b | Asynchronous | 8b | COMMON | |||||||||||||||||||||||||||||||||||||||||||||||||||
 |
70V26S35J8 | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Surface Mount | 2009 | no | Active | EAR99 | 70°C | 0°C | 3.3V | 2 | 29.21mm | RoHS Compliant | Contains Lead | No | 84 | PLCC | Parallel | 3.6V | 3V | 256 kb | 29.21mm | 3.63mm | 140mA | 84 | 35 ns | 32kB | RAM, SDR, SRAM | 14b | Asynchronous | 16b | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
70V631S12PRF | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Surface Mount | Bulk | 2009 | no | Active | 3 (168 Hours) | 128 | 70°C | 0°C | 3.3V | 2 | 20mm | RoHS Compliant | Contains Lead | No | 128 | TQFP | Parallel | 3.45V | 3.15V | 4.5 Mb | 14mm | 1.4mm | CMOS | 1.6mm | 1 | 465mA | e0 | Tin/Lead (Sn85Pb15) | QUAD | GULL WING | 225 | 3.3V | 128 | COMMERCIAL | 0.5mm | SRAMs | 3-STATE | 12 ns | 512kB | RAM, SDR, SRAM | 36b | Asynchronous | 0.015A | 18b | COMMON | ||||||||||||||||||||||||||||||||||||||||||||||||
 |
AT49F001NT-12JI | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tube | 1997 | Obsolete | 2 (1 Year) | Non-RoHS Compliant | 32-LCC (J-Lead) | Surface Mount | -40°C~85°C TC | FLASH | AT49F001 | 32-PLCC (13.97x11.43) | 120ns | 1Mb 128K x 8 | Non-Volatile | 4.5V~5.5V | FLASH | Parallel | 50μs | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
BR93A46RFJ-WME2 | ROHM Semiconductor | 1.2458 |
Min: 1 Mult: 1 |
0.00000000 | download | 11 Weeks | Tape & Reel (TR) | Automotive, AEC-Q100 | Active | 1 (Unlimited) | 8 | 4.9mm | ROHS3 Compliant | SEATED HT-CALCULATED | 8-SOIC (0.154, 3.90mm Width) | 3.9mm | Surface Mount | -40°C~105°C TA | CMOS | SYNCHRONOUS | 1.65mm | 1 | DUAL | NOT SPECIFIED | 4V | NOT SPECIFIED | YES | 1.27mm | R-PDSO-G8 | 2.5V | Not Qualified | 3/5V | 5.5V | 1Kb 64 x 16 | Non-Volatile | 0.0045mA | 2.5V~5.5V | 64X16 | 16 | 1024 bit | SERIAL | 2MHz | 0.000002A | 40 | 1000000 Write/Erase Cycles | SOFTWARE | 5ms | 3-WIRE | EEPROM | SPI | 5ms | |||||||||||||||||||||||||||||||||||||||||||||||||
 |
BR24G02FVT-3AGE2 | ROHM Semiconductor | 0.1760 |
Min: 1 Mult: 1 |
0.00000000 | 10 Weeks | Surface Mount | Tape & Reel (TR) | 2014 | Active | 1 (Unlimited) | 8 | 4.4mm | ROHS3 Compliant | Tin | 8 | 8-TSSOP (0.173, 4.40mm Width) | 2-Wire, I2C, Serial | 2 kb | 3mm | Surface Mount | -40°C~85°C TA | CMOS | SYNCHRONOUS | 1.2mm | 1 | DUAL | NOT SPECIFIED | NOT SPECIFIED | BR24G02 | 0.65mm | 1.6V | 5.5V | 450 ns | 2Kb 256 x 8 | Non-Volatile | 1.6V~5.5V | 8 | 1MHz | 5ms | I2C | EEPROM | I2C | 5ms | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
BR24L08-W | ROHM Semiconductor | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 10 Weeks | Surface Mount | Tube | 2012 | yes | Obsolete | 1 (Unlimited) | 8 | EAR99 | 5V | 9.3mm | ROHS3 Compliant | Lead Free | Copper, Tin | 8 | 8-DIP (0.300, 7.62mm) | 2-Wire, I2C, Serial | 8 kb | 7.62mm | Through Hole | -40°C~85°C TA | CMOS | SYNCHRONOUS | 3.7mm | 1 | e3/e2 | TIN/TIN COPPER | DUAL | 260 | 2.5V | 10 | BR24L08 | 8 | 2.54mm | Not Qualified | 3.5 μs | 8Kb 1K x 8 | Non-Volatile | 0.002mA | 1.8V~5.5V | 8 | 400kHz | 0.000002A | 40 | 1000000 Write/Erase Cycles | HARDWARE | 5ms | I2C | 1010DMMR | EEPROM | I2C | 5ms | |||||||||||||||||||||||||||||||||||||||||||
|
BR25H640FJ-2ACE2 | ROHM Semiconductor | 1.1123 |
Min: 1 Mult: 1 |
0.00000000 | download | 15 Weeks | Tape & Reel (TR) | Automotive, AEC-Q100 | Active | 1 (Unlimited) | 8 | 4.9mm | ROHS3 Compliant | SEATED HT-CALCULATED | 8-SOIC (0.154, 3.90mm Width) | 3.9mm | Surface Mount | -40°C~125°C TA | CMOS | SYNCHRONOUS | 1.65mm | 1 | DUAL | NOT SPECIFIED | NOT SPECIFIED | YES | 1.27mm | R-PDSO-G8 | 2.5V | 5.5V | 64Kb 8K x 8 | Non-Volatile | 2.5V~5.5V | 8KX8 | 8 | 65536 bit | SERIAL | 10MHz | 4ms | SPI | EEPROM | SPI | 4ms | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IS61LF51236B-7.5B3LI-TR | ISSI, Integrated Silicon Solution Inc | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 12 Weeks | Tape & Reel (TR) | Active | 3 (168 Hours) | ROHS3 Compliant | 165-TFBGA | Surface Mount | -40°C~85°C TA | SRAM - Synchronous, SDR | 7.5ns | 18Mb 512K x 36 | Volatile | 3.135V~3.465V | 117MHz | SRAM | Parallel | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
71V35761S200BGG8 | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Surface Mount | Tape & Reel | 2009 | yes | Discontinued | 3 (168 Hours) | 119 | 70°C | 0°C | 3.3V | 1 | 14mm | RoHS Compliant | Lead Free | No | 119 | PIPELINED ARCHITECTURE | BGA | Parallel | 3.465V | 3.135V | 4.5 Mb | 200MHz | 22mm | 2.15mm | CMOS | 2.36mm | 1 | 360mA | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | BOTTOM | BALL | 260 | 3.3V | 30 | 119 | COMMERCIAL | SRAMs | 3-STATE | 3.1 ns | RAM, SRAM | 17b | Synchronous | 0.03A | 36b | COMMON | ||||||||||||||||||||||||||||||||||||||||||||||||
 |
IDT71024S12YI | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 2007 | no | 3 (168 Hours) | 32 | 3A991.B.2.B | 85°C | -40°C | 20.96mm | Non-RoHS Compliant | 32 | Parallel | not_compliant | 10.16mm | CMOS | 3.683mm | 1 | e0 | Tin/Lead (Sn85Pb15) | DUAL | J BEND | 225 | 5V | 30 | 32 | INDUSTRIAL | YES | 1.27mm | 4.5V | SRAMs | Not Qualified | 5V | 5.5V | 3-STATE | RAM, SRAM - Asynchronous | 0.16mA | 128KX8 | 8 | 1048576 bit | 0.01A | 12 ns | COMMON | 4.5V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
70T631S10BCI | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Surface Mount | 2009 | no | Active | 3 (168 Hours) | 256 | 85°C | -40°C | 2.5V | 2 | 17mm | RoHS Compliant | Contains Lead | No | 256 | Parallel | 2.6V | 2.4V | 4 Mb | 17mm | 1.4mm | CMOS | 1.5mm | 1 | 445mA | e0 | Tin/Lead (Sn63Pb37) | BOTTOM | BALL | 225 | 2.5V | 20 | 256 | INDUSTRIAL | 1mm | SRAMs | 3-STATE | 10 ns | 512kB | RAM, SDR, SRAM | 36b | Asynchronous | 18b | COMMON | ||||||||||||||||||||||||||||||||||||||||||||||||||
.png "MT53B512M64D8HR-053 WT:B") |
MT53B512M64D8HR-053 WT:B | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tray | Active | 3 (168 Hours) | ROHS3 Compliant | -30°C~85°C TC | SDRAM - Mobile LPDDR4 | 32Gb 512M x 64 | Volatile | 1.1V | 1866MHz | DRAM | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IDT71256L25Y8 | Renesas Electronics America Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tape & Reel (TR) | Obsolete | 1 (Unlimited) | Non-RoHS Compliant | 28-BSOJ (0.300, 7.62mm Width) | Surface Mount | 0°C~70°C TA | SRAM - Asynchronous | IDT71256 | 256Kb 32K x 8 | Volatile | 4.5V~5.5V | SRAM | Parallel | 25ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
CY7C1444AV33-167AXCT | Cypress Semiconductor Corp | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tape & Reel (TR) | 2004 | Obsolete | 3 (168 Hours) | 100 | 3A991.B.2.A | 20mm | ROHS3 Compliant | Lead Free | PIPELINED ARCHITECTURE | 100-LQFP | unknown | 14mm | Surface Mount | 0°C~70°C TA | SRAM - Synchronous, SDR | 1.6mm | 8542.32.00.41 | 1 | e3/e4 | MATTE TIN/NICKEL PALLADIUM GOLD | QUAD | 3.3V | CY7C1444 | 100 | YES | 0.65mm | R-PQFP-G100 | 3.135V | Not Qualified | 3.6V | 3.4ns | 36Mb 1M x 36 | Volatile | 3.135V~3.6V | 1MX36 | 36 | 37748736 bit | 167MHz | SRAM | Parallel | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IS43DR86400C-3DBLI | ISSI, Integrated Silicon Solution Inc | 7.9251 |
Min: 1 Mult: 1 |
0.00000000 | 8 Weeks | Surface Mount | Tray | Active | 3 (168 Hours) | 60 | 1.8V | 1 | 10.5mm | ROHS3 Compliant | No | 60 | AUTO/SELF REFRESH | 60-TFBGA | 512 Mb | Surface Mount | -40°C~85°C TA | SDRAM - DDR2 | 120mA | 1.2mm | 1 | 250mA | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | BOTTOM | 1.8V | 0.8mm | 1.7V | 1.9V | 3-STATE | 450ps | 512Mb 64M x 8 | Volatile | 16b | 1.7V~1.9V | 64MX8 | 8 | 8b | 333MHz | 0.011A | COMMON | 8192 | DRAM | Parallel | 15ns | 48 | 48 |
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