Items : %s%s
Memory
Contact Plating
- Tin
ECCN Code
- 3A991.B.1.A
- EAR99
Factory Lead Time
- 11 Weeks
- 4 Weeks
- 5 Weeks
- 6 Weeks
- 7 Weeks
- 8 Weeks
JESD-609 Code
- e3
- e4
Manufacturer Package Identifier
- 24AA256-I/P
Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- 1 (Unlimited)
- 3 (168 Hours)
Mount
- Surface Mount
- Through Hole
Mounting Type
- Surface Mount
- Through Hole
Number of Pins
- 28
- 3
- 32
- 5
- 8
Number of Terminations
- 28
- 3
- 32
- 5
- 8
Operating Temperature
- -40°C~85°C TA
- 0°C~70°C TA
Package / Case
- 28-DIP (0.600, 15.24mm)
- 32-DIP (0.600, 15.24mm)
- 32-LCC (J-Lead)
- 32-TFSOP (0.488, 12.40mm Width)
- 8-DIP (0.300, 7.62mm)
- 8-SOIC (0.154, 3.90mm Width)
- 8-SOIC (0.209, 5.30mm Width)
- 8-TSSOP, 8-MSOP (0.118, 3.00mm Width)
- SC-74A, SOT-753
- TO-226-3, TO-92-3 (TO-226AA)
Packaging
- Bulk
- Tape & Reel (TR)
- Tray
- Tube
Part Status
- Active
- Obsolete
Pbfree Code
- yes
Published
- 1995
- 1997
- 2000
- 2002
- 2003
- 2004
- 2005
- 2007
- 2008
- 2009
- 2013
Series
- MoBL®
- SST39 MPF™
Surface Mount
- NO
- YES
Terminal Finish
- Matte Tin (Sn)
- Matte Tin (Sn) - annealed
- Nickel/Palladium/Gold (Ni/Pd/Au)
Termination
- SMD/SMT
- Through Hole
Weight
- 453.59237mg
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Datasheet | Factory Lead Time | Packaging | Published | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | Operating Supply Voltage | Number of Ports | Length | RoHS Status | Lead Free | Radiation Hardening | Number of Pins | Additional Feature | Package / Case | REACH SVHC | Density | Width | Mounting Type | Operating Temperature | Technology | Operating Mode | Height Seated (Max) | HTS Code | Number of Functions | Terminal Position | Peak Reflow Temperature (Cel) | Supply Voltage | Time@Peak Reflow Temperature-Max (s) | Pin Count | Surface Mount | Terminal Pitch | JESD-30 Code | Supply Voltage-Min (Vsup) | Qualification Status | Power Supplies | Supply Voltage-Max (Vsup) | Output Characteristics | Access Time | Screening Level | Memory Size | Memory Type | Address Bus Width | Supply Current-Max | Voltage - Supply | Organization | Memory Width | Memory Density | Parallel/Serial | Clock Frequency | Standby Current-Max | Access Time (Max) | Data Retention Time-Min | Endurance | Write Protection | I/O Type | Programming Voltage | Serial Bus Type | Refresh Cycles | Access Mode | Standby Voltage-Min | Memory Format | Memory Interface | Write Cycle Time - Word, Page | Sequential Burst Length | Interleaved Burst Length | Boot Block |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
MT49H32M18SJ-25E:B TR | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 9 Weeks | Tape & Reel (TR) | 2015 | Active | 3 (168 Hours) | ROHS3 Compliant | 144-TFBGA | Surface Mount | 0°C~95°C TC | 15ns | 576Mb 32M x 18 | Volatile | 1.7V~1.9V | 400MHz | DRAM | Parallel | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
GD25VE32CVIGR | GigaDevice Semiconductor (HK) Limited | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tape & Reel (TR) | Discontinued | 3 (168 Hours) | ROHS3 Compliant | 8-SOIC (0.209, 5.30mm Width) | Surface Mount | -40°C~85°C TA | FLASH - NOR | 32Mb 4M x 8 | Non-Volatile | 2.1V~3.6V | 104MHz | FLASH | SPI - Quad I/O | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
GD25Q127CSIGR | GigaDevice Semiconductor (HK) Limited | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 4 Weeks | Tape & Reel (TR) | 2016 | Active | 3 (168 Hours) | ROHS3 Compliant | 8-SOIC (0.209, 5.30mm Width) | Surface Mount | -40°C~85°C TA | FLASH - NOR | 128Mb 16M x 8 | Non-Volatile | 2.7V~3.6V | 104MHz | FLASH | SPI - Quad I/O | 12μs, 2.4ms | |||||||||||||||||||||||||||||||||||||||||||||||||||||
|
GD25VQ80CTIG | GigaDevice Semiconductor (HK) Limited | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 6 Weeks | Tube | Active | 3 (168 Hours) | ROHS3 Compliant | 8-SOIC (0.154, 3.90mm Width) | Surface Mount | -40°C~85°C TA | FLASH - NOR | 8Mb 1M x 8 | Non-Volatile | 2.3V~3.6V | 104MHz | FLASH | SPI - Quad I/O | 50μs, 3ms | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
GD5F4GQ4RCYIGR | GigaDevice Semiconductor (HK) Limited | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 10 Weeks | Tape & Reel (TR) | Active | 3 (168 Hours) | ROHS3 Compliant | 8-WDFN Exposed Pad | Surface Mount | -40°C~85°C TA | FLASH - NAND | 4Gb 512M x 8 | Non-Volatile | 1.7V~2V | 120MHz | FLASH | SPI - Quad I/O | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
GD25S512MDFIGR | GigaDevice Semiconductor (HK) Limited | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 4 Weeks | Tape & Reel (TR) | Active | 3 (168 Hours) | ROHS3 Compliant | 16-SOIC (0.295, 7.50mm Width) | Surface Mount | -40°C~85°C TA | FLASH - NOR | 512Mb 64M x 8 | Non-Volatile | 2.7V~3.6V | 104MHz | FLASH | SPI - Quad I/O | 50μs, 2.4ms | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
GD5F2GQ4UEYIGR | GigaDevice Semiconductor (HK) Limited | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 6 Weeks | Tape & Reel (TR) | Active | 3 (168 Hours) | ROHS3 Compliant | 8-WDFN Exposed Pad | Surface Mount | -40°C~85°C TA | FLASH - NAND | 2Gb 256M x 8 | Non-Volatile | 2.7V~3.6V | 120MHz | FLASH | SPI - Quad I/O | 700μs | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
GD25Q40CSIGR | GigaDevice Semiconductor (HK) Limited | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 4 Weeks | Tape & Reel (TR) | Active | 3 (168 Hours) | ROHS3 Compliant | 8-SOIC (0.209, 5.30mm Width) | Surface Mount | -40°C~85°C TA | FLASH - NOR | 4Mb 512K x 8 | Non-Volatile | 2.7V~3.6V | 104MHz | FLASH | SPI - Quad I/O | 50μs, 2.4ms | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
GD5F2GQ4UEYIGY | GigaDevice Semiconductor (HK) Limited | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 6 Weeks | Tray | Active | 3 (168 Hours) | ROHS3 Compliant | 8-WDFN Exposed Pad | Surface Mount | -40°C~85°C TA | FLASH - NAND | 2Gb 256M x 8 | Non-Volatile | 2.7V~3.6V | 120MHz | FLASH | SPI - Quad I/O | 700μs | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
AS4C128M8D2-25BCNTR | Alliance Memory, Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 8 Weeks | Tape & Reel (TR) | 2013 | Active | 3 (168 Hours) | 60 | 1.8V | ROHS3 Compliant | Lead Free | 60 | 60-TFBGA | 1 Gb | Surface Mount | 0°C~85°C TC | SDRAM - DDR2 | BOTTOM | 1.8V | YES | 0.8mm | Not Qualified | 3-STATE | 400ps | 1Gb 128M x 8 | Volatile | 14b | 0.25mA | 1.7V~1.9V | 128MX8 | 8 | 400MHz | COMMON | 8192 | DRAM | Parallel | 15ns | 48 | 48 | |||||||||||||||||||||||||||||||||
|
GD5F1GQ4UEYIGR | GigaDevice Semiconductor (HK) Limited | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 4 Weeks | Tape & Reel (TR) | Active | 3 (168 Hours) | ROHS3 Compliant | 8-WDFN Exposed Pad | Surface Mount | -40°C~85°C TA | FLASH - NAND | 1Gb 128M x 8 | Non-Volatile | 2.7V~3.6V | 120MHz | FLASH | SPI - Quad I/O | 700μs | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
GD5F2GQ4UF9IGR | GigaDevice Semiconductor (HK) Limited | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 2 Weeks | Tape & Reel (TR) | Active | 3 (168 Hours) | ROHS3 Compliant | 8-VLGA Exposed Pad | Surface Mount | -40°C~85°C TA | FLASH - NAND | 2Gb 256M x 8 | Non-Volatile | 2.7V~3.6V | 120MHz | FLASH | SPI - Quad I/O | 700μs | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
GD5F4GQ4RBYIGR | GigaDevice Semiconductor (HK) Limited | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 10 Weeks | Tape & Reel (TR) | Active | 3 (168 Hours) | ROHS3 Compliant | 8-WDFN Exposed Pad | Surface Mount | -40°C~85°C TA | FLASH - NAND | 4Gb 512M x 8 | Non-Volatile | 1.7V~2V | 120MHz | FLASH | SPI - Quad I/O | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
.png "IS61WV12824-8BI") |
IS61WV12824-8BI | ISSI, Integrated Silicon Solution Inc | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tray | Last Time Buy | 3 (168 Hours) | 119 | 22mm | 119-BBGA | 14mm | Surface Mount | -40°C~85°C TA | SRAM - Asynchronous | 3.5mm | 8542.32.00.41 | 1 | BOTTOM | 3.3V | YES | 1.27mm | R-PBGA-B119 | 3.135V | 3.465V | 3Mb 128K x 24 | Volatile | 3.135V~3.465V | 128KX24 | 24 | 3145728 bit | 8 ns | SRAM | Parallel | 8ns | ||||||||||||||||||||||||||||||||||||||||
|
GD25Q32CTIG | GigaDevice Semiconductor (HK) Limited | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 4 Weeks | Tube | Active | 3 (168 Hours) | 8 | 4.9mm | ROHS3 Compliant | 8-SOIC (0.154, 3.90mm Width) | 3.9mm | Surface Mount | -40°C~85°C TA | FLASH - NOR | SYNCHRONOUS | 1.75mm | 1 | DUAL | 3.3V | YES | 1.27mm | R-PDSO-G8 | 2.7V | 3.6V | 32Mb 4M x 8 | Non-Volatile | 0.025mA | 2.7V~3.6V | 32MX1 | 1 | 33554432 bit | SERIAL | 120MHz | 0.000005A | 20 | 100000 Write/Erase Cycles | HARDWARE/SOFTWARE | 2.7V | SPI | FLASH | SPI - Quad I/O | 50μs, 2.4ms | BOTTOM/TOP | |||||||||||||||||||||||||||||
|
GD25VE40CSIG | GigaDevice Semiconductor (HK) Limited | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 6 Weeks | Tube | Active | 3 (168 Hours) | ROHS3 Compliant | 8-SOIC (0.209, 5.30mm Width) | Surface Mount | -40°C~85°C TA | FLASH - NOR | 4Mb 512K x 8 | Non-Volatile | 2.1V~3.6V | 104MHz | FLASH | SPI - Quad I/O | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
GD25Q16CSJG | GigaDevice Semiconductor (HK) Limited | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 6 Weeks | Tube | Active | 3 (168 Hours) | ROHS3 Compliant | 8-SOIC (0.209, 5.30mm Width) | Surface Mount | -40°C~105°C TA | FLASH - NOR | 16Mb 2M x 8 | Non-Volatile | 2.7V~3.6V | 120MHz | FLASH | SPI - Quad I/O | 50μs, 2.4ms | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
GD5F2GQ4UFYIGY | GigaDevice Semiconductor (HK) Limited | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 6 Weeks | Tray | Active | 3 (168 Hours) | ROHS3 Compliant | 8-WDFN Exposed Pad | Surface Mount | -40°C~85°C TA | FLASH - NAND | 2Gb 256M x 8 | Non-Volatile | 2.7V~3.6V | 120MHz | FLASH | SPI - Quad I/O | 700μs | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
GD25LQ20COIGR | GigaDevice Semiconductor (HK) Limited | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 4 Weeks | Tape & Reel (TR) | Active | 3 (168 Hours) | ROHS3 Compliant | 8-TSSOP (0.173, 4.40mm Width) | Surface Mount | -40°C~85°C TA | FLASH - NOR | 2Mb 256K x 8 | Non-Volatile | 1.65V~2.1V | 104MHz | FLASH | SPI - Quad I/O | 50μs, 2.4ms | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
GD25Q80CEIGR | GigaDevice Semiconductor (HK) Limited | 0.5161 |
Min: 1 Mult: 1 |
0.00000000 | download | 4 Weeks | Tape & Reel (TR) | Active | 3 (168 Hours) | 8 | 3mm | ROHS3 Compliant | 8-XFDFN Exposed Pad | 2mm | Surface Mount | -40°C~85°C TA | FLASH - NOR | SYNCHRONOUS | 0.5mm | 1 | DUAL | NOT SPECIFIED | 3.3V | NOT SPECIFIED | YES | 0.5mm | R-PDSO-N8 | 2.7V | 3.6V | 8Mb 1M x 8 | Non-Volatile | 2.7V~3.6V | 8MX1 | 1 | 8388608 bit | SERIAL | 120MHz | 3.3V | FLASH | SPI - Quad I/O | 50μs, 2.4ms | ||||||||||||||||||||||||||||||||||
 |
MT29F64G08CBCDBJ4-6ITR:D TR | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tape & Reel (TR) | Obsolete | 3 (168 Hours) | ROHS3 Compliant | 132-VBGA | Surface Mount | -40°C~85°C TA | FLASH - NAND | 64Gb 8G x 8 | Non-Volatile | 2.7V~3.6V | 167MHz | FLASH | Parallel | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
GD25LE128DLIGR | GigaDevice Semiconductor (HK) Limited | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 6 Weeks | Tape & Reel (TR) | Active | 3 (168 Hours) | ROHS3 Compliant | 21-XFBGA, WLSCP | Surface Mount | -40°C~85°C TA | FLASH - NOR | 128Mb 16M x 8 | Non-Volatile | 1.65V~2V | 120MHz | FLASH | SPI - Quad I/O | 2.4ms | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
GD25LQ256DWIGR | GigaDevice Semiconductor (HK) Limited | 10.3307 |
Min: 1 Mult: 1 |
0.00000000 | download | 4 Weeks | Tape & Reel (TR) | Active | 3 (168 Hours) | ROHS3 Compliant | 8-WDFN Exposed Pad | Surface Mount | -40°C~85°C TA | FLASH - NOR | 256Mb 32M x 8 | Non-Volatile | 1.65V~2V | 120MHz | FLASH | SPI - Quad I/O | 2.4ms | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
GD25LQ80CTIGR | GigaDevice Semiconductor (HK) Limited | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 4 Weeks | Tape & Reel (TR) | Active | 3 (168 Hours) | ROHS3 Compliant | 8-SOIC (0.154, 3.90mm Width) | Surface Mount | -40°C~85°C TA | FLASH - NOR | 8Mb 1M x 8 | Non-Volatile | 1.65V~2.1V | 104MHz | FLASH | SPI - Quad I/O | 50μs, 2.4ms | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
AS6C4008-55BIN | Alliance Memory, Inc. | 4.9802 |
Min: 1 Mult: 1 |
0.00000000 | download | 8 Weeks | Tray | 2009 | yes | Active | 3 (168 Hours) | 36 | 3V | 1 | 8mm | ROHS3 Compliant | No | 36 | 36-TFBGA | No SVHC | 4 Mb | Surface Mount | -40°C~85°C TA | SRAM - Asynchronous | 1 | BOTTOM | 260 | 3V | 40 | 36 | YES | 0.75mm | 2.7V | 3/5V | 5.5V | 3-STATE | 4Mb 512K x 8 | Volatile | 19b | 0.06mA | 2.7V~5.5V | 8 | 0.00003A | 55 ns | COMMON | 2V | SRAM | Parallel | 55ns | ||||||||||||||||||||||||||
|
GD25Q40CEJGR | GigaDevice Semiconductor (HK) Limited | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 4 Weeks | Tape & Reel (TR) | Active | 3 (168 Hours) | 8-XFDFN Exposed Pad | Surface Mount | -40°C~105°C TA | FLASH - NOR | 4Mb 512K x 8 | Non-Volatile | 2.7V~3.6V | 80MHz | FLASH | SPI - Quad I/O | 50μs, 2.4ms | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
GD25Q127CZIGY | GigaDevice Semiconductor (HK) Limited | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 6 Weeks | Tray | Active | 3 (168 Hours) | ROHS3 Compliant | 24-TBGA | Surface Mount | -40°C~85°C TA | FLASH - NOR | 128Mb 16M x 8 | Non-Volatile | 2.7V~3.6V | 104MHz | FLASH | SPI - Quad I/O | 12μs, 2.4ms | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
GD25Q127CFIG | GigaDevice Semiconductor (HK) Limited | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 4 Weeks | Tube | Active | 3 (168 Hours) | ROHS3 Compliant | 16-SOIC (0.295, 7.50mm Width) | Surface Mount | -40°C~85°C TA | FLASH - NOR | 128Mb 16M x 8 | Non-Volatile | 2.7V~3.6V | 104MHz | FLASH | SPI - Quad I/O | 12μs, 2.4ms | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
GD25LQ40CEIGR | GigaDevice Semiconductor (HK) Limited | 0.4864 |
Min: 1 Mult: 1 |
0.00000000 | download | 4 Weeks | Tape & Reel (TR) | Active | 3 (168 Hours) | ROHS3 Compliant | 8-XFDFN Exposed Pad | Surface Mount | -40°C~85°C TA | FLASH - NOR | 4Mb 512K x 8 | Non-Volatile | 1.65V~2.1V | 104MHz | FLASH | SPI - Quad I/O | 50μs, 2.4ms | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
MT42L64M32D1TK-18 AAT:C | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tray | 2014 | Obsolete | 3 (168 Hours) | 134 | 1 | 11.5mm | ROHS3 Compliant | SELF REFRESH; IT ALSO REQUIRES 1.8V NOM | 134-WFBGA | 10mm | Surface Mount | -40°C~105°C TC | SDRAM - Mobile LPDDR2 | SYNCHRONOUS | 0.7mm | 1 | BOTTOM | 1.2V | YES | 0.65mm | R-PBGA-B134 | 1.14V | Not Qualified | 1.21.8V | 1.3V | 3-STATE | AEC-Q100 | 2Gb 64M x 32 | Volatile | 0.22mA | 1.14V~1.3V | 64MX32 | 32 | 2147483648 bit | 533MHz | 0.000025A | 5.5 ns | COMMON | 8192 | SINGLE BANK PAGE BURST | DRAM | Parallel | 4816 | 4816 |
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