Items : %s%s
Memory
Contact Plating
- Tin
ECCN Code
- 3A991.B.1.A
- EAR99
Factory Lead Time
- 11 Weeks
- 4 Weeks
- 5 Weeks
- 6 Weeks
- 7 Weeks
- 8 Weeks
JESD-609 Code
- e3
- e4
Manufacturer Package Identifier
- 24AA256-I/P
Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- 1 (Unlimited)
- 3 (168 Hours)
Mount
- Surface Mount
- Through Hole
Mounting Type
- Surface Mount
- Through Hole
Number of Pins
- 28
- 3
- 32
- 5
- 8
Number of Terminations
- 28
- 3
- 32
- 5
- 8
Operating Temperature
- -40°C~85°C TA
- 0°C~70°C TA
Package / Case
- 28-DIP (0.600, 15.24mm)
- 32-DIP (0.600, 15.24mm)
- 32-LCC (J-Lead)
- 32-TFSOP (0.488, 12.40mm Width)
- 8-DIP (0.300, 7.62mm)
- 8-SOIC (0.154, 3.90mm Width)
- 8-SOIC (0.209, 5.30mm Width)
- 8-TSSOP, 8-MSOP (0.118, 3.00mm Width)
- SC-74A, SOT-753
- TO-226-3, TO-92-3 (TO-226AA)
Packaging
- Bulk
- Tape & Reel (TR)
- Tray
- Tube
Part Status
- Active
- Obsolete
Pbfree Code
- yes
Published
- 1995
- 1997
- 2000
- 2002
- 2003
- 2004
- 2005
- 2007
- 2008
- 2009
- 2013
Series
- MoBL®
- SST39 MPF™
Surface Mount
- NO
- YES
Terminal Finish
- Matte Tin (Sn)
- Matte Tin (Sn) - annealed
- Nickel/Palladium/Gold (Ni/Pd/Au)
Termination
- SMD/SMT
- Through Hole
Weight
- 453.59237mg
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Datasheet | Factory Lead Time | Mount | Packaging | Published | Series | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | ECCN Code | Max Operating Temperature | Min Operating Temperature | Operating Supply Voltage | Number of Ports | Length | RoHS Status | Lead Free | Radiation Hardening | Number of Pins | Additional Feature | Package / Case | Interface | Max Supply Voltage | REACH SVHC | Reach Compliance Code | Min Supply Voltage | Density | Frequency | Height | Width | Thickness | Mounting Type | Operating Temperature | Technology | Operating Mode | Max Supply Current | Height Seated (Max) | HTS Code | Number of Functions | Nominal Supply Current | Type | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Supply Voltage | Time@Peak Reflow Temperature-Max (s) | Base Part Number | Pin Count | Temperature Grade | Surface Mount | Terminal Pitch | JESD-30 Code | Supply Voltage-Min (Vsup) | Operating Temperature (Max) | Operating Temperature (Min) | Subcategory | Qualification Status | Power Supplies | Supply Voltage-Max (Vsup) | Supplier Device Package | Output Characteristics | Access Time | Frequency (Max) | Memory Size | Memory Type | Address Bus Width | Supply Current-Max | Voltage - Supply | Organization | Memory Width | Memory Density | Memory IC Type | Sync/Async | Data Bus Width | Parallel/Serial | Clock Frequency | Standby Current-Max | Access Time (Max) | Word Size | Alternate Memory Width | Data Retention Time-Min | Endurance | Write Protection | I/O Type | Programming Voltage | Data Polling | Toggle Bit | Command User Interface | Number of Sectors/Size | Page Size | Ready/Busy | Common Flash Interface | Serial Bus Type | I2C Control Byte | Standby Voltage-Min | Memory Format | Memory Interface | Write Cycle Time - Word, Page | Sector Size | Boot Block |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IS61LV2568L-8TL | ISSI, Integrated Silicon Solution Inc | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tray | yes | Active | 3 (168 Hours) | 44 | 3.3V | 1 | ROHS3 Compliant | No | 44 | 44-TSOP (0.400, 10.16mm Width) | 2 Mb | Surface Mount | 0°C~70°C TA | SRAM - Asynchronous | 1 | 65mA | e3 | Matte Tin (Sn) - annealed | DUAL | 260 | 3.3V | 10 | 44 | YES | 0.8mm | 3.63V | 3-STATE | 2Mb 256K x 8 | Volatile | 18b | 3.135V~3.6V | 256KX8 | 8 | Asynchronous | 0.003A | 8 ns | 8b | COMMON | 3V | SRAM | Parallel | 8ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
NDT16PFJ-9MET | Insignis Technology Corporation | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 4 Weeks | Tape & Reel (TR) | Active | 3 (168 Hours) | ROHS3 Compliant | 96-VFBGA | Surface Mount | 0°C~95°C TC | SDRAM - DDR3 | 20ns | 1Gb 64M x 16 | Volatile | 1.425V~1.575V | 933MHz | DRAM | Parallel | 15ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
.png "MX69V28F64MBXLW") |
MX69V28F64MBXLW | Macronix | 3.2028 |
Min: 1 Mult: 1 |
0.00000000 | download | 12 Weeks | Tray | Active | 56 | 7.7mm | RoHS Compliant | IT IS ALSO HAVING 64MBIT PSRAM | 6.2mm | CMOS | SYNCHRONOUS | 1.05mm | 8542.32.00.71 | 1 | BOTTOM | BALL | 260 | 1.8V | 40 | OTHER | YES | 0.5mm | R-PBGA-B56 | 1.7V | 85°C | -25°C | 1.95V | 8MX16 | 16 | 134217728 bit | MEMORY CIRCUIT | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
71V3558S100PFGI8 | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 12 Weeks | Surface Mount | Tape & Reel | 2006 | yes | Active | 3 (168 Hours) | 100 | 85°C | -40°C | 3.3V | 1 | 20mm | RoHS Compliant | Lead Free | No | 100 | TQFP | Parallel | 3.465V | 3.135V | 4.5 Mb | 100MHz | 14mm | 1.4mm | CMOS | 1 | 255mA | e3 | Matte Tin (Sn) - annealed | QUAD | GULL WING | 260 | 3.3V | 30 | 100 | INDUSTRIAL | 0.65mm | SRAMs | 3-STATE | 5 ns | 100MHz | 512kB | RAM, SDR, SRAM | 18b | Synchronous | 0.045A | 18b | COMMON | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IS46DR16640C-3DBLA2-TR | ISSI, Integrated Silicon Solution Inc | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 8 Weeks | Tape & Reel (TR) | Active | 3 (168 Hours) | 84 | 1 | 12.5mm | ROHS3 Compliant | AUTO/SELF REFRESH | 84-TFBGA | 8mm | Surface Mount | -40°C~105°C TA | SDRAM - DDR2 | SYNCHRONOUS | 1.2mm | 1 | BOTTOM | NOT SPECIFIED | 1.8V | NOT SPECIFIED | YES | 0.8mm | R-PBGA-B84 | 1.7V | 1.9V | 450ps | 1Gb 64M x 16 | Volatile | 1.7V~1.9V | 64MX16 | 16 | 1073741824 bit | 333MHz | DRAM | Parallel | 15ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
MT25QL128ABA8E14-1SIT | Micron | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 24 | 3A991.B.1.A | 85°C | -40°C | 3V | 8mm | RoHS Compliant | 24 | SPI, Serial | 128 Mb | 6mm | CMOS | SYNCHRONOUS | 1.2mm | 8542.32.00.51 | 1 | BOTTOM | BALL | 3V | INDUSTRIAL | YES | 1mm | 2.7V | 3.6V | NOR | 0.035mA | 16MX8 | 8 | 133MHz | 0.00005A | 20 | 100000 Write/Erase Cycles | HARDWARE/SOFTWARE | 3V | 256B | SPI | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
NDL26PFG-8KIT | Insignis Technology Corporation | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 4 Weeks | Tape & Reel (TR) | Active | 3 (168 Hours) | ROHS3 Compliant | 96-TFBGA | Surface Mount | -40°C~95°C TC | SDRAM - DDR3L | 20ns | 2Gb 128M x 16 | Volatile | 1.283V~1.45V | 800MHz | DRAM | Parallel | 15ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
EM6HE08EW3F-12H | Etron Technology, Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 4 Weeks | Tape & Reel (TR) | Active | 3 (168 Hours) | ROHS3 Compliant | 78-TFBGA | Surface Mount | 0°C~95°C TC | SDRAM - DDR3L | 20ns | 4Gb 512M x 8 | Volatile | 1.283V~1.45V | 800MHz | DRAM | Parallel | 15ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
PCA24S08D/DG,118 | NXP USA Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tape & Reel (TR) | 2010 | Obsolete | 1 (Unlimited) | ROHS3 Compliant | 8-SOIC (0.154, 3.90mm Width) | Surface Mount | -40°C~85°C TA | PCA24S08 | 8Kb 1K x 8 | Non-Volatile | 2.5V~3.6V | 400kHz | EEPROM | I2C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IDT71P79804S250BQG | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 2008 | 70°C | 0°C | RoHS Compliant | 165 | Parallel | 250MHz | DDR, RAM, SRAM | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
AS7C31025B-10JCN | Alliance Memory, Inc. | 3.2124 |
Min: 1 Mult: 1 |
0.00000000 | download | 8 Weeks | Tube | 2003 | Active | 3 (168 Hours) | 70°C | 0°C | 3.3V | 1 | ROHS3 Compliant | No | 32 | 32-BSOJ (0.400, 10.16mm Width) | Parallel | 3.6V | 3V | 1 Mb | Surface Mount | 0°C~70°C TA | SRAM - Asynchronous | 32-SOJ | 10ns | 1Mb 128K x 8 | Volatile | 17b | 3V~3.6V | SRAM | Parallel | 10ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
SST39LF801C-55-4C-B3KE-T | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Surface Mount | Tape & Reel (TR) | 2011 | SST39 MPF™ | Active | 3 (168 Hours) | 48 | 3.3V | ROHS3 Compliant | No | 48 | 48-TFBGA | 8 Mb | Surface Mount | 0°C~70°C TA | CMOS | 18mA | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | BOTTOM | 3.3V | SST39LF801 | 0.8mm | 55ns | 8Mb 512K x 16 | Non-Volatile | 19b | 3V~3.6V | 512KX16 | 16 | Asynchronous | 16b | 0.00002A | 16b | YES | YES | YES | 256 | YES | YES | FLASH | Parallel | 10μs | 2K | BOTTOM | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
DS1270W-150 | Maxim Integrated | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tube | 2010 | Obsolete | 1 (Unlimited) | 36 | 3A991.B.2.A | Non-RoHS Compliant | Contains Lead | 36-DIP Module (0.600, 15.24mm) | Through Hole | 0°C~70°C TA | NVSRAM (Non-Volatile SRAM) | ASYNCHRONOUS | 8473.30.11.40 | 1 | e0 | TIN LEAD | DUAL | 240 | 3.3V | NOT SPECIFIED | DS1270W | 36 | NO | R-XDMA-P36 | 3V | Not Qualified | 3.6V | 16Mb 2M x 8 | Non-Volatile | 3V~3.6V | 2MX8 | 8 | 16777216 bit | 150 ns | NVSRAM | Parallel | 150ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IS46LR16320C-6BLA1-TR | ISSI, Integrated Silicon Solution Inc | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 14 Weeks | Tape & Reel (TR) | Active | 3 (168 Hours) | 1.8V | ROHS3 Compliant | 60 | 60-TFBGA | Surface Mount | -40°C~85°C TA | SDRAM - Mobile LPDDR | 60mA | 5.5ns | 512Mb 32M x 16 | Volatile | 1.7V~1.95V | 16b | 166MHz | DRAM | Parallel | 15ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
EM6GE16EWAKG-10H | Etron Technology, Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 4 Weeks | Tape & Reel (TR) | Active | 3 (168 Hours) | ROHS3 Compliant | 96-TFBGA | Surface Mount | 0°C~95°C TC | SDRAM - DDR3 | 20ns | 4Gb 256M x 16 | Volatile | 1.425V~1.575V | 933MHz | DRAM | Parallel | 15ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
70V9079L12PF8 | Renesas Electronics America Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tape & Reel (TR) | Obsolete | 3 (168 Hours) | Non-RoHS Compliant | 100-LQFP | Surface Mount | 0°C~70°C TA | SRAM - Dual Port, Synchronous | IDT70V9079 | 12ns | 256Kb 32K x 8 | Volatile | 3V~3.6V | SRAM | Parallel | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
EM6HE16EWXD-10H | Etron Technology, Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tape & Reel (TR) | Not For New Designs | 3 (168 Hours) | 96-TFBGA | Surface Mount | 0°C~95°C TC | SDRAM - DDR3 | 20ns | 4Gb 256M x 16 | Volatile | 1.283V~1.45V | 933MHz | DRAM | Parallel | 15ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
PCA8581P/F6,112 | NXP USA Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tube | 1997 | Obsolete | 1 (Unlimited) | 8 | EAR99 | 9.5mm | ROHS3 Compliant | 10 YEAR OF DATA RETENTION | 8-DIP (0.300, 7.62mm) | 7.62mm | Through Hole | -25°C~85°C TA | CMOS | SYNCHRONOUS | 4.2mm | 8542.32.00.51 | 1 | e4 | NICKEL PALLADIUM GOLD | DUAL | NOT SPECIFIED | 5V | NOT SPECIFIED | PCA8581 | NO | 2.54mm | R-PDIP-T8 | 4.5V | Not Qualified | 5V | 5.5V | OPEN-DRAIN | 1Kb 128 x 8 | Non-Volatile | 0.001mA | 4.5V~5.5V | 128X8 | 8 | 1024 bit | SERIAL | 100kHz | 0.00001A | 10 | 10000 Write/Erase Cycles | 5V | I2C | 1010DDDR | EEPROM | I2C | 10ms | |||||||||||||||||||||||||||||||||||||||||||||||||||||
|
MX25L25639FZ4W-08G | Macronix | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 8 | 85°C | -25°C | 8mm | RoHS Compliant | SPI, Serial | 133MHz | 6mm | CMOS | SYNCHRONOUS | 0.8mm | 1 | DUAL | NO LEAD | NOT SPECIFIED | 3V | NOT SPECIFIED | 8 | OTHER | YES | 1.27mm | R-PDSO-N8 | 2.7V | Flash Memories | Not Qualified | 3/3.3V | 3.6V | FLASH, NOR | 0.025mA | 64MX4 | 4 | 268435456 bit | 0.00002A | 1 | 20 | 100000 Write/Erase Cycles | HARDWARE/SOFTWARE | 3V | SPI | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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AS7C34096A-12TIN | Alliance Memory, Inc. | 4.7923 |
Min: 1 Mult: 1 |
0.00000000 | download | 10 Weeks | Surface Mount | Tray | 2001 | Active | 3 (168 Hours) | 85°C | -40°C | 3.3V | 1 | 18.54mm | ROHS3 Compliant | Lead Free | No | 44 | 44-TSOP (0.400, 10.16mm Width) | Parallel | 3.6V | No SVHC | 3V | 4 Mb | 1.05mm | 10.29mm | Surface Mount | -40°C~85°C TA | SRAM - Asynchronous | 44-TSOP2 | 12ns | 4Mb 512K x 8 | Volatile | 19b | 3V~3.6V | SRAM | Parallel | 12ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
71342LA55PF8 | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Surface Mount | 2009 | no | Active | 3 (168 Hours) | 64 | EAR99 | 70°C | 0°C | 5V | 2 | 14mm | RoHS Compliant | Contains Lead | No | 64 | SEMAPHORE; AUTOMATIC POWER-DOWN; BATTERY BACKUP | TQFP | Parallel | 5.5V | 4.5V | 32 kb | 14mm | 1.4mm | CMOS | 1.6mm | 1 | 200mA | e0 | Tin/Lead (Sn85Pb15) | QUAD | GULL WING | 240 | 5V | 20 | 64 | COMMERCIAL | 0.8mm | SRAMs | 5V | 3-STATE | 55 ns | 4kB | RAM, SDR, SRAM | 24b | 4KX8 | Asynchronous | 0.0015A | 8b | COMMON | 2V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
AS7C4096A-12JINTR | Alliance Memory, Inc. | 4.7992 |
Min: 1 Mult: 1 |
0.00000000 | download | 8 Weeks | Tape & Reel (TR) | 2001 | yes | Active | 3 (168 Hours) | 36 | 5V | 23.495mm | ROHS3 Compliant | Lead Free | 36 | 36-BSOJ (0.400, 10.16mm Width) | 4 Mb | 10.16mm | Surface Mount | -40°C~85°C TA | SRAM - Asynchronous | 3.7592mm | 1 | DUAL | NOT SPECIFIED | 5V | NOT SPECIFIED | 36 | YES | 1.27mm | 4Mb 512K x 8 | Volatile | 4.5V~5.5V | 512KX8 | 8 | 12 ns | SRAM | Parallel | 12ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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AS7C38096A-10TIN | Alliance Memory, Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 10 Weeks | Surface Mount | Tray | 2012 | Active | 3 (168 Hours) | 85°C | -40°C | 3.3V | 1 | 18.62mm | ROHS3 Compliant | Lead Free | No | 44 | 44-TSOP (0.400, 10.16mm Width) | Parallel | 3.6V | 2.7V | 8 Mb | 1MHz | 1.05mm | 10.363mm | Surface Mount | -40°C~85°C TA | SRAM - Asynchronous | 44-TSOP2 | 10ns | 8Mb 1M x 8 | Volatile | 20b | 3V~3.6V | SRAM | Parallel | 10ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
AS4C2M32D1A-5BCN | Alliance Memory, Inc. | 3.2410 |
Min: 1 Mult: 1 |
0.00000000 | download | 8 Weeks | Tray | 2015 | Active | 3 (168 Hours) | 144 | EAR99 | 1 | 12mm | Non-RoHS Compliant | AUTO/SELF REFRESH | 144-LFBGA | 12mm | Surface Mount | 0°C~70°C TA | SDRAM - DDR | SYNCHRONOUS | 1.4mm | 1 | BOTTOM | NOT SPECIFIED | 2.5V | NOT SPECIFIED | YES | 0.8mm | S-PBGA-B144 | 2.3V | 2.7V | 700ps | 64Mb 2M x 32 | Volatile | 2.3V~2.7V | 2MX32 | 32 | 67108864 bit | 200MHz | DRAM | Parallel | 15ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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M58WR064KT70ZB6F TR | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 10 Weeks | Tape & Reel (TR) | 2011 | Active | 3 (168 Hours) | ROHS3 Compliant | 56-VFBGA | Surface Mount | -40°C~85°C TA | FLASH - NOR | M58WR064 | 64Mb 4M x 16 | Non-Volatile | 1.7V~2V | 66MHz | FLASH | Parallel | 70ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
MX25L3273EPI-10G | Macronix | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tube | MXSMIO™ | Obsolete | 1 (Unlimited) | 8-DIP (0.300, 7.62mm) | Through Hole | -40°C~85°C TA | FLASH - NOR | 8-PDIP | 32Mb 8M x 4 | Non-Volatile | 2.7V~3.6V | 104MHz | FLASH | SPI | 50μs, 3ms | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
MX29F800CBXEI-70G | Macronix | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 10 Weeks | Tray | Active | 48 | EAR99 | 8mm | Non-RoHS Compliant | Lead Free | BOTTOM BOOT BLOCK | 6mm | CMOS | ASYNCHRONOUS | 1.3mm | 8542.32.00.51 | 1 | NOR TYPE | BOTTOM | BALL | NOT SPECIFIED | 5V | NOT SPECIFIED | 48 | INDUSTRIAL | YES | 0.8mm | R-PBGA-B48 | 4.5V | 85°C | -40°C | Flash Memories | Not Qualified | 5V | 5.5V | 0.05mA | 512KX16 | 16 | 8388608 bit | FLASH | PARALLEL | 0.00005A | 70 ns | 8 | 100000 Write/Erase Cycles | 5V | YES | YES | YES | 12115 | YES | 16K8K32K64K | BOTTOM | |||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
EM63A165BM-5IH | Etron Technology, Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 4 Weeks | Tape & Reel (TR) | Active | 3 (168 Hours) | 54 | EAR99 | 1 | 8mm | RoHS Compliant | AUTO/SELF REFRESH | 54-TFBGA | compliant | 8mm | Surface Mount | -40°C~85°C TA | SDRAM | SYNCHRONOUS | 1.2mm | 8542.32.00.24 | 1 | BOTTOM | NOT SPECIFIED | 3.3V | NOT SPECIFIED | YES | 0.8mm | S-PBGA-B54 | 3V | 3.6V | 4.5ns | 256Mb 16M x 16 | Volatile | 3V~3.6V | 16MX16 | 16 | 268435456 bit | 200MHz | DRAM | Parallel | 10ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
70V24S55J | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Surface Mount | 2004 | no | Active | 1 (Unlimited) | 84 | EAR99 | 70°C | 0°C | 3.3V | 2 | 29.21mm | RoHS Compliant | Contains Lead | No | 84 | INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN | PLCC | Parallel | 3.6V | 3V | 64 kb | 29.21mm | 3.63mm | CMOS | 1 | 180mA | e0 | Tin/Lead (Sn85Pb15) | QUAD | J BEND | 225 | 3.3V | 84 | COMMERCIAL | SRAMs | 3-STATE | 55 ns | 8kB | RAM, SDR, SRAM | 24b | 4KX16 | Asynchronous | 0.005A | 16b | COMMON | 3V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IS61LF51236A-7.5B3LI | ISSI, Integrated Silicon Solution Inc | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tray | yes | Obsolete | 3 (168 Hours) | 165 | 3A991.B.2.A | 3.3V | 4 | 15mm | RoHS Compliant | 165 | PIPELINED ARCHITECTURE, FLOW-THROUGH | 165-TBGA | 18 Mb | Surface Mount | -40°C~85°C TA | SRAM - Synchronous, SDR | 1.2mm | 1 | 250mA | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | BOTTOM | 260 | 3.3V | 40 | 165 | YES | 1mm | 3.135V | Not Qualified | 3-STATE | 7.5ns | 18Mb 512K x 36 | Volatile | 19b | 3.135V~3.465V | 512KX36 | 36 | Synchronous | 117MHz | 0.075A | 36b | COMMON | SRAM | Parallel |
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IS61LV2568L-8TL ISSI, Integrated Silicon Solution Inc
44 Pin Memory IC 2 Mb kb 65mA mA 8b b
Price: 0.0000
RFQ -
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71V3558S100PFGI8 Integrated Device Technology (IDT)
Surface Mount 100 Pin Memory IC 4.5 Mb kb 20mm mm 255mA mA 18b b
Price: 0.0000
RFQ -
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SST39LF801C-55-4C-B3KE-T Microchip Technology
Surface Mount SST39 MPF™ Memory IC SST39 MPF™ Series SST39LF801 8 Mb kb 18mA mA 16b b
Price: 0.0000
RFQ -
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71342LA55PF8 Integrated Device Technology (IDT)
5V V Surface Mount 64 Pin Memory IC 32 kb kb 14mm mm 200mA mA 8b b
Price: 0.0000
RFQ -
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70V24S55J Integrated Device Technology (IDT)
Surface Mount 84 Pin Memory IC 64 kb kb 29.21mm mm 180mA mA 16b b
Price: 0.0000
RFQ -
IS61LF51236A-7.5B3LI ISSI, Integrated Silicon Solution Inc
165 Pin Memory IC 18 Mb kb 15mm mm 250mA mA 36b b
Price: 0.0000
RFQ
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