Items : %s%s
Memory
Contact Plating
- Tin
ECCN Code
- 3A991.B.1.A
- EAR99
Factory Lead Time
- 11 Weeks
- 4 Weeks
- 5 Weeks
- 6 Weeks
- 7 Weeks
- 8 Weeks
JESD-609 Code
- e3
- e4
Manufacturer Package Identifier
- 24AA256-I/P
Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- 1 (Unlimited)
- 3 (168 Hours)
Mount
- Surface Mount
- Through Hole
Mounting Type
- Surface Mount
- Through Hole
Number of Pins
- 28
- 3
- 32
- 5
- 8
Number of Terminations
- 28
- 3
- 32
- 5
- 8
Operating Temperature
- -40°C~85°C TA
- 0°C~70°C TA
Package / Case
- 28-DIP (0.600, 15.24mm)
- 32-DIP (0.600, 15.24mm)
- 32-LCC (J-Lead)
- 32-TFSOP (0.488, 12.40mm Width)
- 8-DIP (0.300, 7.62mm)
- 8-SOIC (0.154, 3.90mm Width)
- 8-SOIC (0.209, 5.30mm Width)
- 8-TSSOP, 8-MSOP (0.118, 3.00mm Width)
- SC-74A, SOT-753
- TO-226-3, TO-92-3 (TO-226AA)
Packaging
- Bulk
- Tape & Reel (TR)
- Tray
- Tube
Part Status
- Active
- Obsolete
Pbfree Code
- yes
Published
- 1995
- 1997
- 2000
- 2002
- 2003
- 2004
- 2005
- 2007
- 2008
- 2009
- 2013
Series
- MoBL®
- SST39 MPF™
Surface Mount
- NO
- YES
Terminal Finish
- Matte Tin (Sn)
- Matte Tin (Sn) - annealed
- Nickel/Palladium/Gold (Ni/Pd/Au)
Termination
- SMD/SMT
- Through Hole
Weight
- 453.59237mg
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Datasheet | Factory Lead Time | Mount | Packaging | Published | Series | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | ECCN Code | Max Operating Temperature | Min Operating Temperature | Operating Supply Voltage | Number of Ports | Length | RoHS Status | Lead Free | Radiation Hardening | Number of Pins | Additional Feature | Package / Case | Interface | Max Supply Voltage | Reach Compliance Code | Min Supply Voltage | Density | Frequency | Width | Thickness | Mounting Type | Operating Temperature | Technology | Operating Mode | Height Seated (Max) | HTS Code | Number of Functions | Nominal Supply Current | Max Frequency | Type | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Supply Voltage | Time@Peak Reflow Temperature-Max (s) | Base Part Number | Pin Count | Temperature Grade | Surface Mount | Terminal Pitch | JESD-30 Code | Supply Voltage-Min (Vsup) | Operating Temperature (Max) | Operating Temperature (Min) | Subcategory | Qualification Status | Power Supplies | Supply Voltage-Max (Vsup) | Supplier Device Package | Output Characteristics | Access Time | Frequency (Max) | Screening Level | Memory Size | Memory Type | Address Bus Width | Supply Current-Max | Voltage - Supply | Organization | Memory Width | Memory Density | Memory IC Type | Sync/Async | Data Bus Width | Parallel/Serial | Clock Frequency | Standby Current-Max | Access Time (Max) | Word Size | Alternate Memory Width | I/O Type | Programming Voltage | Standby Voltage-Min | Memory Format | Memory Interface | Write Cycle Time - Word, Page |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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70T3319S166BC8 | Renesas Electronics America Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 12 Weeks | Tape & Reel (TR) | Active | 3 (168 Hours) | Non-RoHS Compliant | 256-LBGA | Surface Mount | 0°C~70°C TA | SRAM - Dual Port, Synchronous | IDT70T3319 | 256-CABGA (17x17) | 3.6ns | 4.5Mb 256K x 18 | Volatile | 2.4V~2.6V | 166MHz | SRAM | Parallel | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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71V30S55TFG8 | Renesas Electronics America Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 12 Weeks | Tape & Reel (TR) | Active | 3 (168 Hours) | ROHS3 Compliant | 64-LQFP | Surface Mount | 0°C~70°C TA | SRAM - Dual Port, Asynchronous | IDT71V30 | 64-TQFP (10x10) | 55ns | 8Kb 1K x 8 | Volatile | 3V~3.6V | SRAM | Parallel | 55ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MX30UF2GE8AB-XKI | Macronix | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 8 Weeks | Tray | Active | 63 | 3A991.B.1.A | 11mm | RoHS Compliant | 9mm | CMOS | ASYNCHRONOUS | 1mm | 8542.32.00.51 | 1 | NAND TYPE | BOTTOM | BALL | 260 | 1.8V | 40 | INDUSTRIAL | YES | 0.8mm | R-PBGA-B63 | 1.7V | 85°C | -40°C | 1.95V | 256MX8 | 8 | 2147483648 bit | FLASH | PARALLEL | 1.8V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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7140LA35L48B | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 10 Weeks | Surface Mount | Bulk | 2013 | no | Active | 1 (Unlimited) | 48 | 125°C | -55°C | 5V | 2 | 14.2mm | RoHS Compliant | Contains Lead | No | 48 | LCC | Parallel | 5.5V | 4.5V | 8 kb | 14.22mm | 1.78mm | CMOS | 1 | 170mA | e0 | Tin/Lead (Sn/Pb) | QUAD | 240 | 5V | 48 | MILITARY | 1.016mm | SRAMs | 5V | 3-STATE | 35 ns | MIL-PRF-38535 | RAM, SRAM | 20b | 1KX8 | Asynchronous | 0.004A | 8b | COMMON | 2V | |||||||||||||||||||||||||||||||||||||||||
| S25FL128LAGMFM010 | Cypress Semiconductor Corp | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 13 Weeks | Tray | 2016 | Automotive, AEC-Q100, FL-L | Active | 3 (168 Hours) | 8 | 5.28mm | ROHS3 Compliant | IT IS ALSO CONFIGURED AS 128M X 1 | 8-SOIC (0.209, 5.30mm Width) | 5.28mm | Surface Mount | -40°C~125°C TA | FLASH - NOR | SYNCHRONOUS | 2.16mm | 8542.32.00.51 | 1 | DUAL | NOT SPECIFIED | 3V | NOT SPECIFIED | YES | 1.27mm | S-PDSO-G8 | 2.7V | 3.6V | 128Mb 16M x 8 | Non-Volatile | 2.7V~3.6V | 32MX4 | 4 | 134217728 bit | SERIAL | 133MHz | 2 | 3V | FLASH | SPI - Quad I/O, QPI | ||||||||||||||||||||||||||||||||||||||||||||||||||
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7164S25YGI | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | 2009 | yes | Active | 3 (168 Hours) | 28 | EAR99 | 85°C | -40°C | 5V | 1 | 17.9mm | RoHS Compliant | Lead Free | No | 28 | Parallel | 5.5V | 4.5V | 64 kb | 7.6mm | 2.67mm | CMOS | 3.556mm | 1 | e3 | Matte Tin (Sn) - annealed | DUAL | J BEND | 260 | 5V | 28 | INDUSTRIAL | YES | SRAMs | 5V | 3-STATE | 25 ns | 8kB | RAM, SDR, SRAM - Asynchronous | 13b | 8KX8 | COMMON | ||||||||||||||||||||||||||||||||||||||||||||||
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IDT71T016SA12BF | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Surface Mount | 2008 | 3 (168 Hours) | 48 | 70°C | 0°C | 2.5V | 1 | 7mm | Non-RoHS Compliant | 48 | Parallel | 2.7V | not_compliant | 2.375V | 1 Mb | CMOS | 1 | 150mA | e0 | Tin/Lead (Sn63Pb37) | BOTTOM | BALL | 225 | 2.5V | 20 | 48 | COMMERCIAL | 0.75mm | SRAMs | Not Qualified | 3-STATE | 12 ns | RAM, SRAM - Asynchronous | 16b | 16 | Asynchronous | 16b | COMMON | 2.38V | |||||||||||||||||||||||||||||||||||||||||||||||||
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7134LA20J8 | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Surface Mount | 2005 | no | Active | 3 (168 Hours) | 52 | EAR99 | 70°C | 0°C | 5V | 2 | 19mm | RoHS Compliant | Contains Lead | No | 52 | AUTOMATIC POWER-DOWN; BATTERY BACKUP | PLCC | Parallel | 5.5V | 4.5V | 32 kb | 19mm | 3.63mm | CMOS | 4.57mm | 1 | 240mA | e0 | Tin/Lead (Sn85Pb15) | QUAD | J BEND | 225 | 5V | 52 | COMMERCIAL | SRAMs | 5V | 3-STATE | 20 ns | 4kB | RAM, SDR, SRAM | 24b | 4KX8 | Asynchronous | 0.0015A | 8b | COMMON | 2V | |||||||||||||||||||||||||||||||||||||||
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71V67903S80PFGI8 | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 8 Weeks | Surface Mount | Tape & Reel | 2004 | yes | Active | 3 (168 Hours) | 100 | 85°C | -40°C | 3.3V | 1 | 20mm | RoHS Compliant | Lead Free | No | 100 | FLOW-THROUGH ARCHITECTURE | TQFP | Parallel | 3.465V | 3.135V | 9 Mb | 100MHz | 14mm | 1.4mm | CMOS | 1 | 230mA | e3 | Matte Tin (Sn) - annealed | QUAD | GULL WING | 260 | 3.3V | 30 | 100 | INDUSTRIAL | 0.65mm | SRAMs | 3-STATE | 8 ns | RAM, SRAM | 19b | Synchronous | 0.07A | 18b | COMMON | |||||||||||||||||||||||||||||||||||||||||
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70V659S10BC8 | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Surface Mount | Tape & Reel | 2009 | no | Active | 3 (168 Hours) | 256 | 70°C | 0°C | 3.3V | 2 | 17mm | RoHS Compliant | Contains Lead | No | 256 | Parallel | 3.45V | 3.15V | 4.5 Mb | 17mm | 1.4mm | CMOS | 1.5mm | 1 | 500mA | e0 | Tin/Lead (Sn63Pb37) | BOTTOM | BALL | 225 | 3.3V | 256 | COMMERCIAL | 1mm | SRAMs | 3-STATE | 10 ns | RAM, SRAM | 17b | Asynchronous | 0.015A | 36b | COMMON | ||||||||||||||||||||||||||||||||||||||||||||
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70T659S12BC8 | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 7 Weeks | Surface Mount | Tape & Reel | 2009 | no | Active | 3 (168 Hours) | 256 | 70°C | 0°C | 2.5V | 2 | 17mm | RoHS Compliant | Contains Lead | No | 256 | Parallel | 2.6V | 2.4V | 4.5 Mb | 17mm | 1.4mm | CMOS | 1.5mm | 1 | 355mA | e0 | Tin/Lead (Sn63Pb37) | BOTTOM | BALL | 225 | 2.5V | 20 | 256 | COMMERCIAL | 1mm | SRAMs | 3-STATE | 12 ns | RAM, SRAM | 17b | Asynchronous | 0.01A | 36b | COMMON | ||||||||||||||||||||||||||||||||||||||||||||
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IDT71V016SA20YI8 | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tape & Reel (TR) | 2007 | no | 3 (168 Hours) | 44 | 3A991.B.2.B | 85°C | -40°C | 28.575mm | Non-RoHS Compliant | 44 | ALSO OPERATES WITH 3V TO 3.6 V SUPPLY | Parallel | not_compliant | 10.16mm | CMOS | 3.683mm | 8542.32.00.41 | 1 | e0 | Tin/Lead (Sn85Pb15) | DUAL | J BEND | 225 | 3.3V | 30 | 44 | INDUSTRIAL | YES | 1.27mm | 3.15V | SRAMs | Not Qualified | 3.3V | 3.6V | 3-STATE | RAM, SRAM - Asynchronous | 0.12mA | 64KX16 | 16 | 1048576 bit | 0.01A | 20 ns | COMMON | 3.15V | ||||||||||||||||||||||||||||||||||||||||||||
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M25PX80-VMP6TGAD TR | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tape & Reel (TR) | Obsolete | 3 (168 Hours) | ROHS3 Compliant | 8-VDFN Exposed Pad | Surface Mount | -40°C~85°C TA | FLASH - NOR | 8-VFQFPN (6x5) | 8Mb 1M x 8 | Non-Volatile | 2.3V~3.6V | 75MHz | FLASH | SPI | 15ms, 5ms | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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CAT25C128LI-G | ON Semiconductor | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tube | 2008 | Obsolete | 1 (Unlimited) | 5V | RoHS Compliant | 8 | 8-DIP (0.300, 7.62mm) | SPI, Serial | unknown | Through Hole | -40°C~85°C TA | CAT25C128 | 250 ns | 128Kb 16K x 8 | Non-Volatile | 1.8V~5.5V | 5MHz | EEPROM | SPI | 5ms | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MT53D1024M32D4DT-046 WT:D | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tray | Active | 3 (168 Hours) | ROHS3 Compliant | 200-VFBGA | Surface Mount | -30°C~85°C TC | SDRAM - Mobile LPDDR4 | 32Gb 1G x 32 | Volatile | 1.1V | 2.133GHz | DRAM | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IDT71P79804S250BQG | Renesas Electronics America Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tray | Obsolete | 3 (168 Hours) | 165-TBGA | Surface Mount | 0°C~70°C TA | SRAM - Synchronous, DDR II | IDT71P79 | 165-CABGA (13x15) | 6.3ns | 18Mb 1M x 18 | Volatile | 1.7V~1.9V | 250MHz | SRAM | Parallel | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IS61WV25616BLL-10TL | ISSI, Integrated Silicon Solution Inc | 6.8853 |
Min: 1 Mult: 1 |
0.00000000 | download | 8 Weeks | Tray | yes | Active | 3 (168 Hours) | 44 | 1 | ROHS3 Compliant | No | 44 | 44-TSOP (0.400, 10.16mm Width) | 4 Mb | Surface Mount | 0°C~70°C TA | SRAM - Asynchronous | 1 | 40mA | 100MHz | e3 | Matte Tin (Sn) - annealed | DUAL | 260 | 3.3V | 40 | 44 | YES | 0.8mm | 2.4V | 2.5/3.3V | 3.6V | 3-STATE | 4Mb 256K x 16 | Volatile | 18b | 2.4V~3.6V | 16 | Asynchronous | 0.008A | 16b | COMMON | 2V | SRAM | Parallel | 10ns | ||||||||||||||||||||||||||||||||||||||||||||||
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71V3559S85PFG8 | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 12 Weeks | Surface Mount | 2009 | yes | Active | 3 (168 Hours) | 100 | 70°C | 0°C | 3.3V | 1 | 20mm | RoHS Compliant | Lead Free | No | 100 | TQFP | Parallel | 3.465V | 3.135V | 4.5 Mb | 91MHz | 14mm | 1.4mm | CMOS | 1 | 225mA | e3 | Matte Tin (Sn) - annealed | QUAD | GULL WING | 260 | 3.3V | 30 | 100 | COMMERCIAL | 0.65mm | SRAMs | 3-STATE | 8.5 ns | 100MHz | 512kB | RAM, SDR, SRAM | 18b | Synchronous | 0.04A | 18b | COMMON | |||||||||||||||||||||||||||||||||||||||||
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71V65603S133BQI | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 12 Weeks | Surface Mount | 2007 | no | Active | 3 (168 Hours) | 165 | 85°C | -40°C | 3.3V | 1 | 15mm | RoHS Compliant | Contains Lead | No | 165 | BURST COUNTER | Parallel | 3.465V | 3.135V | 9 Mb | 133MHz | 13mm | 1.2mm | CMOS | 1 | 320mA | e0 | Tin/Lead (Sn63Pb37) | BOTTOM | BALL | 225 | 3.3V | 20 | 165 | INDUSTRIAL | SRAMs | 3-STATE | 4.2 ns | 133MHz | 1.1MB | RAM, SDR, SRAM | 18b | 256KX36 | Synchronous | 0.06A | 36b | COMMON | |||||||||||||||||||||||||||||||||||||||||
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IDT71V65603S100PFI8 | Renesas Electronics America Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tape & Reel (TR) | Obsolete | 3 (168 Hours) | Non-RoHS Compliant | 100-LQFP | Surface Mount | -40°C~85°C TA | SRAM - Synchronous, SDR (ZBT) | IDT71V65603 | 5ns | 9Mb 256K x 36 | Volatile | 3.135V~3.465V | 100MHz | SRAM | Parallel | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IDT71V124SA20YG | Renesas Electronics America Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tube | Obsolete | 3 (168 Hours) | 32-BSOJ (0.400, 10.16mm Width) | Surface Mount | 0°C~70°C TA | SRAM - Asynchronous | IDT71V124 | 32-SOJ | 20ns | 1Mb 128K x 8 | Volatile | 3V~3.6V | SRAM | Parallel | 20ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| S29GL512T11FAIV13 | Cypress Semiconductor Corp | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 13 Weeks | Tape & Reel (TR) | GL-T | Active | 3 (168 Hours) | 64 | 13mm | Non-RoHS Compliant | 64-LBGA | 11mm | Surface Mount | -40°C~85°C TA | FLASH - NOR | ASYNCHRONOUS | 1.4mm | 8542.32.00.51 | 1 | BOTTOM | 3V | YES | 1mm | R-PBGA-B64 | 2.7V | 3.6V | 110ns | 512Mb 64M x 8 | Non-Volatile | 1.65V~3.6V | 32MX16 | 16 | 536870912 bit | 8 | 2.7V | FLASH | Parallel | 60ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
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TC58BVG0S3HBAI4 | Toshiba | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 131 Weeks | Surface Mount | 2012 | Active | 63 | 85°C | -40°C | 11mm | RoHS Compliant | 63 | TFBGA | Parallel | 3.6V | 2.7V | 9mm | CMOS | ASYNCHRONOUS | 1 | BOTTOM | BALL | 3.3V | INDUSTRIAL | 0.8mm | 120 μs | 128MB | EEPROM, NAND | 128MX8 | 1073741824 bit | 8b | 3.3V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MT53D1536M32D6BE-053 WT ES:D | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Box | Obsolete | 1 (Unlimited) | -30°C~85°C TC | SDRAM - Mobile LPDDR4 | 48Gb 1.5G x 32 | Volatile | 1.1V | 1866MHz | DRAM | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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70V06L20PF | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Surface Mount | 2008 | no | Active | 3 (168 Hours) | 64 | EAR99 | 70°C | 0°C | 3.3V | 2 | 14mm | RoHS Compliant | Contains Lead | No | 64 | TQFP | Parallel | 3.6V | 3V | 128 kb | 14mm | 1.4mm | CMOS | 1.6mm | 1 | 175mA | e0 | Tin/Lead (Sn85Pb15) | QUAD | GULL WING | 240 | 3.3V | 20 | 64 | COMMERCIAL | 0.8mm | SRAMs | 3-STATE | 20 ns | 16kB | RAM, SDR, SRAM | 14b | 16KX8 | Asynchronous | 8b | COMMON | 2V | ||||||||||||||||||||||||||||||||||||||||
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70T3599S133BFGI | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Surface Mount | 2009 | Active | 85°C | -40°C | 2.5V | 2 | 15mm | RoHS Compliant | Lead Free | No | 208 | Parallel | 2.6V | 2.4V | 4.5 Mb | 133MHz | 15mm | 1.4mm | 450mA | 15 ns | RAM, SRAM | 34b | Synchronous | 36b | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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7052L20G | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Through Hole | 2009 | Active | 70°C | 0°C | 5V | 4 | 30.48mm | RoHS Compliant | Contains Lead | No | 108 | Parallel | 5.5V | 4.5V | 16 kb | 30.48mm | 3.68mm | 250mA | 20 ns | RAM, SRAM | 11b | Asynchronous | 8b | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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70V35L20PF | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Bulk | 2008 | no | Active | 3 (168 Hours) | 100 | EAR99 | 70°C | 0°C | 3.3V | 2 | 14mm | RoHS Compliant | Contains Lead | No | 100 | TQFP | Parallel | 3.6V | 3V | 144 kb | 14mm | 1.4mm | CMOS | 1.6mm | 1 | e0 | Tin/Lead (Sn85Pb15) | QUAD | GULL WING | 240 | 3.3V | 20 | 100 | COMMERCIAL | YES | 0.5mm | SRAMs | 3-STATE | 20 ns | 18kB | RAM, SDR, SRAM | 26b | 0.175mA | 8KX18 | COMMON | 3V | |||||||||||||||||||||||||||||||||||||||||
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7005L17PF | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | 2012 | Active | 70°C | 0°C | 5V | 2 | 14mm | RoHS Compliant | Contains Lead | No | 64 | TQFP | Parallel | 5.5V | 4.5V | 64 kb | 14mm | 1.4mm | 17 ns | 8kB | RAM, SDR, SRAM | 26b | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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71V3558SA166BQGI8 | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 11 Weeks | Tape & Reel | 2015 | yes | Active | 3 (168 Hours) | 165 | 85°C | -40°C | 3.3V | 1 | 15mm | RoHS Compliant | Lead Free | No | 165 | Parallel | 4.5 Mb | 166MHz | 13mm | 1.2mm | CMOS | 1 | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | BOTTOM | BALL | 260 | 3.3V | 165 | INDUSTRIAL | YES | 3.465V | RAM, SRAM | 18b | 3.5 ns |
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7140LA35L48B Integrated Device Technology (IDT)
5V V Surface Mount 48 Pin Memory IC 8 kb kb 14.2mm mm 170mA mA 8b b
Price: 0.0000
RFQ -
S25FL128LAGMFM010 Cypress Semiconductor Corp
Automotive, AEC-Q100, FL-L Memory IC Automotive, AEC-Q100, FL-L Series 5.28mm mm
Price: 0.0000
RFQ -
7164S25YGI Integrated Device Technology (IDT)
5V V 28 Pin Memory IC 64 kb kb 17.9mm mm
Price: 0.0000
RFQ -
IDT71T016SA12BF Integrated Device Technology (IDT)
Surface Mount 48 Pin Memory IC 1 Mb kb 7mm mm 150mA mA 16b b
Price: 0.0000
RFQ -
7134LA20J8 Integrated Device Technology (IDT)
5V V Surface Mount 52 Pin Memory IC 32 kb kb 19mm mm 240mA mA 8b b
Price: 0.0000
RFQ -
71V67903S80PFGI8 Integrated Device Technology (IDT)
Surface Mount 100 Pin Memory IC 9 Mb kb 20mm mm 230mA mA 18b b
Price: 0.0000
RFQ -
70V659S10BC8 Integrated Device Technology (IDT)
Surface Mount 256 Pin Memory IC 4.5 Mb kb 17mm mm 500mA mA 36b b
Price: 0.0000
RFQ -
70T659S12BC8 Integrated Device Technology (IDT)
Surface Mount 256 Pin Memory IC 4.5 Mb kb 17mm mm 355mA mA 36b b
Price: 0.0000
RFQ -
IDT71V016SA20YI8 Integrated Device Technology (IDT)
3.3V V 44 Pin Memory IC 28.575mm mm
Price: 0.0000
RFQ -
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IS61WV25616BLL-10TL ISSI, Integrated Silicon Solution Inc
2.5/3.3V V 44 Pin Memory IC 4 Mb kb 40mA mA 16b b
Price: 6.8853
RFQ -
71V3559S85PFG8 Integrated Device Technology (IDT)
Surface Mount 100 Pin Memory IC 4.5 Mb kb 20mm mm 225mA mA 18b b
Price: 0.0000
RFQ -
71V65603S133BQI Integrated Device Technology (IDT)
Surface Mount 165 Pin Memory IC 9 Mb kb 15mm mm 320mA mA 36b b
Price: 0.0000
RFQ -
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70V06L20PF Integrated Device Technology (IDT)
Surface Mount 64 Pin Memory IC 128 kb kb 14mm mm 175mA mA 8b b
Price: 0.0000
RFQ -
70T3599S133BFGI Integrated Device Technology (IDT)
Surface Mount Memory IC 4.5 Mb kb 15mm mm 450mA mA 36b b
Price: 0.0000
RFQ -
7052L20G Integrated Device Technology (IDT)
Through Hole Memory IC 16 kb kb 30.48mm mm 250mA mA 8b b
Price: 0.0000
RFQ -
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71V3558SA166BQGI8 Integrated Device Technology (IDT)
165 Pin Memory IC 4.5 Mb kb 15mm mm
Price: 0.0000
RFQ




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