Items : %s%s
Memory
Contact Plating
- Tin
ECCN Code
- 3A991.B.1.A
- EAR99
Factory Lead Time
- 11 Weeks
- 4 Weeks
- 5 Weeks
- 6 Weeks
- 7 Weeks
- 8 Weeks
JESD-609 Code
- e3
- e4
Manufacturer Package Identifier
- 24AA256-I/P
Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- 1 (Unlimited)
- 3 (168 Hours)
Mount
- Surface Mount
- Through Hole
Mounting Type
- Surface Mount
- Through Hole
Number of Pins
- 28
- 3
- 32
- 5
- 8
Number of Terminations
- 28
- 3
- 32
- 5
- 8
Operating Temperature
- -40°C~85°C TA
- 0°C~70°C TA
Package / Case
- 28-DIP (0.600, 15.24mm)
- 32-DIP (0.600, 15.24mm)
- 32-LCC (J-Lead)
- 32-TFSOP (0.488, 12.40mm Width)
- 8-DIP (0.300, 7.62mm)
- 8-SOIC (0.154, 3.90mm Width)
- 8-SOIC (0.209, 5.30mm Width)
- 8-TSSOP, 8-MSOP (0.118, 3.00mm Width)
- SC-74A, SOT-753
- TO-226-3, TO-92-3 (TO-226AA)
Packaging
- Bulk
- Tape & Reel (TR)
- Tray
- Tube
Part Status
- Active
- Obsolete
Pbfree Code
- yes
Published
- 1995
- 1997
- 2000
- 2002
- 2003
- 2004
- 2005
- 2007
- 2008
- 2009
- 2013
Series
- MoBL®
- SST39 MPF™
Surface Mount
- NO
- YES
Terminal Finish
- Matte Tin (Sn)
- Matte Tin (Sn) - annealed
- Nickel/Palladium/Gold (Ni/Pd/Au)
Termination
- SMD/SMT
- Through Hole
Weight
- 453.59237mg
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Datasheet | Factory Lead Time | Mount | Packaging | Published | Series | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | ECCN Code | Max Operating Temperature | Min Operating Temperature | Operating Supply Voltage | Number of Ports | Length | RoHS Status | Lead Free | Contact Plating | Radiation Hardening | Number of Pins | Additional Feature | Package / Case | Interface | Max Supply Voltage | REACH SVHC | Reach Compliance Code | Min Supply Voltage | Density | Frequency | Height | Width | Thickness | Mounting Type | Operating Temperature | Technology | Operating Supply Current | Operating Mode | Max Supply Current | Height Seated (Max) | HTS Code | Number of Functions | Nominal Supply Current | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Supply Voltage | Time@Peak Reflow Temperature-Max (s) | Base Part Number | Pin Count | Temperature Grade | Surface Mount | Terminal Pitch | JESD-30 Code | Supply Voltage-Min (Vsup) | Subcategory | Qualification Status | Power Supplies | Supply Voltage-Max (Vsup) | Supplier Device Package | Output Characteristics | Access Time | Screening Level | Memory Size | Memory Type | Address Bus Width | Supply Current-Max | Voltage - Supply | Organization | Memory Width | Memory Density | Sync/Async | Data Bus Width | Clock Frequency | Standby Current-Max | Access Time (Max) | Word Size | Alternate Memory Width | Data Retention Time-Min | Endurance | Write Protection | Write Cycle Time-Max (tWC) | I/O Type | Serial Bus Type | I2C Control Byte | Refresh Cycles | Standby Voltage-Min | Memory Format | Memory Interface | Write Cycle Time - Word, Page | Sequential Burst Length | Interleaved Burst Length |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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AT24C11-10TU-1.8 | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tube | Obsolete | 1 (Unlimited) | ROHS3 Compliant | 8-TSSOP (0.173, 4.40mm Width) | Surface Mount | -40°C~85°C TA | EEPROM | AT24C11 | 8-TSSOP | 550ns | 1Kb 128 x 8 | Non-Volatile | 1.8V~5.5V | 1MHz | EEPROM | I2C | 5ms | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BR24L04-W | ROHM Semiconductor | 3.3592 |
Min: 1 Mult: 1 |
0.00000000 | download | Tube | 2005 | yes | Active | 1 (Unlimited) | 8 | EAR99 | 9.3mm | ROHS3 Compliant | Lead Free | 8-DIP (0.300, 7.62mm) | 2-Wire, I2C, Serial | 7.62mm | Through Hole | -40°C~85°C TA | CMOS | SYNCHRONOUS | 3.7mm | 8542.32.00.51 | 1 | e3/e2 | TIN/TIN COPPER | DUAL | 260 | 2.5V | 10 | BR24L04 | 8 | NO | 2.54mm | R-PDIP-T8 | 1.8V | Not Qualified | 2/5V | 5.5V | 400 ms | 4Kb 512 x 8 | Non-Volatile | 0.002mA | 1.8V~5.5V | 512X8 | 8 | 4096 bit | 400kHz | 0.000002A | 40 | 1000000 Write/Erase Cycles | HARDWARE | 5ms | I2C | 1010DDMR | EEPROM | I2C | 5ms | |||||||||||||||||||||||||||||||||||||||||
.png "7130LA55TFI") |
7130LA55TFI | Renesas Electronics America Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tray | Obsolete | 3 (168 Hours) | Non-RoHS Compliant | 64-LQFP | Surface Mount | -40°C~85°C TA | SRAM - Dual Port, Asynchronous | 8Kb 1K x 8 | Volatile | 4.5V~5.5V | SRAM | Parallel | 55ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IS42VM32160E-75BLI | ISSI, Integrated Silicon Solution Inc | 9.6212 |
Min: 1 Mult: 1 |
0.00000000 | 12 Weeks | Tray | Active | 3 (168 Hours) | 90 | 1 | 13mm | ROHS3 Compliant | AUTO/SELF REFRESH | 90-TFBGA | 8mm | Surface Mount | -40°C~85°C TA | SDRAM - Mobile | SYNCHRONOUS | 1.2mm | 1 | BOTTOM | NOT SPECIFIED | 1.8V | NOT SPECIFIED | YES | 0.8mm | R-PBGA-B90 | 1.7V | 1.95V | 6ns | 512Mb 16M x 32 | Volatile | 1.7V~1.95V | 16MX32 | 32 | 536870912 bit | 133MHz | DRAM | Parallel | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IS64LV25616AL-12TLA3 | ISSI, Integrated Silicon Solution Inc | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 12 Weeks | Surface Mount | Tray | yes | Active | 2 (1 Year) | 44 | 3.3V | 1 | ROHS3 Compliant | 44 | 44-TSOP (0.400, 10.16mm Width) | 4 Mb | Surface Mount | -40°C~125°C TA | SRAM - Asynchronous | 1 | 120mA | e3 | Matte Tin (Sn) - annealed | DUAL | 260 | 3.3V | 40 | 44 | 0.8mm | Not Qualified | 3.63V | 3-STATE | 4Mb 256K x 16 | Volatile | 18b | 3.135V~3.6V | 16 | Asynchronous | 0.02A | 16b | COMMON | 2V | SRAM | Parallel | 12ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||
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11LC080-I/P | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 8 Weeks | Through Hole | Tube | 2009 | yes | Active | 1 (Unlimited) | 8 | EAR99 | 5V | 9.46mm | ROHS3 Compliant | Lead Free | Tin | No | 8 | 8-DIP (0.300, 7.62mm) | Serial | No SVHC | 8 kb | 3.3mm | 6.35mm | Through Hole | -40°C~85°C TA | CMOS | 1 | 5mA | e3 | DUAL | 5V | 11LC080 | 8 | 2.54mm | 5 ms | 8Kb 1K x 8 | Non-Volatile | 2.5V~5.5V | 100kHz | 0.000005A | 200 | 1000000 Write/Erase Cycles | SOFTWARE | 10ms | 1-WIRE | EEPROM | Single Wire | |||||||||||||||||||||||||||||||||||||||||||||||||
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IS61DDB22M18C-250M3L | ISSI, Integrated Silicon Solution Inc | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 12 Weeks | Tray | Active | 3 (168 Hours) | 165 | 17mm | ROHS3 Compliant | 165-LBGA | 15mm | Surface Mount | 0°C~70°C TA | SRAM - Synchronous, DDR II | 1.4mm | 8542.32.00.41 | 1 | BOTTOM | NOT SPECIFIED | 1.8V | NOT SPECIFIED | YES | 1mm | R-PBGA-B165 | 1.71V | 1.89V | 8.4ns | 36Mb 2M x 18 | Volatile | 1.71V~1.89V | 2MX18 | 18 | 37748736 bit | 250MHz | SRAM | Parallel | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IDT71V3557S85BQI | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 2009 | 3 (168 Hours) | 165 | 3A991.B.2.A | 85°C | -40°C | 15mm | Non-RoHS Compliant | 165 | FLOW-THROUGH ARCHITECTURE | Parallel | not_compliant | 13mm | CMOS | SYNCHRONOUS | 1.2mm | 8542.32.00.41 | 1 | e0 | Tin/Lead (Sn63Pb37) | BOTTOM | BALL | 225 | 3.3V | 20 | 165 | INDUSTRIAL | YES | 1mm | 3.135V | SRAMs | Not Qualified | 3.3V | 3.465V | 3-STATE | RAM, SRAM | 0.235mA | 128KX36 | 36 | 4718592 bit | 90MHz | 0.045A | 8.5 ns | COMMON | 3.14V | ||||||||||||||||||||||||||||||||||||||||||||||||||
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MT45W4MW16BBB-706 L WT TR | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tape & Reel (TR) | 2005 | Discontinued | 2 (1 Year) | ROHS3 Compliant | 54-VFBGA | Surface Mount | -30°C~85°C TC | PSRAM (Pseudo SRAM) | MT45W4MW16 | 54-VFBGA (6x9) | 70ns | 64Mb 4M x 16 | Volatile | 1.7V~1.95V | PSRAM | Parallel | 70ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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AS7C31025C-10TJIN | Alliance Memory, Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tube | 2006 | yes | Obsolete | 3 (168 Hours) | 32 | 3A991.B.2.B | 3.3V | 20.955mm | RoHS Compliant | Lead Free | 32 | 32-BSOJ (0.300, 7.62mm Width) | 1 Mb | 7.62mm | Surface Mount | -40°C~85°C TA | SRAM - Asynchronous | 3.683mm | 1 | DUAL | 245 | 3.3V | 40 | 32 | YES | 1.27mm | 3V | Not Qualified | 3.6V | 1Mb 128K x 8 | Volatile | 3V~3.6V | 128KX8 | 8 | 10 ns | SRAM | Parallel | 10ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IS46TR16256AL-125KBLA2 | ISSI, Integrated Silicon Solution Inc | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 10 Weeks | Tray | Active | 3 (168 Hours) | 96 | 1 | 13mm | ROHS3 Compliant | 96 | PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESH | 96-TFBGA | Surface Mount | -40°C~105°C TC | SDRAM - DDR3 | SYNCHRONOUS | 261mA | 1.2mm | 1 | BOTTOM | 1.35V | YES | 0.8mm | 1.283V | Not Qualified | 1.35V | 1.45V | 3-STATE | 20ns | AEC-Q100 | 4Gb 256M x 16 | Volatile | 1.283V~1.45V | 256MX16 | 16 | 16b | 800MHz | 0.016A | COMMON | 8192 | DRAM | Parallel | 15ns | 48 | 48 | ||||||||||||||||||||||||||||||||||||||||||||||||||||
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CG7721AAT | Rochester Electronics, LLC | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tape & Reel (TR) | Obsolete | 3 (168 Hours) | Non-RoHS Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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S99-50411 | Cypress Semiconductor Corp | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tray | Obsolete | 3 (168 Hours) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
CY7C1425LV18-250BZC | Cypress Semiconductor Corp | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 7 Weeks | Tray | Last Time Buy | 3 (168 Hours) | Non-RoHS Compliant | 165 | 165-LBGA | Surface Mount | 0°C~70°C TA | SRAM - Synchronous, QDR II | 36Mb 4M x 9 | Volatile | 1.7V~1.9V | 250MHz | SRAM | Parallel | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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93AA56T/SN | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 29 Weeks | Surface Mount | Tape & Reel (TR) | 2004 | yes | Active | 1 (Unlimited) | 8 | EAR99 | 4.9mm | ROHS3 Compliant | Lead Free | Tin | No | 8 | 100K ERASE/WRITE CYCLES MIN; DATA RETENTION > 40 YEARS | 8-SOIC (0.154, 3.90mm Width) | 2-Wire, Serial | 2 kb | 3.9mm | Surface Mount | -40°C~85°C TA | CMOS | 1.75mm | 1 | 3mA | e3 | DUAL | 260 | 3V | 40 | 93AA56 | 8 | 1.27mm | 2/5V | 5.5V | 3-STATE | 6 ms | 2Kb 256 x 8 128 x 16 | Non-Volatile | 1.8V~5.5V | 16 | 2MHz | 0.00003A | 8 | 200 | 10000000 Write/Erase Cycles | SOFTWARE | 10ms | MICROWIRE | EEPROM | SPI | 10ms | ||||||||||||||||||||||||||||||||||||||||||
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IS43DR16320D-3DBLI-TR | ISSI, Integrated Silicon Solution Inc | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 8 Weeks | Tape & Reel (TR) | yes | Active | 3 (168 Hours) | 1.8V | ROHS3 Compliant | 84 | 84-TFBGA | 512 Mb | Surface Mount | -40°C~85°C TA | SDRAM - DDR2 | NOT SPECIFIED | NOT SPECIFIED | 450ps | 512Mb 32M x 16 | Volatile | 13b | 1.7V~1.9V | 333MHz | DRAM | Parallel | 15ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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7006L20G | Renesas Electronics America Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 13 Weeks | Tray | Active | 1 (Unlimited) | Non-RoHS Compliant | 68-BPGA | Through Hole | 0°C~70°C TA | SRAM - Dual Port, Asynchronous | IDT7006 | 128Kb 16K x 8 | Volatile | 4.5V~5.5V | SRAM | Parallel | 20ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
MT48LC16M8A2FB-75 IT:G TR | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tape & Reel (TR) | 2006 | Obsolete | 3 (168 Hours) | Non-RoHS Compliant | 60-FBGA | Surface Mount | -40°C~85°C TA | SDRAM | MT48LC16M8A2 | 5.4ns | 128Mb 16M x 8 | Volatile | 3V~3.6V | 133MHz | DRAM | Parallel | 15ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
70V7319S166BF8 | Renesas Electronics America Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 12 Weeks | Tape & Reel (TR) | Active | 4 (72 Hours) | Non-RoHS Compliant | 208-LFBGA | Surface Mount | 0°C~70°C TA | SRAM - Dual Port, Synchronous | IDT70V7319 | 208-CABGA (15x15) | 3.6ns | 4.5Mb 256K x 18 | Volatile | 3.15V~3.45V | 166MHz | SRAM | Parallel | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IS43LR32400F-6BLI | ISSI, Integrated Silicon Solution Inc | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Surface Mount | Tray | yes | Obsolete | 3 (168 Hours) | 90 | EAR99 | 1.8V | 1 | 13mm | RoHS Compliant | No | 90 | AUTO/SELF REFRESH | 90-TFBGA | 128 Mb | Surface Mount | -40°C~85°C TA | SDRAM - Mobile LPDDR | 1.2mm | 8542.32.00.02 | 1 | 95mA | e1 | TIN SILVER COPPER | BOTTOM | 260 | 1.8V | 40 | 90 | 0.8mm | 1.7V | 1.95V | 3-STATE | 5.5ns | 128Mb 4M x 32 | Volatile | 14b | 1.7V~1.95V | 4MX32 | 32 | 32b | 166MHz | 0.00001A | COMMON | 4096 | DRAM | Parallel | 15ns | 24816 | 24816 | |||||||||||||||||||||||||||||||||||||||||||||
 |
S29GL256S11TFV023 | Cypress Semiconductor Corp | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 10 Weeks | Tape & Reel (TR) | GL-S | Active | 3 (168 Hours) | ROHS3 Compliant | 56-TFSOP (0.724, 18.40mm Width) | Surface Mount | -40°C~105°C TA | FLASH - NOR | 110ns | 256Mb 16M x 16 | Non-Volatile | 2.7V~3.6V | FLASH | Parallel | 60ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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DS1250WP-100+ | Maxim Integrated | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 11 Weeks | Tube | 2004 | yes | Active | 3 (168 Hours) | 34 | 3A991.B.2.A | 3.3V | ROHS3 Compliant | Lead Free | No | 34 | 34-PowerCap™ Module | 4 Mb | 100GHz | Surface Mount | 0°C~70°C TA | NVSRAM (Non-Volatile SRAM) | 50mA | 8542.32.00.41 | 1 | e3 | MATTE TIN | DUAL | 3.3V | DS1250W | 34 | YES | 3V | SRAMs | 3.6V | 4Mb 512K x 8 | Non-Volatile | 0.05mA | 3V~3.6V | 512KX8 | 8 | 8b | 0.00025A | 100 ns | NVSRAM | Parallel | 100ns | |||||||||||||||||||||||||||||||||||||||||||||||||||
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7052S35GB | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Through Hole | Bulk | 2009 | Active | 125°C | -55°C | 5V | 4 | 30.48mm | RoHS Compliant | Contains Lead | No | 108 | Parallel | 5.5V | 4.5V | 16 kb | 30.48mm | 3.68mm | 360mA | 35 ns | 2kB | RAM, SDR, SRAM | 11b | Asynchronous | 8b | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
AT27C020-12TI | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tray | 2000 | Obsolete | 3 (168 Hours) | Non-RoHS Compliant | 32-TFSOP (0.724, 18.40mm Width) | Surface Mount | -40°C~85°C TC | EPROM - OTP | AT27C020 | 120ns | 2Mb 256K x 8 | Non-Volatile | 4.5V~5.5V | EPROM | Parallel | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
71024S15YGI | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | 2009 | yes | Active | 3 (168 Hours) | 32 | 85°C | -40°C | 5V | 1 | 20.9mm | RoHS Compliant | Lead Free | No | 32 | Parallel | 5.5V | 4.5V | 1 Mb | 10.2mm | 2.2mm | CMOS | 3.683mm | 1 | e3 | Matte Tin (Sn) - annealed | DUAL | J BEND | 260 | 5V | 32 | INDUSTRIAL | YES | SRAMs | 5V | 3-STATE | 15 ns | 128kB | RAM, SDR, SRAM - Asynchronous | 17b | COMMON | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
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93C86CT-I/ST | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 6 Weeks | Surface Mount | Tape & Reel (TR) | 2012 | yes | Active | 1 (Unlimited) | 8 | 5V | 4.4mm | ROHS3 Compliant | Lead Free | Tin | No | 8 | 8-TSSOP (0.173, 4.40mm Width) | Serial | 16 kb | 3mm | Surface Mount | -40°C~85°C TA | CMOS | 1.1mm | 1 | 3mA | e3 | DUAL | 260 | 5V | 40 | 93C86C | 8 | 0.65mm | 5V | 100 ns | 16Kb 2K x 8 1K x 16 | Non-Volatile | 4.5V~5.5V | 1KX16 | 16 | 3MHz | 0.000001A | 8 | 200 | 1000000 Write/Erase Cycles | HARDWARE/SOFTWARE | 2ms | MICROWIRE | EEPROM | SPI | 2ms | ||||||||||||||||||||||||||||||||||||||||||||
 |
IDT71V3557S80PFI8 | Renesas Electronics America Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tape & Reel (TR) | Obsolete | 3 (168 Hours) | Non-RoHS Compliant | 100-LQFP | Surface Mount | -40°C~85°C TA | SRAM - Synchronous, SDR (ZBT) | IDT71V3557 | 8ns | 4.5Mb 128K x 36 | Volatile | 3.135V~3.465V | SRAM | Parallel | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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70V7319S166BF | Renesas Electronics America Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 12 Weeks | Tray | Active | 4 (72 Hours) | Non-RoHS Compliant | 208-LFBGA | Surface Mount | 0°C~70°C TA | SRAM - Dual Port, Synchronous | IDT70V7319 | 208-CABGA (15x15) | 3.6ns | 4.5Mb 256K x 18 | Volatile | 3.15V~3.45V | 166MHz | SRAM | Parallel | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
MT46V16M16P-6T:F | Micron Technology Inc. | 5.6400 |
Min: 1 Mult: 1 |
0.00000000 | download | Surface Mount | Tray | 2009 | Obsolete | 2 (1 Year) | 66 | EAR99 | 2.5V | 1 | 22.22mm | ROHS3 Compliant | Lead Free | 66 | AUTO/SELF REFRESH | 66-TSSOP (0.400, 10.16mm Width) | unknown | 256 Mb | Surface Mount | 0°C~70°C TA | SDRAM - DDR | SYNCHRONOUS | 1.2mm | 8542.32.00.24 | 1 | 220mA | e3 | Matte Tin (Sn) | DUAL | 260 | 2.5V | 30 | MT46V16M16 | 66 | 0.65mm | 2.3V | Not Qualified | 2.6V | 2.7V | 3-STATE | 700ps | 256Mb 16M x 16 | Volatile | 15b | 2.3V~2.7V | 16MX16 | 16 | 16b | 167MHz | 0.004A | COMMON | 8192 | DRAM | Parallel | 15ns | 248 | 248 | |||||||||||||||||||||||||||||||||||||||
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BR24T64FV-WE2 | ROHM Semiconductor | 2.2505 |
Min: 1 Mult: 1 |
0.00000000 | 6 Weeks | Surface Mount | Tape & Reel (TR) | 2013 | yes | Active | 1 (Unlimited) | 8 | 4.4mm | ROHS3 Compliant | Lead Free | Copper, Tin | 8 | 8-LSSOP (0.173, 4.40mm Width) | 2-Wire, I2C, Serial | 64 kb | 3mm | Surface Mount | -40°C~85°C TA | CMOS | SYNCHRONOUS | 1.35mm | 1 | e3 | Matte Tin (Sn) | DUAL | 225 | 2.5V | NOT SPECIFIED | 0.65mm | 1.6V | Not Qualified | 5.5V | 900 ns | 64Kb 8K x 8 | Non-Volatile | 0.002mA | 1.6V~5.5V | 8 | 400kHz | 0.000002A | 40 | 1000000 Write/Erase Cycles | HARDWARE | 5ms | I2C | 1010DDDR | EEPROM | I2C | 5ms |
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IS64LV25616AL-12TLA3 ISSI, Integrated Silicon Solution Inc
Surface Mount 44 Pin Memory IC 4 Mb kb 120mA mA 16b b
Price: 0.0000
RFQ -
11LC080-I/P Microchip Technology
Through Hole 8 Pin Memory IC 11LC080 8 kb kb 9.46mm mm 5mA mA
Price: 0.0000
RFQ -
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IDT71V3557S85BQI Integrated Device Technology (IDT)
3.3V V 165 Pin Memory IC 15mm mm
Price: 0.0000
RFQ -
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IS46TR16256AL-125KBLA2 ISSI, Integrated Silicon Solution Inc
1.35V V Memory IC 13mm mm
Price: 0.0000
RFQ -
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93AA56T/SN Microchip Technology
2/5V V Surface Mount 8 Pin Memory IC 93AA56 2 kb kb 4.9mm mm 3mA mA
Price: 0.0000
RFQ -
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IS43LR32400F-6BLI ISSI, Integrated Silicon Solution Inc
Surface Mount 90 Pin Memory IC 128 Mb kb 13mm mm 95mA mA
Price: 0.0000
RFQ -
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7052S35GB Integrated Device Technology (IDT)
Through Hole Memory IC 16 kb kb 30.48mm mm 360mA mA 8b b
Price: 0.0000
RFQ -
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71024S15YGI Integrated Device Technology (IDT)
5V V 32 Pin Memory IC 1 Mb kb 20.9mm mm
Price: 0.0000
RFQ -
93C86CT-I/ST Microchip Technology
5V V Surface Mount 8 Pin Memory IC 93C86C 16 kb kb 4.4mm mm 3mA mA
Price: 0.0000
RFQ -
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MT46V16M16P-6T:F Micron Technology Inc.
2.6V V Surface Mount 66 Pin Memory IC MT46V16M16 256 Mb kb 22.22mm mm 220mA mA
Price: 5.6400
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