Items : %s%s
Memory
Contact Plating
- Tin
ECCN Code
- 3A991.B.1.A
- EAR99
Factory Lead Time
- 11 Weeks
- 4 Weeks
- 5 Weeks
- 6 Weeks
- 7 Weeks
- 8 Weeks
JESD-609 Code
- e3
- e4
Manufacturer Package Identifier
- 24AA256-I/P
Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- 1 (Unlimited)
- 3 (168 Hours)
Mount
- Surface Mount
- Through Hole
Mounting Type
- Surface Mount
- Through Hole
Number of Pins
- 28
- 3
- 32
- 5
- 8
Number of Terminations
- 28
- 3
- 32
- 5
- 8
Operating Temperature
- -40°C~85°C TA
- 0°C~70°C TA
Package / Case
- 28-DIP (0.600, 15.24mm)
- 32-DIP (0.600, 15.24mm)
- 32-LCC (J-Lead)
- 32-TFSOP (0.488, 12.40mm Width)
- 8-DIP (0.300, 7.62mm)
- 8-SOIC (0.154, 3.90mm Width)
- 8-SOIC (0.209, 5.30mm Width)
- 8-TSSOP, 8-MSOP (0.118, 3.00mm Width)
- SC-74A, SOT-753
- TO-226-3, TO-92-3 (TO-226AA)
Packaging
- Bulk
- Tape & Reel (TR)
- Tray
- Tube
Part Status
- Active
- Obsolete
Pbfree Code
- yes
Published
- 1995
- 1997
- 2000
- 2002
- 2003
- 2004
- 2005
- 2007
- 2008
- 2009
- 2013
Series
- MoBL®
- SST39 MPF™
Surface Mount
- NO
- YES
Terminal Finish
- Matte Tin (Sn)
- Matte Tin (Sn) - annealed
- Nickel/Palladium/Gold (Ni/Pd/Au)
Termination
- SMD/SMT
- Through Hole
Weight
- 453.59237mg
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Datasheet | Factory Lead Time | Mount | Packaging | Published | Series | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | Termination | ECCN Code | Max Operating Temperature | Min Operating Temperature | Operating Supply Voltage | Number of Ports | Length | RoHS Status | Lead Free | Contact Plating | Radiation Hardening | Number of Pins | Additional Feature | Package / Case | Interface | Max Supply Voltage | REACH SVHC | Reach Compliance Code | Min Supply Voltage | Density | Frequency | Height | Width | Thickness | Mounting Type | Operating Temperature | Technology | Operating Supply Current | Operating Mode | Height Seated (Max) | HTS Code | Number of Functions | Nominal Supply Current | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Supply Voltage | Time@Peak Reflow Temperature-Max (s) | Base Part Number | Pin Count | Temperature Grade | Surface Mount | Terminal Pitch | JESD-30 Code | Supply Voltage-Min (Vsup) | Operating Temperature (Max) | Operating Temperature (Min) | Subcategory | Qualification Status | Power Supplies | Supply Voltage-Max (Vsup) | Voltage | Supplier Device Package | Output Characteristics | Access Time | Screening Level | Memory Size | Memory Type | Address Bus Width | Supply Current-Max | Voltage - Supply | Organization | Memory Width | Memory Density | Memory IC Type | Sync/Async | Data Bus Width | Parallel/Serial | Clock Frequency | Standby Current-Max | Access Time (Max) | Word Size | Alternate Memory Width | Data Retention Time-Min | Endurance | Write Protection | Write Cycle Time-Max (tWC) | I/O Type | Programming Voltage | Serial Bus Type | Refresh Cycles | Standby Voltage-Min | Memory Format | Memory Interface | Write Cycle Time - Word, Page | Sequential Burst Length | Interleaved Burst Length |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
93LC46/P | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 13 Weeks | Tube | 2004 | yes | Active | 1 (Unlimited) | 8 | EAR99 | 2.5V | 9.9695mm | ROHS3 Compliant | Lead Free | No | 8 | 100K ERASE/WRITE CYCLES MIN; DATA RETENTION > 40 YEARS | 8-DIP (0.300, 7.62mm) | Serial | No SVHC | 1 kb | 7.62mm | Through Hole | 0°C~70°C TA | CMOS | 4.064mm | 1 | 3mA | e3 | Matte Tin (Sn) - annealed | DUAL | 5V | 93LC46 | 8 | NO | 2.54mm | 2V | 3/5V | 6V | 3-STATE | 1 μs | 1Kb 128 x 8 64 x 16 | Non-Volatile | 2.5V~5.5V | 8 | 2MHz | 0.00003A | 16 | 200 | 1000000 Write/Erase Cycles | SOFTWARE | 10ms | MICROWIRE | EEPROM | SPI | 10ms | ||||||||||||||||||||||||||||||||||||||||||||||
 |
70V05S35PF | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Surface Mount | 2006 | no | Active | 3 (168 Hours) | 64 | EAR99 | 70°C | 0°C | 3.3V | 2 | 14mm | RoHS Compliant | Contains Lead | No | 64 | INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN | TQFP | Parallel | 3.6V | 3V | 64 kb | 14mm | 1.4mm | CMOS | 1.6mm | 1 | 180mA | e0 | Tin/Lead (Sn85Pb15) | QUAD | GULL WING | 240 | 3.3V | 20 | 64 | COMMERCIAL | 0.8mm | SRAMs | 3-STATE | 35 ns | 8kB | RAM, SDR, SRAM | 26b | 8KX8 | Asynchronous | 0.005A | 8b | COMMON | 3V | |||||||||||||||||||||||||||||||||||||||||||||||||
 |
N25Q256A13ESFH0F TR | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tape & Reel (TR) | 2016 | Obsolete | 3 (168 Hours) | ROHS3 Compliant | 16-SOIC (0.295, 7.50mm Width) | Surface Mount | -40°C~85°C TA | FLASH - NOR | N25Q256 | 256Mb 64M x 4 | Non-Volatile | 2.7V~3.6V | 108MHz | FLASH | SPI | 8ms, 5ms | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
S25FL064LABBHV023 | Cypress Semiconductor Corp | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 13 Weeks | Tape & Reel (TR) | FL-L | Active | 3 (168 Hours) | 24 | 8mm | ROHS3 Compliant | IT ALSO HAVE X1 MEMORY WIDTH | 24-TBGA | 6mm | Surface Mount | -40°C~105°C TA | FLASH - NOR | SYNCHRONOUS | 1.2mm | 8542.32.00.51 | 1 | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | BOTTOM | NOT SPECIFIED | 3V | NOT SPECIFIED | YES | 1mm | R-PBGA-B24 | 2.7V | 3.6V | 64Mb 8M x 8 | Non-Volatile | 2.7V~3.6V | 16MX4 | 4 | 67108864 bit | SERIAL | 108MHz | 2 | 3V | FLASH | SPI - Quad I/O, QPI | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
25AA080C-E/MNY16KVAO | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tube | Automotive, AEC-Q100 | Active | 1 (Unlimited) | 8 | 3mm | 8-WFDFN Exposed Pad | compliant | 2mm | Surface Mount | -40°C~125°C TA | CMOS | SYNCHRONOUS | 0.8mm | 1 | DUAL | 5V | 25AA080C | YES | 0.5mm | R-PDSO-N8 | 4.5V | 5.5V | AEC-Q100; TS 16949 | 8Kb 1K x 8 | Non-Volatile | 1.8V~5.5V | 1KX8 | 8 | 8192 bit | SERIAL | 10MHz | 5ms | SPI | EEPROM | SPI | 5ms | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
.png "CG8262AAT") |
CG8262AAT | Cypress Semiconductor Corp | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tape & Reel (TR) | 2016 | Obsolete | 3 (168 Hours) | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
71024S15YGI8 | Renesas Electronics America Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 14 Weeks | Tape & Reel (TR) | Active | 3 (168 Hours) | ROHS3 Compliant | 32-BSOJ (0.400, 10.16mm Width) | Surface Mount | -40°C~85°C TA | SRAM - Asynchronous | IDT71024 | 32-SOJ | 15ns | 1Mb 128K x 8 | Volatile | 4.5V~5.5V | SRAM | Parallel | 15ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
MT53B256M64D2NW-062 WT:C | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Bulk | Obsolete | 3 (168 Hours) | ROHS3 Compliant | -30°C~85°C TC | SDRAM - Mobile LPDDR4 | 16Gb 256M x 64 | Volatile | 1.1V | 1600MHz | DRAM | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
EM6HD08EWUF-10H | Etron Technology, Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tape & Reel (TR) | Not For New Designs | 3 (168 Hours) | 78-TFBGA | Surface Mount | 0°C~95°C TC | SDRAM - DDR3L | 20ns | 2Gb 256M x 8 | Volatile | 1.283V~1.45V | 933MHz | DRAM | Parallel | 15ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
CY7C1041G30-10BVXI | Cypress Semiconductor Corp | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 13 Weeks | Tray | 2012 | Active | 3 (168 Hours) | 48 | 3A991.B.2.A | 8mm | ROHS3 Compliant | Lead Free | 48 | 48-VFBGA | 6mm | Surface Mount | -40°C~85°C TA | SRAM - Asynchronous | 1mm | 8542.32.00.41 | 1 | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | BOTTOM | 260 | 3V | 30 | YES | 0.75mm | 2.2V | Not Qualified | 2.5/3.3V | 3.6V | 3-STATE | 4Mb 256K x 16 | Volatile | 0.045mA | 2.2V~3.6V | 256KX16 | 16 | 4194304 bit | 0.008A | 10 ns | COMMON | 1V | SRAM | Parallel | 10ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BQ4014MB-85 | Texas Instruments | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Through Hole | Tube | no | Obsolete | 1 (Unlimited) | 32 | 3A991.B.2.A | 5V | ROHS3 Compliant | Contains Lead | No | 32 | 32-DIP Module (0.61, 15.49mm) | 2 Mb | 85GHz | Through Hole | 0°C~70°C TA | NVSRAM (Non-Volatile SRAM) | 1 | 110mA | DUAL | 5V | BQ4014 | 2.54mm | SRAMs | 5V | 2Mb 256K x 8 | Non-Volatile | 4.75V~5.5V | 256KX8 | 8 | 8b | 0.005A | 85 ns | 8b | NVSRAM | Parallel | 85ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IS46DR16640B-3DBLA2 | ISSI, Integrated Silicon Solution Inc | 9.8219 |
Min: 1 Mult: 1 |
0.00000000 | 8 Weeks | Surface Mount | Tray | Active | 3 (168 Hours) | 84 | EAR99 | 1.8V | 1 | 12.5mm | ROHS3 Compliant | No | 84 | AUTO/SELF REFRESH | 84-TFBGA | 1 Gb | Surface Mount | -40°C~105°C TA | SDRAM - DDR2 | 1.2mm | 8542.32.00.32 | 1 | 220mA | BOTTOM | 1.8V | 0.8mm | 1.7V | 1.9V | 3-STATE | 450ps | AEC-Q100 | 1Gb 64M x 16 | Volatile | 16b | 1.7V~1.9V | 64MX16 | 16 | 16b | 333MHz | 0.015A | COMMON | 8192 | DRAM | Parallel | 15ns | 48 | 48 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
MT29F128G08CFAAAWP-Z:A TR | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 4 Weeks | Tape & Reel (TR) | Obsolete | 3 (168 Hours) | ROHS3 Compliant | 48-TFSOP (0.724, 18.40mm Width) | Surface Mount | 0°C~70°C TA | FLASH - NAND | 128Gb 16G x 8 | Non-Volatile | 2.7V~3.6V | FLASH | Parallel | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
S34ML04G100TFI900 | SkyHigh Memory Limited | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tray | Active | 3 (168 Hours) | RoHS Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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S34ML02G100TFV003 | SkyHigh Memory Limited | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tape & Reel (TR) | Active | 3 (168 Hours) | 48 | 18.4mm | RoHS Compliant | 12mm | CMOS | ASYNCHRONOUS | 1.2mm | 1 | e3 | Matte Tin (Sn) | DUAL | GULL WING | NOT SPECIFIED | 3.3V | NOT SPECIFIED | INDUSTRIAL | YES | 0.5mm | R-PDSO-G48 | 2.7V | 105°C | -40°C | 3.6V | 256MX8 | 8 | 2147483648 bit | FLASH | PARALLEL | 3V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
S34MS02G104BHV010 | SkyHigh Memory Limited | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tray | Active | 3 (168 Hours) | 63 | 11mm | RoHS Compliant | 9mm | CMOS | ASYNCHRONOUS | 1mm | 1 | BOTTOM | BALL | NOT SPECIFIED | 1.8V | NOT SPECIFIED | INDUSTRIAL | YES | 0.8mm | R-PBGA-B63 | 1.7V | 105°C | -40°C | 1.95V | 128MX16 | 16 | 2147483648 bit | FLASH | PARALLEL | 1.8V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
S25FL512SDSMFB010 | Cypress Semiconductor Corp | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 13 Weeks | Tray | Automotive, AEC-Q100, FL-S | Active | 3 (168 Hours) | 16 | 10.3mm | ROHS3 Compliant | ITS ALSO CONFIGURABLE AS 512MX1 | 16-SOIC (0.295, 7.50mm Width) | SPI, Serial | 7.5mm | Surface Mount | -40°C~105°C TA | FLASH - NOR | SYNCHRONOUS | 2.65mm | 8542.32.00.51 | 1 | DUAL | NOT SPECIFIED | 3V | NOT SPECIFIED | YES | 1.27mm | R-PDSO-G16 | 2.7V | 3.6V | AEC-Q100; TS 16949 | 512Mb 64M x 8 | Non-Volatile | 2.7V~3.6V | 64MX8 | 8 | 512753664 bit | 80MHz | 1 | 3V | FLASH | SPI - Quad I/O | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
25LC320T/SN | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 6 Weeks | Tape & Reel (TR) | 2004 | yes | Active | 1 (Unlimited) | 8 | EAR99 | ROHS3 Compliant | Lead Free | No | 8 | 1M ENDURANCE CYCLE; 200 YEARS DATA RETENTION | 8-SOIC (0.154, 3.90mm Width) | SPI, Serial | 32 kb | Surface Mount | 0°C~70°C TA | CMOS | 1 | 5mA | e3 | Matte Tin (Sn) | DUAL | 260 | 40 | 25LC320 | 8 | YES | 1.27mm | 2.5V | 3/5V | 5.5V | 230 ns | 32Kb 4K x 8 | Non-Volatile | 2.5V~5.5V | 8 | 2MHz | 0.000001A | 200 | 1000000 Write/Erase Cycles | HARDWARE/SOFTWARE | 5ms | SPI | EEPROM | SPI | 5ms | ||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
F256BFHTPBSL85 | SHARP/Socle Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tray | Discontinued | 3 (168 Hours) | 85°C | -40°C | RoHS Compliant | 56-TFSOP (0.724, 18.40mm Width) | Parallel | Surface Mount | -40°C~85°C TA | FLASH | 56-TSOP | 85ns | 256Mb 16M x 16 | Non-Volatile | 1.7V~1.9V | FLASH | Parallel | 85ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
DS1330WP-100IND+ | Maxim Integrated | 18.4129 |
Min: 1 Mult: 1 |
0.00000000 | download | 6 Weeks | Tube | 2010 | yes | Active | 3 (168 Hours) | 34 | EAR99 | 3.3V | ROHS3 Compliant | Lead Free | 34 | 10 YEAR DATA RETENTION | 34-PowerCap™ Module | 256 kb | 100GHz | Surface Mount | -40°C~85°C TA | NVSRAM (Non-Volatile SRAM) | 50mA | ASYNCHRONOUS | 8473.30.11.40 | 1 | e3 | MATTE TIN | DUAL | NOT SPECIFIED | 3.3V | NOT SPECIFIED | DS1330W | 34 | YES | 3V | SRAMs | Not Qualified | 3.6V | 256Kb 32K x 8 | Non-Volatile | 0.05mA | 3V~3.6V | 32KX8 | 8 | 8b | 0.00025A | 100 ns | NVSRAM | Parallel | 100ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
CY7C009-15AC | Cypress Semiconductor Corp | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Surface Mount | Tray | 2002 | Obsolete | 3 (168 Hours) | 100 | 3.3V | 2 | 14mm | Non-RoHS Compliant | Contains Lead | 100 | INTERRUPT FLAG; AUTOMATIC POWER-DOWN; SEMAPHORE | 100-LQFP | not_compliant | 1 Mb | 15GHz | Surface Mount | 0°C~70°C TA | SRAM - Dual Port, Asynchronous | 1.6mm | 1 | 185mA | e0 | TIN LEAD | QUAD | 240 | 5V | 30 | CY7C009 | 100 | 0.5mm | 4.5V | Not Qualified | 5V | 5.5V | 3-STATE | 1Mb 128K x 8 | Volatile | 17b | 4.5V~5.5V | 8 | Asynchronous | 0.0015A | 15 ns | 8b | COMMON | 4.5V | SRAM | Parallel | 15ns | |||||||||||||||||||||||||||||||||||||||||||||||||
 |
DS1230Y-200+ | Maxim Integrated | 23.9814 |
Min: 1 Mult: 1 |
0.00000000 | download | 6 Weeks | Through Hole | Tube | 2002 | yes | Active | 1 (Unlimited) | 28 | Through Hole | EAR99 | 5V | 39.37mm | ROHS3 Compliant | Lead Free | No | 28 | 28-DIP Module (0.600, 15.24mm) | Unknown | 256 kb | 200GHz | 9.35mm | 18.8mm | Through Hole | 0°C~70°C TA | NVSRAM (Non-Volatile SRAM) | 85mA | 8473.30.11.40 | 1 | 85mA | e3 | MATTE TIN | DUAL | 5V | DS1230Y | 28 | 2.54mm | SRAMs | 5V | 256Kb 32K x 8 | Non-Volatile | 15b | 4.5V~5.5V | 32KX8 | 8b | 0.0006A | 200 ns | NVSRAM | Parallel | 200ns | |||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IDT71V25761S166PFI | Renesas Electronics America Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tray | Obsolete | 3 (168 Hours) | Non-RoHS Compliant | 100-LQFP | Surface Mount | -40°C~85°C TA | SRAM - Synchronous, SDR | IDT71V25761 | 3.5ns | 4.5Mb 128K x 36 | Volatile | 3.135V~3.465V | 166MHz | SRAM | Parallel | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
MT29F2G08ABAEAWP-AITX:E TR | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 5 Weeks | Tape & Reel (TR) | Active | 3 (168 Hours) | ROHS3 Compliant | 48-TFSOP (0.724, 18.40mm Width) | Surface Mount | -40°C~85°C TA | FLASH - NAND | 2Gb 256M x 8 | Non-Volatile | 2.7V~3.6V | FLASH | Parallel | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IS42S32160B-75TL | ISSI, Integrated Silicon Solution Inc | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tray | yes | Obsolete | 3 (168 Hours) | 86 | EAR99 | 1 | 22.22mm | RoHS Compliant | 86 | AUTO/SELF REFRESH | 86-TFSOP (0.400, 10.16mm Width) | Surface Mount | 0°C~70°C TA | SDRAM | SYNCHRONOUS | 1.2mm | 8542.32.00.28 | 1 | e3 | Matte Tin (Sn) - annealed | DUAL | 260 | 3.3V | 10 | 86 | YES | 0.5mm | 3V | Not Qualified | 3.6V | 5.5ns | 512Mb 16M x 32 | Volatile | 3V~3.6V | 16MX32 | 32 | 536870912 bit | 32b | 133MHz | DRAM | Parallel | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
AT27C256R-70JU | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Surface Mount | Tube | 1997 | yes | Active | 3 (168 Hours) | 5V | 14.1mm | ROHS3 Compliant | Lead Free | Tin | No | 32 | 32-LCC (J-Lead) | No SVHC | 256 kb | 70GHz | 2.79mm | 11.51mm | Surface Mount | -40°C~85°C TC | EPROM - OTP | 100μA | 20mA | AT27C256 | 5V | 70ns | 256Kb 32K x 8 | Non-Volatile | 4.5V~5.5V | EPROM | Parallel | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
S27KL0641DABHI020 | Cypress Semiconductor Corp | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 13 Weeks | Tray | 2015 | HyperRAM™ KL | Active | 3 (168 Hours) | 24 | 8mm | ROHS3 Compliant | 24-VBGA | 6mm | Surface Mount | -40°C~85°C TA | PSRAM (Pseudo SRAM) | SYNCHRONOUS | 1mm | 8542.31.00.01 | 1 | BOTTOM | NOT SPECIFIED | 3V | NOT SPECIFIED | YES | 1mm | R-PBGA-B24 | 2.7V | 3.6V | 40ns | 64Mb 8M x 8 | Volatile | 2.7V~3.6V | 8MX8 | 8 | 67108864 bit | 100MHz | PSRAM | Parallel | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
BQ2022DBZR | Texas Instruments | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tape & Reel (TR) | no | Obsolete | 1 (Unlimited) | 3 | EAR99 | 2.92mm | ROHS3 Compliant | Contains Lead | No | 3 | TO-236-3, SC-59, SOT-23-3 | Serial | 1 kb | Surface Mount | -40°C~85°C TA | EPROM - OTP | 1.12mm | 1 | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | DUAL | 260 | 2.7V | BQ2022 | 3 | YES | 0.95mm | 2.65V | OTP ROMs | 5.5V | OPEN-DRAIN | 1Kb 256b x 4 pages | Non-Volatile | 0.00002mA | 2.65V~5.5V | 1KX1 | 1 | 0.01667MHz | COMMON | EPROM | Single Wire | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
AS7C1026B-15TCN | Alliance Memory, Inc. | 3.1866 |
Min: 1 Mult: 1 |
0.00000000 | download | 8 Weeks | Tray | 1996 | Active | 3 (168 Hours) | 70°C | 0°C | 5V | 1 | ROHS3 Compliant | Lead Free | No | 44-TSOP (0.400, 10.16mm Width) | Parallel | 5.5V | 4.5V | 1 Mb | Surface Mount | 0°C~70°C TA | SRAM - Asynchronous | 44-TSOP2 | 15ns | 1Mb 64K x 16 | Volatile | 16b | 4.5V~5.5V | SRAM | Parallel | 15ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
MT29F512G08CKCABH7-6:A | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Bulk | 2016 | Obsolete | 3 (168 Hours) | 70°C | 0°C | 3.3V | ROHS3 Compliant | Parallel | Surface Mount | 0°C~70°C TA | FLASH - NAND | MT29F512G08 | 512Gb 64G x 8 | Non-Volatile | 2.7V~3.6V | 166MHz | FLASH | Parallel |
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93LC46/P Microchip Technology
3/5V V 8 Pin Memory IC 93LC46 1 kb kb 9.9695mm mm 3mA mA
Price: 0.0000
RFQ -
70V05S35PF Integrated Device Technology (IDT)
Surface Mount 64 Pin Memory IC 64 kb kb 14mm mm 180mA mA 8b b
Price: 0.0000
RFQ -
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25AA080C-E/MNY16KVAO Microchip Technology
Automotive, AEC-Q100 Memory IC Automotive, AEC-Q100 Series 25AA080C 3mm mm
Price: 0.0000
RFQ -
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BQ4014MB-85 Texas Instruments
5V V Through Hole Memory IC BQ4014 2 Mb kb 110mA mA 8b b
Price: 0.0000
RFQ -
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