Items : %s%s
Memory
Contact Plating
- Tin
ECCN Code
- 3A991.B.1.A
- EAR99
Factory Lead Time
- 11 Weeks
- 4 Weeks
- 5 Weeks
- 6 Weeks
- 7 Weeks
- 8 Weeks
JESD-609 Code
- e3
- e4
Manufacturer Package Identifier
- 24AA256-I/P
Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- 1 (Unlimited)
- 3 (168 Hours)
Mount
- Surface Mount
- Through Hole
Mounting Type
- Surface Mount
- Through Hole
Number of Pins
- 28
- 3
- 32
- 5
- 8
Number of Terminations
- 28
- 3
- 32
- 5
- 8
Operating Temperature
- -40°C~85°C TA
- 0°C~70°C TA
Package / Case
- 28-DIP (0.600, 15.24mm)
- 32-DIP (0.600, 15.24mm)
- 32-LCC (J-Lead)
- 32-TFSOP (0.488, 12.40mm Width)
- 8-DIP (0.300, 7.62mm)
- 8-SOIC (0.154, 3.90mm Width)
- 8-SOIC (0.209, 5.30mm Width)
- 8-TSSOP, 8-MSOP (0.118, 3.00mm Width)
- SC-74A, SOT-753
- TO-226-3, TO-92-3 (TO-226AA)
Packaging
- Bulk
- Tape & Reel (TR)
- Tray
- Tube
Part Status
- Active
- Obsolete
Pbfree Code
- yes
Published
- 1995
- 1997
- 2000
- 2002
- 2003
- 2004
- 2005
- 2007
- 2008
- 2009
- 2013
Series
- MoBL®
- SST39 MPF™
Surface Mount
- NO
- YES
Terminal Finish
- Matte Tin (Sn)
- Matte Tin (Sn) - annealed
- Nickel/Palladium/Gold (Ni/Pd/Au)
Termination
- SMD/SMT
- Through Hole
Weight
- 453.59237mg
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Datasheet | Factory Lead Time | Mount | Packaging | Published | Series | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | ECCN Code | Max Operating Temperature | Min Operating Temperature | Operating Supply Voltage | Number of Ports | Length | RoHS Status | Lead Free | Contact Plating | Radiation Hardening | Number of Pins | Additional Feature | Package / Case | Interface | Max Supply Voltage | Reach Compliance Code | Min Supply Voltage | Density | Frequency | Width | Thickness | Mounting Type | Operating Temperature | Technology | Operating Mode | Height Seated (Max) | HTS Code | Number of Functions | Nominal Supply Current | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Supply Voltage | Time@Peak Reflow Temperature-Max (s) | Base Part Number | Pin Count | Temperature Grade | Surface Mount | Terminal Pitch | JESD-30 Code | Supply Voltage-Min (Vsup) | Operating Temperature (Max) | Operating Temperature (Min) | Subcategory | Qualification Status | Power Supplies | Supply Voltage-Max (Vsup) | Supplier Device Package | Output Characteristics | Access Time | Screening Level | Memory Size | Memory Type | Address Bus Width | Supply Current-Max | Voltage - Supply | Organization | Memory Width | Memory Density | Memory IC Type | Sync/Async | Data Bus Width | Parallel/Serial | Clock Frequency | Standby Current-Max | Access Time (Max) | Word Size | Alternate Memory Width | Data Retention Time-Min | Endurance | Write Protection | Write Cycle Time-Max (tWC) | I/O Type | Programming Voltage | Data Polling | Toggle Bit | Command User Interface | Page Size | Serial Bus Type | I2C Control Byte | Access Mode | Standby Voltage-Min | Memory Format | Memory Interface | Write Cycle Time - Word, Page |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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R1LV5256ESP-7SI#S0 | Renesas Electronics America | 5.0925 |
Min: 1 Mult: 1 |
0.00000000 | download | Surface Mount | Tape & Reel (TR) | 2011 | yes | Active | 1 (Unlimited) | 28 | EAR99 | 3V | 1 | ROHS3 Compliant | Lead Free | No | 28 | 28-SOIC (0.342, 8.69mm Width) | 256 kb | Surface Mount | -40°C~85°C TA | CMOS | 2.4mm | 1 | 25mA | DUAL | 3V | R1LV5256E | 28 | 2.7V | 3.6V | 3-STATE | 256Kb 32K x 8 | Volatile | 15b | 2.7V~3.6V | 32KX8 | 8 | Asynchronous | 70 ns | 8b | COMMON | 2V | SRAM | Parallel | 70ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
.png "71V016SA20BF") |
71V016SA20BF | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 12 Weeks | Surface Mount | 2011 | Active | 70°C | 0°C | 3.3V | 1 | 7mm | RoHS Compliant | Contains Lead | No | 48 | Parallel | 3.6V | 3V | 1 Mb | 7mm | 1.4mm | 120mA | 20 ns | 128kB | RAM, SDR, SRAM - Asynchronous | 16b | Asynchronous | 16b | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
S25FL512SAGBHBA13 | Cypress Semiconductor Corp | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 13 Weeks | Tape & Reel (TR) | 2007 | Automotive, AEC-Q100, FL-S | Active | 3 (168 Hours) | 24 | 8mm | ROHS3 Compliant | 24 | ITS ALSO CONFIGURABLE AS 512MX1 | 24-TBGA | SPI, Serial | 6mm | Surface Mount | -40°C~105°C TA | FLASH - NOR | SYNCHRONOUS | 1.2mm | 8542.32.00.51 | 1 | BOTTOM | NOT SPECIFIED | 3V | NOT SPECIFIED | YES | 1mm | 2.7V | 3.6V | AEC-Q100; TS 16949 | 512Mb 64M x 8 | Non-Volatile | 2.7V~3.6V | 64MX8 | 8 | 512753664 bit | 133MHz | 1 | 3V | FLASH | SPI - Quad I/O | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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11AA160-I/S16K | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tape & Reel (TR) | Active | 1 (Unlimited) | ROHS3 Compliant | Die | Surface Mount | -40°C~85°C TA | EEPROM | 11AA160 | Die | 16Kb 2K x 8 | Non-Volatile | 1.8V~5.5V | 100kHz | EEPROM | Single Wire | 5ms | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
AS4C64M16MD1-6BIN | Alliance Memory, Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 8 Weeks | Tray | 2011 | Obsolete | 3 (168 Hours) | 60 | EAR99 | 1.8V | 1 | 10mm | RoHS Compliant | Lead Free | 60 | AUTO/SELF REFRESH | 60-TFBGA | 1 Gb | Surface Mount | -40°C~85°C TA | SDRAM - Mobile LPDDR | SYNCHRONOUS | 1.05mm | 8542.32.00.32 | 1 | BOTTOM | NOT SPECIFIED | 1.8V | NOT SPECIFIED | YES | 0.8mm | 1.7V | 1.95V | 5ns | 1Gb 64M x 16 | Volatile | 14b | 1.7V~1.95V | 64MX16 | 16 | 166MHz | DRAM | Parallel | 15ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
71T75802S100BGGI8 | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 8 Weeks | Tape & Reel | 2012 | yes | Active | 3 (168 Hours) | 119 | 85°C | -40°C | 2.5V | 1 | 14mm | RoHS Compliant | Lead Free | No | 119 | PIPELINED ARCHITECTURE | BGA | Parallel | 18 Mb | 100MHz | 22mm | 2.15mm | CMOS | 2.36mm | 1 | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | BOTTOM | BALL | 260 | 2.5V | 119 | INDUSTRIAL | YES | 2.375V | SRAMs | 2.625V | 3-STATE | RAM, SRAM | 20b | 0.06A | 5 ns | COMMON | 2.38V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
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CS6567AM | Rochester Electronics, LLC | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tray | Obsolete | 3 (168 Hours) | Non-RoHS Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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CP7457AT | Rochester Electronics, LLC | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tray | Obsolete | 3 (168 Hours) | Non-RoHS Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
24LC512T-E/ST14 | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 6 Weeks | Surface Mount | Tape & Reel (TR) | 2005 | yes | Active | 1 (Unlimited) | 14 | EAR99 | 5mm | ROHS3 Compliant | Lead Free | Tin | No | 14 | 14-TSSOP (0.173, 4.40mm Width) | I2C, Serial | 512 kb | 4.4mm | Surface Mount | -40°C~125°C TA | CMOS | 1.2mm | 8542.32.00.51 | 1 | 5mA | e3 | DUAL | 260 | 4.5V | 40 | 24LC512 | 14 | 0.65mm | 2.5V | 3/5V | 5.5V | 900ns | 512Kb 64K x 8 | Non-Volatile | 2.5V~5.5V | 64KX8 | 8 | 400kHz | 0.000005A | 200 | 1000000 Write/Erase Cycles | HARDWARE | 5ms | I2C | 1010DDDR | EEPROM | I2C | 5ms | ||||||||||||||||||||||||||||||||||||||||||||
 |
BR24T04FVJ-WE2 | ROHM Semiconductor | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 10 Weeks | Surface Mount | Tape & Reel (TR) | 2013 | yes | Active | 1 (Unlimited) | 8 | 3mm | ROHS3 Compliant | Copper, Tin | 8-TSSOP, 8-MSOP (0.118, 3.00mm Width) | 2-Wire, I2C, Serial | 4 kb | 3mm | Surface Mount | -40°C~85°C TA | CMOS | SYNCHRONOUS | 1.1mm | 1 | e3 | Matte Tin (Sn) | DUAL | 225 | 2.5V | NOT SPECIFIED | BR24T04 | 0.65mm | S-PDSO-G8 | 1.6V | Not Qualified | 1.8/5V | 5.5V | 900 ns | 4Kb 512 x 8 | Non-Volatile | 0.002mA | 1.6V~5.5V | 512X8 | 8 | 400kHz | 0.000002A | 40 | 1000000 Write/Erase Cycles | HARDWARE | 5ms | I2C | 1010DDMR | EEPROM | I2C | 5ms | |||||||||||||||||||||||||||||||||||||||||||||||
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AS4C512M32MD3-15BCNTR | Alliance Memory, Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tape & Reel (TR) | Obsolete | 3 (168 Hours) | 178-VFBGA | Surface Mount | -25°C~85°C TC | SDRAM - Mobile LPDDR3 | 16Gb 512M x 32 | Volatile | 1.14V~1.95V | 667MHz | DRAM | Parallel | 15ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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EDF8164A3PF-JD-F-D | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tray | Obsolete | 3 (168 Hours) | ROHS3 Compliant | FBGA | -30°C~85°C TC | SDRAM - Mobile LPDDR3 | 8Gb 128M x 64 | Volatile | 1.14V~1.95V | 933MHz | DRAM | Parallel | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
70V9079L12PF8 | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Surface Mount | Tape & Reel | 2009 | no | Active | 3 (168 Hours) | 100 | EAR99 | 70°C | 0°C | 3.3V | 2 | 14mm | RoHS Compliant | Contains Lead | No | 100 | FLOW-THROUGH OR PIPELINED ARCHITECTURE | TQFP | Parallel | 3.6V | 3V | 256 kb | 33.3MHz | 14mm | 1.4mm | CMOS | 1.6mm | 1 | 205mA | e0 | Tin/Lead (Sn85Pb15) | QUAD | GULL WING | 240 | 3.3V | 20 | 100 | COMMERCIAL | 0.5mm | SRAMs | 3-STATE | 25 ns | RAM, SRAM | 30b | Synchronous | 0.003A | 8b | COMMON | 3V | |||||||||||||||||||||||||||||||||||||||||||||||
 |
FT93C66A-USR-B | Fremont Micro Devices Ltd | 0.1879 |
Min: 1 Mult: 1 |
0.00000000 | 8 Weeks | Tube | 2013 | Active | 1 (Unlimited) | ROHS3 Compliant | 8-SOIC (0.154, 3.90mm Width) | Surface Mount | -40°C~85°C TA | EEPROM | 8-SOP | 4Kb 512 x 8 256 x 16 | Non-Volatile | 1.8V~5.5V | 2MHz | EEPROM | SPI | 10ms | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
M25P05-AVMP6TG TR | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tape & Reel (TR) | 2008 | Obsolete | 3 (168 Hours) | ROHS3 Compliant | 8-VDFN Exposed Pad | Surface Mount | -40°C~85°C TA | FLASH - NOR | M25P05-A | 8-VDFPN (6x5) (MLP8) | 512Kb 64K x 8 | Non-Volatile | 2.7V~3.6V | 50MHz | FLASH | SPI | 15ms, 5ms | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
CY7C1413UV18-300BZC | Rochester Electronics, LLC | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tray | Obsolete | 3 (168 Hours) | Non-RoHS Compliant | 165-LBGA | Surface Mount | 0°C~70°C TA | SRAM - Synchronous, QDR II | 165-FBGA (13x15) | 36Mb 2M x 18 | Volatile | 1.7V~1.9V | 300MHz | SRAM | Parallel | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MT42L128M64D4KJ-3 IT:A | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Bulk | 2012 | Obsolete | 3 (168 Hours) | 216 | 1 | 12mm | ROHS3 Compliant | SELF REFRESH; IT ALSO REQUIRES 1.2V NOM | 216-VFBGA | 12mm | Surface Mount | -25°C~85°C TC | SDRAM - Mobile LPDDR2 | SYNCHRONOUS | 1mm | 1 | BOTTOM | 1.8V | MT42L128M64 | YES | 0.4mm | S-PBGA-B216 | 1.7V | 1.95V | 8Gb 128M x 64 | Volatile | 1.14V~1.3V | 128MX64 | 64 | 8589934592 bit | 333MHz | MULTI BANK PAGE BURST | DRAM | Parallel | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
W631GG6MB15I TR | Winbond Electronics | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 10 Weeks | Tape & Reel (TR) | 2017 | Active | 3 (168 Hours) | ROHS3 Compliant | 96-VFBGA | Surface Mount | -40°C~95°C TC | SDRAM - DDR3 | 20ns | 1Gb 64M x 16 | Volatile | 1.425V~1.575V | 667MHz | DRAM | Parallel | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
MT53B256M32D1DS-062 AIT:C TR | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tape & Reel (TR) | Not For New Designs | 3 (168 Hours) | ROHS3 Compliant | 200-WFBGA | Surface Mount | -40°C~95°C TC | SDRAM - Mobile LPDDR4 | 8Gb 256M x 32 | Volatile | 1.1V | 1600MHz | DRAM | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
MT40A256M16GE-075E AUT:B TR | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 6 Weeks | Tape & Reel (TR) | Last Time Buy | 3 (168 Hours) | ROHS3 Compliant | 96-TFBGA | Surface Mount | -40°C~125°C TC | SDRAM - DDR4 | 4Gb 256M x 16 | Volatile | 1.14V~1.26V | 1.33GHz | DRAM | Parallel | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
AT28C010-12FM/883 | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 23 Weeks | Surface Mount | Tube | 2003 | yes | Active | 3 (168 Hours) | 32 | 5V | 20.85mm | ROHS3 Compliant | Contains Lead | Lead, Tin | 32 | AUTOMATIC WRITE; DATA RETENTION: 10 YEARS | 32-CFlatpack | 1 Mb | 120GHz | 12.2mm | Surface Mount | -55°C~125°C TC | CMOS | ASYNCHRONOUS | 3.05mm | 1 | 80mA | e0 | Tin/Lead (Sn/Pb) | DUAL | 240 | 5V | 30 | AT28C010 | 1.27mm | Not Qualified | 5V | 3-STATE | 120ns | MIL-STD-883 | 1Mb 128K x 8 | Non-Volatile | 4.5V~5.5V | 128KX8 | 8 | 0.0003A | 10000 Write/Erase Cycles | 10ms | 5V | YES | YES | NO | 128words | EEPROM | Parallel | 10ms | |||||||||||||||||||||||||||||||||||||||||||
|
W632GG6NB-15 | Winbond Electronics | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 10 Weeks | Tray | Active | 3 (168 Hours) | ROHS3 Compliant | 96-VFBGA | Surface Mount | 0°C~95°C TC | SDRAM - DDR3 | 20ns | 2Gb 128M x 16 | Volatile | 1.425V~1.575V | 667MHz | DRAM | Parallel | 15ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
STK11C68-L45 | Cypress Semiconductor Corp | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tube | 2005 | Obsolete | 3 (168 Hours) | 28 | EAR99 | 13.97mm | Non-RoHS Compliant | 28-LCC | not_compliant | 8.89mm | Surface Mount | 0°C~70°C TA | NVSRAM (Non-Volatile SRAM) | ASYNCHRONOUS | 2.29mm | 8542.32.00.41 | 1 | e0 | QUAD | NOT SPECIFIED | 5V | NOT SPECIFIED | STK11C68 | 28 | YES | 1.27mm | R-CQCC-N28 | 4.5V | SRAMs | Not Qualified | 5V | 5.5V | 64Kb 8K x 8 | Non-Volatile | 0.065mA | 4.5V~5.5V | 8KX8 | 8 | 65536 bit | 0.02A | 45 ns | NVSRAM | Parallel | 45ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
STK11C68-SF25TR | Cypress Semiconductor Corp | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Surface Mount | Tape & Reel (TR) | 2005 | Obsolete | 3 (168 Hours) | 70°C | 0°C | 5V | Non-RoHS Compliant | 28 | 28-SOIC (0.342, 8.69mm Width) | Parallel | 5.5V | 4.5V | 64 kb | Surface Mount | 0°C~70°C TA | NVSRAM (Non-Volatile SRAM) | 90mA | STK11C68 | 28-SOIC | 25ns | 64Kb 8K x 8 | Non-Volatile | 4.5V~5.5V | 8b | 8b | NVSRAM | Parallel | 25ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
S29GL01GT10DHI010 | Cypress Semiconductor Corp | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 13 Weeks | Tray | 2016 | GL-T | Active | 3 (168 Hours) | 64 | 9mm | ROHS3 Compliant | 64-LBGA | 9mm | Surface Mount | -40°C~85°C TA | FLASH - NOR | ASYNCHRONOUS | 1.4mm | 8542.32.00.51 | 1 | BOTTOM | 3V | YES | 1mm | S-PBGA-B64 | 2.7V | 3.6V | 100ns | 1Gb 128M x 8 | Non-Volatile | 2.7V~3.6V | 64MX16 | 16 | 1073741824 bit | 2.7V | FLASH | Parallel | 60ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MT53D1024M32D4DT-053 AIT:D TR | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 6 Weeks | Tape & Reel (TR) | Active | 3 (168 Hours) | ROHS3 Compliant | 200-VFBGA | Surface Mount | -40°C~95°C TC | SDRAM - Mobile LPDDR4 | 32Gb 1G x 32 | Volatile | 1.1V | 1866MHz | DRAM | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
TC58NVG0S3HTA00 | Toshiba | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Surface Mount | 2012 | Active | 48 | 70°C | 0°C | 3.3V | 18.4mm | RoHS Compliant | TFSOP | Parallel | 3.6V | 2.7V | 1 Gb | 12mm | CMOS | ASYNCHRONOUS | 1.2mm | 1 | DUAL | GULL WING | 3.3V | 48 | COMMERCIAL | 0.5mm | R-PDSO-G48 | EEPROM, NAND, SLC NAND | 128MX8 | 8 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
TC58NVG2S0HBAI4 | Toshiba | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 4 Weeks | 2005 | Active | 63 | 85°C | -40°C | 11mm | RoHS Compliant | 63 | TFBGA | Parallel | 9mm | CMOS | ASYNCHRONOUS | 1mm | 1 | BOTTOM | BALL | 3.3V | 63 | INDUSTRIAL | YES | 0.8mm | 2.7V | 3.6V | EEPROM, NAND | 512MX8 | 8 | 4294967296 bit | 3.3V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
S34MS02G104BHV013 | SkyHigh Memory Limited | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tape & Reel (TR) | Obsolete | 3 (168 Hours) | 63 | 11mm | 9mm | CMOS | ASYNCHRONOUS | 1mm | 1 | BOTTOM | BALL | NOT SPECIFIED | 1.8V | NOT SPECIFIED | INDUSTRIAL | YES | 0.8mm | R-PBGA-B63 | 1.7V | 105°C | -40°C | 1.95V | 128MX16 | 16 | 2147483648 bit | FLASH | PARALLEL | 1.8V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IDT71V547S90PFI | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 2015 | 3 (168 Hours) | 100 | 3A991.B.2.A | 85°C | -40°C | 20mm | Non-RoHS Compliant | FLOW-THROUGH ARCHITECTURE | LQFP | Parallel | not_compliant | 14mm | CMOS | SYNCHRONOUS | 1.6mm | 8542.32.00.41 | 1 | e0 | Tin/Lead (Sn85Pb15) | QUAD | GULL WING | 240 | 3.3V | 20 | 100 | INDUSTRIAL | YES | 0.65mm | R-PQFP-G100 | 3.135V | SRAMs | Not Qualified | 3.3V | 3.465V | 3-STATE | RAM, SRAM | 0.235mA | 128KX36 | 36 | 4718592 bit | 83MHz | 0.045A | 9 ns | COMMON | 3.14V |
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R1LV5256ESP-7SI#S0 Renesas Electronics America
Surface Mount 28 Pin Memory IC R1LV5256E 256 kb kb 25mA mA 8b b
Price: 5.0925
RFQ -
71V016SA20BF Integrated Device Technology (IDT)
Surface Mount Memory IC 1 Mb kb 7mm mm 120mA mA 16b b
Price: 0.0000
RFQ -
S25FL512SAGBHBA13 Cypress Semiconductor Corp
Automotive, AEC-Q100, FL-S Memory IC Automotive, AEC-Q100, FL-S Series 8mm mm
Price: 0.0000
RFQ -
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71T75802S100BGGI8 Integrated Device Technology (IDT)
119 Pin Memory IC 18 Mb kb 14mm mm
Price: 0.0000
RFQ -
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24LC512T-E/ST14 Microchip Technology
3/5V V Surface Mount 14 Pin Memory IC 24LC512 512 kb kb 5mm mm 5mA mA
Price: 0.0000
RFQ -
BR24T04FVJ-WE2 ROHM Semiconductor
1.8/5V V Surface Mount Memory IC BR24T04 4 kb kb 3mm mm
Price: 0.0000
RFQ -
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70V9079L12PF8 Integrated Device Technology (IDT)
Surface Mount 100 Pin Memory IC 256 kb kb 14mm mm 205mA mA 8b b
Price: 0.0000
RFQ -
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AT28C010-12FM/883 Microchip Technology
5V V Surface Mount Memory IC AT28C010 1 Mb kb 20.85mm mm 80mA mA
Price: 0.0000
RFQ -
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STK11C68-SF25TR Cypress Semiconductor Corp
Surface Mount Memory IC STK11C68 64 kb kb 90mA mA 8b b
Price: 0.0000
RFQ -
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IDT71V547S90PFI Integrated Device Technology (IDT)
3.3V V 100 Pin Memory IC 20mm mm
Price: 0.0000
RFQ
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