Items : %s%s
Memory
Contact Plating
- Tin
ECCN Code
- 3A991.B.1.A
- EAR99
Factory Lead Time
- 11 Weeks
- 4 Weeks
- 5 Weeks
- 6 Weeks
- 7 Weeks
- 8 Weeks
JESD-609 Code
- e3
- e4
Manufacturer Package Identifier
- 24AA256-I/P
Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- 1 (Unlimited)
- 3 (168 Hours)
Mount
- Surface Mount
- Through Hole
Mounting Type
- Surface Mount
- Through Hole
Number of Pins
- 28
- 3
- 32
- 5
- 8
Number of Terminations
- 28
- 3
- 32
- 5
- 8
Operating Temperature
- -40°C~85°C TA
- 0°C~70°C TA
Package / Case
- 28-DIP (0.600, 15.24mm)
- 32-DIP (0.600, 15.24mm)
- 32-LCC (J-Lead)
- 32-TFSOP (0.488, 12.40mm Width)
- 8-DIP (0.300, 7.62mm)
- 8-SOIC (0.154, 3.90mm Width)
- 8-SOIC (0.209, 5.30mm Width)
- 8-TSSOP, 8-MSOP (0.118, 3.00mm Width)
- SC-74A, SOT-753
- TO-226-3, TO-92-3 (TO-226AA)
Packaging
- Bulk
- Tape & Reel (TR)
- Tray
- Tube
Part Status
- Active
- Obsolete
Pbfree Code
- yes
Published
- 1995
- 1997
- 2000
- 2002
- 2003
- 2004
- 2005
- 2007
- 2008
- 2009
- 2013
Series
- MoBL®
- SST39 MPF™
Surface Mount
- NO
- YES
Terminal Finish
- Matte Tin (Sn)
- Matte Tin (Sn) - annealed
- Nickel/Palladium/Gold (Ni/Pd/Au)
Termination
- SMD/SMT
- Through Hole
Weight
- 453.59237mg
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Datasheet | Factory Lead Time | Mount | Packaging | Published | Series | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | ECCN Code | Max Operating Temperature | Min Operating Temperature | Operating Supply Voltage | Number of Ports | Length | RoHS Status | Lead Free | Contact Plating | Radiation Hardening | Number of Pins | Additional Feature | Package / Case | Interface | Max Supply Voltage | REACH SVHC | Min Supply Voltage | Density | Frequency | Width | Thickness | Mounting Type | Operating Temperature | Voltage - Rated DC | Technology | Operating Mode | Height Seated (Max) | HTS Code | Number of Functions | Nominal Supply Current | Max Frequency | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Supply Voltage | Time@Peak Reflow Temperature-Max (s) | Base Part Number | Pin Count | Temperature Grade | Surface Mount | Terminal Pitch | JESD-30 Code | Supply Voltage-Min (Vsup) | Subcategory | Qualification Status | Power Supplies | Supply Voltage-Max (Vsup) | Voltage | Supplier Device Package | Output Characteristics | Logic Function | Access Time | Memory Size | Memory Type | Address Bus Width | Supply Current-Max | Voltage - Supply | Organization | Memory Width | Memory Density | Sync/Async | Time Format | Data Bus Width | Parallel/Serial | Clock Frequency | Standby Current-Max | Access Time (Max) | Word Size | Alternate Memory Width | Data Retention Time-Min | Endurance | Write Protection | Write Cycle Time-Max (tWC) | I/O Type | Programming Voltage | Data Polling | Toggle Bit | Command User Interface | Number of Sectors/Size | Page Size | Ready/Busy | Common Flash Interface | Serial Bus Type | I2C Control Byte | Refresh Cycles | Standby Voltage-Min | Memory Format | Memory Interface | Write Cycle Time - Word, Page | Sector Size | Sequential Burst Length | Interleaved Burst Length |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IS42S32160A-75BL | ISSI, Integrated Silicon Solution Inc | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Surface Mount | Tray | yes | Obsolete | 3 (168 Hours) | 90 | EAR99 | 3.3V | 1 | 13mm | RoHS Compliant | 90 | AUTO/SELF REFRESH | 90-LFBGA | 512 Mb | Surface Mount | 0°C~70°C TA | SDRAM | SYNCHRONOUS | 1.45mm | 8542.32.00.28 | 1 | 185mA | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | BOTTOM | 260 | 3.3V | 40 | 90 | 0.8mm | 3V | Not Qualified | 3.6V | 3-STATE | 6ns | 512Mb 16M x 32 | Volatile | 15b | 3V~3.6V | 16MX32 | 32 | 32b | 133MHz | 0.0024A | COMMON | 8192 | DRAM | Parallel | 1248FP | 1248 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
AT25160-10PC | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tube | 2001 | Obsolete | 1 (Unlimited) | Non-RoHS Compliant | 8-DIP (0.300, 7.62mm) | Through Hole | 0°C~70°C TA | EEPROM | AT25160 | 8-PDIP | 16Kb 2K x 8 | Non-Volatile | 4.5V~5.5V | 3MHz | EEPROM | SPI | 5ms | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
.png "MT53D512M64D4RQ-053 WT ES:E TR") |
MT53D512M64D4RQ-053 WT ES:E TR | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tape & Reel (TR) | Active | 556-WFBGA | Surface Mount | -30°C~85°C TC | SDRAM - Mobile LPDDR4 | 556-WFBGA (12.4x12.4) | 32Gb 512M x 64 | Volatile | 1.1V | 1866MHz | DRAM | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
M28W160ECB70ZB6U TR | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tape & Reel (TR) | 2004 | Obsolete | 3 (168 Hours) | ROHS3 Compliant | 46-TFBGA | Surface Mount | -40°C~85°C TA | FLASH - NOR | M28W160 | 16Mb 1M x 16 | Non-Volatile | 2.7V~3.6V | FLASH | Parallel | 70ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
S25FL064LABNFB040 | Cypress Semiconductor Corp | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 13 Weeks | Tray | Automotive, AEC-Q100, FL-L | Active | 3 (168 Hours) | 8 | 4mm | ROHS3 Compliant | IT IS ALSO CONFIGURED AS 64M X 1 | 8-UDFN Exposed Pad | 4mm | Surface Mount | -40°C~105°C TA | FLASH - NOR | SYNCHRONOUS | 0.6mm | 8542.32.00.51 | 1 | DUAL | NOT SPECIFIED | 3V | NOT SPECIFIED | YES | 0.8mm | S-PDSO-N8 | 2.7V | 3.6V | 64Mb 8M x 8 | Non-Volatile | 2.7V~3.6V | 16MX4 | 4 | 67108864 bit | SERIAL | 108MHz | 2 | 3V | FLASH | SPI - Quad I/O, QPI | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
S79FL256SDSMFVG03 | Cypress Semiconductor Corp | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 11 Weeks | Tape & Reel (TR) | FL-S | Active | 3 (168 Hours) | 16 | 10.3mm | ROHS3 Compliant | 16-SOIC (0.295, 7.50mm Width) | 7.5mm | Surface Mount | -40°C~105°C TA | FLASH - NOR | SYNCHRONOUS | 2.65mm | 8542.32.00.51 | 1 | DUAL | NOT SPECIFIED | 3V | NOT SPECIFIED | YES | 1.27mm | R-PDSO-G16 | 2.7V | 3.6V | 256Mb 32M x 8 | Non-Volatile | 2.7V~3.6V | 32MX8 | 8 | 268435456 bit | SERIAL | 80MHz | 3V | FLASH | SPI - Quad I/O | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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NAND512R3A2SZAXE | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 4 Weeks | Surface Mount | Tray | 2004 | Obsolete | 3 (168 Hours) | 63 | 1.8V | 11mm | ROHS3 Compliant | No | 63 | 63-TFBGA | 512 Mb | Surface Mount | -40°C~85°C TA | 3.3V | FLASH - NAND | 1.05mm | 1 | 15mA | BOTTOM | 1.8V | NAND512 | 0.8mm | 3.3V | 512Mb 64M x 8 | Non-Volatile | 26b | 1.7V~1.95V | 64MX8 | 8 | Asynchronous | 0.00005A | 45 ns | 8b | NO | NO | YES | 4K | 528B | YES | FLASH | Parallel | 50ns | 16K | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
IS65WV1288FBLL-45HLA3 | ISSI, Integrated Silicon Solution Inc | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tray | Active | 3 (168 Hours) | ROHS3 Compliant | 32-TFSOP (0.465, 11.80mm Width) | Surface Mount | -40°C~125°C TA | SRAM - Asynchronous | 1Mb 128K x 8 | Volatile | 2.2V~3.6V | SRAM | Parallel | 45ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IS43TR16128B-125KBL | ISSI, Integrated Silicon Solution Inc | 3.9946 |
Min: 1 Mult: 1 |
0.00000000 | 6 Weeks | Tray | Active | 3 (168 Hours) | 96 | 1 | 13mm | ROHS3 Compliant | AUTO/SELF REFRESH | 96-TFBGA | 9mm | Surface Mount | 0°C~95°C TC | SDRAM - DDR3 | ASYNCHRONOUS | 1.2mm | 1 | BOTTOM | 1.5V | YES | 0.8mm | R-PBGA-B96 | 1.425V | Not Qualified | 1.5V | 1.575V | 3-STATE | 20ns | 2Gb 128M x 16 | Volatile | 0.33mA | 1.425V~1.575V | 128MX16 | 16 | 2147483648 bit | 800MHz | 0.014A | COMMON | 8192 | DRAM | Parallel | 15ns | 48 | 48 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
S29GL256P11TAIV10 | Cypress Semiconductor Corp | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tray | GL-P | Obsolete | 3 (168 Hours) | 56 | 3A991.B.1.A | 18.4mm | ROHS3 Compliant | No | 56-TFSOP (0.724, 18.40mm Width) | 256 Mb | 14mm | Surface Mount | -40°C~85°C TA | FLASH - NOR | 1.2mm | 8542.32.00.51 | 1 | e0 | Tin/Lead (Sn/Pb) | DUAL | 240 | 3V | 30 | YES | 0.5mm | R-PDSO-G56 | 2.7V | 1.8/3.33/3.3V | 3.6V | 256Mb 32M x 8 | Non-Volatile | 0.11mA | 1.65V~3.6V | 256MX1 | 1 | 0.000005A | 110 ns | 8 | 3V | YES | YES | YES | 256 | 8/16words | YES | YES | FLASH | Parallel | 110ns | 128K | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IDT71V67602S166BQGI | Renesas Electronics America Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tray | Obsolete | 3 (168 Hours) | 165-TBGA | Surface Mount | -40°C~85°C TA | SRAM - Synchronous, SDR | IDT71V67602 | 165-CABGA (13x15) | 3.5ns | 9Mb 256K x 36 | Volatile | 3.135V~3.465V | 166MHz | SRAM | Parallel | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
CY14V104LA-BA25XIT | Cypress Semiconductor Corp | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 10 Weeks | Surface Mount | Tape & Reel (TR) | 2007 | Active | 3 (168 Hours) | 48 | 3A991.B.2.A | 3.3V | 10mm | ROHS3 Compliant | 48 | 48-TFBGA | 4 Mb | Surface Mount | -40°C~85°C TA | NVSRAM (Non-Volatile SRAM) | ASYNCHRONOUS | 1.2mm | 8542.32.00.41 | 1 | 70mA | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | BOTTOM | 260 | 3.3V | 30 | 48 | 0.75mm | 3V | SRAMs | Not Qualified | 3.6V | 4Mb 512K x 8 | Non-Volatile | 2.7V~3.6V | 512KX8 | 8 | 8b | 0.008A | 25 ns | 8b | NVSRAM | Parallel | 25ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
S29PL127J60TFI130D | Cypress Semiconductor Corp | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tray | PL-J | Obsolete | 3 (168 Hours) | ROHS3 Compliant | 56-TFSOP (0.724, 18.40mm Width) | Surface Mount | -40°C~85°C | FLASH - NOR | 128M 8M x 16 | Non-Volatile | 2.7V~3.6V | FLASH | Parallel | 60ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
CY14B104K-ZS25XIT | Cypress Semiconductor Corp | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2012 | Active | 3 (168 Hours) | 44 | 3A991.B.2.A | 3.3V | 18.415mm | ROHS3 Compliant | Gold, Tin | 44 | 44-TSOP (0.400, 10.16mm Width) | 4 Mb | Surface Mount | -40°C~85°C TA | NVSRAM (Non-Volatile SRAM) | ASYNCHRONOUS | 1.194mm | 8542.32.00.41 | 1 | 70mA | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | DUAL | 260 | 3V | 30 | CY14B104 | 44 | 0.8mm | 2.7V | SRAMs | Not Qualified | 3.6V | Clock | 4Mb 512K x 8 | Non-Volatile | 2.7V~3.6V | 512KX8 | 8 | HH:MM:SS | 8b | 0.005A | 25 ns | 8b | NVSRAM | Parallel | 25ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
MT52L512M32D2PF-093 WT:B | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 9 Weeks | Tray | Last Time Buy | 178-VFBGA | Surface Mount | -30°C~85°C TC | SDRAM - Mobile LPDDR3 | 16Gb 512M x 32 | Volatile | 1.2V | 1067MHz | DRAM | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
AT28C64-20PI | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tube | 1999 | Obsolete | 1 (Unlimited) | Non-RoHS Compliant | 28-DIP (0.600, 15.24mm) | Through Hole | -40°C~85°C TC | EEPROM | AT28C64 | 28-PDIP | 200ns | 64Kb 8K x 8 | Non-Volatile | 4.5V~5.5V | EEPROM | Parallel | 1ms | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IS25LP512M-RMLE | ISSI, Integrated Silicon Solution Inc | 7.4131 |
Min: 1 Mult: 1 |
0.00000000 | 8 Weeks | Tube | Active | 3 (168 Hours) | 16 | 3A991.B.1.A | 10.31mm | ROHS3 Compliant | 16-SOIC (0.295, 7.50mm Width) | 7.49mm | Surface Mount | -40°C~105°C TA | FLASH - NOR | SYNCHRONOUS | 2.65mm | 8542.32.00.51 | 1 | e3 | Tin (Sn) | DUAL | 260 | 3V | 10 | YES | 1.27mm | R-PDSO-G16 | 2.3V | 3.6V | 512Mb 64M x 8 | Non-Volatile | 2.3V~3.6V | 64MX8 | 8 | 536870912 bit | SERIAL | 133MHz | 1 | 3V | FLASH | SPI - Quad I/O, QPI, DTR | 1.6ms | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
CY7C1414LV18-250BZXC | Cypress Semiconductor Corp | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tray | Last Time Buy | 3 (168 Hours) | ROHS3 Compliant | 165 | 165-LBGA | Surface Mount | 0°C~70°C TA | SRAM - Synchronous, QDR II | 36Mb 1M x 36 | Volatile | 1.7V~1.9V | 250MHz | SRAM | Parallel | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
AT25080A-10PU-1.8 | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Through Hole | Tube | Obsolete | 1 (Unlimited) | 85°C | -40°C | 5V | ROHS3 Compliant | Lead Free | 8 | 8-DIP (0.300, 7.62mm) | SPI, Serial | 5.5V | 1.8V | 8 kb | 20MHz | Through Hole | -40°C~85°C TA | EEPROM | 10mA | 5MHz | AT25080 | 8-PDIP | 80 ns | 8Kb 1K x 8 | Non-Volatile | 1.8V~5.5V | 20MHz | EEPROM | SPI | 5ms | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
70914S20PF8 | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Surface Mount | 2010 | Active | 70°C | 0°C | 5V | 2 | 14mm | RoHS Compliant | Contains Lead | No | 80 | TQFP | Parallel | 5.5V | 4.5V | 36 kb | 50MHz | 14mm | 1.4mm | 290mA | 20 ns | 4.5kB | RAM, SDR, SRAM | 24b | Synchronous | 9b | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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EDF8164A3MC-GD-F-D | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 9 Weeks | Tray | Obsolete | 3 (168 Hours) | ROHS3 Compliant | FBGA | -30°C~85°C TC | SDRAM - Mobile LPDDR3 | 8Gb 128M x 64 | Volatile | 1.14V~1.95V | 800MHz | DRAM | Parallel | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IS61LPS25636A-200TQLI | ISSI, Integrated Silicon Solution Inc | 9.6450 |
Min: 1 Mult: 1 |
0.00000000 | 12 Weeks | Tray | yes | Active | 3 (168 Hours) | 100 | 3A991.B.2.A | 3.3V | 4 | 20mm | ROHS3 Compliant | No | 100 | PIPELINED ARCHITECTURE | 100-LQFP | No SVHC | 9 Mb | Surface Mount | -40°C~85°C TA | SRAM - Synchronous, SDR | 1.6mm | 1 | 275mA | e3 | Matte Tin (Sn) - annealed | QUAD | 260 | 3.3V | 10 | 100 | YES | 0.65mm | 3.135V | 3-STATE | 3.1ns | 9Mb 256K x 36 | Volatile | 18b | 3.135V~3.465V | 256KX36 | 36 | Synchronous | 200MHz | 0.105A | 36b | COMMON | SRAM | Parallel | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
70V37L20PF8 | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | 2009 | Active | 70°C | 0°C | 3.3V | 2 | 14mm | RoHS Compliant | Contains Lead | No | 100 | TQFP | Parallel | 3.6V | 3V | 576 kb | 14mm | 1.4mm | 20 ns | 72kB | RAM, SDR, SRAM | 15b | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
MT29F512G08CKCBBH7-6ITC:B | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tray | 2016 | Obsolete | 3 (168 Hours) | 3.3V | ROHS3 Compliant | 152-TBGA | Surface Mount | -40°C~85°C TA | FLASH - NAND | 152-TBGA (14x18) | 512Gb 64G x 8 | Non-Volatile | 2.7V~3.6V | 166MHz | FLASH | Parallel | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
7142LA100C | Renesas Electronics America Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 13 Weeks | Tube | Active | 1 (Unlimited) | Non-RoHS Compliant | 48-DIP (0.600, 15.24mm) | Through Hole | 0°C~70°C TA | SRAM - Dual Port, Asynchronous | IDT7142 | 16Kb 2K x 8 | Volatile | 4.5V~5.5V | SRAM | Parallel | 100ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
MT47H64M8CB-37V:B TR | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tape & Reel (TR) | 2008 | Obsolete | 5 (48 Hours) | ROHS3 Compliant | 60-FBGA | Surface Mount | 0°C~85°C TC | SDRAM - DDR2 | MT47H64M8 | 500ps | 512Mb 64M x 8 | Volatile | 1.7V~1.9V | 267MHz | DRAM | Parallel | 15ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IDT71V424L15PH | Renesas Electronics America Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tube | Obsolete | 3 (168 Hours) | Non-RoHS Compliant | 44-TSOP (0.400, 10.16mm Width) | Surface Mount | 0°C~70°C TA | SRAM - Asynchronous | IDT71V424 | 44-TSOP II | 15ns | 4Mb 512K x 8 | Volatile | 3V~3.6V | SRAM | Parallel | 15ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
71V67603S133BQG | Renesas Electronics America Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 13 Weeks | Tray | Active | 3 (168 Hours) | ROHS3 Compliant | 165-TBGA | Surface Mount | 0°C~70°C TA | SRAM - Synchronous, SDR | IDT71V67603 | 165-CABGA (13x15) | 4.2ns | 9Mb 256K x 36 | Volatile | 3.135V~3.465V | 133MHz | SRAM | Parallel | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
71V416L10BE8 | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 2014 | no | 4 (72 Hours) | 48 | 70°C | 0°C | 3.3V | 1 | 9mm | RoHS Compliant | Contains Lead | No | 48 | TFBGA | Parallel | 3.6V | 3V | 4 Mb | 9mm | 1.2mm | CMOS | 1 | e0 | TIN LEAD | BOTTOM | BALL | 225 | 3.3V | 48 | COMMERCIAL | YES | 0.75mm | SRAMs | 3-STATE | 10 ns | 512kB | RAM, SDR, SRAM - Asynchronous | 18b | COMMON | 3V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
24FC64-I/MC | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Surface Mount | Tube | 2007 | yes | Active | 1 (Unlimited) | 8 | EAR99 | 5V | 3mm | ROHS3 Compliant | Lead Free | Tin | No | 8 | 8-VFDFN Exposed Pad | I2C, Serial | 64 kb | 2mm | Surface Mount | -40°C~85°C TA | CMOS | 1mm | 1 | 3mA | e3 | DUAL | 260 | 2.5V | 40 | 24FC64 | 8 | 0.5mm | 1.7V | 400ns | 64Kb 8K x 8 | Non-Volatile | 1.7V~5.5V | 8 | 1MHz | 0.000001A | 200 | 1000000 Write/Erase Cycles | HARDWARE | 5ms | I2C | 1010DDDR | EEPROM | I2C | 5ms |
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IS42S32160A-75BL ISSI, Integrated Silicon Solution Inc
Surface Mount 90 Pin Memory IC 512 Mb kb 13mm mm 185mA mA
Price: 0.0000
RFQ -
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S25FL064LABNFB040 Cypress Semiconductor Corp
Automotive, AEC-Q100, FL-L Memory IC Automotive, AEC-Q100, FL-L Series 4mm mm
Price: 0.0000
RFQ -
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NAND512R3A2SZAXE Micron Technology Inc.
Surface Mount Memory IC NAND512 512 Mb kb 11mm mm 15mA mA 8b b
Price: 0.0000
RFQ -
-
IS43TR16128B-125KBL ISSI, Integrated Silicon Solution Inc
1.5V V Memory IC 13mm mm
Price: 3.9946
RFQ -
S29GL256P11TAIV10 Cypress Semiconductor Corp
1.8/3.33/3.3V V GL-P Memory IC GL-P Series 256 Mb kb 18.4mm mm
Price: 0.0000
RFQ -
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CY14V104LA-BA25XIT Cypress Semiconductor Corp
Surface Mount 48 Pin Memory IC 4 Mb kb 10mm mm 70mA mA 8b b
Price: 0.0000
RFQ -
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CY14B104K-ZS25XIT Cypress Semiconductor Corp
Surface Mount 44 Pin Memory IC CY14B104 4 Mb kb 18.415mm mm 70mA mA 8b b
Price: 0.0000
RFQ -
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AT25080A-10PU-1.8 Microchip Technology
Through Hole Memory IC AT25080 8 kb kb 10mA mA
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IS61LPS25636A-200TQLI ISSI, Integrated Silicon Solution Inc
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24FC64-I/MC Microchip Technology
Surface Mount 8 Pin Memory IC 24FC64 64 kb kb 3mm mm 3mA mA
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