Items : %s%s
Memory
Contact Plating
- Tin
ECCN Code
- 3A991.B.1.A
- EAR99
Factory Lead Time
- 11 Weeks
- 4 Weeks
- 5 Weeks
- 6 Weeks
- 7 Weeks
- 8 Weeks
JESD-609 Code
- e3
- e4
Manufacturer Package Identifier
- 24AA256-I/P
Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- 1 (Unlimited)
- 3 (168 Hours)
Mount
- Surface Mount
- Through Hole
Mounting Type
- Surface Mount
- Through Hole
Number of Pins
- 28
- 3
- 32
- 5
- 8
Number of Terminations
- 28
- 3
- 32
- 5
- 8
Operating Temperature
- -40°C~85°C TA
- 0°C~70°C TA
Package / Case
- 28-DIP (0.600, 15.24mm)
- 32-DIP (0.600, 15.24mm)
- 32-LCC (J-Lead)
- 32-TFSOP (0.488, 12.40mm Width)
- 8-DIP (0.300, 7.62mm)
- 8-SOIC (0.154, 3.90mm Width)
- 8-SOIC (0.209, 5.30mm Width)
- 8-TSSOP, 8-MSOP (0.118, 3.00mm Width)
- SC-74A, SOT-753
- TO-226-3, TO-92-3 (TO-226AA)
Packaging
- Bulk
- Tape & Reel (TR)
- Tray
- Tube
Part Status
- Active
- Obsolete
Pbfree Code
- yes
Published
- 1995
- 1997
- 2000
- 2002
- 2003
- 2004
- 2005
- 2007
- 2008
- 2009
- 2013
Series
- MoBL®
- SST39 MPF™
Surface Mount
- NO
- YES
Terminal Finish
- Matte Tin (Sn)
- Matte Tin (Sn) - annealed
- Nickel/Palladium/Gold (Ni/Pd/Au)
Termination
- SMD/SMT
- Through Hole
Weight
- 453.59237mg
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Datasheet | Factory Lead Time | Mount | Packaging | Published | Series | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | ECCN Code | Max Operating Temperature | Min Operating Temperature | Operating Supply Voltage | Number of Ports | Length | RoHS Status | Lead Free | Contact Plating | Radiation Hardening | Number of Pins | Additional Feature | Package / Case | Interface | Max Supply Voltage | Reach Compliance Code | Min Supply Voltage | Density | Frequency | Height | Width | Thickness | Mounting Type | Operating Temperature | Technology | Operating Supply Current | Operating Mode | Height Seated (Max) | HTS Code | Number of Functions | Nominal Supply Current | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Supply Voltage | Time@Peak Reflow Temperature-Max (s) | Base Part Number | Pin Count | Temperature Grade | Surface Mount | Terminal Pitch | JESD-30 Code | Supply Voltage-Min (Vsup) | Operating Temperature (Max) | Operating Temperature (Min) | Subcategory | Qualification Status | Power Supplies | Supply Voltage-Max (Vsup) | Voltage | Supplier Device Package | Output Characteristics | Access Time | Screening Level | Memory Size | Memory Type | Address Bus Width | Supply Current-Max | Voltage - Supply | Organization | Memory Width | Memory Density | Memory IC Type | Sync/Async | Data Bus Width | Parallel/Serial | Clock Frequency | Standby Current-Max | Access Time (Max) | Word Size | Alternate Memory Width | Data Retention Time-Min | Endurance | Write Protection | Write Cycle Time-Max (tWC) | I/O Type | Programming Voltage | Data Polling | Toggle Bit | Command User Interface | Number of Sectors/Size | Page Size | Ready/Busy | Common Flash Interface | Serial Bus Type | I2C Control Byte | Refresh Cycles | Access Mode | Standby Voltage-Min | Memory Format | Memory Interface | Write Cycle Time - Word, Page | Sector Size | Sequential Burst Length | Interleaved Burst Length | Boot Block |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
BR24C04-10TU-2.7 | ROHM Semiconductor | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Surface Mount | Tape & Reel (TR) | yes | Not For New Designs | 1 (Unlimited) | 8 | EAR99 | 5V | 4.3mm | ROHS3 Compliant | Copper, Tin | 8-TSSOP (0.173, 4.40mm Width) | 2-Wire, I2C, Serial | unknown | 4 kb | 2.9mm | Surface Mount | -40°C~85°C TA | CMOS | SYNCHRONOUS | 1.2mm | 8542.32.00.51 | 1 | e2 | TIN COPPER | DUAL | 260 | 3V | 10 | BR24C04 | 8 | 0.65mm | R-PDSO-G8 | 2.7V | Not Qualified | 900 ns | 4Kb 512 x 8 | Non-Volatile | 0.003mA | 2.7V~5.5V | 256X8 | 8 | 400kHz | 0.000004A | 100 | 1000000 Write/Erase Cycles | HARDWARE | 5ms | I2C | 1010DDMR | EEPROM | I2C | 5ms | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
DS1265W-100 | Maxim Integrated | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tube | 2010 | yes | Obsolete | 1 (Unlimited) | 36 | 3A991.B.2.A | 3.3V | Non-RoHS Compliant | Contains Lead | 36 | 36-DIP Module (0.600, 15.24mm) | 8 Mb | 100GHz | Through Hole | 0°C~70°C TA | NVSRAM (Non-Volatile SRAM) | 50mA | ASYNCHRONOUS | 8473.30.11.40 | 1 | e3 | Matte Tin (Sn) | DUAL | NOT SPECIFIED | 3.3V | NOT SPECIFIED | DS1265W | 36 | NO | 2.54mm | 3V | SRAMs | Not Qualified | 3.6V | 8Mb 1M x 8 | Non-Volatile | 0.05mA | 3V~3.6V | 1MX8 | 8 | 8b | 0.00015A | 100 ns | NVSRAM | Parallel | 100ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
DS1230Y-150+ | Maxim Integrated | 23.1034 |
Min: 1 Mult: 1 |
0.00000000 | download | 6 Weeks | Tube | 2002 | yes | Active | 1 (Unlimited) | 28 | EAR99 | ROHS3 Compliant | Lead Free | 28 | 28-DIP Module (0.600, 15.24mm) | not_compliant | Through Hole | 0°C~70°C TA | NVSRAM (Non-Volatile SRAM) | ASYNCHRONOUS | 8473.30.11.40 | 1 | e3 | Matte Tin (Sn) | DUAL | NOT SPECIFIED | 5V | NOT SPECIFIED | DS1230Y | 28 | NO | 2.54mm | 4.5V | SRAMs | Not Qualified | 5V | 5.5V | 256Kb 32K x 8 | Non-Volatile | 0.085mA | 4.5V~5.5V | 32KX8 | 8 | 262144 bit | 0.0006A | 150 ns | NVSRAM | Parallel | 150ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
.png "M29W040B90N1") |
M29W040B90N1 | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tray | 1998 | Obsolete | 3 (168 Hours) | 70°C | 0°C | ROHS3 Compliant | 32-TFSOP (0.724, 18.40mm Width) | Parallel | Surface Mount | 0°C~70°C TA | FLASH - NOR | M29W040 | 32-TSOP | 90ns | 4Mb 512K x 8 | Non-Volatile | 2.7V~3.6V | FLASH | Parallel | 90ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
MT47H32M16BN-3:D TR | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tape & Reel (TR) | 2006 | Obsolete | 3 (168 Hours) | ROHS3 Compliant | 84-TFBGA | Surface Mount | 0°C~85°C TC | SDRAM - DDR2 | MT47H32M16 | 84-FBGA (10x12.5) | 450ps | 512Mb 32M x 16 | Volatile | 1.7V~1.9V | 333MHz | DRAM | Parallel | 15ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
M29W640GB70ZA3E | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tray | 2015 | yes | Obsolete | 3 (168 Hours) | 48 | 3A991.B.1.A | 8mm | ROHS3 Compliant | No | 48 | BOTTOM BOOT BLOCK | 48-TFBGA | 64 Mb | 6mm | Surface Mount | -40°C~125°C TA | FLASH - NOR | 1.2mm | 8542.32.00.51 | 1 | 10mA | e1 | TIN SILVER COPPER | BOTTOM | 260 | 3V | 30 | M29W640 | 48 | YES | 0.8mm | 3/3.3V | 2.7V | 64Mb 8M x 8 4M x 16 | Non-Volatile | 2.7V~3.6V | 4MX16 | 16 | Asynchronous | 0.0001A | 70 ns | 8 | YES | YES | YES | 8127 | 4/8words | YES | YES | FLASH | Parallel | 70ns | 8K64K | BOTTOM | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
W9825G2JB-75 | Winbond Electronics | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 10 Weeks | Surface Mount | Tray | 2011 | Active | 3 (168 Hours) | 90 | EAR99 | 3.3V | 1 | 13mm | ROHS3 Compliant | 90 | AUTO/SELF REFRESH | 90-TFBGA | 256 Mb | Surface Mount | 0°C~70°C TA | SDRAM | SYNCHRONOUS | 1.2mm | 8542.32.00.24 | 1 | 140mA | BOTTOM | NOT SPECIFIED | 3.3V | NOT SPECIFIED | 90 | 0.8mm | 2.7V | Not Qualified | 3.6V | 5.4ns | 256Mb 8M x 32 | Volatile | 12b | 2.7V~3.6V | 8MX32 | 32 | 133MHz | 0.004A | COMMON | 4096 | DRAM | Parallel | 1248FP | 1248 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
TC58BYG0S3HBAI6 | Toshiba | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Surface Mount | 2012 | Active | 67 | 85°C | -40°C | 1.8V | 8mm | RoHS Compliant | No | 67 | Parallel, Serial | 1.95V | 1.7V | 1 Gb | 6.5mm | CMOS | 1mm | 1 | BOTTOM | BALL | 1.8V | INDUSTRIAL | 0.8mm | EEPROM, NAND, SLC NAND | 128MX8 | 8 | 2kB | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
6116SA35TDB | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 10 Weeks | Through Hole | Bulk | 2013 | no | Active | 1 (Unlimited) | 24 | 125°C | -55°C | 5V | 1 | 32.51mm | RoHS Compliant | Contains Lead | No | 24 | CDIP | Parallel | 5.5V | 4.5V | 16 kb | 7.62mm | 3.56mm | CMOS | 5.08mm | 1 | 90mA | e0 | Tin/Lead (Sn/Pb) | DUAL | 240 | 5V | 24 | MILITARY | 2.54mm | SRAMs | 5V | 3-STATE | 35 ns | MIL-STD-883 Class B | 2kB | RAM, SDR, SRAM - Asynchronous | 11b | 2KX8 | Asynchronous | 8b | COMMON | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
AS4C128M16D3LA-12BCN | Alliance Memory, Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tray | yes | Obsolete | 3 (168 Hours) | 96 | 1 | 13mm | Non-RoHS Compliant | AUTO/SELF REFRESH | 96-VFBGA | 8mm | Surface Mount | 0°C~95°C TC | SDRAM - DDR3L | SYNCHRONOUS | 1mm | 1 | BOTTOM | NOT SPECIFIED | 1.35V | NOT SPECIFIED | YES | 0.8mm | R-PBGA-B96 | 1.283V | 1.45V | 20ns | 2Gb 128M x 16 | Volatile | 1.283V~1.45V | 128MX16 | 16 | 2147483648 bit | 800MHz | DRAM | Parallel | 15ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IS25LD040-JVLE-TR | ISSI, Integrated Silicon Solution Inc | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tape & Reel (TR) | Obsolete | 3 (168 Hours) | 105°C | -40°C | 3.3V | RoHS Compliant | 8 | 8-SOIC (0.154, 3.90mm Width) | SPI, Serial | 3.6V | 2.3V | 4 Mb | 100MHz | Surface Mount | -40°C~105°C TA | FLASH | 8-VVSOP | 4Mb 512K x 8 | Non-Volatile | 19b | 2.3V~3.6V | 8b | 100MHz | 256B | FLASH | SPI | 5ms | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
CY7C1514V18-200BZC | Cypress Semiconductor Corp | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Surface Mount | Tray | 2003 | Obsolete | 3 (168 Hours) | 165 | 1.8V | 2 | 17mm | Non-RoHS Compliant | Contains Lead | 165 | PIPELINED ARCHITECTURE | 165-LBGA | not_compliant | 72 Mb | Surface Mount | 0°C~70°C TA | SRAM - Synchronous, QDR II | 1.4mm | 1 | 900mA | e0 | Tin/Lead (Sn/Pb) | BOTTOM | 220 | 1.8V | NOT SPECIFIED | CY7C1514 | 165 | 1mm | 1.7V | Not Qualified | 1.9V | 3-STATE | 450 ps | 72Mb 2M x 36 | Volatile | 21b | 1.7V~1.9V | 36 | Synchronous | 200MHz | 36b | SEPARATE | 1.7V | SRAM | Parallel | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
MT40A4G4HPR-075H:G TR | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tape & Reel (TR) | TwinDie™ | Obsolete | 3 (168 Hours) | ROHS3 Compliant | 0°C~95°C TC | SDRAM - DDR4 | 16Gb 4G x 4 | Volatile | 1.14V~1.26V | 1.333GHz | DRAM | Parallel | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
S29NS512P0PBJW000 | Rochester Electronics, LLC | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tray | Obsolete | 3 (168 Hours) | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
MT28F004B3VG-8 T TR | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tape & Reel (TR) | 2002 | Obsolete | 1 (Unlimited) | Non-RoHS Compliant | 40-TFSOP (0.724, 18.40mm Width) | Surface Mount | 0°C~70°C TA | FLASH - NOR | MT28F004B3 | 4Mb 512K x 8 | Non-Volatile | 3V~3.6V | FLASH | Parallel | 80ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
MT48LC8M16LFB4-75M:G TR | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tape & Reel (TR) | 2009 | Obsolete | 3 (168 Hours) | ROHS3 Compliant | 54-VFBGA | Surface Mount | 0°C~70°C TA | SDRAM - Mobile LPSDR | MT48LC8M16 | 5.4ns | 128Mb 8M x 16 | Volatile | 3V~3.6V | 133MHz | DRAM | Parallel | 15ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
SST39VF6402B-70-4I-EKE | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Surface Mount | Tray | 2000 | SST39 MPF™ | yes | Active | 3 (168 Hours) | 48 | 3A991.B.1.A | 3.3V | 18.5mm | ROHS3 Compliant | No | 48 | TOP BOOT BLOCK | 48-TFSOP (0.724, 18.40mm Width) | 64 Mb | 1.05mm | 12.2mm | Surface Mount | -40°C~85°C TA | CMOS | 8542.32.00.51 | 1 | 18mA | e3 | Matte Tin (Sn) - annealed | DUAL | 260 | 3V | 40 | SST39VF6402B | 48 | 0.5mm | 2.7V | 3.6V | 70ns | 64Mb 4M x 16 | Non-Volatile | 22b | 2.7V~3.6V | 4MX16 | Asynchronous | 16b | 0.00002A | 16b | 2.7V | YES | YES | YES | 2K | YES | FLASH | Parallel | 10μs | 2K | TOP | |||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IDT71V67803S133PF8 | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tape & Reel (TR) | 2009 | 3 (168 Hours) | 100 | 3A991.B.2.A | 70°C | 0°C | 20mm | Non-RoHS Compliant | PIPELINED ARCHITECTURE | LQFP | Parallel | not_compliant | 133MHz | 14mm | CMOS | SYNCHRONOUS | 1.6mm | 8542.32.00.41 | 1 | e0 | Tin/Lead (Sn85Pb15) | QUAD | GULL WING | 240 | 3.3V | 20 | 100 | COMMERCIAL | YES | 0.65mm | R-PQFP-G100 | 3.135V | SRAMs | Not Qualified | 3.3V | 3.465V | 3-STATE | RAM, SRAM | 0.26mA | 512KX18 | 18 | 9437184 bit | 0.05A | 4.2 ns | COMMON | 3.14V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
24LC64T-E/ST | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 8 Weeks | Surface Mount | Tape & Reel (TR) | 2005 | yes | Active | 1 (Unlimited) | 8 | EAR99 | 4.4mm | ROHS3 Compliant | Lead Free | Tin | No | 8 | DATA RETENTION > 200 YEARS; 1000000 ERASE/WRITE CYCLES GUARANTEED | 8-TSSOP (0.173, 4.40mm Width) | I2C, Serial | 64 kb | 3mm | Surface Mount | -40°C~125°C TA | CMOS | 1.2mm | 1 | 3mA | e3 | DUAL | 260 | 5V | 40 | 24LC64 | 8 | 0.65mm | 2.5V | 3/5V | 5.5V | 900ns | 64Kb 8K x 8 | Non-Volatile | 2.5V~5.5V | 8 | 400kHz | 0.000005A | 200 | 1000000 Write/Erase Cycles | HARDWARE | 5ms | I2C | 1010DDDR | EEPROM | I2C | 5ms | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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M29W128GH70N3F TR | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tape & Reel (TR) | 2015 | Obsolete | 3 (168 Hours) | ROHS3 Compliant | 56-TFSOP (0.724, 18.40mm Width) | Surface Mount | -40°C~125°C TA | FLASH - NOR | M29W128 | 128Mb 16M x 8 8M x 16 | Non-Volatile | 2.7V~3.6V | FLASH | Parallel | 70ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MT29F8G01ADAFD12-ITES:F | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 12 Weeks | Tray | Active | 3 (168 Hours) | ROHS3 Compliant | Surface Mount | -40°C~85°C TA | FLASH - NAND | 24-T-PBGA (6x8) | 8Gb 8G x 1 | Non-Volatile | 2.7V~3.6V | FLASH | SPI | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
S34MS01G204BHI013 | SkyHigh Memory Limited | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tape & Reel (TR) | Active | 3 (168 Hours) | 63 | 11mm | RoHS Compliant | 9mm | CMOS | ASYNCHRONOUS | 1mm | 1 | BOTTOM | BALL | 1.8V | INDUSTRIAL | YES | 0.8mm | R-PBGA-B63 | 1.7V | 85°C | -40°C | 1.95V | 64MX16 | 16 | 1073741824 bit | FLASH | PARALLEL | 1.8V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MT45W1MW16PAFA-85 WT | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Box | 2005 | Discontinued | 2 (1 Year) | 48 | 3A991.B.2.A | 8mm | Non-RoHS Compliant | 48-VFBGA | not_compliant | 6mm | Surface Mount | -30°C~85°C TC | PSRAM (Pseudo SRAM) | ASYNCHRONOUS | 1mm | 8542.32.00.41 | 1 | e0 | Tin/Lead (Sn/Pb) | BOTTOM | 235 | 1.8V | 30 | MT45W1MW16 | 48 | YES | 0.75mm | R-PBGA-B48 | 1.7V | Other Memory ICs | Not Qualified | 1.81.8/3V | 1.95V | 3-STATE | 16Mb 1M x 16 | Volatile | 0.017mA | 1.7V~1.95V | 1MX16 | 16 | 16777216 bit | 0.00008A | 85 ns | COMMON | 1.7V | PSRAM | Parallel | 85ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
MT29C1G12MAAJVAKC-5 IT | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tray | Obsolete | 3 (168 Hours) | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IS42S16160J-6BLI | ISSI, Integrated Silicon Solution Inc | 3.6110 |
Min: 1 Mult: 1 |
0.00000000 | 6 Weeks | Tray | Active | 3 (168 Hours) | 54 | 1 | 8mm | ROHS3 Compliant | PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESH | 54-TFBGA | 8mm | Surface Mount | -40°C~85°C TA | SDRAM | SYNCHRONOUS | 1.2mm | 1 | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | BOTTOM | NOT SPECIFIED | 3.3V | NOT SPECIFIED | YES | 0.8mm | S-PBGA-B54 | 3V | 3.6V | 5.4ns | 256Mb 16M x 16 | Volatile | 3V~3.6V | 16MX16 | 16 | 268435456 bit | 166MHz | DRAM | Parallel | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
AT24C08N-10SI-1.8 | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tube | Obsolete | 1 (Unlimited) | Non-RoHS Compliant | 8-SOIC (0.154, 3.90mm Width) | Surface Mount | -40°C~85°C TA | EEPROM | AT24C08 | 8-SOIC | 900ns | 8Kb 1K x 8 | Non-Volatile | 1.8V~5.5V | 400kHz | EEPROM | I2C | 5ms | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
W947D2HBJX6E TR | Winbond Electronics | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 10 Weeks | Tape & Reel (TR) | 2011 | Active | 3 (168 Hours) | ROHS3 Compliant | 90-TFBGA | Surface Mount | -25°C~85°C TC | SDRAM - Mobile LPDDR | 5ns | 128Mb 4M x 32 | Volatile | 1.7V~1.95V | 166MHz | DRAM | Parallel | 15ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
AT27C040-70JC | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tube | 1997 | Obsolete | 2 (1 Year) | Non-RoHS Compliant | 32-LCC (J-Lead) | Surface Mount | 0°C~70°C TC | EPROM - OTP | AT27C040 | 32-PLCC (13.97x11.43) | 70ns | 4Mb 512K x 8 | Non-Volatile | 4.5V~5.5V | EPROM | Parallel | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
MT61K512M32KPA-14:B | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tray | Active | 3 (168 Hours) | 180 | 1 | 14mm | ROHS3 Compliant | AUTO/SELF REFRESH; ALSO OPERATES AT 1.35 V | 180-TFBGA | 12mm | Surface Mount | 0°C~95°C TC | SGRAM - GDDR6 | SYNCHRONOUS | 1.2mm | 1 | BOTTOM | 1.25V | YES | 0.75mm | R-PBGA-B180 | 1.2125V | 1.2875V | 16Gb 512M x 32 | Volatile | 1.31V~1.391V | 512MX32 | 32 | 17179869184 bit | 7GHz | MULTI BANK PAGE BURST | DRAM | Parallel | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
71342SA25J8 | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Surface Mount | 2009 | no | Active | 3 (168 Hours) | 52 | EAR99 | 70°C | 0°C | 5V | 2 | 19mm | RoHS Compliant | Contains Lead | No | 52 | SEMAPHORE; AUTOMATIC POWER-DOWN | PLCC | Parallel | 5.5V | 4.5V | 32 kb | 19mm | 3.63mm | CMOS | 4.57mm | 1 | 280mA | e0 | Tin/Lead (Sn85Pb15) | QUAD | J BEND | 225 | 5V | 52 | COMMERCIAL | SRAMs | 5V | 3-STATE | 25 ns | 4kB | RAM, SDR, SRAM | 24b | 4KX8 | Asynchronous | 0.015A | 8b | COMMON |
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BR24C04-10TU-2.7 ROHM Semiconductor
Surface Mount 8 Pin Memory IC BR24C04 4 kb kb 4.3mm mm
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M29W640GB70ZA3E Micron Technology Inc.
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6116SA35TDB Integrated Device Technology (IDT)
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CY7C1514V18-200BZC Cypress Semiconductor Corp
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SST39VF6402B-70-4I-EKE Microchip Technology
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MT45W1MW16PAFA-85 WT Micron Technology Inc.
1.81.8/3V V 48 Pin Memory IC MT45W1MW16 8mm mm
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71342SA25J8 Integrated Device Technology (IDT)
5V V Surface Mount 52 Pin Memory IC 32 kb kb 19mm mm 280mA mA 8b b
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RFQ
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