Items : %s%s
Memory
Contact Plating
- Tin
ECCN Code
- 3A991.B.1.A
- EAR99
Factory Lead Time
- 11 Weeks
- 4 Weeks
- 5 Weeks
- 6 Weeks
- 7 Weeks
- 8 Weeks
JESD-609 Code
- e3
- e4
Manufacturer Package Identifier
- 24AA256-I/P
Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- 1 (Unlimited)
- 3 (168 Hours)
Mount
- Surface Mount
- Through Hole
Mounting Type
- Surface Mount
- Through Hole
Number of Pins
- 28
- 3
- 32
- 5
- 8
Number of Terminations
- 28
- 3
- 32
- 5
- 8
Operating Temperature
- -40°C~85°C TA
- 0°C~70°C TA
Package / Case
- 28-DIP (0.600, 15.24mm)
- 32-DIP (0.600, 15.24mm)
- 32-LCC (J-Lead)
- 32-TFSOP (0.488, 12.40mm Width)
- 8-DIP (0.300, 7.62mm)
- 8-SOIC (0.154, 3.90mm Width)
- 8-SOIC (0.209, 5.30mm Width)
- 8-TSSOP, 8-MSOP (0.118, 3.00mm Width)
- SC-74A, SOT-753
- TO-226-3, TO-92-3 (TO-226AA)
Packaging
- Bulk
- Tape & Reel (TR)
- Tray
- Tube
Part Status
- Active
- Obsolete
Pbfree Code
- yes
Published
- 1995
- 1997
- 2000
- 2002
- 2003
- 2004
- 2005
- 2007
- 2008
- 2009
- 2013
Series
- MoBL®
- SST39 MPF™
Surface Mount
- NO
- YES
Terminal Finish
- Matte Tin (Sn)
- Matte Tin (Sn) - annealed
- Nickel/Palladium/Gold (Ni/Pd/Au)
Termination
- SMD/SMT
- Through Hole
Weight
- 453.59237mg
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Datasheet | Factory Lead Time | Lifecycle Status | Mount | Packaging | Published | Series | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | ECCN Code | Max Operating Temperature | Min Operating Temperature | Operating Supply Voltage | Number of Ports | Length | RoHS Status | Lead Free | Contact Plating | Radiation Hardening | Number of Pins | Additional Feature | Package / Case | Interface | Max Supply Voltage | REACH SVHC | Reach Compliance Code | Min Supply Voltage | Density | Frequency | Height | Width | Thickness | Mounting Type | Operating Temperature | Technology | Operating Mode | Height Seated (Max) | HTS Code | Number of Functions | Nominal Supply Current | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Supply Voltage | Time@Peak Reflow Temperature-Max (s) | Base Part Number | Pin Count | Temperature Grade | Surface Mount | Terminal Pitch | JESD-30 Code | Supply Voltage-Min (Vsup) | Subcategory | Qualification Status | Power Supplies | Supply Voltage-Max (Vsup) | Halogen Free | Supplier Device Package | Output Characteristics | Access Time | Memory Size | Memory Type | Address Bus Width | Supply Current-Max | Voltage - Supply | Organization | Memory Width | Memory Density | Sync/Async | Data Bus Width | Parallel/Serial | Clock Frequency | Standby Current-Max | Access Time (Max) | Word Size | Data Retention Time-Min | Endurance | Write Protection | Write Cycle Time-Max (tWC) | I/O Type | Programming Voltage | Serial Bus Type | Refresh Cycles | Standby Voltage-Min | Memory Format | Memory Interface | Write Cycle Time - Word, Page | Sequential Burst Length | Interleaved Burst Length |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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SST25VF080B-50-4I-QAE-T | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Tape & Reel (TR) | 2010 | SST25 | yes | Active | 1 (Unlimited) | 8 | 3.3V | 6mm | ROHS3 Compliant | No | 8 | 8-WDFN Exposed Pad | SPI, Serial | 8 Mb | 5mm | Surface Mount | -40°C~85°C TA | CMOS | 1 | e3 | Matte Tin (Sn) - annealed | DUAL | 3V | SST25VF080B | 8 | YES | 1.27mm | 2.7V | 3.6V | 8Mb 1M x 8 | Non-Volatile | 2.7V~3.6V | 1 | 50MHz | 2.7V | FLASH | SPI | 10μs | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
7016L12JG8 | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Surface Mount | Tape & Reel | 2009 | yes | Active | 1 (Unlimited) | 68 | EAR99 | 70°C | 0°C | 5V | 2 | 24mm | RoHS Compliant | Lead Free | No | 68 | SEMAPHORE; INTERRUPT FLAG; AUTOMATIC POWER DOWN; LOW POWER STANDBY MODE | PLCC | Parallel | 5.5V | 4.5V | 144 kb | 24mm | 3.63mm | CMOS | 4.57mm | 1 | 275mA | e3 | Matte Tin (Sn) - annealed | QUAD | J BEND | 260 | 5V | 68 | COMMERCIAL | SRAMs | 5V | 3-STATE | 12 ns | RAM, SRAM | 14b | 16KX9 | Asynchronous | 0.005A | 9b | COMMON | |||||||||||||||||||||||||||||||||||||||||||||
.png "EDF8132A3MA-GD-F-R TR") |
EDF8132A3MA-GD-F-R TR | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tape & Reel (TR) | Obsolete | 3 (168 Hours) | ROHS3 Compliant | -30°C~85°C TC | SDRAM - Mobile LPDDR3 | 8Gb 256M x 32 | Volatile | 1.14V~1.95V | 800MHz | DRAM | Parallel | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
CY7C1020D-10ZSXI | Cypress Semiconductor Corp | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 6 Weeks | Surface Mount | Tray | 1996 | yes | Active | 3 (168 Hours) | 44 | 5V | 1 | 18.52mm | ROHS3 Compliant | Lead Free | No | 44 | 44-TSOP (0.400, 10.16mm Width) | 512 kb | 100MHz | 1.044mm | 10.262mm | Surface Mount | -40°C~85°C TA | SRAM - Asynchronous | 1 | 80mA | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | DUAL | 260 | 5V | 30 | CY7C1020 | 44 | 0.8mm | 5V | 3-STATE | 512Kb 32K x 16 | Volatile | 15b | 4.5V~5.5V | Asynchronous | 0.003A | 16b | COMMON | 2V | SRAM | Parallel | 10ns | |||||||||||||||||||||||||||||||||||||||||||||||
|
EMFM432A1PH-DV-F-R TR | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 12 Weeks | Tape & Reel (TR) | Active | 3 (168 Hours) | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MT29RZ4B2DZZHGSK-18 W.80E | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tray | Obsolete | 3 (168 Hours) | ROHS3 Compliant | 162-VFBGA | Surface Mount | -25°C~85°C TA | FLASH - NAND, DRAM - LPDDR2 | 4Gb 512M x 8 N 2G 64M x 32 LPDDR2 | Non-Volatile | 1.8V | 533MHz | FLASH, RAM | Parallel | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IDT71V3556S100BQI8 | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tape & Reel (TR) | 2007 | 3 (168 Hours) | 165 | 85°C | -40°C | Non-RoHS Compliant | 165 | Parallel | not_compliant | 100MHz | CMOS | SYNCHRONOUS | e0 | Tin/Lead (Sn63Pb37) | BOTTOM | BALL | 3.3V | INDUSTRIAL | YES | 1mm | SRAMs | Not Qualified | 3.3V | 3-STATE | RAM, SRAM | 0.255mA | 128KX36 | 36 | 4718592 bit | 0.045A | 5 ns | COMMON | 3.14V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MT53E256M16D1DS-046 AIT:B TR | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tape & Reel (TR) | Active | 3 (168 Hours) | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
EDFB164A1MA-JD-F-R TR | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tape & Reel (TR) | Obsolete | 3 (168 Hours) | ROHS3 Compliant | -30°C~85°C TA | SDRAM - Mobile LPDDR3 | 32Gb 512M x 64 | Volatile | 1.14V~1.95V | 933MHz | DRAM | Parallel | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IS29GL128S-10DHB02-TR | Cypress Semiconductor Corp | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tape & Reel (TR) | GL-S | Active | 3 (168 Hours) | ROHS3 Compliant | 64-LBGA | Surface Mount | -40°C~85°C TA | FLASH - NOR | 100ns | 128Mb 16M x 8 | Non-Volatile | 2.7V~3.6V | FLASH | Parallel | 60ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
S25FL116K0XWEN009 | Cypress Semiconductor Corp | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tray | FL1-K | Obsolete | 1 (Unlimited) | ROHS3 Compliant | 16-SOIC (0.295, 7.50mm Width) | Surface Mount | -40°C~125°C TA | FLASH - NOR | 16Mb 2M x 8 | Non-Volatile | 2.7V~3.6V | 108MHz | FLASH | SPI - Quad I/O | 3ms | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IS61NVP25636A-200TQLI-TR | ISSI, Integrated Silicon Solution Inc | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 12 Weeks | Tape & Reel (TR) | Active | 2 (1 Year) | 100 | ROHS3 Compliant | 100 | 100-LQFP | Surface Mount | -40°C~85°C TA | SRAM - Synchronous, SDR | QUAD | 2.5V | YES | 0.635mm | Not Qualified | 2.5V | 3-STATE | 3.1ns | 9Mb 256K x 36 | Volatile | 0.28mA | 2.375V~2.625V | 256KX36 | 36 | 9437184 bit | 200MHz | 0.05A | COMMON | 2.38V | SRAM | Parallel | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
CY7C1414KV18-250BZXCT | Cypress Semiconductor Corp | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 13 Weeks | Surface Mount | Tape & Reel (TR) | 2003 | Active | 3 (168 Hours) | 165 | 1.8V | 2 | 15mm | ROHS3 Compliant | No | 165 | PIPELINED ARCHITECTURE | 165-LBGA | 36 Mb | Surface Mount | 0°C~70°C TA | SRAM - Synchronous, QDR II | 1.4mm | 1 | 730mA | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | BOTTOM | 260 | 1.8V | 30 | CY7C1414 | 1mm | 1.7V | 1.9V | 3-STATE | 450 ps | 36Mb 1M x 36 | Volatile | 19b | 1.7V~1.9V | 1MX36 | 36 | Synchronous | 250MHz | 36b | SEPARATE | 1.7V | SRAM | Parallel | ||||||||||||||||||||||||||||||||||||||||||||||||
 |
CAT25256VI-G | ON Semiconductor | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 20 Weeks | Surface Mount | Tube | 2008 | yes | Active | 1 (Unlimited) | 8 | EAR99 | 5V | 4.9mm | ROHS3 Compliant | Lead Free | Gold | No | 8 | 100 YEAR DATA RETENTION | 8-SOIC (0.154, 3.90mm Width) | SPI, Serial | No SVHC | 256 kb | 3.9mm | Surface Mount | -40°C~85°C TA | CMOS | 1.75mm | 1 | 4mA | e4 | DUAL | 260 | 5V | 40 | CAT25256 | 8 | 1.27mm | Halogen Free | 75 ns | 256Kb 32K x 8 | Non-Volatile | 1.8V~5.5V | 8 | 20MHz | 0.000001A | 100 | 1000000 Write/Erase Cycles | HARDWARE/SOFTWARE | 5ms | SPI | EEPROM | SPI | 5ms | ||||||||||||||||||||||||||||||||||||||||||
 |
AS6C1008-55BINTR | Alliance Memory, Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 8 Weeks | Tape & Reel (TR) | 2006 | yes | Active | 3 (168 Hours) | ROHS3 Compliant | 36 | 36-TFBGA | unknown | Surface Mount | -40°C~85°C TA | SRAM - Asynchronous | NOT SPECIFIED | NOT SPECIFIED | 1Mb 128K x 8 | Volatile | 2.7V~5.5V | SRAM | Parallel | 55ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
M58WR032KB70ZB6Z | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 10 Weeks | Tray | 2011 | Active | 3 (168 Hours) | 85°C | -40°C | ROHS3 Compliant | 56 | 56-VFBGA | Parallel | Surface Mount | -40°C~85°C TA | FLASH - NOR | M58WR032 | 56-VFBGA (7.7x9) | 70ns | 32Mb 2M x 16 | Non-Volatile | 1.7V~2V | 66MHz | FLASH | Parallel | 70ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IDT71256SA12YI8 | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tape & Reel (TR) | 2009 | 28 | EAR99 | 85°C | -40°C | 17.9324mm | Non-RoHS Compliant | 28 | Parallel | 7.5184mm | CMOS | 3.556mm | 8542.32.00.41 | 1 | e0 | TIN LEAD | DUAL | J BEND | 225 | 5V | 30 | 28 | INDUSTRIAL | YES | 1.27mm | 4.5V | Not Qualified | 5.5V | RAM, SRAM - Asynchronous | 32KX8 | 8 | 262144 bit | 12 ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
AT25DN512C-MAHF-Y | Adesto Technologies | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tray | 2013 | Discontinued | 1 (Unlimited) | ROHS3 Compliant | 8-UFDFN Exposed Pad | Surface Mount | -40°C~85°C TC | FLASH | 8-UDFN (2x3) | 512Kb 64K x 8 | Non-Volatile | 2.3V~3.6V | 104MHz | FLASH | SPI | 8μs, 1.75ms | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
MT38M5041A3034EZZI.XR6 TR | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tape & Reel (TR) | Obsolete | 3 (168 Hours) | ROHS3 Compliant | 56-VFBGA | Surface Mount | -40°C~85°C TA | FLASH, PSRAM | 56-VFBGA | 512Mb 32M x 16 128M 8M x 16 | Non-Volatile | 1.7V~1.95V | 133MHz | FLASH, RAM | Parallel | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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70V07S55G | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Through Hole | 2009 | no | Active | 1 (Unlimited) | 68 | EAR99 | 70°C | 0°C | 3.3V | 2 | 29.46mm | RoHS Compliant | Contains Lead | No | 68 | INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN | Parallel | 3.6V | 3V | 256 kb | 29.46mm | 3.68mm | CMOS | 1 | 140mA | e0 | Tin/Lead (Sn/Pb) | PERPENDICULAR | PIN/PEG | 240 | 3.3V | 68 | COMMERCIAL | SRAMs | 3-STATE | 55 ns | RAM, SRAM | 30b | Asynchronous | 0.006A | 8b | COMMON | 3V | |||||||||||||||||||||||||||||||||||||||||||||||||
 |
IDT71V3557SA85BQ8 | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tape & Reel (TR) | 2009 | 70°C | 0°C | Non-RoHS Compliant | 165 | Parallel | RAM, SRAM | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
AS4C32M16D2-25BCNTR | Alliance Memory, Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tape & Reel (TR) | 2013 | Obsolete | 3 (168 Hours) | 84 | 1.8V | RoHS Compliant | Lead Free | No | 84 | 84-TFBGA | 512 Mb | Surface Mount | 0°C~85°C TC | SDRAM - DDR2 | BOTTOM | 1.8V | YES | 0.8mm | 3-STATE | 400ps | 512Mb 32M x 16 | Volatile | 13b | 0.2mA | 1.7V~1.9V | 32MX16 | 16 | 16b | 400MHz | 0.008A | COMMON | 8192 | DRAM | Parallel | 15ns | 48 | 48 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
AT49BV002AN-70VI | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tray | 1997 | Obsolete | 3 (168 Hours) | Non-RoHS Compliant | 32-TFSOP (0.488, 12.40mm Width) | Surface Mount | -40°C~85°C TC | AT49BV002 | 70ns | 2Mb 256K x 8 | Non-Volatile | 2.7V~3.6V | FLASH | Parallel | 50μs | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
GD25LD80CSIGR | GigaDevice Semiconductor (HK) Limited | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 4 Weeks | Tape & Reel (TR) | Active | 3 (168 Hours) | ROHS3 Compliant | 8-SOIC (0.209, 5.30mm Width) | Surface Mount | -40°C~85°C TA | FLASH - NOR | 8Mb 1M x 8 | Non-Volatile | 1.65V~2V | 50MHz | FLASH | SPI - Dual I/O | 60μs, 6ms | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MT29F8G08ABACAWP-AIT:C TR | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 8 Weeks | Tape & Reel (TR) | Active | 3 (168 Hours) | ROHS3 Compliant | 48-TFSOP (0.724, 18.40mm Width) | Surface Mount | -40°C~85°C TA | FLASH - NAND (SLC) | 8Gb 1G x 8 | Non-Volatile | 2.7V~3.6V | 3.3V | FLASH | Parallel | 20ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
BR93G56FJ-3AGTE2 | ROHM Semiconductor | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 10 Weeks | Cut Tape (CT) | Active | 1 (Unlimited) | 8 | 4.9mm | ROHS3 Compliant | SEATED HT-CALCULATED, ALSO AVAILABLE 2.5-4.5V OPERATES WITH 2MHZ, 1.7-2.5V OPERATES WITH 1MHZ | 8-SOIC (0.154, 3.90mm Width) | 3.9mm | Surface Mount | -40°C~85°C TA | CMOS | SYNCHRONOUS | 1.65mm | 1 | DUAL | NOT SPECIFIED | 5V | NOT SPECIFIED | YES | 1.27mm | R-PDSO-G8 | 4.5V | 5.5V | 2Kb 128 x 16 | Non-Volatile | 1.7V~5.5V | 128X16 | 16 | 2048 bit | SERIAL | 3MHz | 5ms | 3-WIRE | EEPROM | SPI | 5ms | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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SM671PXD-AD | Silicon Motion, Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tray | Active | 3 (168 Hours) | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
EM68A16CBQC-25H | Etron Technology, Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 4 Weeks | Tape & Reel (TR) | Active | 3 (168 Hours) | 84-TFBGA | Surface Mount | 0°C~85°C TC | SDRAM - DDR2 | 400ps | 256Mb 16M x 16 | Volatile | 1.7V~1.9V | 400MHz | DRAM | Parallel | 15ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
NV25320DTHFT3G | ON Semiconductor | 0.7700 |
Min: 1 Mult: 1 |
0.00000000 | download | 4 Weeks | ACTIVE (Last Updated: 3 weeks ago) | Tape & Reel (TR) | 2008 | Automotive, AEC-Q100 | yes | Active | 1 (Unlimited) | 8 | 4.4mm | RoHS Compliant | 8-TSSOP (0.173, 4.40mm Width) | 3mm | Surface Mount | -40°C~150°C TA | CMOS | SYNCHRONOUS | 1.2mm | 1 | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | DUAL | NOT SPECIFIED | 5V | NOT SPECIFIED | YES | 0.65mm | R-PDSO-G8 | 2.5V | 5.5V | 40ns | 32Kb 4K x 8 | Non-Volatile | 2.5V~5.5V | 4KX8 | 8 | 32768 bit | SERIAL | 10MHz | 4ms | SPI | EEPROM | SPI | 4ms | ||||||||||||||||||||||||||||||||||||||||||||||||||
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EM68B16CWQK-25IH | Etron Technology, Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 4 Weeks | Tape & Reel (TR) | Active | 3 (168 Hours) | 84-TFBGA | Surface Mount | -40°C~95°C TC | SDRAM - DDR2 | 400ps | 512M 32M x 16 | Volatile | 1.7V~1.9V | 400MHz | DRAM | Parallel | 15ns |
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SST25VF080B-50-4I-QAE-T Microchip Technology
SST25 8 Pin Memory IC SST25 Series SST25VF080B 8 Mb kb 6mm mm
Price: 0.0000
RFQ -
7016L12JG8 Integrated Device Technology (IDT)
5V V Surface Mount 68 Pin Memory IC 144 kb kb 24mm mm 275mA mA 9b b
Price: 0.0000
RFQ -
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CY7C1020D-10ZSXI Cypress Semiconductor Corp
5V V Surface Mount 44 Pin Memory IC CY7C1020 512 kb kb 18.52mm mm 80mA mA 16b b
Price: 0.0000
RFQ -
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CY7C1414KV18-250BZXCT Cypress Semiconductor Corp
Surface Mount Memory IC CY7C1414 36 Mb kb 15mm mm 730mA mA 36b b
Price: 0.0000
RFQ -
CAT25256VI-G ON Semiconductor
Surface Mount 8 Pin Memory IC CAT25256 256 kb kb 4.9mm mm 4mA mA
Price: 0.0000
RFQ -
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70V07S55G Integrated Device Technology (IDT)
Through Hole 68 Pin Memory IC 256 kb kb 29.46mm mm 140mA mA 8b b
Price: 0.0000
RFQ -
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NV25320DTHFT3G ON Semiconductor
Automotive, AEC-Q100 Memory IC Automotive, AEC-Q100 Series 4.4mm mm
Price: 0.7700
RFQ -
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